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CSD87503Q3ET Texas Instruments 30-V Dual N-Channel MOSFET, Common Source 8-VSON -55 to 150 visit Texas Instruments
CSD87503Q3E Texas Instruments 30-V Dual N-Channel MOSFET, Common Source 8-VSON -55 to 150 visit Texas Instruments
V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil

mosfet 7503

Catalog Datasheet MFG & Type PDF Document Tags

mosfet 7503

Abstract: mosfet to ignition coil CONDUCTIVITY-MODULATED FETS vs FORWARD BLOCKING VOLTAGE. The MOSFET on-state resistance is contributed to primarily , Semiconductor Corporation May 1992 AN-7503 manufacturing point of view, since MOSFETs, with their very , , high-voltage MOSFETs. A change in the horizontal geometry of the MOSFET can lower the specific on-state , , the extended drain region of the MOSFET generally contributes the most to the on-state resistance in , resistance per unit area, is about 10 times less than in a standard MOSFET at the 400V BVDSS level, as shown
Fairchild Semiconductor
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mosfet to ignition coil

Abstract: 12v DC motor speed control using scr MOSFET on-state resistance is contributed to primarily by three components of the transistor: the MOS , has its limitations from a ©2001 Fairchild Semiconductor Corporation May 1992 AN-7503 , low-on-state-resistance, high-voltage MOSFETs. A change in the horizontal geometry of the MOSFET can lower the specific , earlier, the extended drain region of the MOSFET generally contributes the most to the on-state , specific on-state resistance per unit area, is about 10 times less than in a standard MOSFET at the 400V
Fairchild Semiconductor
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pt 4115 led driver

Abstract: an7527 Designs (175 K) Jul 19, 2002 AN-7510: AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring , The L2FET: A 5 Volt GateDrive Power MOSFET (171 K) Jul 19, 2002 AN-42046: Application Note 42046 , Supply for LCD Monitor Use (232 K) Jul 19, 2002 AN-7503: AN-7503 The Application Of , AC-Motor Speed Control (493 K) Jul 19, 2002 AN-9010: AN-9010 MOSFET Basics (352 K) Jul 19, 2002 FAN5235-PB , -7506: AN-7506 Spicing-Up Spice II Software For Power MOSFET Modeling (242 K) Jul 19, 2002 AN-9012: AN
Fairchild Semiconductor
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pt 4115 led driver an7527 AN-7527 AN-7501 an5043 AN-7502 BUT12/12A BUT12 BUT12A 54TYP AN-822 AN-881

d 42030 transistor

Abstract: AN-7505 Waveforms Of The L2FET: A 5 Volt GateDrive Power MOSFET (171 K) Jul 19, 2002 AN-7510: AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options (216 K) Jul 19, 2002 AN-7511: AN , Spice II Software For Power MOSFET Modeling (242 K) Jul 19, 2002 AN-9018-3: AN-9018-3 (Part 3 of 3 , -7507 SP600 and SP601 an HVIC MOSFET/IGT Driver for Half-Bridge Topologies (421 K) Jul 19, 2002 AN-4102: AN , -9010 MOSFET Basics (352 K) Jul 19, 2002 ABR-42022: ABR-42022 ML4833 220V Non-Dimming Ballast Design (68 K) Jul
Fairchild Semiconductor
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FAN6800 d 42030 transistor AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 BUT11/11A BUT11 BUT11A AN-9019 AN-140 AN-4101

226mJ

Abstract: hfu1n65s BVDSS = 650 V RDS(on) typ = 10.5 HFD1N65S / HFU1N65S ID = 0.9 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N65S Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ , 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05
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226mJ

RG 702 Diode

Abstract: hfu2n60s BVDSS = 600 V RDS(on) typ = 4.2 HFD2N60S / HFU2N60S ID = 1.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N60S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N60S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC , -251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2
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RG 702 Diode 702 D-PAK HFU2N60

hfu4n50

Abstract: BVDSS BVDSS = 500 V RDS(on) HFD4N50 / HFU4N50 typ = 2.0 ID = 2.6 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD4N50 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU4N50 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ , 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1
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BVDSS

HFD2N60

Abstract: BVDSS = 600 V RDS(on) typ = 4.0 HFD2N60 / HFU2N60 ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N60 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N60 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC , 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0
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HFD1N60S

Abstract: hfu1n60s BVDSS = 600 V RDS(on) typ = 10 HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N60S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU1N60S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC , 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ
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453 oc

hfu1n80

Abstract: BVDSS = 800 V RDS(on) typ = 13 HFD1N80 / HFU1N80 ID = 1.0 A 800V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design HFD1N80 Superior Avalanche Rugged Technology Robust Gate Oxide Technology D Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area G Lower RDS(ON) : 13 (Typ.) @VGS=10V 100% Avalanche Tested Symbol , 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW
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HFU1N60

Abstract: BVDSS = 600 V RDS(on) typ = 9.5 HFD1N60 / HFU1N60 ID = 0.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N60 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU1N60 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC , 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW
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hfu1n65

Abstract: BVDSS = 650 V RDS(on) typ = 10.5 HFD1N65 / HFU1N65 ID = 0.8 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N65 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ , 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0,Apr 2006
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hfu5n50s

Abstract: hfd5n50 BVDSS = 500 V RDS(on) typ = 1.2 HFD5N50S / HFU5N50S ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD5N50S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU5N50S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC , -251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2
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hfd5n50 HFD5N50S/HFU5N50S

RG 702 Diode

Abstract: DIODE 60 A BVDSS = 650 V RDS(on) typ = 4.5 HFU2N65 ID = 1.6 A 650V N-Channel MOSFET I-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.5 (Typ.) @VGS=10V , TO-251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3
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DIODE 60 A

hfu5n65s

Abstract: BVDSS = 650 V RDS(on) typ = 2.3 HFD5N65S / HFU5N65S ID = 4.0 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD5N65S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU5N65S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC , 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ
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hfu6n40s

Abstract: BVDSS = 400 V RDS(on) typ = 0.83 HFD6N40S / HFU6N40S ID = 4.5 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD6N40S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU6N40S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ , 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW
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hfu2n70s

Abstract: HFU2 BVDSS = 700 V RDS(on) typ = 5.0 HFD2N70S / HFU2N70S ID = 1.5 A 700V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N70S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N70S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC , -251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2
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HFU2 mosfet DPAK

hfu1n70

Abstract: mosfet hfu1n70 BVDSS = 700 V RDS(on) typ = 14.0 HFD1N70 / HFU1N70 ID = 0.8 A 700V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N70 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ , -251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2
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mosfet hfu1n70

mosfet VDS 650V ID 6A TO 252

Abstract: RG 702 Diode BVDSS = 650 V RDS(on) typ = 5.0 HFD2N65S / HFU2N65S ID = 1.6 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N65S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N65S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC , -251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2
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mosfet VDS 650V ID 6A TO 252 66 6602

diode in 400

Abstract: hfu5n40 BVDSS = 400 V RDS(on) typ = 1.27 HFD5N40 / HFU5N40 ID = 3.4 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD5N40 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU5N40 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ , 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ SEMIHOW REV.A0,July 2005
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diode in 400
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