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ISL6625ACRZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; DFN8; Temp Range: See Datasheet visit Intersil Buy
HIP6601BCBZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HIP6603BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ISL6596IBZ Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6608CBZ Intersil Corporation Synchronous Rectified MOSFET Driver; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ISL6609AIRZ Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

parallel mosfet

Catalog Datasheet MFG & Type PDF Document Tags

AN1750

Abstract: 24v active clamp forward converter method for PWM dimming by connecting to the gate of MOSFET Q1. Q1 provides a parallel path for the LED current. Shunting the output current through a parallel MOSFET reduces the PWM dimming delays because the , output capacitor is that it causes significant delays when using parallel MOSFET dimming. The output capacitor should be removed to take full advantage of parallel MOSFET dimming. The logic of DIM2 is active , higher LED currents are set when the program jumper puts resistors R.7, R1 or R1.5 in parallel with R
National Semiconductor
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single phase inverter mosfet

Abstract: half bridge inverter schematic Inverter Single Phase Inverter with Parallel MOSFET's High Frequency Half Bridge Converter Brush DC , circuit board layout phase of the design. Circuit Example 3: Single Phase Inverter with Parallel MOSFET , for bridges that might parallel 10 or 12 transistors per switch group. It also works effectively with
E-T-A
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GRM188R71C104K01D

Abstract: parallel mosfet dimming by connecting to the gate of MOSFET Q1 through the driver U5. Q1 provides a parallel path for the LED current. Shunting the output current through a parallel MOSFET reduces the PWM dimming delays , significant delays when using parallel MOSFET dimming. The output capacitor should be removed to take full advantage of parallel MOSFET dimming. The logic of DIM2 is active low, hence the regulated output current , jumper puts resistors R4, R5 or R7 in parallel with R6. For users that wish to program a current other
National Semiconductor
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Parallel operation mosfet

Abstract: LH1500 VISHAY Vishay Semiconductors Solid State Relay Parallel and DC Operation (Appnote 61) Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Vishay SSRs supply ample gate bias to the MOSFET switches to ensure positive temperature coefficient RDSon operation even with LED input currents as low as 2 mA. Therefore, with parallel MOSFET operation, if one MOSFET switch draws more than average current, its resistance will increase
Vishay Semiconductors
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Appnote61

Abstract: mosfet switches Solid State Relay Parallel and DC Operation Appnote 61 Description Siemens Solid State Relay (SSR) outputs can be wired in parallel enabling the user to benefit from lower ON-resistance and , so that internal MOSFET switches can be paralleled for dc only switching applications. Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Siemens SSRs supply ample gate bias to the MOSFET switches to ensure positive
Siemens
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LH1500

Abstract: Parallel operation mosfet . Therefore, with parallel MOSFET operation, if one MOSFET switch draws more than average current, its , Appnote 61 VISHAY Vishay Semiconductors Solid State Relay Parallel and DC Operation Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Vishay SSRs supply ample gate bias to the MOSFET switches to , paralleled SSRs; and Rt is the parallel combination of all RONs for a given operating temperature.· Note
Vishay Semiconductors
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Application Note 61

Abstract: Parallel operation mosfet Solid State Relay Parallel and DC Operation DESCRIPTION Vishay solid state relay (SSR) outputs can be wired in parallel enabling the user to benefit from lower on-resistance and higher load currents for AC , redundancy. Also, many of Vishay SPST SSRs provide a center tap so that internal MOSFET switches can be , two SSRs in two different packages with identical RON electrical specifications are placed in parallel , proximity of one MOSFET switch to another. The single-die construction also provides excellent thermal
Vishay Semiconductors
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LH1500

Abstract: Solid State Relay Parallel and DC Operation Appnote 61 Description Vishay Solid State Relay (SSR) outputs can be wired in parallel enabling the user to benefit from lower ON-resistance and , that internal MOSFET switches can be paralleled for dc only switching applications. Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Vishay SSRs supply ample gate bias to the MOSFET switches to ensure positive
Vishay Intertechnology
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ac ssr

Abstract: LH1500 Solid State Relay Parallel and DC Operation Appnote 61 Description Infineon Solid State Relay (SSR) outputs can be wired in parallel enabling the user to benefit from lower ON-resistance and , so that internal MOSFET switches can be paralleled for dc only switching applications. Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Infineon SSRs supply ample gate bias to the MOSFET switches to ensure positive
Infineon Technologies
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LH1500

Abstract: ac ssr VISHAY Vishay Semiconductors Solid State Relay Parallel and DC Operation (Appnote 61) Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Vishay SSRs supply ample gate bias to the MOSFET switches to ensure positive temperature coefficient RDSon operation even with LED input currents as low as 2 mA. Therefore, with parallel MOSFET operation, if one MOSFET switch draws more than average current, its resistance will increase
Vishay Semiconductors
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Abstract: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal C OLMOS O Super Junction MOSFET Power Semiconductors T-MaxTM â'¢ Ultra Low RDS(ON) â'¢ Low Miller Capacitance â'¢ Ultra Low Gate Charge, Qg â'¢ Avalanche Energy Rated D â'¢ Extreme dv/dt Rated G â'¢ Dual die (parallel) â'¢ Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is Microsemi
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APT94N65B2C3S MIL-STD-750

APT10043JVR

Abstract: stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation
Microsemi
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APT10043JVR E145592

APT8028JVR

Abstract: stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation
Microsemi
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APT8028JVR
Abstract: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET â'¢ Ultra Low R DS(ON) TO-264 â'¢ Low Miller Capacitance â'¢ Ultra Low Gate Charge, Q g â'¢ Avalanche Energy Rated â'¢ Extremedv/dt Rated D â'¢ Dual die (parallel) G â'¢ Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode Microsemi
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75DQ60 APT30DF60

transistors mj 1504

Abstract: mj 1504 APT77N60JC3 600V 77A Super Junction MOSFET · Ultra Low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated · Extreme dv/dt Rated · Dual die (parallel) IS OTO P ® 0.035 S D S G S OT 22 7 "UL Recognized" file # E145592 D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. S
Microsemi
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transistors mj 1504 mj 1504 diode 77a ce 77a

diode 748 36A

Abstract: APT36N90BC3G 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C OLMOS O Super Junction MOSFET Power Semiconductors TO -24 7 D3 · Ultra Low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated D · Extreme dv/dt Rated G · Dual die (parallel) · Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for
Microsemi
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diode 748 36A

APT94N60L2C3G

Abstract: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET · Ultra Low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated · Extreme dv/dt Rated · Dual die (parallel) · Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. TO-264 D G
Microsemi
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mosfet 600V 60A

Abstract: 900V 60A APT60N90JC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET G S D S · Ultra Low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated · Extreme dv/dt Rated · Dual die (parallel) · Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable
Microsemi
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mosfet 600V 60A
Abstract: APT31N80JC3 800V 31A 0.145â"¦ Super Junction MOSFET S S D G C OLMOS O SO Power Semiconductors â'¢ Ultra low RDS(ON) â'¢ Low Miller Capacitance â'¢ Ultra Low Gate Charge, Qg â'¢ Avalanche Energy Rated â'¢ Popular SOT-227 Package 27 -2 T â'¢ N-Channel Enhancement Mode "UL Recognized" ISOTOP ® D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for Microsemi
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APT15DF100

APT77N60JC3

Abstract: APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D G SO Power Semiconductors · Ultra low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated · Popular SOT-227 Package · N-Channel Enhancement Mode "UL Recongnized" file # 145592 ISOTOP fi D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is
Microsemi
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