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900MHZ-AMP-EVK Freescale Semiconductor 900MHZ AMPLIFIER EVAL KI ri Buy
1900MHZ-AMP-EVK Freescale Semiconductor AMPLIFIER EVAL KIT ri Buy
TBP-INT-CC-01 Texas Instruments Proprietary 900MHz ri Buy

marking 101 900MHz

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Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers , power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile , UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate ... Original
datasheet

7 pages,
332.34 Kb

FET 748 636 MOSFET TRANSISTOR 20W power transistor TRANSISTOR D 1786 RD20HMF1 D 1652 transistor MITSUBISHI RF POWER MOS FET RD20HMF1 abstract
datasheet frame
Abstract: PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 , letter "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS ... Original
datasheet

7 pages,
341.3 Kb

RD45HMF1 MOSFET "CURRENT source" 100OHM RD45HMF1 abstract
datasheet frame
Abstract: °C 1.Ts is the temperature at the soldering point of the collector tab. Device Marking , =900MHZ ) ( IC=20mA , VCE = 6V , Ta =25°C , f =2GHZ ) GUM - 15 9 - dB dB Insertion power gain ( IC=20mA , VCE = 6V , Ta = 25°C , f = 900MHz ) | S21 |² 13 14 - dB Noise figure ( s = opt , IC = 5mA , VCE = 6V , Ta = 25°C , f = 900MHz) ( s = opt , IC = 20mA , VCE = 6V , Ta = 25°C , f = 900MHz) ( s = opt , IC = 5mA , VCE = 6V , Ta = 25°C , f = 2GHz) F - 1.1 1.6 ... Original
datasheet

8 pages,
247.92 Kb

BFR520 900MHZ BFR520 abstract
datasheet frame
Abstract: Transistor,900MHz,20W DESCRIPTION RD20HMF1 RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications. 7.2+/-0.5 OUTLINE DRAWING 22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1 High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 2.8+ , high power amplifiers in 900MHz band Mobile radio sets. 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is ... Original
datasheet

9 pages,
482.58 Kb

RD20HMF1 RD20HMF1 abstract
datasheet frame
Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers , power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile , UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate ... Original
datasheet

8 pages,
388.35 Kb

RD20HMF1 RD20HMF1 abstract
datasheet frame
Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers , power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile , UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate ... Original
datasheet

8 pages,
305.25 Kb

RD20HMF1 RD20HMF1 abstract
datasheet frame
Abstract: Transistor 900MHz,45W OUTLINE DRAWING 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 DESCRIPTION RD45HMF1 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 4-C2 24.0+/-0.6 FEATURES High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz High Efficiency , 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM ... Original
datasheet

9 pages,
489.32 Kb

RD45HMF1 RD45HMF1 abstract
datasheet frame
Abstract: PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 , letter "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS ... Original
datasheet

8 pages,
373.45 Kb

RD45HMF1 100OHM RD45HMF1 abstract
datasheet frame
Abstract: PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 , letter "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS ... Original
datasheet

8 pages,
315.3 Kb

Transistor C 1279 RD45HMF1 100OHM Transistor C G 774 6-1 RD45HMF1 abstract
datasheet frame
Abstract: SIEMENS Silicon Schottky Diode · Low Barrier diode for detectors up to GHz frequencies BAT 62-03W ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Q62702-A1028 Q62702-A1028 Pin Configuration 1=A 2=C Package SOD-323 BAT 62-03V\ L Maximum Ratings , V0 = f ( V¡ ) f = 900MHz f?L = parameter in Q 0 5 10 16 20 » V V, 30 10° 101 102 103 jn V Semiconductor Group 294 03.96 ... OCR Scan
datasheet

3 pages,
59.51 Kb

datasheet abstract
datasheet frame

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Handsfree IC 1998-06-16 AN98061 AN98061 AN98061 AN98061: Application 101 1 0 /catalog/appnotes/28428.html Applicationnotes for /amplifiers Title Date PAGER: Preamplifier for pager applications LNA9M403 LNA9M403 LNA9M403 LNA9M403: 900MHz LOW NOISE AMPLIFIER WITH
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Philips 25/04/2003 954.24 Kb TXT docindex.txt
VAF=127.5 + NR=0.9995 + 101 1 0 /models/bc369_3.html Model : BC369 BC369 BC369 BC369 3 BC369 BC369 BC369 BC369 .MODEL QBC369 QBC369 QBC369 QBC369 PNP + IS=2.105E-13 105E-13 105E-13 105E-13
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Philips 14/02/2002 998.47 Kb TXT docindex-v2.txt
: P83CE528 P83CE528 P83CE528 P83CE528 for High-end RDS/EON car 101 1 0 /catalog/appnotes/28108.html Applicationnotes for CD Audio Title systems/mixer/amplifiers Title Date LNA9M403 LNA9M403 LNA9M403 LNA9M403.pdf: 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W BFG403W BFG403W BFG403W 1997-01-06
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Philips 16/06/2005 2589.32 Kb TXT docindex-v1.txt
); searchDB[101] = new searchOption("CDP68HC68T1 CDP68HC68T1 CDP68HC68T1 CDP68HC68T1", "CMOS Serial Real-Time Clock With RAM and Power Sense
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Intersil 13/10/2005 1108.55 Kb JS searchdb.js