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EL1516IYZ-T13 Intersil Corporation Dual Ultra Low Noise Amplifier; MSOP8, SOIC8; Temp Range: -40° to 85°C
EL1516ISZ-T7 Intersil Corporation Dual Ultra Low Noise Amplifier; MSOP8, SOIC8; Temp Range: -40° to 85°C
EL1516AIYZ-T7 Intersil Corporation Dual Ultra Low Noise Amplifier; MSOP10; Temp Range: -40° to 85°C
CD4536BF3A Texas Instruments CMOS Programmable Timer 16-CDIP -55 to 125
SN5497J Texas Instruments Synchronous 6-Bit Binary Rate Multipliers 16-CDIP -55 to 125
SNJ5497J Texas Instruments Synchronous 6-Bit Binary Rate Multipliers 16-CDIP -55 to 125

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mosfet ratings

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 ­ Transfer Characteristics Fig. 1 ­ Output Characteristics 80 60 5.0V VGS=10V VDS = 10V 50 60 ID - Drain Current (A) ID - Drain Source Current (A , GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless , Source-to-Drain Voltage (V) 1 1.2 GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and -
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Abstract: GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 ­ Transfer Characteristics Fig. 1 ­ Output Characteristics 70 4.5V 10V 6.0V 60 VDS = 10V 60 4.0V ID - Drain Current (A) ID - Drain Source Current (A , 0.01 125 150 80 100 GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and , ) 1.2 1.4 GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A -
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Abstract: , VIN 50% 10% PULSE WIDTH GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and , 150 80 100 GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves , Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 11 ­ , GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 13m ID 50A NCHT t RE FE duc T , Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol General Semiconductor
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MIL-STD-750
Abstract: Input, VIN 50% 10% PULSE WIDTH GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and , MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 ­ , Voltage (V) 1.2 1.4 GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic , GFB70N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 8m ID 70A NCHT TRENFE GE D , Designed for Low Voltage DC/DC Converters · Fast Switching for High Efficiency Maximum Ratings and General Semiconductor
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Abstract: GFP50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless , N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise , Source-to-Drain Voltage (V) 1 1.2 GFP50N03 N-Channel Enhancement-Mode MOSFET Ratings and , GFP50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 13m ID 50A NCHT RE FE T EN G , terminals Mounting Torque: 10 in-lbs maximum Weight: 2.0g Maximum Ratings and Thermal Characteristics General Semiconductor
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Abstract: % 50% S Input, VIN 10% PULSE WIDTH GFB60N03 N-Channel Enhancement-Mode MOSFET Ratings , Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 ­ , N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted , GFB60N03 N-Channel Enhancement-Mode MOSFET H C N t E ET c u R d T NF ro P GE New TM VDS 30V , Converters · Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter General Semiconductor
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Abstract: GF4450 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T 50 6.0V A = 25 , Temperature (°C) GF4450 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = , GF4450 N-Channel Enhancement-Mode MOSFET H C N TRENFET GE SO-8 0.197 (5.00) 0.189 (4.80) 8 5 , Converters · Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter , FR4 Board, t 10s 2/15/01 GF4450 N-Channel Enhancement-Mode MOSFET Electrical General Semiconductor
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Abstract: Input, VIN 50% 10% PULSE WIDTH GFP70N03 N-Channel Enhancement-Mode MOSFET Ratings and , MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 ­ , Source-to-Drain Voltage (V) 1.2 1.4 GFP70N03 N-Channel Enhancement-Mode MOSFET Ratings and , GFP70N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 8m ID 70A NCHT RE FE T EN G D , " (4.3mm) from case Mounting Torque: 10 in-lbs maximum Weight: 2.0g Maximum Ratings and Thermal General Semiconductor
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gfp70
Abstract: GFD50N03A N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless , 0.0125 125 150 60 70 80 GFD50N03A N-Channel Enhancement-Mode MOSFET Ratings and , GFD50N03A N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless , GFD50N03A N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 7m ID 78A NCHT TRENFE E D , Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol General Semiconductor
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s 0214
Abstract: WIDTH GF4126 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25 , Drain-to-Source Voltage (V) 125 150 16 20 GF4126 N-Channel Enhancement-Mode MOSFET Ratings and , Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 11 ­ , GF4126 N-Channel Enhancement-Mode MOSFET NCHT TRENFE GE Low VGS(th) VDS 20V RDS(ON) 30m ID , for DC/DC converters Maximum Ratings and Thermal Characteristics (T Parameter A = 25 General Semiconductor
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Abstract: Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 ­ , 30 35 40 GF4800 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T , Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 11 ­ , GF4800 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 18.5m ID 9A NCHT TRENFE GE , · Fast Switching for High Efficiency · Reduced Gate Charge Maximum Ratings and Thermal General Semiconductor
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Abstract: % 10% PULSE WIDTH GF4936 Dual N-Channel Enhancement-Mode MOSFET Ratings and Characteristic , Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 ­ , Source-to-Drain Voltage (V) 1.2 1.4 GF4936 Dual N-Channel Enhancement-Mode MOSFET Ratings and , GF4936 Dual N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 37m ID 5.8A NCHT TRENFE GE , Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage A = 25 General Semiconductor
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Abstract: Input, VIN 50% 10% PULSE WIDTH BSN20 N-Channel Enhancement-Mode MOSFET Ratings and , N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves Fig. 7 ­ Source-Drain Diode Forward , N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves Fig. 10 ­ On-Resistance vs. Junction , BSN20 N-Channel Enhancement-Mode MOSFET TO-236AB (SOT-23) ® .016 (0.4) .056 (1.43) .052 , Maximum Ratings and Thermal Characteristics Parameter Symbol Pulsed Drain Current (2) Power General Semiconductor
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BSN20 MARKING SOT-23 016
Abstract: , VIN 10% PULSE WIDTH GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic , N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted , GFB75N03 N-Channel Enhancement-Mode MOSFET H C N t E ET c u R d T NF ro P GE New TM VDS 30V , High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage , package (2) 1-in2 2oz. Cu PCB mounted GFB75N03 N-Channel Enhancement-Mode MOSFET Electrical General Semiconductor
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Abstract: Input, VIN 10% PULSE WIDTH GFP60N03 N-Channel Enhancement-Mode MOSFET Ratings and , MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 ­ , N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted , GFP60N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 , in-lbs maximum Weight: 2.0g Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source General Semiconductor
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Abstract: Input, VIN 50% 10% PULSE WIDTH GF4953 Dual P-Channel Enhancement-Mode MOSFET Ratings and , GF4953 Dual P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25 , GF4953 Dual P-Channel Enhancement-Mode MOSFET VDS ­30V RDS(ON) 53m ID ­4.9A NCHT TRENFE GE , · Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter , °C RJA 62.5 °C/W V A 7/10/01 GF4953 Dual P-Channel Enhancement-Mode MOSFET General Semiconductor
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MIL-STD750
Abstract: N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T 10 A = 25°C unless otherwise , GF2304 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless , N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise , GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117 ID 2.5A NCHT TRENFE GE TO , profile Maximum Ratings and Thermal Characteristics Parameter Symbol Continuous Drain Current General Semiconductor
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Cu53
Abstract: % 50% S Input, VIN 10% PULSE WIDTH GF4126 N-Channel Enhancement-Mode MOSFET Ratings and , Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 ­ , Source-to-Drain Voltage (V) GF4126 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A , GF4126 N-Channel Enhancement-Mode MOSFET H C N TRENFET GE SO-8 0.197 (5.00) 0.189 (4.80) 8 5 , DC/DC converters Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage General Semiconductor
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Abstract: N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves Fig. 1 ­ Output Characteristics 1.5 , Qg - Gate Charge (nC) BSN20 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic , Junction Temperature (°C) BSN20 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves , BSN20 N-Channel Enhancement-Mode MOSFET TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 , minority carrier storage time · CMOS logic compatible input · No secondary breakdown Maximum Ratings and General Semiconductor
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Abstract: % 50% S Input, VIN 10% PULSE WIDTH GFD30N03 N-Channel Enhancement-Mode MOSFET Ratings , ) GFD30N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless , ) VSD - Source-to-Drain Voltage (V) GFD30N03 N-Channel Enhancement-Mode MOSFET Ratings and , GFD30N03 N-Channel Enhancement-Mode MOSFET H C N TRENFET E TO-252 (DPAK) TM VDS 30V RDS(ON , Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source General Semiconductor
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