500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
SN65LVCP408PAPR Texas Instruments 8x8 4.25Gbps Crosspoint Switch 64-HTQFP -40 to 85 visit Texas Instruments Buy
ISO7821LLDWWR Texas Instruments High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 visit Texas Instruments
SN65MLVD206BDR Texas Instruments High Noise Immunity 200Mbps M-LVDS Transceiver 8-SOIC -40 to 85 visit Texas Instruments Buy
ISO7821LLDWW Texas Instruments High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 visit Texas Instruments Buy
SN65LVCP408PAPT Texas Instruments 8x8 4.25Gbps Crosspoint Switch 64-HTQFP -40 to 85 visit Texas Instruments
SN65EPT23DR Texas Instruments 3.3V ECL Differential Receiver 8-SOIC -40 to 85 visit Texas Instruments Buy

m lc 945

Catalog Datasheet MFG & Type PDF Document Tags

m lc 945

Abstract: BDS945 ; note 1 (BDS943/945) 50 hFE DC current gain lc = 250 mA; VCE = 1 V; note 1 (BDS947) 40 fr , BDS943/945/947 NPN silicon epitaxial base power transistors DESCRIPTION NPN silicon epitaxial base , open base - 22 32 45 V V V lc collector current average value - 3 A ICM collector current peak value , DC h FE OC current gain lc = 10 mA; VCE = 5 V 25 - fi FE DC current gain lc = 500 mA; VCE = 1 V 85 475 UFE DC current gain BDS943 BDS945 BDS947 lc = 2 A; VCE = 1 V 50 50 40 - Top view 3 MSB002
-
OCR Scan
m lc 945 TI 945 945 npn 947 smd 0034T BDS943/945/947 BDS944/946/948 MBB012 53T31 MB8Q94 0034L3
Abstract: hFE DC current gain lc = 2 A; VCe = 1 V; note 1 (BDS943/945) 50 hFE DC current gain , April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 , gain lc = 10 mA; VCE = 5 V Hfe DC current gain lc = 500 mA; Vce = 1 V hFE DC , 3 7 A A 8 1.5 150 W W open emitter lc iCM MIN. - collector-base voltage , VCEO - cf o 1 m li > ll N > < VCBO - - °C Product specification Philips -
OCR Scan
BDS943/945 S3T31 USA03S

BDS945

Abstract: m lc 945 issue April 1991 5L.E T> m 711002b 0043172 2bl «PHIN BDS943/945/947 T-33-0? NPN silicon epitaxial , current gain lc = 2 A; Vce = 1 V; note 1 (BDS943/945) 50 hFE DC current gain lc = 250 mA; Vce=1 V; note , base - 22 32 45 V V V lc collector current average value - 3 A ICM collector current peak value - 7 A , DC current gain lc = 10 mA; VCE = 5 V 25 - hFE DC current gain lc = 500 mA; VCE = 1 V 85 475 h FE DC current gain BDS943 BDS945 BDS947 m II Il IO 50 50 40 - PINNING - SOT223 PIN DESCRIPTION 1
-
OCR Scan
J 3305 DDM317S MSBO02 T-33-05 7UQ65 0DM3177 D4317 MSA035

BDS945

Abstract: m lc 945 ; note 1 (BDS943/945) 50 hFE DC current gain lc = 250 mA; Vce = 1 V; note 1 (BDS947) 40 fr , BDS943/945/947 NPN silicon epitaxial base power transistors DESCRIPTION NPN silicon epitaxial base , open base - 22 32 45 V V V lc collector current average value - 3 A ICM collector current peak value , °C hpE DC current gain lc = 10 mA; VCE = 5 V 25 - UFE DC current gain lc = 500 mA; VCE = 1 V 85 , Components Product specification NPN silicon epitaxial base power transistors BDS943/945/947 LIMITING
-
OCR Scan

lc 945 p transistor

Abstract: transistor 2 FC 945 Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz · · Low noise figure High
-
OCR Scan
lc 945 p transistor transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184 S822T/S822TW S822T S822TW 88/540/EEC 91/690/EEC

lc 945 p transistor

Abstract: Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz 1 1 · · Low noise figure
-
OCR Scan
S852T/S852TW S852T S852TW

10TPB68MC

Abstract: 6TPB100MA Rated capacitance range120Hz/20 F 33 to 330 Capacitance tolerance 120Hz/20 M:±20 Rated , . 1.5 times the initial value L.C. 105,2000h, rated voltage applied) The initial value , D.F. 1.5 times the initial value L.C. applied) 3 times the initial value C/C Surge 105,1000 cycles, 1k,Surge Within±5 of the initial value D.F. The initial value L.C , TPC Series Characteristics list Rated Voltage V Rated Capacitance F D.F. %max. L.C. A
-
Original
10TPA33M 10TPB68MC 6TPB100MA 10TPB330M 10TPB33M 10TPC100M TPC Series 6TPC100M Z/Z20 6TPA47M 10TPA100M 6TPA150M 4TPA220M

6TPE150MAZB

Abstract: 4TPE220MAZB 12 - -55 105 120Hz/20 M : ±20 F 120Hz/20 47 330 120Hz/20 5 100kHz/20 tan LC T P E ESR 60 9095%RH 500 , tan 1.5 3 C/C ±5 tan LC 3 2.0 RV: 2.5 4.0 6.3 8.0 B2 B2 , TPC TPD C3 C3 220 330 10.0 B2 100 W TPSF 92 LC F TQC 1.5 RV TH ±20 tan L TA C/C LC 0.6 2.0
-
Original
2R5TPE330MAZB 2TPE330MIB 6TPE150MAZB 4TPE220MAZB 10TPE47MAZB 8TPE100MAZB 2R5TPE470M7 2TPE330MFB 2R5TPE220MDGB 2R5TPE330MFC2 000B2 2R5TPE680MCL

6TPE220MAP

Abstract: 6TPE220MAZB temperature range () - -55 to 105 () 120Hz/20 M : ±20 Rated capacitance range (F) 120Hz , TH TQC 92 DF Within the initial limit LC < F 3 times of the initial limit , initial limit LC 105, 1,000 cycles, 1k discharge resistance,surge voltage applied Rated temp 85 products: 85, 1,000 cycles Surge Technical data Fundamental structure C/C LC Marking , LC ESR DF voltage temperature capacitance voltage temperature A mmax ripple current Reflow
SANYO Electric
Original
6TPE220MAP 6TPE220MAZB 2R5TPE330M7 2TPE470M6 2R5TPE330M9C2 6TPE330MAP 4TPE680M 4TPE680MI 4TPE680MF 2R5TPE1000M 2R5TPE1000MI 2R5TPE1000MF

527H

Abstract: D 1413 transistor handling. T em ic S e m i c o n d u c t o r s A Applications For low-noise and high-gain , current consumption 50 Q input impedance at 945 MHz · Low noise figure · High power gain Marking: 822 , -2.08-Apr-97 T em ic S e m i c o n d u c t o r s S822T Min. Ices Icbo Iebo V|BRlCEO VCEsat hFE 40 6 0.1 90 , Geaditions Transition frequency VCE = 3 V, lc = 1 mA. f = 500 MHz VCE = 2 V, lc = 1.5 mA, f = 500 MHz , V, lc = 1.5 mA Zs = Zsopt, f = 450 MHz, VCE = 2 V, Ic = 0.5 mA Power gain VCE = 3 V. Ic = 1 mA, f =
-
OCR Scan
527H D 1413 transistor 1300M

6TPA47M

Abstract: 10TPA33M tan Tangent of loss angle tan 120Hz/20 2.5 to 10 2.5 to 10 0.08 0.10 5 LC Leakage current Rated voltage applied, after 5 minutes µA ESR Equivalent series resistance E.S.R. m , Impedance ratio 100kHz/20 68 to 220 M:±20% Rated voltage range V.DC Z/Z20 0.6 to 1.0 mA , value tan 1.51.5 times the initial standard LC The initial standard C/C 40 -20Within , to 95%RH, 500Hrs., No voltage applied Size mm TPC 1.51.5 times the initial standard LC
SANYO Electronic Components
Original
10TPB100M 6TPB150M 4TPB220M 2R5TPB330M 6TPC100M 4TPC150M TPA 1515 10TPC68M 100D3 1000H 1000D3

10TPB330M

Abstract: 6TPB470M 120Hz/20 M:±20 Rated voltage V.DC 2.5 to 16 8.0 or 10.0 or 15.0 Dissipation Factor D.F , ,rated voltage applied The initial value L.C. Wilthin50, -20 of the initial value 2R5TPB1000M , L.C. 3 times the initial value C/C Surge Within±5 of the initial value D.F. The initial value L.C. 105,1000 cycles,1k,surge voltage applied 3 times the initial value , list SANYO Part number Rated Voltage V Rated Capacitance F D.F. %max. L.C. A max
SANYO Capacitor Division
Original
4TPB680M 6TPB470M 16TPB47ML 10TPB100ML 6TPB330M 6TPB100MC 10TPB47MC 8TPB82MC 10TPB150ML 10TPB220ML

D468C

Abstract: 10TPB330M to 1000 F Capacitance tolerance 120Hz/20 M:±20 - 2.5 to 10.0 V.DC 120Hz/20 8.0 , limit L.C. Within50, -20 of the initial value 2R5TPB1000M C/C 60,90 to 95%RH,500h, No , 1.5 times the initial limit D.F. L.C. Within±5 of the initial value D.F. The initial limit L.C. 105,1000 cycles, 1kdischarge resistance, surge voltage applied Surge 3 times , Voltage V Rated Capacitance F D.F. %max. L.C. A max./5min. E.S.R. mmax. 100kHz/20
SANYO Electric
Original
6TPB330ML D468C 6TPB150MC D468 c6090 j30L 6TPB150ML 6TPB220ML 4TPB220ML 4TPB330ML 4TPB470ML

BD943

Abstract: Collector-emitter voltage (open base) Junction temperature D.C. current gain lc â' tO m A; V q e = 5 V Ti bFE lc « 5 0 0 m A ; V C E « 1 V hFE 25 hFE IC « > 2 A; V C E â' I V Transition frequency at f - 1 M H z lC *> 250 m A; V C E - 1 V 85 to 475 > 50 50 > 40 3 , current lC = 0 ; V E B - 5 V 'E B O < 0.2 mA D.C. current gain (note 1) lc = 10 m A; V q , T A BD943 Collector-base voltage (open emitter) 945 947 V CBO max. 22 32 45 V
-
OCR Scan
BD945 BD947 BD944 MSA060-1 D03MS3L 7H72SJ

D468C

Abstract: 6TPB100MC to 1000 F Capacitance tolerance 120Hz/20 M:±20 - 2.5 to 10.0 V.DC 120Hz/20 8.0 , limit L.C. Within50, -20 of the initial value 2R5TPB1000M C/C 60,90 to 95%RH,500h, No , 1.5 times the initial limit D.F. L.C. Within±5 of the initial value D.F. The initial limit L.C. 105,1000 cycles, 1kdischarge resistance, surge voltage applied Surge 3 times , Rated Rated Voltage D.F. Capacitance V %max. F Maximum MSL L.C. E.S.R. allowable Reflow
SANYO Capacitor Division
Original
2R5TPB680M 4TPB220MC Sanyo 6TPB330M D4 D482 6TPB150M sanyo 2R5TPB220MC 2R5TPB330ML 2R5TPB470ML 2R5TPB680ML 10TPB220M 4TPB470M
Abstract: 1.000 pF increase. y A /a fte r 2 m in u te s (max) Leakage c u rre n t (LC) Based the value at - , ripple c u rre n t(m A rm s) (1 0 5 0 /1 00kHz) 820 0 .0 5 9 945 8X 1 5 â˜1 1200 0 , a ted ripple curre nt(m A nm s) (1 051C/1 00kHz) 680 0 .0 5 9 945 â˜1 1000 0 , ) 16 13 120HZ/20TC 35 32 44 0 .1 4 0 .1 2 - 4 0 to + 1 0 5 M : +20 0 .1 9 , initial value (6.3V. 1OV : ± 3 0 % ) ta n s < 2 tim e s th e initial specified value LC 1050 -
OCR Scan
1051C 120HZ/201C 16X21 16X25 105TC 10X16

10THB220M

Abstract: 10THB330M - -55 125 120Hz/20 M : ±20 120Hz/20 F 12 2.9 7.2 2.9 4.6 7.2 68 , LC POSCAP 6.3 120Hz/20 tan T H 220 680 4.0 LC 2 C/C 40 -20 tan 1.5 LC 3 C/C ±5 tan LC 3 , 0.10 94.5 40 1900 5 4THC220M 4.0 105 220 2.5 125 0.10 88.0 , 105 150 4.0 125 0.10 94.5 25 2400 5 6THE150MI 6.3 105 150
-
Original
10THC68M 2R5THE330MF 6THC150M 6THD330M 2R5THD680M 10THB220M 10THB330M 6THB470M 6THB330M 4THE220M 4THE220MI 4THE220MF 2R5THE330M 2R5THE330MI

PM7540

Abstract: 2sc2275 /NPNXkf ^ + â¡ > h # m ¿11^60-120 W/fl'^-Tf/*) K7>f ' , -+ 150 55~ +150 â'¢C â'¢ PWS10 m*. duly eyck£50 % mmttfttë (Ta=25"C) H * ? fc # MIN. TYP. MAX. 3 v 9 9 L M % )% It'HI» V(;B=-120/120 V, Ir. = 0 -1.0/1.0 fiA J-l -y 9 l « m tt îfc 1KRO VKB=-3.0/3.0 V. lc=0 -1.0/1.0 uA Ã. ifc Tfc Jfî tel ^FEl VlT=-5.0/5.0 V, Ic=-5.0/5.0 mA ♦ 35 160/130 , A, IB=-0.1/0.1 A ♦ -0.9/0.9 -1.5/1.5 V W îîf flî tt « « fr VCB = -5.0/5.0 V, lc= 0.2/0.2 A
-
OCR Scan
2SA985 PM7540 2sc2275 2SA985 NEC TEA 7540 IC TEA-509 985/2SA9 2SC2275/2SC2275A
Abstract: "ƒ) â' â'55 to ï¼'125 (ï¼) 120Hz/20â"ƒ M : ±20 Rated capacitance range (μF) 120Hz , â³C/C DF < ー LC ー < â³C/C < ー LC < ー 3 times of the initial limit â³C/C Within±5% of the initial value DF Within the initial limit LC < ã , D2 H THE 330 THE S 470 W1 94.5 40 1900 ̶ 5 4THC220M 4.0 , 10.0 55.0 45 1700 ̶ 5 6.3 105 150 4.0 125 10.0 94.5 25 2400 Panasonic
Original
4THB330ML

476 0J capacitor

Abstract: 0 3 J 4 4 7 4 6 M 5 8 R 6 E 7 Series name TCO Nominal capacitance , number of 0's. 2 Case style B : 3528-21 (1411) size 5 Capacitance tolerance M : ± 20% 3 , 35 45 70 100 150 ESR (m) CODE EE EN ES EW EB EC This specification has possibility of charge , Datasheet (ESR : m) Capacitance (F) 4.7 (475) 6.8 (685) 10 (106) 15 (156) 22 (226) 33 (336) 47 (476 , Standard list " Appearance There should be no significant abnormality. The indications should be clear. L.C
ROHM
Original
476 0J capacitor R1102A
Showing first 20 results.