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operation of BC557 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: stress ratings only and functional device operation is not implied. BC556 BC556 BC557 BC558 BC558 BC556 BC556 BC557 , TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-051 QW-R201-051.C 3 of 4 BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER , B E Packing Tape Box Bulk Tape Box Bulk Tape Box Bulk 1 of 4 QW-R201-051 QW-R201-051.C BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified ... Unisonic Technologies
Original
datasheet

4 pages,
195.31 Kb

transistor c 558 BC556 BC557 BC558 transistor 558 TRANSISTOR 557 transistor bc558 features of pnp transistor BC557 free BC557 B 557 PNP TRANSISTOR transistor 557 b BC557 SWITCHING TRANSISTOR transistor c 557 BC556/557/558 TRANSISTOR C 557 B BC556/557/558 operation of BC557 TRANSISTOR BC556/557/558 BC556/557/558 BC556/557/558 TEXT
datasheet frame
Abstract: °C 1s TJ = 25°C 3 ms The safe operating area curves indicate IC-VCE limits of the transistor that , 0.6 - 900 dB NF1 NF2 2.5 10 RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model , * COLLECTOR 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC556 BC557 BC558 BC558 Collector-Base Voltage BC556 BC556 BC557 BC558 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base , simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and ... ON Semiconductor
Original
datasheet

8 pages,
237.46 Kb

hFE 8 BC558B 331 TRANSISTOR BC550C TRANSISTOR TEXT
datasheet frame
Abstract: device. Limiting values are stress ratings only and operation of the device at these or any other , DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 M3D186 BC556 BC556; BC557 PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Oct 11 NXP Semiconductors Product data sheet PNP general purpose transistors BC556 BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 BC546 and BC547 BC547 ... NXP Semiconductors
Original
datasheet

8 pages,
65.34 Kb

SC-43A BC546 nxp bc546 transistor BC547 BC556 BC556A BC556B BC557 pin description BC546 BC557B BC557C information of BC557 nxp bc547 bc557 M3D186 BC547 sot54 M3D186 BC547 NXP M3D186 of pnp transistor BC557 M3D186 operation of BC557 TRANSISTOR M3D186 M3D186 M3D186 TEXT
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Abstract: may cause permanent damage to the device. These are stress ratings only and operation of the device , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 M3D186 BC556 BC556; BC557 PNP general purpose transistors Product specification Supersedes data of 1999 Apr 15 2004 Oct 11 Philips Semiconductors Product specification PNP general purpose transistors BC556 BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 BC546 and BC547 BC547 ... Philips Semiconductors
Original
datasheet

8 pages,
52.66 Kb

BC557 BC556B BC556A bc556 philips BC556 BC547 sot54 BC547 BC546 SC-43A Bc557 data BC557C BC557B PHILIPS BC557B BC557 SWITCHING APPLICATION TRANSISTOR BC557 pin M3D186 BC557 TRANSISTOR application M3D186 philips BC557B M3D186 free BC557 M3D186 BC557 application note M3D186 M3D186 M3D186 TEXT
datasheet frame
Abstract: Box Bulk Tape Box Bulk 1 of 4 QW-R201-051 QW-R201-051.B BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR , TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-051 QW-R201-051.B 3 of 4 BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER , . Absolute maximum ratings are stress ratings only and functional device operation is not implied. BC556 BC556 BC557 BC558 BC558 BC556 BC556 BC557 BC558 BC558 THERMAL DATA PARAMETER Junction to Ambient Junction to Case ... Unisonic Technologies
Original
datasheet

4 pages,
195.38 Kb

uses of bc557 BC558 TRANSISTOR 557 BC557g BC557 BC556L TO-92 BC556 information of BC558 bc557l transistor c 558 free BC557 of pnp transistor BC557 transistor bc558 features transistor c 557 BC556/557/558 transistor 557 b BC556/557/558 B 557 PNP TRANSISTOR BC556/557/558 operation of BC557 TRANSISTOR BC556/557/558 TRANSISTOR C 557 B W 65 BC556/557/558 TRANSISTOR C 557 B BC556/557/558 BC556/557/558 BC556/557/558 TEXT
datasheet frame
Abstract: ratings only and operation of the device at these or at any other conditions above those given in the , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 M3D186 BC556 BC556; BC557; BC558 BC558 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete , transistors BC556 BC556; BC557; BC558 BC558 FEATURES PINNING · Low current (max. 100 mA) PIN · Low , General purpose switching and amplification. DESCRIPTION 1 handbook, halfpage PNP transistor in a ... Philips Semiconductors
Original
datasheet

12 pages,
79.89 Kb

BC556 BC557 pin description BC557 PNP TRANSISTOR BC557 TRANSISTOR application BC557A Use of bc558 transistor BC557B PHILIPS BC558 bc558 philips bc547 collector base emitter BC547 sot54 BC557 application note BC557A philips M3D186 bc557b M3D186 BC548 M3D186 mar 709 M3D186 operation of BC557 TRANSISTOR M3D186 bc557 M3D186 BC547 M3D186 BC548 or BC558B TRANSISTOR M3D186 M3D186 M3D186 TEXT
datasheet frame
Abstract: VOLTAGE (V) The safe operating area curves indicate Ic -V C E of 1he transistor that must be observed , BC556 BC556.B BC557,A,B,C BC558B BC558B 3 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C , Storage Junction Temperature Range Symbol VCEO VCBO vebo BC556 BC556 -6 5 -8 0 BC557 -4 5 -5 0 -5 , = 0) v (BR)CEO BC556 BC556 BC557 BC558 BC558 v (BR)CBO BC556 BC556 BC557 BC558 BC558 V(BR)EBO BC556 BC556 BC557 BC558 BC558 'c e s BC556 BC556 BC557 BC558 BC558 BC556 BC556 BC557 BC558 BC558 - - - V -6 5 -4 5 -3 0 - C ollecto r-B a se Breakdown Voltage ... OCR Scan
datasheet

5 pages,
179.43 Kb

557B transistor BC556b BC557A transistor c 557B TRANSISTOR BC557C 558B BC556 motorola bc557 transistor IC 557B BC558B bc557c operation of BC557 TRANSISTOR BC557 MOTOROLA BC556B TEXT
datasheet frame
Abstract: curves indicate IC−VCE limits of the transistor that must be observed for reliable operation , Collector - Emitter Voltage Value VCEO Vdc VCBO Vdc −80 −50 −30 BC556 BC556 BC557 BC558 BC558 Emitter - Base Voltage 3 EMITTER −65 −45 −30 BC556 BC556 BC557 BC558 BC558 Collector - , stress ratings only. Functional operation above the Recommended Operating Conditions is not implied , section on page 6 of this data sheet. Publication Order Number: BC556B/D BC556B/D BC556B BC556B, BC557A BC557A, B, C ... ON Semiconductor
Original
datasheet

7 pages,
72.7 Kb

BC556B BC557A BC558B TEXT
datasheet frame
Abstract: The safe operating area curves indicate IC­VCE limits of the transistor that must be observed for , BC556B BC556B, BC557, A, B, C, BC558B BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC556 BC557 BC558 BC558 Collector-Base Voltage BC556 BC556 BC557 BC558 BC558 , BC556B BC556B BC556BRL1 BC556BRL1 BC556BZL1 BC556BZL1 BC557 BC557ZL1 BC557ZL1 BC557A BC557A BC557AZL1 BC557AZL1 BC557B BC557B Package TO­92 TO­92 TO­92 TO­92 TO , BC556B BC556B, BC557, A, B, C, BC558B BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted ... ON Semiconductor
Original
datasheet

6 pages,
161.74 Kb

transistor BC556b bc557 bc558b BC556B BC557 BC558B BC556 BC558 TEXT
datasheet frame
Abstract: external totem pole driver circuit, comprised of a NPN and a PNP transistor, is recommended to be used to , document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to , the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms ... Infineon Technologies
Original
datasheet

22 pages,
2584.96 Kb

ZENER diode 400V 5A adapter 24V 5A SMPS circuit diagram D100 TO-220 half bridge smps transformer design ZD203 LLC resonant converter transformer EVALHS-200W-ICE1HS01G TDK CORE SMPS CIRCUIT DIAGRAM lg SMPS 12V llc 24v 5a smps 24V SMPS 200w circuit smps resonant llc transistor NPN c115 SMPS CIRCUIT DIAGRAM 24v core pc47 LLC resonant transformer 24V 5A SMPS circuit diagram TRANSISTOR D206 ICE1HS01G TEXT
datasheet frame

Archived Files

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(HOUT at high level), the line transistor is off. You will find in annexe the specification of the H (this data set the turnoff time of the power transistor). - Parasitic capacitor < 50pf (a too transistor. This, of course, could not be imple- mented on present board, which does not incorpo- rate the this point will induce variations of the power transistor desatura- tion time, which will cause been realized in order to provide the user with a complete and simple evaluation tool of the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1846-v3.htm
STMicroelectronics 25/05/2000 23.09 Kb HTM 1846-v3.htm
transistor is off. You will find in annexe the specification of the transformer used on this board. Two key the power transistor). - Parasitic capacitor < 50pf (a too high value leads to a transmission of a point will induce variations of the power transistor desatura- tion time, which will cause jitter. When a complete and simple evaluation tool of the deflection processor for mul- tisync monitor TDA9103 TDA9103 (and possibly of the verti- cal booster TDA8172 TDA8172). This demoboard is in fact the core of a monitor
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1846-v2.htm
STMicroelectronics 14/06/1999 21.23 Kb HTM 1846-v2.htm
high level), the line transistor is off. You will find in annexe the specification of the transformer data set the turnoff time of the power transistor). - Parasitic capacitor < 50pf (a too high value : near to the horizontal scanning transistor. This, of course, could not be imple- mented on present , must be well filtered, since a ripple at this point will induce variations of the power transistor realized in order to provide the user with a complete and simple evaluation tool of the deflection
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1846.htm
STMicroelectronics 20/10/2000 24.38 Kb HTM 1846.htm
transistor is off. You will find in annexe the specification of the transformer used on this board. Two key the power transistor). - Parasitic capacitor < 50pf (a too high value leads to a transmission of a point will induce variations of the power transistor desatura- tion time, which will cause jitter. When a complete and simple evaluation tool of the deflection processor for mul- tisync monitor TDA9103 TDA9103 (and possibly of the verti- cal booster TDA8172 TDA8172). This demoboard is in fact the core of a monitor
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1846-v1.htm
STMicroelectronics 02/04/1999 21.27 Kb HTM 1846-v1.htm
Pin 16 (PNP base) 1 m A Tonmax Maximum ON Time of the external power transistor % of Horizontal period between 4.5 and 5.5V. In order to avoid erratic operation of the circuit during the transient phase of V input consists of an NPN transistor. This input must be current driven. The maximum recommended input voltage drop of the output V CEsat is 0.4V Max. Obviously the power scanning transistor cannot be directly transistor either of bipolar or MOS type. II.5 - X-RAY Protection The X-Ray protection is activated by
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5969.htm
STMicroelectronics 20/10/2000 58.08 Kb HTM 5969.htm
Main channel input sensitivity (IF input) rms(mV) 0.8 Secondary channel lock range of PLL demodulators(MHz) 5.5 to 8.5 Secondary/ secondary channel separation(dB) 74 Noise reduction of On-chip frequency synthesizer and mixer Main channel lock range of PLL demodulator(MHz) 5.5 to , language 1, language 2, main audio, external Selection of secondary audio signal HF inputs 1 or 2 of 6 Wide band demodulation of main audio signal Line outputs (SCART level
/datasheets/files/philips/catalog/parametrics/12-v1.html
Philips 21/01/2002 84.26 Kb HTML 12-v1.html
SENSE Sensing of external B+ switching transistor current 17 B+GND Ground (related to B+ reference controlled OFF when the output transistor is OFF. 7. Initial Condition for Safe Operation Start Up 8. See Tonmax Maximum ON Time of the external power transistor % of Horizontal period, f 0 = 27kHz (see Note 17 order to avoid erratic operation of the circuit during the transient phase of V CC and V DD switching on circuit. An interface has to be added between the circuit and the power transistor either of bipolar or MOS
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5969-v2.htm
STMicroelectronics 14/06/1999 52.19 Kb HTM 5969-v2.htm
SENSE Sensing of external B+ switching transistor current 17 B+GND Ground (related to B+ reference controlled OFF when the output transistor is OFF. 7. Initial Condition for Safe Operation Start Up 8. See Tonmax Maximum ON Time of the external power transistor % of Horizontal period, f 0 = 27kHz (see Note 17 order to avoid erratic operation of the circuit during the transient phase of V CC and V DD switching on circuit. An interface has to be added between the circuit and the power transistor either of bipolar or MOS
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5969-v1.htm
STMicroelectronics 02/04/1999 52.23 Kb HTM 5969-v1.htm
Typ.) 19 GND Ground 20 H-OUTEM Horizontal Drive Output (emiter of internal transistor) 21 H-OUTCOL Horizontal Drive Output (open collector of internal transistor) 22 BLK OUT Blanking Output, activated during typical value of the power supply voltage V CC is 12V. Perfect operation is obtained if V CC is main- tained in the limits : 10.8V " 13.2V. In order to avoid erratic operation of the circuit reliable operation of the scanning power part, the output is inhibited in the following circumstances : -
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4574-v3.htm
STMicroelectronics 17/07/2000 44.26 Kb HTM 4574-v3.htm
16 I SENSE Sensing of external B+ switching transistor current 17 B+GND Ground (related to B+ output transistor is OFF. 7. Initial Condition for Safe Operation Start Up 8. See Figure 14. 9. S and power transistor % of Horizontal period, f 0 = 27kHz (see Note 17) 100 % B+OSV B+ Output 5.5V. In order to avoid erratic operation of the circuit during the transient phase of V CC and V consists of an NPN transistor. This input must be current driven. The maximum recommended input current
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5969-v3.htm
STMicroelectronics 25/05/2000 54.07 Kb HTM 5969-v3.htm