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Part Manufacturer Description Datasheet BUY
LT6106CS5#TR Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT6106CS5#TRPBF Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT6106CS5#PBF Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT6106HS5#TRPBF Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LT6106HS5#TRMPBF Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LT6106HS5 Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy

low cost BFR90 transistor

Catalog Datasheet MFG & Type PDF Document Tags

transistor bfr96

Abstract: msc1302 Guide Low Cost RF Plastic Package Options 1 1 1 2 Macro T MSC1302.PDF 10-25-99 1 4 , MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Gpe = 10 dB (typ) @ 60 mA, 300 MHz · 3 GHz Current-Gain Bandwidth Product , . Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; predriver, driver, and output stages. ABSOLUTE MAXIMUM RATINGS
Microsemi
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transistor bfr96 transistor BFR91 2n2857 UHF transistor common base amplifier 2N4427 equivalent bfr91 low cost BFR90 transistor 2N5179 BFR96 MRF5812 MRF581A BFR90 BFY90 MRF914

MRF586

Abstract: low cost BFR90 transistor (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 1 1 2 Macro T , MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Gpe = 10 dB (typ) @ 60 mA, 300 MHz · 3 GHz Current-Gain Bandwidth Product , . Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; predriver, driver, and output stages. ABSOLUTE MAXIMUM RATINGS
Microsemi
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MRF586 BFR90 amplifier bfr90 equivalent BFR91 transistor RF POWER TRANSISTOR NPN MRF904 MRF581 MRF951 MRF571 BFR91 MRF545

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: TRANSISTOR 12 GHZ Purpose) Selection Guide Low Cost RF Plastic Package Options 4 4 Macro T Macro X Power , 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor , -30 -35 -46 -76 -94 -115 -145 176 140 122 053-7004 Rev - 9-2002 2N5109 RF Low Power PA, LNA
Advanced Power Technology
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RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ TRANSISTOR 12 GHZ RF NPN POWER TRANSISTOR 1000 WATT MRF555T MRF559 MRF8372 MRF557 MRF557T MRF544

MRF517

Abstract: MRF553T -39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise , ) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 4 , MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Gpe = 10 dB (typ) @ 60 mA, 300 MHz 3 GHz Current-Gain Bandwidth Product (min) @ , 053-7016 Rev - 9-2002 MRF517 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide GPE
Advanced Power Technology
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MRF553T 2N3866A MRF3866 MRF555

2n4427 MOTOROLA

Abstract: motorola 2N4427 10-25-99 2 4 5 1 4 3 3 Macro X 200 200 TO-72 Low Cost RF Plastic Package , 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product , -39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier , , R2 2 50 MA C R O X MRF581A NPN 500 2 50 10 14 15 BFR90 NPN
Microsemi
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MSC1301 2n4427 MOTOROLA motorola 2N4427 2N3866 MOTOROLA 2N4427 equivalent Transistor 2n4427 MRF4427

2n4427 MOTOROLA

Abstract: motorola 2N4427 Guide 1 2 4 5 1 4 3 3 Macro X 15 200 15 8000 11 Low Cost RF , 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · · · · Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector , DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier , Type SO-8 TO-39 Package GPE Freq (MHz) RF Low Power PA, LNA, and General Purpose Discrete
Microsemi
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npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR mrf5943c motorola 2n2857 MOTOROLA SELECTION NPN Transistor output 10 w

RF 2N3866

Abstract: Transistor 2N3866 50 TO-72 Low Cost RF Plastic Package Options 2 1 MACRO X RF (Low Power PA / General , 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF , Macro BFR90 NPN 500 2.4 2 10 15 18 5000 15 30 TO-72 BFY90 NPN
Microsemi
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RF 2N3866 Transistor 2N3866 2N3866 equivalent UHF power TRANSISTOR PNP TO-39 MRF553 MRF607 MSC1067

MRF517

Abstract: VK200 mrf559 contact our factory direct. 20 400 30 400 TO-72 1 Macro X 3.5 11.4 1000 Low Cost RF , MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Gpe = 10 dB (typ) @ 60 mA, 300 MHz · 3 GHz Current-Gain Bandwidth Product , TO-39 DESCRIPTION: The MRF517 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; pre-driver, driver, and output stages. ABSOLUTE MAXIMUM
Advanced Power Technology
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2N6255 VK200 mrf559 nf c4 npn mrf559 vk200 VK200 RF Transistor Selection

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Guide Low Cost RF Plastic Package Options 1 1 1 8 2 1 4 3 3 Power Macro SO , 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · 1.2 GHz Current-Gain Bandwidth Product @ 50mA · 1. Emitter 2. Base 3 , silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver , 50 10 14 15 5000 Macro BFR90 NPN 500 2.4 2 10 15 18 5000
Advanced Power Technology
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RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 2 WATT 2 GHZ transistor 2n5109 for transistor bfr96 macro x power transistor

RF 2N3866

Abstract: 2N3866 Low Cost RF Plastic Package Options Macro T Macro X Power SO-8 Microsemi reserves the , 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF , Package RF Low Power PA, LNA, and General Purpose Discrete Selector Guide 1300 3.5 11.4 1000
Microsemi
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2N3866A

Abstract: RF NPN POWER TRANSISTOR 1000 WATT ) Selection Low Cost RF Plastic Package Options 1 1 8 1 2 2 3 5 1 4 3 2N3866 , 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF , 2 50 10 14 15 5000 Macro BFR90 NPN 500 2.4 2 10 15 18
Advanced Power Technology
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npn power amplifier circuit data 2n3866

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ NPN 13.5 1500 70 400 11 RF (LNA / General Purpose) Selection Guide Low Cost RF , 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · 1.2 GHz Current-Gain Bandwidth Product @ 50mA · 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB (typ) @ 200 MHz TO-39 DESCRIPTION: Silicon NPN transistor , Macro BFR90 NPN 500 2.4 2 10 15 18 5000 15 30 400 TO-72 BFY90
Microsemi
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MSC1304 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor NPN 30 watt 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179 MRF5943C

2N3866

Abstract: mrf571 RF (Low Power PA / General Purpose) Selection RF (LNA / General Purpose) Selection Low Cost RF , 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum , . Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications , capacitors are air variable 059-7001 Rev - 9-2002 2N3866 / 2N3866A RF Low Power PA, LNA, and
Advanced Power Technology
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MRF5943

2N5109

Abstract: transistor 2N5109 NPN 13.5 1500 70 400 11 RF (LNA / General Purpose) Selection Guide Low Cost RF , 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · 1.2 GHz Current-Gain Bandwidth Product @ 50mA · 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB (typ) @ 200 MHz TO-39 DESCRIPTION: Silicon NPN transistor , BFR90 NPN 500 2.4 2 10 15 18 5000 15 30 400 TO-72 BFY90 NPN
Microsemi
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2n5109 transistor

2N3866

Abstract: Transistor 2N3866 PRELIMINARY 2N3866/2N3866A.PDF 3-10-99 200 200 8000 Low Cost RF Plastic Package Options 4 , 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF , MRF4427, R2 Type SO-8 TO-39 Package GPE Freq (MHz) RF Low Power PA, LNA, and General
Microsemi
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BFR91 parameter S

2N4427

Abstract: 1300 NPN ) Selection Guide 1 Macro X 200 200 8000 Low Cost RF Plastic Package Options Macro T 15 , 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · · · · Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base , ) @ 175 MHz DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications , , R1, R2 2 50 MRF581A NPN 500 2 50 10 14 15 BFR90 NPN 500 2.4
Advanced Power Technology
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1300 NPN

MRF transistor mrf 304

Abstract: 107j capacitor ) Selection RF (LNA / General Purpose) Selection Guide low Cost R FPlastic Package Options PACKABE , RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product · TO-39 DESCRIPTION: Silicon NPN transistor , MRF571 BFR91 BFR90 MRf545 MRFS44 NPN 1000 NPN 1000 NPN 1000 NPN 1000 PNP NPN 10 100 10 12 IS 70 3S
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OCR Scan
MRF transistor mrf 304 107j capacitor MRF transistor mrf 1300 capacitor 107J MRFS81 12N3866A RF557T 044AM

2N3819 spice model

Abstract: varactor APPLICATION pairs are ideal for low cost microwave designs extending to 2.5GHz and above. The reverse breakdown , -23) or E-Line style packages that exhibit low inductance ensuring a wide frequency application, and , due to its diffusion profile, and as a consequence of this is capable of high Q and low distortion , relatively low VR of 3 or 4V, and ranges 100 to 450 depending on device type (see Product Range Tables). , inductance of 2.8nH, while the E-Line package shows less than 0.2pF and 5nH respectively. These low values
Zetex Semiconductors
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ZC740 FMMV2101 2N3819 spice model varactor APPLICATION construction of varactor diode 1GHz vco 0-30v variable power supply BBY40 spice C3/C25 BBY31 BBY40 FMMV105G FMMV109 FMMV3102

2N3819 spice model

Abstract: construction of varactor diode as series pairs are ideal for low cost microwave designs extending to 2.5GHz and above. 700 Tj , packages that exhibit low inductance ensuring a wide frequency application, and assure environmental , profile, and as a consequence of this is capable of high Q and low distortion, while the Hyperabrupt , and the 950 low voltage hyperabrupt series. Obviously, the choice of device type depends upon the , minimum Q at test conditions of 50MHz, and a relatively low VR of 3 or 4V, and ranges 100 to 450
Diodes
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ZMV830B 2N3819 S T A 933 2N3819 equivalent transistor 2N3819 ZC829A ZV930V2 ZMV930 ZC930 ZV931V2 ZMV931 ZC931

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 244A-01/1 244A-01/1 244A-01/1 244A-01/1 TO 2 GHz, CLASS A The "R F" series offer low cost alternatives , low noise and high gain amplifier mixer, and m ultiplier applications. Each transistor type is , (continued) 2 7 -5 0 MHz, LOW -BAND FM BAND For use in the FM "Low-Band," for Mobile communications. pout , in this UHF power transistor series feature internally input-matched construction, are designed for , L-BAND PULSE POW ER These products are designed to operate in short pulse width, 10 /xs, low duty cycle
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OCR Scan
2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L MRF138 MRF140 MRF148 MRF150 MRF153 MRF154
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