500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Direct from the Manufacturer

Part Manufacturer Description PDF & SAMPLES
ISL23318UFUZ-TK Intersil Corporation Single, 128-taps Low Voltage Digitally Controlled Potentiometer (XDCP™); MSOP10, uTQFN10; Temp Range: -40° to 125°C
ISL85418FRZ-T Intersil Corporation Wide VIN 800mA Synchronous Buck Regulator; DFN12; Temp Range: -40° to 125°C
ISL32603EFBZ-T Intersil Corporation 1.8V to 3.3V, Micro-Power, ±15kV ESD, +125°C, Slew Rate Limited, RS-485/RS-422 Transceivers; MSOP8, SOIC8; Temp Range: -40° to 125°C
ISL12027AIB27Z Intersil Corporation Real Time Clock/Calendar with EEPROM; SOIC8, TSSOP8; Temp Range: -40° to 85°C
ISL61851JIBZ-T Intersil Corporation Dual USB Port Power Supply Controller - Covering the Industrial Temperature Range of -40°C to +85°C; DFN10, DFN8, SOIC8; Temp Range: -40° to 85°C
ISL61853MCRZ-T Intersil Corporation Dual USB Port Power Supply Controller - Covering the Commercial Temperature Range of 0°C to +70°C; DFN10, DFN8, SOIC8; Temp Range: 0° to 70°

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 40VMOSFETSAMPLEKIT Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 60VMOSFETSAMPLEKIT Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : SILIRCMOSFETSOT2310N10 Supplier : GARRETT ELECTRONICS Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : SILIRCMOSFETSOT2310N5 Supplier : GARRETT ELECTRONICS Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : NXPMOSFET-DESIGNKIT Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

mosfet to3

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4065, REV. - SHD280502 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 100-VOLT, 0.055-OHM MOSFET IN A HERMETIC TO-3 / TO-204AA PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID IDM TOP/TSTG R JC PD ¡ @ TC = 25C @ TC = 100C PULSED DRAIN , DEVICE TYPE MOSFET TO-3 / TO-204 AA PACKAGE PIN 1 SOURCE PIN 2 GATE PIN 3 DRAIN 221 WEST Sensitron Semiconductor
Original
TO-204aa pinout MC 4065 A
Abstract: VOLTS 0.055 Q N-CHANNEL POWER MOSFET TO-3 MAXIMUM RATINGS ä 2 CHARACTERISTIC SYMBOL VALUE UNIT , 150 114 Watts PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: SOURCE PIN 2: GATE CASE: DRAIN 0.450* 0.250 -
OCR Scan
IRF150 mosfet to-3 IRF150 To3 package 670-SSDI F00045
Abstract: POWER MOSFET TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage Vds , Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55'C PD 250 190 Watts PACKAGE OUTLINE:TO-3 -
OCR Scan
IXTH40N30 mosfet 4800 SFF40N30/3 F00151
Abstract: POWER MOSFET TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage Vds 500 , Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PD 250 190 Watts PACKAGE OUTLINE:TO-3 PIN OUT -
OCR Scan
IXTH24N50 SFF24N50/3 SFF24N50/3T F00175
Abstract: available Replaces: IXTH10N100 Types 10 AMP 1000 VOLTS 1.2 Q N-CHANNEL POWER MOSFET TO-3 MAXIMUM RATINGS , TC=55°C pd 250 190 Watts PACKAGE OUTLINE:TO-3 NOTE: All specifications are subject to change -
OCR Scan
ssdi F00187
Abstract: . N-CHANNEL POWER MOSFET TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage Vds , Device Dissipation @ TC=25'C Total Device Dissipation @ TC=55°C pd 250 190 Watts PACKAGE OUTLINE: TO-3 -
OCR Scan
IXTH50N20 SFF50N20/3 F00139
Abstract: SEME BFD88 LAB 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 ­ Gate Semelab
Original
Abstract: -11 AMP â 200 VOLTS 0.50Q P-CHANNEL POWER MOSFET TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE , 125 95 Watts PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: SOURCE PIN 2: GATE CASE DRAIN 0.312' mn i_ Â -
OCR Scan
IRF9240 200 Amp mosfet SFF9240/3 FP0009A VGS--10V IS--11
Abstract: N-CHANNEL POWER MOSFET TO-3 PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: SOURCE PIN 2: GATE CASE: DRAIN 0.450 -
OCR Scan
IXTH75N10 SFF75N10/3 F00163
Abstract: SEME BFD63 LAB 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 ­ Gate Semelab
Original
380ms
Abstract: SEME BFD82 LAB 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 ­ Gate Semelab
Original
Abstract: SEME BFD71 LAB 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 ­ Gate Semelab
Original
Abstract: BFD77 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 ­ Gate Pin Semelab
Original
Abstract: screening available Replaces: IRF130 Types J. 14 AMP 100 VOLTS 0.16 Q N-CHANNEL POWER MOSFET TO-3 , Energy eas 75 mJ Repetitive Avalanche Energy ear 7.5 mJ PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: GATE -
OCR Scan
SFF130/3
Abstract: AMP -100 VOLTS 0.20£2 P-CHANNEL POWER MOSFET TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT , PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: SOURCE PIN 2: GATE CASE: DRAIN 1 1QX. 1 -
OCR Scan
IRF9140 91SS VDS-80 SFF9140/3
Abstract: 2 1 3 PINOUT TABLE DEVICE TYPE MOSFET TO-3 / TO-204 AA PACKAGE PIN 1 SOURCE PIN 2 , SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4066, REV.- SHD280504 FEATURES: 400 Volt, 0.3 Ohm, 14A MOSFET Low RDS (on) Electrically Equivalent to IRF350 Series HERMETIC POWER MOSFET N-CHANNEL MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT @ TC = 25C ON-STATE DRAIN CURRENT @ TC = 100C PEAK DRAIN CURRENT @ TC = 25C OPERATING AND STORAGE TEMPERATURE TOTAL DEVICE Sensitron Semiconductor
Original
SHD226504
Abstract: SENSITRON SEMICONDUCTOR SHD280502 TECHNICAL DATA DATA SHEET 4065, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 100-VOLT, 0.055-OHM MOSFET IN A HERMETIC TO-3 / TO-204AA PACKAGE. MAXIMUM RATINGS MIN. - TYP. - IDM TOP/TSTG R JC PD -55 - BVDSS - MAX. 20 38 24 150 +150 0.83 150 Amps(pk) C C/W Watts 100 - - Volts VGS(TH) 2.0 - , DIMENSIONS: in Inches 2 1 3 DEVICE TYPE MOSFET TO-3 / TO-204 AA PACKAGE PIN 1 SOURCE Sensitron Semiconductor
Original
Abstract: .(10) = PDmax = chmax i i MOSFET Tc = 25°C (9) MOSFET (2) c c MOSFET TO-3(L , MOSFET 5-1 2009-03-31 MOSFET: 5. 5.1 MOSFET (PDmax) MOSFET () (Ta) MOSFET (Tchmax) () (ch-a) Rth (1) T T - Ta - Tc PDmax (Tc ) = chmax .(1) PDmax (Ta ) = chmax ch-a ch-c MOSFET 5.1 i Tch i : () Tc Tch P s , .(4) (4) MOSFET Tch Tchmax 5-3 2009-03-31 MOSFET: 5.2 MOSFET 5.2 Rm -
Original
YG6260 2-10P1B 2SK2698 2SK2837 2-16C1B 2-21F1B 2-10L1B 2-10R1B
Abstract: TYPE MOSFET TO-3 / TO-204 AA PACKAGE PIN 1 SOURCE PIN 2 GATE PIN 3 DRAIN 221 WEST , SENSITRON SEMICONDUCTOR SHD280504 TECHNICAL DATA DATA SHEET 4066, REV.- HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.3 Ohm, 14A MOSFET Low RDS (on) Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. ELECTRICAL CHARACTERISTICS CHARACTERISTIC DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 1.0mA STATIC Sensitron Semiconductor
Original
IRF350 and its equivalent
Abstract: SEME SML5020AN LAB 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50 Semelab
Original
SEM-E
Showing first 20 results.