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HM1-65642B-9 Intersil Corporation IC 8K X 8 STANDARD SRAM, 150 ns, CDIP28, Static RAM ri Buy
HM1-65642B-8 Intersil Corporation IC 8K X 8 STANDARD SRAM, 150 ns, CDIP28, Static RAM ri Buy
HM1-65162C/883 Intersil Corporation IC 2K X 8 STANDARD SRAM, 90 ns, CDIP24, CERAMIC, DIP-24, Static RAM ri Buy

micron memory sram

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Abstract: nanoseconds will be available in 2Q 1991. SRAM Technology Since 1983, MOSEL has developed and transferred to production 4 generations of CMOS SRAM technology (2.0, 1.5,1.2, and 1.0 micron geometries). Currently, 0.8 and 0.55 micron technologies are under development. During this time period, the size of the SRAM memory cell has been reduced from 815 square microns (at 2 micron) to 70 (at 1 micron) and to 19 (at 0.55 , density from 16K bit to 4 megabits. SRAM products are offered in JEDEC standard plastic DIP and/or plastic ... OCR Scan
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1 pages,
27.66 Kb

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Abstract: generations of CMOS SRAM technology at 2.0, 1.5, 1.2 and 1.0 micron geometries. Currently, 0.8 and 0.55 micron technologies are under development. During this time period, the size of the SRAM memory cell has been reduced , module products at 1 megabit and 4 megabits. SRAM products are offered in JEDEC standard plastic dip and , has recently begun sampling the MS621000 MS621000 monolithic 1 megabit 128K x 8 SRAM, with speeds of 80 to , devices (20 to 25ns) and the 4 megabit 512K x 8 SRAM. MODULE PRODUCTS In module form, MOSEL, offers the ... OCR Scan
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1 pages,
52.15 Kb

MS62256L MS62256AL MS62256BL MS6264L MS6264AL MS6264CL MS6516 MS621000 MS88128 MS6M8512 MS62256L abstract
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Abstract: Micron SRAM family employs high-speed, lowpower CMOS designs using a four-transistor memory cell. Micron , high-speed memory applications, Micron offers chip enable (CE) capability. This enhance ment can place the , ADVANCE N E W FAST SRAM MT5C4008 MT5C4008 SRAM FEATURES · High speed: 20,25, 35 and 55ns · High-performance, low-power, CMOS double-metal process · Single +5V ±10% power supply · Easy memory expansion with , 512Kx 8 SRAM WITH OUTPUT ENABLE PIN ASSIGNMENT (Top View) 32-Pin SOJ (E-11) OPTIONS · Timing ... OCR Scan
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1 pages,
65.02 Kb

micron sram MT5C4008 MT5C4008 abstract
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Abstract: ADVANCE MICRON MT56C0416 MT56C0416 CACHE DATA STATIC RAMS DUAL 4Kx 16/18 SRAM, SINGLE 8Kx 16/18 , SRAM cache memories. It employs a high speed, low power design using a 4-transistor memory cell. It is , configuration of the memory. When this pin is held low, the device functions as an 8K by 16 or 18 bit SRAM. When , times of 25 nanoseconds, Micron has firmly established itself as the leading fast SRAM supplier. So, for your fastest memory requirements, come to the fast memory supplier. . Micron. 5-3 This Material ... OCR Scan
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1 pages,
52.01 Kb

intel 82385 static ram 8K intel 1.2 Micron CMOS Process Family MT56C0416 A12 marking 74LS373 micron memory sram cache micron memory sram 82385 MT56C0416 abstract
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Abstract: development. During this time period, the size of the SRAM memory cell has been reduced from 815 square microns , products at 1 megabit and 4 megabits are available. SRAM products are offered in JEDEC standard plastic dip , the MS6M8512 MS6M8512 512K x 8 SRAM module. These JEDEC pin out devices provide a prototype and pilot production vehicle for designers who want to use future generation density products today. SRAM TECHNOLOGY Since 1983, MOSEL has developed and transferred to production 4 generations of CMOS SRAM technology at ... OCR Scan
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1 pages,
36.73 Kb

MS62256L MS62256CL MS6264L MS6264CL MS6265 MS6516 MS88128 MS6M8512 MS62256L abstract
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Abstract: The Micron SRAM family employs high-speed, lowpower CMOS designs using a four-transistor memory cell. , flexibility in high-speed memory applications, Micron offers chip enable (CE) capability. This enhance ment , ADVANCE M IC R O N I N E W FAST SRAM TEC'íSOLOCV irjc MT5C4005 MT5C4005 SRAM FEATURES · , ±10% power supply · Easy memory expansion with CE and OE options · All inputs and outputs are TTL compatible · Fast Output Enable access time: 8ns 1 MEG X 4 SRAM WITH OUTPUT ENABLE PIN ASSIGNMENT (Top ... OCR Scan
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1 pages,
68.4 Kb

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Abstract: : MT5C512K8A1DJ-25 MT5C512K8A1DJ-25 L IT The Micron SRAM family employs high-speed, lowpower CMOS designs using a four-transistor memory cell. Micron SRAMs are fabricated using double-layer metal, triple-layer polysilicon technology. For flexibility in high-speed memory applications, Micron offers chip enable (CE) capability. This , ADVANCE I^ IIC R O N MT5C512K8A1 MT5C512K8A1 512K X 8 SRAM N E W 5 VO LT SRAM SRAM FEATURES · , ±10% power supply · Easy memory expansion with CE and OE options · All inputs and outputs are TTL ... OCR Scan
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2 pages,
43.34 Kb

MT5C512K8A1 MT5C512K8A1 abstract
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Abstract: DESCRIPTION The Micron SRAM family employs high-speed, lowpower CMOS designs using a four-transistor memory , flexibility in high-speed memory applications, Micron offers chip enable (CE) capability. This enhance ment , ADVANCE |V |IC = R O N MT5LC1M4C3 1 MEG X 4 SRAM N E W 3 .3 VO LT SRAM SRAM FEATURES , +3.3V ±0.3V power supply · Easy memory expansion with CE and OE options · All inputs and outputs are TTL compatible · Fast OE access time: 8ns 1 MEG X 4 SRAM WITH OUTPUT ENABLE PIN ASSIGNMENT (Top View) 32-Pin ... OCR Scan
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2 pages,
43.48 Kb

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Abstract: DQ3 C 15 Vss C 16 MT5LC512K8C3DJ-25 MT5LC512K8C3DJ-25 L IT GENERAL DESCRIPTION The Micron SRAM family employs high-speed, lowpower CMOS designs using a four-transistor memory cell. Micron SRAMs are fabricated using , ADVANCE I^IC Z R O N MT5LC512K8C3 MT5LC512K8C3 512K X 8 SRAM N E W 3 .3 VO LT SRAM SRAM FEATURES , +3.3V ±0.3Vpower supply · Easy memory expansion with CE and OE options · All inputs and outputs are TTL compatible · Fast OE access time: 8ns 512Kx 8 SRAM WITH OUTPUT ENABLE PIN ASSIGNMENT (Top View) 32-Pin ... OCR Scan
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2 pages,
43.48 Kb

MT5LC512K8C3 MT5LC512K8C3 abstract
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Abstract: GENERAL DESCRIPTION The Micron SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Micron SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Micron offers chip enable (CE) capability. , ADVANCE MT5C4008 MT5C4008 m SRAM 512Kx 8 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 20,25, 35 and , memory expansion with CE and OE options • All inputs and outputs are TTL compatible • Fast Output ... OCR Scan
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1 pages,
36.94 Kb

micron memory sram MT5C4008 micron sram datasheet abstract
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Datasheet Content (non pdf)

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Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
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www.datasheetarchive.com/download/48664731-299145ZC/bae65022linux.tgz
Kaleidoscope 22/08/2005 11421.08 Kb TGZ bae65022linux.tgz
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www.datasheetarchive.com/download/48664731-299145ZC/bae65022linux.tgz
Kaleidoscope 22/08/2005 11421.08 Kb TGZ bae65022linux.tgz
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Kaleidoscope 22/08/2005 11421.08 Kb TGZ bae65022linux.tgz
QDR SRAM memory controller in the low cost Spartan-II FPGA. Click here to register for immediate access to the 'FREE' VHDL source code for the QDR SRAM memory controller. > Xilinx at Work - QDR SRAM Controller existing memory solutions, and provide a high-performance architecture that can be used to provide data throughputs of 11.592 Gbits/s, this is four times the performance of current SRAM solutions. The QDR SRAM
www.datasheetarchive.com/files/xilinx/docs/rp00000/rp0003d.htm
Xilinx 06/03/2000 6.41 Kb HTM rp0003d.htm
IDT and Micron Introduce New Smart ZBT SRAM Technology Needs Cypress, IDT and Micron Team to Provide New QDR SRAM Architecture IDT Announces Industry's Fastest 4-Mbit Synchronous ZBT SRAM IDT Announces Space-Saving Memory Packaging Solution.
www.datasheetarchive.com/files/idt/docs/wcd00000/wcd00061.htm
IDT 13/01/2000 21.97 Kb HTM wcd00061.htm
SOLUTION LAUNCHES COMPANY'S FIRST 0.35 MICRON STATIC RAM DEVICE 10 ns, 1 M-bit CMOS SRAM achieving maximum speed performance. "The production transfer of the 0.35 micron SRAM process lets PARTNERING STRATEGY ISSI's newest SRAM memory process is a result of the company's long-term partnership demanded by the SRAM marketplace." The 0.35 micron process, now in production at TSMC-Taiwan, will version, now in development, and then by a 0.18 micron SRAM process. WaferTech's advanced process
www.datasheetarchive.com/files/issi/docs/press/newsr4.html
ISSI 28/02/2000 6.41 Kb HTML newsr4.html
SRAM, 1M bit of Dual-port SRAM, 32M bit or ROM as well as a wide variety of system building blocks and up to 256K bits of E2 memory. Atmel's current ASIC product families are: ATL25 ATL25 ATL25 ATL25 ­ 0.25 micron ATL35 ATL35 ATL35 ATL35 ­ 0.35 micron ATL50/E2 ATL50/E2 ATL50/E2 ATL50/E2 ­ E 2 ASIC; 0.5 micron ATL60 ATL60 ATL60 ATL60 ­ 0.6 micron All of Atmel's gate arrays Field Programmable Gate Array Flash Memory/DataFlash FPGA Configuration Memory FPSLIC volume applications, which incorporate logic, memory and megacells system building blocks. Gate Arrays
www.datasheetarchive.com/files/atmel/atmel/prod4-v3.htm
Atmel 30/01/2000 20.16 Kb HTM prod4-v3.htm
July 26, 1999 Company Press Release Cypress, IDT and Micron Team to Provide New QDR SRAM Architecture New SRAM Architecture Targets (408) 369-1500 Micron Echo Sarlya (208 , Inc. (Nasdaq: IDTI) and Micron Technology Inc. (NYSE: MU) today announced that they have jointly defined and developed a new SRAM architecture for future high-performance
www.datasheetarchive.com/files/idt/docs/wcd00000/wcd000eb.htm
IDT 24/01/2000 24.2 Kb HTM wcd000eb.htm
Production of New Low Power SRAM Device Highlights ISSI's 0.25-Micron Process Expertise SANTA SRAM 0.25-micron process technology arena. "The IS62LV12816L IS62LV12816L IS62LV12816L IS62LV12816L, with its leading 0.25-micron process expertise in memory design, process technology and test. Cushman noted that the new SRAM can also be 0.18-micron SRAM process, within the next year." IS62LV12816L IS62LV12816L IS62LV12816L IS62LV12816L Applications and Features ISSI memory solution company, designs, develops and markets high-performance Flash, Serial Flash, SRAM
www.datasheetarchive.com/files/issi/docs/press/qtrsram.html
ISSI 28/02/2000 7.45 Kb HTML qtrsram.html
, IDT and Micron Team to Provide New QDR SRAM Architecture New SRAM Architecture Targets High-Bandwidth Applications Operating at Data Rates Above to greatly increase memory bandwidth compared to existing SRAM solutions in Device TechnologyIDT, Inc. (Nasdaq: IDTI) and Micron Technology Inc. (NYSE: MU) today announced that they have jointly defined and developed a new SRAM architecture
www.datasheetarchive.com/files/idt/docs/rp00003/rp0038f.htm
IDT 27/06/2001 45.14 Kb HTM rp0038f.htm