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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
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LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

p600 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: P600 Diode variation Case: P600ï'  Molding compound meets UL 94 V-0 flammability rating Base P , forward surge capability â'¢ ESD capability P600 â'¢ Solder dip 275 °C max. 10 s, per JESD 22 , IF(AV) For use in solar cell junction box as a bypass diode for protection, using DC forward , air (3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 22 , (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32 Vishay Intertechnology
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Abstract: forward current) 200 °C Package P600 Diode variation Single die Terminals: Matte tin , definitions of compliance please see www.vishay.com/doc?99912 P600 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias , 15 A 0.46 V TOP max. 175 °C Case: P600, molded epoxy over passivated junction Molding , bypass diode thermal test Revision: 02-Aug-13 Document Number: 89061 1 For technical questions Vishay General Semiconductor
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Abstract: VF at IF = 10 A 1.05 V IR 175 °C Package P600 Diode variations Case: P600 , °C max. 10 s, per JESD 22-B106 P600 â'¢ AEC-Q101 qualified â'¢ Material categorization: For , (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32 Vishay Intertechnology
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GPP100D GPP100G GPP100J GPP100K GPP100M MIL-S-19500

V2045Y

Abstract: TJ max. (DC forward current) 230 °C Package P600 Diode variation Single die TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC , forward surge capability â'¢ ESD capability P600 â'¢ High junction temperature 230 °C maximum at , www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) P600 1.0
Vishay General Semiconductor
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V2045Y VSB2045Y-M3 J-STD-002 22-B102 VSB2045Y 2011/65/EU
Abstract: . 175 °C Package P600 Diode variations Single die MECHANICAL DATA Case: P600, molded , surge capability â'¢ Solder dip 275 °C max. 10 s, per JESD 22-B106 P600 â'¢ AEC-Q101 qualified , Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1 Vishay Semiconductors
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GPP60A GPP60B GPP60D GPP60G GPP60J GPP60K
Abstract: P600 Diode variations Single die Terminals: Matte tin plated leads, solderable per J-STD , '¢ Solder dip 275 °C max. 10 s, per JESD 22-B106 P600 â'¢ AEC-Q101 qualified â'¢ Material , IFSM 500 A MECHANICAL DATA VF 1.1 V IR 5.0 μA TJ max. 175 °C Case: P600 , OUTLINE DIMENSIONS in inches (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1 Vishay General Semiconductor
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2002/95/EC JS709A
Abstract: RoHS-compliant, commercial grade P600 Diode variations Note â'¢ These devices are not AEC-Q101 , 275 °C max. 10 s, per JESD 22-B106 P600 â'¢ Material categorization: For definitions of , μA VF 0.9 V, 0.95 V TJ max. 150 °C Package MECHANICAL DATA Case: P600, void-free , (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32 Vishay General Semiconductor
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GI750 GI751 GI752 GI754 GI756 GI758
Abstract: ) 150 °C TJ max. (DC forward current) 200 °C Package P600 Diode variation For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias , forward surge capability â'¢ ESD capability P600 â'¢ Solder dip 275 °C max. 10 s, per JESD 22 , ) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 23-Oct-13 Document , (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32 Vishay General Semiconductor
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VSB20L45 V20L45
Abstract: °C Package P600 Diode variations Case: P600, molded epoxy over passivated junctionï , -B106 P600 â'¢ AEC-Q101 qualified â'¢ Material categorization: For definitions of compliance please see , (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32 Vishay Intertechnology
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GI826-E3/54

Abstract: P600 Diode variation MECHANICAL DATA Single die Terminals: Matte tin plated leads , '¢ Solder dip 275 °C max. 10 s, per JESD 22-B106 P600 â'¢ Material categorization: For definitions of , are not AEC-Q101 qualified. 150 °C Package Case: P600, void-free molded epoxy bodyï , inches (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6
Vishay Semiconductors
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GI826-E3/54 GI820 GI821 GI822 GI824 GI826 GI828
Abstract: P600 Diode variation Case: P600ï'  Molding compound meets UL 94 V-0 flammability rating Base P , forward surge capability â'¢ ESD capability P600 â'¢ Solder dip 275 °C max. 10 s, per JESD 22 , IF(AV) For use in solar cell junction box as a bypass diode for protection, using DC forward , the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 22-Nov-13 Document Number , www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) P600 1.0 Vishay General Semiconductor
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VSB1545-M3 VSB1545 V1545
Abstract: P600 Diode variation Single die Note â'¢ These devices are not AEC-Q101 qualified , capability P600 â'¢ Solder dip 275 °C max. 10 s, per JESD 22-B106 â'¢ Material categorization: For , IR 10 μA TJ max. 125 °C Case: P600, void-free molded epoxy bodyï'  Molding compound , OUTLINE DIMENSIONS in inches (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1 Vishay Semiconductors
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SRP600A SRP600B SRP600D SRP600G SRP600J SRP600K

diode P600D

Abstract: P600D Package P600 Diode variations Single die Terminals: Matte tin plated leads, solderable J-STD , , per JESD 22-B106 P600 â'¢ Material categorization: For definitions of compliance please see , VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM Case: P600, void-free molded epoxy , (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32
Vishay General Semiconductor
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P600D diode P600D P600A P600B P600G P600J P600K
Abstract: meets JESD 201 class 1A whisker test P600 Diode variations MECHANICAL DATA Single die per , GPP100MS-E3 www.vishay.com Vishay General Semiconductor Photovoltaic Solar Panel Protection Plastic Rectifier FEATURES â'¢ Glass passivated chip junction â'¢ Low forward voltage drop â'¢ High forward surge capability â'¢ Solder dip 275 °C max. 10 s, per JESD 22-B106 P600 â'¢ Material , Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1 Vishay Intertechnology
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GPP100MS
Abstract: JESD 22-B102ï'  E3 suffix meets JESD 201 class 1A whisker test P600 Diode variations , -B106 P600 â'¢ Material categorization: For definitions of compliance please see www.vishay.com/doc , DIMENSIONS in inches (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 Vishay Semiconductors
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Abstract: P600 Diode variation Case: P600ï'  Molding compound meets UL 94 V-0 flammability rating Base P , forward surge capability â'¢ ESD capability P600 â'¢ Solder dip 275 °C max. 10 s, per JESD 22 , IF(AV) For use in solar cell junction box as a bypass diode for protection, using DC forward , air (3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 22 , (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32 Vishay Dale
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VSB2045-M3 VSB2045 V2045

p600 diode

Abstract: diode p600 MR750 â'" MR7510 WTE POWER SEMICONDUCTORS Pb 6.0A STANDARD DIODE Features #21; Diffused , Current Capability A B A Mechanical Data #21; #21; #21; #21; #21; #21; #21; C Case: P-600, Molded , Version, Add â'-LFâ' Suffix to Part Number, See Page 4 D P-600 Dim Min Max 25.4 â'" A 8.60 , Electronics ORDERING INFORMATION Product No. Package Type Shipping Quantity MR750-T3 P-600 800/Tape & Reel MR750 P-600 250 Units/Box MR751-T3 P-600 800/Tape & Reel MR751
Won-Top Electronics
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p600 diode diode p600 p600 MIL-STD-202 MR752 MR754 MR756 MR758 MR756-T3

diode p600

Abstract: p600 10A05 â'" 10A10 WTE POWER SEMICONDUCTORS Pb 10A STANDARD DIODE Features #21; Diffused , Current Capability A B A Mechanical Data #21; #21; #21; #21; #21; #21; #21; C Case: P-600, Molded , Version, Add â'-LFâ' Suffix to Part Number, See Page 4 D P-600 Dim Min Max 25.4 â'" A 8.60 , Electronics ORDERING INFORMATION Product No. Package Type Shipping Quantity 10A05-T3 P-600 800/Tape & Reel 10A05 P-600 250 Units/Box 10A1-T3 P-600 800/Tape & Reel 10A1 P-600
Won-Top Electronics
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10A6-T3 800/T 10A8-T3 10A10-T3 10A05-T3-LF

P600A

Abstract: ® P600A â'" P600S 6.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused , Case: P-600, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity , RoHS / Lead Free Version, Add â'-LFâ' Suffix to Part Number, See Page 4 D Dim P-600 Min A , %. Symbol RMS Reverse Voltage Average Rectified Output Current (Note 1) P600 D P600 G P600 J P600 K P600 M P600 S Unit 50 100 200 400 600 800 1000 1200 V
Won-Top Electronics
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P600A-T3-LF

P600 diode

Abstract: diode p600 MR750 ­ MR7510 WTE POWER SEMICONDUCTORS Pb 6.0A STANDARD DIODE Features ! Diffused , Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: P-600, Molded , Version, Add "-LF" Suffix to Part Number, See Page 4 D P-600 Dim Min Max 25.4 - A 8.60 9.10 , Type Shipping Quantity MR750-T3 P-600 800/Tape & Reel MR750 P-600 250 Units/Box MR751-T3 P-600 800/Tape & Reel MR751 P-600 250 Units/Box MR752-T3 P-600 800/Tape &
Won-Top Electronics
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MR75x Diode MR750 MR752 equivalent MR756 equivalent RS-296-E MR758-T3 MR7510-T3 MR750-T3-LF
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