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ndt3055 Datasheet

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NDT3055 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor
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5 pages,
78.46 Kb

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NDT3055 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor
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8 pages,
223.15 Kb

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NDT3055 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor
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6 pages,
174.79 Kb

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NDT3055 Toshiba Power MOSFETs Cross Reference Guide
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67 pages,
161.9 Kb

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NDT3055_J23Z Fairchild Semiconductor Transistor Mosfet N-CH 60V 4A 4SOT-223 T/R
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5 pages,
78.46 Kb

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NDT3055_NL Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor
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5 pages,
78.46 Kb

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NDT3055J23Z Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor
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5 pages,
78.47 Kb

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NDT3055L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor
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8 pages,
224.99 Kb

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NDT3055L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor
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5 pages,
80.29 Kb

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NDT3055L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor
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6 pages,
176.05 Kb

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ndt3055

Catalog Datasheet Results Type PDF Document Tags
Abstract: 0 National Semiconductor September 1996 NDT3055 N-Channel Enhancement Mode Field Effect , * (J23Z) Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter NDT3055 Units , °C/W Order option J23Z for cropped center drain lead. NDT3055 Rev. D1 This Material Copyrighted By , 6 10 nC NDT3055 Rev. D1 This Material Copyrighted By Its Respective Manufacturer , Test: Pulse Width < 300ps, Duty Cycle < 2.0%. NDT3055 Rev. D1 This Material Copyrighted By Its ... OCR Scan
datasheet

7 pages,
362.07 Kb

NDT3055 datasheet abstract
datasheet frame
Abstract: N September 1996 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General , Symbol Parameter NDT3055 Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source , (Note 1) 12 癈/W * Order option J23Z for cropped center drain lead. NDT3055 Rev. D1 , = 10 V NDT3055 Rev. D1 Electrical Characteristics (T Symbol A = 25癈 unless otherwise , < 2.0%. NDT3055 Rev. D1 Typical Electrical Characteristics 3 VGS = 10V 8.0 7.0 R DS(on ... Original
datasheet

6 pages,
174.78 Kb

NDT3055 datasheet abstract
datasheet frame
Abstract: May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description , Drain-Source Voltage NDT3055 VGSS Gate-Source Voltage - Continuous ID Maximum Drain Current - , Corporation NDT3055 Rev.B Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% NDT3055 Rev.B Typical Electrical , Temperature. NDT3055 Rev.B 1000 15 I D = 4A VDS = 10V 500 20V 40V 12 CAPACITANCE (pF ... Original
datasheet

5 pages,
78.46 Kb

SOIC-16 NDT3055 NDT3055 abstract
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Abstract: May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description , Drain-Source Voltage NDT3055 VGSS Gate-Source Voltage - Continuous ID Maximum Drain Current - , Corporation NDT3055 Rev.B Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% NDT3055 Rev.B Typical Electrical , Temperature. NDT3055 Rev.B 1000 15 I D = 4A VDS = 10V 500 20V 40V 12 CAPACITANCE (pF ... Original
datasheet

8 pages,
223.16 Kb

SOIC-16 PN2222A NDT3055 F852 F63TNR CBVK741B019 NDT3055 abstract
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Abstract: PWMD CS Q1 4 NDT3055 U2 Open Circuit Protection 2 GND PWMD R5 0.05, 1/4W , Supertex MSS1278-153MXB MSS1278-153MXB NDT3055 MMBT2907A MMBT2907A ERJ-L14KF50MU ERJ-L14KF50MU ERJ-6ENF1003V ERJ-6ENF1003V ERJ-6GEYJ102V ERJ-6GEYJ102V ERJ-6ENF3403V ERJ-6ENF3403V ... Original
datasheet

4 pages,
186.1 Kb

mosfet SMD 6 PIN IC FOR PWM variable resistor 100k connection preset variable resistor 5K HV9910LG Led driver 10W schematic smd transistor HB ECJ3YB1E106M ndt3055 preset variable resistor 100k smd transistor v2 POT 100K preset 5k preset variable resistor HV9910DB4 HV9910 HV9910DB4 abstract
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Abstract: Nat i onal Semic on ducto r TM September 1996 NDT3055 N -C h a n n el E n h a n c e m e n t M o d e General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. , S S vG S S 'd T a = 25癈 unless otherw ise noted NDT3055 60 � (N o te ia ) Units V V A ... OCR Scan
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6 pages,
112.25 Kb

T 3055 NTE 3055 e 3055 t 3055 national DIODE IN 3055 NDT3055 NDT3055 abstract
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Abstract: e* National Semiconductor™ June 1996 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand , Parameter NDT3055 Units V„. Drain-Source Voltage 60 Gate-Source Voltage - Continuous ±20 Drain ... OCR Scan
datasheet

6 pages,
177.81 Kb

gstm NDT3055 L04A M0144 datasheet abstract
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Abstract: 3 2 2 2 4 3 R45 4.7K 4 SFH617A SFH617A_DIP8 Q7 1 NDT3055 GND_DIG GND_DIG ... Original
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2 pages,
58.72 Kb

220R HSR312 DSPIC33FJ16GS NDT3055 PGED1 R33 6pin RB-11 RJ11-6PIN IPD60R385CP CMP2A dsPIC33FJ16GS502 MCP1404 NCP1012-DIP7 rj116pin IRLB3036 datasheet abstract
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Abstract: Single Dual Dual Single Dual N-Chanml NDT455N NDT455N NDT453N NDT453N NDT451AN NDT451AN NDT451N NDT451N NDT3055 NDT3055L N D 10141 -20 ... OCR Scan
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1 pages,
135.95 Kb

NDC652P FDC6321C H834P datasheet abstract
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Abstract: 1.1 HUF75307T3ST HUF75307T3ST 55 Single 0.09 - - - 8.3 2.6 1.1 NDT3055 60 ... Original
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2 pages,
36.61 Kb

NDT453N FDT439N FDT457N FDT459N FQT13N06 FQT13N06L HUF75307T3ST HUF75309T3ST HUFA75309T3ST IRFM120A NDT2955 NDT3055 NDT451AN NDT452AP NDT453N abstract
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Abstract: F A I R C H I L D tm M ano M ay 1998 M ICDNDUCTOR NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description T h e s e N -C hannel en ha n ce m e n t m ode po w e r field effect tra nsistors are produced using F a irchild's proprietary, high cell density, D M O S technology. T h is v ery high de nsity process is e sp ecially tailored to m inim ize on , Voltage Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed (Note 1a) NDT3055 ... OCR Scan
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6 pages,
239.53 Kb

T3055 datasheet abstract
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*NDT3055 at Temp. Electrical Model *- .SUBCKT NDT3055 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=3.8 KP=1.2E+1 +THETA=0.1 VMAX=0.5E5 LEVEL=3) Cgs 1 5x 300p Rd 20 4 3E-2 Dds 5x 4 DDS .MODEL DDS D(M=4.4E-1 VJ=9.29E-1 29E-1 29E-1 29E-1 CJO=479p) Dbody 5x 20 DBODY .MODEL DBODY D(IS=3.5E-13 5E-13 5E-13 5E-13 20 DB1 DBLK .MODEL DBLK D(IS=1E-14 1E-14 1E-14 1E-14 CJO=.1p RS=.1) EDB DB1 0 VB1 0 1 .ENDS NDT3055 *NDT3055 (Rev.A
www.datasheetarchive.com/files/fairchild/pdfs/models actual/ndt3055.mod
Fairchild 22/08/2003 1.11 Kb MOD ndt3055.mod
*NDT3055 at Temp. Electrical Model *- .SUBCKT NDT3055 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=3.8 KP=1.2E+1 +THETA=0.1 VMAX=0.5E5 LEVEL=3) Cgs 1 5x 300p Rd 20 4 3E-2 Dds 5x 4 DDS .MODEL DDS D(M=4.4E-1 VJ=9.29E-1 29E-1 29E-1 29E-1 CJO=479p) Dbody 5x 20 DBODY .MODEL DBODY D(IS=3.5E-13 5E-13 5E-13 5E-13 20 DB1 DBLK .MODEL DBLK D(IS=1E-14 1E-14 1E-14 1E-14 CJO=.1p RS=.1) EDB DB1 0 VB1 0 1 .ENDS NDT3055 *NDT3055 (Rev.A
www.datasheetarchive.com/files/fairchild/pdfs/models/ndt3055.txt
Fairchild 22/08/2003 1.11 Kb TXT ndt3055.txt
.SUBCKT NDT3055 20 10 30 *FAIRCHILD SUBCKT NDT3055, 3 *Node 1,Drain *Node 2,Gate *Node 3,Source * Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=3.1 KP=5.8 THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m *TC=0.00656 Dds 3 4 DDS .MODEL DDS D(BV=60 M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 4E-13 4E-13 4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m *TC=0.00656 Rs 3 5 2m Ls E3 9 1 4 1 -2 .ENDS NDT3055
www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/eds_sbk/fairchld/ndt3055.sbc
Kaleidoscope 06/08/1999 0.62 Kb SBC ndt3055.sbc
*NDT3055 ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * - .SUBCKT NDT3055 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00184*TEMP+1.046}} KP={-0.011*TEMP+6.075} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m INTER E3 9 1 4 1 -2 .ENDS NDT3055 * * * NDT3055 THERMAL MODEL * - table {TIME} ; Normalized NDT3055 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002
www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/fairchild/nd/ndt3055.lib
Spice Models 29/07/2012 1.94 Kb LIB ndt3055.lib
*NDT3055 at Temp. Electrical Model *- *$ .SUBCKT MTD3055V MTD3055V MTD3055V MTD3055V 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=3.2 KP=1.2E+1 +THETA=0.1 VMAX=0.5E5 LEVEL=3) Cgs 1 5x 300p Rd 20 4 2.8E-2 Dds 5x 4 DDS .MODEL DDS D(M=4.4E-1 VJ=9.29E-1 29E-1 29E-1 29E-1 CJO=479p) Dbody 5x 20 DBODY .MODEL DBODY D(IS=3.5E-13 5E-13 5E-13 5E-13 N=1.036934 RS=1.2E-2 TT=38n) Ra 4 2 2.8E-2 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS
www.datasheetarchive.com/files/fairchild/simulation-models/mtd3055v.lib
Fairchild 22/10/2012 1.08 Kb LIB mtd3055v.lib
FAIRCHILD SEMICONDUCTOR DMOS LIBRARY ver1.6 Feb 1997 * 2N7000 2N7000 2N7000 2N7000 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.1*{-0.0016*TEMP+1.04}} KP=0.35 THETA=0.086 Dbody 3 20 DBODY M2 1 8 6 6 INTER .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 85p Rcgd 7 4 10meg M3 7 9 1 1 INTER * 2N7000 2N7000 2N7000 2N7000 THERMAL MODEL E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} E_Tja 100 40 V
www.datasheetarchive.com/files/spicemodels/misc/fsdmos.lib
Spice Models 04/09/2012 590 Kb LIB fsdmos.lib
* Library of FAIRCHILD Power MOSFETs * $Revision: 1.0 $ * $Author: HIRASUNA $ * $Date: 06 Jul 2001 10:10:36 $ * *- * * This data is intended for use by customers in the design of electrical * circuits using FAIRCHILD semiconductors. The usual care has been taken, * first, in generating the data, and second, in transcribing into the * data disk. However, no responsibility for inaccur
www.datasheetarchive.com/files/spicemodels/misc/fairchild.lib
Spice Models 04/09/2012 404.19 Kb LIB fairchild.lib
*MTD3055VL MTD3055VL MTD3055VL MTD3055VL at Temp. Electrical Model *- *$ .SUBCKT NDT3055L 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=1.8 KP=2.06E+1 +THETA=0.1 VMAX=0.5E5 LEVEL=3) Cgs 1 5x 511p Rd 20 4 3E-2 Dds 5x 4 DDS .MODEL DDS D(M=3.84E-1 84E-1 84E-1 84E-1 VJ=5.85E-1 85E-1 85E-1 85E-1 CJO=498p) Dbody 5x 20 DBODY .MODEL DBODY D(IS=5.5E-12 5E-12 5E-12 5E-12 N=1.18 RS=.1) EDB DB1 0 VB1 0 1 .ENDS NDT3055L *NDT3055L (Rev.A) 5/11/06 *ST *$
www.datasheetarchive.com/files/fairchild/simulation-models/ndt3055l.lib
Fairchild 22/10/2012 1.07 Kb LIB ndt3055l.lib
0,SystemName,EDWinXP 0,Manufacturer,Visionics 0,Copyright,Norlinvest Ltd, BVI 2005, All Rights Reserved. 1,EDWinXP - Ver 1.40,EDWXP130 EDWXP130 EDWXP130 EDWXP130.GRP,EDWinXP - Ver 1.40 2,1,0,EDWinXP - Main,EDWinXP.EXE,1,4 2,2,0,EDWinXP - Waveform Viewer,E2KDIAGR.EXE 2,3,0,EDWinXP - Live Update,E2KUPDT.EXE,1,4 2,4,0,EDWinXP - Registration Form,E2KREGFM.EXE 2,5,0,EDWinXP - Uninstaller,E2KUNINT.EXE 3,1,EDWinXP - Main Directory,sd1.chk,EDWinXP 3,2,EDWinXP - Job Files,sd2.chk,EDWinXP\job 3,3,EDWinXP - Library
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Kaleidoscope 28/06/2005 116.81 Kb LST install.lst

Shortform Datasheet Search Results

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NDT3055J23Z N/A N-Channel Enhancement MOSFET

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NDT3055L-J23Z N/A N-Channel Enhancement MOSFET

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Diodes, Inc. Cross Reference Results

Diodes, Inc. Part Type Industry Part
DMN6068SE Buy Diodes, Inc. Closest NDT3055 Buy
DMN6068SE Buy Diodes, Inc. Closest NDT3055L Buy

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
FQT13N06 FQT13N06TF Buy NDT3055 Buy Fairchild Close Power MOSFET 60V N-Channel QFET
FQT13N06 FQT13N06TF Buy NDT3055(J23Z) Buy Fairchild Close Power MOSFET 60V N-Channel QFET
FQT13N06 FQT13N06 Buy NDT3055J23Z Buy National Semiconductor Close Power MOSFET 60V N-Channel QFET
FQT13N06 FQT13N06TF Buy NDT3055L Buy Fairchild Close Power MOSFET 60V N-Channel QFET
FQT13N06 FQT13N06 Buy NDT3055L(J23Z) Buy Fairchild Close Power MOSFET 60V N-Channel QFET

NXP / Philips Cross Reference Results

NXP Semiconductor / Philips Part Industry Part Manufacturer Type Comments
BUK9875-100A Buy NDT3055 Buy Fairchild Semiconductor Close

On Semiconductor Cross Reference Results

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NTD3055-094G Buy NDT3055L Buy Fairchild Semiconductor Close
NTF3055-100T1G Buy NDT3055 Buy Freescale Semiconductor Close
NTF3055-100T1G Buy NDT3055(J23Z) Buy Fairchild Semiconductor Close
NTF3055-100T1G Buy NDT3055J23Z Buy National Semiconductor Close
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NTF3055-100T1G Buy NDT3055L-J23Z Buy National Semiconductor Close
NTF3055-100T1G Buy NDT3055L-NL Buy Fairchild Semiconductor Close
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NTF3055-100T3G Buy NDT3055 Buy Fairchild Semiconductor Close