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LMG5200MOFR Texas Instruments 80V GaN Half Bridge Power Stage 9-QFM -40 to 125 visit Texas Instruments
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nitride

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LTS2020

Abstract: LTS-2020 have a composite passivation layer consisting of a 1-µm oxide capped with a 1-µm nitride. Nitride , source for hydrogen. In addition, others have observed that some bipolar devices with nitride passivation layers are more sensitive to PETS effects than devices without nitride passivation [11]. To investigate the effect of the nitride passivation layer on PETS and ELDRS effects we removed the nitride , microscope (SEM) cross section taken after wet etching a die. Note that not all of the nitride layer could
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DE-AC04-94AL85000 LM111 LM139 LTS2020 LTS-2020 al 2539 LM111S NATIONAL SEMICONDUCTOR Rad hardness 250C/200 450C/200
Abstract: between the two types of silicon nitride. Electrical characterization of MIM capacitor shows that there , Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT , 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride (Si3N4) films deposited using , silicon nitride film deposited as a multi-layer-layer film has different properties compared to a film , , there are multiple materials that can be used as MIM capacitor dielectric. They include silicon nitride -
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Abstract: the resistive film to prevent corrosion. â'¢ Moisture Resistant Tantalum Nitride Film â'" Our versatile chip resistors are also available with tantalum nitride resistive film. Tantalum nitride is a , , Precision High Low-TCR Precision Power, Aluminum Automotive Moisture-Resistant Nitride substrate , Passivated Nichrome Passivated Nichrome Passivated Nichrome Tantalum Nitride Passivated , Tantalum Nitride Passivated Nichrome Ruthenium Tantalum Nitride Tantalum Nitride Tantalum Nitride Vishay Dale
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VMN-SG2168-1502

nichrome resistor failures

Abstract: tantalum nitride Sacrifices Thin Film Chip Resistors are available in either Nichrome resistor film or Tantalum Nitride. The , Nitride. Test Conclusion TECH NOTE The biggest advantage of the HAST test is that it is much , hermetic packages. Tantalum Nitride resistor films have typically been the film of choice but require , , costly hermetic packaging or use of tantalum nitride films. This Tech Note is intended to be a , . The moisture resistance of tantalum nitride depends on the proper thickness of Tantalum Pentoxide
Vishay Thin Film
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nichrome resistor failures tantalum nitride tantalum pentoxide dielectric strength nitride 22A110 A110 22-A110
Abstract: TAMELOX or TANTALUM NITRIDE custom (N S ). 148 TAMELOX or TANTALUM NITRIDE or CHROMIUM SILICON custom (NS, NEj .148 TANTALUM NITRIDE or TAMELOX S20/A20 (NS) . . . .155 TA-22T (NE) . . . .1 5 8 CHROMIUM SILICON CS 22 (NE) . . .160 TANTALUM NITRIDE or TAMELOX , TANTALUM NITRIDE S50/A50 (N S ). 155 CHROMIUM SILICON CS 55 (NE) .174 , S30R, A30R / S30V, A30V (NS) .181 TANTALUM NITRIDE Center tap TAMELOX or -
OCR Scan
S40/A40 RMK-55 RMK-515 CS-522 RMK-22 RSK-22

silicon carbide

Abstract: gallium nitride Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InGaAIP - Indium Gallium Aluminum Phosphide InGaAIP - Indium Gallium Aluminum Phosphide GaP/GaP - , Phosphide/Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride GaN - Gallium Nitride ISO 9001
LEDtronics
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IR941 silicon carbide gallium nitride silicon carbide LED ultraviolet led 5mm 3000mcd IR881 IR851 PG350 AG10K UB500

led green Gallium phosphide

Abstract: silicon carbide /GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InG aAlP - Indium Gallium Aluminum Phosphide InG aAlP - Indium Gallium Alum inum , - Gallium Phosphide/Gallium Phosphide SIC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride GaN - Gallium
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OCR Scan
led green Gallium phosphide 4500K 6500K 8000K UV405 UV395 UV750

Improving Front Side Process Uniformity by Back-Side Metallization

Abstract: compressive silicon nitride film in a Novellus PECVD tool. The nitride thickness was measured on a Nanospec , a short nitride etch in a RIE tool. Standard etch chemistry with SF6 being the main etch gas was used for the experiment. The etch recipe was created to remove about 2500A of nitride so that there was enough silicon nitride remaining on the wafer for CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA mapping. The nitride thickness was measured again for thickness
Skyworks Solutions
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Improving Front Side Process Uniformity by Back-Side Metallization
Abstract: Resistant Tantalum Nitride Film â'" Our versatile chip resistors are also available with tantalum nitride resistive film. Tantalum nitride is a self passivating film with superior moisture resistance , Passivated Nichrome Passivated Nichrome Passivated Nichrome Tantalum Nitride Resistance Range , Industrial Thick Film Chip Resistor Passivated Nichrome Tantalum Nitride Passivated Nichrome Ruthenium Tantalum Nitride Tantalum Nitride Tantalum Nitride Resistance Range 10 Ω to 3 MΩ 10 Vishay Dale
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VMN-SG2168-1310

LORIN

Abstract: 3P3T switch by modifying the PIN structure and incorporating nitride under the transmission lines. A description of the voltage limitations of this underlying nitride film and the use of test structures to , . This limitation was easily remedied by depositing a second layer of compressive nitride 3000 angstroms thick to the first for a total of 4000 angstroms. Our decision to use a composite nitride film permitted us to combine two nitride layers of sufficient thickness to support large potentials while
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LORIN 3P3T switch mesa diode high voltage diode high voltage diodes normal radar circuit

D149

Abstract: TPLITM220 performance leader T-pliTM 200 is a premium gap filler. A unique blend of boron nitride and silicone , boron nitride filled silicone elastomer Boron nitride filled silicone elastomer Boron nitride , Thicknesses: 0.025" (0.64mm) 0.100" (2.54mm) 0.180" (4.57mm) T-pliTM 260 Boron nitride filled Boron nitride filled silicone elastomer silicone elastomer 3.40 ASTM D150 0.040" (1.02mm) 0.120 , Composition Boron nitride filled, silicone elastomer Boron nitride filled, silicone elastomer
Laird Technologies
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D149 TPLITM220 D150 D2240 D257 D412

Gunn Diode

Abstract: Microwave Silicon Detector Diode DC4402 SILICON NITRIDE CHIP CAPACITOR 203 16 Product List (continued) TYPE No. DESCRIPTION 164403 DC4404 SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR 203 203 203 203 203 203 I C lt lllll DC4412 SIUCONNITRJDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR 203 203
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OCR Scan
Gunn Diode Microwave Silicon Detector Diode Silicon Detector UHF diode varactor diode filter DW9248 DA1304 DA1307 DA1321 DA1321-1 DA1338 DA1338-1

D149

Abstract: D150 outstanding properties are the result of a proprietary boron nitride filler in the composition. The high , T-flexTM 620 Construction & Composition T-flexTM 640 T-flexTM 660 Reinforced boron nitride Boron nitride filled filled silicone elastomer silicone elastomer T-flexTM 680 T-flexTM 6100 Boron nitride filled silicone elastomer Boron nitride filled silicone elastomer Boron nitride filled , T-flexTM 6120 T-flexTM 6130 Construction Composition Boron nitride filled, silicone elastomer
Laird Technologies
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E595

led green Gallium phosphide

Abstract: ir941 Phosphide /Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InGaAIP - Indium Gallium Aluminum Phosphide InGaAIP - , Aluminum Phosphide GaP/GaP - Gallium Phosphide/Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride Super Pure Yellow 2.1 Yellow Incand White Pale White Cool White 2.1 3.6 3.6 3.6
LEDtronics
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Gallium phosphide
Abstract: Resistant Tantalum Nitride Film - Our versatile line of chip resistors are also available with tantalum nitride resistive film. Tantalum nitride is a self passivating film with superior moisture resistance , Industrial Industrial Thick Film Chip Resistor Passivated Nichrome Tantalum Nitride Tantalum Nitride Tantalum Nitride Passivated Nichrome 10 Ω to 3 MΩ 10 Ω to 3 MΩ 10 Ω to 3 , Telecommunications Moisture-resistant tantalum nitride resistor film on high-purity alumina substrate Vishay Intertechnology
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VMN-SG2168-1304

tantalum nitride

Abstract: A110 Sacrifices Thin Film Chip Resistors are available in either Nichrome resistor film or Tantalum Nitride. The , Nitride. Test Conclusion TECH NOTE The biggest advantage of the HAST test is that it is much , hermetic packages. Tantalum Nitride resistor films have typically been the film of choice but require , , costly hermetic packaging or use of tantalum nitride films. This Tech Note is intended to be a , . The moisture resistance of tantalum nitride depends on the proper thickness of Tantalum Pentoxide
Vishay Foil Resistors
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VISHAY film resistors
Abstract: MNS chips use silicon nitride dielectric upon a highly doped silicon substrate. This subs.rate acts , nitride dielectric was chosen in preference to an oxide or a ceramic. The critical design considerations are very high insulation resistance, low dissipation factor and ruggedness. Silicon nitride offers , Q factor to give minimum losses. The high dielectric breakdown strength of silicon nitride , capacitance values to be obtained with small chip sizes. The higher dielectric constant of a nitride -
OCR Scan
CT3441-2

arsenic

Abstract: silicon carbide Phosphide /Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InGaAIP - Indium Gallium Aluminum Phosphide InGaAIP - , Aluminum Phosphide GaP/GaP - Gallium Phosphide/Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride Super Pure Yellow 2.1 Yellow Incand White Pale White Cool White 2.1 3.6 3.6 3.6
LEDtronics
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arsenic

RFP-100200N4Z50-2

Abstract: Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features · DC ­ 2.0 GHz · 10 Watts Aluminum Nitride SMD Terminations Model RFP-100200N4Z50-2 Aluminum Nitride Terminations 50 ohms, ±2% DC - 2.0 GHz 10 Watts , inches. Specifications subject to change without notice. · Aluminum Nitride (AlN) Ceramic · Surface , 251369 1 Aluminum Nitride SMD Terminations Model RFP-100200N4Z50-2 Typical Performance
Anaren
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MIL-E-5400
Abstract: volume to the hybrid circuit and allied industries. Nichrome or tantalum nitride resistor material can be , array of long term stability curves for nichrome and tantalum nitride resistors are displayed on the , nichrome and tantalum nitride are available on silicon or ceramic substrates. The application of these , recommended for the highest density with slightly lower long term stability. Tantalum nitride on silicon is recommended for use in non-hermetic, high moisture operating environments. Tantalum nitride on alumina is the -
OCR Scan
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