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V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
ISL6625ACRZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; DFN8; Temp Range: See Datasheet visit Intersil Buy
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy

mosfet 7503

Catalog Datasheet MFG & Type PDF Document Tags

mosfet 7503

Abstract: mosfet to ignition coil CONDUCTIVITY-MODULATED FETS vs FORWARD BLOCKING VOLTAGE. The MOSFET on-state resistance is contributed to primarily , Semiconductor Corporation May 1992 AN-7503 manufacturing point of view, since MOSFETs, with their very , , high-voltage MOSFETs. A change in the horizontal geometry of the MOSFET can lower the specific on-state , , the extended drain region of the MOSFET generally contributes the most to the on-state resistance in , resistance per unit area, is about 10 times less than in a standard MOSFET at the 400V BVDSS level, as shown
Fairchild Semiconductor
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mosfet to ignition coil

Abstract: 12v DC motor speed control using scr MOSFET on-state resistance is contributed to primarily by three components of the transistor: the MOS , has its limitations from a ©2001 Fairchild Semiconductor Corporation May 1992 AN-7503 , low-on-state-resistance, high-voltage MOSFETs. A change in the horizontal geometry of the MOSFET can lower the specific , earlier, the extended drain region of the MOSFET generally contributes the most to the on-state , specific on-state resistance per unit area, is about 10 times less than in a standard MOSFET at the 400V
Fairchild Semiconductor
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pt 4115 led driver

Abstract: an7527 Designs (175 K) Jul 19, 2002 AN-7510: AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring , The L2FET: A 5 Volt GateDrive Power MOSFET (171 K) Jul 19, 2002 AN-42046: Application Note 42046 , Supply for LCD Monitor Use (232 K) Jul 19, 2002 AN-7503: AN-7503 The Application Of , AC-Motor Speed Control (493 K) Jul 19, 2002 AN-9010: AN-9010 MOSFET Basics (352 K) Jul 19, 2002 FAN5235-PB , -7506: AN-7506 Spicing-Up Spice II Software For Power MOSFET Modeling (242 K) Jul 19, 2002 AN-9012: AN
Fairchild Semiconductor
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pt 4115 led driver an7527 AN-7527 AN-7501 an5043 AN-7502 BUT12/12A BUT12 BUT12A 54TYP AN-822 AN-881

d 42030 transistor

Abstract: AN-7505 Waveforms Of The L2FET: A 5 Volt GateDrive Power MOSFET (171 K) Jul 19, 2002 AN-7510: AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options (216 K) Jul 19, 2002 AN-7511: AN , Spice II Software For Power MOSFET Modeling (242 K) Jul 19, 2002 AN-9018-3: AN-9018-3 (Part 3 of 3 , -7507 SP600 and SP601 an HVIC MOSFET/IGT Driver for Half-Bridge Topologies (421 K) Jul 19, 2002 AN-4102: AN , -9010 MOSFET Basics (352 K) Jul 19, 2002 ABR-42022: ABR-42022 ML4833 220V Non-Dimming Ballast Design (68 K) Jul
Fairchild Semiconductor
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FAN6800 d 42030 transistor AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 BUT11/11A BUT11 BUT11A AN-9019 AN-140 AN-4101

226mJ

Abstract: hfu1n65s BVDSS = 650 V RDS(on) typ = 10.5 HFD1N65S / HFU1N65S ID = 0.9 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N65S Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ , 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05
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226mJ

RG 702 Diode

Abstract: hfu2n60s BVDSS = 600 V RDS(on) typ = 4.2 HFD2N60S / HFU2N60S ID = 1.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N60S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N60S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC , -251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2
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RG 702 Diode 702 D-PAK HFU2N60

hfu4n50

Abstract: BVDSS BVDSS = 500 V RDS(on) HFD4N50 / HFU4N50 typ = 2.0 ID = 2.6 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD4N50 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU4N50 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ , 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1
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BVDSS

HFD2N60

Abstract: BVDSS = 600 V RDS(on) typ = 4.0 HFD2N60 / HFU2N60 ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N60 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N60 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC , 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0
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HFD1N60S

Abstract: hfu1n60s BVDSS = 600 V RDS(on) typ = 10 HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N60S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU1N60S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC , 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ
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453 oc

hfu1n80

Abstract: BVDSS = 800 V RDS(on) typ = 13 HFD1N80 / HFU1N80 ID = 1.0 A 800V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design HFD1N80 Superior Avalanche Rugged Technology Robust Gate Oxide Technology D Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area G Lower RDS(ON) : 13 (Typ.) @VGS=10V 100% Avalanche Tested Symbol , 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW
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HFU1N60

Abstract: BVDSS = 600 V RDS(on) typ = 9.5 HFD1N60 / HFU1N60 ID = 0.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N60 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU1N60 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC , 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW
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hfu1n65

Abstract: BVDSS = 650 V RDS(on) typ = 10.5 HFD1N65 / HFU1N65 ID = 0.8 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N65 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ , 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0,Apr 2006
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hfu5n50s

Abstract: hfd5n50 BVDSS = 500 V RDS(on) typ = 1.2 HFD5N50S / HFU5N50S ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD5N50S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU5N50S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC , -251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2
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hfd5n50 HFD5N50S/HFU5N50S

RG 702 Diode

Abstract: DIODE 60 A BVDSS = 650 V RDS(on) typ = 4.5 HFU2N65 ID = 1.6 A 650V N-Channel MOSFET I-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.5 (Typ.) @VGS=10V , TO-251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3
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DIODE 60 A

hfu5n65s

Abstract: BVDSS = 650 V RDS(on) typ = 2.3 HFD5N65S / HFU5N65S ID = 4.0 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD5N65S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU5N65S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC , 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ
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hfu6n40s

Abstract: BVDSS = 400 V RDS(on) typ = 0.83 HFD6N40S / HFU6N40S ID = 4.5 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD6N40S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU6N40S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ , 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW
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hfu2n70s

Abstract: HFU2 BVDSS = 700 V RDS(on) typ = 5.0 HFD2N70S / HFU2N70S ID = 1.5 A 700V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N70S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N70S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC , -251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2
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HFU2 mosfet DPAK

hfu1n70

Abstract: mosfet hfu1n70 BVDSS = 700 V RDS(on) typ = 14.0 HFD1N70 / HFU1N70 ID = 0.8 A 700V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N70 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ , -251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2
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mosfet hfu1n70

mosfet VDS 650V ID 6A TO 252

Abstract: RG 702 Diode BVDSS = 650 V RDS(on) typ = 5.0 HFD2N65S / HFU2N65S ID = 1.6 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N65S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N65S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC , -251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2
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mosfet VDS 650V ID 6A TO 252 66 6602

diode in 400

Abstract: hfu5n40 BVDSS = 400 V RDS(on) typ = 1.27 HFD5N40 / HFU5N40 ID = 3.4 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD5N40 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU5N40 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ , 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0,July 2005
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diode in 400
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