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MRF422 MACOM RF Power Bipolar Transistor, 1-Element, Silicon, NPN, CASE 211-11, 4 PIN visit Digikey Buy

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Part : MRF422 Supplier : M/A-COM Manufacturer : Richardson RFPD Stock : 1,538 Best Price : $61.11 Price Each : $66.33
Part : MRF422MP Supplier : M/A-COM Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
Part : MRF422 Supplier : M/A-COM Manufacturer : Chip1Stop Stock : 1,550 Best Price : $94.3000 Price Each : $94.3000
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mrf422 Datasheet

Part Manufacturer Description PDF Type
MRF422 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original
MRF422 M/A-COM RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 35V 20A 211-11 Original
MRF422 M/A-COM TRANS GP BJT NPN 40V 20A 4CASE 211-11 Original
MRF422 Motorola RF POWER TRANSISTORS NPN SILICON Original
MRF422 Motorola European Master Selection Guide 1986 Scan
MRF422 Motorola NPN Silicon RF Power Transistor Scan
MRF422 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MRF422 N/A Semiconductor Master Cross Reference Guide Scan
MRF422 N/A Shortform Transistor PDF Datasheet Scan
MRF422 N/A Transistor Replacements Scan
MRF422 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
MRF422MP Advanced Semiconductor Transistor Original
MRF422-MP Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original

mrf422

Catalog Datasheet MFG & Type PDF Document Tags

MRF422

Abstract: MRF422 4.2-336 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA ELECTRICAL CHARACTERISTICS - , MRF422 4.2-337 Pout, OUTPUT POWER (W ATTS PEP) f, FREQUENCY (MHz) Figure 2. Output Power versus , Operating Area Figure 7. Series Input Impedance MRF422 4.2-338 MOTOROLA WIRELESS SEMICONDUCTOR , SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF422 4.2-339
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1N4997 56-590-65/3B 150WPEP

MRF422

Abstract: 28v 150w 30MHZ MRF422 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V M/A-COM Products , ) or information contained herein without notice. MRF422 The RF Line NPN Silicon Power Transistor , contained herein without notice. MRF422 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V , . MRF422 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V M/A-COM Products Released - , . changes to the product(s) or information contained herein without notice. MRF422 The RF Line NPN
M/A-COM
Original
28v 150w 30MHZ 28v 30MHZ MRF422 datasheet

MRF422

Abstract: 170 680 pF arco 469 MOTOROLA Order this document by MRF422/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high­power linear , °C) (continued) REV 6 ©MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF422 1 ELECTRICAL , /3B Figure 1. 30 MHz Test Circuit Schematic MRF422 2 MOTOROLA RF DEVICE DATA 25 VCC = , .26 Figure 7. Series Input Impedance MRF422 3 10 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF
Motorola
Original
170 680 pF arco 469 MRF422D MRF422/D
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF422 NPN Silicon RF Power , )EBO 'C E S 35 85 85 3.0 - 20 Vdc Vdc Vdc Vdc m Adc (continued) MOTOROLA RF DEVICE DATA MRF422 , MRF422 2-348 MOTOROLA RF DEVICE DATA Pout, OUTPUT POWER (WATTS PEP) Figure 2. Output Power , Figure 7. Series Input Impedance MOTOROLA RF DEVICE DATA MRF422 Rout, PARALLEL EQUIVALENT , versus Frequency 2 MRF422 2-350 MOTOROLA RF DEVICE DATA -
OCR Scan

MRF422

Abstract: with 30:1 VSWR MRF422 · · 150 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON CASE 211-11 , MOTOROLA RF DEVICE DATA MRF422 2-501 ELECTRICAL CHARACTERISTICS - continued (Tq = 25 C unless , Circuit Schematic MRF422 2 -502 MOTOROLA RF DEVICE DATA Pout, OUTPUT POWER (WATTS PEP) Figure , Distortion versus Output Power Ic. COLLECTOR CURRENT (AMP) MOTOROLA RF DEVICE DATA MRF422 2 -5 0 3 , Figure 9. Output Capacitance versus Frequency MRF422 2 -5 0 4 MOTOROLA RF DEVICE DATA
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MRF422MP

Abstract: MRF422 MRF422/MP NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP. PACKAGE STYLE .500 4L FLG MAXIMUM RATINGS I 20 A V 40 V PDISS 290 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C JC 0.6 °C/W 1 = COLLECTOR 3 = BASE 2 & 4 = EMITTER NONE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM
Advanced Semiconductor
Original
ASI MRF422 MRF422/MP

mrf422

Abstract: mallory 150 series :1 VSWR MAXIMUM RATINGS MRF422 150 W(PEF), 3GMHz ' ~ RF POWER TRANSISTORS NPN SILICON Rating , data MRF422 2-501 i ELECTRICAL CHARACTERISTICS â'" continued (Tq = 25°C unless otherwise noted , #56-590-65/38 MRF422 2-502 MOTOROLA RF DEVICE DATA 280 240 200 160 120 80 40 . j ! ! -Vcc = 28V - , 6. DC Safe Operating Area Figure 7. Series Input Impedance. motorola rf device data MRF422 2-503
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mallory 150 series

MRF422

Abstract: MRF422 150 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating C ollector-Em , MRF422 2-444 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS - continued Characteristic ON , . 30 MHz Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF422 2-445 Pout, OUTPUT POWER , Figure 7. Series Input Impedance MRF422 2-446 MOTOROLA RF DEVICE DATA Rout, PARALLEL EQUIVALENT , Capacitance versus Frequency MOTOROLA RF D EVICE DATA MRF422 2-447
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MRF422

Abstract: MRF422 datasheet MRF422 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. PACKAGE STYLE .500 4L FLG MAXIMUM RATINGS I 20 A V 40 V PDISS 290 W @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +150 C JC 0.6 C/W O O O O O O 1 = COLLECTOR 3 = BASE 2 & 4 = EMITTER NONE CHARACTERISTICS O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM
Advanced Semiconductor
Original
420 NPN Silicon RF Transistor

MRF422MP

Abstract: S0480 2-617 MRF422, MRF422MP F IG U R E 2 - O U T P U T POW ER v«r«us IN P U T POWER Pout. OUTPUT , DEVICE DATA 2-618 MRF422, MRF422MP F IG U R E 9 - O U T P U T C A P A C IT A N C E F IG U R E 8 - , Dissipation @ T q = 2 5°C Derate above 2 5°C Storage Tem perature Range MRF422MP is for ordering a HFE matched , n c tio n to Case S ym b ol R 0JC Max 0.6 U n it °c/w MOTOROLA RF DEVICE DATA 2-616 MRF422, MRF422MP ELECTRICAL. CHARACTERISTICS ( T ç = 2 5°C unless oth e rw ise note d.) S ym bol M in T yp
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S0480 S0-480

b0745

Abstract: 2n3772 solitron SD1450 MRF422 MRF422 163-04A 163-04SPC 2N6257 163·04 163-04 MJ6257 1723-0405 1723-0410 164-04A 164-04SPC
Short Form Catalog
Original
2SD1213R b0745 2n3772 solitron rcs258 MRF428A BDX40 RCS25 SDT8045 J02053 8UP30 2SD1213Q 2SC2510

MRF648

Abstract: TPV3100 MRF255 MRF275G MRF316 MRF317 MRF321 MRF323 MRF325 MRF327 MRF392 MRF393 MRF421 MRF422 MRF429
STMicroelectronics
Original
MHW916 MRF188 MRF224 MRF240 MRF240A MRF646 MRF648 TPV3100 TP9383 TPV-3100 MRF238 MOTOROLA SD1393 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946

MRF485

Abstract: MRF477 PEP'CW 2.53 15 28 21 1-11 MRF422 150 PEP'CW 15 10 28 211-11 MRF427 25 PEP'CW 0.40 18 50 211-11 MRF427A
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MRF476 IMRF479 MRF477 MRF460 MRF475 MRF412 MRF485 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 IMRF433

adc 809

Abstract: ferroxcube ferrite beads Order this document by MRF422/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high­power linear amplifier from 2.0 to 30 MHz. · Specified 28 Volt, 30 MHz Characteristics - Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40% 150 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON · Intermodulation Distortion @ 150 W (PEP) - IMD = ­30 dB (Min) · 100% Tested for Load Mismatch at all Phase
M/A-COM
Original
adc 809 ferroxcube ferrite beads CASE-211-11 MRF422 ferroxcube data sheet for ferrite beads
Abstract: MRF422 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)85 I(C) Max. (A)20 Absolute Max. Power Diss. (W)290 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)20m× @V(CBO) (V) (Test Condition)28 V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.30Ã' @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test American Microsemiconductor
Original

Stackpole 57-3238

Abstract: MPC1000 -MHz band. One of Motorola's new high-power transistors developed for single-sideband, MRF422, is used in this application. Like all transistors in its family of devices, MRF422 combines single-chip
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MPC1000 MCI723 Stackpole 57-3238 Toroid 57-9322 57-1845-24b Indiana general ferrite core Stackpole ferrite 30-MH EB27A/D I111H

2N5070

Abstract: 2N6370 145A07 MRF427 25 PEP 12 50 145A-08 2N5941 40 PEP 13 28 211-07 2N5942 80 PEP 10 28 211-04 MRF422 150
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MRF816 MRF817 MRF818 MRF821 MRF823 MRF835 2N5070 2N6370 MRF432 mrf433 EB-19 EB-26

KT827B

Abstract: BDX61 POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V (BR)CEO PD Max hFE fT (Hz) ·CBO Max toN Max (8) r (CE)sat Toper (A) Of) ON) Min (A) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) MRF422 MRF422 PT9780 2N2739 2N2745 2N2751 163-05 164-05 2N1823 2N1823 Diode Trans Motorola Optek Tech See Index See Index See Index Powerex Inc Powerex Inc AmerMicroSC Hi-Tron Space Power See Index Motorola See
Solid State Devices
Original
KT827B BDX61 KT935A kt827 TO3VAR package R-5/16

MRF485

Abstract: mrf477 PEP'CW 2.53 15 28 21 1-11 MRF422 150 PEP'CW 15 10 28 211-11 MRF427 25 PEP'CW 0.40 18 50 211-11 MRF427A
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MRF464 MRF453 MRF497 MRF482 Motorola transistors MRF476 Motorola transistors MRF455 MRF455 IMRF410 MRF401 MRF426 IVIRF486 T0-220AB

2SC636

Abstract: 2sc635 MRF421 MRF422 MRF429 MRF448 MRF454 MRF455 MRF644 MRF650 MRF653 MRF844 MRF847 MRF859 MRF860
STMicroelectronics
Original
2SC1804 2SC2100 2SC2290 2SC2782 2SC2879 2SC2897 2SC636 2sc635 MHW820-1 TP3008 SD1477 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729
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