NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: stress ratings only and functional device operation is not implied. BC556 BC556 BC557 BC558 BC558 BC556 BC556 BC557 , TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-051 QW-R201-051.C 3 of 4 BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER , E Packing Tape Box Bulk Tape Box Bulk Tape Box Bulk 1 of 4 QW-R201-051 QW-R201-051.C BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified ... | Original |
4 pages, |
BC556 BC557 transistor 558 transistor 557 b BC558 TRANSISTOR 557 TRANSISTOR C 557 B transistor c 557 BC557 SWITCHING TRANSISTOR operation of BC557 TRANSISTOR BC556/557/558 BC556/557/558 abstract |
|
|||
| Abstract: Box Bulk Tape Box Bulk 1 of 4 QW-R201-051 QW-R201-051.B BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR , TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-051 QW-R201-051.B 3 of 4 BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER , Absolute maximum ratings are stress ratings only and functional device operation is not implied. BC556 BC556 BC557 BC558 BC558 BC556 BC556 BC557 BC558 BC558 THERMAL DATA PARAMETER Junction to Ambient Junction to Case ... | Original |
4 pages, |
uses of bc557 BC557 BC557g bc557l BC558 information of BC558 transistor 557 b BC556 operation of BC557 TRANSISTOR transistor c 558 TRANSISTOR C 557 B BC556/557/558 BC556/557/558 abstract |
|
|||
| Abstract: (V) -65 The safe operating area curves indicate Ic-VCE limits of the transistor that must be observed , MAXIMUM RATINGS Rating Symbol BC5S6 BC557 BC558 BC558 Unit Collector-Emitter Voltage VCEO -65 -45 -30 Vdc , ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) BC556 BC556,B BC557,A,B,C BC558B BC558B CASE 29-04, STYLE , mAdc, lB = 0) BC556 BC556 -65 - - BC557 -45 - - BC558 BC558 -30 - - Collector-Base Breakdown Voltage V(BR)CBO V dC = -100 ftAdc) BC556 BC556 -80 - - BC557 -50 - - BC558 BC558 -30 - - Emitter-Base Breakdown ... | OCR Scan |
5 pages, |
TRANSISTOR BC557C BC557 BC557 transistor BC557A BC556 BC558 BC558B BC557C operation of BC557 TRANSISTOR BC557 MOTOROLA BC557 abstract |
|
|||
| Abstract: device. Limiting values are stress ratings only and operation of the device at these or any other , DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 M3D186 BC556 BC556; BC557 PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Oct 11 NXP Semiconductors Product data sheet PNP general purpose transistors BC556 BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 BC546 and BC547 BC547. ... | Original |
8 pages, |
SC-43A bc546 transistor BC547 BC556 BC556A BC556B bc557 BC557 pin description BC557B BC557C BC546 BC547 sot54 BC547 NXP operation of BC557 TRANSISTOR M3D186 M3D186 abstract |
|
|||
| Abstract: permanent damage to the device. These are stress ratings only and operation of the device at these or at , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 M3D186 BC556 BC556; BC557 PNP general purpose transistors Product specification Supersedes data of 1999 Apr 15 2004 Oct 11 Philips Semiconductors Product specification PNP general purpose transistors BC556 BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 BC546 and BC547 BC547. ... | Original |
8 pages, |
SC-43A BC547 BC547 sot54 BC556 bc556 philips BC556A BC556B BC557 BC557B BC557C philips BC557B BC546 BC557 TRANSISTOR application M3D186 M3D186 abstract |
|
|||
| Abstract: transistor that must be observed for reliable operation. Collector load lines for specific circuits must , BC556B BC556B, BC557, A, B, C, BC558B BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com , BC556 BC556 BC557 BC558 BC558 Collector-Base Voltage Vdc � � � VCBO BC556 BC556 BC557 BC558 BC558 , mW/癈 TO� BC557 1.5 12 Shipping BC556B BC556B mW mW/癈 Package BC556BRL1 BC556BRL1 625 5.0 Device TO� 2000/Ammo Pack Publication Order Number: BC556/D BC556/D BC556B BC556B, BC557, A, B, C, BC558B BC558B ... | Original |
8 pages, |
BC556 BC556BRL1 BC556BZL1 bc557 BC557 application note BC557A BC557AZL1 BC557ZL1 BC558 information of BC557 T2 BC558 TRANSISTOR BC558B BC556B BC557 pin out BC556B abstract |
|
|||
| Abstract: curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector , BC556B BC556B, BC557, A, B, C, BC558B BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC556 BC557 BC558 BC558 Collector-Base Voltage BC556 BC556 BC557 BC558 BC558 , BC556B BC556B BC556BRL1 BC556BRL1 BC556BZL1 BC556BZL1 BC557 BC557ZL1 BC557ZL1 BC557A BC557A BC557AZL1 BC557AZL1 BC557B BC557B Package TO92 TO92 TO92 TO92 TO92 , , LLC, 2001 1 November, 2001 Rev. 0 Publication Order Number: BC556B/D BC556B/D BC556B BC556B, BC557, A, B ... | Original |
8 pages, |
BC556B BC557 BC558B BC556B abstract |
|
|||
| Abstract: The safe operating area curves indicate ICVCE limits of the transistor that must be observed for , BC556B BC556B, BC557, A, B, C, BC558B BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC556 BC557 BC558 BC558 Collector-Base Voltage BC556 BC556 BC557 BC558 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base , ORDERING INFORMATION Device BC556B BC556B BC556BRL1 BC556BRL1 BC556BZL1 BC556BZL1 BC557, A BC557AZL1 BC557AZL1 Unit °C/W °C/W BC557B BC557B BC557BRL1 BC557BRL1 ... | Original |
8 pages, |
transistor BC556b BC557 bc556 transistor IC 557B BC556B BC557 BC558B BC556B abstract |
|
|||
| Abstract: device. These are stress ratings only and operation of the device at these or at any other conditions , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 M3D186 BC556 BC556; BC557; BC558 BC558 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete , transistors BC556 BC556; BC557; BC558 BC558 FEATURES PINNING · Low current (max. 100 mA) PIN · Low , General purpose switching and amplification. DESCRIPTION 1 handbook, halfpage PNP transistor in a ... | Original |
12 pages, |
BC548 BC556 BC556 philips BC556A BC557 pin description BC557 PNP TRANSISTOR BC557 TRANSISTOR application BC557A transistor BC557 base collector emitter philips BC BC546 information of BC558 BC558 M3D186 M3D186 abstract |
|
|||
| Abstract: device. These are stress ratings only and operation of the device at these or at any other conditions , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 M3D186 BC556 BC556; BC557 PNP general purpose transistors Product specification Supersedes data of 1997 Mar 27 1999 Apr 15 Philips Semiconductors Product specification PNP general purpose transistors BC556 BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 BC546 and BC547 BC547. ... | Original |
8 pages, |
BC557C BC557B BC557 BC556B BC556A BC556 BC547 BC546 transistor BC557b M3D186 M3D186 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| power transistors BC547 BC547 BC547 BC547 PNP COMPL BC557 hFE max 800 I C max(mA) 100 Ptot Single low power transistors BC557 hFE max 800 NPN COMPL BC547 BC547 BC547 BC547 I C max T min(MHz) 100 Category Single low power transistors BC557C hFE max 800 NPN BC547B BC547B BC547B BC547B PNP COMPL BC557B hFE max 450 I C max(mA) 100 VCEO max(V) 45 Ptot max(mW) 500 h BC557C hFE max 800 I C max(mA) 100 Ptot max(mW) 500 VCEO max(V) 45 Category Single low www.datasheetarchive.com/files/philips/catalog/parametrics/12-v1.html |
Philips | 21/01/2002 | 84.26 Kb | HTML | 12-v1.html |
| level), the line transistor is off. You will find in annexe the specification of the transformer used on the turnoff time of the power transistor). - Parasitic capacitor < 50pf (a too high value leads to a 25 22 m F 250V C33 100pF C46 C47 10nF 10nF Q5 BC557 Q7 BC547 BC547 BC547 BC547 Q8 BC547 BC547 BC547 BC547 Q3 Q4 BC547 BC547 BC547 BC547 BC547 BC547 BC547 BC547 Q9 TIP122 TIP122 TIP122 TIP122 C10 1 and Q10 is : near to the horizontal scanning transistor. This, of course, could not be imple board has been realized in order to provide the user with a complete and simple evaluation tool of the www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1846-v1.htm |
STMicroelectronics | 02/04/1999 | 21.27 Kb | HTM | 1846-v1.htm |
| level), the line transistor is off. You will find in annexe the specification of the transformer used on the turnoff time of the power transistor). - Parasitic capacitor < 50pf (a too high value leads to a 25 22 m F 250V C33 100pF C46 C47 10nF 10nF Q5 BC557 Q7 BC547 BC547 BC547 BC547 Q8 BC547 BC547 BC547 BC547 Q3 Q4 BC547 BC547 BC547 BC547 BC547 BC547 BC547 BC547 Q9 TIP122 TIP122 TIP122 TIP122 C10 1 and Q10 is : near to the horizontal scanning transistor. This, of course, could not be imple board has been realized in order to provide the user with a complete and simple evaluation tool of the www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1846-v2.htm |
STMicroelectronics | 14/06/1999 | 21.23 Kb | HTM | 1846-v2.htm |
| power transistor). - Parasitic capacitor < 50pf (a too high value leads to a transmission of a 220pF 400V C25 22 m F 250V C33 100pF C46 C47 10nF 10nF Q5 BC557 Q7 BC547 BC547 BC547 BC547 Q8 BC547 BC547 BC547 BC547 Q 100nF C12 100 m F 35V C13 470 m F Q10 BC547 BC547 BC547 BC547 Q1 BC557 Q2 STD5N20 STD5N20 STD5N20 STD5N20 C20 100 m F C19 1 Q1 and Q10 is : near to the horizontal scanning transistor. This, of course, could not be imple order to provide the user with a complete and simple evaluation tool of the deflection processor for www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1846.htm |
STMicroelectronics | 20/10/2000 | 24.38 Kb | HTM | 1846.htm |
| transistor is off. You will find in annexe the specification of the transformer used on this board. Two turnoff time of the power transistor). - Parasitic capacitor < 50pf (a too high value leads to a C24 220pF 400V C25 22 m F 250V C33 100pF C46 C47 10nF 10nF Q5 BC557 Q10 BC547 BC547 BC547 BC547 Q1 BC557 Q2 STD5N20 STD5N20 STD5N20 STD5N20 C20 100 m F C19 1nF R35 1k W R45 22k Q1 and Q10 is : near to the horizontal scanning transistor. This, of course, could not be imple www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1846-v3.htm |
STMicroelectronics | 25/05/2000 | 23.09 Kb | HTM | 1846-v3.htm |
| -OUTEM Horizontal Drive Output (emiter of internal transistor) 21 H-OUTCOL Horizontal Drive Output (open collector of internal transistor) 22 BLK OUT Blanking Output, activated during frequency changes, when X value of the power supply voltage V CC is 12V. Perfect operation is obtained if V CC is main - tained in the limits : 10.8V " 13.2V. In order to avoid erratic operation of the circuit during the transient .) output current. The flyback input is composed of an NPN transistor. This input has to be current driven www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5205-v1.htm |
STMicroelectronics | 02/04/1999 | 43.68 Kb | HTM | 5205-v1.htm |
| .) 19 GND Ground 20 H-OUTEM Horizontal Drive Output (emiter of internal transistor) 21 H-OUTCOL Horizontal Drive Output (open collector of internal transistor) 22 BLK OUT Blanking Output, activated during typical value of the power supply voltage V CC is 12V. Perfect operation is obtained if V CC is main - tained in the limits : 10.8V " 13.2V. In order to avoid erratic operation of the circuit during the flyback input is composed of an NPN transistor. This input has to be current driven. The maximum www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5205.htm |
STMicroelectronics | 20/10/2000 | 49.92 Kb | HTM | 5205.htm |
| -OUTEM Horizontal Drive Output (emiter of internal transistor) 21 H-OUTCOL Horizontal Drive Output (open collector of internal transistor) 22 BLK OUT Blanking Output, activated during frequency changes, when X value of the power supply voltage V CC is 12V. Perfect operation is obtained if V CC is main - tained in the limits : 10.8V " 13.2V. In order to avoid erratic operation of the circuit during the transient .) output current. The flyback input is composed of an NPN transistor. This input has to be current driven www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5205-v2.htm |
STMicroelectronics | 14/06/1999 | 43.64 Kb | HTM | 5205-v2.htm |
| transistor) 21 H-OUTCOL Horizontal Drive Output (open collector of internal transistor) 22 BLK OUT value of the power supply voltage V CC is 12V. Perfect operation is obtained if V CC is main - tained in the limits : 10.8V " 13.2V. In order to avoid erratic operation of the circuit during duty cycle adjustable from 30% to 50%. In order to ensure a reliable operation of the scanning . The output stage is composed of a Darlington NPN bipolar transistor. Both the collector and the www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5205-v3.htm |
STMicroelectronics | 25/05/2000 | 45.51 Kb | HTM | 5205-v3.htm |
| Voltage (12V Typ.) 19 GND Ground 20 H-OUTEM Horizontal Drive Output (emiter of internal transistor) 21 H-OUTCOL Horizontal Drive Output (open collector of internal transistor) 22 BLK OUT Blanking Output, activated during Power Supply The typical value of the power supply voltage V CC is 12V. Perfect operation is obtained if V CC is main- tained in the limits : 10.8V " 13.2V. In order to avoid erratic operation of charge pump with a + 0.5mA (typ.) output current. The flyback input is composed of an NPN transistor www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4574-v2.htm |
STMicroelectronics | 14/06/1999 | 42.49 Kb | HTM | 4574-v2.htm |