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npn zg

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or , Product specification NPN 2 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER , = 25 "C; Zg = 60 ii; R l = 920 £2 F noise figure lc = 2 mA; VCE = 5 V; f = 100 MHz; Tamb " 25 °C; Zg = 60 Q lc = 2 mA; VCE = 5 V; f = 200 MHz; Tamb = 25 °C; Zg = 60 Q - September 1995 95 ... OCR Scan
datasheet

2 pages,
70.63 Kb

zg transistor F689K BF689 transistor zg TEXT
datasheet frame
Abstract: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION NPN , lc = 2 mA; V CE = 5 V; f = 800 MHz; Tamb = 25 °C; Zg = 60 Q; b§ = opt. - MIN. - TYP. MAX , 2 TllOfiEb 00^5463 175 Philips Semiconductors Product specification NPN 3 GHz , V; f = 800 MHz; Tamb = 25 °C lc = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C; Zg -60 £2; b§ = opt , specification NPN 3 GHz wideband transistor BFG17A BFG17A 1.5 nF (1) (2) L1 = L3 = 5 nH Ferroxcube choke ... OCR Scan
datasheet

7 pages,
353.57 Kb

TRANSISTOR 610 smd SMD Transistor zG npn zg transistor smd zG TEXT
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Abstract: . Simply enclose the range to be measured with the box. The ZG automatically optimizes the sensing , Conventional model ZG More than 30 times faster 100 ms The response time required from receiving , center ± measurement range) Conveying Measuring the end of warped panels ZG Series Sensor , , with the Sensor being used as a wide displacement gauge. ZG Series The end of warped panels can , at the desired timing. Conventional model ZG It was not possible to designate the timing ... OMRON
Original
datasheet

17 pages,
5053.73 Kb

ZG-WDS22 ZG-WDC41 ZG-RPD41 omron plc OMRON CPU 21 IEC608251 30 pin flex cable lcd zg 90 zinc high resolution reflective omron TEXT
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Abstract: Philips Semiconductors b b 53^31 QQ31S QQ31S R T bSQ MAPX Product specification NPN 8 , PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the , GHz; E Tmb = 25°C 8 - dB F noise figure lc = 15 mA; VC = 8 V; Zg = opt.; E f= 1 , Product specification NPN 8 G H z wideband transistor BFQ65 BFQ65 N AMER PHILIPS/DISCRETE b'lE D , = 8 V; Zg = opt.; E f= 1 G H z ;T a b= 25°C m dB lc = 5 mA; VC = 8 V; Zs = opt.; E f = ... OCR Scan
datasheet

7 pages,
252.24 Kb

QQ31S TEXT
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Abstract: Head in the ZG Series is in Japanese. Replace it with the English label that comes with the product , cross-sectional area. Simply enclose the range to be measured with the box. The ZG automatically optimizes , object Shape profile data Conventional model ZG · The wide beam allows vehicle structural , ZG Series Through-beam measurement sensor Incident light Reflectivity varies Note , the end of warped panels ZG Series Reference plane High Image obtained from ordinary ... OMRON
Original
datasheet

9 pages,
1822.93 Kb

ZS-XPT2 transistor zg airbag ZG-RPD41 ZG-WDS22 CLASS II LASER 21cfr EN60825-1 ZG-WDC41 TEXT
datasheet frame
Abstract: , or to the source driving the negative input, will be called ZG rather than Z1 or ZI, because this , impedance loads. NON-INVERTING INPUT + ZOUT ZB - VTI ZG VOUT = VTO ZB I1 Z , UT GO (1+ZB/ZF|ZG) (EQ. 13) Dividing Equation 11 by Equation 13 yields Equation 14 , ZF VIN + G=1 APPLY TEST SIGNAL (VTI) HERE ZG + VOUT ZB - IZ I G , previously mentioned reasons. ZG ZF VX FIGURE 6. NON-INVERTING CIRCUIT DIAGRAM (EQ. 15) VX = ... Intersil
Original
datasheet

7 pages,
82.39 Kb

Mancini HFA1120 HA5020 HA2841 cf g1 rc AN9420 AN9415 Mancini* CFA TEXT
datasheet frame
Abstract: SSC D ■ fl235bDS OOOMbTO 2 ■SIE6 ;i NPN Silicon Transistor for Low-Noise BFR 34 A RF Broadband Amplifiers _2 N 6620 - - - - . -0 D _/5- SIEMENS AKTIEN6ESELLSCHAF ' BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 (50 B 3 DIN 41 867) intended for use in RF amplifiers up to the GHz range, e. g. for low-noise input stages , 10 V; f = 2 GHz; Zg = Zg opt) Power gain (/c = 15 mA; VCE = 6 V; f = 800 MHz; flg = 60 £3) Output ... OCR Scan
datasheet

4 pages,
90.87 Kb

2N6620 2SC 691 bfr34 Q62702-F346-S1 Transistor BFR 38 TRANSISTOR 2SC 169 6620 BFR34A tfc 718 TFC 718 S Transistor BFR 96 Transistor BFr 99 TEXT
datasheet frame
Abstract: , or to the source driving the negative input, will be called ZG rather than Z1 or ZI, because this , impedance loads. NON-INVERTING INPUT + ZOUT ZB - VTI ZG VOUT = VTO ZB I1 Z , UT GO (1+ZB/ZF|ZG) (EQ. 13) Dividing Equation 11 by Equation 13 yields Equation 14 , ZF VIN + G=1 APPLY TEST SIGNAL (VTI) HERE ZG + VOUT ZB - IZ I G , previously mentioned reasons. ZG ZF VX FIGURE 6. NON-INVERTING CIRCUIT DIAGRAM (EQ. 15) VX = ... Intersil
Original
datasheet

7 pages,
82 Kb

Mancini* CFA Mancini HFA1120 HA5020 HA2841 AN9420.1 AN9420 AN9415 TEXT
datasheet frame
Abstract: Y BFP193T/BFP193TW/BFP193TRW BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high , V ce = 8 V, lc = 10 mA, Zg = Zsopt> Z L = 50 Q, f = 900 MHz V ce = 8 V, lc = 10 mA, Zg = Zsopt> Z L = 50 Q, f = 2 GHz Power gain V ce = 8 V, lc = 30 mA, Zg = Zsopt> Z L = 50 Q, f = 900 MHz V ce = 8 V, lc = 30 mA, Zg = Zsopt> Z L = 50 Q, f = 2 GHz Transducer gain V Ce = 8 V, lc = 30 mA, Z0 = 50 Q, f = ... OCR Scan
datasheet

6 pages,
163.69 Kb

marking z0 sot -6 transistor marking zg BFP193T/BFP193TW/BFP193TRW TEXT
datasheet frame
Abstract: SIEMENS NPN Silicon RF Transistor · For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA · = 7.5GHz F = 1.5dB at 900MHz BFR 280 ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking , capacitance l/EB = 0.5 V, f= 1 MHz Noise figure Iq = 1.5 mA, Vce = 5 V, Zg = Zg,^ /= 900 MHz f = 1.8 GHz Power , Intercept Point /P 3= /(/c) (3rd order, Output, Zg=2|_=50ii) V'ce = Parameter, f= 900MHz f= Parameter ... OCR Scan
datasheet

7 pages,
156.11 Kb

ZG SOT23 transistor marking zg sot-23 Transistor MARKING CODE ZG TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
1 4 ZR DG 6 3 ZG .MODEL ZF D (IS=.64F IBV=10N BV=25 RS=75MEG 75MEG) .MODEL ZR D (IS=.64F IBV=10N BV=33.3) .MODEL ZG D (IS=.64F IBV=10N BV=5) .MODEL POUT PNP (IS=640F BF=1 CJE=2.41N TF=179N TR=34U) .MODEL NOUT NPN (IS=640F BF=100 RE=.181 RC=.181 + CJE=2.41N CJC=482P TF=179N TR=34U) .ENDS NOUT NPN (IS=200F BF=100 RC=.4 CJE=293P + CJC=58.6P TF=44.7N TR=6.37U) .ENDS CJE=268P) .MODEL NOUT NPN (IS=640F BF=100 RC=.375 + CJE=268P CJC=53.6P TF=80.1N TR=25.5U) .ENDS
/datasheets/files/spicemodels/misc/modelos/spice_complete/scr.lib
Spice Models 18/04/2010 52.25 Kb LIB scr.lib
hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a MSC82040 MSC82040 3/6 V CE = 18 V I C = 100 mA Zg = 50 ohms TYPICAL S - PARAMETERS MSC82040 MSC82040 4/6 PACKAGE MECHANICAL
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2760-v1.htm
STMicroelectronics 02/04/1999 4.13 Kb HTM 2760-v1.htm
hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically OPERATION TYPICAL LINEAR GAIN vs COLLECTOR CURRENT MSC80197 MSC80197 3/6 V CE = 18 V I C = mA Zg = 50 ohms TYPICAL S
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2725-v2.htm
STMicroelectronics 14/06/1999 4.03 Kb HTM 2725-v2.htm
MSC82100 MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry TYPICAL LINEAR GAIN vs COLLECTOR CURRENT MSC82100 MSC82100 3/6 V CE = 18 V I C = 100 mA Zg = 50 ohms
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2761-v3.htm
STMicroelectronics 25/05/2000 5.94 Kb HTM 2761-v3.htm
MSC80195 MSC80195 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device /6 V CE = 18 V I C = 140mA Zg = 50 ohms TYPICAL S - PARAMETERS MSC80195 MSC80195 4/6 PACKAGE
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2723-v3.htm
STMicroelectronics 25/05/2000 5.86 Kb HTM 2723-v3.htm
27 dBm MIN. @ 1.0 GHz DESCRIPTION The MSC82100 MSC82100 is a hermetically sealed NPN power transistor with a FORWARD BIAS OPERATION TYPICAL LINEAR GAIN vs COLLECTOR CURRENT MSC82100 MSC82100 3/6 V CE = 18 V I C = 100 mA Zg =
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2761.htm
STMicroelectronics 20/10/2000 6.18 Kb HTM 2761.htm
hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a MSC82100 MSC82100 3/6 V CE = 18 V I C = 100 mA Zg = 50 ohms TYPICAL S - PARAMETERS MSC82100 MSC82100 4/6 PACKAGE MECHANICAL
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2761-v1.htm
STMicroelectronics 02/04/1999 4.13 Kb HTM 2761-v1.htm
hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically OPERATION TYPICAL LINEAR GAIN vs COLLECTOR CURRENT MSC80195 MSC80195 3/6 V CE = 18 V I C = 140mA Zg = 50 ohms TYPICAL
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2723-v1.htm
STMicroelectronics 02/04/1999 4.04 Kb HTM 2723-v1.htm
sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for vs COLLECTOR CURRENT MSC80196 MSC80196 3/6 V CE = 18 V I C = 220 mA Zg = 50 ohms TYPICAL S - PARAMETERS
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2724-v2.htm
STMicroelectronics 14/06/1999 4.01 Kb HTM 2724-v2.htm
OUT = 28 dBm MIN. @ 2.0 GHz DESCRIPTION The MSC80185 MSC80185 is a hermetically sealed NPN power transistor CE = 18 V I C = 140 mA Zg = 50 ohms TYPICAL S - PARAMETERS MSC80185 MSC80185 4/6 PACKAGE MECHANICAL DATA All
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2721.htm
STMicroelectronics 20/10/2000 6.1 Kb HTM 2721.htm