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HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS1-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16 visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil
HFA3101B96 Intersil Corporation 6 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SOIC-8 visit Intersil

npn+8550

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , /2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8550B , /2002 ST 8550 Admissible power dissipation versus ambient temperature Collector current versus , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , ST 8550 2 2 -ICES 2 10 3 10 0.5 5 5 0.2 2 2 0.1 10 2 Semtech Electronics
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8550E BR 8550 br 8550 NPN Transistor st8550d BR 8550 D st 8550d 8550 NPN Transistor 8550C 8550D
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , Code: 724) R Dated : 07/12/2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ , Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 8550 Admissible power dissipation , are kept at ambient temperature at a distance of 2 mm from case W 1 mA 3 10 ST 8550 ST 8550 o 25 C 5 o -50 C 2 0.8 10 2 o 150 C 5 Ptot -IC 0.6 Semtech Electronics
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ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c PNP 8550
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , Code: 724) Dated : 07/12/2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ , Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 8550 Admissible power dissipation , are kept at ambient temperature at a distance of 2 mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 o 150 C 5 Ptot -IC 0.6 Semtech Electronics
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s 8550 d s 8550 transistors 8550 br 8550 c NPN Transistor BR 8550 transistor K 8550
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , /2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8550B , : 07/12/2002 ST 8550 Admissible power dissipation versus ambient temperature Collector current , of 2 mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 , ST 8550 2 2 -ICES 2 10 0.5 5 3 10 5 0.2 2 2 0.1 10 2 Semtech Electronics
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br 8550 c c 8550 transistor transistors 8550 br 8550 NPN h 8550 pnp transistor 8550 pnp
Abstract: mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , 4 10 ST 8550 ST 8550 5 5 2 2 -ICES 2 10 rthA 5 0.5 5 2 0.2 , emitter collector characteristics mA 500 ST 8550 1000 ST 8550 0.9 -V CE =1V 0.85 700 , collector characteristics mA 500 mA 100 ST 8550 3.2 2V ST 8550 2.8 0.35 2.4 80 , ratio n voltage versus collecto r curren t V 0.5 S T 8550 MHz 10 3 typical lim its at Semtech Electronics
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MMBT8550C MMBT8550D MMBT8050C MMBT8050D 8550 SOT-23 8550 sot-23 pnp s 8550 c NPN 8550
Abstract: mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , 4 10 ST 8550 ST 8550 5 5 2 -ICES 2 2 10 rthA 5 0.5 5 2 0.2 , Common emitter collector characteristics mA 500 ST 8550 1000 0.9 -V CE =1V 700 500 400 0.85 400 o 150 C 300 h FE ST 8550 200 b Tam oC =25 300 -IC , m on em itter collector characteristics mA 500 mA 100 ST 8550 3.2 2V ST 8550 Semtech Electronics
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MMBT8050D ST mmbt8550 MMBT8050 8550 SOT-23 PACKAGE 8550st BR 8550 ic
Abstract: HN 8550 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications , of HQNEV TECHNOLOGY LTD. ) HN 8550 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit , HQNEV TECHNOLOGY LTD. ) SO 9 0 0 2 HN 8550 w Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case HN 8550 , °< 3 100 200 °C ^ Tamb Collector current versus base emitter voltage HN 8550 / 25 °C -
OCR Scan
transistor s 8550 8550D transistor
Abstract: 3K Q5 8550 Q7 R11 8550 150 Q9 9013 C13 104 Q6 Q8 R10 150 9013 R5 R12 , : www.silan.com.cn 5 R15 1K Q10 R19 690 9013 Q11 9013 R20 150 Q14 8550 Q12 8550 R18 , -2C Fosc=116~140 KHz MOD DC-DC ANTENNA C1 68p C3 12p Q1 Q2 8550 C1815 C2 27p L1 3.3H Q3 R1 L2 270 270 M R3 560 3.3F 180K C5 472 C7 8550 R2 C8 Silan Microelectronics
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DIP-16-300-2 DIP-14-300-2 tx-2b RX2C NPN 9013 2C128 tx2b RX2C12 DIP-14 DIP-16 RX-2C128KH 128KH
Abstract: Vb=R30/(R28+R30)*5=3/(1.5+3)*5=3.33V Ve 3.3V 8550 HT46RB50 PA6 V+ 4V Vb Vb=R30/(R28+R30)*4=3/(1.5+3)*5=2.67V Ve 3.3V 8550 HT46RB50 PA6 HT46RB50 PA6 PWM LED · NPN 8050 PA1 4.3V Holtek
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C5104 R21R22R23R29 46RB50 NPN C945 0xE001 npn 8050 001A1H HA0133T HT46RB5028- R25R26C16C17C18C19
Abstract: 2SC266 HN / BC 548 / 9014 2SC402 HN / BC 547 / 8550 2SC18 HN / BC 548 / 9014 2SC267 HN / BC 548 / 9014 2SC403 HN / BC 546 / 8550 2SC25 HN / BC 546 / 9014 2SC268 HN , / 9014 2SC427 HN / BC 547 / 8550 2SC28 HN / BC 547 / 9014 2SC282 HN / BC 548 / 9014 -
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2SC103 2SC337 2SC124 transistor 2sc124 transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 2SC15-0 2SC166 2SC376 2SC15-1 2SC167 2SC400
Abstract: ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 8550 (1.5A Semtech Electronics
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BR 8550D BR 8050 D BR 8050 transistor 8050 d transistor 8550D ic 8050
Abstract: ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 8550 (1.5A) Characteristics Semtech Electronics
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he 8550d transistor 8550D PNP 8050 pnp transistor 8050 TRANSISTOR PNP br 8550d NPN Transistor
Abstract: ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , ST 8550 (1.5A) Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 45 Semtech Electronics
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br 8550c NPN Transistor NPN transistor 8550d PNP transistor 8550d BR 8550C s 8550d
Abstract: Q4 9013 R9 690 C13 104 Q7 8550 R11 150 Q9 9013 SWITCH R12 Q8 9013 690 , C15 VI2 16 VO1 15 14 VI1 13 VDD 12 C9 104 Q5 8550 R10 150 Q3 9013 C12 104 , 150 Q12 8550 Q14 8550 Q10 9013 R17 140K Q11 9013 C17 104 Q15 9013 R21 , RIGHT R3 560 L2 R6 5.6K 6 C5 472 Q3 8550 R2 270 R1 270 C2 27p L1 3.3H Q2 8550 C3 12p Q1 C1815 C14 100F C15 0.01F 5 1.5V NPN NOTE: 1. MOD Unisonic Technologies
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complete of C1815 UTC 9013 sc 9013 RCR2C h 9013 NPN C 9013 QW-R502-026
Abstract: ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , ST 8550 (1.5A) Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 45 Semtech Electronics
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transistor S 8050
Abstract: ST 8550 (2A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/01/2005 ST 8550 (2A Semtech Electronics
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Abstract: ST 8550 (2A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 05/01/2005 ST 8550 (2A) Characteristics Semtech Electronics
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8050 transistor
Abstract: sensing distance 75.00 834-5566 E3F2-7C4* Thru-beam, DC, NPN, 7 m sensing distance 85.50 834-5548 Allied Electronics Catalog
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E3T-FD11 E3F2-R2C4 hyper LED diffuse reflective photoelectric sensor E3JU-25M4T-3 E3JU-D1M4-3 E3JU-D2M4-3 E3Z-T61 E3Z-R61 E3Z-D62 E39-R1 E3F2-DS10Z1N E3F2-DS10Z2N
Abstract: 69.00 Red LED NPN 2m NPB 85.50 Infrared LED NPN 7m Plastic 88.50 Infrared LED NPN 7m NPB Mouser Catalog
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653-E39-RSB E39-RSA E39-RSB E39-L69 OMRON PHOTOELECTRIC SWITCH AMPLIFIER omron E3F2R2Z2 E3F2-R2Z2 E3F2-DS10C4-N 10-30VDC 653-E3F2-DS1N 653-E3F2-DS2N 653-E3F2-R2Z1 653-E3F2-R2Z2 653-E3F2-3Z1
Abstract: FORWARD INTERNATIONAL ELBCTKONICS LID. SEMICONDUCTOR TECHNIC AL DATA 8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to 8550 * Collector Current: Ic=1500mA * Collector Dissipation: Pc=lW(Ta=25°C) ABSOLUTE MAXIMUM RATINGS at TairfW5°C Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 40 V Collector-Emitter Voltage Vceo 25 V Emitter-Base Voltage Vebo 6 V Collector Current fc 1500 mA Collector -
OCR Scan
8050 NPN transistor 8050 transistor 8550 transistor b 8050 TRANSISTOR c 8050
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