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PMCPB5530X,115 NXP Semiconductors PMCPB5530X - 20 V, complementary Trench MOSFET ri Buy
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mosfet ratings

Catalog Datasheet Results Type PDF Document Tags
Abstract: GFB70N03 GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 ­ Transfer Characteristics Fig. 1 ­ Output Characteristics 70 4.5V 10V 6.0V 60 VDS = 10V 60 4.0V ID - Drain Current (A) ID - Drain Source Current (A , 0.01 125 150 80 100 GFB70N03 GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and , ) 1.2 1.4 GFB70N03 GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A ... Original
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5 pages,
99.04 Kb

mosfet ratings GFB70N03 GFB70N03 abstract
datasheet frame
Abstract: GFB50N03 GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 ­ Transfer Characteristics Fig. 1 ­ Output Characteristics 80 60 5.0V VGS=10V VDS = 10V 50 60 ID - Drain Current (A) ID - Drain Source Current (A , GFB50N03 GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless , Source-to-Drain Voltage (V) 1 1.2 GFB50N03 GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and ... Original
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5 pages,
105.6 Kb

GFB50N03 GFB50N03 abstract
datasheet frame
Abstract: Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 ­ , MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 7 ­ Gate , Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 ­ , Gate-to-Source Voltage (V) 10 GF2524 GF2524 MOSFET 2 Asymmetric N-Channel Enhancement-Mode MOSFET Ratings and , GF2524 GF2524 Asymmetric N-Channel Enhancement-Mode MOSFET MOSFET 1: VDS 30V RDS(ON) 37m ID 5.8A MOSFET ... Original
datasheet

6 pages,
101.07 Kb

GF2524 mosfet ratings GF2524 abstract
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Abstract: 50% 10% PULSE WIDTH GFB60N03 GFB60N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic , 150 80 100 GFB60N03 GFB60N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves , Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 ­ , GFB60N03 GFB60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 11m ID 60A NCHT t RE FE duc T , Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol ... Original
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5 pages,
105.23 Kb

GFB60N03 GFB60N03 abstract
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Abstract: MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 ­ Transfer , ) 0.6 -50 0.025 125 150 80 100 GFP60N03 GFP60N03 N-Channel Enhancement-Mode MOSFET Ratings , Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 ­ , GFP60N03 GFP60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 11m ID 60A t NCHT RE FE duc T , Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol ... Original
datasheet

5 pages,
112.2 Kb

GFP60N GFP60N03 GFP60N03 abstract
datasheet frame
Abstract: N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T 80 5.0V 4.5V A = 25°C unless , ) GFP50N03 GFP50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless , Source-to-Drain Voltage (V) GFP50N03 GFP50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T , GFP50N03 GFP50N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 , Options: 45A ­ 50 per tube, 9K per carton 45B ­ 50 per tube, 3K per carton A Maximum Ratings and ... Original
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5 pages,
110.2 Kb

mosfet ratings GFP50N03 GFP50N03 abstract
datasheet frame
Abstract: Enhancement-Mode MOSFET Ratings and Characteristic Curves (T 30 A = 25°C unless otherwise noted) Fig. 1 ­ , Temperature (°C) GF4936 GF4936 Dual N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A , ) GF4936 GF4936 Dual N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless , GF4936 GF4936 Dual N-Channel Enhancement-Mode MOSFET H C N TRENFET GE SO-8 0.197 (5.00) 0.189 (4.80 , Specially Designed for Low Voltage DC/DC Converters · Fast Switching for High Efficiency Maximum Ratings ... Original
datasheet

5 pages,
97.56 Kb

GF4936 GF4936 abstract
datasheet frame
Abstract: 50% S Input, VIN 10% PULSE WIDTH GF2208 GF2208 N-Channel Enhancement-Mode MOSFET Ratings and , Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 ­ , Voltage (V) VSD - Source-to-Drain Voltage (V) GF2208 GF2208 N-Channel Enhancement-Mode MOSFET Ratings , GF2208 GF2208 N-Channel Enhancement-Mode MOSFET H C N TRENFET GE SO-8 0.197 (5.00) 0.189 (4.80) 8 5 , for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage ... Original
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5 pages,
206.5 Kb

GF2208 GF2208 abstract
datasheet frame
Abstract: 150 TJ - Junction Temperature (癈) GF4435 GF4435 P-Channel Enhancement-Mode MOSFET Ratings and , ) GF4435 GF4435 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25癈 unless , GF4435 GF4435 P-Channel Enhancement-Mode MOSFET H C N TRENFET GE SO-8 0.197 (5.00) 0.189 (4.80) 8 5 , for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage , 2/15/01 GF4435 GF4435 P-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter ... Original
datasheet

5 pages,
153.21 Kb

GF4435 GF4435 abstract
datasheet frame
Abstract: N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted , - Source-to-Drain Voltage (V) GF4800 GF4800 N-Channel Enhancement-Mode MOSFET Ratings and , GF4800 GF4800 N-Channel Enhancement-Mode MOSFET H C N TRENFET GE SO-8 0.197 (5.00) 0.189 (4.80) 8 5 , Converters · Fast Switching for High Efficiency · Reduced Gate Charge Maximum Ratings and Thermal , sec. GF4800 GF4800 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter Static ... Original
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5 pages,
155.85 Kb

GF4800 GF4800 abstract
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Gen 5 MOSFET and FETKY TM component technologies in the shortest possible time. EL SEGUNDO Generation 5 HEXFETs and new FETKY TM . "The IRL3103D1S IRL3103D1S IRL3103D1S IRL3103D1S FETKY TM is the industry's first MOSFET and MOSFET which can be driven from a VGS gate drive of 4.5 to 10 V. The Schottky offers a 0.42-V forward voltage drop at 1 A. The IRL3103S IRL3103S IRL3103S IRL3103S is used as the upper control device offering the same MOSFET ratings (30-V, 0.014-ohm, n-channel, D2Pak) as the FETKY TM . Both part numbers are available in the
www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd0017a-v1.htm
International Rectifier 20/08/1999 8.47 Kb HTM wcd0017a-v1.htm
Gen 5 MOSFET and FETKY TM component technologies in the shortest possible time. EL SEGUNDO Generation 5 HEXFETs and new FETKY TM . "The IRL3103D1S IRL3103D1S IRL3103D1S IRL3103D1S FETKY TM is the industry's first MOSFET and MOSFET which can be driven from a VGS gate drive of 4.5 to 10 V. The Schottky offers a 0.42-V forward voltage drop at 1 A. The IRL3103S IRL3103S IRL3103S IRL3103S is used as the upper control device offering the same MOSFET ratings (30-V, 0.014-ohm, n-channel, D2Pak) as the FETKY TM . Both part numbers are available in the
www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd001cb.htm
International Rectifier 06/10/1998 8.54 Kb HTM wcd001cb.htm
Gen 5 HEXFET Power MOSFET Features & Benefits Benchmark low voltage HEXFET® Power MOSFET previous technologies. Higher avalanche energy ratings than other MOSFETs. Improved and Surface Mount packages. Wide range of current ratings (70A). International Rectifier advances the art of HEXFET® Power MOSFET wafer fabrication with the industries first Decreased manufacturing cycle time and increased throughput. Gen 5 HEXFET ® Power MOSFET
www.datasheetarchive.com/files/international-rectifier/docs/wcd0000d/wcd00de9.htm
International Rectifier 20/08/1999 7.16 Kb HTM wcd00de9.htm
5 HEXFET Power MOSFET Features & Benefits Benchmark low voltage HEXFET® Power MOSFET previous technologies. Higher avalanche energy ratings than other MOSFETs. Improved and Surface Mount packages. Wide range of current ratings (70A). International Rectifier advances the art of HEXFET® Power MOSFET wafer fabrication with the industries first Decreased manufacturing cycle time and increased throughput. Gen 5 HEXFET ® Power MOSFET
www.datasheetarchive.com/files/international-rectifier/docs/wcd0000d/wcd00d97.htm
International Rectifier 06/10/1998 7.28 Kb HTM wcd00d97.htm
ratings of HEXFET® Power MOSFET devices are sufficient for common applications. Using , Motor, and Solenoid Loads Avalanche Capability HEXFET® Power MOSFET two mechanisms which produce lateral current flow in the body region of a HEXFET® Power MOSFET HEXFET® Power MOSFET devices can be avalanched repetitively. Repetitive avalanche operation is characterized by two ratings: 1. E AR is the energy per pulse allowed under
www.datasheetarchive.com/files/international-rectifier/docs/wcd0000d/wcd00df4.htm
International Rectifier 20/08/1999 7.59 Kb HTM wcd00df4.htm
ratings of HEXFET® Power MOSFET devices are sufficient for common applications. Using , Motor, and Solenoid Loads Avalanche Capability HEXFET® Power MOSFET two mechanisms which produce lateral current flow in the body region of a HEXFET® Power MOSFET HEXFET® Power MOSFET devices can be avalanched repetitively. Repetitive avalanche operation is characterized by two ratings: 1. E AR is the energy per pulse allowed under
www.datasheetarchive.com/files/international-rectifier/docs/wcd0000d/wcd00da2.htm
International Rectifier 06/10/1998 7.72 Kb HTM wcd00da2.htm
) Absolute Maximum Ratings Symbol Max Unit Supply Voltage f OSC 380 kHz MOSFET Drive Capability D MOSFET 75 mA
www.datasheetarchive.com/files/microsemi/products/43846.htm
Microsemi 08/12/1999 5.1 Kb HTM 43846.htm
New short circuit protected IGBTs for high frequency operating. ( more ) RF SD29xx MOSFET Series Gold-metalized N-channel RF Power MOSFET with Enhanced Ruggedness at Ratings up to 300W. ( more )
www.datasheetarchive.com/files/stmicroelectronics/stonline/profiles/discretes/flash/art1-v1.htm
STMicroelectronics 25/01/2001 1.8 Kb HTM art1-v1.htm
Power MOSFET Drivers Power Supply Support Radiation Hardened ICs Special Analog Switches/MUXes/Crosspoints Switching Regulation Timing Circuits Video Voltage Reference ESD ratings for HIP4080A HIP4080A HIP4080A HIP4080A, HIP4081A HIP4081A HIP4081A HIP4081A and HIP4082 HIP4082 HIP4082 HIP4082. View Online Answer Id: 1240 Question What is the ESD ratings for: HIP4080A HIP4080A HIP4080A HIP4080A, HIP4081A HIP4081A HIP4081A HIP4081A and HIP4082 HIP4082 HIP4082 HIP4082? HBM=Human Body Model MM =Machine Model Answer The ESD ratings are as
www.datasheetarchive.com/files/intersil/device_pages/faq_1240-v1.html
Intersil 13/10/2005 7.93 Kb HTML faq_1240-v1.html
TRF7003 TRF7003 TRF7003 TRF7003 MOSFET POWER , field-effect transistor (MOSFET) manufactured using the Texas Instruments RFMOS RFMOS is a trademark of Texas 50-percent power-added efficiency (PAE). absolute maximum ratings over operating free-air temperature range under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only periods may affect device reliability. NOTE 1: With infinite heatsink and no air flow Title: MOSFET POWER
www.datasheetarchive.com/files/texas-instruments/sc/psheets/abstract/datasht/slws058b.htm
Texas Instruments 01/06/1998 6.72 Kb HTM slws058b.htm