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SN65LVDS33MDREPR Texas Instruments IC LINE RECEIVER, PDSO16, GREEN, PLASTIC, SOIC-16, Line Driver or Receiver visit Texas Instruments
SN55LVDS32FK Texas Instruments QUAD LINE RECEIVER, CQCC20, CERAMIC, LCC-20 visit Texas Instruments
SN65LVDS31ID Texas Instruments QUAD LINE TRANSCEIVER, PDSO16 visit Texas Instruments
SN75LVDS82CDGG Texas Instruments LINE RECEIVER, PDSO56 visit Texas Instruments
SN75LVDS9637DGK Texas Instruments DUAL LINE RECEIVER, PDSO8, PLASTIC, SO-8 visit Texas Instruments
DS90CR482VSX/NOPB Texas Instruments 48-Bit LVDS Channel Link Deserializer - 65 - 112 MHz 100-TQFP -10 to 70 visit Texas Instruments

m lc 945

Catalog Datasheet MFG & Type PDF Document Tags

m lc 945

Abstract: BDS945 ; note 1 (BDS943/945) 50 hFE DC current gain lc = 250 mA; VCE = 1 V; note 1 (BDS947) 40 fr , BDS943/945/947 NPN silicon epitaxial base power transistors DESCRIPTION NPN silicon epitaxial base , open base - 22 32 45 V V V lc collector current average value - 3 A ICM collector current peak value , DC h FE OC current gain lc = 10 mA; VCE = 5 V 25 - fi FE DC current gain lc = 500 mA; VCE = 1 V 85 475 UFE DC current gain BDS943 BDS945 BDS947 lc = 2 A; VCE = 1 V 50 50 40 - Top view 3 MSB002
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m lc 945 TI 945 945 npn 947 smd 0034T BDS943/945/947 BDS944/946/948 MBB012 53T31 MB8Q94 0034L3
Abstract: hFE DC current gain lc = 2 A; VCe = 1 V; note 1 (BDS943/945) 50 hFE DC current gain , April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 , gain lc = 10 mA; VCE = 5 V Hfe DC current gain lc = 500 mA; Vce = 1 V hFE DC , 3 7 A A 8 1.5 150 W W open emitter lc iCM MIN. - collector-base voltage , VCEO - cf o 1 m li > ll N > < VCBO - - °C Product specification Philips -
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BDS943/945 S3T31 USA03S

BDS945

Abstract: m lc 945 issue April 1991 5L.E T> m 711002b 0043172 2bl «PHIN BDS943/945/947 T-33-0? NPN silicon epitaxial , current gain lc = 2 A; Vce = 1 V; note 1 (BDS943/945) 50 hFE DC current gain lc = 250 mA; Vce=1 V; note , base - 22 32 45 V V V lc collector current average value - 3 A ICM collector current peak value - 7 A , DC current gain lc = 10 mA; VCE = 5 V 25 - hFE DC current gain lc = 500 mA; VCE = 1 V 85 475 h FE DC current gain BDS943 BDS945 BDS947 m II Il IO 50 50 40 - PINNING - SOT223 PIN DESCRIPTION 1
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J 3305 DDM317S MSBO02 T-33-05 7UQ65 0DM3177 D4317 MSA035

BDS945

Abstract: m lc 945 ; note 1 (BDS943/945) 50 hFE DC current gain lc = 250 mA; Vce = 1 V; note 1 (BDS947) 40 fr , BDS943/945/947 NPN silicon epitaxial base power transistors DESCRIPTION NPN silicon epitaxial base , open base - 22 32 45 V V V lc collector current average value - 3 A ICM collector current peak value , °C hpE DC current gain lc = 10 mA; VCE = 5 V 25 - UFE DC current gain lc = 500 mA; VCE = 1 V 85 , Components Product specification NPN silicon epitaxial base power transistors BDS943/945/947 LIMITING
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lc 945 p transistor

Abstract: transistor 2 FC 945 Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz · · Low noise figure High
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lc 945 p transistor transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184 S822T/S822TW S822T S822TW 88/540/EEC 91/690/EEC

lc 945 p transistor

Abstract: Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz 1 1 · · Low noise figure
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S852T/S852TW S852T S852TW

10TPB68MC

Abstract: 6TPB100MA Rated capacitance range120Hz/20 F 33 to 330 Capacitance tolerance 120Hz/20 M:±20 Rated , . 1.5 times the initial value L.C. 105,2000h, rated voltage applied) The initial value , D.F. 1.5 times the initial value L.C. applied) 3 times the initial value C/C Surge 105,1000 cycles, 1k,Surge Within±5 of the initial value D.F. The initial value L.C , TPC Series Characteristics list Rated Voltage V Rated Capacitance F D.F. %max. L.C. A
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10TPA33M 10TPB68MC 6TPB100MA 10TPB330M 10TPB33M 10TPC100M TPC Series 6TPC100M Z/Z20 6TPA47M 10TPA100M 6TPA150M 4TPA220M

6TPE150MAZB

Abstract: 4TPE220MAZB 12 - -55 105 120Hz/20 M : ±20 F 120Hz/20 47 330 120Hz/20 5 100kHz/20 tan LC T P E ESR 60 9095%RH 500 , tan 1.5 3 C/C ±5 tan LC 3 2.0 RV: 2.5 4.0 6.3 8.0 B2 B2 , TPC TPD C3 C3 220 330 10.0 B2 100 W TPSF 92 LC F TQC 1.5 RV TH ±20 tan L TA C/C LC 0.6 2.0
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2R5TPE330MAZB 2TPE330MIB 6TPE150MAZB 4TPE220MAZB 10TPE47MAZB 8TPE100MAZB 2R5TPE470M7 2TPE330MFB 2R5TPE220MDGB 2R5TPE330MFC2 000B2 2R5TPE680MCL

6TPE220MAP

Abstract: 6TPE220MAZB temperature range () - -55 to 105 () 120Hz/20 M : ±20 Rated capacitance range (F) 120Hz , TH TQC 92 DF Within the initial limit LC < F 3 times of the initial limit , initial limit LC 105, 1,000 cycles, 1k discharge resistance,surge voltage applied Rated temp 85 products: 85, 1,000 cycles Surge Technical data Fundamental structure C/C LC Marking , LC ESR DF voltage temperature capacitance voltage temperature A mmax ripple current Reflow
SANYO Electric
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6TPE220MAP 6TPE220MAZB 2R5TPE330M7 2TPE470M6 2R5TPE330M9C2 6TPE330MAP 4TPE680M 4TPE680MI 4TPE680MF 2R5TPE1000M 2R5TPE1000MI 2R5TPE1000MF

527H

Abstract: D 1413 transistor handling. T em ic S e m i c o n d u c t o r s A Applications For low-noise and high-gain , current consumption 50 Q input impedance at 945 MHz · Low noise figure · High power gain Marking: 822 , -2.08-Apr-97 T em ic S e m i c o n d u c t o r s S822T Min. Ices Icbo Iebo V|BRlCEO VCEsat hFE 40 6 0.1 90 , Geaditions Transition frequency VCE = 3 V, lc = 1 mA. f = 500 MHz VCE = 2 V, lc = 1.5 mA, f = 500 MHz , V, lc = 1.5 mA Zs = Zsopt, f = 450 MHz, VCE = 2 V, Ic = 0.5 mA Power gain VCE = 3 V. Ic = 1 mA, f =
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527H D 1413 transistor 1300M

6TPA47M

Abstract: 10TPA33M tan Tangent of loss angle tan 120Hz/20 2.5 to 10 2.5 to 10 0.08 0.10 5 LC Leakage current Rated voltage applied, after 5 minutes µA ESR Equivalent series resistance E.S.R. m , Impedance ratio 100kHz/20 68 to 220 M:±20% Rated voltage range V.DC Z/Z20 0.6 to 1.0 mA , value tan 1.51.5 times the initial standard LC The initial standard C/C 40 -20Within , to 95%RH, 500Hrs., No voltage applied Size mm TPC 1.51.5 times the initial standard LC
SANYO Electronic Components
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10TPB100M 6TPB150M 4TPB220M 2R5TPB330M 6TPC100M 4TPC150M TPA 1515 10TPC68M 100D3 1000H 1000D3

10TPB330M

Abstract: 6TPB470M 120Hz/20 M:±20 Rated voltage V.DC 2.5 to 16 8.0 or 10.0 or 15.0 Dissipation Factor D.F , ,rated voltage applied The initial value L.C. Wilthin50, -20 of the initial value 2R5TPB1000M , L.C. 3 times the initial value C/C Surge Within±5 of the initial value D.F. The initial value L.C. 105,1000 cycles,1k,surge voltage applied 3 times the initial value , list SANYO Part number Rated Voltage V Rated Capacitance F D.F. %max. L.C. A max
SANYO Capacitor Division
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4TPB680M 6TPB470M 16TPB47ML 10TPB100ML 6TPB330M 6TPB100MC 10TPB47MC 8TPB82MC 10TPB150ML 10TPB220ML

D468C

Abstract: 10TPB330M to 1000 F Capacitance tolerance 120Hz/20 M:±20 - 2.5 to 10.0 V.DC 120Hz/20 8.0 , limit L.C. Within50, -20 of the initial value 2R5TPB1000M C/C 60,90 to 95%RH,500h, No , 1.5 times the initial limit D.F. L.C. Within±5 of the initial value D.F. The initial limit L.C. 105,1000 cycles, 1kdischarge resistance, surge voltage applied Surge 3 times , Voltage V Rated Capacitance F D.F. %max. L.C. A max./5min. E.S.R. mmax. 100kHz/20
SANYO Electric
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6TPB330ML D468C 6TPB150MC D468 c6090 j30L 6TPB150ML 6TPB220ML 4TPB220ML 4TPB330ML 4TPB470ML

BD943

Abstract: Collector-emitter voltage (open base) Junction temperature D.C. current gain lc â' tO m A; V q e = 5 V Ti bFE lc « 5 0 0 m A ; V C E « 1 V hFE 25 hFE IC « > 2 A; V C E â' I V Transition frequency at f - 1 M H z lC *> 250 m A; V C E - 1 V 85 to 475 > 50 50 > 40 3 , current lC = 0 ; V E B - 5 V 'E B O < 0.2 mA D.C. current gain (note 1) lc = 10 m A; V q , T A BD943 Collector-base voltage (open emitter) 945 947 V CBO max. 22 32 45 V
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BD945 BD947 BD944 MSA060-1 D03MS3L 7H72SJ

D468C

Abstract: 6TPB100MC to 1000 F Capacitance tolerance 120Hz/20 M:±20 - 2.5 to 10.0 V.DC 120Hz/20 8.0 , limit L.C. Within50, -20 of the initial value 2R5TPB1000M C/C 60,90 to 95%RH,500h, No , 1.5 times the initial limit D.F. L.C. Within±5 of the initial value D.F. The initial limit L.C. 105,1000 cycles, 1kdischarge resistance, surge voltage applied Surge 3 times , Rated Rated Voltage D.F. Capacitance V %max. F Maximum MSL L.C. E.S.R. allowable Reflow
SANYO Capacitor Division
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2R5TPB680M 4TPB220MC Sanyo 6TPB330M D4 D482 6TPB150M sanyo 2R5TPB220MC 2R5TPB330ML 2R5TPB470ML 2R5TPB680ML 10TPB220M 4TPB470M
Abstract: 1.000 pF increase. y A /a fte r 2 m in u te s (max) Leakage c u rre n t (LC) Based the value at - , ripple c u rre n t(m A rm s) (1 0 5 0 /1 00kHz) 820 0 .0 5 9 945 8X 1 5 â˜1 1200 0 , a ted ripple curre nt(m A nm s) (1 051C/1 00kHz) 680 0 .0 5 9 945 â˜1 1000 0 , ) 16 13 120HZ/20TC 35 32 44 0 .1 4 0 .1 2 - 4 0 to + 1 0 5 M : +20 0 .1 9 , initial value (6.3V. 1OV : ± 3 0 % ) ta n s < 2 tim e s th e initial specified value LC 1050 -
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1051C 120HZ/201C 16X21 16X25 105TC 10X16

10THB220M

Abstract: 10THB330M - -55 125 120Hz/20 M : ±20 120Hz/20 F 12 2.9 7.2 2.9 4.6 7.2 68 , LC POSCAP 6.3 120Hz/20 tan T H 220 680 4.0 LC 2 C/C 40 -20 tan 1.5 LC 3 C/C ±5 tan LC 3 , 0.10 94.5 40 1900 5 4THC220M 4.0 105 220 2.5 125 0.10 88.0 , 105 150 4.0 125 0.10 94.5 25 2400 5 6THE150MI 6.3 105 150
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10THC68M 2R5THE330MF 6THC150M 6THD330M 2R5THD680M 10THB220M 10THB330M 6THB470M 6THB330M 4THE220M 4THE220MI 4THE220MF 2R5THE330M 2R5THE330MI

PM7540

Abstract: 2sc2275 /NPNXkf ^ + â¡ > h # m ¿11^60-120 W/fl'^-Tf/*) K7>f ' , -+ 150 55~ +150 â'¢C â'¢ PWS10 m*. duly eyck£50 % mmttfttë (Ta=25"C) H * ? fc # MIN. TYP. MAX. 3 v 9 9 L M % )% It'HI» V(;B=-120/120 V, Ir. = 0 -1.0/1.0 fiA J-l -y 9 l « m tt îfc 1KRO VKB=-3.0/3.0 V. lc=0 -1.0/1.0 uA Ã. ifc Tfc Jfî tel ^FEl VlT=-5.0/5.0 V, Ic=-5.0/5.0 mA ♦ 35 160/130 , A, IB=-0.1/0.1 A ♦ -0.9/0.9 -1.5/1.5 V W îîf flî tt « « fr VCB = -5.0/5.0 V, lc= 0.2/0.2 A
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2SA985 PM7540 2sc2275 2SA985 NEC TEA 7540 IC TEA-509 985/2SA9 2SC2275/2SC2275A
Abstract: "ƒ) â' â'55 to ï¼'125 (ï¼) 120Hz/20â"ƒ M : ±20 Rated capacitance range (μF) 120Hz , â³C/C DF < ー LC ー < â³C/C < ー LC < ー 3 times of the initial limit â³C/C Within±5% of the initial value DF Within the initial limit LC < ã , D2 H THE 330 THE S 470 W1 94.5 40 1900 ̶ 5 4THC220M 4.0 , 10.0 55.0 45 1700 ̶ 5 6.3 105 150 4.0 125 10.0 94.5 25 2400 Panasonic
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4THB330ML

476 0J capacitor

Abstract: 0 3 J 4 4 7 4 6 M 5 8 R 6 E 7 Series name TCO Nominal capacitance , number of 0's. 2 Case style B : 3528-21 (1411) size 5 Capacitance tolerance M : ± 20% 3 , 35 45 70 100 150 ESR (m) CODE EE EN ES EW EB EC This specification has possibility of charge , Datasheet (ESR : m) Capacitance (F) 4.7 (475) 6.8 (685) 10 (106) 15 (156) 22 (226) 33 (336) 47 (476 , Standard list " Appearance There should be no significant abnormality. The indications should be clear. L.C
ROHM
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476 0J capacitor R1102A
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