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Part Manufacturer Description Datasheet BUY
MSP430-3P-INFIN-ADP-101-THINERGY Texas Instruments ADP-101 visit Texas Instruments
ISL59441IAZ-T13 Intersil Corporation 900MHz Multiplexing Amplifiers; QSOP16; Temp Range: -40° to 85°C visit Intersil Buy
ISL59441IAZ-T7 Intersil Corporation 900MHz Multiplexing Amplifiers; QSOP16; Temp Range: -40° to 85°C visit Intersil Buy
ISL59441IAZ Intersil Corporation 900MHz Multiplexing Amplifiers; QSOP16; Temp Range: -40° to 85°C visit Intersil Buy
OPA4658UB Texas Instruments QUAD OP-AMP, 8000uV OFFSET-MAX, 900MHz BAND WIDTH, PDSO14 visit Texas Instruments
OPA4650UB Texas Instruments QUAD OP-AMP, 1000uV OFFSET-MAX, 900MHz BAND WIDTH, PDSO14 visit Texas Instruments

marking 101 900MHz

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ±0.20 4.70 ±0.20 3.2768 ~ 90.0MHz 3.579 ~ 90.0MHz   Frequency range: 11.40  , © (>25.0 ~ 90.0MHz, 3rd OT) ï'  ï'  ï'  ï'  ï'  ï'  ï'     ï , check with us before ordering. Tel: +44 1460 256 100 07 Nov 2013 Fax: +44 1460 256 101 E-mail , supplied on tape (no reel), or in bulk. Soldering Profile 260°C ±5°C 10s max °C Marking FREQUENCY DC 260 Marking type:â'Laser DCâ'= Date code 200 5°C/s max Tape &â'Reel Golledge Electronics
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Abstract: ~ 90.0MHz 3.579 ~ 90.0MHz  Calibration tolerance: ï'  ï'  ï'  ï'    ï , © (>10.0 ~ 50.0MHz, fund) 100Ω (>25.0 ~ 90.0MHz, 3rd OT) ï'  ï'  ï'  ï'  ï'  ï , . Tel: +44 1460 256 100 12 May 2014 Fax: +44 1460 256 101 E-mail: sales@golledge.com Web , reel), or in bulk. Soldering Profile 260°C ±5°C 10s max °C Marking FREQUENCY DC 260 Marking type:â'Laser DCâ'= Date code 200 5°C/s max Tape &â'Reel Specification 4.00 1.50à Golledge Electronics
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D 1652 transistor

Abstract: MITSUBISHI RF POWER MOS FET PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers , power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile , .Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate
Mitsubishi
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D 1652 transistor MITSUBISHI RF POWER MOS FET 0945 transistor 8814 mosfet TRANSISTOR D 1786 transistor 0882 900MH RD20HMF1-101

100OHM

Abstract: RD45HMF1 PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 10.0 , "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS
Mitsubishi
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100OHM MOSFET "CURRENT source" 800-900MH RD45HMF1-101

ALM-80110

Abstract: irl 1520 technologies systems. Pin connections and Package Marking · Wide Gain Control Range · High OIP3 across , . Note : Top View : Package marking provides orienation and identification "80110" = Device Code , the upper and lower specification limits. ALM-80110 Product Consistency Distribution at 900MHz , =2.3 .13 Figure 2. Itotal at 900MHz 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 Figure 3. NF at 900MHz LSL LSL USL CPK=3 12 13 CPK=2.2 14 15 Figure 4. Gain at
Avago Technologies
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A004R ALM80110 irl 1520 RO4350 400MH ALM-80110-BLKG ALM-80110-TR1G AV02-1970EN

BFR520

Abstract: 900MHZ °C 1.Ts is the temperature at the soldering point of the collector tab. Device Marking BFR520 , =900MHZ ) ( IC=20mA , VCE = 6V , Ta =25°C , f =2GHZ ) GUM - 15 9 - dB dB Insertion power gain ( IC=20mA , VCE = 6V , Ta = 25°C , f = 900MHz ) | S21 |² 13 14 - dB Noise figure ( s = opt , IC = 5mA , VCE = 6V , Ta = 25°C , f = 900MHz) ( s = opt , IC = 20mA , VCE = 6V , Ta = 25°C , f = 900MHz) ( s = opt , IC = 5mA , VCE = 6V , Ta = 25°C , f = 2GHz) F - 1.1 1.6
Weitron
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A004R

Abstract: ALM80110 technologies systems. Pin connections and Package Marking x Wide Gain Control Range x High OIP3 across , GND 4 RFin 1 GND 5 6 RFout Note : Top View : Package marking provides orienation and , Consistency Distribution at 900MHz TC = 25°C, Vdd = 5.0V, Vbias = 4.0V LSL USL USL CPK=3 .09 .10 .11 .12 CPK=2.3 .13 Figure 2. Itotal at 900MHz 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 Figure 3. NF at 900MHz LSL LSL USL CPK=3 12 13 CPK=2.2 14
Avago Technologies
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MOSFET POWER TRANSISTOR

Abstract: Transistor,900MHz,20W DESCRIPTION RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz , 4-C1 High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 2.8+/-0.3 , power amplifiers in 900MHz band Mobile radio sets. 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED
Mitsubishi
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MOSFET POWER TRANSISTOR
Abstract: Transistor 900MHz,45W OUTLINE DRAWING 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 DESCRIPTION RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 4-C2 24.0+/-0.6 FEATURES High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz High , . 5.0+/-0.3 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm Mitsubishi
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100OHM

Abstract: RD45HMF1 PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 10.0 , "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS
Mitsubishi
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Abstract: Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for 900MHz-band RF power amplifiers 18.0+/-0.3 applications. 7.2+/-0.5 7.6+/-0.3 4-C1 High power gain: 2 Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz , APPLICATION 3.0+/-0.4 For output stage of high power amplifiers in 900MHz band Mobile radio sets. PIN 1.Drain 2.Source 3.Gate 5.1+/-0.5 2.3+/-0.3 3 UNIT:mm RoHS COMPLIANT RD20HMF1-101 Mitsubishi
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RD20HMF1

Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers , power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile , .Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate
Mitsubishi
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1008j

Abstract: .) 800MHz 900MHz 1.8GHz 2.0GHz 1.01 1.01 0.99 0.98 1.19 1.19 1.18 1.17 1.41 1.41 1.39 1.39 1.86 , concern arise regarding this product, please be sure to contact us immediately. ­ 101 ­ 00 Sep. 2010 , ) Reference Date Part No Inductance (nH)(Typ.) 800MHz 900MHz 1.8GHz Q(Typ.) 1.8GHz 2.0GHz 2.4GHz ELJRF1N0FB 0.95 0.95 0.96 2.0GHz 0.96 2.4GHz 0.97 800MHz 900MHz 31.8 , 735.5 800MHz 900MHz 71.2 76.8 65.1 69.8 52.7 56.2 55.9 59.6 48.6 51.3 48.6 51.3 49.6
Panasonic
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1008j ELJNA82NF ELJNAR10F ELJNAR12F ELJNAR15F ELJNAR18F ELJNAR22F

RD20HMF1

Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers , power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile , .Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate
Mitsubishi
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BLM18HE152SN1D

Abstract: CL10B103KBNC 800MHz 900MHz 1000MHz 800MHz 5.2 5.6 10.1 10.5 dBm dBm 5.3 7.0 9.0 1.1 1.2 1.2 , Noise Figure: 1.2dB Typ. at 900MHz Low Power Consumption Single Voltage Supply Operation Internal , °C/W 900MHz 1000MHz Tone Spacing=1MHz POUT per tone=-13dBm 800MHz 900MHz 1000MHz 800MHz, ZS =50 900MHz, ZS =50 1000MHz, ZS =50 900MHz 900MHz 900MHz Small Signal Gain 14.0 Output Power , Marking 6 5 4 L3Z 1 2 3 Alternate Marking with Trace Code Only Trace Code Ordering
RF Micro Devices
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SGL0163Z CL10B103KBNC BLM18HE152SN1D 800130 SGL-0163 MMIC SOT 363 marking CODE 81 100MH 1300MH 800MH 1000MH
Abstract: technologies systems. Pin connections and Package Marking â'¢ Wide Gain Control Range â'¢ High OIP3 , : Top View : Package marking provides orienation and identification â'80110â' = Device Code , -80110 Product Consistency Distribution at 900MHz TC = 25°C, Vdd = 5.0V, Vbias = 4.0V LSL USL USL CPK=3 .09 .10 .11 .12 CPK=2.3 .13 Figure 2. Itotal at 900MHz 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 Figure 3. NF at 900MHz LSL LSL USL CPK=3 12 13 CPK Avago Technologies
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Transistor C G 774 6-1

Abstract: 100OHM PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 10.0 , "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS
Mitsubishi
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Transistor C G 774 6-1 Transistor C 1279
Abstract: Transistor 900MHz,45W DESCRIPTION OUTLINE DRAWING RD45HMF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for 900MHz-band High power amplifiers 7.0+/-0.5 11.0+/-0.3 4-C2 24.0+/-0.6 FEATURES High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz 9.6+/-0.3 1 , amplifiers in 3.3+/-0.2 800-900MHz Band mobile radio sets. RoHS COMPLIANT RD45HMF1-101 is a RoHS , â'Gâ' after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL Mitsubishi
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CL10B103KBNC

Abstract: PHILLIPS 9C06031A0R00 dBm 800MHz 900MHz 1000MHz 800MHz 5.2 5.6 10.1 10.5 dBm dBm 900MHz 1000MHz Tone , 800MHz to 1300MHz High Input/Output Intercept Low Noise Figure: 1.2dB Typ. at 900MHz Low Power , 800MHz 900MHz 1000MHz 800MHz, ZS =50 1.7 1.7 dB dB 900MHz, ZS =50 1000MHz, ZS =50 15.7 , Condition 900MHz 900MHz 900MHz RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling , Identification Marking 6 5 4 6 5 4 L3Z L3 1 2 3 1 2 3 Alternate Marking with Trace Code Only
RF Micro Devices
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ML200C PHILLIPS 9C06031A0R00 LL1608-FS27NJ MMIC SOT 363 marking CODE h trace code marking RFMD 0163Z 9C06031A0R00 ECB-101761 DS091103 SGL-0163Z-EVB1 SGL-0163Z

4047N

Abstract: (nH)(Typ.) 800MHz 900MHz 1.8GHz 2.0GHz 1.01 1.01 0.99 0.98 1.19 1.19 1.18 1.17 1.41 1.41 1.39 1.39 , Tolerance Inductance (nH)(Typ.) 800MHz 900MHz 0.95 1.23 1.51 1.85 2.11 2.63 3.27 3.73 4.77 5.70 6.91 , 900MHz 31.8 31.0 32.9 31.1 28.3 28.0 29.9 29.7 33.9 30.0 28.9 31.0 29.8 30.8 28.8 31.1 31.3 28.4 28.4 , 735.5 800MHz 900MHz 71.2 76.8 65.1 69.8 52.7 56.2 55.9 59.6 48.6 51.3 48.6 51.3 49.6 52.7 50.2 53.0 , ) Dimensions in mm (not to scale) Marking Recommended Land Pattern in mm (not to scale) 2.0±0.2
Panasonic
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4047N ELJNA47NF ELJNA56NF ELJNA68NF ELJNAR27F ELJNAR33F ELJNAR39F
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