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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: CONDUCTIVITY-MODULATED FETS vs FORWARD BLOCKING VOLTAGE. The MOSFET on-state resistance is contributed to primarily , Semiconductor Corporation May 1992 AN-7503 manufacturing point of view, since MOSFETs, with their very , , high-voltage MOSFETs. A change in the horizontal geometry of the MOSFET can lower the specific on-state , , the extended drain region of the MOSFET generally contributes the most to the on-state resistance in , resistance per unit area, is about 10 times less than in a standard MOSFET at the 400V BVDSS level, as shown ... | Original |
6 pages, |
Ignition Transformer AN75 AN-7503 mosfet to ignition coil AN-7503 abstract |
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| Abstract: MOSFET on-state resistance is contributed to primarily by three components of the transistor: the MOS , has its limitations from a ©2001 Fairchild Semiconductor Corporation May 1992 AN-7503 , low-on-state-resistance, high-voltage MOSFETs. A change in the horizontal geometry of the MOSFET can lower the specific , earlier, the extended drain region of the MOSFET generally contributes the most to the on-state , , in specific on-state resistance per unit area, is about 10 times less than in a standard MOSFET at ... | Original |
6 pages, |
Ignition Transformer ge motors ac 110v dc motor speed control using scr driver AN-7503 12v DC motor speed control using scr mosfet to ignition coil AN-7503 abstract |
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| Abstract: gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203 BF1203 PINNING - SOT363 , is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. , PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless otherwise specified VDS , specification Dual N-channel dual gate MOS-FET BF1203 BF1203 LIMITING VALUES In accordance with the Absolute ... | Original |
20 pages, |
mosfet k 9047 BF1203 MBL254 marking code L2 MBD128 MBD128 abstract |
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| Abstract: gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203 BF1203 PINNING - SOT363 , ) 4 DESCRIPTION The BF1203 BF1203 is a combination of two different dual gate MOS-FET amplifiers with , REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless , Apr 25 2 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET ... | Original |
20 pages, |
FET MARKING CODE BF1203 MBD128 MBD128 abstract |
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| Abstract: gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203 BF1203 PINNING - SOT363 , ) 4 DESCRIPTION The BF1203 BF1203 is a combination of two different dual gate MOS-FET amplifiers with , REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless , Dec 04 2 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET ... | Original |
20 pages, |
BF1203 MBD128 MBD128 abstract |
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| Abstract: BVDSS = 650 V RDS(on) typ = 4.5 HFU2N65 HFU2N65 ID = 1.6 A 650V N-Channel MOSFET I-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.5 (Typ.) @VGS=10V , 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0,Nov 2008 ... | Original |
7 pages, |
RG 702 Diode HFU2N65 HFU2N65 abstract |
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| Abstract: BVDSS = 400 V RDS(on) typ = 1.27 HFD5N40 HFD5N40 / HFU5N40 HFU5N40 ID = 3.4 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD5N40 HFD5N40 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU5N40 HFU5N40 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC , 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0,July 2005 ... | Original |
8 pages, |
diode in 400 HFD5N40 HFU5N40 HFD5N40 abstract |
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| Abstract: BVDSS = 500 V RDS(on) HFD4N50 HFD4N50 / HFU4N50 HFU4N50 typ = 2.0 ID = 2.6 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD4N50 HFD4N50 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU4N50 HFU4N50 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC , 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0,July 2005 ... | Original |
8 pages, |
BVDSS HFD4N50 HFU4N50 HFD4N50 abstract |
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| Abstract: BVDSS = 650 V RDS(on) typ = 10.5 HFD1N65 HFD1N65 / HFU1N65 HFU1N65 ID = 0.8 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N65 HFD1N65 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ. , 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0,Apr 2006 ... | Original |
8 pages, |
HFD1N65 HFU1N65 HFD1N65 abstract |
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| Abstract: BVDSS = 600 V RDS(on) typ = 4.0 HFD2N60 HFD2N60 / HFU2N60 HFU2N60 ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N60 HFD2N60 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N60 HFU2N60 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC , 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0 ... | Original |
8 pages, |
HFD2N60 HFU2N60 HFD2N60 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| ST | N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET Datasheet N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET STP5NC70Z STP5NC70Z STP5NC70Z STP5NC70Z STP5NC70ZFP STP5NC70ZFP STP5NC70ZFP STP5NC70ZFP STB5NC70Z-1 STB5NC70Z-1 STB5NC70Z-1 STB5NC70Z-1 Document Format Size Document Number Date Update Pages Portable Document Format 7503 19/12/2000 11 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/7503.htm |
STMicroelectronics | 20/12/2000 | 2.84 Kb | HTM | 7503.htm |
| International Rectifier P O W E R C O N V E R S I O N E X P E R T S Product Line HEXFET Power MOSFETs Integrated Circuits IGBTs Diodes SCR Relays Pow IR train Govt & Space Intelligent Power Switch HEXFET Power MOSFET (multi-chip) ( 7) results parameter: Polarity Gate Speed |BVDSS .030 N/A 4.5 5.4 N/A 100 1.3 IRF7503 MICRO 8 DUAL N DUAL LOGIC 30 .135 www.datasheetarchive.com/files/international-rectifier/product-info/shortform/dslink/fetm-211.html |
International Rectifier | 24/07/2000 | 10.65 Kb | HTML | fetm-211.html |
| International Rectifier - Spice Models Download Spice Models This table will help you find information about Spice Models for HEXFET ® power MOSFETs Gov't and Space HEXFET ® power MOSFETs IRF HEXFET ® Power MOSFETS IRF1010N IRF1010N IRF1010N IRF1010N IRF1010NS IRF1010NS IRF1010NS IRF1010NS IRF1104 IRF1104 IRF1104 IRF1104 IRF1310 IRF1310 IRF1310 IRF1310 IRF2807 IRF2807 IRF2807 IRF2807 IRF3205 IRF3205 IRF3205 IRF3205 IRF7416 IRF7416 IRF7416 IRF7416 IRF7503 IRF7506 IRF7506 IRF7506 IRF7506 IRF7507N IRF7507N IRF7507N IRF7507N IRF7507P IRF7507P IRF7507P IRF7507P IRF7603 IRF7603 IRF7603 IRF7603 IRF7604 IRF7604 IRF7604 IRF7604 IRF7606 IRF7606 IRF7606 IRF7606 IRF7801 IRF7801 IRF7801 IRF7801 www.datasheetarchive.com/files/international-rectifier/docs/wcd00002/wcd00218.htm |
International Rectifier | 06/10/1998 | 15.32 Kb | HTM | wcd00218.htm |
| International Rectifier P O W E R C O N V E R S I O N E X P E R T S Product Line HEXFET Power MOSFETs Integrated Circuits IGBTs Diodes SCR Relays Pow IR train Govt & Space Intelligent Power Switch HEXFET Power MOSFET (discrete) ( 16) results parameter: Polarity Gate Speed VBRdss V DRIVE 20 0.030 4.5 6.5 70 1.8 IRF7503(N) MICRO 8 DUAL N DUAL LOGIC www.datasheetarchive.com/files/international-rectifier/product-info/shortform/dslink/fetd-211.html |
International Rectifier | 24/07/2000 | 13.24 Kb | HTML | fetd-211.html |
| International Rectifier - Saber Models Download Saber Models This table will help you find information about Saber Models for HEXFET ® power MOSFETs Gov't and Space HEXFET ® power MOSFETs IRHM9150 IRHM9150 IRHM9150 IRHM9150 IRHY9130 IRHY9130 IRHY9130 IRHY9130 JANTX2N6782 JANTX2N6782 JANTX2N6782 JANTX2N6782 JANTX2N6845 JANTX2N6845 JANTX2N6845 JANTX2N6845 HEXFET ® Power MOSFETS IRF7416 IRF7416 IRF7416 IRF7416 IRF7503 IRF7506 IRF7506 IRF7506 IRF7506 IRF7507N IRF7507N IRF7507N IRF7507N IRF7507P IRF7507P IRF7507P IRF7507P IRF7603 IRF7603 IRF7603 IRF7603 IRF7604 IRF7604 IRF7604 IRF7604 IRF7606 IRF7606 IRF7606 IRF7606 IRF7801 IRF7801 IRF7801 IRF7801 www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd00142.htm |
International Rectifier | 06/10/1998 | 16.48 Kb | HTM | wcd00142.htm |
| International Rectifier - Spice Models Download Spice Models This table will help you find information about Spice Models for HEXFET ® Power MOSFETs Gov't and Space HEXFET ® power MOSFETs IRF130 IRF130 IRF130 IRF130 IRF IRHY9130 IRHY9130 IRHY9130 IRHY9130 JANTX2N6782 JANTX2N6782 JANTX2N6782 JANTX2N6782 JANTX2N6845 JANTX2N6845 JANTX2N6845 JANTX2N6845 HEXFET ® power MOSFETS IRF IRF7413 IRF7413 IRF7413 IRF7413 IRF7416 IRF7416 IRF7416 IRF7416 IRF7503 IRF7506 IRF7506 IRF7506 IRF7506 IRF7507N IRF7507N IRF7507N IRF7507N IRF7507P IRF7507P IRF7507P IRF7507P IRF7603 IRF7603 IRF7603 IRF7603 IRF7604 IRF7604 IRF7604 IRF7604 IRF7606 IRF7606 IRF7606 IRF7606 www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd00140.htm |
International Rectifier | 06/10/1998 | 16.4 Kb | HTM | wcd00140.htm |
| HEXFET Power MOSFETs Series Part Number BV DSS (V) I D @ 25 o C (A) R DS .06 91262 dual N-channel IRF7501 IRF7501 IRF7501 IRF7501 20 1.7 0.135 0.2 91265 IRF7503 30 www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd001d1.htm |
International Rectifier | 06/10/1998 | 7.67 Kb | HTM | wcd001d1.htm |
| ST | N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET Datasheet N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET Portable Document Format 7503 19/12/2000 11 Raw Text Format /TO-220FP/I /TO-220FP/I /TO-220FP/I /TO-220FP/I PAK Zener-Protected PowerMESH]III MOSFET n TYPICAL R DS (on) = 1.8 W n OVERLAY ] Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7503.htm |
STMicroelectronics | 20/12/2000 | 11.44 Kb | HTM | 7503.htm |
| ! SIEMENS Small Signal Semiconductors ! BF1005 BF1005 BF1005 BF1005 ! Si Dual Gate MOSFET Tetrode in SOT143 ! VDS = 5 V VG2S = 0.5 V ID = 0.05 mA ! Common Source S-Parameters: April 1995 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9970 -0.7 0.001 -43.5 0 .1 0.9151 -59.1 1.800 0.7695 -111.6 0.006 -139.3 0.0057 -147.0 0.9050 -63.1 1.900 0.7503 www.datasheetarchive.com/download/49852586-145316ZC/bf1005.zip (IE5V0V50.S2P) |
Infineon | 08/09/2000 | 10.58 Kb | ZIP | bf1005.zip |
| ! SIEMENS Small Signal Semiconductors ! BF1005 BF1005 BF1005 BF1005 ! Si Dual Gate MOSFET Tetrode in SOT143 ! VDS = 5 V VG2S = 0.5 V ID = 0.05 mA ! Common Source S-Parameters: April 1995 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9970 -0.7 0.001 -43.5 0 .1 0.9151 -59.1 1.800 0.7695 -111.6 0.006 -139.3 0.0057 -147.0 0.9050 -63.1 1.900 0.7503 www.datasheetarchive.com/files/infineon/ehdata/spar/bf1005/ie5v0v50.s2p |
Infineon | 01/12/1996 | 2.39 Kb | S2P | ie5v0v50.s2p |