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ISL55014IEZ-T7 Intersil Corporation MMIC Silicon Bipolar Broadband Amplifier; SC706; Temp Range: -40° to 85°C visit Intersil Buy
ISL55015IEZ-T7 Intersil Corporation MMIC Silicon Bipolar Broadband Amplifier; SC706; Temp Range: -40° to 85°C visit Intersil Buy
ISL55016IRTZ-T7 Intersil Corporation MMIC Silicon Bipolar Differential Amplifier; DFN6; Temp Range: -40° to 85°C visit Intersil Buy
ISL55012IEZ-T7 Intersil Corporation MMIC Silicon Bipolar Broadband Amplifier; SC706; Temp Range: -40° to 85°C visit Intersil Buy
CLC5903VLA Texas Instruments RF/Microwave Up/Down Converter, RF/MICROWAVE DOWN CONVERTER, PLASTIC, QFP-128 visit Texas Instruments
TRF7610 Texas Instruments RF/Microwave Amplifier, 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER visit Texas Instruments

mitsubishi microwave

Catalog Datasheet MFG & Type PDF Document Tags

elmwood sensors ltd

Abstract: elmwood thermal switch prods) Microtest Microwave Associates Mitsubishi Electronics, Electronic Device Grp Mitsubishi Electronics, Electronic Device Grp Mitsubishi Electronics, Electronic Device Grp Mitsubishi Microwave Semi , Cable Amp RF Coax/Tyco Electronics Amptek AMT American Microwave Technology Andrew Corp/Antenna , . Datum, Timing, Test & Measurement Davis Instrument Mfg. DB Products DBS Microwave DCI Delhi-Solac , . Symmetricom Symmetricom Symmetricom Symmetricom Davis Inotek Instruments DBP Microwave Narda Microwave
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MGF1951A

Abstract: June/2004 MITSUBISHI SEMICONDUCTOR MGF1951A Microwave Power MES FET (Leadless , Tstg Storage temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum effort , =12GHz,Pin=-5dBm MITSUBISHI (1/5) June /2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF1951A Microwave Power MES FET (Leadless Ceramic Package) Fig.1 Unit : mm Top Side RWUYW , 1. Gate 2. Source 3. Drain MITSUBISHI (2/5) June /2004 June/2004 MITSUBISHI
Mitsubishi
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mitsubishi microwave

Abstract: MGF1952A June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless , June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless Ceramic , °C Tstg Storage temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum , Gain f=12GHz,Pin=-5dBm MITSUBISHI (1/5) June /2004 June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless Ceramic Package) Fig.1 Unit : mm Top
Mitsubishi
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mitsubishi microwave

mitsubishi microwave

Abstract: MGF1954A Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless , ./2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless , ./2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless , Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless Ceramic , ./2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless
Mitsubishi
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MGF1953A

Abstract: Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless , . /2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless , . /2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless , . /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless Ceramic , MITSUBISHI (4/5) Aug. /2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave
Mitsubishi
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FET Spec sheet

Abstract: mitsubishi microwave MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL , dB m MITSUBISHI ELECTRIC (1/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE , ELECTRIC (2/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS , MITSUBISHI ELECTRIC (3/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE , : 130+20¿¿m MITSUBISHI ELECTRIC (4/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE
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FET Spec sheet 4468 fet fet 4468

mitsubishi microwave

Abstract: fet 4468 MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL , MITSUBISHI ELECTRIC (1/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE , ELECTRIC (2/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS , ) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER , ) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER
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Abstract: Aug. /2004 MITSUBISHI SEMICONDUTOR MGF1954A Microwave Power MES FET (Leadless , Aug. /2004 MITSUBISHI SEMICONDUTOR MGF1954A Microwave Power MES FET (Leadless Ceramic , /5) Aug./2004 Aug. /2004 MITSUBISHI SEMICONDUTOR MGF1954A Microwave Power MES , MITSUBISHI SEMICONDUTOR MGF1954A Microwave Power MES FET (Leadless Ceramic Package) S , 3000pcs./reel Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the Mitsubishi
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Abstract: June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless , /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless Ceramic , ' MITSUBISHI (3/5) June /2004 June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave , > MGF1952A Microwave Power MES FET (Leadless Ceramic Package) Requests Regarding Safety Designs Mitsubishi , °C Tstg Storage temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum Mitsubishi
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Abstract: June/2004 MITSUBISHI SEMICONDUCTOR MGF1951A Microwave Power MES FET (Leadless , MITSUBISHI SEMICONDUCTOR MGF1951A Microwave Power MES FET (Leadless Ceramic Package) S , /2004 MITSUBISHI SEMICONDUCTOR MGF1951A Microwave Power MES FET (Leadless Ceramic , Tstg Storage temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum effort , =12GHz,Pin=-5dBm MITSUBISHI (1/5) June /2004 June/2004 MITSUBISHI SEMICONDUCTOR Mitsubishi
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Abstract: Aug. /2004 MITSUBISHI SEMICONDUTOR MGF1953A Microwave Power MES FET (Leadless , Aug. /2004 MITSUBISHI SEMICONDUTOR MGF1953A Microwave Power MES FET (Leadless Ceramic , ) Aug. /2004 Aug. /2004 MITSUBISHI SEMICONDUTOR MGF1953A Microwave Power MES FET , MITSUBISHI SEMICONDUTOR MGF1953A Microwave Power MES FET (Leadless Ceramic Package) S , MITSUBISHI SEMICONDUTOR MGF1953A Microwave Power MES FET (Leadless Ceramic Package) Requests Mitsubishi
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fet 3004

Abstract: MGFC1403 MITSUBISHI SEMICONDUCTOR MGFC1403 FOR MICROWAVE LOW-NOISE AMPLIFIERS, N-CHANNEL , ) MITSUBISHI ELECTRIC (2/6) MITSUBISHI SEMICONDUCTOR MGFC1403 FOR MICROWAVE LOW-NOISE , MITSUBISHI ELECTRIC (3/6) MITSUBISHI SEMICONDUCTOR MGFC1403 FOR MICROWAVE LOW-NOISE , /6) MITSUBISHI SEMICONDUCTOR MGFC1403 FOR MICROWAVE LOW-NOISE AMPLIFIERS , Gs N F m in. 40 - 2.3 MITSUBISHI ELECTRIC (1/6) MITSUBISHI SEMICONDUCTOR
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fet 3004 s3v1

westcode scr

Abstract: toko filters 90461431 RF, Microwave Components Your Global Source for RF, Microwave and Power , assemblies and supply the highest quality RF, Microwave and Power Conversion solutions. Prototype to , , Microwave and Power Conversion suppliers and products. Abracon Aeroflex / Inmet Aeroflex / KDI , Technologies Micronetics Microsemi Mimix Broadband Mitsubishi National Electronics NDK America NEC , Powerex Radiall Radiall - AEP Radiotronix RF, Microwave Components Raltron RES-Ingenium RF
Richardson Electronics
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westcode scr toko filters westcode diodes TOKO INDUCTORS tyco igbt KU SERIES CHEMICON capacitor G15000CR MK100104

MGF1951

Abstract: MGF1951A MITSUBISHI SEMICONDUTOR MGF1951 MGF1951A PRELIMINARY Medium Power Microwave , Tstg Storage Temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum effort , - dB V(BR)GDO Gate to Drain Breakdown Voltage IDSS VGS(off) Test Conditions MITSUBISHI (1/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET OUTLINE DRAWING (mm) Side y 2(1 2-R0.275 2-R0.20 y
Mitsubishi
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MGF1951A-01

ku Band Power GaAs FET

Abstract: Dec./2006 MITSUBISHI SEMICONDUTOR MGF1451A Microwave Power GaAs FET , > MGF1451A Microwave Power GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly , -55 to +175 (Ta=25°C ) Unit V V mA mW °C °C Mitsubishi Electric Corporation puts the maximum , dBm /W MITSUBISHI (1/3) Decl/2006 Dec./2006 MITSUBISHI SEMICONDUTOR MGF1451A Microwave Power GaAs FET TYPICAL CHARACTERISTICS (Ta=25°C) 80 70 DRAIN CURRENT ID(mA) 60
Mitsubishi
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ku Band Power GaAs FET

k MESFET S parameter

Abstract: MGF1952A-01 MITSUBISHI SEMICONDUTOR MGF1952A PRELIMINARY Medium Power Microwave MESFET , Temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum effort into making , - dB V(BR)GDO Gate to Drain Breakdown Voltage IDSS VGS(off) Test Conditions MITSUBISHI (1/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR MGF1952A PRELIMINARY Medium Power Microwave MESFET OUTLINE DRAWING (mm) Side y 2(1 2-R0.275 2-R0.20 y x y y z
Mitsubishi
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MGF1952A-01 k MESFET S parameter

MGF1953A

Abstract: October /2003 MITSUBISHI SEMICONDUTOR MGF1953A Microwave Power MES FET (Leadless , MITSUBISHI SEMICONDUTOR MGF1953A Microwave Power MES FET (Leadless Ceramic Package) TYPICAL , October /2003 MITSUBISHI SEMICONDUTOR MGF1953A Microwave Power MES FET (Leadless Ceramic , Storage temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum effort into making , =5dBm MITSUBISHI (1/4) October /2003 October /2003 MITSUBISHI SEMICONDUTOR MGF1953A
Mitsubishi
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k MESFET S parameter

Abstract: MGF1954A-01 MITSUBISHI SEMICONDUTOR MGF1954A PRELIMINARY Medium Power Microwave MESFET , Temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum effort into making , ) MITSUBISHI (1/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR MGF1954A PRELIMINARY Medium Power Microwave MESFET OUTLINE DRAWING (mm) Side y 2(1 2-R0.275 2-R0.20 y x y , ) z Drain (square shape) View A MITSUBISHI (2/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR
Mitsubishi
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MGF1954A-01

MGF1954A

Abstract: October /2003 MITSUBISHI SEMICONDUTOR MGF1954A Microwave Power MES FET (Leadless , MITSUBISHI SEMICONDUTOR MGF1954A Microwave Power MES FET (Leadless Ceramic Package) TYPICAL , October /2003 MITSUBISHI SEMICONDUTOR MGF1954A Microwave Power MES FET (Leadless Ceramic , Storage temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum effort into making , =5dBm MITSUBISHI (1/4) October /2003 October /2003 MITSUBISHI SEMICONDUTOR MGF1954A
Mitsubishi
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MGF1952A

Abstract: October /2003 MITSUBISHI SEMICONDUTOR MGF1952A Microwave Power MES FET (Leadless , /2003 October /2003 MITSUBISHI SEMICONDUTOR MGF1952A Microwave Power MES FET , °C ID Gate to source voltage (Ta=25°C ) Mitsubishi Electric Corporation puts the maximum , =12GHz,Pin=-5dBm MITSUBISHI (1/4) October /2003 October /2003 MITSUBISHI SEMICONDUTOR MGF1952A Microwave Power MES FET (Leadless Ceramic Package) Fig.1 Unit : mm Top Side +0.20
Mitsubishi
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