NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Qgd VDS = -10V, ID = -2.7A, 1.4 nC 0.65 VGS =-4.5V nC Drain-Source Diode , Dual-transistors CJ5853DC CJ5853DC P-channel MOSFET and Schottky Diode FEATURES · Featuring a MOSFET and Schottky Diode · Independent Pinout to each Device to Ease Circuit Design · Ultra Low VF Schottky Applications , Brushless DC Motors · Power Management in Portable, Battery Powered Products Marking: pin connections , , Junction-to-Ambient 110 /W SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25°C unless otherwise noted) Symbol ... | Original |
5 pages, |
marking 27A DIODE CJ5853DC 2-08L-B 2-08L-B abstract |
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| Abstract: 20V VGS = -20V ID = 2.7A VDS = 200V VGS = 10V, See Fig. 6 and 13 VDD = 125V ID = 2.7A R G = 24 , IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward , reverse ннн ннн 6.3 p-n junction diode. ннн ннн 2.0 V TJ = 25â-'C, IS = 0.79A, VGS = 0V ннн 190 390 ns TJ = 25â-'C, I F = 2.7A ннн 0.64 1.3 â•¡C di/dt = 100A/â•¡s Intrinsic turn-on time is negligible ... | Original |
4 pages, |
IRFL014 EIA-541 314P marking code 27a FL014 datasheet abstract |
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| Abstract: ULTRAFAST SOFT RECOVERY DIODE Features · UltraFast: Optimized for high operating frequencies 8-40 kHz , Lead-Free C VCES = 600V VCE(on) typ. = 1.65V G @VGE = 15V, IC = 27A E n-ch an nel , Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current , Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient , 1.65 2.0 IC = 27A VGE = 15V VCE(on) - 2.0 -V IC = 55A See Fig. 2, 5 - 1.6 -IC = 27A ... | Original |
3 pages, |
marking 27A DIODE IRG4PC50UDPBF IRFPE30 DIODE 27A 55A TO-247AC 035H datasheet abstract |
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| Abstract: DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 , IGBT C VCES = 600V VCE(on) typ. = 1.50V G @VGE = 15V, IC = 27A E n-channel Benefits , Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current , Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient , Voltage -Forward Transconductance 9.2 gfe ICES Zero Gate Voltage Collector Current -Diode ... | Original |
3 pages, |
IRFPE30 035H datasheet abstract |
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| Abstract: RDS(on) = 20£2 lD = 2.7A Description Third Generation HEXFETs from International Rectifier provide , © 61 mJ Iar Avalanche Current © 2.7 A Ear Repetitive Avalanche Energy © 3.6 mJ dv/dt Peak Diode , Vgs=20V Gate-to-Source Reverse Leakage - - -100 Vgs=-20V Qg Total Gate Charge - - 8.2 nC Id=2.7A , ) Charge - - 4.5 td(on) Turn-On Delay Time - 7.0 - ns Vdd=125V Id=2.7A Rg=24£2 Rd=45£2 See Figure 10© t , Current (Body Diode) - - 2.7 A MOSFET symbol _^ showing the / I integral reverse a-\ |*1 p-n junction ... | OCR Scan |
6 pages, |
IRF614 IRF614 abstract |
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| Abstract: SMG2304 SMG2304 2.7A, 25V,RDS(ON) 117m Elektronische Bauelemente N-Channel Enhancement Mode Power , G Marking : 2304 S Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage , changing of specification will not be informed individual Page 1 of 5 SMG2304 SMG2304 2.7A, 25V,RDS(ON , Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current(Body Diode) 1 Pulsed Source Current(Body Diode) ISM o IS=1.25A ,VGS=0,Tj=25 C VD=VG=0V,VS=1.2V Notes: 1.Pulse width ... | Original |
5 pages, |
FET MARKING QG 117M marking SMG2304 SMG2304 abstract |
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| Abstract: 250V RDS(on) = lD = 2.7A Absolute Maximum Ratings Parameter Max. Units Id @ Tc = 25°C Continuous Drain , Avalanche Energy © 3.6 mJ dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns Tj, Tstg Junction and Storage , Gate Charge - - 8.2 nC Id=2.7A VDs=200V Vgs=10V See Fig. 6 and 13 © Qgs Gate-to-Source Charge - - 1.8 Qgd Gate-to-Drain ("Miller") Charge - - 4.5 td(on) Turn-On Delay Time - 7.0 - ns Vdd=125V Id=2.7A , Continuous Source Current 2.7 MOSFET symbol D (Body Diode) A showing the / PL ISM Pulsed Source ... | OCR Scan |
8 pages, |
smd marking 2t2 smd DIODE code marking Q DIODE PN junction diode IRF614S IRF614S abstract |
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| Abstract: 2.7A SMD-220 SMD-220 Absolute Maximum Ratings Parameter Max. Units ID® Tc = 25°C Continuous Drain Current , Avalanche Energy © 3.6 mJ dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns Tj, Tstg Junction and Storage , 8.2 nC Id=2.7A Vds=200V Vgs=10V See Fig. 6 and 13 ® Qgs Gate-to-Source Charge - - 1.8 Qgd Gate-to-Drain ("Miller") Charge - 4.5 td(on) Turn-On Delay Time - 7.0 - ns Vdd=125V Id=2.7A Rg=240 Rd=45H , Conditions Is Continuous Source Current (Body Diode) - - 2.7 MOSFET symbol showing the A I integral ... | OCR Scan |
6 pages, |
SMD-220 smd diode marking 325 IRF614S AN-994 100-C IRF614S abstract |
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| Abstract: Avalanche Current © 2.1 A Ear Repetitive Avalanche Energy © 2.3 mJ dv/dt Peak Diode Recovery dv/dt ® 2.0 V , Gate Charge - - 8.2 nC Id=2.7A Vds=200V Vgs=10V See Fig. 6 and 13 ® Qgs Gate-to-Source Charge - - 1.8 Q„d Gate-to-Drain ("Miller") Charge - - 4.5 td(on) Turn-On Delay Time - 7.0 - ns Vdd=125V Id=2.7A , Characteristics Parameter Min. Typ. Max. Units I Test Conditions Is Continuous Source Current (Body Diode) - - 2.1 A MOSFET symbol showing the A ¡7~£\ integral reverse B-U p y p-n junction diode. "Is Ism Pulsed ... | OCR Scan |
6 pages, |
IRFI614G IRFI614G abstract |
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| Abstract: FDH27N50 FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode , FDH27N50 FDH27N50 Rev. A2 FDH27N50 FDH27N50 August 2002 Device Marking FDH27N50 FDH27N50 Device FDH27N50 FDH27N50 Package , = 27A - 17 20 nC - 18 22 nC - 14 - ns - VDD = 250V ID = 27A RG = 4.3 RD = 9.3 54 - ns - - ns 54 - ns - 3550 - pF - , Single Pulse Avalanche Energy (Note 2) IAR Avalanche Current Drain-Source Diode Characteristics ... | Original |
6 pages, |
FDH27N50 marking 27A DIODE FDH27N50 abstract |
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| MOTOR CONTROL CIRCUITS RECTIFIER IN S.M.P.S. November 1994 DO 27 A (Plastic) Symbol Parameter Value Unit cycles. BYT 03-200 " 400 DO 27A (Plastic) PACKAGE MECHANICAL DATA Cooling method: by convection (method ST | FAST RECOVERY RECTIFIER DIODES BYT03-200 BYT03-200 BYT03-200 BYT03-200 BYT03-300 BYT03-300 BYT03-300 BYT03-300 FAST RECOVERY RECTIFIER DIODES Document Number: 3359 Date Update: 10/04/95 Pages: 5 Format BYT 03-200 " 400 FAST RECOVERY RECTIFIER DIODES VERY LOW REVERSE RECOVERY TIME VERY LOW www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3359-v2.htm |
STMicroelectronics | 14/06/1999 | 4.93 Kb | HTM | 3359-v2.htm |
| MOTOR CONTROL CIRCUITS RECTIFIER IN S.M.P.S. November 1994 DO 27 A (Plastic) Symbol Parameter Value Unit cycles. BYT 03-200 " 400 DO 27A (Plastic) PACKAGE MECHANICAL DATA Cooling method: by convection (method ST | FAST RECOVERY RECTIFIER DIODES BYT03-200 BYT03-200 BYT03-200 BYT03-200 BYT03-300 BYT03-300 BYT03-300 BYT03-300 FAST RECOVERY RECTIFIER DIODES Document Number: 3359 Date Update: 10/04/95 Pages: 5 Format BYT 03-200 " 400 FAST RECOVERY RECTIFIER DIODES VERY LOW REVERSE RECOVERY TIME VERY LOW www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3359-v1.htm |
STMicroelectronics | 02/04/1999 | 4.97 Kb | HTM | 3359-v1.htm |
| Datasheet HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS SM6HT24A SM6HT24A SM6HT24A SM6HT24A SM6HT27A .0 9.4 SM6HT27A EPB 2 5 23.1 25.7 27 28.4 1 37.5 16.0 9.6 SM6HT30A SM6HT30A SM6HT30A SM6HT30A ERB 2 5 25.6 28.5 30 31.5 1 41 ). 10 100 1E-1 1E+0 1E+1 1E+2 Ipp(A) tp=1ms SM6HT24A SM6HT24A SM6HT24A SM6HT24A SM6HT30A SM6HT30A SM6HT30A SM6HT30A SM6HT27A SM6HT36A SM6HT36A SM6HT36A SM6HT36A SM6HT39A SM6HT39A SM6HT39A SM6HT39A SM6 10 100 200 100 200 500 1000 C(pF) SM6HT24A SM6HT24A SM6HT24A SM6HT24A SM6HT30A SM6HT30A SM6HT30A SM6HT30A SM6HT27A SM6HT36A SM6HT36A SM6HT36A SM6HT36A SM6HT39A SM6HT39A SM6HT39A SM6HT39A SM6HT43A SM6HT43A SM6HT43A SM6HT43A soldering during 10 s. 260 5 C Note 1 : For a surge greater than the maximum values, the diode will www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6565.htm |
STMicroelectronics | 20/10/2000 | 8.86 Kb | HTM | 6565.htm |
| SM6HT27A SM6HT30A SM6HT30A SM6HT30A SM6HT30A SM6HT36A SM6HT36A SM6HT36A SM6HT36A SM6HT39A SM6HT39A SM6HT39A SM6HT39A SM6HT43A SM6HT43A SM6HT43A SM6HT43A Document Format Size 33.2 18.0 9.4 SM6HT27A EPB 2 5 23.1 25.7 27 28.4 1 37.5 16.0 9.6 SM6HT30A SM6HT30A SM6HT30A SM6HT30A ERB 2 5 25.6 28 1E+2 Ipp(A) tp=1ms SM6HT24A SM6HT24A SM6HT24A SM6HT24A SM6HT30A SM6HT30A SM6HT30A SM6HT30A SM6HT27A SM6HT36A SM6HT36A SM6HT36A SM6HT36A SM6HT39A SM6HT39A SM6HT39A SM6HT39A SM6HT43A SM6HT43A SM6HT43A SM6HT43A tp=20ms 100 200 500 1000 C(pF) SM6HT24A SM6HT24A SM6HT24A SM6HT24A SM6HT30A SM6HT30A SM6HT30A SM6HT30A SM6HT27A SM6HT36A SM6HT36A SM6HT36A SM6HT36A SM6HT39A SM6HT39A SM6HT39A SM6HT39A SM6HT43A SM6HT43A SM6HT43A SM6HT43A VR s. 260 5 C Note 1 : For a surge greater than the maximum values, the diode will fail in www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6565-v1.htm |
STMicroelectronics | 25/05/2000 | 8.44 Kb | HTM | 6565-v1.htm |
| ST | HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS SM6HT24A SM6HT24A SM6HT24A SM6HT24A SM6HT27A SM6HT30A SM6HT30A SM6HT30A SM6HT30A SM A 10 -4 /5C SM6HT24A SM6HT24A SM6HT24A SM6HT24A EMB 2 5 20.5 22.8 24 25.2 1 33.2 18.0 9.4 SM6HT27A EPB 2 5 23.1 25.7 27 28.4 1 +2 Ipp(A) tp=1ms SM6HT24A SM6HT24A SM6HT24A SM6HT24A SM6HT30A SM6HT30A SM6HT30A SM6HT30A SM6HT27A SM6HT36A SM6HT36A SM6HT36A SM6HT36A SM6HT39A SM6HT39A SM6HT39A SM6HT39A SM6HT43A SM6HT43A SM6HT43A SM6HT43A tp=20ms Vcl(V) Fig. 3 24A SM6HT30A SM6HT30A SM6HT30A SM6HT30A SM6HT27A SM6HT36A SM6HT36A SM6HT36A SM6HT36A SM6HT39A SM6HT39A SM6HT39A SM6HT39A SM6HT43A SM6HT43A SM6HT43A SM6HT43A VR(V) F=1MHz Fig. 4: Junction capacitance versus surge greater than the maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM RATINGS www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6565-v2.htm |
STMicroelectronics | 14/06/1999 | 6.55 Kb | HTM | 6565-v2.htm |
| 18CA SM6T200A SM6T200A SM6T200A SM6T200A SM6T200CA SM6T200CA SM6T200CA SM6T200CA SM6T220A SM6T220A SM6T220A SM6T220A SM6T220CA SM6T220CA SM6T220CA SM6T220CA SM6T22A SM6T22A SM6T22A SM6T22A SM6T22CA SM6T22CA SM6T22CA SM6T22CA SM6T24A SM6T24A SM6T24A SM6T24A SM6T24CA SM6T24CA SM6T24CA SM6T24CA SM6T27A SM6T27CA SM6T27CA SM6T27CA SM6T27CA SM6T30A SM6T30A SM6T30A SM6T30A 6T24A 6T24A 6T24A 6T24A EM SM6T24CA SM6T24CA SM6T24CA SM6T24CA MM 1 20.5 22.8 24 25.2 1 33.2 18 42.8 93 9.4 1250 SM6T27A EP SM6T27CA SM6T27CA SM6T27CA SM6T27CA MP 1 23 soldering during 10 s. 260 5 C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM RATINGS (T amb = 255C) DESCRIPTION Transil diodes No suffix : Unidirectional SURFACE MOUNT BREAKDOWN VOLTAGE MARKING : Logo, Date Code, Type Code www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3082.htm |
STMicroelectronics | 20/10/2000 | 9.78 Kb | HTM | 3082.htm |
| 24CA SM6T27A SM6T27CA SM6T27CA SM6T27CA SM6T27CA SM6T30A SM6T30A SM6T30A SM6T30A SM6T30CA SM6T30CA SM6T30CA SM6T30CA SM6T33A SM6T33A SM6T33A SM6T33A SM6T33CA SM6T33CA SM6T33CA SM6T33CA SM6T36A SM6T36A SM6T36A SM6T36A SM6T36CA SM6T36CA SM6T36CA SM6T36CA SM6T39A SM6T39A SM6T39A SM6T39A SM6T39CA SM6T39CA SM6T39CA SM6T39CA SM6T68A SM6T68A SM6T68A SM6T68A SM6 .6 20 39.3 102 9.2 1350 SM6T24A SM6T24A SM6T24A SM6T24A EM SM6T24CA SM6T24CA SM6T24CA SM6T24CA MM 1 20.5 22.8 24 25.2 1 33.2 18 42.8 93 9.4 1250 SM6T27A EP : For a surge greater than the maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM RATINGS (T amb = 255C) DESCRIPTION Transil diodes provide high overvoltage protection by clamping action suffix : Unidirectional SURFACE MOUNT BREAKDOWN VOLTAGE MARKING : Logo, Date Code, Type Code, Cathode www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3082-v2.htm |
STMicroelectronics | 14/06/1999 | 7.25 Kb | HTM | 3082-v2.htm |
| 27A SM15T27CA SM15T27CA SM15T27CA SM15T27CA SM15T30A SM15T30A SM15T30A SM15T30A SM15T30CA SM15T30CA SM15T30CA SM15T30CA SM15T33A SM15T33A SM15T33A SM15T33A SM15T33CA SM15T33CA SM15T33CA SM15T33CA SM15T36A SM15T36A SM15T36A SM15T36A SM15T36CA SM15T36CA SM15T36CA SM15T36CA SM15T39A SM15T39A SM15T39A SM15T39A SM15T39CA SM15T39CA SM15T39CA SM15T39CA SM15T68A SM15T68A SM15T68A SM15T68A SM 15T24A 15T24A 15T24A 15T24A MEM SM15T24CA SM15T24CA SM15T24CA SM15T24CA BEM 5 20.5 22.8 24 25.2 1 33.2 45 42.8 234 9.4 3500 SM15T27A MEP SM15T27CA SM15T27CA SM15T27CA SM15T27CA maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM RATINGS (T amb = 255C) DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous C A Weight = 0.25 g. BIDIRECTIONAL SURFACE MOUNT BREAKDOWN VOLTAGE MARKING : Logo, Date www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3080.htm |
STMicroelectronics | 20/10/2000 | 9.88 Kb | HTM | 3080.htm |
| T24A SM15T24CA SM15T24CA SM15T24CA SM15T24CA SM15T27A SM15T27CA SM15T27CA SM15T27CA SM15T27CA SM15T30A SM15T30A SM15T30A SM15T30A SM15T30CA SM15T30CA SM15T30CA SM15T30CA SM15T33A SM15T33A SM15T33A SM15T33A SM15T33CA SM15T33CA SM15T33CA SM15T33CA SM15T36A SM15T36A SM15T36A SM15T36A SM15T36CA SM15T36CA SM15T36CA SM15T36CA SM15T39A SM15T39A SM15T39A SM15T39A SM15T24CA SM15T24CA SM15T24CA SM15T24CA BEM 5 20.5 22.8 24 25.2 1 33.2 45 42.8 234 9.4 3500 SM15T27A MEP SM15T27CA SM15T27CA SM15T27CA SM15T27CA BEP 5 during 10 s. 260 5 C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM RATINGS (T amb = 255C) DESCRIPTION Transil diodes provide VOLTAGE MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). 1500 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3080-v3.htm |
STMicroelectronics | 25/05/2000 | 9.45 Kb | HTM | 3080-v3.htm |
| 24CA SM6T27A SM6T27CA SM6T27CA SM6T27CA SM6T27CA SM6T30A SM6T30A SM6T30A SM6T30A SM6T30CA SM6T30CA SM6T30CA SM6T30CA SM6T33A SM6T33A SM6T33A SM6T33A SM6T33CA SM6T33CA SM6T33CA SM6T33CA SM6T36A SM6T36A SM6T36A SM6T36A SM6T36CA SM6T36CA SM6T36CA SM6T36CA SM6T39A SM6T39A SM6T39A SM6T39A SM6T39CA SM6T39CA SM6T39CA SM6T39CA SM6T68A SM6T68A SM6T68A SM6T68A SM6 .6 20 39.3 102 9.2 1350 SM6T24A SM6T24A SM6T24A SM6T24A EM SM6T24CA SM6T24CA SM6T24CA SM6T24CA MM 1 20.5 22.8 24 25.2 1 33.2 18 42.8 93 9.4 1250 SM6T27A EP : For a surge greater than the maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM RATINGS (T amb = 255C) DESCRIPTION Transil diodes provide high overvoltage protection by clamping action suffix : Unidirectional SURFACE MOUNT BREAKDOWN VOLTAGE MARKING : Logo, Date Code, Type Code, Cathode www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3082-v1.htm |
STMicroelectronics | 02/04/1999 | 7.29 Kb | HTM | 3082-v1.htm |