NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Pressure Sensor Using QMEMS Technology Epson Toyocom Corporation, the leader in crystal devices, has developed an extremely small, high-performance quartz crystal atmospheric pressure sensor that employs an original pressure-sensing structure using QMEMS (*1) technology. The new sensor has a cubic volume of only , crystal pressure sensor, however, provides both high accuracy and high resolution in a diminutive package , possible by QMEMS technology. The performance and features of the new pressure sensor will greatly aid ... | Original |
2 pages, |
pressure sensor of quartz mems pressure sensor structure RS-232C RS-232C abstract |
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| Abstract: cavities - Cost effective wafer level packaging by wafer bonding Top view, open sensor structure , capacities - Low inside cavity pressure . because the world is analog. MEMS Process Surface , Minimum beam width 2 um Total thickness wafer stack (sensor with top cap) Inside cavity pressure , MEMS Process Surface Micromachining Process for Inertial Sensors MIXED-SIGNAL FOUNDRY EXPERTS XM-SC Process Schematic cross section TC pad Metal line Top cap (TC) Sensor pad Glass ... | Original |
2 pages, |
MEMS pressure silicon MEMS pressure sensor mems gyro wafer sensors sem 2005 MEMS gyro sensor seismic sensor mems pressure sensor structure datasheet abstract |
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| Abstract: FOR IMMEDIATE RELEASE OMRON Releases New Cyclone-type MEMS Flow Sensor Highly Dust Resistant , Electronic Components LLC has announced the release of a new MEMS flow sensor. Incorporating a unique , can detect very low flow rates. Omron's new MEMS flow sensor is designed to meet this need for an , differential pressure sensing. ·Overview of New Product By using the world's smallest class of MEMS flow , the exhaust vent and only clean air passes through to sensor element. · MEMS Chip · ... | Original |
3 pages, |
Sensors dust D6F-P0010A1 D6F-P0010A2 difference MEMS and IC dust sensor level and Flow Sensor mems Flow Sensor intake sensor medical flow sensor omron pressure sensor Airflow Sensor Breathing "Flow Sensor", medical "Air Flow Sensor", medical datasheet abstract |
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| Abstract: MEMS Gauge Pressure Sensor 2SMPP MEMS Gauge Pressure Sensor Featuring Small Size and Low Power , Package Material PPS (Polyphenylenesulfide) 36 2SMPP MEMS Gauge Pressure Sensor , Example of application circuit for MEMS Pressure Sensor VDD Constant current circuit unit Amplifier , the pressure sensor by using the amplifying circuit if necessary. 38 MEMS Gauge Pressure Sensor , products under humid or dusty condition. 40 MEMS Gauge Pressure Sensor 2SMPP Soldering · Due ... | Original |
8 pages, |
ultrasonic piezo 2SMPP02 gauge pressure sensor medical sensor mems pressure sensor structure ultrasonic movement sensor resistive humidity sensor negative PRESSURE SENSOR MEMS humidity sensor Pressure sensor air pressure sensor tube temperature gauge sensor datasheet abstract |
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| Abstract: MEMS Gauge Pressure Sensor 2SMPP MEMS Gauge Pressure Sensor Featuring Small Size and Low Power , controller GND MEMS Gauge Pressure Sensor 2SMPP 35 Specifications Ratings Item Pressure , body model) 0.17 g PPS (Polyphenylenesulfide) 36 MEMS Gauge Pressure Sensor 2SMPP , use. MEMS Gauge Pressure Sensor 2SMPP 37 Pressure cycle range (0 to 40 kPa) 1 1 Offset , of application circuit for MEMS Pressure Sensor VDD Constant current circuit unit Amplifier circuit ... | Original |
8 pages, |
temperature gauge sensor "piezo element" level sensor datasheet abstract |
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| Abstract: pressure sensors. SUMMiTTM Technologies For example, the auto pressure sensor and disposable blood pressure www.mems.sandia.gov sensor became a commercial reality in the 1980's. Today, the use of MEMS as , effectively encapsulates the MEMS structure. This method leaves the device free to move within a vacuum or an , solution microelectromechanical systems technology MEMS Technology Microelectromechanical systems (MEMS) are micron-size devices that can sense or manipulate the physical world. MEMS are created ... | Original |
4 pages, |
Amkor Technology capacitor mems gas sensor digital mems microphone ISO-9002 medical mems 103F amkor microphone MEMS optical tunable filters TS-16949 rf mems switch MEMS pressure silicon MEMS Filter mems pressure sensor structure datasheet abstract |
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| Abstract: output characteristics. In addition the sensor utilizes a silicon, micromachined (MEMS) structure to , series pressure sensors are based upon a proprietary technology to reduce the size of the sensor and yet , Pressure Sensor Characteristics Maximum Ratings Environmental Specifications 16 Vdc Supply Supply , miniature pressure sensors Baromtric Pressure Sensors Prime Grade Features all sensors ·600 to 1,100 mbar Pressure Range · 0.10 % linearity.highest accuracy version · Temperature ... | Original |
2 pages, |
Silicon temperature sensors PRIME 500 series datasheets marking AF fs sensors Miniature silicon pressure sensors mems pressure sensor structure mems pressure sensor datasheet abstract |
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| Abstract: Acceleration Sensor SRA-SCA3000 SRA-SCA3000 Series [O v e r v i e w] Murata Manufacturing Co., Ltd. (hereinafter "Murata") start to promote MEMS 3-axis acceleration sensor of VTI Technologies Oy (hereinafter "VTI") on a worldwide at the beginning of Oct. 2007. Murata will start marketing VTI's MEMS 3-axis acceleration sensor , structure. Since the sensitivity of each axis is equal, this product is ideal for the market requiring high , controllers have expanded greatly. Murata will expand the sensor product line-up by adding VTI Technologies ... | Original |
3 pages, |
MEMS pressure sensor capacitive sensor technologies "Acceleration Sensor" hdd shock sensor Murata 6MHz SRA-SCA3000 SRA-SCA3000 abstract |
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| Abstract: Thermoplastic Thermoplastic D6F-05N2-000 D6F-05N2-000 PASSIVE & ACTIVE Connecting 3-wire cable for MEMS flow sensor , 1-24 10.75 9.70 13.16 25-49 9.95 9.36 12.50 50-99 9.43 9.03 11.90 D7E-1 Gauge Pressure Sensor , Plastic Sleeve Applicable Gas Air Pressure Range 0 to 37 kPa Pressure Reference Gauge Sensor Type Piezo , Accuracy Flow Sensing Proprietary MEMS Technology Precise Monitoring of the Presence and Circulation of , D6F-W01A1 D6F-W01A1 Connecting 3-wire cable for D6F clog sensor Air Velocity Sensor - D6F-V RoHS Unique Dust ... | Original |
1 pages, |
PROPANE sensor medical flow sensor 2smpp gas sensor o2 "Air Flow Sensor", medical flow sensor "piezo" datasheet abstract |
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| Abstract: MEMS Mass Flow Sensor D6F-P A Compact, High-performance Flow Sensor with Dust Segregation , differential pressure sensing. · RoHS Compliant Ordering Information Description Flow Sensor Cable , not contain large particles, dust, oil, mist) MEMS Mass Flow Sensor D6F-P 7 Absolute , 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 0.0 0.3 0.5 Flow Rate(lpm) 8 MEMS Mass Flow Sensor , wire (5) 180±10 3. Vcc MEMS Mass Flow Sensor D6F-P 9 Packaging TYPE D6F-P 3 ... | Original |
6 pages, |
XG8V-0344 particulate matter sensor D6F-P0010A2 D6F-P0001A mems pressure sensor structure 03SR-3S d6F-P0010A1 "Flow Sensor" datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| technologies for sensors, actuators and microelectromechanical structures (MEMS). World-class bulk Senseon TM - Sense the Possibilities Motorola's SENSEON acceleration, chemical, and pressure sensor , check in to see the latest update. Chemical Sensor Glossary Pressure Sensors Low cost, flexible, and versatile pressure sensor solutions for virtually every pressure sensor application. FAQs Design Tools Pressure Sensor Micromodel Library Motorola Distributor and Worldwide Sales Offices www.datasheetarchive.com/files/motorola/design-n/senseon/senseon.htm |
Motorola | 25/11/1996 | 6.01 Kb | HTM | senseon.htm |
| multilayered SOI wafers. These structures are fabricated using fusion bonding with interfacial oxide layers. The structure allows single-crystal silicon to be used to make microsystems and optical devices in the fields of 3D MEMS and optical MEMS (MOEMS). A variety of products such as accelerometers, pressure sensors, optical switches, mirrors and wave guides can be made using this structure. There are a number of advantages to this structure. It offers low stress, minimal voids, and flexibility in the wafer www.datasheetarchive.com/files/analog-devices/doc/productdescriptions/14776.html |
Analog Devices | 1.17 Kb | HTML | 14776.html | |
| multilayered SOI wafers. These structures are fabricated using fusion bonding with interfacial oxide layers. The structure allows single-crystal silicon to be used to make microsystems and optical devices in the fields of 3D MEMS and optical MEMS (MOEMS). A variety of products such as accelerometers, pressure sensors, optical switches, mirrors and wave guides can be made using this structure. There are a number of advantages to this structure. It offers low stress, minimal voids, and flexibility in the wafer parameter and www.datasheetarchive.com/files/analog-devices/doc/productdescriptions/14778.html |
Analog Devices | 1.16 Kb | HTML | 14778.html | |
| multilayered SOI wafers. These structures are fabricated using fusion bonding with interfacial oxide layers. The structure allows single-crystal silicon to be used to make microsystems and optical devices in the fields of 3D MEMS and optical MEMS (MOEMS). A variety of products such as accelerometers, pressure sensors, optical switches, mirrors and wave guides can be made using this structure. There are a number of advantages to this structure. It offers low stress, minimal voids, and flexibility in the wafer parameter and www.datasheetarchive.com/files/analog-devices/doc/productdescriptions/14777.html |
Analog Devices | 1.16 Kb | HTML | 14777.html | |
| describe multilayered SOI wafers. These structures are fabricated using fusion bonding with interfacial oxide layers. The structure allows single-crystal silicon to be used to make microsystems and optical devices in the fields of 3D MEMS and optical MEMS (MOEMS). A variety of products such as accelerometers, pressure sensors, optical switches, mirrors and wave guides can be made using this structure. There are a number of advantages to this structure. It offers low stress, minimal voids, and flexibility in the wafer www.datasheetarchive.com/files/analog-devices/gendesc/2512.htm |
Analog Devices | 05/06/2003 | 1.2 Kb | HTM | 2512.htm |
| describe multilayered SOI wafers. These structures are fabricated using fusion bonding with interfacial oxide layers. The structure allows single-crystal silicon to be used to make microsystems and optical devices in the fields of 3D MEMS and optical MEMS (MOEMS). A variety of products such as accelerometers, pressure sensors, optical switches, mirrors and wave guides can be made using this structure. There are design of the MEMS or MOEMS structure to best advantage. In certain cases it can also reduce the overall www.datasheetarchive.com/files/analog-devices/gendesc/2510.htm |
Analog Devices | 05/06/2003 | 1.2 Kb | HTM | 2510.htm |
| describe multilayered SOI wafers. These structures are fabricated using fusion bonding with interfacial oxide layers. The structure allows single-crystal silicon to be used to make microsystems and optical devices in the fields of 3D MEMS and optical MEMS (MOEMS). A variety of products such as accelerometers, pressure sensors, optical switches, mirrors and wave guides can be made using this structure. There are a number of advantages to this structure. It offers low stress, minimal voids, and flexibility in the wafer www.datasheetarchive.com/files/analog-devices/gendesc/2511.htm |
Analog Devices | 05/06/2003 | 1.2 Kb | HTM | 2511.htm |
| 6670 is a capacitive rotational accelerometer sensor produced using Micro-Electro-Mechanical System (MEMS) technology; vibrations of the disk drive cause tiny rotational displacements of the moving part of the MEMS structure, which are measured by sensing the small , and IEEE 1394. At the same time, there will be no let-up on the pressure to keep increasing www.datasheetarchive.com/files/stmicroelectronics/stonline/press/magazine/challeng/3rdedi00/chal03.htm |
STMicroelectronics | 20/11/2000 | 10.18 Kb | HTM | chal03.htm |
| Instrumentation Cell Phone Voice Recognition Comfort Power Seat Power Mirrors Sunroof Climate Sensors Security Alarm Keyless Entry Non Safety Sensors Engine Control Cruise Control Brakes ABS/TCS Brake-by-Wire Safety -to-market pressures as automotive is shrinking from 6 to 2 years Traditional solution challenges Microcontroller Wheel Sensors Gyroscope GPS Controller Unit Control Network Multimedia Network In-Car GPS Receiver CPU Interface RF Tuner Front Panel ADC ADC ADC User Interface Filtering and Formatting RF In Wheel Sensors www.datasheetarchive.com/download/58453268-996052ZC/embedded world 2003.ppt |
Xilinx | 26/02/2003 | 4639.5 Kb | PPT | embedded world 2003.ppt |
| Voice Recognition Comfort Power Seat Power Mirrors Sunroof Climate Sensors Security Alarm Keyless Entry Non Safety Sensors Engine Control Cruise Control Brakes ABS/TCS Brake-by-Wire Safety Airbags Collision Display, computing, audio, RF, etc. Requires flexible solution Time-to-market pressures as automotive is Networks CAN VAN LIN IDB Proprietary MOST IEEE1394 IEEE1394 IEEE1394 IEEE1394 USB PCI Proprietary GPS Antenna Wheel Sensors Gyroscope Panel ADC ADC ADC User Interface Filtering and Formatting RF In Wheel Sensors Gyros Microphones www.datasheetarchive.com/download/27007461-996051ZC/electronica presentation nov 200.ppt |
Xilinx | 26/02/2003 | 4255 Kb | PPT | electronica presentation nov 200.ppt |