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Part Manufacturer Description Datasheet BUY
ISL6146BFRZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146BFRZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146EFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146BFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy

marking K gaas fet

Catalog Datasheet MFG & Type PDF Document Tags

gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source
Mitsubishi
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MGF4851A MGF4921AM gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet marking J GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A

FMC141401-02

Abstract: fujitsu gaas marking code APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User , ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1) Screw
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

Siemens A 1458

Abstract: FET marking code 365 Semiconductor Group 1664 09.96 SIEMENS GaAs FET CLY15 Permissible K/N Pulse Laad , SIEMENS GaAs FET CLY15 Datasheet * Power am plifier for mobile phones * For frequencies , 09.96 SIEMENS GaAs FET CLY 15 Electrical characteristics (T4 = 25°C, unless otherwise , . Semiconductor Group 1660 09.96 SIEMENS GaAs FET CLY15 Output Charateristics VDStV , [dBm] Semiconductor Group 1661 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter
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Siemens A 1458 FET marking code 365 Q62702-L99

date code marking NEC

Abstract: code marking NEC PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A 4-PIN SOP, 2.2 LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , CP(K) Printed in Japan The mark · shows major revised points. © 1998, 2001 PS7200H-1A PACKAGE DIMENSIONS (UNIT: mm) 4.0±0.5 TOP VIEW 4 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET
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date code marking NEC code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking PS7200H-1A-E3 P13560EJ2V0DS00

XMFP1-M3

Abstract: D 8243 HC GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co , Characteristics / Handling of Test Board 19 GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS , Marking A : Part No. B : Lot No. 2.9 A Bk (2) 1.9 B 0.8 0.8 0.3 (1) (3 , (3): Source (4): Drain Marking A : Part No. B : Lot No. (in mm) 1 cABSOLUTE MAXIMUM , Fmin S12 XMFS3-M1 S22 freq. MAG ANG MAG ANG MAG ANG MAG ANG (MHz) S11 K S21 S12
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XMFP1-M3 D 8243 HC E176 OF FET E176 e170315 E176 field effect transistor

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 .45 7.2 Power GaAs FET, GaAs MMIC, GaAs MCM , .47 8.4 GaAs MES FET Hermitical Package .48 8.5 GaAs MES GaAs MES FET Chip .48 8.7 UHF Dual Gate GaAs MES FET
NEC
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marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y g2b 6-pin smd NE92039 P14740 P14740EE5V0PF00

UAA 1006

Abstract: manual* cygnus sl 5000 .61 K Band Power GaAs FET Chip , .56 Power GaAs FET, GaAs MMIC, GaAs MCM , ) .59 GaAs MES FET , .60 GaAs MES FET Chip .60 GaAs MES FET
NEC
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UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G gaas fet T79 pc1658 D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925

414 monolithic amplifier

Abstract: 5253 1007 Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , stages with internal DC blocking capacitors at input and output. They are fabricated using GaAs FET , Design" to reduce ground path inductance for best performance. 1 Monolithic GaAs FET MMIC , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves
Mini-Circuits
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VNA-25 414 monolithic amplifier 5253 1007 mcl-25 rf VNA-25 equivalent 6635 fet 2002/95/EC RO4350 IPC/JEDECJ-STD-020C C/85RH

gaas fet marking a

Abstract: cly 2 GaAs FET CLY 2 GaAs FET , Aktiengesellschaft pg. 1/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 2/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 3/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 4/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET
Siemens
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Q62702-L96 cly 2 GaAs FET marking code 5 siemens gaas fet SIEMENS MAG 6000

siemens gaas fet

Abstract: marking S221 SIEMENS Datasheet GaAs FET CLY 2 * Power amplifier for mobile phones * For frequencies up , soldering point to the pcb. Semiconductor Group 1637 12.96 SIEMENS GaAs FET CLY 2 , 12.96 SIEMENS GaAs FET CLY 2 Output Characteristics 0,5 t ·Ptotoc Draincurrent [A , /> Semiconductor Group 1639 12.96 SIEMENS GaAs FET CLY 2 VDS = 3 V typ. Common Source , Additional S-Parameter available on CD Semiconductor Group 1640 12.96 SIEMENS GaAs FET CLY
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marking S221 TMS 1600

GaAs FET cfy 14

Abstract: GaAs FET cfy 19 CFY 35 GaAs FET , . TriQuint Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 1/5 CFY 35 GaAs FET , 35 GaAs FET , Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 3/5 CFY 35 GaAs FET , 80.3 TriQuint Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 4/5 GaAs FET CFY 35
TriQuint Semiconductor
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Q62702-F1393 Q62702-F1394 GaAs FET cfy 14 GaAs FET cfy 19 CFY 10 Ga FET marking k f5035 F1393 D-81829
Abstract: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , =12GHz, Pin=-5dBm Note: P1B and Glp are tested with sampling inspection. 1 < Power GaAs FET , ¼š Gate 解 Source 回 Drain < Power GaAs FET > MGF1952A Leadless ceramic package TYPICAL , VOLTAGE VGS(V) 0.0 < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS (VDS , interested, please contact our sales offices. < Power GaAs FET > MGF1952A Leadless ceramic package Mitsubishi
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SIEMENS 230 92 O

Abstract: siemens gaas fet SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fm jn = 1.4 dB @ 4 G H z) * High gain , . Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HLEH PD 21 SIEMENS GaAs FET CFY 30 , 11.01.1996 HL EH PD 21 SIEMENS GaAs FET CFY30 Typical Common Source Noise Parameters I = 15 mA , ] Siemens Aktiengesellschaft pg. 3/6 11.01.1996 HL EH PD 21 SIEMENS GaAs FET CFY 30 , SIEMENS GaAs FET Typical Common Source S-Parameters lD = 15mA Up = 3.5 V S21 Mag 2.43 2.43 2.43 2.43
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SIEMENS 230 92 O CFY 18 FET GAAS marking a siemens 230 98 O siemens 230 99 o Q62703-F97

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 ) GaAs Device products HJ-FETs (Hetero Junction FET) Discretes FETs MES FETs Power FETs , covers "Silicon Microwave Transistors", "Silicon Microwave Monolithic ICs" and "Microwave GaAs Devices". Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are , . 36 3.2.4 Low Noise GaAs FETs, HBTs, HJ-FETs , ). 55 6. MARKING/PART NUMBER
NEC
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nec mosfet marked v75 NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram marking code C1E mmic G0706 PX10727EJ02V0PF

F5049

Abstract: siemens gaas fet CFY 30 GaAs FET , . Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HL EH PD 21 CFY 30 GaAs FET , figure V = 3.5 V IDSS min dBm 11.01.1996 HL EH PD 21 CFY 30 GaAs FET , 150 T A ; T S [ °C ] 11.01.1996 HL EH PD 21 CFY 30 GaAs FET , pg. 5/6 11.01.1996 HL EH PD 21 CFY 30 GaAs FET
Siemens
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F5049 76 marking code SIEMENS HL 050 118 31 04 FET marking code FET marking codes FET transistors with s-parameters

CFY30

Abstract: CFY 18 SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fw, = 1.4 dB @ 4 G H z ) * High gain , 1541 01.96 SIEMENS GaAs FET CFY 30 Electrical characteristics at Ta = 25°C, unless , 1542 01.96 SIEMENS GaAs FET CFY30 Typical Common Source Noise Parameters I = 15 mA D , ] Semiconductor Group 1543 01.96 SIEMENS GaAs FET CFY30 Output characteristics l0 = f (VD S , SIEMENS GaAs FET CFY30 Typical Common Source S-Parameters ID = 15 mA f GHz 0.1 0.4 0.8 1.2 1.6
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rogers* RO4003C

Abstract: mgf1941 < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , are not tested. Publication Date : Mar., 2012 CSTG-14554 1 < Power GaAs FET > MGF1941AL , < Power GaAs FET > MGF1941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) I , 1.0 0 10 20 ID(mA) 30 40 50 0 Pin (dBm ) Publication Date : Mar., 2012 3 < Power GaAs FET , /Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 4 < Power GaAs FET > MGF1941AL
Mitsubishi
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rogers* RO4003C mgf1941 137 marking Micro-X gaas fet micro-X gaas fet micro-X Package GD-32

gaas fet marking J

Abstract: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , with sampling inspection. Gs/NFmin are not tested. 1 < Power GaAs FET > MGF1941AL Micro-X , 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.â'¡Â±0.1 (GD-32) < Power GaAs FET > MGF1941AL , CURRENT ID(mA) Ta=25deg.C VDS=3V 90 < Power GaAs FET > MGF1941AL Micro-X type plastic , =0.508mm) < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. 1
Mitsubishi
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Abstract: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7801E-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801E-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , CONNECTION (Top View) 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET APPLICATIONS · Measurement , CP(K) Printed in Japan NEC Compound Semiconductor Devices, Ltd. 2005 PS7801E-1A PACKAGE NEC
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PS7801E-1A-F3 PN10569EJ01V0DS
Abstract: < Power GaAs FET > MGF1953A Leadless ceramic package DESCRIPTION The MGF1953A power MES FET , GaAs FET > MGF1953A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , Publication Date : Apr., 2011 2 < Power GaAs FET > MGF1953A Leadless ceramic package TYPICAL , ) Publication Date : Apr., 2011 3 < Power GaAs FET > MGF1953A Leadless ceramic package S PARAMETERS , GaAs FET > MGF1953A Leadless ceramic package Keep safety first in your circuit designs! · Mitsubishi
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