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TK10A60D(STA4,Q,M) Toshiba America Electronic Components MOSFET N-CH 600V 10A TO-220F visit Digikey Buy
AOTF10T60PL Alpha & Omega Semiconductor MOSFET N-CH 600V 10A TO-220 visit Digikey Buy
AOWF10T60P Alpha & Omega Semiconductor MOSFET N-CH 600V 10A TO-262 visit Digikey Buy
AOT10T60P Alpha & Omega Semiconductor MOSFET N-CH 600V 10A TO220 visit Digikey Buy
AOB10T60PL Alpha & Omega Semiconductor MOSFET N-CH 600V 10A TO263 visit Digikey Buy
AOT10T60PL Alpha & Omega Semiconductor MOSFET N-CH 600V 10A TO-220 visit Digikey Buy

mosfet 10a 600v

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTCâ'™s advanced , -743.d 10N60K  Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise , width limited by maximum junction temperature 3. L = 6mH, IAS = 10A, VDD = 50V, RG = 25â"¦ Starting TJ , -743.d 10N60K  Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise Unisonic Technologies
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10N60KL-TF3-T 10N60KG-TF3-T 10N60KL-TF1-T 10N60KG-TF1-T 10N60KL-TF3T-T 10N60KG-TF3T-T

10N60K

Abstract: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC's advanced technology to provide , Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER , 10A, VDD = 50V, RG = 25 Starting TJ = 25°C 4. ISD 9.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25 , Drain-Source Breakdown Voltage Drain-Source Leakage Current VGS = 0V, ID = 250A VDS = 600V, VGS = 0V Forward
Unisonic Technologies
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QW-R502-743
Abstract: UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed , resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high , Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified) PARAMETER SYMBOL , temperature 3. L = 8.9mH, IAS = 10A, VDD = 50V, RG = 25 â"¦ Starting TJ = 25°C 4. ISD ≤ 9.5A, di/dt â Unisonic Technologies
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10N60ZL-TF1-T 10N60ZG-TF1-T QW-R502-B05
Abstract: UNISONIC TECHNOLOGIES CO., LTD 10N60Z Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60Z is a high voltage and high current power MOSFET, designed to have better , avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power ,  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified) PARAMETER , : Pulse width limited by maximum junction temperature 3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 â Unisonic Technologies
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QW-R502-936
Abstract: UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET , resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed , Tube Tube 1 of 6 QW-R205-022.g 10N60K-MT  Preliminary Power MOSFET MARKING , ® Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER Unisonic Technologies
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10N60KL-TA3-T 10N60KG-TA3-T 10N60KL-TF2-T 10N60KG-TF2-T

tf 10n60

Abstract: MOSFET 10n60 UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better , avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power , -119.N 10N60  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified , junction temperature 3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 â"¦ Starting TJ = 25°C 4. ISD ≤ 9.5A
Unisonic Technologies
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tf 10n60 MOSFET 10n60 equivalent+of+10N60+mosfet 10N60L-TA3-T 10N60G-TA3-T 10N60L-TF1-T 10N60G-TF1-T 10N60L-TF2-T 10N60G-TF2-T

10N60G TO-220F

Abstract: UTC10N60L,10N60L, UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better , avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power , QW-R502-119.O 10N60  Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen , -119.O 10N60  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified
Unisonic Technologies
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10N60G TO-220F UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l 10N60L-TF3-T 10N60G-TF3-T 10N60L-TF3T-T 10N60G-TF3T-T 10N60L- 10N60G-
Abstract: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better , -220F FEATURES * VDS =600V * ID = 10A * RDS(ON) =0.73â"¦@VGS =10V * Low gate charge ( typical 44 nC) * Low , avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power , D S Packing Tube Tube Tube Tape Reel Tube 1 of 7 QW-R502-119.F 10N60 Power MOSFET Unisonic Technologies
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10N60L-TQ2-R 10N60G-TQ2-R 10N60L-TQ2-T 10N60G-TQ2-T
Abstract: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTCâ'™s advanced , MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS , maximum junction temperature 3. L = 6mH, I AS = 10A, V DD = 50V, R G = 25â"¦ Starting T J = 25°C 4. I , Power MOSFET ELECTRICAL CHARACTERISTICS( T C =25°C, unless otherwise specified) PARAMETER OFF Unisonic Technologies
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mosfet 10a 600v

Abstract: MOSFET 10n60 UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better , avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power , Tube 1 of 7 QW-R502-119.H 10N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless , width limited by maximum junction temperature 3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Starting TJ
Unisonic Technologies
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mosfet 10a 600v tr 10n60 UTC10N60 10N60G 10N60L
Abstract: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTCâ'™s advanced technology to provide , 1 of 7 QW-R502-743.E 10N60K  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless , temperature 3. L=6mH, IAS=10A, VDD=50V, RG=25 â"¦, Starting TJ = 25°C 4. ISD≤9.5A, di/dt≤200A/μs, VDDâ ,  Power MOSFET ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified Unisonic Technologies
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Abstract: TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source , =25â"ƒ 1/9 Version: C13 TSM10N60 600V N-Channel MOSFET Specifications (Ta = 25oC unless otherwise , independent of operating temperature. 2/9 V Version: C13 TSM10N60 600V N-Channel MOSFET Gate , Waveform 3/9 Version: C13 TSM10N60 600V N-Channel MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/9 Version: C13 TSM10N60 600V N-Channel MOSFET Electrical Characteristics Taiwan Semiconductor
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TSM10N60CZ TSM10N60CI

Mosfet

Abstract: SSF10N60F SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS(on) 0.8ohm , Junction and Storage Temperature Range Page 1 of 7 A Rev.1.0 SSF10N60F 600V N-Channel MOSFET , Page 3 of 7 Rev.1.0 SSF10N60F 600V N-Channel MOSFET Typical Electrical and Thermal , Temperature www.goodark.com Temperature Page 4 of 7 Rev.1.0 SSF10N60F 600V N-Channel MOSFET , Impedance, Junction-to-Case www.goodark.com Page 5 of 7 Rev.1.0 SSF10N60F 600V N-Channel MOSFET
Good-Ark
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Mosfet
Abstract: 4 MagnaChip Semiconductor Ltd. MDZ1N60 N-channel MOSFET 600V 300 â'» Note : ID = 1.0A , N-Channel MOSFET 600V, 0.4 A, 8.5â"¦ General Description Features The MDZ1N60 uses advanced , N-channel MOSFET 600V MDZ1N60 Part Number Temp. Range Package Packing RoHS Status , . Version 1.1 2 MagnaChip Semiconductor Ltd. MDZ1N60 N-channel MOSFET 600V Ordering Information , MagnaChip Semiconductor Ltd. MDZ1N60 N-channel MOSFET 600V 2 VGS, Gate-Source Voltage [V] 120V MagnaChip Semiconductor
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MDZ1N60UMH

SSRF10N60SL

Abstract: MosFET SSRF10N60SL 10A , 600V , RDS(ON) 1 N-Ch Enhancement Mode Power MOSFET Elektronische , SSRF10N60SL 10A , 600V , RDS(ON) 1 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente , SSRF10N60SL Elektronische Bauelemente 10A , 600V , RDS(ON) 1 N-Ch Enhancement Mode Power MOSFET , SSRF10N60SL Elektronische Bauelemente 10A , 600V , RDS(ON) 1 N-Ch Enhancement Mode Power MOSFET , be informed individually. Page 3 of 5 SSRF10N60SL Elektronische Bauelemente 10A , 600V
SeCoS
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MOSFET 300V

Abstract: mosfet 300v 10a TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source , Version: A12 TSM10N60 600V N-Channel MOSFET Specifications (Ta = 25oC unless otherwise noted , temperature. - 0.8 1.5 V 2/6 Version: A12 TSM10N60 600V N-Channel MOSFET TO-220 Mechanical Drawing Unit: Millimeters 3/6 Version: A12 TSM10N60 600V N-Channel MOSFET ITO-220 Mechanical Drawing Unit: Millimeters 4/6 Version: A12 TSM10N60 600V N-Channel MOSFET TO
Taiwan Semiconductor
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MOSFET 300V mosfet 300v 10a N-channel MOSFET to-220 MOSFET TO-220 TSM10N60CM

IR igbt gate driver ic

Abstract: IGBT PNP IR IGBT 1 MOSFET IGBT IR 2 IGBT GATE POLYSILICON , N- EPI N+ BUFFER LAYER P+ SUBSTRATE dv/dt COLLECTOR MOSFET (a) DEVICE STRUCTURE COLLECTOR C Qrr Trr G rb IGBT E EMITTER MOSFET (b) Device Symbol (c) EQUIVALENT CIRCUIT IGBT MOSFET 3 IGBT N PNP IRIGBT MOSFET MOSFET MOSFET IGBT 1 1 IGBT 2 P+ IGBT MOSFET N
International Rectifier
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IR igbt gate driver ic IGBT PNP 5A IGBT driver IC igbt 100V 5A mosfet ir 250 n irf 944 AN-983AJ AN-990AJ IRGBC20U IRG4BC40SIRG4BC40W IRF840LC 500V600V

Mosfet

Abstract: SSF2N60D1 SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS(on) 3.9Î , Junction and Storage Temperature Range Page 1 of 7 A Rev.1.0 SSF2N60D1 600V N-Channel MOSFET , .1.0 SSF2N60D1 600V N-Channel MOSFET Test Circuits and Waveforms Switch Waveforms: Notes: â' The , Rev.1.0 SSF2N60D1 600V N-Channel MOSFET Typical Electrical and Thermal Characteristics , Vs. Case Temperature Page 4 of 7 Rev.1.0 SSF2N60D1 600V N-Channel MOSFET Typical
Good-Ark
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Mosfet

Abstract: SSF12N60F SSF12N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS(on) 0.55Î , Range Page 1 of 7 A Rev.1.1 SSF12N60F 600V N-Channel MOSFET Thermal Resistance Symbol , VDS = 600V,VGS = 0V TJ = 125â"ƒ nA VGS =30V VGS = -30V ID = 10A, nC nS pF VDS , www.goodark.com Page 2 of 7 Rev.1.1 SSF12N60F 600V N-Channel MOSFET Test Circuits and Waveforms , www.goodark.com Page 3 of 7 Rev.1.1 SSF12N60F 600V N-Channel MOSFET Typical Electrical and Thermal
Good-Ark
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Mosfet

Abstract: SSF10N60 SSF10N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS(on) 0.69Π, Junction and Storage Temperature Range Page 1 of 7 A Rev.1.0 SSF10N60 600V N-Channel MOSFET , temperature of TJ(MAX)=150°C. www.goodark.com Page 3 of 7 Rev.1.0 SSF10N60 600V N-Channel MOSFET , .1.0 SSF10N60 600V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 5. Maximum , Rev.1.0 SSF10N60 600V N-Channel MOSFET Mechanical Data TO-220 PACKAGE OUTLINE DIMENSION_GN E
Good-Ark
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54BSC
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