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m lc 945

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ; note 1 (BDS943/945) 50 hFE DC current gain lc = 250 mA; VCE = 1 V; note 1 (BDS947 BDS947) 40 fr , BDS943/945/947 NPN silicon epitaxial base power transistors DESCRIPTION NPN silicon epitaxial base , open base - 22 32 45 V V V lc collector current average value - 3 A ICM collector current peak value , DC h FE OC current gain lc = 10 mA; VCE = 5 V 25 - fi FE DC current gain lc = 500 mA; VCE = 1 V 85 475 UFE DC current gain BDS943 BDS943 BDS945 BDS945 BDS947 BDS947 lc = 2 A; VCE = 1 V 50 50 40 - Top view 3 MSB002 MSB002 ... OCR Scan
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7 pages,
161.74 Kb

BDS947 BDS943 947 smd 0034T 945 npn TI 945 BDS945 m lc 945 BDS943/945/947 TEXT
datasheet frame
Abstract: hFE DC current gain lc = 2 A; VCe = 1 V; note 1 (BDS943/945) 50 hFE DC current gain , April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 , gain lc = 10 mA; VCE = 5 V Hfe DC current gain lc = 500 mA; Vce = 1 V hFE DC , 3 7 A A 8 1.5 150 W W open emitter lc iCM MIN. - collector-base voltage , VCEO - cf o 1 m li > ll N > < VCBO - - °C Product specification Philips ... OCR Scan
datasheet

7 pages,
214.77 Kb

TEXT
datasheet frame
Abstract: issue April 1991 5L.E T> m 711002b 0043172 2bl «PHIN BDS943/945/947 T-33-0 T-33-0? NPN silicon epitaxial , current gain lc = 2 A; Vce = 1 V; note 1 (BDS943/945) 50 hFE DC current gain lc = 250 mA; Vce=1 V; note , base - 22 32 45 V V V lc collector current average value - 3 A ICM collector current peak value - 7 A , DC current gain lc = 10 mA; VCE = 5 V 25 - hFE DC current gain lc = 500 mA; VCE = 1 V 85 475 h FE DC current gain BDS943 BDS943 BDS945 BDS945 BDS947 BDS947 m II Il IO 50 50 40 - PINNING - SOT223 PIN DESCRIPTION 1 ... OCR Scan
datasheet

7 pages,
166.69 Kb

DDM317S BDS947 BDS943 J 3305 m lc 945 BDS945 TEXT
datasheet frame
Abstract: ; note 1 (BDS943/945) 50 hFE DC current gain lc = 250 mA; Vce = 1 V; note 1 (BDS947 BDS947) 40 fr , BDS943/945/947 NPN silicon epitaxial base power transistors DESCRIPTION NPN silicon epitaxial base , open base - 22 32 45 V V V lc collector current average value - 3 A ICM collector current peak value , °C hpE DC current gain lc = 10 mA; VCE = 5 V 25 - UFE DC current gain lc = 500 mA; VCE = 1 V 85 , Components Product specification NPN silicon epitaxial base power transistors BDS943/945/947 LIMITING ... OCR Scan
datasheet

7 pages,
161.76 Kb

BDS947 BDS943 947 smd 945 npn m lc 945 BDS945 BDS943/945/947 TEXT
datasheet frame
Abstract: Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz · · Low noise figure High ... OCR Scan
datasheet

7 pages,
254.79 Kb

VISHAY MARKING SJ transistor CB 945 lc 945 p transistor 2 FC 945 lc 945 p transistor S822T/S822TW TEXT
datasheet frame
Abstract: Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz 1 1 · · Low noise figure ... OCR Scan
datasheet

7 pages,
252.77 Kb

lc 945 p transistor S852T/S852TW TEXT
datasheet frame
Abstract: Rated capacitance range120Hz/20 F 33 to 330 Capacitance tolerance 120Hz/20 M:±20 Rated , . 1.5 times the initial value L.C. 105,2000h, rated voltage applied) The initial value , D.F. 1.5 times the initial value L.C. applied) 3 times the initial value C/C Surge 105,1000 cycles, 1k,Surge Within±5 of the initial value D.F. The initial value L.C , TPC Series Characteristics list Rated Voltage V Rated Capacitance F D.F. %max. L.C. A ... Original
datasheet

6 pages,
166.24 Kb

4TPB100M 4TPC100M 4TPC56M 16TPC33M 10TPC68M 2R5TPC82M 2r5tpc330 2R5TPC330M 10TPB220ML 4TPC220M 6TPB100MC 4TPB680M 6TPB330ML 8TPB47M 10TPC100M TPC Series 6TPC100M 10TPB33M 10TPB330M 6TPB100MA 10TPB68MC TEXT
datasheet frame
Abstract: 12 - -55 105 120Hz/20 M : ±20 F 120Hz/20 47 330 120Hz/20 5 100kHz/20 tan LC T P E ESR 60 9095%RH 500 , tan 1.5 3 C/C ±5 tan LC 3 2.0 RV: 2.5 4.0 6.3 8.0 B2 B2 , TPC TPD C3 C3 220 330 10.0 B2 100 W TPSF 92 LC F TQC 1.5 RV TH ±20 tan L TA C/C LC 0.6 2.0 ... Original
datasheet

4 pages,
674.71 Kb

2TPE330MIB 2R5TPE330M7 6TPE220MIC 6TPE220MAZB 2TPE470M7 6TPE330MAP 6TPE330MFL 2TPE470M6 6TPE100MAZB 2TPE330M6 2R5TPE220MFGB 2R5TPE330MAZB 6TPE100MZB 6TPE100MPB 2TPE330MFB 2R5TPE470M7 8TPE100MAZB 10TPE47MAZB 4TPE220MAZB 6TPE150MAZB TEXT
datasheet frame
Abstract: temperature range () - -55 to 105 () 120Hz/20 M : ±20 Rated capacitance range (F) 120Hz , TH TQC 92 DF Within the initial limit LC < F 3 times of the initial limit , initial limit LC 105, 1,000 cycles, 1k discharge resistance,surge voltage applied Rated temp 85 products: 85, 1,000 cycles Surge Technical data Fundamental structure C/C LC Marking , LC ESR DF voltage temperature capacitance voltage temperature A mmax ripple current Reflow ... SANYO Electric
Original
datasheet

4 pages,
272.79 Kb

8TPE100MAZB 2r5tpe220mlb 2TPE330MFB 6TPE100MZB 2TPE330M6 220 tantalum 6TPE220MIC 6TPE100MPB 6TPE100MAZB 6TPE330MAP 2R5TPE330M9C2 6TPE150MAZB 4TPE220MAZB 2TPE470M6 2R5TPE330MAZB 2R5TPE330M7 10TPE47MAZB 2R5TPE470M7 6TPE220MAZB 6TPE220MAP TEXT
datasheet frame
Abstract: handling. T em ic S e m i c o n d u c t o r s A Applications For low-noise and high-gain , current consumption 50 Q input impedance at 945 MHz · Low noise figure · High power gain Marking: 822 , -2.08-Apr-97 T em ic S e m i c o n d u c t o r s S822T S822T Min. Ices Icbo Iebo V|BRlCEO VCEsat hFE 40 6 0.1 90 , Geaditions Transition frequency VCE = 3 V, lc = 1 mA. f = 500 MHz VCE = 2 V, lc = 1.5 mA, f = 500 MHz , V, lc = 1.5 mA Zs = Zsopt, f = 450 MHz, VCE = 2 V, Ic = 0.5 mA Power gain VCE = 3 V. Ic = 1 mA, f = ... OCR Scan
datasheet

6 pages,
186.78 Kb

D 1413 transistor S822T TEXT
datasheet frame

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Ext. Case Gnd Not Used lc 10 5 3 1 0.381 .050 1.270 .060 1.524 .030 0.762 K L M N P Q R Mid-Band Total Range L M U L M U 800-1000 DC-200 DC-200 800.000 830.000 9.45 8.28 7.78 830.000 23.16 24.17 23.49 18.34
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