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Part Manufacturer Description Datasheet BUY
PMP4677 Texas Instruments low pwr boost w/ cassoded NPN visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS1-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil

npn zg

Catalog Datasheet MFG & Type PDF Document Tags

transistor zg

Abstract: zg transistor Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or , Product specification NPN 2 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER , = 25 "C; Zg = 60 ii; R l = 920 £2 F noise figure lc = 2 mA; VCE = 5 V; f = 100 MHz; Tamb " 25 °C; Zg = 60 Q lc = 2 mA; VCE = 5 V; f = 200 MHz; Tamb = 25 °C; Zg = 60 Q - September 1995 95
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transistor smd zG

Abstract: TRANSISTOR 610 smd Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION NPN , lc = 2 mA; V CE = 5 V; f = 800 MHz; Tamb = 25 °C; Zg = 60 Q; b§ = opt. - MIN. - TYP. MAX , 2 TllOfiEb 00^5463 175 Philips Semiconductors Product specification NPN 3 GHz , V; f = 800 MHz; Tamb = 25 °C lc = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C; Zg -60 £2; b§ = opt , specification NPN 3 GHz wideband transistor BFG17A 1.5 nF (1) (2) L1 = L3 = 5 nH Ferroxcube choke
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transistor smd zG TRANSISTOR 610 smd SMD Transistor zG npn zg MSB014 MBB374 MBB370 7110A2L

high resolution reflective omron

Abstract: zg 90 zinc . Simply enclose the range to be measured with the box. The ZG automatically optimizes the sensing , Conventional model ZG More than 30 times faster 100 ms The response time required from receiving , center ± measurement range) Conveying Measuring the end of warped panels ZG Series Sensor , , with the Sensor being used as a wide displacement gauge. ZG Series The end of warped panels can , at the desired timing. Conventional model ZG It was not possible to designate the timing
OMRON
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high resolution reflective omron zg 90 zinc IEC608251 30 pin flex cable lcd OMRON CPU 21 omron plc ZG-WDS22/70 Q150-E1-01A

BFQ65

Abstract: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 , PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the , GHz; E Tmb = 25°C 8 - dB F noise figure lc = 15 mA; VC = 8 V; Zg = opt.; E f= 1 , Product specification NPN 8 G H z wideband transistor BFQ65 N AMER PHILIPS/DISCRETE b'lE D , = 8 V; Zg = opt.; E f= 1 G H z ;T a b= 25°C m dB lc = 5 mA; VC = 8 V; Zs = opt.; E f =
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ZG-WDC41

Abstract: CLASS II LASER 21cfr EN60825-1 Head in the ZG Series is in Japanese. Replace it with the English label that comes with the product , cross-sectional area. Simply enclose the range to be measured with the box. The ZG automatically optimizes , object Shape profile data Conventional model ZG · The wide beam allows vehicle structural , ZG Series Through-beam measurement sensor Incident light Reflectivity varies Note , the end of warped panels ZG Series Reference plane High Image obtained from ordinary
OMRON
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ZG-WDC41 CLASS II LASER 21cfr EN60825-1 ZG-WDS22 ZG-RPD41 airbag ZS-XPT2 75-344-7068/F D-71154 7032-811-0/F 847-843-7900/F Q150-E1-01B

Mancini* CFA

Abstract: AN9415 , or to the source driving the negative input, will be called ZG rather than Z1 or ZI, because this , impedance loads. NON-INVERTING INPUT + ZOUT ZB - VTI ZG VOUT = VTO ZB I1 Z , UT GO (1+ZB/ZF|ZG) (EQ. 13) Dividing Equation 11 by Equation 13 yields Equation 14 , ZF VIN + G=1 APPLY TEST SIGNAL (VTI) HERE ZG + VOUT ZB - IZ I G , previously mentioned reasons. ZG ZF VX FIGURE 6. NON-INVERTING CIRCUIT DIAGRAM (EQ. 15) VX =
Intersil
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AN9420 AN9415 Mancini* CFA HA2841 HA5020 HFA1120 ISO9000

Transistor BFr 99

Abstract: Transistor BFR 96 SSC D â  fl235bDS OOOMbTO 2 â SIE6 ;i NPN Silicon Transistor for Low-Noise BFR 34 A RF Broadband Amplifiers _2 N 6620 - - - - . -0 D _/5- SIEMENS AKTIEN6ESELLSCHAF ' BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 (50 B 3 DIN 41 867) intended for use in RF amplifiers up to the GHz range, e. g. for low-noise input stages , 10 V; f = 2 GHz; Zg = Zg opt) Power gain (/c = 15 mA; VCE = 6 V; f = 800 MHz; flg = 60 £3) Output
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2N6620 Q62702-F346-S1 BFR34A Transistor BFr 99 Transistor BFR 96 TFC 718 S tfc 718 6620 Q68000-A4668 200MH

AN9415

Abstract: Mancini* CFA , or to the source driving the negative input, will be called ZG rather than Z1 or ZI, because this , impedance loads. NON-INVERTING INPUT + ZOUT ZB - VTI ZG VOUT = VTO ZB I1 Z , UT GO (1+ZB/ZF|ZG) (EQ. 13) Dividing Equation 11 by Equation 13 yields Equation 14 , ZF VIN + G=1 APPLY TEST SIGNAL (VTI) HERE ZG + VOUT ZB - IZ I G , previously mentioned reasons. ZG ZF VX FIGURE 6. NON-INVERTING CIRCUIT DIAGRAM (EQ. 15) VX =
Intersil
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Mancini AN9420.1

transistor marking zg

Abstract: marking z0 sot -6 Y BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high , V ce = 8 V, lc = 10 mA, Zg = Zsopt> Z L = 50 Q, f = 900 MHz V ce = 8 V, lc = 10 mA, Zg = Zsopt> Z L = 50 Q, f = 2 GHz Power gain V ce = 8 V, lc = 30 mA, Zg = Zsopt> Z L = 50 Q, f = 900 MHz V ce = 8 V, lc = 30 mA, Zg = Zsopt> Z L = 50 Q, f = 2 GHz Transducer gain V Ce = 8 V, lc = 30 mA, Z0 = 50 Q, f =
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transistor marking zg marking z0 sot -6 BFP193TW BFP193TRW BFP193T 193T/BFP 193TW/BFP 193TRW

ZG SOT23

Abstract: sot-23 Transistor MARKING CODE ZG SIEMENS NPN Silicon RF Transistor · For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA · = 7.5GHz F = 1.5dB at 900MHz BFR 280 ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking , capacitance l/EB = 0.5 V, f= 1 MHz Noise figure Iq = 1.5 mA, Vce = 5 V, Zg = Zg,^ /= 900 MHz f = 1.8 GHz Power , Intercept Point /P 3= /(/c) (3rd order, Output, Zg=2|_=50ii) V'ce = Parameter, f= 900MHz f= Parameter
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ZG SOT23 sot-23 Transistor MARKING CODE ZG 900MH Q62702-F1298

Jost, Steve, "Conversations About the HA5020 and CFA

Abstract: AN9415 negative input, will be called ZG rather than Z1 or ZI, because this has become the accepted terminology , ZF + APPLY TEST SIGNAL (VTI) HERE ZG A VTO VTI - FIGURE 4. BLOCK DIAGRAM , ZF VTI ZG VOUT = VTO ZB I1 Z BUFFER FIGURE 5. CIRCUIT DIAGRAM FOR STABILITY , obtain Equation 13. + - + ZOUT VOUT (1+ZB/ZF|ZG) (EQ. 13) Dividing Equation 11 , V IN ­ V X - + I = -ZG ZF G=1 IZ I G
Harris Semiconductor
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Jost, Steve, "Conversations About the HA5020 and CFA Harris Semiconductor AN9420.1 Jost, Steve, 20logx 1-800-4-HARRIS

DB-1MS

Abstract: SIEMENS NPN Silicon RF Transistor · For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA · fT = 8GHz F = 1.45dB at 900MHz BFP 181 ESP: Electrostatic discharge , capacitance UEB = 0.5V , /= 1 MHz Noise figure /C = 2 mA, VcE = 8 V, Zg = Zgopt f = 900 MHz Ceb h BFP 181 , 1.45 1.8 - f = 1.8 GHz Power gain lc = 5 mA, VC£ = 8 V, Zg = Zgopl = ^Lopt f = 900 MHz f = 1.8 GHz IS21el2 - 20 16.5 - Transducer gain Iq = 5 mA, Vq£ = 8 V, Zg =Z(_= 50 £i f = 900
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DB-1MS Q62702-F1271 BFP181

transistor marking zg

Abstract: sot-23 Transistor MARKING CODE ZG SIEMENS NPN Silicon RF Transistor · For low noise, high-gain amplifiers up to 2GHz · For linear broadband amplifiers · fT = 8GHz F=1.3dEl at 900MHz BFR 193 ESP: Electrostatic discharge sensitive , PF Emitter-base capacitance V&S = 0.5 V, f= 1 MHz Noise figure Iq = 10 mA, Vce = 8 V, Zg = Zsopt f= 900 MHz f= 1.8 GHz Power gain N? 2) dB ®ma 1.3 2.1 - = 30 mA, I/ce = 8 V, Zg = Zgopt f = 900 MHz 1.8 GHz Transducer gain Iq = 30 mA, f= -8 II O. - 14.5 9 - V, Zg - Z|_= 50 ß
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Q62702-F1218 EHA07222 BFR193

K 193 transistor

Abstract: ZG 1056 SIEMENS NPN Silicon RF Transistor · For low noise, high-gain amplifiers up to 2GHz · For linear broadband amplifiers · fT = 8GHz F = 1.3dB at 900M Hz BFG 193 ESP: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 193 Marking Ordering Code BFG193 Q62702-F1291 , capacitance VEB = 0.5 V, f = 1 MHz Noise figure !q = 10 mA, Vqe = 8 V, Zg = Zgopt f = 900 MHz f = 1.8 GHz , dB 1.3 2.1 - - /c = 30 mA, Vqe = 8 V, Zg = Zsopt Z l = ZLopt f = 900 MHz f = 1.8 GHz
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K 193 transistor ZG 1056
Abstract: S IE M E N S BF 775A NPN Silicon RF Transistor â'¢ Especially suitable for amplifiers and TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775A LGs Q62702-F1250 1 =B Package 2= E , 0.5 V, f= 1 MHz dB F Noise figure lc = 5 mA, Vqe = 8 V, Zg = Zsopt - 1.45 - - , Power gain 2) ^ma O â  O li lc = 15 mA, Vqe = 8 V, Zg = ZSopt Transducer gain ls -
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Q1H1717 01S171 IS21/S

Q62702-F1359

Abstract: mmic+SMD+amplifier+marking+code+19s SIEMENS NPN Silicon RF Transistor · For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA · CECC-type available: C E C C 50 002/259 BFG 19S ESP: Electrostatic discharge sensitive device, observe handling , capacitance VEB = 0 . 5 V ,i= 1 MHz Noise figure /c = 20 mA, 1/cE = 8 V, Zg = Zgopt f= 900 MHz f= 1.8 GHz Power gain 2) ^ma Iq = 70 mA, Vce = 8 V, Zg = Zg0pt 2.5 4 F C'eb 4.6 ^ce 0.4 Ccb 0.85 1.4 h 4 5.5 Values
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Q62702-F1359 mmic+SMD+amplifier+marking+code+19s transistor 7g 12L marking BFG19S

transistor marking zg

Abstract: LC marking code transistor CMXT2222A SURFACE MOUNT DUAL NPN SILICON TRANSISTOR Central" Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the , =60V, Ta =125°C V q |t =60V, V|zg=3.0V V e b =3.0V lc =10nA lQ=10mA lE=10^A 1(3=150mA, lß=15mA lQ , -January 2003) 538 Central Semiconductor Corp. CMXT2222A SURFACE MOUNT DUAL NPN SILICON TRANSISTOR , NPN Q2 NPN Q1 MARKING CODE: X1P 1 LJ 2 539 LJ3 R1 (06-January 2003)
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LC marking code transistor 0118 transistor npn Epitaxial Silicon zg 538 NPN transistor 100MH 100MA

2N5070

Abstract: RCA-2N5070 File No. 268 DUGd/ZD RF Power Transistors Solid State Division 2N5070 Silicon N-P-N Overlay Transistor For High-Frequency Single-Sideband Communications Equipment Features: â  Suitable lor class A , max. â  Low thermal resistance RCAâ'"2N5070* is an epitaxial silicon n-p-n planar transistor of the , , f2 = 30.001 MHz Pi - 1.25 PEP W Intermodulation Distortion ZG = 50Ã2, PD = 25 W(PEP) f! = 30 MHz, f2 = 30.001 MHz IMD - 30 dB Collector Efficiency ZG = 50Ã2, Pâ'ž = 25 W(PEP) f, = 30 MHz
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RCA-2N5070 2N5070 equivalent rca 2N5070 IB77 Single-Sideband overlay transistor TA2793

2N4440

Abstract: IM4440 File No. 217 [JUS/ZD RF Power Transistors Solid State Division 2N4440 jedec to-60 Silicon N-P-N Overlay Transistor For Class A, B, or C VHF/UHF Military and Industrial Communications Equipment , silicon n-p-n planar transistor of the overlay emitter-electrode construction. It is intended for Class AA , Input Power (P0 - 5 W, ZG - 50«, f - 400 MHz) pi 1.7 W Collector Circuit Efficiency (P0 - 5 W,ZG = 50n, f = 400 MHz) "c. 45 - % Base-Spreading Resistance Measured at 200 MHz rbb' 28
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TA2875 IM4440 RCA Power Transistor 4 225 RCA TO60 TRANSISTORS rca transistor rca rf overlay transistor RCA-2N4440

ti 829

Abstract: transistors zb signal, VTI, and calculating the return signal VTO develops the stability equation. + CFA _ ZG , VOUT = VTO I1 ZF ZG ZB I1Z Figure 8­3. Stability Analysis Circuit The transfer , + I 1Z F 1 ) ZG ZF ø ZG (8­4) Dividing Equation 8­1 by Equation 8­4 yields Equation 8­5 , + G=1 ZB I ­ + G=1 IZ VOUT ZF ZG VA Figure 8­4. Noninverting CFA , equation, Equation 8­9. V OUT + IZ I+ (8­6) V ­V VA ­ OUT A ZG ZF (8­7) V A +
Texas Instruments
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SLOD006A ti 829 transistors zb SLOA080
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