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operation of BC557 TRANSISTOR

Catalog Datasheet Results Type PDF Document Tags
Abstract: ) The safe operating area curves indicate Ic -V C E of 1he transistor that must be observed for reliable , BC556 BC556.B BC557,A,B,C BC558B BC558B 3 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C , Storage Junction Temperature Range Symbol VCEO VCBO vebo BC556 BC556 -6 5 -8 0 BC557 -4 5 -5 0 -5 , = 0) v (BR)CEO BC556 BC556 BC557 BC558 BC558 v (BR)CBO BC556 BC556 BC557 BC558 BC558 V(BR)EBO BC556 BC556 BC557 BC558 BC558 'c e s BC556 BC556 BC557 BC558 BC558 BC556 BC556 BC557 BC558 BC558 - - - V -6 5 -4 5 -3 0 - C ollecto r-B a se Breakdown Voltage ... OCR Scan
datasheet

5 pages,
179.43 Kb

TRANSISTOR BC557C BC556 motorola bc557 transistor IC 557B 558B 557B BC558B transistor c 557B bc557c operation of BC557 TRANSISTOR BC557 MOTOROLA BC556B datasheet abstract
datasheet frame
Abstract: Box Bulk Tape Box Bulk 1 of 4 QW-R201-051 QW-R201-051.B BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR , TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-051 QW-R201-051.B 3 of 4 BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER , Absolute maximum ratings are stress ratings only and functional device operation is not implied. BC556 BC556 BC557 BC558 BC558 BC556 BC556 BC557 BC558 BC558 THERMAL DATA PARAMETER Junction to Ambient Junction to Case ... Original
datasheet

4 pages,
195.38 Kb

uses of bc557 BC556 BC557 BC557g BC558 information of BC558 B 557 PNP TRANSISTOR TRANSISTOR 557 transistor 557 b transistor c 557 bc557l transistor c 558 operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 BC556/557/558 BC556/557/558 abstract
datasheet frame
Abstract: stress ratings only and functional device operation is not implied. BC556 BC556 BC557 BC558 BC558 BC556 BC556 BC557 , TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-051 QW-R201-051.C 3 of 4 BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER , E Packing Tape Box Bulk Tape Box Bulk Tape Box Bulk 1 of 4 QW-R201-051 QW-R201-051.C BC556/557/558 BC556/557/558 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified ... Original
datasheet

4 pages,
195.31 Kb

transistor c 558 BC556 BC557 BC558 transistor 557 b transistor 558 TRANSISTOR 557 BC557 SWITCHING TRANSISTOR transistor c 557 TRANSISTOR C 557 B operation of BC557 TRANSISTOR BC556/557/558 BC556/557/558 abstract
datasheet frame
Abstract: (V) -65 The safe operating area curves indicate Ic-VCE limits of the transistor that must be observed , MAXIMUM RATINGS Rating Symbol BC5S6 BC557 BC558 BC558 Unit Collector-Emitter Voltage VCEO -65 -45 -30 Vdc , ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) BC556 BC556,B BC557,A,B,C BC558B BC558B CASE 29-04, STYLE , mAdc, lB = 0) BC556 BC556 -65 - - BC557 -45 - - BC558 BC558 -30 - - Collector-Base Breakdown Voltage V(BR)CBO V dC = -100 ftAdc) BC556 BC556 -80 - - BC557 -50 - - BC558 BC558 -30 - - Emitter-Base Breakdown ... OCR Scan
datasheet

5 pages,
231.49 Kb

transistor BC558 BC557 BC557 transistor BC556 BC558 TRANSISTOR BC557C BC557 circuits BC558B BC557A BC557C operation of BC557 TRANSISTOR BC557 MOTOROLA datasheet abstract
datasheet frame
Abstract: device. Limiting values are stress ratings only and operation of the device at these or any other , DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 M3D186 BC556 BC556; BC557 PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Oct 11 NXP Semiconductors Product data sheet PNP general purpose transistors BC556 BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 BC546 and BC547 BC547. ... Original
datasheet

8 pages,
65.34 Kb

SC-43A BC546 nxp bc546 transistor BC547 BC556 BC556A BC556B BC546 BC557 pin description BC557B BC557C nxp bc547 information of BC557 bc557 M3D186 M3D186 abstract
datasheet frame
Abstract: permanent damage to the device. These are stress ratings only and operation of the device at these or at , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 M3D186 BC556 BC556; BC557 PNP general purpose transistors Product specification Supersedes data of 1999 Apr 15 2004 Oct 11 Philips Semiconductors Product specification PNP general purpose transistors BC556 BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 BC546 and BC547 BC547. ... Original
datasheet

8 pages,
52.66 Kb

SC-43A BC546 BC547 BC547 sot54 BC556 bc556 philips BC556A BC556B BC557 Bc557 data BC557B BC557B PHILIPS BC557C philips BC557B pnp bc547 transistor M3D186 M3D186 abstract
datasheet frame
Abstract: transistor that must be observed for reliable operation. Collector load lines for specific circuits must , BC556B BC556B, BC557, A, B, C, BC558B BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com , BC556 BC556 BC557 BC558 BC558 Collector-Base Voltage Vdc � � � VCBO BC556 BC556 BC557 BC558 BC558 , mW/癈 TO� BC557 1.5 12 Shipping BC556B BC556B mW mW/癈 Package BC556BRL1 BC556BRL1 625 5.0 Device TO� 2000/Ammo Pack Publication Order Number: BC556/D BC556/D BC556B BC556B, BC557, A, B, C, BC558B BC558B ... Original
datasheet

8 pages,
107.33 Kb

BC556 BC556BRL1 BC556BZL1 bc557 BC557 application note BC557A BC557AZL1 BC557ZL1 BC558 free BC557 T2 BC558 TRANSISTOR information of BC557 BC558B BC556B BC556B BC557 BC556B abstract
datasheet frame
Abstract: curves indicate IC­VCE limits of the transistor that must be observed for reliable operation. Collector , BC556B BC556B, BC557, A, B, C, BC558B BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC556 BC557 BC558 BC558 Collector-Base Voltage BC556 BC556 BC557 BC558 BC558 , BC556B BC556B BC556BRL1 BC556BRL1 BC556BZL1 BC556BZL1 BC557 BC557ZL1 BC557ZL1 BC557A BC557A BC557AZL1 BC557AZL1 BC557B BC557B Package TO­92 TO­92 TO­92 TO­92 TO­92 , , LLC, 2001 1 November, 2001­ Rev. 0 Publication Order Number: BC556B/D BC556B/D BC556B BC556B, BC557, A, B ... Original
datasheet

8 pages,
107.32 Kb

T1 BC558 information of BC557 free BC557 BC557 pin out transistor BC557 base collector emitter bc558b BC556B BC557 BC558B BC556B abstract
datasheet frame
Abstract: The safe operating area curves indicate IC­VCE limits of the transistor that must be observed for , BC556B BC556B, BC557, A, B, C, BC558B BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC556 BC557 BC558 BC558 Collector-Base Voltage BC556 BC556 BC557 BC558 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base , ORDERING INFORMATION Device BC556B BC556B BC556BRL1 BC556BRL1 BC556BZL1 BC556BZL1 BC557, A BC557AZL1 BC557AZL1 Unit °C/W °C/W BC557B BC557B BC557BRL1 BC557BRL1 ... Original
datasheet

8 pages,
115.46 Kb

APPLICATION OF BC557 transistor BC557 application note BC557 TRANSISTOR application bc558b transistor information of BC557 transistor BC556b T2 BC558 TRANSISTOR BC557 bc556 bc558c transistor IC 557B bc556b bc558b BC556B BC557 BC556B abstract
datasheet frame
Abstract: device. These are stress ratings only and operation of the device at these or at any other conditions , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 M3D186 BC556 BC556; BC557; BC558 BC558 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete , transistors BC556 BC556; BC557; BC558 BC558 FEATURES PINNING · Low current (max. 100 mA) PIN · Low , General purpose switching and amplification. DESCRIPTION 1 handbook, halfpage PNP transistor in a ... Original
datasheet

12 pages,
79.89 Kb

BC556 BC548 BC547 BC557A BC546 philips BC transistor BC557 base collector emitter transistor BC558 information of BC558 BC558 BC557B PHILIPS philips BC557B bc547 collector base emitter BC547 sot54 M3D186 M3D186 abstract
datasheet frame

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the power transistor). - Parasitic capacitor < 50pf (a too high value leads to a transmission of a place for transistors Q1 and Q10 is : near to the horizontal scanning transistor. This, of course induce variations of the power transistor desatura- tion time, which will cause jitter. When the has been realized in order to provide the user with a complete and simple evaluation tool of the deflection processor for mul- tisync monitor TDA9103 TDA9103 TDA9103 TDA9103 (and possibly of the verti- cal booster TDA8172 TDA8172 TDA8172 TDA8172).
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highlighted : - Leakage inductor 3 2 m H (this data set the turnoff time of the power transistor). - Q10 is : near to the horizontal scanning transistor. This, of course, could not be imple- mented on with a complete and simple evaluation tool of the deflection processor for mul- tisync monitor TDA9103 TDA9103 TDA9103 TDA9103 (and possibly of the verti- cal booster TDA8172 TDA8172 TDA8172 TDA8172). This demoboard is in fact the core of a board), a line power board (EHT, S-correction, de- flection transistor), a SMPS board and a video
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transistor is off. You will find in annexe the specification of the transformer used on this board. Two key the power transistor). - Parasitic capacitor < 50pf (a too high value leads to a transmission of a point will induce variations of the power transistor desatura- tion time, which will cause jitter. When the user with a complete and simple evaluation tool of the deflection processor for mul- tisync monitor TDA9103 TDA9103 TDA9103 TDA9103 (and possibly of the verti- cal booster TDA8172 TDA8172 TDA8172 TDA8172). This demoboard is in fact the core of a
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STMicroelectronics 14/06/1999 21.23 Kb HTM 1846-v2.htm
transistor is off. You will find in annexe the specification of the transformer used on this board. Two key the power transistor). - Parasitic capacitor < 50pf (a too high value leads to a transmission of a point will induce variations of the power transistor desatura- tion time, which will cause jitter. When the user with a complete and simple evaluation tool of the deflection processor for mul- tisync monitor TDA9103 TDA9103 TDA9103 TDA9103 (and possibly of the verti- cal booster TDA8172 TDA8172 TDA8172 TDA8172). This demoboard is in fact the core of a
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STMicroelectronics 02/04/1999 21.27 Kb HTM 1846-v1.htm
Secondary channel lock range of PLL demodulators(MHz) 5.5 to 8.5 Secondary/ secondary channel separation(dB) 74 Noise reduction of the secondary audio signals Secondary channel input sensitivity (IF input) rms(V) 0.8 On-chip frequency synthesizer and mixer Main channel lock range of PLL : stereo, language 1, language 2, main audio, external Selection of secondary audio signal HF inputs 1 or 2 of 6 Wide band demodulation of main audio signal Line outputs (SCART level) I2C-bus
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output transistor is OFF. 7. Initial Condition for Safe Operation Start Up 8. See Figure 14. 9. S Tonmax Maximum ON Time of the external power transistor % of Horizontal period, f 0 = 27kHz 5.5V. In order to avoid erratic operation of the circuit during the transient phase of V CC and STORAGE TIME OF THE HORIZONTAL SCANNING TRAN - SISTOR. DESCRIPTION The TDA9109/SN TDA9109/SN TDA9109/SN TDA9109/SN is a monolithic display monitors to be built with a reduced number of external components. This is advance
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Input of B+ control loop 16 I SENSE Sensing of external B+ switching transistor current 17 B+GND Ground controlled OFF when the output transistor is OFF. 7. Initial Condition for Safe Operation Start Up 8. See Tonmax Maximum ON Time of the external power transistor % of Horizontal period, f 0 = 27kHz (see Note 17 order to avoid erratic operation of the circuit during the transient phase of V CC and V DD switching on circuit. An interface has to be added between the circuit and the power transistor either of bipolar or MOS
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output transistor is OFF. 7. Initial Condition for Safe Operation Start Up 8. See Figure 14. 9. S and power transistor % of Horizontal period, f 0 = 27kHz (see Note 17) 100 % B+OSV B+ Output between 4.5 and 5.5V. In order to avoid erratic operation of the circuit during the transient phase of V consists of an NPN transistor. This input must be current driven. The maximum recommended input current drop of the output V CEsat is 0.4V Max. Obviously the power scanning transistor cannot be directly
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Input of B+ control loop 16 I SENSE Sensing of external B+ switching transistor current 17 B+GND Ground controlled OFF when the output transistor is OFF. 7. Initial Condition for Safe Operation Start Up 8. See Tonmax Maximum ON Time of the external power transistor % of Horizontal period, f 0 = 27kHz (see Note 17 order to avoid erratic operation of the circuit during the transient phase of V CC and V DD switching on circuit. An interface has to be added between the circuit and the power transistor either of bipolar or MOS
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STMicroelectronics 14/06/1999 52.19 Kb HTM 5969-v2.htm
Ground 20 H-OUTEM Horizontal Drive Output (emiter of internal transistor). See description on pages 15-16. 21 H-OUTCOL Horizontal Drive Output (open collector of internal transistor). See description on Sensing of External B+ Switching Transistor Emiter Current 9103-01.TBL TDA9103 TDA9103 TDA9103 TDA9103 2/27 1 2 3 4 5 6 9 10 16 Maximum External Power Transistor on Time % of H-period @ f0 = 27kHz 75 % B+OSV B+ Output Low Level Power Supply The typical value of the power supply voltage V CC is 12V. Perfect operation is obtained if
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