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marking G5

Catalog Datasheet MFG & Type PDF Document Tags

dd127d

Abstract: dd127db Temic TELEFUNKEN Semiconductors BF 550 / BF 550 R Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features â'¢ High power gain â'¢ Low noise figure 1 R y y «9280 BF550 Marking: G2 Plastic case (SOT 23) 1= Collector, 2= Base; 3= Emitter 1 H uâ'"ff BF550R Marking: G5 Plastic case (SOT 23R) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Symbol Value Unit Collector-base voltage -VcBO 40 V Collector-emitter voltage -VcEO 40 V
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OCR Scan
dd127d dd127db marking g5 dd127 BF transistor Sot-23R 0G12705 DD127D

marking rj sod-123

Abstract: SS1040 DATA SHEET SS1040 SURFACE MOUNT SCHOTTKY DIODES VOLTAGE 40 Volts CURRENT 1.0A SOD-123 Unit:inch(mm) FEATURE Fast switching speed Surface mount package ideally suited for automatic insertion Electrical identical standard JEDEC High conductor MECHANICAL DATA Case:SOD-123 plastic Terminals: Solderable per MIL-STD-202,Method 208 Approx Weight: 0.008 gram Marking:G5 ABSOLUTE RATINGS PARAMETER SYMBOL SS1040 UNIT VR 40 V VRRM 40 V IO 1.0 A IFSM 30 A
PanJit International
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marking rj sod-123 3000/T
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UMG5N dual digital transistors (PNP+PNP) SOT-353 FEATURES Two DTA114Y chips in a package 1 Marking: G5 Equivalent circuit Absolute maximum ratings (Ta=25â"ƒ) Symbol Parameter Value Units VCC Supply Voltage 50 V IC(MAX) Output Current 100 mA -6 to +40 V Vi Input Voltage PD Power Dissipation 150 mW TJ Junction Temperature 150 â Jiangsu Changjiang Electronics Technology
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100MH
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMG5N dual digital transistors (PNP+PNP) SOT-363 FEATURES Two DTA114Y chips in a package Marking: G5 1 Equivalent circuit Absolute maximum ratings (Ta=25â"ƒ) Symbol Parameter Value Units VCC Supply Voltage 50 V IC(MAX) Output Current 100 mA -6 to +40 V Vi Input Voltage PD Power Dissipation 150 mW TJ Junction Temperature Jiangsu Changjiang Electronics Technology
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MARKING G2

Abstract: BF550 BF 550 / BF 550 R TELEFUNKEN Semiconductors Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 2 1 3 3 2 94 9280 BF550 Marking: G2 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter 95 10527 BF550R Marking: G5 Plastic case (SOT 23R) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage
Temic Semiconductors
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MARKING G2 88/540/EEC 91/690/EEC D-74025

MARKING G5

Abstract: schottky diode sod-123 marking code 120 per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.01 grams (approx.) Marking: G5 Lead , Capacitance 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION RECOMMENDED FOOTPRINT 0.036 (0.91) G5 Cathode G5 0.048 (1.22) = Polarity Band = Device Code 0.093 (2.36) inches
Won-Top Electronics
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SS1040-T1 schottky diode sod-123 marking code 120 SS1040-T1-LF

BF550

Abstract: BF550R BF550/BF550R Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 2 1 3 3 94 9280 BF550 Marking: LA Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter 2 95 10527 BF550R Marking: G5 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total
Temic Semiconductors
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marking A1 TRANSISTOR marking LA
Abstract: MIL-STD-750, Method 2026 · Approx. Weight: 0.0004 ounces, 0.01 grams · Marking : G5 · Polarity : Color PanJit International
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RB500V-40 66B5B
Abstract: MIL-STD-750, Method 2026 · Approx. Weight: 0.0004 ounces, 0.01 grams · Marking : G5 · Polarity : Color PanJit International
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SINGLEPHASEHALFWAVE60H
Abstract: , 0.01 grams 0.005(0.12)MAX. 0.016(0.40)MIN. â'¢ Marking : G5 â'¢ Polarity : Color band cathode PanJit International
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2002/95/EC IEC61249
Abstract: SS1040 SURFACE MOUNT SCHOTTKY BARRIER VOLTAGE FEATURES · Fast switching speed .028(0.7) .019(0.5) 40 Volts CURRENT 1.0 Ampers SOD-123 Unit: inch (mm) .154(3.90) .141(3.60) .110(2.8) .098(2.5) · Electrical identical standard JEDEC. · High conductor · In compliance with EU RoHS 2002/95/EC directives · Case: SOD-123, Plastic · Terminals: Solderable per MIL-STD-750, Method 2026 · Approx. Weight: 0.008 gram · Marking : G5 · Polarity : Color band cathode .008(.20)MAX .005 PanJit International
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Abstract: , 0.01 grams Polarity: Color band denotes cathode end Marking: G5 ABSOLUTE RATINGS P a ra me te r PanJit International
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2011/65/EU

SS1040

Abstract: , 0.01 grams · Marking : G5 · Polarity : Color band cathode 0.005(0.12)MAX. 0.008(0.20)MAX. 0.053(1.35
PanJit International
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SS1040

Abstract: .016(.40)MIN .005(.12)MAX · Marking : G5 · Polarity : Color band cathode ABSOLUTE RATINGS
PanJit International
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Abstract: : Solderable per MIL-STD-202, Method 208 .016(.40)MIN .005(.12)MAX Approx. Weight: 0.008 gram Marking : G5 ABSOLUTE RATINGS PA RA M E TE R S ym b o l Va l ue U ni t s VR 40 V V RRM PanJit International
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Abstract: Terminals: Solderable per MIL-STD-202G, Method 208 Approx. Weight: 10.2mg Marking : G5 .005(.12)MAX Promax-Johnton
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EMG5

Abstract: SOT-353 marking code B2 Tape width ordering (mm) (mm) unit (pcs) 180 180 8 8 8,000 3,000 Marking G5 G5 www.rohm.com © 2012
ROHM
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EMG5 SOT-353 marking code B2 SC-107BB SC-88A DTC114Y R1120A

2N4427 equivalent

Abstract: ZT Ferranti metal can Device or E-line Device Type marking equivalent B.S. number* Page Type marking , MHz pF 2N2218A 75 40 35 285 40 120 150 10 0.3 150 15 250 8 G5 2N2219A 75 40 35 285 100 300 150 10 0.3 150 15 300 8 G5 2N2221A 75 40 35 285 40 120 150 10 0.3 150 15 250 8 G5 2N2222A 75 40 35 285 100 300 150 10 0.3 150 15 300 8 G5 2N2218 60 30 35 285 40 120 150 10 0.4 150 15 250 8 G5 2N2219 60 30 35 285 100 300 150 10 0.4 150 15 250 8 G5 2N2221 60 30 35 285 40 120 150 10 0.4 150 15 250 8 G5 2N2222
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OCR Scan
BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N4427 equivalent ZT Ferranti BZX88-C4V3 diode BAW67 f025 ferranti

2N2907 equivalent

Abstract: ferranti micro-e metal can Device or E-line Device Type marking equivalent B.S. number* Page Type marking , MHz pF 2N2218A 75 40 35 285 40 120 150 10 0.3 150 15 250 8 G5 2N2219A 75 40 35 285 100 300 150 10 0.3 150 15 300 8 G5 2N2221A 75 40 35 285 40 120 150 10 0.3 150 15 250 8 G5 2N2222A 75 40 35 285 100 300 150 10 0.3 150 15 300 8 G5 2N2218 60 30 35 285 40 120 150 10 0.4 150 15 250 8 G5 2N2219 60 30 35 285 100 300 150 10 0.4 150 15 250 8 G5 2N2221 60 30 35 285 40 120 150 10 0.4 150 15 250 8 G5 2N2222
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OCR Scan
2N929 BAW63A BSS56 2N2907 equivalent ferranti micro-e equivalent for 2N2219 BZX88C18 BFS37 2N2605 BAW63B BFS37A

2N2475

Abstract: 2N2369 equivalent metal can Device or E-line Device Type marking equivalent B.S. number* Page Type marking , 2N2218A 75 40 35 285 40 120 150 10 0.3 150 15 250 8 G5 2N2219A 75 40 35 285 100 300 150 10 0.3 150 15 300 8 G5 2N2221A 75 40 35 285 40 120 150 10 0.3 150 15 250 8 G5 2N2222A 75 40 35 285 100 300 150 10 0.3 150 15 300 8 G5 2N2218 60 30 35 285 40 120 150 10 0.4 150 15 250 8 G5 2N2219 60 30 35 285 100 300 150 10 0.4 150 15 250 8 G5 2N2221 60 30 35 285 40 120 150 10 0.4 150 15 250 8 G5 2N2222 60 30 35
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OCR Scan
2N2475 2N2369 equivalent BZX88-C18 ic marking z7 2N2604 BAW64 BFS38 BAW65 BFS38A BAW66
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