500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Direct from the Manufacturer

Part Manufacturer Description PDF & SAMPLES
POWEREST Texas Instruments Power Estimation Tool (PET)
POE-PD-POWER-REF Texas Instruments LM5072 5V out 25W IEEE 802.3at Compliant POE+ PD Power Reference Design
SOLARMAGIC-SOLARPOWEROPTIMIZER-REF Texas Instruments SolarMagic SM3320-RF-EV Solar Power Optimizer with RF Communications Reference Design
MSP430-3P-PCC-LIFETIMEPOWEREVALDEVKT Texas Instruments Lifetime Power? Evaluation and Development Kit
RF-HDT-SJLS-G1 Texas Instruments
RF-HDT-SNLE-G1 Texas Instruments TAG-IT(TM) HF-I STANDARD TRANSPONDER CHIP (WAFER, INKED, GRIND, SAWN ON TAPE)

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : Y-IAR-EW78K-FULL-MOBILE Supplier : Renesas Electronics Manufacturer : Avnet Stock : - Best Price : €2720.00 Price Each : €2720.00
Part : Y-IAR-EWRL78-FULL-MOBILE Supplier : Renesas Electronics Manufacturer : Avnet Stock : - Best Price : €3196.00 Price Each : €3196.00
Part : Y-IAR-EWV850-FULL-MOBILE Supplier : Renesas Electronics Manufacturer : Avnet Stock : - Best Price : €4080.00 Price Each : €4080.00
Part : APRDMOBILE Supplier : Akro-Mils Manufacturer : Newark element14 Stock : - Best Price : $167.2900 Price Each : $185.88
Part : HS501Z STEP UNIT MOBILE Supplier : GPC INDUSTRIES Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

mobile rf power amplifier transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: .54 TDMA Cellular Phone RF Power Amplifier Modules For PA PF0210 PF0231 Power Module for IS.54 Mobile , 3.3V 12 Hitachi Land Mobile Radio/Special Mobile Radio RF Power Amplifier Modules For PA , AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 PF0040 PF0042 PF0045A PF0065 , -bit Microcontroller with 13MHz Frequency at 3.3V 6 Hitachi IS.95 CDMA Cellular Phone RF Power Amplifier M , Power Amplifier Modules For PA PF0030 PF0045A PF0231 Power Module for AMPS Mobile and CDPD Power Module -
OCR Scan
HWCB613 varicap diodes BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier gsm module with microcontroller hitachi SAW Filter p channel mosfet PF0065A HWCA602 HWCB602 HWCA606 HWCB606 HWCA613
Abstract: Transmitters Power Amplifier Name Power Amplifier Symbol Function Key Parameters Typical Markets RF up , . 1 Input Protection RF Amplifier Frequency Conversion IF Amplifier Transmitters . 5 Modulator Gain Stages & Driver Power Amplifier T/R Switch AGC Detector Market-to-Part Quick , Cellular & cordless telephones · 900 MHz ISM band Wireless Data RF Tags & RF/ID Wireless modems · Mobile , Wireless Data RF Tags & RF/ID Protects the receiver from damage by high power input signals Loss (dB) - Hewlett-Packard
Original
2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE PIN DIODE DRIVER CIRCUITS DCS-1800 HPMX-3003 MGA-82563 MGA-83563 HPMX-5001 HPMX-5002
Abstract: amplifier topology Traditional LDMOS Doherty RF power amplifiers are based on the Class-AB linear mode , more efficient RF power amplifier are favorably compounded because the RF PA is located at the far end , transistor-based RF PA with a broadband Chireix power combiner. NXP is committed to delivering a power amplifier , radio base station transceiver signal chain - the RF power amplifier. Serendipitously, because the RF , Multiplexing OMP Overmolded Plastic PA Power Amplifier PAPR Peak-to-Average Power Ratio RF NXP Semiconductors
Original
4G base station power amplifier
Abstract: Pin No. Pin Name I/O Power supply terminal for channel RF. Output terminal for the limiter amplifier. 4 DoRF O VPRF Charge pump power supply terminal for channel RF. 6 GNDDRF , lower power consumption, we will launch new products tailored to the needs of mobile communication , Error Leak Power During Maximum Output Limiter Amplifier RSSI ACP2 -68 dB , Vector Error Leak Power During Maximum Output Limiter Amplifier RSSI ACP2 -68 Fujitsu
Original
MB15G125 5.1 channel converter circuit diagram DTC TCXO fujitsu power amplifier GHz fujitsu rf power amplifier 49 internal block diagram of mobile phone MB39A102
Abstract: RF LDMOS High Power Transistor (continued) RF LDMOS High Power Transistor Amplifier Line­ups , RF High Power Transistors Our LDMOS technology is ideally suited for RF power amplifier applications , applications. RF LDMOS High Power Transistors Mobile ­ To 520 MHz Frequency Band(37) Device Pout , TECHNOLOGY SELECTOR GUIDE RF LDMOS High Power Transistor (continued) Cellular ­ To 1.0 GHz ­ , MOTOROLA 7 RF LDMOS High Power Transistor (continued) 4 MRF372 1 · · · 8 MRF374A Motorola
Original
MRF286 MHL9838 MRF210305 High frequency MRF transistor mrf284 Curtice SG384/D
Abstract: RF Power Transistors Featuring â'overlayâ' Construction For HF-VHF-UHF Microwave , MHz (typ) â'"3 dB Bandwidth â  80 dB (typ) AGC range @ 1.75 MHz RF Amplifier RCA-CA3004 $2.25 , = 6 V , VE = - 6 V E â  input offset voltage 1 mV (max) (CA3006) RF Amplifier RCA-CA3028A $ .89 j8 d 0^ DC Amplifier RCA-CA3028B $1.25 (8-|e*d I U-O) â  20 dB (typ) cascode power , $1.25 (d ip ) â  drives audio output transistor directly High-Gain Amplifier/ Limiter/Detector -
OCR Scan
rca 2n3375 2N2876 RCA TO60 TRANSISTORS RCA RF POWER TRANSISTOR rca power transistor CD2152 000-S 2N1492 RCA-CA3000 RCA-CA3001 RCA-CA3002 RCA-CA3005
Abstract: amplifier and NPN transistor. The differential amplifier output uses an emitter-follower circuit. â'¢ RF amplifier The output signal of a grounded emitter circuit is output via an emitter-follower circuit. The RF , . Mixer, IF Amplifier The mixer is an active, double-balanced mixer. The LO and RF outputs can be , power supply and connects to the IF amplifier in the next stage. The IF amplifier consists of a differential amplifier with an emitter-follower output. 2. RF Amplifier The output signal of a -
OCR Scan
DS06-70103-1E MB54600 MB546 FPT-20P-M03 FPT-34P-M03
Abstract: migration, power amplifier module (PAM) solutions for handset and mobile devices are now moving away from , ] N. Schlumpf and et al, â'A Fast Modulator for Dynamic Supply Linear RF Power Amplifier,â' IEEE , Challenges and Requirements of Multimode Multiband Power Amplifiers for Mobile Applications Nick , considerations relevant to power amplifier design. understanding of system requirements and architectural , ] Index Terms â'" Multimode, multiband, MMMB, power amplifiers, PA, PAM, amplification, mobile, handset Skyworks Solutions
Original
CDMA2000
Abstract: < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H4452M1A is a 60-watt RF MOSFET Amplifier Module for , .RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed , .2014 1 PACKAGE CODE: H2M < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance , change without notice. Publication Date :Jan.2014 2 â'" â'" < Silicon RF Power Modules Mitsubishi
Original
440-520MH 520-MH
Abstract: power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile , < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5 , < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE , electric wave obstacle for equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER Mitsubishi
Original
378-470MH 470-MH
Abstract: < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module , .RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed , RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 , :Jun.2013 1 < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W Mitsubishi
Original
144-148MH 136-174MH 148-MH RA80H1415M1-201
Abstract: < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5 , MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in , sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power , the gate voltages and controlling the output power with the input power. RF Input (Pin) 2 Mitsubishi
Original
Abstract: RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were Mitsubishi
Original
806-870MH 870-MH RA20H8087M-101
Abstract: RA30H1317M RoHS Compliance , DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The , equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of , , please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not Mitsubishi
Original
175-MH 135-175MH RA30H1317M-101
Abstract: RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5 , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were Mitsubishi
Original
400-470MH RA13H4047M-101
Abstract: philosophy and the design of a new generation of RF power transistors which, for Land Mobile products , amplifier design would be extremely difficult. High power RF transistors developed for these applications , Sector. They will be rated at 60 watts output power for application in mobile radio­telephones (12 V , base stations and high power mobiles it is not uncommon for the amplifier output stage to have , power of current 800 MHz transistors does present a number of problems: larger transistor die would Motorola
Original
AN1530 transistor j326 Inside the RF Power Transistor MRF898 Nippon capacitors TRANSISTOR D 1978 AN1530/D
Abstract: < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5 , < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE , THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not , of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF Mitsubishi
Original
400-470MHz
Abstract: RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for , RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE , THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not , of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF Mitsubishi
Original
Abstract: RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were Mitsubishi
Original
896-941MH 941-MH RA20H8994M-101
Abstract: RA30H0608M RoHS Compliance , DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to 88-MHz range. The , MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in , sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power , RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE Mitsubishi
Original
88-MH 66-88MH RA30H0608M-101
Showing first 20 results.