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V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
HIP6601BECBZA Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HIP6603BECBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ICL7667CBAZA-T Intersil Corporation Dual Power MOSFET Driver; PDIP8, SOIC8; Temp Range: 0° to 70° visit Intersil Buy
IS0-2100ARH-Q Intersil Corporation 1.5A HALF BRDG BASED MOSFET DRIVER, UUC16, GREEN, DIE-16 visit Intersil

mosfet to3

Catalog Datasheet MFG & Type PDF Document Tags

TO-204aa pinout

Abstract: MC 4065 A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4065, REV. - SHD280502 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 100-VOLT, 0.055-OHM MOSFET IN A HERMETIC TO-3 / TO-204AA PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID IDM TOP/TSTG R JC PD ¡ @ TC = 25C @ TC = 100C PULSED DRAIN , DEVICE TYPE MOSFET TO-3 / TO-204 AA PACKAGE PIN 1 SOURCE PIN 2 GATE PIN 3 DRAIN 221 WEST
Sensitron Semiconductor
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TO-204aa pinout MC 4065 A

mosfet to-3

Abstract: IRF150 VOLTS 0.055 Q N-CHANNEL POWER MOSFET TO-3 MAXIMUM RATINGS ä 2 CHARACTERISTIC SYMBOL VALUE UNIT , 150 114 Watts PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: SOURCE PIN 2: GATE CASE: DRAIN 0.450* 0.250
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OCR Scan
IRF150 mosfet to-3 IRF150 To3 package mosfet to3 670-SSDI F00045

mosfet to-3

Abstract: IXTH40N30 POWER MOSFET TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage Vds , Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55'C PD 250 190 Watts PACKAGE OUTLINE:TO-3
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OCR Scan
IXTH40N30 mosfet 4800 SFF40N30/3 F00151

IXTH24N50

Abstract: POWER MOSFET TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage Vds 500 , Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PD 250 190 Watts PACKAGE OUTLINE:TO-3 PIN OUT
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OCR Scan
IXTH24N50 SFF24N50/3 SFF24N50/3T F00175

mosfet to-3

Abstract: ssdi available Replaces: IXTH10N100 Types 10 AMP 1000 VOLTS 1.2 Q N-CHANNEL POWER MOSFET TO-3 MAXIMUM RATINGS , TC=55°C pd 250 190 Watts PACKAGE OUTLINE:TO-3 NOTE: All specifications are subject to change
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OCR Scan
ssdi F00187

IXTH50N20

Abstract: . N-CHANNEL POWER MOSFET TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage Vds , Device Dissipation @ TC=25'C Total Device Dissipation @ TC=55°C pd 250 190 Watts PACKAGE OUTLINE: TO-3
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OCR Scan
IXTH50N20 SFF50N20/3 F00139

BFD88

Abstract: SEME BFD88 LAB 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 ­ Gate
Semelab
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200 Amp mosfet

Abstract: IRF9240 -11 AMP â 200 VOLTS 0.50Q P-CHANNEL POWER MOSFET TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE , 125 95 Watts PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: SOURCE PIN 2: GATE CASE DRAIN 0.312' mn i_ Â
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OCR Scan
IRF9240 200 Amp mosfet SFF9240/3 FP0009A VGS--10V IS--11

IXTH75N10

Abstract: N-CHANNEL POWER MOSFET TO-3 PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: SOURCE PIN 2: GATE CASE: DRAIN 0.450
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OCR Scan
IXTH75N10 SFF75N10/3 F00163

BFD63

Abstract: 380ms SEME BFD63 LAB 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 ­ Gate
Semelab
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380ms

BFD82

Abstract: SEME BFD82 LAB 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 ­ Gate
Semelab
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BFD71

Abstract: SEME BFD71 LAB 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 ­ Gate
Semelab
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Abstract: BFD77 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 ­ Gate Pin Semelab
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IRF130

Abstract: screening available Replaces: IRF130 Types J. 14 AMP 100 VOLTS 0.16 Q N-CHANNEL POWER MOSFET TO-3 , Energy eas 75 mJ Repetitive Avalanche Energy ear 7.5 mJ PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: GATE
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OCR Scan
SFF130/3

91SS

Abstract: VDS-80 AMP -100 VOLTS 0.20£2 P-CHANNEL POWER MOSFET TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT , PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: SOURCE PIN 2: GATE CASE: DRAIN 1 1QX. 1
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OCR Scan
IRF9140 91SS VDS-80 SFF9140/3

SHD280504

Abstract: 2 1 3 PINOUT TABLE DEVICE TYPE MOSFET TO-3 / TO-204 AA PACKAGE PIN 1 SOURCE PIN 2 , SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4066, REV.- SHD280504 FEATURES: 400 Volt, 0.3 Ohm, 14A MOSFET Low RDS (on) Electrically Equivalent to IRF350 Series HERMETIC POWER MOSFET N-CHANNEL MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT @ TC = 25C ON-STATE DRAIN CURRENT @ TC = 100C PEAK DRAIN CURRENT @ TC = 25C OPERATING AND STORAGE TEMPERATURE TOTAL DEVICE
Sensitron Semiconductor
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SHD226504

MC 4065 A

Abstract: mosfet to-3 SENSITRON SEMICONDUCTOR SHD280502 TECHNICAL DATA DATA SHEET 4065, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 100-VOLT, 0.055-OHM MOSFET IN A HERMETIC TO-3 / TO-204AA PACKAGE. MAXIMUM RATINGS MIN. - TYP. - IDM TOP/TSTG R JC PD -55 - BVDSS - MAX. 20 38 24 150 +150 0.83 150 Amps(pk) C C/W Watts 100 - - Volts VGS(TH) 2.0 - , DIMENSIONS: in Inches 2 1 3 DEVICE TYPE MOSFET TO-3 / TO-204 AA PACKAGE PIN 1 SOURCE
Sensitron Semiconductor
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2SK2837

Abstract: 2SK2698 .(10) = PDmax = chmax i i MOSFET Tc = 25°C (9) MOSFET (2) c c MOSFET TO-3(L , MOSFET 5-1 2009-03-31 MOSFET: 5. 5.1 MOSFET (PDmax) MOSFET () (Ta) MOSFET (Tchmax) () (ch-a) Rth (1) T T - Ta - Tc PDmax (Tc ) = chmax .(1) PDmax (Ta ) = chmax ch-a ch-c MOSFET 5.1 i Tch i : () Tc Tch P s , .(4) (4) MOSFET Tch Tchmax 5-3 2009-03-31 MOSFET: 5.2 MOSFET 5.2 Rm
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YG6260 2-10P1B 2SK2837 2SK2698 2-16C1B 2-21F1B 2-10L1B 2-10R1B

SHD280504

Abstract: IRF350 TYPE MOSFET TO-3 / TO-204 AA PACKAGE PIN 1 SOURCE PIN 2 GATE PIN 3 DRAIN 221 WEST , SENSITRON SEMICONDUCTOR SHD280504 TECHNICAL DATA DATA SHEET 4066, REV.- HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.3 Ohm, 14A MOSFET Low RDS (on) Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. ELECTRICAL CHARACTERISTICS CHARACTERISTIC DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 1.0mA STATIC
Sensitron Semiconductor
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IRF350 and its equivalent

SML5020AN

Abstract: SEM-E SEME SML5020AN LAB 4TH GENERATION MOSFET TO­3 (TO­204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N­CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50
Semelab
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SEM-E
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