NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| NDT3055 | Fairchild Semiconductor | N-Channel Enhancement Mode Field Effect Transistor |
8 pages, |
Original | |
| NDT3055 | Fairchild Semiconductor | N-Channel Enhancement Mode Field Effect Transistor |
5 pages, |
Original | |
| NDT3055 | National Semiconductor | N-Channel Enhancement Mode Field Effect Transistor |
6 pages, |
Original | |
| NDT3055 | Toshiba | Power MOSFETs Cross Reference Guide |
67 pages, |
Original | |
| NDT3055_J23Z | Fairchild Semiconductor | Transistor Mosfet N-CH 60V 4A 4SOT-223 T/R |
5 pages, |
Original | |
| NDT3055J23Z | Fairchild Semiconductor | N-Channel Enhancement Mode Field Effect Transistor |
5 pages, |
Original | |
| NDT3055L | Fairchild Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
8 pages, |
Original | |
| NDT3055L | Fairchild Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
5 pages, |
Original | |
| NDT3055L | National Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
6 pages, |
Original | |
| NDT3055L | Toshiba | Power MOSFETs Cross Reference Guide |
67 pages, |
Original | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 0 National Semiconductor September 1996 NDT3055 N-Channel Enhancement Mode Field Effect , * (J23Z) Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter NDT3055 Units , °C/W Order option J23Z for cropped center drain lead. NDT3055 Rev. D1 This Material Copyrighted By , 6 10 nC NDT3055 Rev. D1 This Material Copyrighted By Its Respective Manufacturer , Test: Pulse Width < 300ps, Duty Cycle < 2.0%. NDT3055 Rev. D1 This Material Copyrighted By Its ... | OCR Scan |
7 pages, |
NDT3055 NDT3055 abstract |
| Abstract: N September 1996 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General , Symbol Parameter NDT3055 Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source , (Note 1) 12 癈/W * Order option J23Z for cropped center drain lead. NDT3055 Rev. D1 , = 10 V NDT3055 Rev. D1 Electrical Characteristics (T Symbol A = 25癈 unless otherwise , < 2.0%. NDT3055 Rev. D1 Typical Electrical Characteristics 3 VGS = 10V 8.0 7.0 R DS(on ... | Original |
6 pages, |
NDT3055 datasheet abstract |
| Abstract: May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description , Drain-Source Voltage NDT3055 VGSS Gate-Source Voltage - Continuous ID Maximum Drain Current - , Corporation NDT3055 Rev.B Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol , paper 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0% NDT3055 Rev.B Typical Electrical , Temperature. NDT3055 Rev.B 1000 15 I D = 4A VDS = 10V 500 20V 40V 12 CAPACITANCE (pF ... | Original |
5 pages, |
SOIC-16 NDT3055 NDT3055 abstract |
| Abstract: May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description , Drain-Source Voltage NDT3055 VGSS Gate-Source Voltage - Continuous ID Maximum Drain Current - , Corporation NDT3055 Rev.B Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol , paper 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0% NDT3055 Rev.B Typical Electrical , Temperature. NDT3055 Rev.B 1000 15 I D = 4A VDS = 10V 500 20V 40V 12 CAPACITANCE (pF ... | Original |
8 pages, |
SOIC-16 PN2222A NDT3055 F852 F63TNR CBVK741B019 NDT3055 abstract |
| Abstract: e* National Semiconductor™ June 1996 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand , Parameter NDT3055 Units V„. Drain-Source Voltage 60 Gate-Source Voltage - Continuous ±20 Drain ... | OCR Scan |
6 pages, |
NDT3055 gstm L04A M0144 NDT3055 abstract |
| Abstract: PWMD CS Q1 4 NDT3055 U2 Open Circuit Protection 2 GND PWMD R5 0.05, 1/4W , Supertex MSS1278-153MXB MSS1278-153MXB NDT3055 MMBT2907A MMBT2907A ERJ-L14KF50MU ERJ-L14KF50MU ERJ-6ENF1003V ERJ-6ENF1003V ERJ-6GEYJ102V ERJ-6GEYJ102V ERJ-6ENF3403V ERJ-6ENF3403V ... | Original |
4 pages, |
zener diode h49 Application of MMBT2907A BZX84C24-7 hv9910 application note 100k preset variable resistor HV9910LG MMBT2907A smd transistor v2 ndt3055 AN-H49 HV9910DB4 v.2 smd transistor HB POT 100K preset HV9910DB4 HV9910 HV9910DB4 abstract |
| Abstract: 1.1 HUF75307T3ST HUF75307T3ST 55 Single 0.09 - - - 8.3 2.6 1.1 NDT3055 60 ... | Original |
2 pages, |
NDT453N FDT439N FDT457N FDT459N FQT13N06 FQT13N06L HUF75307T3ST HUF75309T3ST HUFA75309T3ST NDT3055 NDT451AN FDT3612 IRFM120A FQT7N10 NDT453N abstract |
| Abstract: 3 2 2 2 4 3 R45 4.7K 4 SFH617A SFH617A_DIP8 Q7 1 NDT3055 GND_DIG GND_DIG ... | Original |
2 pages, |
R33 6pin MCP1404 HSR312 220R CMP2A IRLB3036 RJ11-6-pin CMP1A datasheet abstract |
| Abstract: NDS8434A NDS8434A SO-8, P NDT2955 NDT2955 NDT2955 NDT2955 SOT-223, P NDS8434A NDS8434A NDS8434A NDS8434A SO-8, P NDT3055 NDT3055 SOT-223, N NDS8435 NDS8435 NDS8435A NDS8435A SO-8, P NDT3055L NDT3055L SOT-223, N NDS8435A NDS8435A , , N MMFT3055V MMFT3055V NDT3055 SOT-223, N MTP3600 MTP3600 NDP7060L NDP7060L TO-220, N MMFT3055VL2 MMFT3055VL2 NDT3055 SOT-223, N MTP36N06E MTP36N06E NDB5060L NDB5060L TO-263, N MMSF2P02E MMSF2P02E NDS9400A NDS9400A SO-8, P , PHT6N06LT PHT6N06LT NDT3055L SOT-223, N Si6426DQ Si6426DQ^ NDH831N NDH831N TSSOP-8, N PHT6N06T PHT6N06T NDT014L NDT014L SOT-223 ... | Original |
7 pages, |
TO-220 2N7002 SMP60N06 IRL3402 BSS100 TO-92 SMP50N06 SMP75N06-08 SUP40N06-25L NDS9943 IRFZ48N IRF7303 NDT3055L SMP40N06 SMP50N06-25 IRLL014N 2N7000 2N7002 2N7000 abstract |
| Abstract: NDT3055 www.intersil.com 1-888-INTERSIL 1-888-INTERSIL ext. 7955 Intersil Corporation | Post Office Box 883 ... | Original |
2 pages, |
MOSFET IRFZ44N HUF75329P3 equivalent SMU15n05 SUB75N08-10 IRF3710 equivalent IRFZ48N SMP15N05 IRFz48N MOSFET irfz34n equivalent HUF75343P3 equivalent irf3710 equivalent IRF3205 equivalent irf3205 ups datasheet abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| .SUBCKT NDT3055 20 10 30 *FAIRCHILD SUBCKT NDT3055, 3 *Node 1,Drain *Node 2,Gate *Node 3,Source * Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=3.1 KP=5.8 THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m *TC=0.00656 Dds 3 4 DDS .MODEL DDS D(BV=60 M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 4E-13 4E-13 4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m *TC=0.00656 Rs 3 5 2m Ls E3 9 1 4 1 -2 .ENDS NDT3055 www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/eds_sbk/fairchld/ndt3055.sbc |
Kaleidoscope | 06/08/1999 | 0.62 Kb | SBC | ndt3055.sbc |
| *NDT3055 at Temp. Electrical Model *- .SUBCKT NDT3055 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=3.8 KP=1.2E+1 +THETA=0.1 VMAX=0.5E5 LEVEL=3) Cgs 1 5x 300p Rd 20 4 3E-2 Dds 5x 4 DDS .MODEL DDS D(M=4.4E-1 VJ=9.29E-1 29E-1 29E-1 29E-1 CJO=479p) Dbody 5x 20 DBODY .MODEL DBODY D(IS=3.5E-13 5E-13 5E-13 5E-13 N=1 20 DB1 DBLK .MODEL DBLK D(IS=1E-14 1E-14 1E-14 1E-14 CJO=.1p RS=.1) EDB DB1 0 VB1 0 1 .ENDS NDT3055 *NDT3055 (Rev www.datasheetarchive.com/files/fairchild/pdfs/models actual/ndt3055.mod |
Fairchild | 22/08/2003 | 1.11 Kb | MOD | ndt3055.mod |
| *NDT3055 at Temp. Electrical Model *- .SUBCKT NDT3055 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=3.8 KP=1.2E+1 +THETA=0.1 VMAX=0.5E5 LEVEL=3) Cgs 1 5x 300p Rd 20 4 3E-2 Dds 5x 4 DDS .MODEL DDS D(M=4.4E-1 VJ=9.29E-1 29E-1 29E-1 29E-1 CJO=479p) Dbody 5x 20 DBODY .MODEL DBODY D(IS=3.5E-13 5E-13 5E-13 5E-13 N=1 20 DB1 DBLK .MODEL DBLK D(IS=1E-14 1E-14 1E-14 1E-14 CJO=.1p RS=.1) EDB DB1 0 VB1 0 1 .ENDS NDT3055 *NDT3055 (Rev www.datasheetarchive.com/files/fairchild/pdfs/models/ndt3055.txt |
Fairchild | 22/08/2003 | 1.11 Kb | TXT | ndt3055.txt |
| *NDT3055 ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * - .SUBCKT NDT3055 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00184*TEMP+1.046}} KP={-0.011*TEMP+6.075} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT3055 * * * NDT3055 THERMAL MODEL table {TIME} ; Normalized NDT3055 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0 www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/fairchild/nd/ndt3055.lib |
Spice Models | 29/07/2012 | 1.94 Kb | LIB | ndt3055.lib |
| *MTD3055VL MTD3055VL MTD3055VL MTD3055VL at Temp. Electrical Model *- *$ .SUBCKT NDT3055L 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=1.8 KP=2.06E+1 +THETA=0.1 VMAX=0.5E5 LEVEL=3) Cgs 1 5x 511p Rd 20 4 3E-2 Dds 5x 4 DDS .MODEL DDS D(M=3.84E-1 84E-1 84E-1 84E-1 VJ=5.85E-1 85E-1 85E-1 85E-1 CJO=498p) Dbody 5x 20 DBODY .MODEL DBODY D(IS=5.5E-12 5E-12 5E-12 5E-12 N=1.18 RS (IS=1E-14 1E-14 1E-14 1E-14 CJO=.1p RS=.1) EDB DB1 0 VB1 0 1 .ENDS NDT3055L *NDT3055L (Rev.A) 5/11/06 *ST *$ www.datasheetarchive.com/files/fairchild/simulation-models/ndt3055l.lib |
Fairchild | 22/10/2012 | 1.07 Kb | LIB | ndt3055l.lib |
| *NDT3055 at Temp. Electrical Model *- *$ .SUBCKT MTD3055V MTD3055V MTD3055V MTD3055V 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=3.2 KP=1.2E+1 +THETA=0.1 VMAX=0.5E5 LEVEL=3) Cgs 1 5x 300p Rd 20 4 2.8E-2 Dds 5x 4 DDS .MODEL DDS D(M=4.4E-1 VJ=9.29E-1 29E-1 29E-1 29E-1 CJO=479p) Dbody 5x 20 DBODY .MODEL DBODY D(IS=3.5E-13 5E-13 5E-13 5E-13 N=1.036934 RS=1.2E-2 TT=38n) Ra 4 2 2.8E-2 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER www.datasheetarchive.com/files/fairchild/simulation-models/mtd3055v.lib |
Fairchild | 22/10/2012 | 1.08 Kb | LIB | mtd3055v.lib |
| FAIRCHILD SEMICONDUCTOR DMOS LIBRARY ver1.6 Feb 1997 * 2N7000 2N7000 2N7000 2N7000 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.1*{-0.0016*TEMP+1.04}} KP=0.35 THETA=0.086 Dbody 3 20 DBODY M2 1 8 6 6 INTER .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 85p Rcgd 7 4 10meg M3 7 9 1 1 INTER * 2N7000 2N7000 2N7000 2N7000 THERMAL MODEL E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} E_Tja 100 40 V www.datasheetarchive.com/files/spicemodels/misc/fsdmos.lib |
Spice Models | 04/09/2012 | 590 Kb | LIB | fsdmos.lib |
| * Library of FAIRCHILD Power MOSFETs * $Revision: 1.0 $ * $Author: HIRASUNA $ * $Date: 06 Jul 2001 10:10:36 $ * *- * * This data is intended for use by customers in the design of electrical * circuits using FAIRCHILD semiconductors. The usual care has been taken, * first, in generating the data, and second, in transcribing into the * data disk. However, no responsibility for inaccur www.datasheetarchive.com/files/spicemodels/misc/fairchild.lib |
Spice Models | 04/09/2012 | 404.19 Kb | LIB | fairchild.lib |
| 0,SystemName,EDWinXP 0,Manufacturer,Visionics 0,Copyright,Norlinvest Ltd, BVI 2005, All Rights Reserved. 1,EDWinXP - Ver 1.40,EDWXP130 EDWXP130 EDWXP130 EDWXP130.GRP,EDWinXP - Ver 1.40 2,1,0,EDWinXP - Main,EDWinXP.EXE,1,4 2,2,0,EDWinXP - Waveform Viewer,E2KDIAGR.EXE 2,3,0,EDWinXP - Live Update,E2KUPDT.EXE,1,4 2,4,0,EDWinXP - Registration Form,E2KREGFM.EXE 2,5,0,EDWinXP - Uninstaller,E2KUNINT.EXE 3,1,EDWinXP - Main Directory,sd1.chk,EDWinXP 3,2,EDWinXP - Job Files,sd2.chk,EDWinXP\job 3,3,EDWinXP - Library www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/install.lst |
Kaleidoscope | 28/06/2005 | 116.81 Kb | LST | install.lst |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| NDT3055J23Z | N/A | N-Channel Enhancement MOSFET | ||
| NDT3055L-J23Z | N/A | N-Channel Enhancement MOSFET |
| Diodes, Inc. Part | Type | Industry Part |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FQT13N06 | FQT13N06TF Buy | NDT3055 Buy | Fairchild | Close | Power MOSFET | 60V N-Channel QFET |
| FQT13N06 | FQT13N06TF Buy | NDT3055(J23Z) Buy | Fairchild | Close | Power MOSFET | 60V N-Channel QFET |
| FQT13N06 | FQT13N06 Buy | NDT3055J23Z Buy | National Semiconductor | Close | Power MOSFET | 60V N-Channel QFET |
| FQT13N06 | FQT13N06TF Buy | NDT3055L Buy | Fairchild | Close | Power MOSFET | 60V N-Channel QFET |
| FQT13N06 | FQT13N06 Buy | NDT3055L(J23Z) Buy | Fairchild | Close | Power MOSFET | 60V N-Channel QFET |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| BUK9875-100A Buy | NDT3055 Buy | Fairchild Semiconductor | Close |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| NTD3055-094G Buy | NDT3055L Buy | Fairchild Semiconductor | Close |
| NTF3055-100T1G Buy | NDT3055 Buy | Freescale Semiconductor | Close |
| NTF3055-100T1G Buy | NDT3055(J23Z) Buy | Fairchild Semiconductor | Close |
| NTF3055-100T1G Buy | NDT3055J23Z Buy | National Semiconductor | Close |
| NTF3055-100T1G Buy | NDT3055L Buy | Fairchild Semiconductor | Close |
| NTF3055-100T1G Buy | NDT3055L(J23Z) Buy | Fairchild Semiconductor | Close |
| NTF3055-100T1G Buy | NDT3055L-J23Z Buy | National Semiconductor | Close |
| NTF3055-100T1G Buy | NDT3055L-NL Buy | Fairchild Semiconductor | Close |
| NTF3055-100T1G Buy | NDT3055-NL Buy | Fairchild Semiconductor | Close |
| NTF3055-100T3G Buy | NDT3055 Buy | Fairchild Semiconductor | Close |