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Abstract: HN 8550 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. , groups, C and D, according to its DC current gain. As complementary type the NPN transistor HN 8050 is , ) HN 8550 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit DC CurrentGain at VCE = -1 V, lc , ® SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of HQNEV TECHWQi.nBV LTD. ) SO 9 0 0 2 HN 8550 w , temperature at a distance ot 2 mm from case HN 8550 1 P Q8 Hot 0.6 0.4 0.2 ° ... OCR Scan
datasheet

5 pages,
333.57 Kb

transistor 8550D PNP PNP transistor 8550 PNP 8550 8550 TRANSISTOR br 8550 c br 8550 c NPN Transistor S 8550 transistor K 8550 s 8550 transistors transistor s 8550 NPN 8550 8550 pnp transistor s 8550 d datasheet abstract
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Abstract: HN 8550 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. , groups, C and D, according to its DC current gain. As complementary type the NPN transistor HN 8050 is , HQNEV TECHNOLOGY LTD. ) HN 8550 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit DC , TECHNOLOGY LTD. ) SO 9 0 0 2 HN 8550 w Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case HN 8550 1 P ... OCR Scan
datasheet

5 pages,
334 Kb

8550 br 8550c NPN Transistor transistor 8550 d BR 8550 transistor transistor s 8550 BR 8550D 8550 pnp transistor 8550 8550D transistor 8550c PNP transistor 8550 c 8550 transistor 8550 pnp transistor datasheet abstract
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Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , /2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8550B 8550B , /2002 ST 8550 Admissible power dissipation versus ambient temperature Collector current versus , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 ... Original
datasheet

5 pages,
303.11 Kb

BR 8050 BR 8550 transistor 8550 transistor K 8550 transistor 8550 8550B br 8550 c NPN Transistor PNP 8550 br 8550 c PNP transistor 8550 BR 8550 ic 8550 pnp transistor st 8550 datasheet abstract
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Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , Code: 724) R Dated : 07/12/2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. , Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 8550 Admissible power dissipation versus , kept at ambient temperature at a distance of 2 mm from case W 1 mA 3 10 ST 8550 ST ... Original
datasheet

5 pages,
342.37 Kb

br 8550 c NPN Transistor PNP 8550 BR 8050 D BR 8050 s 8550 d 8550d 8550b 8550 NPN Transistor 8550 transistor S 8550 transistor npn 8550 st 8050 8550 pnp transistor datasheet abstract
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Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , Code: 724) Dated : 07/12/2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. , Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 8550 Admissible power dissipation versus , kept at ambient temperature at a distance of 2 mm from case W 1 mA 3 10 ST 8550 ST ... Original
datasheet

5 pages,
413.14 Kb

npn 8550 8550D BR 8550 ic BR 8550D BR 8550 transistor PNP 8550 st 8550d PNP transistor 8550 BR 8050 BR 8050 D br 8550 NPN Transistor transistor s 8550 st 8050 ST 8550 datasheet abstract
datasheet frame
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , /2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8550B 8550B , : 07/12/2002 ST 8550 Admissible power dissipation versus ambient temperature Collector current , of 2 mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 ... Original
datasheet

5 pages,
296.39 Kb

BR 8050 D 8550D 8550b BR 8550 ic BR 8550D h 8550 pnp transistor s 8550 d PNP 8550 BR 8050 br 8550 c NPN 8550 PNP transistor 8550 ST 8550 8550 pnp transistor datasheet abstract
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Abstract: applications. As complementary type the NPN transistor MMBT8050C MMBT8050C and MMBT8050D MMBT8050D are recommended. SOT-23 , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , 4 10 ST 8550 ST 8550 5 5 2 -ICES 2 2 10 rthA 5 0.5 5 2 0.2 , Common emitter collector characteristics mA 500 ST 8550 1000 0.9 -V CE =1V 700 500 400 0.85 400 o 150 C 300 h FE ST 8550 200 b Tam oC =25 300 -IC ... Original
datasheet

5 pages,
356.73 Kb

8550 SOT BR 8550 ic 8550 pnp transistor 8550 pnp MMBT8550C MMBT8050D ST MMBT8050D MMBT8050C ST 8550 mmbt8550 br 8550 NPN Transistor npn 8550 MMBT8550D MMBT8050 MMBT8550C abstract
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Abstract: applications. As complementary type the NPN transistor MMBT8050C MMBT8050C and MMBT8050D MMBT8050D are recommended. SOT-23 , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , 4 10 ST 8550 ST 8550 5 5 2 2 -ICES 2 10 rthA 5 0.5 5 2 0.2 , emitter collector characteristics mA 500 ST 8550 1000 ST 8550 0.9 -V CE =1V 0.85 700 , collector characteristics mA 500 mA 100 ST 8550 3.2 2V ST 8550 2.8 0.35 2.4 80 ... Original
datasheet

5 pages,
279.53 Kb

8550 pnp transistor 8550 SOT-23 PACKAGE K 8550 MMBT8550C MMBT8550D MMBT8050D s 8550 c NPN 8550 8550 sot-23 pnp MMBT8050C 8550 8550 SOT-23 8550 NPN Transistor MMBT8550C abstract
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Abstract: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor (To-92 Plastic Package) JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 2SC15-0 HN , 2SC266 2SC266 HN / BC 548 / 9014 2SC402 2SC402 HN / BC 547 / 8550 2SC18 2SC18 HN / BC 548 / 9014 2SC267 2SC267 HN / BC 548 / 9014 2SC403 2SC403 HN / BC 546 / 8550 2SC25 2SC25 HN / BC 546 / 9014 2SC268 2SC268 HN , / 9014 2SC427 2SC427 HN / BC 547 / 8550 2SC28 2SC28 HN / BC 547 / 9014 2SC282 2SC282 HN / BC 548 / 9014 ... Original
datasheet

1 pages,
58.1 Kb

equivalent of transistor 8050 2SC103 2SC337 547 TRANSISTOR pdf 2sc372 datasheet transistor 2sc124 data sheet transistor 9014 bc 548 transistor BC 547 transistor 9014 2SC124 transistor 9014 transistors BC 548 2SC15-0 2SC15-1 2SC15-0 abstract
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Abstract: 3K Q5 8550 Q7 R11 8550 150 Q9 9013 C13 104 Q6 Q8 R10 150 9013 R5 R12 , : www.silan.com.cn 5 R15 1K Q10 R19 690 9013 Q11 9013 R20 150 Q14 8550 Q12 8550 R18 , RX-2C Fosc=116~140 KHz MOD DC-DC ANTENNA C1 68p C3 12p Q1 Q2 8550 C1815 C1815 C2 27p L1 3.3H Q3 R1 L2 270 270 M R3 560 3.3F 180K C5 472 C7 8550 R2 , 5 7 8 Right R18 220K C14 NPN C13 202 http: www.silan.com.cn Q7 9013 ... Original
datasheet

12 pages,
676.37 Kb

2C128 C 9013 tx 2b rx2c a IN4148 DIP-16-300-2 tx-2bs C1815 equivalent tx2b c1815 tx-2b NPN 9013 RX2C DIP-14 DIP-14 abstract
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PSS8550_2 Product information page PSS8550; PNP medium power 25 V transistor General info PNP transistor in a SOT54 (TO-92) plastic package. NPN complement: PSS8050 PSS8050 PSS8050 PSS8050. Features High total power dissipation High current capability. Applications count File size PSS8550 PNP medium power 25 V transistor 10
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PSS8550_1 Product information page PSS8550; PNP medium power 25 V transistor General info PNP transistor in a SOT54 (TO-92) plastic package. NPN complement: PSS8050 PSS8050 PSS8050 PSS8050. Features High total power dissipation High current capability. Applications Medium power switching and muting Amplification Portable radio output amplifier Datsheet status Page count File size PSS8550 PNP medium power 25 V transistor
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2PC1815 2PC1815 2PC1815 2PC1815 - NPN general purpose transistor 2PC1815BL 2PC1815BL 2PC1815BL 2PC1815BL - NPN general purpose transistor 2PC1815GR 2PC1815GR 2PC1815GR 2PC1815GR - NPN general purpose transistor 2PC1815Y 2PC1815Y 2PC1815Y 2PC1815Y - NPN general purpose transistor 2PC4081Q 2PC4081Q 2PC4081Q 2PC4081Q - NPN general purpose transistor
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PSS8050 PSS8050 PSS8050 PSS8050_1 Product information page PSS8050 PSS8050 PSS8050 PSS8050; NPN medium power 25 V transistor General info NPN transistor in a SOT54 (TO-92) plastic package. PNP complement: PSS8550. Features High total power dissipation High current capability. Applications Medium power switching and muting Amplification Portable radio output amplifier Datsheet status Page count File size PSS8050 PSS8050 PSS8050 PSS8050 NPN medium power 25 V transistor
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Philips 23/04/2003 1.83 Kb HTML pss8050_1.html
PSS8050 PSS8050 PSS8050 PSS8050_2 Product information page PSS8050 PSS8050 PSS8050 PSS8050; NPN medium power 25 V transistor General info NPN transistor in a SOT54 (TO-92) plastic package. PNP complement: PSS8550. Features High total power dissipation High current capability. Applications count File size PSS8050 PSS8050 PSS8050 PSS8050 NPN medium power 25 V transistor 10
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2PC1815 2PC1815 2PC1815 2PC1815 - NPN general purpose transistor 2PC4081 2PC4081 2PC4081 2PC4081 - NPN general-purpose transistor 2PC4617 2PC4617 2PC4617 2PC4617 - NPN general-purpose transistor 2PC4617J 2PC4617J 2PC4617J 2PC4617J - NPN general purpose transistor 2PC4617M 2PC4617M 2PC4617M 2PC4617M - NPN general purpose transistors
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2PC1815 2PC1815 2PC1815 2PC1815 - NPN general purpose transistor 2PC1815BL 2PC1815BL 2PC1815BL 2PC1815BL - NPN general purpose transistor 2PC1815GR 2PC1815GR 2PC1815GR 2PC1815GR - NPN general purpose transistor 2PC1815Y 2PC1815Y 2PC1815Y 2PC1815Y - NPN general purpose transistor 2PC4081Q 2PC4081Q 2PC4081Q 2PC4081Q - NPN general purpose transistor
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! SIEMENS Small Signal Semiconductors ! BF799 BF799 BF799 BF799 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 15 V IC = 1.2 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .973 67.6 0.0464 38.0 0.8550 -22.2 0.800 0.7226 178.6 0.863 61.7 0.0451 45.3 0.8558 -24 .433 33.2 0.1113 97.2 0.8546 -50.3 1.700 0.7644 137.7 0.401 31.5 0.1284 98.0 0.8550 -53
www.datasheetarchive.com/files/infineon/ehdata/spar/bf799/rt15v1m2.s2p
Infineon 30/07/1997 2.38 Kb S2P rt15v1m2.s2p
! SIEMENS Small Signal Semiconductors ! BF799 BF799 BF799 BF799 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 15 V IC = 1.2 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .973 67.6 0.0464 38.0 0.8550 -22.2 0.800 0.7226 178.6 0.863 61.7 0.0451 45.3 0.8558 -24 .433 33.2 0.1113 97.2 0.8546 -50.3 1.700 0.7644 137.7 0.401 31.5 0.1284 98.0 0.8550 -53
www.datasheetarchive.com/download/29686886-145335ZC/bf799.zip (RT15V1M2.S2P)
Infineon 08/09/2000 355.23 Kb ZIP bf799.zip
! SIEMENS Small Signal Semiconductors ! BF799 BF799 BF799 BF799 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 15 V IC = 1.2 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .973 67.6 0.0464 38.0 0.8550 -22.2 0.800 0.7226 178.6 0.863 61.7 0.0451 45.3 0.8558 -24 .433 33.2 0.1113 97.2 0.8546 -50.3 1.700 0.7644 137.7 0.401 31.5 0.1284 98.0 0.8550 -53
www.datasheetarchive.com/download/52526200-777295ZC/bf799.zip (RT15V1M2.S2P)
Spice Models 29/07/2012 355.23 Kb ZIP bf799.zip