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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers , power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile , UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate ... | Original |
7 pages, |
RD20HMF1 636 MOSFET TRANSISTOR 20W power transistor D 1652 transistor MITSUBISHI RF POWER MOS FET RD20HMF1 abstract |
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| Abstract: PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 , letter "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS ... | Original |
7 pages, |
RD45HMF1 MOSFET "CURRENT source" 100OHM RD45HMF1 abstract |
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| Abstract: °C 1.Ts is the temperature at the soldering point of the collector tab. Device Marking , =900MHZ ) ( IC=20mA , VCE = 6V , Ta =25°C , f =2GHZ ) GUM - 15 9 - dB dB Insertion power gain ( IC=20mA , VCE = 6V , Ta = 25°C , f = 900MHz ) | S21 |² 13 14 - dB Noise figure ( s = opt , IC = 5mA , VCE = 6V , Ta = 25°C , f = 900MHz) ( s = opt , IC = 20mA , VCE = 6V , Ta = 25°C , f = 900MHz) ( s = opt , IC = 5mA , VCE = 6V , Ta = 25°C , f = 2GHz) F - 1.1 1.6 ... | Original |
8 pages, |
BFR520 900MHZ BFR520 abstract |
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| Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers , power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile , UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate ... | Original |
8 pages, |
RD20HMF1 RD20HMF1 abstract |
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| Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers , power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile , UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate ... | Original |
8 pages, |
RD20HMF1 RD20HMF1 abstract |
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| Abstract: PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 , letter "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS ... | Original |
8 pages, |
RD45HMF1 100OHM RD45HMF1 abstract |
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| Abstract: PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz , Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 , letter "G" after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS ... | Original |
8 pages, |
Transistor C 1279 RD45HMF1 100OHM RD45HMF1 abstract |
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| Abstract: technologies systems. Pin connections and Package Marking · Wide Gain Control Range · High OIP3 across , Control. Note : Top View : Package marking provides orienation and identification "80110" = Device , 900MHz TC = 25°C, Vdd = 5.0V, Vbias = 4.0V LSL USL USL CPK=3 .09 .10 .11 .12 CPK=2.3 .13 Figure 2. Itotal at 900MHz 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 Figure 3. NF at 900MHz LSL LSL USL CPK=3 12 13 CPK=2.2 14 15 Figure 4. Gain ... | Original |
18 pages, |
RO4350 ALM80110 A004R ALM-80110 ALM-80110 abstract |
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| Abstract: technologies systems. Pin connections and Package Marking x Wide Gain Control Range x High OIP3 across , GND 4 RFin 1 GND 5 6 RFout Note : Top View : Package marking provides orienation and , Consistency Distribution at 900MHz TC = 25°C, Vdd = 5.0V, Vbias = 4.0V LSL USL USL CPK=3 .09 .10 .11 .12 CPK=2.3 .13 Figure 2. Itotal at 900MHz 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 Figure 3. NF at 900MHz LSL LSL USL CPK=3 12 13 CPK=2.2 14 ... | Original |
18 pages, |
RO4350 ALM80110 ALM-80110 A004R ALM-80110 abstract |
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| Abstract: equipment and automatic insertion through the tape packing. 1.6�1 q 1.0�1 q 0.4 0.2�05 , 0.75�15 2 1:Base 2:Emitter 3:Collector 0.2�1 EIAJ:SC� SS'ini Type Package Marking symbol , 10 30 100 Cob - VCB 0.8 30 3 Collector current IC (mA) VCE=0.3V f=900MHz Noise figure NF (dB) 2 10 30 0.1 0.1 100 4.0 3 100 1.2 VCE=0.3V f=900MHz ... | Original |
2 pages, |
2SC5363 2SC5363 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| . VCE = 3 V. handbook, halfpage 5 4 1 3 2 0 10'1 101 F (dB) IC (mA) 1000 MHz 2000 MHz 500 MHz 900 MHz . handbook, halfpage 10'1 101 20 15 5 '5 10 0 Gass (dB) IC (mA) MGD686 MGD686 MGD686 MGD686 f = 900 MHz 1GHz 2 GHz Fig.12 insertion power gain IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C 14 15 ' dB GUM maximum unilateral power gain IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C ' 17 ' dB F noise figure IC = 1 mA; VCE = 3 V; f = 900 MHz; "S = "opt ' 1.1 1.6 dB Rth j-s thermal resistance from junction to soldering point single www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFM505_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| ; typical values. handbook, halfpage20 10 5 0 15 MLD483 MLD483 MLD483 MLD483 10'3 10'2 10'1IC (mA) s21 2 (dB) f = 900 MHz; VS = 4 BGA2011 BGA2011 BGA2011 BGA2011 900 MHz high linear low noise amplifier book, halfpage MBD128 MBD128 MBD128 MBD128 2000 Dec 04 2 Philips Semiconductors Product specification 900 MHz high linear low noise amplifier BGA2011 BGA2011 BGA2011 BGA2011 FEATURES • Low current, low |2 insertion power gain in application circuit, see Fig.2; f = 900 MHz 19 ' dB NF noise figure IS = 15 mA; f = 900 MHz 1.7 ' dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS DC supply voltage RF input AC coupled www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BGA2011_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| power gain IC = 20 mA; VCE = 6 V; Tamb = 25 °C f = 900 MHz - 15 - dB f = 2 GHz - 9 - dB Philips ; f = 900 MHz 13 14 - dB NF noise figure "s = "opt; Tamb = 25 °C IC = 5 mA; VCE = 6 V; f = 900 MHz - 1.1 1.6 dB IC = 20 mA; VCE = 6 V; f = 900 MHz - 1.6 2.1 dB IC = 5 mA; VCE = 8 V; f = 2 GHz - 1.9 - d - GHz GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; Tamb = 25 °C [1] f = 900 MHz - 15 - dB f = 2 GHz - 9 - dB s212 insertion power gain IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz 13 14 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFR520_3.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| maximum unilateral power gain IC = 40 mA; VCE = 8 V; Tamb = 25 °C f = 900 MHz - 14 - dB f = 2 GHz - 7 - d V; Tamb = 25 °C; f = 900 MHz 12 13 - dB NF noise figure "s = "opt; VCE = 8 V; Tamb = 25 °C IC = 10 mA; f = 900 MHz - 1.3 1.8 dB IC = 40 mA; f = 900 MHz - 1.9 2.4 dB IC = 10 mA; f = 2 GHz - 2.1 - dB Table maximum unilateral power gain IC = 40 mA; VCE = 8 V; Tamb = 25 °C [1] f = 900 MHz - 14 - dB f = 2 GHz - 7 - dB |s21|2 insertion power gain IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz 12 13 - dB 9397 750 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFR540_5.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| MHz f = 900 MHz Fmin 900 MHz 500 MHz Gass 10'1 Rev. 04 - 22 November 2007 6 of 13 NXP ' 9 ' GHz GUM maximum unilateral power gain VCE = 6 V; IC = 5 mA; Tamb = 25 °C; f = 900 MHz ' 20 ' d mA; Tamb = 25 °C; f = 900 MHz 16 17 ' dB F noise figure "s = "opt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 °C; f = 900 MHz ' 1.2 1.7 dB "s = "opt; VCE = 6 V; Ic = 5 mA; Tamb = 25 °C; f = 900 MHz ' 1.6 2 power gain, assuming S12 is zero and 2. VCE = 6 V; IC = 5 mA; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG505_X_N_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| MHz f = 900 MHz Fmin 900 MHz 500 MHz Gass 10'1 Rev. 04 - 22 November 2007 6 of 13 NXP ' 9 ' GHz GUM maximum unilateral power gain VCE = 6 V; IC = 5 mA; Tamb = 25 °C; f = 900 MHz ' 20 ' d mA; Tamb = 25 °C; f = 900 MHz 16 17 ' dB F noise figure "s = "opt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 °C; f = 900 MHz ' 1.2 1.7 dB "s = "opt; VCE = 6 V; Ic = 5 mA; Tamb = 25 °C; f = 900 MHz ' 1.6 2 power gain, assuming S12 is zero and 2. VCE = 6 V; IC = 5 mA; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG505_X_N_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| gain IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz - 17 - dB IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz - 10 - dB S212 insertion power gain IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz 13 14 A; VCE = 6 V; Tamb = 25 °C; f = 900 MHz - 1.2 1.7 dB "s = "opt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz - 1.6 2.1 dB "s = "opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz - 1.9 - dB Table 1 GHz - 9 - GHz GUM maximum unilateral power gain IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz [1 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFR505_3.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| ; VCB = 3 V; f = 1 MHz ' 0.4 ' pF fT transition frequency IC = 20 mA; VCE = 3 V; f = 900 MHz ' 9 ' GHz insertion power gain IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C 13 14.5 ' dB GUM maximum unilateral power gain IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C ' 15 ' dB F noise figure IC = 5 mA; VCE = 3 V; f = 900 MHz; "S = "opt ' 1.2 1.6 dB Rth j-s thermal resistance from junction to soldering point ; note 1 IC = 20 mA; VCE = 3 V; Tamb = 25 °C; f = 900 MHz ' 15 ' dB IC = 20 mA; VCE = 3 V; Tamb = 25 °C www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFM520_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| handbook, halfpage MRC018 MRC018 MRC018 MRC018 0 1 2 3 4 10'1 1 10IC (mA) F (dB) 500 MHz 900 MHz f = 2 GHz Fig.10 Minimum noise maximum unilateral power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C ' 17 ' dB F noise figure IC = 1.25 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C ' 1.2 1.7 dB SYMBOL PARAMETER CONDITIONS MIN. MAX , assuming S12 is zero and 2. IC = 5 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq maximum unilateral power gain; note 1 IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz ' 17 ' dB f = 2 GHz www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFR505T_3.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| GHz; Tamb = 25 °C ' 9 ' GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C ' 14 ' dB F noise figure IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C ' 1.3 1.7 dB SYMBOL power gain, assuming s12 is zero and 2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p'q) = 898 MHz and at f(2q'p) = 904 MHz. SYMBOL PARAMETER ; f = 900 MHz; Tamb = 25 °C ' 14 ' dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C ' 8 ' dB |s21 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFS540_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |