NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

npn 8550

Catalog Datasheet Results Type PDF Document Tags
Abstract: HN 8550 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. , groups, C and D, according to its DC current gain. As complementary type the NPN transistor HN 8050 is , HQNEV TECHNOLOGY LTD. ) HN 8550 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit DC , TECHNOLOGY LTD. ) SO 9 0 0 2 HN 8550 w Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case HN 8550 1 P ... OCR Scan
datasheet

5 pages,
334 Kb

8550c BR 8550D PNP transistor 8550 s 8550 c 8550 pnp transistor PNP 8550 br 8550 NPN transistor s 8550 npn 8550 h 8550 pnp transistor c 8550 transistor 8550 pnp s 8550 transistors datasheet abstract
datasheet frame
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , /2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8550B 8550B , : 07/12/2002 ST 8550 Admissible power dissipation versus ambient temperature Collector current , of 2 mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 ... Original
datasheet

5 pages,
296.39 Kb

NPN 8550 transistor 8550 BR 8550 ic 8550 pnp transistor 8550 PNP 8550 PNP transistor 8550 h 8550 pnp transistor c 8550 transistor BR 8550 transistor ST 8550 8550b br 8550 c datasheet abstract
datasheet frame
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , /2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8550B 8550B , /2002 ST 8550 Admissible power dissipation versus ambient temperature Collector current versus , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 ... Original
datasheet

5 pages,
303.11 Kb

K 8550 8550 transistor transistor 8550 br 8550 c NPN Transistor PNP 8550 8550B br 8550 c BR 8550 transistor BR 8550 ic 8550 pnp transistor PNP transistor 8550 NPN 8550 st 8550 datasheet abstract
datasheet frame
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , Code: 724) Dated : 07/12/2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. , Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 8550 Admissible power dissipation versus , kept at ambient temperature at a distance of 2 mm from case W 1 mA 3 10 ST 8550 ST ... Original
datasheet

5 pages,
413.14 Kb

BR 8050 D BR 8050 transistor s 8550 ST 8550 BR 8550 transistor 8550 pnp transistor st 8050 S 8550 transistor 8550 NPN Transistor st 8550d s 8550 transistors 8550 br 8550 c NPN Transistor datasheet abstract
datasheet frame
Abstract: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. , four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN , Code: 724) R Dated : 07/12/2002 ST 8550 Characteristics at Tamb=25 OC Symbol Min. Typ. , Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 8550 Admissible power dissipation versus , kept at ambient temperature at a distance of 2 mm from case W 1 mA 3 10 ST 8550 ST ... Original
datasheet

5 pages,
342.37 Kb

BR 8050 8550d 8550 NPN Transistor 8550 s 8550 d 8550b 8550 transistor PNP 8550 npn 8550 S 8550 transistor st 8050 PNP transistor 8550 8550 pnp transistor ST 8550 datasheet abstract
datasheet frame
Abstract: applications. As complementary type the NPN transistor MMBT8050C MMBT8050C and MMBT8050D MMBT8050D are recommended. SOT-23 , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , 4 10 ST 8550 ST 8550 5 5 2 -ICES 2 2 10 rthA 5 0.5 5 2 0.2 , Common emitter collector characteristics mA 500 ST 8550 1000 0.9 -V CE =1V 700 500 400 0.85 400 o 150 C 300 h FE ST 8550 200 b Tam oC =25 300 -IC ... Original
datasheet

5 pages,
356.73 Kb

8550 pnp transistor 8550 pnp MMBT8050C MMBT8050D ST 8550 8550 MMBT8050 mmbt8550 MMBT8550D 8550 SOT-23 PACKAGE npn 8550 br 8550 NPN Transistor 8550 NPN Transistor MMBT8050D ST MMBT8550C MMBT8550D MMBT8550C abstract
datasheet frame
Abstract: applications. As complementary type the NPN transistor MMBT8050C MMBT8050C and MMBT8050D MMBT8050D are recommended. SOT-23 , mm from case W 1 mA 3 10 ST 8550 ST 8550 25 oC 5 o -50 C 2 0.8 10 2 , 4 10 ST 8550 ST 8550 5 5 2 2 -ICES 2 10 rthA 5 0.5 5 2 0.2 , emitter collector characteristics mA 500 ST 8550 1000 ST 8550 0.9 -V CE =1V 0.85 700 , collector characteristics mA 500 mA 100 ST 8550 3.2 2V ST 8550 2.8 0.35 2.4 80 ... Original
datasheet

5 pages,
279.53 Kb

8550 pnp transistor 8550 SOT-23 PACKAGE MMBT8550D K 8550 c 8550 transistor MMBT8050C MMBT8050D MMBT8550C s 8550 c NPN 8550 8550 sot-23 pnp 8550 8550 SOT-23 MMBT8550C abstract
datasheet frame
Abstract: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor (To-92 Plastic Package) JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 2SC15-0 HN , 2SC266 2SC266 HN / BC 548 / 9014 2SC402 2SC402 HN / BC 547 / 8550 2SC18 2SC18 HN / BC 548 / 9014 2SC267 2SC267 HN / BC 548 / 9014 2SC403 2SC403 HN / BC 546 / 8550 2SC25 2SC25 HN / BC 546 / 9014 2SC268 2SC268 HN , / 9014 2SC427 2SC427 HN / BC 547 / 8550 2SC28 2SC28 HN / BC 547 / 9014 2SC282 2SC282 HN / BC 548 / 9014 ... Original
datasheet

1 pages,
58.1 Kb

pdf 2sc372 data sheet transistor 9014 2SC103 2SC337 547 TRANSISTOR equivalent of transistor 8050 9014 bc 548 transistor BC 9014 2SC124 BC 547 transistor transistors BC 548 transistor 9014 2SC15-0 2SC15-1 2SC15-0 abstract
datasheet frame
Abstract: 3K Q5 8550 Q7 R11 8550 150 Q9 9013 C13 104 Q6 Q8 R10 150 9013 R5 R12 , : www.silan.com.cn 5 R15 1K Q10 R19 690 9013 Q11 9013 R20 150 Q14 8550 Q12 8550 R18 , RX-2C Fosc=116~140 KHz MOD DC-DC ANTENNA C1 68p C3 12p Q1 Q2 8550 C1815 C1815 C2 27p L1 3.3H Q3 R1 L2 270 270 M R3 560 3.3F 180K C5 472 C7 8550 R2 , 5 7 8 Right R18 220K C14 NPN C13 202 http: www.silan.com.cn Q7 9013 ... Original
datasheet

12 pages,
676.37 Kb

128KHz DIP-16-300-2 rx2c a RX2C12 tx 2b tx 2b rx 2b C 9013 2C128 IN4148 C1815 equivalent rx-2cs tx-2bs c1815 tx2b NPN 9013 DIP-14 DIP-14 abstract
datasheet frame
Abstract: sensing distance 75.00 834-5566 E3F2-7C4* Thru-beam, DC, NPN, 7 m sensing distance 85.50 834-5548 , operation, NPN or PNP models available, 2 m prewired cable, IP67 enclosure rating. Stock Mfr.'s Description EACH 4 No. Type 834-5550 E3Z-T61 E3Z-T61 Thru-beam, NPN, 15 m sensing distance 102.00 834-5551 E3Z-R61 E3Z-R61 Retro-reflective, NPN, 3 m sensing distance 81.50 18 mm cylindrical photoelectric sensor, wide operating voltage 10-30 VDC or 24-240 VAC, light- 834-5552 E3Z-D62 E3Z-D62 Diffuse, NPN, 1 m sensing distance 71.05 ON/dark-ON ... Original
datasheet

1 pages,
96.44 Kb

E3T-FD11 E3JU-R5M4-3 E3JU-25M4T-3 diffuse reflective photoelectric sensor hyper LED E3F2-R2C4 datasheet abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
No abstract text available
www.datasheetarchive.com/download/29686886-145335ZC/bf799.zip (RT10V30M.S2P)
Infineon 08/09/2000 355.23 Kb ZIP bf799.zip
! SIEMENS Small Signal Semiconductors ! BF799 BF799 BF799 BF799 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 30 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.6128 -35.9 41.868 160.6 0.0036 76.7 0.9644 0.150 0.5826 -158.6 8.550 92.7 0.0173 57.3 0.6838 -8.6 0.200 0.5871 -165.4 6.452 87.0
www.datasheetarchive.com/files/infineon/ehdata/spar/bf799/rt10v30m.s2p
Infineon 30/07/1997 2.38 Kb S2P rt10v30m.s2p
! SIEMENS Small Signal Semiconductors ! BFP81 BFP81 BFP81 BFP81 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 6 V IC = 10 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.7636 -47.7 24.127 150.7 0.0188 67.6 0.600 0.5937 -150.0 8.550 95.1 0.0450 40.0 0.4545 -38.3 0.700 0.5840 -157.9 7.422 90.3
www.datasheetarchive.com/files/siemens/ehdata/spar/bfp81/pa6v010m-v1.s2p
Siemens 09/08/1994 1.96 Kb S2P pa6v010m-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFG19S BFG19S BFG19S BFG19S ! Si NPN RF Bipolar Junction Transistor in SOT223 ! VCE = 1.5 V IC = 2.5 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8884 -8.3 8.550 174.8 0.0096 86.7 0.9940 -3.5 0.020 0.8825 -16.8 8.452 170.6 0.0192 83.3 0.9807 -7.0 0.050 0.8590 -40.7
www.datasheetarchive.com/files/infineon/ehdata/spar/bfg19s/gh1v52m5.s2p
Infineon 14/08/1996 2.78 Kb S2P gh1v52m5.s2p
! SIEMENS Small Signal Semiconductors ! BFG19S BFG19S BFG19S BFG19S ! Si NPN RF Bipolar Junction Transistor in SOT223 ! VCE = 3 V IC = 35 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.2624 -41.6 56.767 166.4 0.0044 81.5 0.300 0.5789 -178.4 8.550 86.5 0.0473 62.8 0.1748 -116.7 0.400 0.5841 175.0 6.469 80.6
www.datasheetarchive.com/files/infineon/ehdata/spar/bfg19s/gh3v035m.s2p
Infineon 14/08/1996 2.78 Kb S2P gh3v035m.s2p
No abstract text available
www.datasheetarchive.com/download/74352717-145356ZC/bfp183.zip (P51V08M0.S2P)
Infineon 08/09/2000 398.81 Kb ZIP bfp183.zip
No abstract text available
www.datasheetarchive.com/download/37573367-145347ZC/bfg19s.zip (GH1V52M5.S2P)
Infineon 08/09/2000 438.5 Kb ZIP bfg19s.zip
No abstract text available
www.datasheetarchive.com/download/37573367-145347ZC/bfg19s.zip (GH3V035M.S2P)
Infineon 08/09/2000 438.5 Kb ZIP bfg19s.zip
! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.25 V IC = 18 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.4126 -10.8 41.670 176.6 0.0024 86.6 0.7152 -164.6 9.937 91.4 0.0436 32.2 0.4649 -137.0 0.700 0.7235 -169.3 8.550 87.2 0.0447
www.datasheetarchive.com/files/infineon/ehdata/spar/bfy450/cy1v218m.s2p
Infineon 02/10/1996 2.79 Kb S2P cy1v218m.s2p
! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 4 V IC = 70 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.1721 -167.7 65.107 175.6 0.0024 33.8 176.5 9.525 81.6 0.0353 59.3 0.4064 -158.2 1.000 0.6977 174.5 8.550 79.1 0.0382 60.7
www.datasheetarchive.com/files/infineon/ehdata/spar/bfy450/cy4v070m.s2p
Infineon 02/10/1996 2.79 Kb S2P cy4v070m.s2p