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npn 8550

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Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , /2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8550B 8550B , /2002 ST 8550 Admissible power dissipation versus ambient temperature Collector current versus , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 ... Semtech Electronics
Original
datasheet

5 pages,
303.11 Kb

transistor 8550 8550E 8550 transistor br 8550 c NPN Transistor br 8550 c PNP 8550 BR 8550 ic BR 8550 transistor 8550 pnp transistor 8550B NPN 8550 st 8550 PNP transistor 8550 8550 NPN Transistor st 8550d BR 8550 D br 8550 NPN Transistor BR 8550 TEXT
datasheet frame
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , Code: 724) R Dated : 07/12/2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ , Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 8550 Admissible power dissipation , are kept at ambient temperature at a distance of 2 mm from case W 1 mA 3 10 ST 8550 ... Semtech Electronics
Original
datasheet

5 pages,
342.37 Kb

br 8550 c 8550d 8550 NPN Transistor npn 8550 S 8550 transistor 8550b st 8050 8550 BR 8550 transistor PNP 8550 8550 pnp transistor PNP transistor 8550 8550 transistor ST 8550 BR 8550 D st 8550d br 8550 NPN Transistor BR 8550 TEXT
datasheet frame
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , Code: 724) Dated : 07/12/2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ , Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 8550 Admissible power dissipation , are kept at ambient temperature at a distance of 2 mm from case W 1 mA 3 10 ST 8550 ... Semtech Electronics
Original
datasheet

5 pages,
413.14 Kb

8550 transistor st 8050 8550 pnp transistor BR 8550 ic ST 8550 K 8550 BR 8550 transistor 8550 NPN Transistor br 8550 c NPN Transistor st 8550d 8550B 8550 PNP 8550 s 8550 transistors PNP transistor 8550 s 8550 d br 8550 NPN Transistor BR 8550 D BR 8550 TEXT
datasheet frame
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , /2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8550B 8550B , : 07/12/2002 ST 8550 Admissible power dissipation versus ambient temperature Collector current , of 2 mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 ... Semtech Electronics
Original
datasheet

5 pages,
296.39 Kb

8550 pnp 8550 pnp transistor h 8550 pnp transistor br 8550 NPN transistors 8550 8550 PNP 8550 c 8550 transistor ST 8550 br 8550 c 8550b BR 8550 transistor 8550 NPN Transistor PNP transistor 8550 st 8550d BR 8550 D BR 8550 br 8550 NPN Transistor TEXT
datasheet frame
Abstract: applications. As complementary type the NPN transistor MMBT8050C MMBT8050C and MMBT8050D MMBT8050D are recommended. SOT , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , 4 10 ST 8550 ST 8550 5 5 2 2 -ICES 2 10 rthA 5 0.5 5 2 0.2 , emitter collector characteristics mA 500 ST 8550 1000 ST 8550 0.9 -V CE =1V 0.85 700 , collector characteristics mA 500 mA 100 ST 8550 3.2 2V ST 8550 2.8 0.35 2.4 80 ... Semtech Electronics
Original
datasheet

5 pages,
279.53 Kb

8550 SOT-23 PACKAGE br 8550 c br 8550 NPN MMBT8550D 8550 pnp transistor K 8550 c 8550 transistor MMBT8050C MMBT8050D MMBT8550C NPN 8550 s 8550 c 8550 sot-23 pnp 8550 8550 SOT-23 8550 NPN Transistor br 8550 NPN Transistor BR 8550 TEXT
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Abstract: applications. As complementary type the NPN transistor MMBT8050C MMBT8050C and MMBT8050D MMBT8050D are recommended. SOT , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , 4 10 ST 8550 ST 8550 5 5 2 -ICES 2 2 10 rthA 5 0.5 5 2 0.2 , Common emitter collector characteristics mA 500 ST 8550 1000 0.9 -V CE =1V 700 500 400 0.85 400 o 150 C 300 h FE ST 8550 200 b Tam oC =25 300 -IC ... Semtech Electronics
Original
datasheet

5 pages,
356.73 Kb

BR 8550 ic MMBT8050C ST 8550 8550 pnp transistor MMBT8050D npn 8550 8550 8550 SOT-23 PACKAGE MMBT8050 mmbt8550 8550 TRANSISTOR 8550 NPN Transistor MMBT8550C MMBT8050D ST br 8550 NPN Transistor MMBT8550D 8550 sot-23 pnp 8550 sot-23 BR 8550 TEXT
datasheet frame
Abstract: HN 8550 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications , groups, C and D, according to its DC current gain. As complementary type the NPN transistor HN 8050 is , of HQNEV TECHNOLOGY LTD. ) HN 8550 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit , HQNEV TECHNOLOGY LTD. ) SO 9 0 0 2 HN 8550 w Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case HN 8550 ... OCR Scan
datasheet

5 pages,
334 Kb

8550 pnp transistor 8550D transistor s 8550 c 8550 transistor transistor s 8550 PNP 8550 npn 8550 PNP transistor 8550 s 8550 transistors br 8550 NPN 8550 pnp h 8550 pnp transistor c 8550 transistor br 8550 c NPN Transistor BR 8550 transistor 8550 NPN Transistor br 8550 c BR 8550 D BR 8550 br 8550 NPN Transistor TEXT
datasheet frame
Abstract: 3K Q5 8550 Q7 R11 8550 150 Q9 9013 C13 104 Q6 Q8 R10 150 9013 R5 R12 , : www.silan.com.cn 5 R15 1K Q10 R19 690 9013 Q11 9013 R20 150 Q14 8550 Q12 8550 R18 , -2C Fosc=116~140 KHz MOD DC-DC ANTENNA C1 68p C3 12p Q1 Q2 8550 C1815 C1815 C2 27p L1 3.3H Q3 R1 L2 270 270 M R3 560 3.3F 180K C5 472 C7 8550 R2 C8 , 8 Right R18 220K C14 NPN C13 202 http: www.silan.com.cn Q7 9013 L4 R14 ... Silan Microelectronics
Original
datasheet

12 pages,
676.37 Kb

C 9013 DIP-16-300-2 IN4148 rx2c a C1815 equivalent rx 2b RX-2C DIP-14-300-2 tx 2b c1815 RX2C12 tx-2bs tx 2b rx 2b rx-2cs tx2b 2C128 NPN 9013 RX2C tx-2b TEXT
datasheet frame
Abstract: AA AAA BAT3 BAT4 AA AAA USB PWM USB · PWM PD0/PWM0 NPN (C945) PNP (2SB772 2SB772) PWM0 NPN PNP 5V PWM NPN PNP 5V 1N5819 1N5819 PWM Duty · USB 10 HT46RB50 HT46RB50 USB V+ 5V Vb Vb=R30/(R28+R30)*5=3/(1.5+3)*5=3.33V Ve 3.3V 8550 HT46RB50 HT46RB50 PA6 V+ 4V Vb Vb=R30/(R28+R30)*4=3/(1.5+3)*5=2.67V Ve 3.3V 8550 HT46RB50 HT46RB50 PA6 HT46RB50 HT46RB50 PA6 PWM LED · NPN 8050 PA1 4.3V NPN 8050 B-E Ibe=(4.3V-0.3V)/1K=4mA NPN 8050 =100 NPN 8050 C-E 400mA 1.2V NPN 8050 C-E ... Holtek
Original
datasheet

29 pages,
419.76 Kb

SKDIP48-pin 00281H 1N5819 2SB772 8050 npn C945 c945 npn C945 pin spec E001 ELTA R21R22R23R29 HT46RB50 pwm charger 001A1H 46RB50 npn 8050 0xE001 C5104 NPN C945 HA0133T TEXT
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Abstract: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor (To-92 Plastic Package) JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 2SC15-0 HN , 2SC266 2SC266 HN / BC 548 / 9014 2SC402 2SC402 HN / BC 547 / 8550 2SC18 2SC18 HN / BC 548 / 9014 2SC267 2SC267 HN / BC 548 / 9014 2SC403 2SC403 HN / BC 546 / 8550 2SC25 2SC25 HN / BC 546 / 9014 2SC268 2SC268 HN , / 9014 2SC427 2SC427 HN / BC 547 / 8550 2SC28 2SC28 HN / BC 547 / 9014 2SC282 2SC282 HN / BC 548 / 9014 ... Original
datasheet

1 pages,
58.1 Kb

547 TRANSISTOR equivalent transistor 8550 2SC103 equivalent of transistor 8050 9014 bc 548 transistor transistor 9014 transistor bc 548 npn transistors BC 548 2SC124 BC 547 transistor 9014 Transistor BC 9014 transistor bc 547 Transistor BC 548 2sC103 transistor equivalent of transistor 9014 NPN transistor 9014 NPN transistor 2sc124 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
! SIEMENS Small Signal Semiconductors ! BFP81 BFP81 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 6 V IC = 10 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.7636 -47.7 24.127 150.7 0.0188 -38.1 0.600 0.5937 -150.0 8.550 95.1 0.0450 40.0 0.4545 -38.3 0.700 0.5840 -157.9 7.422
/datasheets/files/siemens/ehdata/spar/bfp81/pa6v010m-v1.s2p
Siemens 09/08/1994 1.96 Kb S2P pa6v010m-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFR183 BFR183 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 0.75 V IC = 4.5 mA ! Common Emitter S-Parameters: May 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8256 -3.7 13.527 177.5 0.0033 -32.8 0.300 0.5549 -87.0 8.550 119.7 0.0673 54.2 0.6612 -35.3 0.400 0.4869 -105.9 7.092
/datasheets/files/infineon/ehdata/spar/bfr183/r5v754m5.s2p
Infineon 24/11/1997 2.78 Kb S2P r5v754m5.s2p
! SIEMENS Small Signal Semiconductors ! BF799 BF799 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 30 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.6128 -35.9 41.868 160.6 0.0036 0.6994 -9.5 0.150 0.5826 -158.6 8.550 92.7 0.0173 57.3 0.6838 -8.6 0.200 0.5871 -165.4
/datasheets/files/infineon/ehdata/spar/bf799/rt10v30m.s2p
Infineon 30/07/1997 2.38 Kb S2P rt10v30m.s2p
! SIEMENS Discrete & RF Semiconductors ! BFY183 BFY183 ! Si NPN RF Bipolar Junction Transistor in MICRO-X ! VCE = 8 V IC = 3 mA ! Common Emitter S-Parameters: May 1997 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8913 -2.0 9.571 178.7 0.0022 8.909 154.2 0.0389 68.2 0.9353 -16.8 0.250 0.8462 -50.0 8.550 148.7 0.0471 63.2 0.9087
/datasheets/files/infineon/ehdata/spar/bfy183/xe8v03m0.s2p
Infineon 16/05/1997 2.78 Kb S2P xe8v03m0.s2p
! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 4 V IC = 70 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.1721 -167.7 65.107 175.6 0.0024 0.6932 176.5 9.525 81.6 0.0353 59.3 0.4064 -158.2 1.000 0.6977 174.5 8.550 79.1 0.0382
/datasheets/files/infineon/ehdata/spar/bfy450/cy4v070m.s2p
Infineon 02/10/1996 2.79 Kb S2P cy4v070m.s2p
! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.25 V IC = 18 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.4126 -10.8 41.670 176.6 0.0024 0.600 0.7152 -164.6 9.937 91.4 0.0436 32.2 0.4649 -137.0 0.700 0.7235 -169.3 8.550 87.2
/datasheets/files/infineon/ehdata/spar/bfy450/cy1v218m.s2p
Infineon 02/10/1996 2.79 Kb S2P cy1v218m.s2p
! SIEMENS Small Signal Semiconductors ! BFG19S BFG19S ! Si NPN RF Bipolar Junction Transistor in SOT223 ! VCE = 3 V IC = 35 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.2624 -41.6 56.767 166.4 0.0044 -109.9 0.300 0.5789 -178.4 8.550 86.5 0.0473 62.8 0.1748 -116.7 0.400 0.5841 175.0 6.469
/datasheets/files/infineon/ehdata/spar/bfg19s/gh3v035m.s2p
Infineon 14/08/1996 2.78 Kb S2P gh3v035m.s2p
! SIEMENS Small Signal Semiconductors ! BFP280W BFP280W ! Si NPN RF Bipolar Junction Transistor in SOT343 ! VCE = 8 V IC = 3 mA ! Common Emitter S-Parameters: April 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9165 -1.0 8.474 176.6 0.0013 -3.1 8.550 177.2 0.0039 86.3 0.9904 -1.6 0.050 0.9155 -5.0 8.570 175.5 0.0068 87.3
/datasheets/files/siemens/ehdata/spar/bfp280w/x28v03m0.s2p
Siemens 09/08/1994 3 Kb S2P x28v03m0.s2p
! SIEMENS Small Signal Semiconductors ! BFP183 BFP183 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 1 V IC = 8 mA ! Common Emitter S-Parameters: March 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.7060 -5.1 21.281 177.3 0.0025 108.1 0.0515 40.0 0.5130 -48.0 0.500 0.5964 -143.2 8.550 100.8 0.0549 37.1 0.4480 -50.5
/datasheets/files/infineon/ehdata/spar/bfp183/p51v08m0.s2p
Infineon 29/09/1997 2.78 Kb S2P p51v08m0.s2p
! SIEMENS Small Signal Semiconductors ! BFY420 BFY420 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 4 V IC = 5 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8371 -1.4 15.488 179.6 0.0008 -105.7 8.550 106.2 0.0532 45.3 0.6485 -43.2 1.300 0.5769 -111.0 8.053 102.9 0.0551 43.8
/datasheets/files/infineon/ehdata/spar/bfy420/by4v05m0.s2p
Infineon 02/10/1996 2.78 Kb S2P by4v05m0.s2p