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marking 101 900MHz

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ±0.20 4.70 ±0.20 3.2768 ~ 90.0MHz 3.579 ~ 90.0MHz   Frequency range: 11.40  , © (>25.0 ~ 90.0MHz, 3rd OT)           ï , check with us before ordering. Tel: +44 1460 256 100 07 Nov 2013 Fax: +44 1460 256 101 E-mail , supplied on tape (no reel), or in bulk. Soldering Profile 260°C ±5°C 10s max °C Marking FREQUENCY DC 260 Marking type: Laser DC = Date code 200 5°C/s max Tape & Reel ... Golledge Electronics
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datasheet

2 pages,
154.69 Kb

GSX49-4 GSX49-3 TEXT
datasheet frame
Abstract: ~ 90.0MHz 3.579 ~ 90.0MHz  Calibration tolerance:       ï , © (>10.0 ~ 50.0MHz, fund) 100Ω (>25.0 ~ 90.0MHz, 3rd OT)      ï , . Tel: +44 1460 256 100 12 May 2014 Fax: +44 1460 256 101 E-mail: sales@golledge.com Web , reel), or in bulk. Soldering Profile 260°C ±5°C 10s max °C Marking FREQUENCY DC 260 Marking type: Laser DC = Date code 200 5°C/s max Tape & Reel Specification 4.00 1.50à ... Golledge Electronics
Original
datasheet

2 pages,
154.35 Kb

GSX49-4 GSX49-3 TEXT
datasheet frame
Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers , power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile , .Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate ... Mitsubishi
Original
datasheet

7 pages,
332.34 Kb

FET 748 20W power transistor 636 MOSFET TRANSISTOR TRANSISTOR D 1786 transistor 0882 0945 transistor 8814 mosfet RD20HMF1 MITSUBISHI RF POWER MOS FET D 1652 transistor TEXT
datasheet frame
Abstract: PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 10.0 , "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS ... Mitsubishi
Original
datasheet

7 pages,
341.3 Kb

RD45HMF1 MOSFET "CURRENT source" 100OHM TEXT
datasheet frame
Abstract: technologies systems. Pin connections and Package Marking · Wide Gain Control Range · High OIP3 across , . Note : Top View : Package marking provides orienation and identification "80110" = Device Code , the upper and lower specification limits. ALM-80110 ALM-80110 Product Consistency Distribution at 900MHz , =2.3 .13 Figure 2. Itotal at 900MHz 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 Figure 3. NF at 900MHz LSL LSL USL CPK=3 12 13 CPK=2.2 14 15 Figure 4. Gain at ... Avago Technologies
Original
datasheet

18 pages,
975.79 Kb

RO4350 ALM80110 A004R irl 1520 ALM-80110 TEXT
datasheet frame
Abstract: °C 1.Ts is the temperature at the soldering point of the collector tab. Device Marking BFR520 BFR520 , =900MHZ ) ( IC=20mA , VCE = 6V , Ta =25°C , f =2GHZ ) GUM - 15 9 - dB dB Insertion power gain ( IC=20mA , VCE = 6V , Ta = 25°C , f = 900MHz ) | S21 |² 13 14 - dB Noise figure ( s = opt , IC = 5mA , VCE = 6V , Ta = 25°C , f = 900MHz) ( s = opt , IC = 20mA , VCE = 6V , Ta = 25°C , f = 900MHz) ( s = opt , IC = 5mA , VCE = 6V , Ta = 25°C , f = 2GHz) F - 1.1 1.6 ... Weitron
Original
datasheet

8 pages,
247.92 Kb

900MHZ BFR520 TEXT
datasheet frame
Abstract: technologies systems. Pin connections and Package Marking x Wide Gain Control Range x High OIP3 across , GND 4 RFin 1 GND 5 6 RFout Note : Top View : Package marking provides orienation and , Consistency Distribution at 900MHz TC = 25°C, Vdd = 5.0V, Vbias = 4.0V LSL USL USL CPK=3 .09 .10 .11 .12 CPK=2.3 .13 Figure 2. Itotal at 900MHz 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 Figure 3. NF at 900MHz LSL LSL USL CPK=3 12 13 CPK=2.2 14 ... Avago Technologies
Original
datasheet

18 pages,
329.38 Kb

RO4350 ALM80110 ALM-80110 A004R TEXT
datasheet frame
Abstract: Transistor,900MHz,20W DESCRIPTION RD20HMF1 RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz , 4-C1 High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 2.8+/-0.3 , power amplifiers in 900MHz band Mobile radio sets. 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED ... Mitsubishi
Original
datasheet

9 pages,
482.58 Kb

MOSFET POWER TRANSISTOR RD20HMF1 TEXT
datasheet frame
Abstract: Transistor 900MHz,45W OUTLINE DRAWING 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 DESCRIPTION RD45HMF1 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 4-C2 24.0+/-0.6 FEATURES High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz High , . 5.0+/-0.3 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ... Mitsubishi
Original
datasheet

9 pages,
489.32 Kb

RD45HMF1 TEXT
datasheet frame
Abstract: PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 10.0 , "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS ... Mitsubishi
Original
datasheet

8 pages,
373.45 Kb

RD45HMF1 100OHM TEXT
datasheet frame

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