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TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 ri Buy
HFA3102Y Intersil Corporation TRANSISTOR 2 CHANNEL, C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-14, BIP RF Small Signal ri Buy
HFA3046Y Intersil Corporation TRANSISTOR 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal ri Buy

npn zg

Catalog Datasheet Results Type PDF Document Tags
Abstract: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or , Product specification NPN 2 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER , = 25 "C; Zg = 60 ii; R l = 920 £2 F noise figure lc = 2 mA; VCE = 5 V; f = 100 MHz; Tamb " 25 °C; Zg = 60 Q lc = 2 mA; VCE = 5 V; f = 200 MHz; Tamb = 25 °C; Zg = 60 Q - September 1995 95 ... OCR Scan
datasheet

2 pages,
70.63 Kb

transistor zg datasheet abstract
datasheet frame
Abstract: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION NPN , lc = 2 mA; V CE = 5 V; f = 800 MHz; Tamb = 25 °C; Zg = 60 Q; b§ = opt. - MIN. - TYP. MAX. , 2 TllOfiEb 00^5463 175 Philips Semiconductors Product specification NPN 3 GHz , V; f = 800 MHz; Tamb = 25 °C lc = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C; Zg -60 £2; b§ = opt. , specification NPN 3 GHz wideband transistor BFG17A BFG17A 1.5 nF (1) (2) L1 = L3 = 5 nH Ferroxcube ... OCR Scan
datasheet

7 pages,
353.57 Kb

transistor smd zG datasheet abstract
datasheet frame
Abstract: . rbb- = 4 ps low noise (NF) Transistor, NPN Dimensions (Units : mm) 2SC3838K 2SC3838K (SMT3) JO , Transistor, NPN, 2SC series Absolute maximum ratings (Ta = 25°C) Parameter Collector-to-base voltage , 82-18 0 Q 120-270 180 MHVn Surface Mount Transistors Transistor, NPN, 2SC series 2SC3838K 2SC3838K , 181 2SC3838K 2SC3838K, 2SC4083 2SC4083 Transistor, NPN, 2SC series F R E Q U E N C Y : f ( G tl/i Figure 7 , VOLTAGE: Vc£ (V) 00 Figure 11 182 o RONRI Surface Mount Transistors Transistor, NPN ... OCR Scan
datasheet

6 pages,
175.68 Kb

2sc low noise npn, transistor, sc 107 b 2SC3838K 2SC4083 SC-59 SC-70 2SC3838K abstract
datasheet frame
Abstract: negative input, will be called ZG rather than Z1 or ZI, because this has become the accepted terminology , ZF + APPLY TEST SIGNAL (VTI) HERE ZG A VTO VTI - FIGURE 4. BLOCK DIAGRAM , ZF VTI ZG VOUT = VTO ZB I1 Z BUFFER FIGURE 5. CIRCUIT DIAGRAM FOR STABILITY , obtain Equation 13. + - + ZOUT VOUT (1+ZB/ZF|ZG) (EQ. 13) Dividing Equation 11 , V IN ­ V X - + I = -ZG ZF G=1 IZ I G ... Original
datasheet

7 pages,
75.92 Kb

npn zg AN9420 HA2841 HA5020 20logx HFA1120 Mancini Harris Semiconductor AN9420.1 Mancini* CFA AN9415 AN9420 abstract
datasheet frame
Abstract: , or to the source driving the negative input, will be called ZG rather than Z1 or ZI, because this , VTI ZG VOUT = VTO ZB I1 Z BUFFER FIGURE 5. CIRCUIT DIAGRAM FOR STABILITY ANALYSIS , INPUT I1 ZF + Z(I) VOUT UT GO (1+ZB/ZF|ZG) (EQ. 13) Dividing Equation 11 , BREAK LOOP HERE ZF VIN + G=1 APPLY TEST SIGNAL (VTI) HERE ZG + VOUT ZB - , previously mentioned reasons. ZG ZF VX FIGURE 6. NON-INVERTING CIRCUIT DIAGRAM (EQ. 15) VX = ... Original
datasheet

7 pages,
82.39 Kb

Mancini HFA1120 HA5020 HA2841 cf g1 rc AN9420 AN9415 Mancini* CFA AN9420 abstract
datasheet frame
Abstract: , or to the source driving the negative input, will be called ZG rather than Z1 or ZI, because this , VTI ZG VOUT = VTO ZB I1 Z BUFFER FIGURE 5. CIRCUIT DIAGRAM FOR STABILITY ANALYSIS , INPUT I1 ZF + Z(I) VOUT UT GO (1+ZB/ZF|ZG) (EQ. 13) Dividing Equation 11 , BREAK LOOP HERE ZF VIN + G=1 APPLY TEST SIGNAL (VTI) HERE ZG + VOUT ZB - , previously mentioned reasons. ZG ZF VX FIGURE 6. NON-INVERTING CIRCUIT DIAGRAM (EQ. 15) VX = ... Original
datasheet

7 pages,
82 Kb

Mancini* CFA Mancini HFA1120 HA5020 HA2841 AN9420.1 AN9420 AN9415 AN9420 abstract
datasheet frame
Abstract: 2N5102 2N5102 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5102 2N5102 is a High-power device for class-C, AM operation in VHF circuits. PACKAGE STYLE TO- 60 FEATURES INCLUDE: · POUT = 15 W min. @ 136 MHz. · Common Emitter Package MAXIMUM RATINGS IC VCER PDISS TSTG JC 3.3 A 10 A (PEAK) 50 V 70 W @ TC = 25 °C -65 °C to +200 °C 2.5 °C/W 1 = EMITTER 3 = COLLECTOR 2 = BASE CASE = EMITTER , = 24 V MHz IC = 3.0 A IC = 0.5 A f = 1.0 MHz Pout = 15 W(PEP)Zg = 50 f = 136 RBE = 5.0 VBE = -1.5 ... Original
datasheet

1 pages,
71.44 Kb

2N5102 2N5102 abstract
datasheet frame
Abstract: KTD1898 KTD1898 KTD1898 KTD1898 SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25) 2 3. EMITTER Collector current ICM: 1 A Collector-base voltage 100 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified , GR 70-140 120-240 200-400 ZO ZY ZG WEJ ELECTRONIC CO. Http:// www.wej.cn ... Original
datasheet

1 pages,
107.41 Kb

ZY marking KTD1898 transistor zg transistor marking zg KTD1898 abstract
datasheet frame
Abstract: Philips Semiconductors Product specification NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL BFQ22S BFQ22S SbE J> DESCRIPTION NPN transistor in a TO-72 metal envelope with insulated electrodes and a , NPN 6 GHz wideband transistor BFQ22S BFQ22S PHILIPS INTERNATIONAL SbE D - 711DflHb --HSB'iT DSD «PHIN , specification NPN 6 GHz wideband transistor r-3/'f 7 BFQ22S BFQ22S PHILIPS INTERNATIONAL 120 80 40 10 V0E = 8 , Product specification NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL 5fc.E D BFQ22S BFQ22S TllOflEb ... OCR Scan
datasheet

4 pages,
97.43 Kb

transistor bt2 transistor 6 MHz transistor dc 558 npn BFQ24 BFQ22S datasheet abstract
datasheet frame
Abstract: CMXT2222A CMXT2222A SURFACE MOUNT DUAL NPN SILICON TRANSISTOR Central" Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A CMXT2222A type is a dual NPN silicon transistor manufactured by the , =60V, Ta =125°C V q |t =60V, V|zg=3.0V V e b =3.0V lc =10nA lQ=10mA lE=10^A 1(3=150mA, lß=15mA lQ=500mA , Central Semiconductor Corp. CMXT2222A CMXT2222A SURFACE MOUNT DUAL NPN SILICON TRANSISTOR ELECTRICAL , LEAD CODE: 1) 2) 3) 4) 5) 6) EMITTER Q1 BASE Q1 COLLECTOR Q2 EMITTER Q2 BASE Q2 COLLECTOR Q1 NPN ... OCR Scan
datasheet

2 pages,
57.83 Kb

transistor marking zg npn Epitaxial Silicon zg CMXT2222A CMXT2222A abstract
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Datasheet Content (non pdf)

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Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
1 4 ZR DG 6 3 ZG .MODEL ZF D (IS=.64F IBV=10N BV=25 RS=75MEG 75MEG 75MEG 75MEG) .MODEL ZR D (IS=.64F IBV=10N BV=33.3) .MODEL ZG D (IS=.64F IBV=10N BV=5) .MODEL POUT PNP (IS=640F BF=1 CJE=2.41N TF=179N TR=34U) .MODEL NOUT NPN (IS=640F BF=100 RE=.181 RC=.181 + CJE=2.41N CJC=482P TF=179N TR=34U) .ENDS NOUT NPN (IS=200F BF=100 RC=.4 CJE=293P + CJC=58.6P TF=44.7N TR=6.37U) .ENDS CJE=268P) .MODEL NOUT NPN (IS=640F BF=100 RC=.375 + CJE=268P CJC=53.6P TF=80.1N TR=25.5U) .ENDS
www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/scr.lib
Spice Models 18/04/2010 52.25 Kb LIB scr.lib
MSC82100 MSC82100 MSC82100 MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry MSC82100 MSC82100 MSC82100 MSC82100 3/6 V CE = 18 V I C = 100 mA Zg = 50 ohms TYPICAL S - PARAMETERS MSC82100 MSC82100 MSC82100 MSC82100 4/6 PACKAGE MECHANICAL
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2761-v1.htm
STMicroelectronics 02/04/1999 4.13 Kb HTM 2761-v1.htm
MSC80197 MSC80197 MSC80197 MSC80197 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is OPERATION TYPICAL LINEAR GAIN vs COLLECTOR CURRENT MSC80197 MSC80197 MSC80197 MSC80197 3/6 V CE = 18 V I C = mA Zg = 50 ohms TYPICAL S
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2725-v2.htm
STMicroelectronics 14/06/1999 4.03 Kb HTM 2725-v2.htm
a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is vs COLLECTOR CURRENT MSC80186 MSC80186 MSC80186 MSC80186 3/6 V CE = 18 V I C = 220 mA Zg = 50 ohms TYPICAL S - PARAMETERS
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2722-v1.htm
STMicroelectronics 02/04/1999 4.04 Kb HTM 2722-v1.htm
28 dBm MIN. @ 2.0 GHz DESCRIPTION The MSC80185 MSC80185 MSC80185 MSC80185 is a hermetically sealed NPN power transistor C = 140 mA Zg = 50 ohms TYPICAL S - PARAMETERS MSC80185 MSC80185 MSC80185 MSC80185 4/6 PACKAGE MECHANICAL DATA
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2721-v3.htm
STMicroelectronics 25/05/2000 5.86 Kb HTM 2721-v3.htm
MSC80195 MSC80195 MSC80195 MSC80195 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is OPERATION TYPICAL LINEAR GAIN vs COLLECTOR CURRENT MSC80195 MSC80195 MSC80195 MSC80195 3/6 V CE = 18 V I C = 140mA Zg = 50 ohms
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2723-v1.htm
STMicroelectronics 02/04/1999 4.04 Kb HTM 2723-v1.htm
MSC82040 MSC82040 MSC82040 MSC82040 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry MSC82040 MSC82040 MSC82040 MSC82040 3/6 V CE = 18 V I C = 100 mA Zg = 50 ohms TYPICAL S - PARAMETERS MSC82040 MSC82040 MSC82040 MSC82040 4/6 PACKAGE MECHANICAL
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2760-v2.htm
STMicroelectronics 14/06/1999 4.09 Kb HTM 2760-v2.htm
MSC82100 MSC82100 MSC82100 MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry TYPICAL LINEAR GAIN vs COLLECTOR CURRENT MSC82100 MSC82100 MSC82100 MSC82100 3/6 V CE = 18 V I C = 100 mA Zg = 50 ohms
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2761.htm
STMicroelectronics 20/10/2000 6.18 Kb HTM 2761.htm
28 dBm MIN. @ 2.0 GHz DESCRIPTION The MSC80195 MSC80195 MSC80195 MSC80195 is a hermetically sealed NPN power transistor C = 140mA Zg = 50 ohms TYPICAL S - PARAMETERS MSC80195 MSC80195 MSC80195 MSC80195 4/6 PACKAGE MECHANICAL DATA
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2723-v3.htm
STMicroelectronics 25/05/2000 5.86 Kb HTM 2723-v3.htm
MSC82100 MSC82100 MSC82100 MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry MSC82100 MSC82100 MSC82100 MSC82100 3/6 V CE = 18 V I C = 100 mA Zg = 50 ohms TYPICAL S - PARAMETERS MSC82100 MSC82100 MSC82100 MSC82100 4/6 PACKAGE MECHANICAL
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2761-v2.htm
STMicroelectronics 14/06/1999 4.09 Kb HTM 2761-v2.htm