500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL28210FBZ-T7A Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28110FBZ-T13 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28210FBZ Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28210FBZ-T7 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28210FBZ-T13 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28110FBZ Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy

p jfet

Catalog Datasheet MFG & Type PDF Document Tags

JFET

Abstract: 2N4303 "cross reference" Replacement Data Sheet Page Geometry Page 2N3909 P JFET 2N2IÌ08 2N4340 N JFET 2N4340 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 2N3921 D N JFET 2N3921 2N4352 P MOS ENH 3N163 2N3922 D N JFET 2N3922 2N4381 P JFET 2N2609 2N3954 D N JFET 2N3954 2N4382 P JFET 2N5115 2N3954A D N JFET 2N3954A 2N4391 N , JFET 2N4857A 2N3993 P JFET 2N3386 to 2N4857JAN N JFET 2N4857JAN 2N3993A P JFET 2N3386 0) 2N4857JANTX N JFET 2N4857JANTX 2N3994 P JFET 2N3382 Q 2N4857JANTXV N JFET 2N4857JANTXV 2N3994A P JFET 2N3382 H
-
OCR Scan
2N3970 2N4302 2N4303 2N4304 JFET 2N4303 "cross reference" 2n4393 replacement 2n4416 jfet J-FET 2N3955 2N4392 2N3955A 2N4393 2N3956 2N4416

2N4303

Abstract: jfet Data Sheet Page Geometry Page 2N3909 P JFET 2N2IÌ08 2N4340 N JFET 2N4340 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 2N3921 D N JFET 2N3921 2N4352 P MOS ENH 3N163 2N3922 D N JFET 2N3922 2N4381 P JFET 2N2609 2N3954 D N JFET 2N3954 2N4382 P JFET 2N5115 2N3954A D N JFET 2N3954A 2N4391 N JFET , 2N3993 P JFET 2N3386 to 2N4857JAN N JFET 2N4857JAN 2N3993A P JFET 2N3386 0) 2N4857JANTX N JFET 2N4857JANTX 2N3994 P JFET 2N3382 Q 2N4857JANTXV N JFET 2N4857JANTXV 2N3994A P JFET 2N3382 H 111 LL 2N4858 N
-
OCR Scan
2N4119 Siliconix JFET Dual to92 jfet p channel n channel 2n4393 dual P-Channel JFET 2n4267 DPAD10 DPAD20 DPAD50 DPAD100 JPAD10 JPAD20

j201 jfet

Abstract: 2N4303 Type and Classification Recommended Replacement Data Sheet Page Geometry Page 2N3909 P JFET 2N2IÌ08 2N4340 N JFET 2N4340 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 2N3921 D N JFET 2N3921 2N4352 P MOS ENH 3N163 2N3922 D N JFET 2N3922 2N4381 P JFET 2N2609 2N3954 D N JFET 2N3954 2N4382 P JFET , 2N3972 N JFET 2N3972 c 2N4857A N JFET 2N4857A 2N3993 P JFET 2N3386 to 2N4857JAN N JFET 2N4857JAN 2N3993A P JFET 2N3386 0) 2N4857JANTX N JFET 2N4857JANTX 2N3994 P JFET 2N3382 Q 2N4857JANTXV N JFET
-
OCR Scan
j201 jfet J201 Replacement fet cross reference FET J202 2N3966 J201 cross reference 2N3821 2N3822 2N4220 2N4221 2N4222 2N5457

2N4303

Abstract: sd215 siliconix Geometry Page 2N3909 P JFET 2N2IÌ08 2N4340 N JFET 2N4340 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 2N3921 D N JFET 2N3921 2N4352 P MOS ENH 3N163 2N3922 D N JFET 2N3922 2N4381 P JFET 2N2609 2N3954 D N JFET 2N3954 2N4382 P JFET 2N5115 2N3954A D N JFET 2N3954A 2N4391 N JFET 2N4391 2N3955 D N JFET , JFET 2N3971 15 o 2N4857 N JFET 2N4857 2N3972 N JFET 2N3972 c 2N4857A N JFET 2N4857A 2N3993 P JFET 2N3386 to 2N4857JAN N JFET 2N4857JAN 2N3993A P JFET 2N3386 0) 2N4857JANTX N JFET 2N4857JANTX 2N3994 P
-
OCR Scan
2N4092 sd215 siliconix u1898 cross JFET 2N3369 JFET 2N3330 2n4120 P1087 P1087-18 SD210 SD211 S0212 SD213

J-FET

Abstract: 2n4267 Replacement Data Sheet Page Geometry Page 2N3909 P JFET 2N2IÌ08 2N4340 N JFET 2N4340 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 2N3921 D N JFET 2N3921 2N4352 P MOS ENH 3N163 2N3922 D N JFET 2N3922 2N4381 P JFET 2N2609 2N3954 D N JFET 2N3954 2N4382 P JFET 2N5115 2N3954A D N JFET 2N3954A 2N4391 N , JFET 2N4857A 2N3993 P JFET 2N3386 to 2N4857JAN N JFET 2N4857JAN 2N3993A P JFET 2N3386 0) 2N4857JANTX N JFET 2N4857JANTX 2N3994 P JFET 2N3382 Q 2N4857JANTXV N JFET 2N4857JANTXV 2N3994A P JFET 2N3382 H
-
OCR Scan
2N5432 2N4858A 2n4117 jfet 2N5638 cross reference fet 2N4304 jfet to 92 2N3957 2N4416A 2N3958 2N4445 2N4446

fet cross reference

Abstract: 2N4302 Replacement Data Sheet Page Geometry Page 2N3909 P JFET 2N2IÌ08 2N4340 N JFET 2N4340 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 2N3921 D N JFET 2N3921 2N4352 P MOS ENH 3N163 2N3922 D N JFET 2N3922 2N4381 P JFET 2N2609 2N3954 D N JFET 2N3954 2N4382 P JFET 2N5115 2N3954A D N JFET 2N3954A 2N4391 N , JFET 2N4857A 2N3993 P JFET 2N3386 to 2N4857JAN N JFET 2N4857JAN 2N3993A P JFET 2N3386 0) 2N4857JANTX N JFET 2N4857JANTX 2N3994 P JFET 2N3382 Q 2N4857JANTXV N JFET 2N4857JANTXV 2N3994A P JFET 2N3382 H
-
OCR Scan
2N3B19 JFET 2N5457 2N6568 2N6658 Siliconix JFET FET 2N4416 2N5433 2N3967 2N4447 2N3967A 2N4448 2N3968

J201 Replacement

Abstract: fet cross reference Type and Classification Recommended Replacement Data Sheet Page Geometry Page 2N3909 P JFET 2N2IÌ08 2N4340 N JFET 2N4340 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 2N3921 D N JFET 2N3921 2N4352 P MOS ENH 3N163 2N3922 D N JFET 2N3922 2N4381 P JFET 2N2609 2N3954 D N JFET 2N3954 2N4382 P JFET , 2N3972 N JFET 2N3972 c 2N4857A N JFET 2N4857A 2N3993 P JFET 2N3386 to 2N4857JAN N JFET 2N4857JAN 2N3993A P JFET 2N3386 0) 2N4857JANTX N JFET 2N4857JANTX 2N3994 P JFET 2N3382 Q 2N4857JANTXV N JFET
-
OCR Scan
2N5458 CROSS REFERENCE 2n6661 J204 Replacement 2N5459 J201-18 J202-18 J203-18 J204-18

fet cross reference

Abstract: 2N4302 Replacement Data Sheet Page Geometry Page 2N3909 P JFET 2N2IÌ08 2N4340 N JFET 2N4340 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 2N3921 D N JFET 2N3921 2N4352 P MOS ENH 3N163 2N3922 D N JFET 2N3922 2N4381 P JFET 2N2609 2N3954 D N JFET 2N3954 2N4382 P JFET 2N5115 2N3954A D N JFET 2N3954A 2N4391 N , JFET 2N4857A 2N3993 P JFET 2N3386 to 2N4857JAN N JFET 2N4857JAN 2N3993A P JFET 2N3386 0) 2N4857JANTX N JFET 2N4857JANTX 2N3994 P JFET 2N3382 Q 2N4857JANTXV N JFET 2N4857JANTXV 2N3994A P JFET 2N3382 H
-
OCR Scan
P-Channel JFET 2N3823 fet 2N4139 3N155A N channel jfet 2N4092 GEOMETRY 2N4339 2N4856 2N3968A 2N4856A 2N3969 2N4856JAN

siliconix fet

Abstract: Transistor E112 FET N-Channel 5-12 2N3113 P JFET 2N2843 1N5293 CL N JFET CR068 3-45 5-13 2N3277 P JFET 2N2608 1N5294 CL N JFET CR075 3-45 5-13 2N3278 P JFET 2N2608 1N5295 CL.N JFET CR082 3-45 5-13 2N3328 P JFET 2N3438 1N5296 CL N JFET CR091 3-45 5-13 2N3329 P JFET 2N3329 3-3 5-36 1N5297 CL N JFET CR100 3-45 5-13 2N3330 P JFET 2N3330 3-3 5-36 1N5298 CL N JFET CR110 3-45 5-13 2N3331 P JFET 2N3331 3-3 5-36 1N5299 CL N JFET CR120 3-45 5-13 2N3332 P JFET 2N3332 3-3 5-36 1NS300 CL N JFET CR130 3-45 5-13 2N3365 N JFET 2N4340 1N5301
-
OCR Scan
siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet bfw10 terminals JFET BFW10 SPECIFICATIONS E112 jfet 867-C 1130669-CSEL-BR J-23548 K24123 NZ3766 53-C-03

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 2N3608 N JFET N JFET N JFET N JFET P MOS EN H 1N5288 1N5289 1N5290 1N5291 1N5292 CL N , JFET CL N JFET CR068 CR075 CR082 CR091 CR100 2N3820 2N3821 2N3822 2N3823 2N3824 P , JFET N JFET N JFET N JFET N JFET N JFET P MDS E H N N JFET N JFET N JFET 2N4117 2N4117A , 2N4340 2N4338 2N4338 2N4340 2N4338 2N4224 2N4267 2N4302 2N4303 2N4304 N JFET P MOS ENH N , 2N4339 2N4340 2N4341 2N4352 NJFET N JFET N JFET N JFET P MOS ENH 2N4338 2N4339 2N4340
-
OCR Scan
e304 fet e420 dual jfet BFW10 JFET jfet e300 JFET TIS88 2N5258 equivalent K28742 44449SILXHX

HIGH VOLTAGE 3.3kv mosfet

Abstract: STR D 6601 Methods to identify the most influential factors. (A), (B) (E) (C) Design parameters (A) : P- channel dope pattern width P+ J-FET region CD NW (B) : P- channel dope concentration J-FET region MOSFET cell (C) : n+ JFET implant concentration (D) : P-collector concentration (E) : P , + JFET implant concentration standard ×1.5 standard ×2.0 standard D P- collector , 80 40 1400 Eoff [mJ/P] 2600 20 SCSOA 1000 2 2.5 3 3.5 VCE(sat) 0
Mitsubishi
Original
HIGH VOLTAGE 3.3kv mosfet STR D 6601 mitsubishi electric igbt module HIGH VOLTAGE DIODE 3.3kv igbt 3.3kv HVIGBT from Mitsubishi electric

difference between IGBT and MOSFET IN inverter

Abstract: IGBT SCHEMATIC specifically for IGBTs. In a MOSFET the substrate is N+ as shown in Figure 3b. The substrate for an IGBT is P+ as shown in Figure 3a. GATE GATE EMITTER KEY METAL SiO2 POLYSILICON GATE N+ P+ P- P- NPN Rshorting SOURCE POLYSILICON GATE N+ N+ P+ MOSFET P- JFET channel NPN Rmod N+ P+ P+ Drain-to-Source Body Diode (Created when NPN base-emitter is properly shorted by source metal) N- EPI PNP KEY METAL SiO2 N+ BUFFER P+ SUBSTRATE N
ON Semiconductor
Original
difference between IGBT and MOSFET IN inverter IGBT SCHEMATIC DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs rectifier pwm igbt AN1541/D

IGBT SCHEMATIC

Abstract: motorola scr cross reference substrate for an IGBT is P+ as shown in Figure 3a. The n­ epi resistivity determines the breakdown , POLYSILICON GATE N+ P+ P­ P­ N+ NPN Rshorting P+ MOSFET Rmod N­ EPI PNP N+ BUFFER P+ SUBSTRATE COLLECTOR Figure 3a. Cross Section and Equivalent Schematic of an Insulated Gate Bipolar Transistor (IGBT) Cell GATE SOURCE KEY METAL SiO2 POLYSILICON GATE N+ P­ JFET channel NPN (1) To increase the breakdown voltage of the MOSFET, the n­ epi region
Motorola
Original
AN1541 motorola scr cross reference BJT npn motorola MGW20N60D power BJT PNP BJT isolated Base Drive circuit BJT characteristics

1084CM

Abstract: LM 1117 adc Q uad P re c is io n Z e ro -D rift Op A m p w /ln te rn a l Caps JFET In p u t, H igh S peed, P re cisio n Op A m p JFET In p u t, H ig h S pee d, P re c is io n Op A m p D ual JFET In p u t, H igh S peed, P re cisio n Op A m p D ual JFET In p u t, H ig h S pee d, P re c is io n O p A m p Q uad JFET In p u t, H ig h S pee d, P re c is io n Op A m p Q uad JFET In p u t, H igh S pee d, P re c is io n Op , P re c is io n Op A m p , C -Loa d D ual L o w N o ise, P re c is io n , JFET In p u t Op A m p Q
-
OCR Scan
1084CM LM 1117 adc 1047cL LTC1290 C1275A C693C LT1001C LT1006 LT1008 LT1012 LT1013I LT1014D

tl068

Abstract: TL060CP P TYPE SUBSTRATE Formation of JFET drain and source and NPN base JFET - - llJ p+ JFET NPN r-vâ'" jâ'"i_j- 1 â'" am* rrf |P 111 P+ N -[ NPN emitter and collector and JFET gate formation NPN N+ 1- 1 - N -1 N+ P+ p+ N 1 i 1 - . P+ 1 i p NPN JFET NPN Gate ^ p+ r Si5l |p , Metalization JFET | m N 1 i p JFET gate implants P tin In the Texas Instruments BIFET
-
OCR Scan
tl068 TL060CP tl0828 TL061 TL087 TL088 TL287 TL288

TEMIC K153P

Abstract: TSHF5471 IV 500-V single-/dual-metal (5 u) BiCDMOS P JFET P-channel JFET BIPOLAR Bipolar , method defined in standard JEDEC 16: 6 AOQ = p · LAR · 10 ( ppm) where: number of devices rejected p= total number of devices tested LAR = lot acceptance rate: number of lots rejected LAR = 1 , / FAMOS dual-metal, single-poly LVSGCMOS Low-voltage silicon gate (3 u) CMOS P MOS HVMGCMOS High-voltage metal gate (5 u) CMOS N DMOS HVSGCMOS High-voltage silicon gate (5 u) CMOS P 1.6
-
Original
TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 WD481 WD48101 WD499 WD514 WDG965 PDIP16

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 120 J A, J, K A, P, X ­ ­ JFET 4-Channel SPST DG641 DG411 DG412 15 35 35 10 , 108 73 0.3 J, Y A, P A, J, K, Z Video JFET ­ DG187 DG419 DG305A 30 35 50 1 , A, K, P JFET 8-Pin Package ­ DG387A DG188 50 75 1 1 300 250 10 N/A 44 38 ­ ­ 7.65 73 A, J, K A, P, X ­ JFET DG189 DG643 DG190 10 15 30 10 10 , JFET A = Metal Case P = Sidebraze (08/25/95) J = Plastic DIP X = Flatpack K = CerDIP Y =
Temic Semiconductors
Original
UA6538 DC motor speed control using 555 and ir sensor UAA145 U2740B-FP U2840B CQY80 U3750BM U3760MB-FN U3760MB-SD SSO-44 SD-40 U3800BM

k2645

Abstract: k4005 Potentiometer med 6mm axel Kolpotentiometer Enkel Radiom typ P-20C. Metallkåpa Ø21.6mm. Plastaxel Ø6mm.längd
-
Original
k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 MK135 MK136 MK137 MK138 MK139 MK140

Siliconix JFET Dual

Abstract: Siliconix Dual N-Channel JFET MOS N ENH 2N6661 251U N JFET 2N4392 3N145 P MOS ENH 3N163 703U N JFET 2N4220 3N146 P MOS ENH 3N163 704U N JFET 2N4220 3N155 P MOS ENH 3N163 705U N JFET 2N4224 3N155A P MOS ENH 3N163 707U N JFET 2N4860 3N156 P MOS ENH 3N163 o> 714U N JFET 2N3822 3N156A P MOS ENH 3N163 o 734U N JFET 2N4416 3N157 P MOS ENH 3N163 752U N JFET 2N4340 3N158A P MOS ENH 3N163 '35 Å" 753 U N JFET 2N4341 3N163 P
-
OCR Scan
2N5196 2N5197 2N5198 2N5199 2N5545 2N5546 Siliconix Dual N-Channel JFET U402 dual fet FET 2N5459 jfet 2N5198 u402 siliconix dual jfet

2N6658

Abstract: J201 Replacement V MOS N ENH 2N6660 250U N JFET 2N4091 2N6661 V MOS N ENH 2N6661 251U N JFET 2N4392 3N145 P MOS ENH 3N163 703U N JFET 2N4220 3N146 P MOS ENH 3N163 704U N JFET 2N4220 3N155 P MOS ENH 3N163 705U N JFET 2N4224 3N155A P MOS ENH 3N163 707U N JFET 2N4860 3N156 P MOS ENH 3N163 o> 714U N JFET 2N3822 3N156A P MOS ENH 3N163 o 734U N JFET 2N4416 3N157 P MOS ENH 3N163 752U N JFET 2N4340 3N158A P
-
OCR Scan
1280A PN4304 2N3323 JFET siliconix J204 cross reference PN4416 J271-18 PN4302 FN4118A FN4119 FN4119A FN4392
Showing first 20 results.