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maximum drain voltage of FET 3N143

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Abstract: gate leakage. The 3N143 is designed for use as a VHF mixer and oscillator. Because of their improved , . Maximum Ratings, Absolute-Maximum Values: DRAIN-TO-SOURCE VOLTAGE, VDS , GATE-TO-SOURCE VOLTS (VGSI Fig.4 • Forward Transconductonce vi Gate-Bias Voltage. Fig.5 • Drain Currant vt , Draln-to-Source Voltage. 4 6 a » DRAIN MILLIAMPERES (Ip) HCI-MStt Fig.7 • 1-kHi Forward Transconductanee vs , (Substrate) and Case OPERATING C The flexible leads of the 3N128 3N128 and 3N143 are usually soldered to the ... OCR Scan
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5 pages,
267.68 Kb

ta7275 3N72 GPS A05 rca an 3193 "rca application note" RCA Solid State Power Transistor rca transistor AN-3193 RCA Solid State amplifier JV3I transistor 3N128 equivalent RCA-3N128 3N143 3N128 3N143 air variable capacitor 3N128 3N143 3n128 3N128 3N143 maximum drain voltage of FET 3N143 3N128 3N143 FET 3N143 3N128 3N143 3N128 3N128 3N143 TEXT
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Abstract: gate leakage. The 3N143 is designed for use as a VHF mixer and oscillator. Because of their improved , . Maximum Ratings, Absolute-Maximum Values: DRAIN-TO-SOURCE VOLTAGE, VDS , Voltage. Fig.5 • Drain Current vj Gate-to-Source Voltage. 4 6 e » DRAIN MILLIAMPERES (Ip) HCI-MStt , > 20 »ICS-I40SI ICS-I40SI Fig.i - Drain Current vi Draln-to-Source Voltage. 1040. 3243 A , of the 3N128 3N128 and 3N143 are usually soldered to the circuit elements. As in the case of any ... OCR Scan
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5 pages,
410.69 Kb

TA7275 3N143 electrometer fet electrometer TO-72 m892 RCA Solid State Power Transistor rCA TO-72 3N RCA Solid State power devices rca an 3193 "rca application note" RCA Solid State amplifier TA2840 rca an3193 3N128 3N143 AN-3193 3N128 3N143 RCA-3N128 3N128 3N143 FET 3N143 3N128 3N143 3N128 3N128 3N143 3N128 equivalent maximum drain voltage of FET 3N143 TEXT
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Abstract: engineer with the maximum amount of accurate product data organized in such a manner that the pertinent , the initiation of breakdown for an increasing magnitude of reverse current. breakdown voltage , The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode , , Hennessy Rd . Hong Kong. 05-279041 : P.O. Box 2093.990 Bendemeer Rd., Singapore 1, Republic of Singapore , . Mexico City 15. O.F., Mexico, 905-567-9200. NETHERLANDS. Texas Instruments Holland BV: Laan Van He ... OCR Scan
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1243 pages,
34016.9 Kb

2n3819 replacement motorola HEP cross reference 1N2222A transistor LM 4440 AUDIO AMPLIFIER CIRCUIT TIS43 Unijunction Transistor TIS43 Diode Equivalent 1N34A 2N3035 and applications diode d.a.t.a. book Til 322A transistor cs 9012 KIA 4318 free transistor equivalent book 2sc LG color tv Circuit Diagram schematics TEXT
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Abstract: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and , oniente 116 # 4 8 9 . Col. In d u stria l V allejo, M exico C ity 15. O.F., M exico. 90 5-5 67 -9 20 0 , first silicon transistor to the marketplace, and later w ith the invention of the integrated circuit, T , Texas Instruments to provide the design engineer w ith the maximum amount o f accurate product data , -404); optoelectronic products are presented in First Edition (CC-405 CC-405). For ease of reference, all current devices ... OCR Scan
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1243 pages,
34009.71 Kb

btw 70.200 transistor Vo 80500 TRANSISTOR tis25 ic str 6454 equivalent Diode Equivalent 1N34A 2n5952 equivalent TFK 680 CNY 70 rca 40361 transistor tfk 102 cny 70 IC HXJ 2038 TEXT
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Abstract: Circuits Table of Contents Page Index to Linear 1C and MOS/FET Devices , . gnd.) - V typ. 18 R|_ = 10 k f i 35 Maximum Supply Voltage v+ , v - o R L= 2 k f it , Stacks” . The metal shells of some solid state devices operate at the collector voltage and for some , throughout the year by a comprehensive data service system that keeps you aware of all new device , in requesting information on new devices of interest to you. If you wish to receive all new product ... OCR Scan
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pages,
0 Kb

Thyristor chn 542 40468A 40664 SCR CA3035 equivalents cd 40938 CD2500E 3N128 equivalent K493 diode optoelectronic databook rca 40432 diac High-Power 202A MOSFET DIODE chn 548 CA3458T ta7657 chn 834 TRANSISTOR TEXT
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Abstract: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and , oniente 116 # 4 8 9 . Col. In d u stria l V allejo, M exico C ity 15. O.F., M exico. 90 5-5 67 -9 20 0 , first silicon transistor to the marketplace, and later w ith the invention of the integrated circuit, T , Texas Instruments to provide the design engineer w ith the maximum amount o f accurate product data , -404); optoelectronic products are presented in First Edition (CC-405 CC-405). For ease of reference, all current devices ... OCR Scan
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1243 pages,
34016.9 Kb

2n243 2N1152 1n48 zener diode motorola HEP cross reference 2N4061 equivalent IC HXJ 2038 1N6227 TEXT
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Abstract: variant of the basic package type. MOS/FET's only 6 2. RCA Linear integrated circuits are , broadband output noise voltage clock input frequency maximum operating frequency charge-pump input-pulse , supply voltage (V p D) zero-gate (bias) drain current (dual-gate types) zero-gate (bias) drain , V,GS v GSITHI VGS(Of fl G1S V G ls IOf fl base-to-emitter saturation voltage , voltage drain supply voltage used as a second positive supply voltage. It S ^ V qq s and referenced ... OCR Scan
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0 Kb

40468A CA3401 CA301AG ca555ce CA1458E rca CA741CG HA1-2111-2 MLM307G A3126 SFC2748DC CA3162 equivalent IC ca3401e CA555CG rca ca3240E CA311G CA1310 sn76013 TEXT
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Abstract: ) = Maximum Zener Breakdown Voltage (used only when a corresponding Vz (min) is specified , specified Nominal Breakdown Voltage Tol P d = Maximum Power Dissipation. M = m illiwatts. watts , DIODES PRV Peak Reverse Voltage V f @ I f = Maximum Forward S = Silicon G = Germanium SE = Selenium Voltage at Indicated Forward Current — M =: milliamps, A = amps Type number of , Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION ... OCR Scan
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0 Kb

MSS1000 diode 2N1191 2N140 2n3052 2n328 2N3866 MOTOROLA 2n3986 equivalent transistor 2N5160 MOTOROLA C943 transistor MC1230F MC1303 mss1000 1N77B TEXT
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Abstract: 85 9 Copyright © Semicon Indexes 1997: no part of this book may be reproduced in any form, by , form of information storage and retrieval system; without the express written permission of the compilers and publishers. All material herein is presented as a careful summary of data on semiconductors, but with no warranty of its accuracy or of its completeness. Data may change without notice. Th is data is intended only for, and limited to, the guidance of the user. No representation whatsoever about ... OCR Scan
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LT5202 diode elektronische bauelemente rft Silec Semiconductors semefab 051 General Instrument data book 1RFP140 mje1500 g20n50 e420 dual jfet jfet e304 G20N40 BD559 NEC Tokin oe 907 smd diode marking WU1 Ericsson RBS 6102 MZ 13001 TRANSISTOR IGBT M16 100-44 Transistor B0243C 7119 amperex w3819b field effect transistor TEXT
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Abstract: Continuous Wave Diode Drain of FET Decibel Direct Current Direction Finding Dual In Line German , ) Maximum power dissipation of the device - given in mW unless otherwise stated. Hfe (min) Minimum current , shown be­ low. * ', b (max) Maximum permissible collector-base voltage with the emitter open-circuit. V qe (max) Maximum permissible collector-emitter voltage with the base open-circuit. V eb (max) Maximum permissible emitter-base voltage with the collector open-circuit. Pt o t hrc (min) @ lc ... OCR Scan
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OC72 siemens transistor manual AY-3-8912 2sc2078 equivalent 74LS50 n2060 MC3340 equivalent 2N3866 s2p P31c transistor TNY 176 PN EQUIVALENT BC237B National 2N109 6502 microprocessor bc149c SN76477 Semiconductor Data Handbook mj802 TEXT
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