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Part Manufacturer Description Datasheet BUY
EHHD024A0A41-HZ GE Critical Power DC-DC Regulated Power Supply Module visit GE Critical Power
EHHD010A0B41-18HZ GE Critical Power DC-DC Regulated Power Supply Module visit GE Critical Power
EHHD036A0F41-SZ GE Critical Power DC-DC Regulated Power Supply Module visit GE Critical Power
EHHD024A0A41-SZ GE Critical Power DC-DC Regulated Power Supply Module visit GE Critical Power
EHHD036A0F41-18HZ GE Critical Power DC-DC Regulated Power Supply Module visit GE Critical Power
EHHD024A0A41-18HZ GE Critical Power DC-DC Regulated Power Supply Module visit GE Critical Power

microwave fet IC

Catalog Datasheet MFG & Type PDF Document Tags

nf025

Abstract: NE27283 -pin minimold 20-pin SSOP CD-ROM X13769XJ2V0CD00 11-2 RF and Microwave Devices IC s IQ , X13769XJ2V0CD00 11-3 RF and Microwave Devices IC s Up Converter (µ PC×××× ) Part Number Applications , CD-ROM X13769XJ2V0CD00 11-4 RF and Microwave Devices IC s Prescaler (µ PB×××× , µ PG , ­pin SSOP K-12, 8-pin ceramic CD-ROM X13769XJ2V0CD00 11-5 RF and Microwave Devices IC s , 11-7 RF and Microwave Devices IC s PLL Synthesizer (µ PB×××× ) Part Number Functions PLL
NEC
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nf025 NE27283 upc27 x-band power transistor 100W P147D NE42484 950MH 500MH PC8119T PC8120T PC8130TA PC8131TA

transistor crossreference

Abstract: Microwave Devices RF and Microwave Devices IC (Product List) AGC AMP. ( m PCxxxx, m PGxxxx) IQ Modulator/Demodulator ( m PCxxxx) IC (Typical Characteristics) Frequency vs. Power gain , Noise figure No.1 No.2 No , category Main menu RF and Microwave Devices Discrete (Product List) Dual Gate MES / MOS FET Low Noise BIP.TR. (2SC,NE) Twin TR. ( m PAxxx) Low Noise GaAs / HJ FET (NE) Twin TR. Power TR. / FET (2SC,NE , Power FET Sillicon Microwave Single TR. NE Part No. - EIAJ No. vs. Noise figure @ f = 12 GHz @ f = 4
NEC
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transistor crossreference Microwave Devices RF FET transistor GHz Power FET Cross-Reference dual gate fet

ely transformers

Abstract: number of successful monolithic microwave designs, including many first-pass M M IC designs, meeting all , microwave product family is a line of standard M M IC s. These M M IC s were designed for military , SUCCESSFUL CIRCUITS Texas Instruments engineers have been designing M M IC s since 1 9 7 9 and have created , characteristics available from the standard monolithic microwave product family are shown in Figure 1. TYPICAL , range of microwave circuits have been fabricated on GaAs at Tl. Both narrowband double-balanced and
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ely transformers

bgu7051

Abstract: sot-89 BV SMD TRANSISTOR MARKING CODE RFBFQ33 1989 ­ 1992 ­ 1996 ­ 2 GHz LDMOS 2004 ­ Gen5 LDMOS 2006 ­ 2007 ­ IC: TFF1004HN 2008 ­ , 68 3.4 RF IC , 4.4.1 IC, MMICSiGe:C _ _ 87 4.4.2 RF , Function Oscillator Function Product MMIC Package SiGe:C MMIC Product RF IC Package SiGe:C IC Product RF transistor SOT617 SOT616 Package Wideband transistor SiGe:C
NXP Semiconductors
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bgu7051 sot-89 BV SMD TRANSISTOR MARKING CODE MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications NXPRF14 JESD204A AEC100 RFBFR90 BLF578 OM7670

NEC RELAY

Abstract: transister , V850), 1999.4 Display ControllerDriver IC, General Purpose Digital IC MOS FET Power MOS FET, Signal MOS FET 1999.1 1998.5 RF & Microwave Device Silicon Microwave Monolithic IC, High frequency Silicon Transister, GaAs Devices 1998.8 RF & IC, , GaAs 1998.4 Optoelectronic Devices-NEPOC Series- Photocoupler, OCMOS FET (Solid State Relay), Infrared Transceiver 1999.1 -NEPOC- MOS FET 1998.7 NEC
NEC
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NEC RELAY transister NEC fet NEC V810 nec V830 mcu NEC Rambus 78K/0S 78K/0 16MCU 78K/IV 32MPU

filter for GPS spice

Abstract: BLF578 ­ Doherty 2007 ­ IC TFF1004HN 2008 ­ JESD204A 2009 ­ FM1kW (BLF578) (88108 MHz) 2009 ­ SiGe , 4.4.1 IC MMICSiGe 87 4.4.2 F , Function Product MMIC Package SiGe:C MMIC Product RF IC Package SiGe:C IC Product RF , Function Synth Function Buffer RF IC SiGe:C IC Type SOT616 TFF1003HN TFF1007HN , (variable gain amplifier) Function MPA (medium power amplifier) Product RF IC Package SiGe
NXP Semiconductors
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filter for GPS spice diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE MPAL2731M15 RF20105 JESD204A-DACADC JESD204A- BFR90 BFQ33 PBR941

nec book

Abstract: NEC RELAY Controller / Driver IC, General Purpose Digital IC (English) MOS FET (English) Power MOS FET, Signal MOS FET 1999.1 1998.5 RF & Microwave Devices (English) Silicon Microwave Monolithic IC, High frequency , ) Photocoupler, OCMOS FET (Solid State Relay), Infrared Transceiver 1999.1 NEC
NEC
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nec book relay book

S-10

Abstract: S-14 Amplifier and Dual-Modulus Prescaler GaAs IC Chip," IEEE Trans. Microwave Theory Tech., vol. 36, pp , RF and microwave frequencies over narrow-bands and broad-bands for both commercial and military , provided. 2. FET Design and Performance 2 The FET used in the MMIC power amplifier has a 625 , grounding and good heat sinking. The 0.4 µm gate length MSAG® FET which features outstanding performance along with remarkable robustness to burnout. A user-defined nonlinear model for this FET was developed
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S-10 S-14 high power fet amplifier schematic GaN amplifier GaN Bias 25 watt Gan on silicon transistor
Abstract: MwT-0618S-7G1/0618Z-7G 1 6.0-18.0 GHz BALANCED AM PLIFIER M ODULE MICROWAVE TECHNOLOGY 4268 SolarWay Fremont, CA 94538 510-651-6700 FAX510-651 -2208 TY P IC A L SP EC IFIC ATIO N S @ 25°C JUL , mA @ +8V USES TWO MwT-7 GaAs FET DEVICES 5 TYPICAL SMALL SIGNAL GAM (dB) 90 HU 7.0 TYPICAL 10 , \ 18 10 12 14 Frequency (GHz) ELEC TR IC AL SP EC IFIC ATIO N S (Ta=25°C ) SYMBOL FREQ SSG , Isolation Power Supply Voltage Small Signal Module Current Thermal Resistance Including FET* UNITS GHz -
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T-0618S-7G1/0618Z-7G MWAVS057

MPF102 spice model

Abstract: IB3135 _ 1.6.3 RF Microwave furnace application , 38 1.7.1 Microwave products for avionics, L- and S-band radar applications _ , 54 2.3.4 Low noise LO generators for microwave & mmWave radios , 61 2.5.4 Buidling on decades of innovation in microwave and radar , 82 3.4.2 Low noise LO generators for VSAT and general microwave applications
NXP Semiconductors
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MPF102 spice model IB3135 BLF278 mosfet HF amplifier toshiba smd marking code transistor BIT 3713 BLF4G08LS-160A TFF1008HN TFF1014HN TFF1015HN TFF1017HN TFF1018HN TFF11070HN

circuit diagram of GSM based home automation system

Abstract: BF1118 imaging, microwave furnaces and Mobile platforms. And we describe thoroughly new developments in our main , and cost structures with internal 8-inch IC fabs in the Netherlands and Singapore and assembly plants , Industry's first fully integrated, silicon-based IC solution for satellite: TFF1004HN 2008 ­ High speed , 12 1.2 Microwave & mmWave , _ 38 _ 1.6.8 F Microwave furnace application
NXP Semiconductors
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circuit diagram of GSM based home automation system BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram CMMB antenna Pallet VHF Power Amplifier 300w power amplifier circuit diagram TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN

TM 1628 IC

Abstract: MGF2148 MITSUBISHI {DISCRETE SC> M IT S U B IS H I SEM IC O N D U C T O R tí dF| bEHTaa^DDiaioi 4 I , _ 6249829 MITSUBISHI ( D I S C R E T E SC) 9 1D 10102 MGF2148 D FOR MICROWAVE , MITSUBISHI {DISCRETE S O TI D eTI DG1G1Q0 S 1 ~ M IT S U B IS H I SE M IC O N D U C T O R _ 6249829 MITSUBISHI ( D I S C R E T E SC) 91 D 10100 M G F214 8 DT'5?-ö7 FOR MICROWAVE POWER AMPLIFIERS DESCRIPTION The M G F 2 1 4 8 is designed for power
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TM 1628 IC 1D10101 IC TM 1628
Abstract: Fremont, CA 94538 510-651-G700 FAX510-651-2206 MICROWAVE TECHNOLOGY TYPICAL SPECIFICATIO N S @ 25 , Small Signal Module Current Thermal Resistance Including FET* UNITS GHz dB ±dB dB/# C dBm dBm dB/*C , 7.9 196.0 ao 60.0 &1 80.0 * When calculating Tch, use FET Vds = 5.0 volts and FET Ids = 30 mA. 10/92 -M17- ÂdÆ M ic r o W a v c À iff ic h n o l o o y T C O O O) TCM , alumina substrates and 10 mil copper FET ridge are brazed onto the 25 mil carrier using AuGe preform -
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MWAVS039

1658 NEC

Abstract: SW SPDT LDMOS FET µPG158TB GaAs SW IC, 6-pin Super Minimold µPG2008TK SPDT SW GaAs MMIC , RF AND MICROWAVE DEVICES SELECTION GUIDE - APPLICATION SYSTEM - April 2003 This document covers "Silicon Microwave Transistors", "Silicon Microwave Monolithic ICs" and "Microwave GaAs Devices , . 7 2. EXPLANATION OF THE RF AND MICROWAVE DEVICES , . 40 Selection Guide PX10020EJ08V0PF 5 1. INTRODUCTION The Microwave Devices are used
NEC
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NE52418 1658 NEC SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 PG2022TB PG2024TQ
Abstract: M w T -0 6 1 8 S -5 G 1 /0 6 1 8 Z -5 G 1 6.0-18.0 GHz BALANCED AM PLIFIER M ODULE MICROWAVE TECHNOLOGY 4 2 6 8 SolarWay Fremont, CA 94538 510-651-6700 FAX510-651 -2208 T Y P IC A L SP EC IFIC ATIO , 16.0 dBm P-1dB 5.5 dB NOISE FIGURE 100 mA@ +8V USES TWO MwT-5SG GaAs FET DEVICES TYPICAL 110 SMALL , Frequency (GHz) 16 18 ELEC TR IC AL SP EC IFIC ATIO N S (Ta=25°C ) SYMBOL FREQ SSG AGteF AGVAT P , Supply Voltage SmallSignatModule Current Thermal Resistance Including FET* UNITS GHz dB ±dB dB/'C dBm -
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MWAVS055
Abstract: most IC FET switches. A PIN diode operates as a variable resistor at RF and microwave frequencies. Its , incorporate both FET modes on an IC so that each device type within the circuit can use the process that best , The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave , today as several devices are typically contained in a block diagram. RF and microwave switches fall , switches have not found wide use in RF and microwave applications since the PIN diode was developed, they -
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MGF1801

Abstract: MGF1801B > MGF1801B MICROWAVE POWER GaAs FET T Y P IC A L C H A R A C T E R IS T IC S (ra^st) I d vs- V q s DR , MITSUBISHI SEMICONDUCTOR MGF1801B f i MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B , m ed iu m -p o w e r GaAs FET w ith an Nchannel S ch o ttky gate, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m , FÜT> MGF1801B MICROWAVE POWER GaAs FET S 11, S 22 vs. f + )50 S 2I, S i 2 + 90° VS. f
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MGF1801

MGF1802

Abstract: ^AEI 0010DÖS MITSUBISHI SEMICONDUCTOR MGF1802 6249829 MITSUBISHI ( D I S C R E T E SC)~ 91D 10085 D FOR MICROWAVE POW ER AMPLIFIERS T Y P IC A L C H A R A C T E R IS T IC S (Ta=2 5 'C) ^add v , MITSUBISHI {DISCRETE S O 11 DE |ta4TflS^ DOlQDflM ñ MITSUBISHI SEMICONDUCTOR _ 6249829 MITSUBISHI { D I S C R E T E SC) 91D MGF1802 10084 DT-31-25 FOR MICROWAVE POW ER , w *c C ·c/w E L E C T R IC A L C H A R A C T E R I S T I C S (T a = z5 -c ) Limits
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BB 509 varicap diode

Abstract: PIN diode ADS model products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave , aspect of your design challenge, so you can unleash the performance of your RF and microwave designs , the performance of your next-generation RF and microwave designs. 4 NXP Semiconductors RF , 42 1.8.1 Microwave products for L- and S-band radar and avionics applications , 62 3.4.5 Low-noise LO generators for VSAT and general microwave applications
NXP Semiconductors
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BB 509 varicap diode PIN diode ADS model ON503 bf1107 spice model diode varicap BB 112 BLF6G22L PMBFJ620 CGD1042H PRF947 CGD1042HI PRF949 CGD1042L
Abstract: ¡Œ ç»"åï¼Œå¶é' å‡ºç¬¦åè¦æ±'çš"å¼'å³ã''图 1 是ç"±ä¸²è"å'Œå¹¶è" FET â'¢ Solid State RF/Microwave Switch Technology: Part 2 Skyworks , æ§å¶ IC çš"æ­£å'ç"µå'æ"ä½ è´­ä¹°æ指定å°"é¢'å¼'å³è§"æ ¼çš"主要è'ƒè™'因素 RF/Microwave , Reï¬'ectiveï¼åå°"式) A = Absorptiveï¼å¸æ"¶å¼ï¼‰ï¼ç«¯æ¥ï¼‰ GaAs å°"é¢'å¼'å³åç è" FET çš"偏置产ç"非常ä½çš"ç"µé˜»ã''请å'é˜ Skyworks ç½' å¼'å³åºæ•åº"晶ä½"管 (FET) åå½"三端口器件时,源极å'Œæ¼æž ç , _ å½¢æå°"é¢'信号çš"é'šé",门极æ§å¶é'šé"çš"æ‰"å¼'å'Œå³æ­ã''要 Published_Articles.aspx),以è·å¾—更多æ‰å³ FET å¼'å³æ'"æ‰' å Skyworks Solutions
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BRO378-12A
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