500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER ri Buy
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver ri Buy
FQPF18N20V2YDTU Fairchild Semiconductor Corporation TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB(FP) ri Buy

mosfet ratings

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: -252.A UT4810D UT4810D Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-252 QW-R502-252.A UT4810D UT4810D Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 30 Drain-Source Voltage VDSS V 30 , UNISONIC TECHNOLOGIES CO., LTD UT4810D UT4810D Power MOSFET N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE DESCRIPTION SOP-8 As trench FET Power MOSFETS, N-channel MOSFET with schottky diode ... Unisonic Technologies
Original
datasheet

5 pages,
191.35 Kb

ut4810d-s08-r all mosfet equivalent book mosfet nA idss mosfet vgs 5v 10A Schottky MOSFET with Schottky Diode schottky diode 100A power mosfet 500 A POWER MOSFET Rise Time 1 ns mosfet with schottky body diode 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET dynamic parameters UT4810D static characteristics of mosfet UT4810D UT4810D UT4810D TEXT
datasheet frame
Abstract: 1 of 6 VER.A UT4810D UT4810D  Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 VER.A UT4810D UT4810D  Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 30 Drain-Source Voltage VDSS V 30 , UNISONIC TECHNOLOGIES CO., LTD UT4810D UT4810D Power MOSFET N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE  DESCRIPTION SOP-8 As trench FET Power MOSFETS, N-channel MOSFET with schottky ... Unisonic Technologies
Original
datasheet

5 pages,
218.21 Kb

UT4810D TEXT
datasheet frame
Abstract: dV/dt Ratings for Low Voltage and High Voltage Power MOSFET Fei Wang , Wei Wang, Anup Bhalla 1 , possibility of MOSFET failure, and is the reason for the dV/dt ratings in the datasheet. All AOS high voltage , other words, dV/dt ratings add no benefit to the datasheet. 2.1 Bipolar Turn-on: The Power MOSFET , and ratings. Voltage ramp and diode recovery related dV/dt and avalanche breakdown (UIS) are explained and the inter-relationship of these three ratings are discussed in this article. 2 ... Alpha & Omega Semiconductor
Original
datasheet

11 pages,
772.39 Kb

high voltage mosfet AOT1N60 MOSFET cross for bipolar junction diode used for AO4468 uis test N mosfet 100v 500A TEXT
datasheet frame
Abstract: Gate-Source Voltage Preliminary SYMBOL VDSS VGSS Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RATINGS UNIT 60 V ±20 V TC=25°C (Note 2) 50 A Continuous, VGS at 10V ID , UNISONIC TECHNOLOGIES CO., LTD UFZ44 UFZ44 Preliminary Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFZ44 UFZ44 is an N-channel mode Power MOSFET, using UTC's advanced technology , maximum ratings are those values beyond which the device could be permanently damaged. 1. Absolute maximum ... Unisonic Technologies
Original
datasheet

7 pages,
202.69 Kb

UFZ44 TEXT
datasheet frame
Abstract: tend to drive MOSFET selection more than maximum current ratings will. The voltage being switched also , The ispPAC-POWR1208's high-voltage MOSFET drivers were designed specifically to drive N-channel , configuration. Figure 15-1. N-Channel MOSFET Used as Positive Supply Switch + Voltage Drop! - Supply V , turn on the MOSFET and connect the load to the power supply, the MOSFET's gate terminal must be raised positive with respect to the MOSFET's source terminal. For example, if the power supply provides 3.3V, and ... Lattice Semiconductor
Original
datasheet

8 pages,
63.65 Kb

Si7445DP POWR1208 Si6475DQ FDS6064N3 Si7858DP SUB85N02-03 SUM110N03-03P mosfet 23 Tsop-6 IRF7410 IRF7410 equivalent Diode zener smd 152 sot-23 IRF6601 Si2314EDS an6048 AN6048 MBT50P03HDL AN6048 FDS6679 AN6048 IRF3716 AN6048 irlm2502 AN6048 how mosfets connect parallel AN6048 AN6048 AN6048 TEXT
datasheet frame
Abstract: MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS , RATINGS 62.5 83 3.47 2.5 UNIT °С/W °С/W 3 of 9 QW-R502-806 QW-R502-806.E 4N60K 4N60K Power MOSFET , UNISONIC TECHNOLOGIES CO., LTD 4N60K 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N60K 4N60K is a high voltage power MOSFET and is designed to have better characteristics , avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power ... Unisonic Technologies
Original
datasheet

9 pages,
368.25 Kb

4N60K TEXT
datasheet frame
Abstract: UNISONIC TECHNOLOGIES CO., LTD UF840 UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high , Tube Tube Tube Tube Tube Tube Tape Reel 1 of 9 QW-R502-047 QW-R502-047.H UF840 UF840  Power MOSFET , TECHNOLOGIES CO., LTD www.unisonic.com.tw MARKING 2 of 9 QW-R502-047 QW-R502-047.H UF840 UF840  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT ... Unisonic Technologies
Original
datasheet

9 pages,
466.68 Kb

UF840 TEXT
datasheet frame
Abstract: Power MOSFET Maximum Ratings Power MOSFET in Detail 3. Maximum Ratings 3.1 Definition The maximum current, voltage, and allowable power dissipation are specified as maximum ratings for power MOSFETs. When designing a circuit, it is very important to understand the maximum ratings , . 3.5 Power Ratings The power dissipation in a power MOSFET is converted into thermal energy which , of time. The maximum ratings are the values which must not be exceeded to ensure the power MOSFETâ ... Toshiba
Original
datasheet

10 pages,
162.39 Kb

TEXT
datasheet frame
Abstract: the power MOSFET's life and reliability. Note that the maximum ratings mean the absolute maximum , maximum ratings include current for power MOSFET's drain, voltage between each pair of pins, power , bipolar transistor. 3.5 Power Ratings The power dissipation in a power MOSFET is converted into , the maximum ratings of the MOSFET. Previously, a surge absorption circuit was required to protect the , [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1 ... Original
datasheet

83 pages,
1369.46 Kb

2SK2837 equivalent transistor 2sk 2SK2782 2SK2698 2SK2610 2SK1352 Transistor TOSHIBA 2SK toshiba POWER MOS FET 2sj 2sk toshiba lateral mos TPCS8201 equivalent 2sk2837 mosfet MOSFET TOSHIBA 2Sj equivalent 2sk2698 mosfet transistor 2sk MOSFET TOSHIBA 2SK TEXT
datasheet frame
Abstract: Avalanche capability and ratings Physics of avalanche breakdown As the voltage of a power MOSFET is , Source Gate Power MOSFET Basics N+ P-body Table of Contents 1. 2. 3. 4. 5. 6. 7 , Forward Voltage Body Diode Reverse Recovery Avalanche capability and ratings dV/dt ratings Thermal Resistance Characterization Power Dissipation Safe-Operating Area Current Ratings N+ Substrate Drain Figure 1b: Planar MOSFET Structure 2. Breakdown Voltage In most power MOSFETs the N+ source and ... Alpha & Omega Semiconductor
Original
datasheet

10 pages,
433.26 Kb

10-15V MOS-006 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
The IRL3103S IRL3103S is used as the upper control device offering the same MOSFET ratings (30-V, 0.014-ohm of the latest in Gen 5 MOSFET and FETKY TM component technologies in the shortest possible time. 5 HEXFETs and new FETKY TM . "The IRL3103D1S IRL3103D1S FETKY TM is the industry's first MOSFET and conduction and improving performance. The IRL3103D1S IRL3103D1S offers a 30-V, 0.014-ohm n-channel MOSFET which can be manufacture the voltage regulator module (VRM). Data sheets for the turnkey specification, power MOSFET, and
/datasheets/files/international-rectifier/docs/wcd00001/wcd001cb.htm
International Rectifier 06/10/1998 8.54 Kb HTM wcd001cb.htm
, Mosfet, IPM, ASIPM IGBT Chip Technology di/dt Ratings Application , DIP-IPM MOS Gate Devices: IGBT, MOSFET, IPM, ASIPM Device Selection, Ratings and (DARLINGTON) CUSTOM MODULE PACKING MOSFET   ALL View Selection, IGBT Chip Technology, Ratings and Characteristics A Low Inductance, High Package Technology, Ratings and Chratacteristics A New Punch-Thru IBGT Having a New
/datasheets/files/powerex/appnotes.html
Powerex 07/07/2003 178.64 Kb HTML appnotes.html
Compared with a MOSFET With Similar Ratings It is possible to replace the MOSFET with an IGBT and conduction losses. In a power MOSFET, the on-resistance is proportional to the breakdown voltage raised with the switching speed of a power MOSFET an optimal solid state switch would exist. The insulated similar to that of a double diffused (DMOS) power MOSFET ( Figure 2 ). An IGBT is in fact a spin-off from power MOSFET technology. One difference between a MOSFET and an IGBT is the substrate of the
/datasheets/files/motorola/design-n/ppd/html/psvol2-1/art01.htm
Motorola 25/11/1996 8.18 Kb HTM art01.htm
Application fields and today's application limits of IGBT and MOSFET power modules 13 1.2 Power MOSFET and IGBT 14 1.2.1 Different structures and New developments in MOSFET and IGBT technology 35 1.3 94 2 Datasheet parameters for MOSFET, IGBT, MiniSKiiP- and SKiiPPACK modules 97 2.1.2 Maximum ratings and characteristics 99
/datasheets/files/semikron/skcweb/ru/applica_ru/applica_help_1.html
Semikron 10/05/2004 41.17 Kb HTML applica_help_1.html
limits of IGBT and MOSFET power modules 13 1.2 Power MOSFET 29 1.2.4 New developments in MOSFET and IGBT technology Datasheet parameters for MOSFET, IGBT, MiniSKiiP- and SKiiPPACK modules 2.1 97 2.1.2 Maximum ratings and characteristics 99 2.2 Power MOSFET modules [264], [265] 99 2.2.1
/datasheets/files/semikron/skcweb/ru/applica_ru/applica_help.html
Semikron 10/05/2004 41.08 Kb HTML applica_help.html
Application fields and today's application limits of IGBT and MOSFET power modules 13 1.2 Power MOSFET and IGBT 14 1.2.1 Different IGBTs 29 1.2.4 New developments in MOSFET and IGBT Datasheet parameters for MOSFET, IGBT, MiniSKiiP- and SKiiPPACK modules 2.1 97 2.1.2 Maximum ratings and characteristics 99
/datasheets/files/semikron/skcweb/e/applica/applica_help.html
Semikron 10/05/2004 40.21 Kb HTML applica_help.html
limits of IGBT and MOSFET power modules 13 1.2 Power MOSFET 29 1.2.4 New developments in MOSFET and IGBT technology Datasheet parameters for MOSFET, IGBT, MiniSKiiP- and SKiiPPACK modules 2.1 97 2.1.2 Maximum ratings and characteristics 99 2.2 Power MOSFET modules [264], [265] 99 2.2.1
/datasheets/files/semikron/skcweb/br/applica_br/applica_help.html
Semikron 10/05/2004 39.45 Kb HTML applica_help.html
Application fields and today's application limits of IGBT and MOSFET power modules 13 1.2 Power MOSFET and IGBT 14 1.2.1 Different IGBTs 29 1.2.4 New developments in MOSFET and IGBT Datasheet parameters for MOSFET, IGBT, MiniSKiiP- and SKiiPPACK modules 2.1 97 2.1.2 Maximum ratings and characteristics 99
/datasheets/files/semikron/skcweb/i/applica_i/applica_help.html
Semikron 10/05/2004 40.32 Kb HTML applica_help.html
ratings (70A). International Rectifier advances the art of HEXFET® Power MOSFET Gen 5 HEXFET Power MOSFET Features & Benefits Benchmark low voltage HEXFET® Power MOSFET. Opportunity to maximize power and optimize performance. R DS (on) improvements up to 65% over previous technologies. Higher avalanche energy ratings than other Gen 5 HEXFET ® Power MOSFET Manufacturing Process Four-Mask Process International
/datasheets/files/international-rectifier/docs/wcd0000d/wcd00d97.htm
International Rectifier 06/10/1998 7.28 Kb HTM wcd00d97.htm
Data Sheet Abstract: TRF7003 TRF7003:MOSFET POWER AMPLIFIER TRF7003 TRF7003 MOSFET POWER AMPLIFIER SLWS058B SLWS058B - APRIL 1997 - REVISED MARCH 1998 features (MOSFET) manufactured using the Texas Instruments RFMOS RFMOS is a trademark of Texas Instruments power-added efficiency (PAE). absolute maximum ratings over operating free-air temperature range (unless under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only
/datasheets/files/texas-instruments/sc/psheets/abstract/datasht/slws058b.htm
Texas Instruments 01/06/1998 6.72 Kb HTM slws058b.htm