NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Photometry, lightmeter Radiometry Light barriers Remote Control Daylight filter included l > 900nm IR Data Transmission fc < 10 MHz Daylight filter included l > 820 nm IR Data Transmission fc < 10 MHz , V Photo Voltaic Cell with Filter (Calibrated) , 1 cm2 = 0.01 sr Iro 10 k mV Riw1 M , devices being used mainly in IR transmission systems together with IR emitters (e.g., IR remote control, IR headphone). Operation is possible both with dc or pulsed current. The adjustment of irradiance ... | Original |
11 pages, |
BPV10NF large area quadrant photodiode phototransistor K-T Photoconductive Cell OSRAM Infrared Emitters chip BPW34 application note BPW34 osram BPW 23 nf solar cell transistor infrared photo voltaic cell Vishay Telefunken Phototransistor pin diodes radiation detector datasheet abstract |
| Abstract: > 900nm IR Data Transmission fc < 10 MHz Daylight filter included l > 820 nm IR Data Transmission fc , VS = 20V Photo Voltaic Cell with Filter (Calibrated) , 1 cm2 = 0.01 sr Iro 10k mV , systems together with IR emitters (e.g., IR remote control, IR headphone). Operation is possible both , standard-A illuminance of 100 or 1000 lx with a color temperature of Tf = 2856 K. Alternatively an IR , cannot be measured with IR diodes because of their spectral sensitivity (e.g. BPW21R BPW21R). This is because ... | Original |
11 pages, |
BPW20R BPW21R BPW34 BPW34 application BPW 10 nf BPW46 BPW97 calibration of phototransistor circuit infrared phototransistor for tv BPV22NF BPV10NF photodiode application luxmeter S153P bpw uv photodiode datasheet abstract |
| Abstract: possible by using a Vishay IR receiver with a 25 kHz carrier frequency and an 830 nm or 850 nm emitter. 1 , needed. This is possible with Vishay`s infrared sensors with variable gain, also called the "P" or , emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily broad portfolio of , light sensor, the intensity of a surface emitter, or object detection with a reflective or transmissive , company with over 30 years of experience in emitter and detector die fabrication and packaging know-how. ... | Original |
17 pages, |
BPW34 application note TSOP*4438 zero crossing dimmer igbt BPW77NB phototransistor ultraviolet ultraviolet sensor flame tsop Ir sensor touch sensitive siren BPW21R APPLICATION NOTE BpW34 VSLB3948 vo3120 datasheet abstract |
| Abstract: larger, 5 mm TSAL6200 TSAL6200 in a 40 % smaller form factor. R1 Transmitter with TSALxxxx IR receiver VS Circuit , 16-Bit Resolution Yields Clear Signal Even with a dirty, scratched or poor IR transparent window, the , With Vishay's 3D IR Receivers, only one emitter is required in the TV to transmit the 3D , sensors with variable gain, also called the "P" or proximity sensors: TSOP4P38 TSOP4P38, TSOP5P38 TSOP5P38 and TSOP58P38 TSOP58P38. , < Proximity Sensing up to 20 ... | Original |
18 pages, |
ir proximity sensor motion IR DETECTOR PHOTODIODE BP104 Greenwich Electronics TEMT6000 tept5600 response time touch sensitive siren using transistor United Detector Technology Photodiodes Vo22 rc6 encoder Infrared remote control diameter lens phototransistor automatic street light using scr datasheet abstract |
| Abstract: angle of = 1 sr. IF Photo Voltaic Cell with Filter (Calibrated) , 1 cm2 = 0.01 sr 94 8155 , devices being used mainly in IR transmission systems together with IR emitters (e.g., IR remote con- , standard-A illuminance of 100 or 1000 lx with a color temperature of Tf = 2856 K. Alternatively an IR , characteristics of IR emitters, for example (tr 10 to 1000 ns) are measured with aid of a PIN Photodiode , are used as light sources only for devices which cannot be measured with IR diodes because of their ... | Original |
10 pages, |
BPW41N IR DATA BPW34-family BPW46 photodiode phototransistor application lux meter TESP5700 BPW24 bpw filter BPW20RF application BPW24R BPW21R osram luxmeter detector BPW34 BPW21R datasheet abstract |
| Abstract: lamp), to measure detector devices being used mainly in IR transmission systems together with IR emitters (e.g., IR remote control, IR headphone). Operation is possible both with DC or pulsed current. , characteristics of IR emitters, for example (tr 10 ns to 1000 ns), are measured with aid of a PIN , light-emitting diodes are used as light sources only for devices which cannot be measured with IR diodes because , photodetectors are used in manifold applications, such as sensors for radiation from near UV over visible to ... | Original |
9 pages, |
bpw20 BPW41 IR DATA BPW41 remote control sensor BPW34 application note phototransistor sensitive to red light BPW20RF BPW21R far uv photodiode BPW34 application BPW34 photodiode application luxmeter BPW21 BPW41N datasheet abstract |
| Abstract: increases with decreasing wavelength. Standard detectors designed for visible and near IR radiation may , , and Near IR Silicon Photodetectors 94 8597 0 Figure 4. Generation-recombination effects in , very small near the contacts and the surfaces of the device. For short wavelengths with very small , efficiency is observed with increasing temperature because of increased recombination rates near the , instabilities of detectors in the blue, UV, and near IR under certain conditions. Thermal cycling reversed the ... | Original |
14 pages, |
10MW Telefunken Phototransistor BPW21R photodiode application luxmeter Dielectric Constant Silicon Nitride External Quantum Efficiency solar solar cell transistor infrared uv phototransistor datasheet abstract |
| Abstract: , and Near IR Silicon Photodetectors 94 8597 0 Figure 65. Generation-recombination effects in , very small near the contacts and the surfaces of the device. For short wavelengths with very small , the semiconductor. The reduction in the efficiency starts near 500 nm and increases with decreasing wavelength. Standard detectors designed for visible and near IR radiation may have only poor UV/blue sensitivity and poor UV stability. Well designed sensors for wavelengths of 300 to 400 nm can operate with ... | Original |
14 pages, |
RECTIFIER 8212 photodiode application luxmeter osram Phototransistor emitter "1060 nm" BPW21R 7.6 v AXIAL INCANDESCENT datasheet abstract |
| Abstract: sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, (p = 950 nm). 94 8673 Features Applications · High radiant sensitivity (2.5 mA) · Miniature side view package with cylindrical lens e2 · Horizontal angle 9of half intensity ± 60° · Suitable for near IR radiation · Matches with TSSS2600 TSSS2600 IR emitter · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC 2002/95/EC and ... | Original |
6 pages, |
TSSS2600 TEST2600 near IR sensors with daylight filter TEST2600 abstract |
| Abstract: of the reflectance measurement through pulse averaging. When used with IR filters and lenses, it is , with the photodetector current, the TXO drive is shut off. Given that the ambient IR circuit takes , Lambertian properties with slight specular highlights near the angle defined by the Law of Reflection. In , Si1120 are low-cost, high-performance, active-optical reflectance-based proximity sensors. Both drive an , well suited for applications, such as electronic toys, powering transmitters for RF alarm sensors, and ... | Original |
22 pages, |
Si1102 infrared human motion detection sensor AN442 PRX50 PRX400 analogue proximity-Sensor circuit dispenser motion sensors inductive proximity detector ic Reflective Optical Sensor focused LED LEVEL METER DRIVER ACTIVE INFRARED MOTION DETECTOR human MOTION DETECTOR ir sensor AN442 abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| WITH DAYLIGHT-FILTER; SHORT SWITCHING TIME(typ. 20ns); IR REMOTE CONTROL OF HI-FI AND TV SETS, VIDEO .0 DIL PLASTIC SILICON PHOTODIODE WITH DAYLIGHT-FILTER; SHORT SWITCHING TIME(typ. 20ns); IR REMOTE -PHOTODIODE WITH DAYLIGHT-FILTER; IR-REMOTE CONTROL OF HI-FI AND TV SETS, VIDEO TAPE RECORDERS, DIMMERS; ESPECIALLY 6.9m 25.7m 27.1m 4,7m 2.0 5-mm-LED SILICON PIN-PHOTODIODE WITH DAYLIGHT-FILTER; IR-REMOTE CONTROL OF 1.1m 1.2m 6.2m 6.7m 1.1m 1.2m 2.0 DIL PLASTIC SILICON PHOTODIODE WITH DAYLIGHT-FILTER; SHORT www.datasheetarchive.com/download/21266866-169524ZC/fotodiod.zip (fotodiod.xls) |
Infineon | 19/02/2000 | 56.28 Kb | ZIP | fotodiod.zip |