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mobile rf power amplifier transistor

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Abstract: Cellular Phone RF Power Amplifier Modules For PA PF0210 PF0210 PF0231 PF0231 Power Module for IS.54 Mobile Power Module , 3.3V 12 Hitachi Land Mobile Radio/Special Mobile Radio RF Power Amplifier Modules For PA , AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 PF0032 PF0040 PF0040 PF0042 PF0042 PF0045A PF0045A PF0065 PF0065 , Microcontroller with 13MHz Frequency at 3.3V 6 Hitachi IS.95 CDMA Cellular Phone RF Power Amplifier M , Power Amplifier Modules For PA PF0030 PF0030 PF0045A PF0045A PF0231 PF0231 Power Module for AMPS Mobile and CDPD Power Module ... OCR Scan
datasheet

14 pages,
214.12 Kb

hwcb HWCA203A hitachi SAW Filter Hitachi PF0030 MOSFET RF POWER TRANSISTOR VHF Mosfet transistor hitachi varicap diodes dual diode mixer RF POWER TRANSISTOR NPN vhf Rf power transistor mosfet p channel mosfet P Channel D- MOSFET Hitachi MOSFET PF0032 PF0040 PF0032 abstract
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Abstract: RF3934 RF3934 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50 Operation RF IN VGQ Pin 1 (CUT) RF OUT VDQ , package that provide wideband gain and power performance in a single amplifier. Ordering Information RF3934 RF3934 GaN Wide-Band Power Amplifier Optimum Technology Matching® Applied GaAs HBT GaAs MESFET ... Original
datasheet

2 pages,
95.31 Kb

GaN BJT DSB070530 RF3934 Gan transistor GaN amplifier 120W mobile rf power amplifier transistor GaN amplifier RF3934 abstract
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Abstract: RF3931 RF3931 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Flanged Ceramic Features Peak Power=30W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50 Operation RF IN VGQ Pin 1 (CUT) RF OUT VDQ , package that provide wideband gain and power performance in a single amplifier. Ordering Information RF3931 RF3931 GaN Wide-Band Power Amplifier Optimum Technology Matching® Applied GaAs HBT GaAs MESFET ... Original
datasheet

2 pages,
96 Kb

rf gan amplifier mobile rf power amplifier transistor GaN BJT GaN amplifier DSB070829 Gan transistor RF3931 RF3931 abstract
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Abstract: RF3933 RF3933 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features Peak Power=90W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50 Operation RF IN VGQ Pin 1 (CUT) RF OUT VDQ , package that provide wideband gain and power performance in a single amplifier. Ordering Information RF3933 RF3933 GaN Wide-Band Power Amplifier Optimum Technology Matching® Applied GaAs HBT GaAs MESFET ... Original
datasheet

2 pages,
95.47 Kb

GaN amplifier DSB070828 BJT amplifiers RF3933 rf gan amplifier GaN BJT GAN high power amplifier mobile rf power amplifier transistor GaN TRANSISTOR RF3933 abstract
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Abstract: Microstrip design combined w ith the use of the m ost modern bipolar RF power transistor technol ogy assures a reliable, cost effective complete power amplifier. Custom versions w ith modified electrical and , 400-440 MHz UNEAR POWER AMPLIFIER · Class AB M AXIM UM RATINGS Rating Collector Voltage Supply , base plate. ICC IRL * Gr - 10 No degradation in power output i0 .5 dB M O TO R O LA RF D , SEM ICONDUCTOR TECHNICAL DATA MOTOROLA The RF Line AMR440-60 AMR440-60 L in e a r P o w e r A m ... OCR Scan
datasheet

1 pages,
21.2 Kb

datasheet abstract
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Abstract: DESCRIPTION The BGV145Aisa RF amplifier module, designed for use in transminers of mobile communications equipment powered by vehicles with 12.5 V battery supplies. The module is a two-stage transistor amplifier , components that make up the matching and bias circuits. The module will provide 29 W RF power into a 50 £i , DESCRIPTION output input ground flange PARAMETER frequency range RF output power RF power gain , terminal voltage RF input power RF output power (see Fig.2) storage temperature range heatsink operating ... OCR Scan
datasheet

7 pages,
132.44 Kb

VHF Amplifier Chip rf amplifier module vHF amplifier module fx1115 BGY145A BGY145A abstract
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Abstract: transistor amplifier and consists of two RF npn transistors mounted on a ceramic substrate, together with , DESCRIPTION PINNING -SOT183A -SOT183A PIN CONGIGURATION An RF amplifier module designed for use in , f Pl Gp n V si, Vs2 frequency range RF output power RF power gain efficiency DC supply voltage , input terminal voltage RF output terminal voltage RF input power RF output power (see Fig.2) storage , current RF output power RF power gain efficiency 2nd harmonic output 3rd harmonic output input VSWR with ... OCR Scan
datasheet

7 pages,
130.82 Kb

BGY145C BGY145C abstract
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Abstract: Vdc Vdc Vdc mA ♦Pulsed through 25 MH Inductor RF CHARACTERISTICS: SMALL SIGNAL • Output Capacitance Coh . Vcb= 15.0 V - 8.5 PF RF CHARACTERISTICS; LARGE SIGNAL Amplifier power out Amplifier power gain Po V - 175 MHz/12.5 V ' 15.0 6.3 - Watts dB is THOMSON-CSF - /ó/Y/->C , TRANSISTOR c DESCRIPTION This epitaxial silicon NPN-planar transistor is designed primarily for VHF mobile , mobile and marine transmitters • Withstands severe mismatch under operating conditions • Low inductance ... OCR Scan
datasheet

1 pages,
48.54 Kb

SD1014-1 mobile rf power amplifier transistor G00QG17 G00QG17 abstract
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Abstract: Semiconductors' capabilities in Performance overview RF power amplifier integration, offering , 60 W, CDMA amplifier Low-cost, high-performance RF solution solution for CDMA base stations , integration makes it significantly less expensive to mass produce. Semiconductors Key RF power , . Most RF Power Amplifiers (RFPAs) used in cellular base stations consist of 3 amplifying stages: the , singleended transistors on the market (2 x BLF0810-180 BLF0810-180), our 60 W CDMA amplifier solution offers an ... Original
datasheet

2 pages,
56.89 Kb

BLF0810-180 BGF802-20 mobile rf power amplifier transistor BGF802-20 abstract
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Abstract: BGY46A BGY46A _ Jk . UHF POWER AMPLIFIER MODULE FOR DETAILED INFORMATION SEE THE , consists o f a two-stage RF am plifier using npn transistor chips w ith lumped element matching components , (terminal 4) RF drive power RF load power Efficiency M ECH ANICAL D A T A VS1 V S2 PD Pl V continuous wave , mobile com munication equipment operating directly from a 9.6 V electrical supply. The module w ill , a ci Q " 3,0 -2,5 6,0 max Lead reference 1. RF input 2. Earth 3. 4. 5. 6. V Si Vs2 Earth RF ... OCR Scan
datasheet

1 pages,
21.17 Kb

BGY46A BGY46A abstract
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Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
MOSFETs for DC-DC conversion Managing mobile power with smart power and battery management BGY284E BGY284E BGY284E BGY284E, GSM/GPRS/EDGE power amplifier BGY288 BGY288 BGY288 BGY288 GSM/GPRS quad-band amplifier GSM quad-band amplifier BGY284E BGY284E BGY284E BGY284E, GSM/GPRS/EDGE power amplifier BGY288 BGY288 BGY288 BGY288 GSM/GPRS quad-band amplifier BGY502 BGY502 BGY502 BGY502, dualband front-end module Mobile Discretes BF485PN BF485PN BF485PN BF485PN: Dual mode surface mount transistor Baseband & RF
www.datasheetarchive.com/files/philips/literature/communication-v1.html
Philips 07/06/2005 31.36 Kb HTML communication-v1.html
Simplified Approach to VHF Power Amplifier Design AN847/D AN847/D AN847/D AN847/D Tuning Diode Design Techniques AN878/D AN878/D AN878/D AN878/D VHF MOS Power Applications AN955/D AN955/D AN955/D AN955/D A Cost Effective VHF Amplifier for Land Mobile Radios Understanding RF Data Sheet Parameters AR141/D AR141/D AR141/D AR141/D Applying Power MOSFETs in Class D/E RF Power Amplifier High Power RF Amplifier Design AR305/D AR305/D AR305/D AR305/D Building Push-Pull, Multioctave, VHF Power Amplifiers Library location and defining a search. RF AN438/D AN438/D AN438/D AN438/D 300W, 88 - 108MHz Amplifier Using the
www.datasheetarchive.com/files/motorola/design-n/lit/html/br135a/rf.htm
Motorola 25/11/1996 4.95 Kb HTM rf.htm
power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured applications, has been characterized for global systems for mobile communications (GSM) power amplifier RF POWER AMPLIFIER 4.8 VOLT GSM APPLICATION BRIEF (SWRA009 SWRA009 SWRA009 SWRA009) TRF7003 TRF7003 TRF7003 TRF7003 RF POWER MOSFET S-PARAMETER BOARD (SWRA007 SWRA007 SWRA007 SWRA007) TRF8011 TRF8011 TRF8011 TRF8011 AND 2 X TRF7003 TRF7003 TRF7003 TRF7003 RF POWER AMPLIFIER 4.8 VOLTS GSM APPLICATION (SWRA013 SWRA013 SWRA013 SWRA013) TRF8011 TRF8011 TRF8011 TRF8011 AND TRF7003 TRF7003 TRF7003 TRF7003 RF POWER AMPLIFIER 3.6 VOLT APPLICATION (SWRA015 SWRA015 SWRA015 SWRA015) Table Data Updated on: 1/7/2000
www.datasheetarchive.com/files/texas-instruments/data/wwwti~1.com/sc/docs/products/analog/trf700~1.htm
Texas Instruments 28/01/2000 14.44 Kb HTM trf700~1.htm
power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured applications, has been characterized for global systems for mobile communications (GSM) power amplifier RF POWER AMPLIFIER 4.8 VOLT GSM APPLICATION BRIEF (SWRA009 SWRA009 SWRA009 SWRA009) TRF7003 TRF7003 TRF7003 TRF7003 RF POWER MOSFET S-PARAMETER BOARD (SWRA007 SWRA007 SWRA007 SWRA007) TRF8011 TRF8011 TRF8011 TRF8011 AND 2 X TRF7003 TRF7003 TRF7003 TRF7003 RF POWER AMPLIFIER 4.8 VOLTS GSM APPLICATION (SWRA013 SWRA013 SWRA013 SWRA013) TRF8011 TRF8011 TRF8011 TRF8011 AND TRF7003 TRF7003 TRF7003 TRF7003 RF POWER AMPLIFIER 3.6 VOLT APPLICATION (SWRA015 SWRA015 SWRA015 SWRA015) Table Data Updated on: 1/7/2000
www.datasheetarchive.com/files/texas-instruments/data/www.ti.com/sc/docs/products/analog/trf7003.html
Texas Instruments 29/01/2000 14.44 Kb HTML trf7003.html
Low Voltage Silicon RF Power Amplifier Predriver QuickView Data Sheet: CONTAINS KEY General Description The MAX2430 MAX2430 MAX2430 MAX2430 is a versatile, silicon RF power amplifier that operates directly from time-division multiple-access (TDMA) transmissions. An external capacitor sets the RF output power envelope ramp time. External power control is also possible over a 15dB range. The amplifier's input is matched components. The MAX2430 MAX2430 MAX2430 MAX2430 is ideal as a driver amplifier for portable and mobile telephone systems, or as a
www.datasheetarchive.com/files/maxim/0009/quick257.htm
Maxim 04/04/2001 6.72 Kb HTM quick257.htm
Docs Evaluation Modules Order Samples RF Consultants Frequently Asked Questions Pricing 1 MOSFET Power Amplifier Features: Wide operating frequency range up to 1000 MHz High output power: Typically 32.5 dBm @ 4.8V ESD protection on gate and drain Summary: The TRF7003 TRF7003 TRF7003 TRF7003 power amplifier is a silicon wireless applications, has been characterized for global systems for mobile communications (GSM) power
www.datasheetarchive.com/files/texas-instruments/data/sc/docs/rf/products/trf7003.htm
Texas Instruments 08/02/1999 11.4 Kb HTM trf7003.htm
SiGe enables: Lower noise figures (LF and RF range), lower power consumption and Power amplifiers (PA) for transmitters in cordless and mobile phones (DECT, GSM, DCS, PCS, CDMA, AMPS Transmit/Receive Frontend with power amplifier, low-noise amplifier and T/R switch amplifier especially SiGe - The Advanced Technology for Mobile not sacrifice the economies of silicon manufacturing High power output makes designs
www.datasheetarchive.com/files/temic/hn/communic/sigeho.htm
Temic 20/11/1998 11.35 Kb HTM sigeho.htm
Datasheets MSC82003 MSC82003 MSC82003 MSC82003 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS 5 812 Datasheets SD1274-01 SD1274-01 SD1274-01 SD1274-01 VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS 4 812 Datasheets SD1275-01 SD1275-01 SD1275-01 SD1275-01 VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS 4 812 Datasheets ST13003 ST13003 ST13003 ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 6 750 Size (kb) 1000 Datasheets AM82223-010 AM82223-010 AM82223-010 AM82223-010 TELEMETRY APPLICATIONS RF & MICROWAVE
www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/458.htm
STMicroelectronics 31/03/1999 18.86 Kb HTM 458.htm
supply. The MAX2601 MAX2601 MAX2601 MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 MAX2602 MAX2602 MAX2602 includes a high-performance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process MAX2601 MAX2601 MAX2601 MAX2601, MAX2602 MAX2602 MAX2602 MAX2602 3.6V, 1W RF Power Transistors for 900MHz Applications DESCRIPTION The MAX2601/MAX2602 MAX2601/MAX2602 MAX2601/MAX2602 MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope
www.datasheetarchive.com/files/maxim/0017/quick189.htm
Maxim 02/05/2002 12.21 Kb HTM quick189.htm
MAX2430 MAX2430 MAX2430 MAX2430 is a versatile, silicon RF power amplifier that operates directly from a 3V to 5.5V supply, making driver amplifier for portable and mobile telephone systems, or as a complete power amplifier for other ) transmissions. An external capacitor sets the RF output power envelope ramp time. External power control is also Power Gain RF Power Envelope Ramping is Programmable with One External Capacitor Input Matched to 50 9.9 $1.50 NOTES AND COMMENTS Power amplifier with 100mW at 3V, power on/off ramp
www.datasheetarchive.com/files/maxim/0017/quick186-v1.htm
Maxim 02/05/2002 11.63 Kb HTM quick186-v1.htm