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POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
TRF7610PWP Texas Instruments Power Amplifier IC For GSM 24-HTSSOP visit Texas Instruments
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil

mobile rf power amplifier transistor

Catalog Datasheet MFG & Type PDF Document Tags

varicap diodes

Abstract: BIPOLAR TRANSISTOR .54 TDMA Cellular Phone RF Power Amplifier Modules For PA PF0210 PF0231 Power Module for IS.54 Mobile , 3.3V 12 Hitachi Land Mobile Radio/Special Mobile Radio RF Power Amplifier Modules For PA , AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 PF0040 PF0042 PF0045A PF0065 , -bit Microcontroller with 13MHz Frequency at 3.3V 6 Hitachi IS.95 CDMA Cellular Phone RF Power Amplifier M , Power Amplifier Modules For PA PF0030 PF0045A PF0231 Power Module for AMPS Mobile and CDPD Power Module
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HWCB613 varicap diodes BIPOLAR TRANSISTOR hitachi SAW Filter p channel mosfet dual gate mosfet in vhf amplifier gsm module with microcontroller PF0065A HWCA602 HWCB602 HWCA606 HWCB606 HWCA613

2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: 8 pin IC 34063 Transmitters Power Amplifier Name Power Amplifier Symbol Function Key Parameters Typical Markets RF up , . 1 Input Protection RF Amplifier Frequency Conversion IF Amplifier Transmitters . 5 Modulator Gain Stages & Driver Power Amplifier T/R Switch AGC Detector Market-to-Part Quick , Cellular & cordless telephones · 900 MHz ISM band Wireless Data RF Tags & RF/ID Wireless modems · Mobile , Wireless Data RF Tags & RF/ID Protects the receiver from damage by high power input signals Loss (dB) -
Hewlett-Packard
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MGA-82563 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM 8 pin IC 34063 44xx HP RF TRANSISTOR GUIDE INA-10386 BPSK transmitters DCS-1800 HPMX-3003 MGA-83563 HPMX-5001 HPMX-5002

4G base station power amplifier

Abstract: amplifier topology Traditional LDMOS Doherty RF power amplifiers are based on the Class-AB linear mode , more efficient RF power amplifier are favorably compounded because the RF PA is located at the far end , transistor-based RF PA with a broadband Chireix power combiner. NXP is committed to delivering a power amplifier , radio base station transceiver signal chain - the RF power amplifier. Serendipitously, because the RF , Multiplexing OMP Overmolded Plastic PA Power Amplifier PAPR Peak-to-Average Power Ratio RF
NXP Semiconductors
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4G base station power amplifier

5.1 channel converter circuit diagram

Abstract: mobile rf power amplifier transistor Pin No. Pin Name I/O Power supply terminal for channel RF. Output terminal for the limiter amplifier. 4 DoRF O VPRF Charge pump power supply terminal for channel RF. 6 GNDDRF , lower power consumption, we will launch new products tailored to the needs of mobile communication , Error Leak Power During Maximum Output Limiter Amplifier RSSI ACP2 -68 dB , Vector Error Leak Power During Maximum Output Limiter Amplifier RSSI ACP2 -68
Fujitsu
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MB15G125 5.1 channel converter circuit diagram mobile rf power amplifier transistor DTC TCXO quadrature modulator fujitsu rf power amplifier 49 MB39A102

HP RF TRANSISTOR GUIDE

Abstract: MRF286 RF LDMOS High Power Transistor (continued) RF LDMOS High Power Transistor Amplifier Line­ups , RF High Power Transistors Our LDMOS technology is ideally suited for RF power amplifier applications , applications. RF LDMOS High Power Transistors Mobile ­ To 520 MHz Frequency Band(37) Device Pout , TECHNOLOGY SELECTOR GUIDE RF LDMOS High Power Transistor (continued) Cellular ­ To 1.0 GHz ­ , MOTOROLA 7 RF LDMOS High Power Transistor (continued) 4 MRF372 1 · · · 8 MRF374A
Motorola
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MRF286 MRF210305 MHL9838 High frequency MRF transistor Curtice motorola MRF SG384/D

rca 2n3375

Abstract: 2N3553 equivalent RF Power Transistors Featuring â'overlayâ' Construction For HF-VHF-UHF Microwave , MHz (typ) â'"3 dB Bandwidth â  80 dB (typ) AGC range @ 1.75 MHz RF Amplifier RCA-CA3004 $2.25 , = 6 V , VE = - 6 V E â  input offset voltage 1 mV (max) (CA3006) RF Amplifier RCA-CA3028A $ .89 j8 d 0^ DC Amplifier RCA-CA3028B $1.25 (8-|e*d I U-O) â  20 dB (typ) cascode power , $1.25 (d ip ) â  drives audio output transistor directly High-Gain Amplifier/ Limiter/Detector
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RCA-CA3000 rca 2n3375 2N3553 equivalent RCA RF POWER TRANSISTOR 2N5070 CA3016 RCA Transistors 000-S 2N1492 RCA-CA3001 RCA-CA3002 RCA-CA3005
Abstract: amplifier and NPN transistor. The differential amplifier output uses an emitter-follower circuit. â'¢ RF amplifier The output signal of a grounded emitter circuit is output via an emitter-follower circuit. The RF , . Mixer, IF Amplifier The mixer is an active, double-balanced mixer. The LO and RF outputs can be , power supply and connects to the IF amplifier in the next stage. The IF amplifier consists of a differential amplifier with an emitter-follower output. 2. RF Amplifier The output signal of a -
OCR Scan
DS06-70103-1E MB54600 MB546 FPT-20P-M03 FPT-34P-M03

Challenges and Requirements of Multimode Multiband Power Amplifiers for Mobile Applications

Abstract: migration, power amplifier module (PAM) solutions for handset and mobile devices are now moving away from , ] N. Schlumpf and et al, â'A Fast Modulator for Dynamic Supply Linear RF Power Amplifier,â' IEEE , Challenges and Requirements of Multimode Multiband Power Amplifiers for Mobile Applications Nick , considerations relevant to power amplifier design. understanding of system requirements and architectural , ] Index Terms â'" Multimode, multiband, MMMB, power amplifiers, PA, PAM, amplification, mobile, handset
Skyworks Solutions
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Challenges and Requirements of Multimode Multiband Power Amplifiers for Mobile Applications CDMA2000
Abstract: < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H4452M1A is a 60-watt RF MOSFET Amplifier Module for , .RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed , .2014 1 PACKAGE CODE: H2M < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance , change without notice. Publication Date :Jan.2014 2 â'" â'" < Silicon RF Power Modules Mitsubishi
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440-520MH 520-MH
Abstract: power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile , < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5 , < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE , electric wave obstacle for equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER Mitsubishi
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378-470MH 470-MH

RA80H1415M1

Abstract: < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module , .RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed , RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 , :Jun.2013 1 < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W
Mitsubishi
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144-148MH 136-174MH 148-MH RA80H1415M1-201
Abstract: < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5 , MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in , sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power , the gate voltages and controlling the output power with the input power. RF Input (Pin) 2 Mitsubishi
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Abstract: RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were Mitsubishi
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806-870MH 870-MH RA20H8087M-101
Abstract: RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5 , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were Mitsubishi
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400-470MH RA13H4047M-101
Abstract: RA30H1317M RoHS Compliance , DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The , equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of , , please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not Mitsubishi
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175-MH 135-175MH RA30H1317M-101

transistor j326

Abstract: AN1530 philosophy and the design of a new generation of RF power transistors which, for Land Mobile products , amplifier design would be extremely difficult. High power RF transistors developed for these applications , Sector. They will be rated at 60 watts output power for application in mobile radio­telephones (12 V , base stations and high power mobiles it is not uncommon for the amplifier output stage to have , power of current 800 MHz transistors does present a number of problems: larger transistor die would
Motorola
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AN1530 transistor j326 uhf amplifier design Transistor TRANSISTOR D 1978 MRF898 Inside the RF Power Transistor AN1530/D

400-470MHz

Abstract: < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5 , < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE , THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not , of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF
Mitsubishi
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400-470MHz
Abstract: RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for , RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE , THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not , of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF Mitsubishi
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Abstract: RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were Mitsubishi
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896-941MH 941-MH RA20H8994M-101
Abstract: RA30H0608M RoHS Compliance , DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to 88-MHz range. The , MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in , sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power , RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE Mitsubishi
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88-MH 66-88MH RA30H0608M-101
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