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lpddr2 spec

Catalog Datasheet Type PDF Document Tags
Abstract: Semiconductor, Inc. 1/? Agenda Industry Trends: IT & Mobile LPDDR2 Effect on Battery Life DDR3 , Industry Trends: IT & Mobile LPDDR2 Effect on Battery Life DDR3 Effect on Energy Saving SSD Effect on , LPDDR2 Effect on Battery Life DDR3 Effect on Energy Saving SSD Effect on Efficiency Virtualization , Memory Bandwidth Wide I/O 12.8GB/s 9.6GB/s LPDDR2 2ch. Serial IO 6.4GB/s LPDDR2 3.2GB/s , Multi Screen `13 `14 Green LPDDR2 Introduction · From Low-density MDDR to higher density LPDDR2 ... Original
datasheet

53 pages,
5818.19 Kb

samsung ddr2 nand lpddr2 ddr3 power lpddr lp-ddr2 mobile lpddr2 samsung SSD samsung toggle ddr2 NAND Samsung 128Gb Nand flash samsung ddr3 samsung lpddr2 Mobile RAM DDR3L lpddr2 lpddr2 samsung lpddr1 datasheet abstract
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Abstract: BGA (LPDDR, x16) K = 90-Ball BGA (LPSDR, x32) C = 90-Ball BGA (LPDDR, x32) A = 79-Ball BGA (LPDDR2, x16) I = 134-Ball BGA (LPDDR2, x32) Q = 168-Ball PoP-VFBGA (LPDDR2) R = 216-Ball PoP-VFBGA (LPDDR2) 3 = 240-Ball PoP-VFBGA (LPDDR2) 5= 220-Ball PoP-VFBGA (LPDDR2) 0 = Wafer (KGD) 5 REV 1.0 03 , VDD2 VSS LPDDR2 DQ 3 N/C VDD1 4 N/C N/C 5 N/C N/C 6 N/C N/C 7 N/C N/C 8 N/C N/C 9 , VSSQ DQ30 DQ29 VSSQ DQ26 DQS3_c VDD1 VDDQ DM3 VDD2 DQ31 VDDQ DQ28 DQ27 VDDQ DQ24 DQS3_t LPDDR2 ... Original
datasheet

140 pages,
3075.23 Kb

LPDDR2 2Gb Memory LPDDR2 PoP lpddr2 samsung ELPIDA LPDDR2 POP 216-ball LPDDR2 HSUL-12 lpddr2 DQ calibration lpddr2 256mb lpddr2 samsung lpddr2 se 094 lpddr2 spec HYNIX lpddr2 spec NT6TL16M32AQ/ NT6TL32M16AQ NT6TL16M32AQ/ abstract
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Abstract: are supported. I Part No. Category Density I/O Vddl / Vdd2 / Vddq Spec Status» RoHS I W978F6A W978F6A LPDDR2 256Mb X16 1.8V/-/1.2V 200MHz UD (Q3/-I0) Y W978H6A W978H6A LPDDR2 256Mb X16 1.8V/1.2V/1.2V 200MHz UD Y * Status , speed, smaller die size, and DRAM compatible process. Part No. Category Density I/O Vdd/Vddq Spec {Async , /Vddq Spec Status* RoHS I W948D6F W948D6F LPDDR 256Mb X16 1.8V/ 1.8V 200MHz S P(Q1/'10) Y W948D2F W948D2F LPDDR 256Mb , Accountability, Innovation, Teamwork winband We Deliver Low Power DDR2 SDRAM » Mobile LPDDR2 (Low Power Double ... OCR Scan
datasheet

24 pages,
12285.06 Kb

W25X64V w25q128bv 8x6mm winbond* W25Q winbond w25q w25X20BV LPDDR2 1Gb Memory lpddr2 256mb lpddr2 spec W25X80AV W25X20BL W641GG2IB 208-MIL W25X16AV datasheet abstract
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Abstract: ) C = 90-Ball BGA (LPDDR, x32) A = 79-Ball BGA (LPDDR2, x16) I = 134-Ball BGA (LPDDR2, x32) Q = 168-Ball PoP-VFBGA (LPDDR2) R = 216-Ball PoP-VFBGA (LPDDR2) 3 = 240-Ball PoP-VFBGA (LPDDR2) 5= 220-Ball PoP-VFBGA (LPDDR2) 0 = Wafer (KGD) 5 REV 1.1 04/2013 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI NT6TL128M32AI(Q , DQ17 DQ19 VSSQ DQ21 DQ23 VSSQ VDDQ DM2 VDD2 VSS LPDDR2 DQ 3 N/C VDD1 4 N/C N/C 5 N/C N/C 6 , DQ28 DQ27 VDDQ DQ24 DQS3_t LPDDR2 CA Power Ground Do Not Use ZQ DQS1_c K DM1 VSS DM0 ... Original
datasheet

154 pages,
3481.71 Kb

hynix lpddr2 sdram lpddr2 samsung lpddr2 spec LPDDR2 SDRAM elpida LPDDR 8Gb NT6TL256T32AS LPDDR2 PoP LPDDR2 SDRAM hynix NT6TL128T64AR-G0 NT6TL128M32AQ-G1 NT6TL128M32AQ-G0 ca9a NT6TL128M32 NT6TL128M32AI /NT6TL256T32AQ NT6TL128M32AI abstract
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Abstract: ) C = 90-Ball BGA (LPDDR, x32) A = 79-Ball BGA (LPDDR2, x16) I = 134-Ball BGA (LPDDR2, x32) Q = 168-Ball PoP-VFBGA (LPDDR2) R = 216-Ball PoP-VFBGA (LPDDR2) 3 = 240-Ball PoP-VFBGA (LPDDR2) 5= 220-Ball PoP-VFBGA (LPDDR2) 0 = Wafer (KGD) 5 REV 1.0 02/2013 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI NT6TL128M32AI(Q , DQ17 DQ19 VSSQ DQ21 DQ23 VSSQ VDDQ DM2 VDD2 VSS LPDDR2 DQ 3 N/C VDD1 4 N/C N/C 5 N/C N/C 6 , DQ28 DQ27 VDDQ DQ24 DQS3_t LPDDR2 CA Power Ground Do Not Use ZQ DQS1_c K DM1 VSS DM0 ... Original
datasheet

153 pages,
3474.31 Kb

NT6TL256T32AQ lpddr2 DQ calibration LPDDR2 1Gb Memory NT6TL128T64A5-G2 NT6TL128T64 elpida lpddr2 NT6TL128T64A5 NT6TL128T64AR-G0I ELPIDA mobile dram LPDDR2 LPDDR2 SDRAM hynix NT6TL128M32 NT6TL256 NT6TL256T32AQ-G0 NT6TL128M32AI /NT6TL256T32AQ NT6TL128M32AI abstract
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Abstract: , x16) K = 90-Ball BGA (LPSDR, x32) C = 90-Ball BGA (LPDDR, x32) A = 79-Ball BGA (LPDDR2, x16) I = 134-Ball BGA (LPDDR2, x32) Q = 168-Ball PoP-VFBGA (LPDDR2) R = 216-Ball PoP-VFBGA (LPDDR2) 3 = 240-Ball PoP-VFBGA (LPDDR2) 0 = Wafer (KGD) Note1: T =Dual Die Package (DDP) Note2: F = Quartic Die Package (QDP , balls through the package LPDDR2 12x12 PoP 1-channel 2x32 package ballout 1 2 3 4 5 6 A B C D E F G H J , Mask: For LPDDR2 devices that do not support the DNV feature, DM is the input mask signal for write ... Original
datasheet

135 pages,
3155.24 Kb

216-ball ELPIDA LPDDR2-S4 ELPIDA LPDDR2 POP LPDDR2 2Gb Memory LPDDR2 SDRAM elpida 79-Ball lpddr2 spec HYNIX NT6TL64M32AQ Etron Technology ELPIDA LPDDR2 LPDDR2 1Gb Memory lpddr2-s2 NT6TL64M32AQ -G1 NT6TL64M32AQ abstract
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Abstract: of the electrophoretic display function. The i.MX50 supports DDR2, LPDDR2, and LPDDR1 DRAM at clock , and external memory. The i.MX50 supports many types of external memory devices, including DDR2, LPDDR2 , Kbyte) · External memory interfaces: - 16/32-bit DDR2-533 DDR2-533, LPDDR2-533, or LPDDR1-400 LPDDR1-400 up to a total of 2 , 168-FBGA 168-FBGA LPDDR2 DRAM memory only. It is not possible to support LPDDR1 or DDR2 on the i.MX50 PoPBGA. · i.MX50 PoPBGA was designed to accommodate a combined LPDDR2 / eMMC PoP memory. The PoP eMMC device uses ... Original
datasheet

137 pages,
1516.2 Kb

emmc 4.4 standard jedec eMMC data retention eMMC memory lpddr2 eMMC 4.5 Samsung eMMC 4.51 eMMC PoP eMMC powerdown emmc spec eMMC impedance emmc Pin assignment emmc 4.5 spec samsung* lpddr2* pop package IMX50CEC MCIMX50 IMX50CEC abstract
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Abstract: electrophoretic display function. The i.MX50 supports DDR2, LPDDR2, and LPDDR1 DRAM at clock rate up to 266 MHz to , i.MX50 supports many types of external memory devices, including DDR2, LPDDR2, LPDDR1, NOR Flash, PSRAM , memory interfaces: - 16/32-bit DDR2-533 DDR2-533, LPDDR2-533, or LPDDR1-400 LPDDR1-400 up to a total of 2 GByte - 8-bit , 168-FBGA 168-FBGA LPDDR2 DRAM memory only. It is not possible to support LPDDR1 or DDR2 on the i.MX50 PoPBGA. · i.MX50 PoPBGA was designed to accommodate a combined LPDDR2 / eMMC PoP memory. The PoP eMMC device uses ... Original
datasheet

134 pages,
1536.55 Kb

eMMC "thermal impedance" "eMMC" Thermal Impedance eMMC powerdown MCIMX507CVM8B emmc 4.5 spec samsung emmc 4.4 standard jedec lpddr2 emmc samsung* lpddr2* pop package 153 ball eMMC memory emmc spec samsung emmc spec 153 ball eMMC memory 0.8 IMX50CEC MCIMX50 IMX50CEC abstract
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Abstract: The i.MX50 supports DDR2, LPDDR2, and LPDDR1 DRAM at clock rate up to 266 MHz to enable a range of , i.MX50 supports many types of external memory devices, including DDR2, LPDDR2, LPDDR1, NOR Flash, PSRAM , memory interfaces: - 16/32-bit DDR2-533 DDR2-533, LPDDR2-533, or LPDDR1-400 LPDDR1-400 up to a total of 2 GByte - 8-bit , UART2_CTS UART2_RTS Notes on Package Differences · The i.MX50 PoPBGA package supports 168-FBGA 168-FBGA LPDDR2 DRAM , designed to accommodate a combined LPDDR2 / eMMC PoP memory. The PoP eMMC device uses the SD3_DATA[7:0 ... Original
datasheet

135 pages,
1527.9 Kb

eMMC 4.4 eMMC 4.51 emmc 4.51 samsung emmc boot sequence emmc controller eMMC data retention VFPv3 samsung eMMC 5.1 SAMSUNG emmc emmc 4.5 spec Samsung eMMC 4.51 lpddr2 emmc emmc 4.41 spec IMX50CEC MCIMX50 IMX50CEC abstract
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Abstract: , including DDR3, low voltage DDR3, LPDDR2, NOR Flash, PSRAM, cellular RAM, and managed NAND, including eMMC , LPDDR2-800 channels - 16/32-bit NOR Flash. - 16/32-bit PSRAM, Cellular RAM (32 bits or less) Each i.MX , /32-bit DDR3-800 DDR3-800 or LPDDR2-800 · Supports up to 2 GByte DDR memory space The On-Chip OTP controller , LPDDR2 DDR3 - Worst case, assuming all SOC I/O operating at 1.8V. NVCC33 NVCC33_IO must always be greater than ... Original
datasheet

105 pages,
881.53 Kb

imx6 uart interrupt EB792 eMMC 4.41 application note IMX6 imx 179 Sony "IMX 175" CMOS sony IMX 179 USB HSIC sony imx 175 sony cmos sensor imx 104 Jedec lpddr2 sony cmos sensor imx 117 sony CMOS sensor imx 136 datasheet abstract
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