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Part Manufacturer Description PDF & SAMPLES
8550401EA Texas Instruments 3-Line To 8-Line Decoders/Demultiplexers 16-CDIP -55 to 125
8550401FA Texas Instruments 3-Line To 8-Line Decoders/Demultiplexers 16-CFP -55 to 125
85504012A Texas Instruments 3-Line To 8-Line Decoders/Demultiplexers 20-LCCC -55 to 125
85505012A Texas Instruments Octal Buffers And Line Drivers CMOS Logic With 3-State Outputs 20-LCCC -55 to 125
8550501RA Texas Instruments Octal Buffers And Line Drivers CMOS Logic With 3-State Outputs 20-CDIP -55 to 125
85506012A Texas Instruments Octal Bus Transceivers With 3-State Outputs 20-LCCC -55 to 125

npn 8550

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , /2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8550B , /2002 ST 8550 Admissible power dissipation versus ambient temperature Collector current versus , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 Semtech Electronics
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8550E BR 8550 br 8550 NPN Transistor st8550d BR 8550 D st 8550d 8550 NPN Transistor 8550C 8550D
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , Code: 724) R Dated : 07/12/2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ , Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 8550 Admissible power dissipation , are kept at ambient temperature at a distance of 2 mm from case W 1 mA 3 10 ST 8550 Semtech Electronics
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ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c PNP 8550
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , Code: 724) Dated : 07/12/2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ , Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 8550 Admissible power dissipation , are kept at ambient temperature at a distance of 2 mm from case W 1 mA 3 10 ST 8550 Semtech Electronics
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s 8550 d s 8550 transistors 8550 br 8550 c NPN Transistor BR 8550 transistor K 8550
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , /2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8550B , : 07/12/2002 ST 8550 Admissible power dissipation versus ambient temperature Collector current , of 2 mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 Semtech Electronics
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br 8550 c c 8550 transistor transistors 8550 br 8550 NPN h 8550 pnp transistor 8550 pnp
Abstract: applications. As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended. SOT , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , 4 10 ST 8550 ST 8550 5 5 2 2 -ICES 2 10 rthA 5 0.5 5 2 0.2 , emitter collector characteristics mA 500 ST 8550 1000 ST 8550 0.9 -V CE =1V 0.85 700 , collector characteristics mA 500 mA 100 ST 8550 3.2 2V ST 8550 2.8 0.35 2.4 80 Semtech Electronics
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MMBT8550C MMBT8550D 8550 SOT-23 8550 sot-23 pnp s 8550 c st8550
Abstract: applications. As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended. SOT , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , 4 10 ST 8550 ST 8550 5 5 2 -ICES 2 2 10 rthA 5 0.5 5 2 0.2 , Common emitter collector characteristics mA 500 ST 8550 1000 0.9 -V CE =1V 700 500 400 0.85 400 o 150 C 300 h FE ST 8550 200 b Tam oC =25 300 -IC Semtech Electronics
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MMBT8050D ST mmbt8550 MMBT8050 8550 SOT-23 PACKAGE 8550st BR 8550 ic
Abstract: HN 8550 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications , groups, C and D, according to its DC current gain. As complementary type the NPN transistor HN 8050 is , of HQNEV TECHNOLOGY LTD. ) HN 8550 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit , HQNEV TECHNOLOGY LTD. ) SO 9 0 0 2 HN 8550 w Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case HN 8550 -
OCR Scan
transistor s 8550 8550D transistor
Abstract: 3K Q5 8550 Q7 R11 8550 150 Q9 9013 C13 104 Q6 Q8 R10 150 9013 R5 R12 , : www.silan.com.cn 5 R15 1K Q10 R19 690 9013 Q11 9013 R20 150 Q14 8550 Q12 8550 R18 , -2C Fosc=116~140 KHz MOD DC-DC ANTENNA C1 68p C3 12p Q1 Q2 8550 C1815 C2 27p L1 3.3H Q3 R1 L2 270 270 M R3 560 3.3F 180K C5 472 C7 8550 R2 C8 , 8 Right R18 220K C14 NPN C13 202 http: www.silan.com.cn Q7 9013 L4 R14 Silan Microelectronics
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DIP-16-300-2 DIP-14-300-2 tx-2b RX2C NPN 9013 2C128 tx2b RX2C12 DIP-14 DIP-16 RX-2C128KH 128KH
Abstract: AA AAA BAT3 BAT4 AA AAA USB PWM USB · PWM PD0/PWM0 NPN (C945) PNP (2SB772) PWM0 NPN PNP 5V PWM NPN PNP 5V 1N5819 PWM Duty · USB 10 HT46RB50 USB V+ 5V Vb Vb=R30/(R28+R30)*5=3/(1.5+3)*5=3.33V Ve 3.3V 8550 HT46RB50 PA6 V+ 4V Vb Vb=R30/(R28+R30)*4=3/(1.5+3)*5=2.67V Ve 3.3V 8550 HT46RB50 PA6 HT46RB50 PA6 PWM LED · NPN 8050 PA1 4.3V NPN 8050 B-E Ibe=(4.3V-0.3V)/1K=4mA NPN 8050 =100 NPN 8050 C-E 400mA 1.2V NPN 8050 C-E Holtek
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C5104 R21R22R23R29 46RB50 NPN C945 0xE001 npn 8050 001A1H HA0133T HT46RB5028- R25R26C16C17C18C19
Abstract: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor (To-92 Plastic Package) JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 HN , 2SC266 HN / BC 548 / 9014 2SC402 HN / BC 547 / 8550 2SC18 HN / BC 548 / 9014 2SC267 HN / BC 548 / 9014 2SC403 HN / BC 546 / 8550 2SC25 HN / BC 546 / 9014 2SC268 HN , / 9014 2SC427 HN / BC 547 / 8550 2SC28 HN / BC 547 / 9014 2SC282 HN / BC 548 / 9014 -
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2SC103 2SC337 2SC124 transistor 2sc124 transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 2SC166 2SC376 2SC15-1 2SC167 2SC400 2SC16
Abstract: ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 8550 (1.5A Semtech Electronics
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BR 8550D BR 8050 D BR 8050 transistor 8050 d transistor 8550D ic 8050
Abstract: ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 8550 (1.5A) Characteristics Semtech Electronics
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he 8550d transistor 8550D PNP 8050 pnp transistor 8050 TRANSISTOR PNP br 8550d NPN Transistor
Abstract: ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , ST 8550 (1.5A) Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 45 Semtech Electronics
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br 8550c NPN Transistor NPN transistor 8550d PNP transistor 8550d BR 8550C s 8550d
Abstract: RIGHT R3 560 L2 R6 5.6K 6 C5 472 Q3 8550 R2 270 R1 270 C2 27p L1 3.3H Q2 8550 C3 12p Q1 C1815 C14 100F C15 0.01F 5 1.5V NPN NOTE: 1. MOD , Q4 9013 R9 690 C13 104 Q7 8550 R11 150 Q9 9013 SWITCH R12 Q8 9013 690 , C15 VI2 16 VO1 15 14 VI1 13 VDD 12 C9 104 Q5 8550 R10 150 Q3 9013 C12 104 , 150 Q12 8550 Q14 8550 Q10 9013 R17 140K Q11 9013 C17 104 Q15 9013 R21 Unisonic Technologies
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complete of C1815 UTC 9013 sc 9013 RCR2C h 9013 NPN C 9013 QW-R502-026
Abstract: ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , ST 8550 (1.5A) Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 45 Semtech Electronics
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transistor S 8050
Abstract: ST 8550 (2A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/01/2005 ST 8550 (2A Semtech Electronics
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Abstract: ST 8550 (2A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 05/01/2005 ST 8550 (2A) Characteristics Semtech Electronics
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8050 transistor
Abstract: sensing distance 75.00 834-5566 E3F2-7C4* Thru-beam, DC, NPN, 7 m sensing distance 85.50 834-5548 , operation, NPN or PNP models available, 2 m prewired cable, IP67 enclosure rating. Stock Mfr.'s Description EACH 4 No. Type 834-5550 E3Z-T61 Thru-beam, NPN, 15 m sensing distance 102.00 834-5551 E3Z-R61 Retro-reflective, NPN, 3 m sensing distance 81.50 18 mm cylindrical photoelectric sensor, wide operating voltage 10-30 VDC or 24-240 VAC, light- 834-5552 E3Z-D62 Diffuse, NPN, 1 m sensing distance 71.05 ON/dark-ON Allied Electronics Catalog
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E3T-FD11 E3F2-R2C4 hyper LED diffuse reflective photoelectric sensor E3JU-25M4T-3 E3JU-D1M4-3 E3JU-D2M4-3 E39-R1 E3F2-DS10Z1N E3F2-DS10Z2N E3F2-DS10C4-N E3S-CT11 E3T-ST12
Abstract: NPN 10 cm Plastic 67.00 Infrared LED NPN 10 cm NPB 59.00 Infrared LED NPN 2m Plastic 69.00 Red LED NPN 2m NPB 85.50 Infrared LED NPN 7m Plastic 88.50 Infrared LED NPN 7m NPB , LED NPN/PNP 500 mm - 10 m Infrared LED NPN/PNP 200 mm - 2 m Description Reflector, 100mm-6m , 653-E3S-AT11 E3S-AT11 Through-beam Horizontal NPN 0-7m Pre-wired 153.44 653-E3S-AT61 E3S-AT61 Through-beam Vertical NPN 0-7m Pre-wired 153.44 653-E3S-AR11 E3S-AR11 Retroreflective Horizontal NPN Mouser Catalog
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653-E39-RSB E39-RSA E39-RSB E39-L69 OMRON PHOTOELECTRIC SWITCH AMPLIFIER omron E3F2R2Z2 E3F2-R2Z2 OMRON E3S-AT11 10-30VDC 653-E3F2-DS1N 653-E3F2-DS2N 653-E3F2-R2Z1 653-E3F2-R2Z2 653-E3F2-3Z1
Abstract: FORWARD INTERNATIONAL ELBCTKONICS LID. SEMICONDUCTOR TECHNIC AL DATA 8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to 8550 * Collector Current: Ic=1500mA * Collector Dissipation: Pc=lW(Ta=25°C) ABSOLUTE MAXIMUM RATINGS at TairfW5°C Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 40 V Collector-Emitter Voltage Vceo 25 V Emitter-Base Voltage Vebo 6 V Collector Current fc 1500 mA Collector -
OCR Scan
8050 NPN transistor 8050 transistor 8550 transistor b 8050 TRANSISTOR c 8050
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