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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

lc 945 transistor

Catalog Datasheet MFG & Type PDF Document Tags

lc 945 transistor

Abstract: transistor LC 945 ERICSSON $ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation from 925 to , 920 925 930 935 940 945 950 955 960 965 Frequency (MHz) Package 20200 , lc Pd Value 40 65 4.0 8.0 145 0.83 -4 0 to +150 1.2 Unit Vdc Vdc Vdc Ade Watts W/°C "C "C/W , A, lc = 50 mA VBe = 0 V, lc = 50 mA = 0 A, I e = 5 mA VCE = 5 V, lc = 250 mA Symbol V(BR)CEO
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lc 945 p transistor

Abstract: transistor 2 FC 945 Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz · · Low noise figure High
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lc 945 p transistor

Abstract: Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz 1 1 · · Low noise figure
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BFR96S

Abstract: 6852 d TRANSISTOR Philips Semiconductors Product specification NPN 5 GHz wideband transistor Ã' BFR96S 'HILIPS INTERNATIONAL SLE D m 711002b 004S7Ã"4 2S3^11PHIN DESCRIPTION NPN transistor in a plastic SOT37 envelope , frequency lc = 70 mA; VCE = 10 V; f = 500 MH2; Tj = 25 °C 5 - GHz cre feedback capacitance lc = 0; VCE = 10 V; f = 1 MHz 1 - PF GUM maximum unilateral power gain lc = 70 mA; VCE = 10 V; f = 800 MHz; Tan,b=25°C 11.5 - dB F noise figure lc = 70 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C 4 â'" dB v0 output
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BFQ32S 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN B 557 PNP TRANSISTOR BFR96S/02

lc 945 p transistor

Abstract: lc 945 p transistor NPN transistor £ BFR96S ^N AHER PHILIPS/DISCRETE hIE T> ' DESCRIPTION NPN transistor in a plastic SOT37 , vCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 15 V lc DC , transition frequency lc = 70 mA; VGE = 10 V; f = 500 MH2; Tj = 25 °C 5 - GHz cre feedback capacitance lc = 0; VCE = 10 V; f = 1 MHz 1 - PF GUM maximum unilateral power gain lc = 70 mA; VCE = 10 V; f = 800 MHz; Tomb = 25 °C 11.5 - dB F noise figure lc = 70 mA; VCE = 10 V; f = 800 MHz; "1^=25 °C 4 - dB
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lc 945 transistor s5D transistor transistor B 764 SL 100 NPN Transistor FP 801 transistor 2097

lc 945 p transistor NPN

Abstract: BFR96S wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device features , collector-emitter voltage open base - 15 V lc DC collector current - 100 mA Pfot , lc = 70 mA; VC = 10 V; f = 500 MH2; E T| = 25 °C 5 â'" GHz cr e feedback capacitance lc = 0; VC = 10 V; f = 1 MHz E 1 - PF G um maximum unilateral power gain
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S3R31 D031A15

527H

Abstract: D 1413 transistor S822T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for , current consumption 50 Q input impedance at 945 MHz · Low noise figure · High power gain Marking: 822 , Geaditions Transition frequency VCE = 3 V, lc = 1 mA. f = 500 MHz VCE = 2 V, lc = 1.5 mA, f = 500 MHz , V, lc = 1.5 mA Zs = Zsopt, f = 450 MHz, VCE = 2 V, Ic = 0.5 mA Power gain VCE = 3 V. Ic = 1 mA, f = 945 MHz VCE = 2 V, Ic = 1.5 mA, f = 945 MHz VCE = 2 V, Ic = 0.5 mA, f = 450 MHz Collector current for
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527H D 1413 transistor 1300M

BD947

Abstract: BD943 BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistor* in a , complements are BD944; 946 and 948. QUICK REFERENCE DATA BD943 945 947 Collector-base voltage (open , temperature Ti max. 150 oc D.C. current gain lc- t0mA;VcE = 5V hFE > 25 lc-500mA;VCE-1 V "FE 85 to 475 IC- 2A;VCE-1V hFE > 50 50 40 Transition frequency at f - 1 MHz lc-250mA;VCE-1 V IT > 3 , cut-off current IC = 0;VEB-5V D.C. current gain (note 1) lc= 10mA;VCE = 5V IC = 500 mA; VCE = 1 V IC
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b0945 7Z82145 7Z82147 7Z82146 0034S40

transistor k 911

Abstract: wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope , , radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation , VcEO collector-emitter voltage open base lc DC collector current Pm total power dissipation up to Ts = 70 °C (note 1) fT transition frequency lc = -3 0 mA; VC = -5 V; f = 500 , maximum unilateral power gain lc = -30 mA; VC = -5 V; f = 500 MHz; E T « *-2 5 « C F noise
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transistor k 911 BFR93 BFR93A

lc 945 p transistor

Abstract: lc 945 transistor ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20095 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation across the , Voltage E to B DC Current Gain (100% Tested) ERICSSON ^ Conditions tß = 0 A, lc = 100 mA Vbe = 0 V, lc = 100 mA lc = 0 A, lg = 5 mA V c e = 5 V, lc = 1-0 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hpE , Specifications Characteristic Gain ( 100% Tested) Symbol lC Q Min 10 Typ 11 Max Units dB
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transistor LC 945

TAG 8907

Abstract: lc 945 p transistor PhjjjP^Semiconductors M 711005b ODb^Bbl SIS PNP 5 GHz wideband transistor PHIN Product specification £ BFT93 DESCRIPTION PNP transistor in a plastic SOT23 envelope. It is primarily intended for , analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very , transition frequency lc = -30 mA; VCE = -5 V; f = 500 MHz; T, = 25 °C 5 - GHz cre feedback capacitance ic = -2 mA; VCE = -5 V; f = 1 MHz 1 - pF GUM maximum unilateral power gain lc = -30 mA; VCE = -5 V; f =
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TAG 8907 1348 transistor B 1449 transistor B 1446 transistor 2F PNP SOT23 SiS 671
Abstract: ERICSSON ^ PTB 20219 70 Watts, 925 - 960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across , Ib = 0 A , lc = 100 mA VBE = 0 V , lc = 100 mA lc = 0 A, Ie = 5 mA VCe = 5 V, lc = 1 A Symbol , 930 935 940 945 950 955 960 Vcc, Supply Voltage Frequency (MHz , C2, C3 C4 C5 C6 Circuit Board PTB 20219, NPN RF Transistor Microstrip (see Artwork detail below -
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G-200

lc 945 p transistor

Abstract: transistor LC 945 -00511 Surface Mount General Purpose Silicon Bipolar Transistor Features â'¢ 11 dB Typical P,dB at 2.0 GHz â , Available1 Description The AT-00511 is a low cost NPN silicon bipolar transistor housed in the surface , Stable Gain vs. Frequency VCE = 8V, lc= 5 mA SOT-143 Plastic Package EMITTER BASE á 0.92 (0.0361 , = 8 V, lc = 10 mA .5 1.0 2.0 Frequency, GHz 5.0 FREQ NFo ropt Rn/Zo GHz dB MAG ANG - 0.1 1.3 , Insertion Power Gain: VCE = 8 V, lc = 5 mA f = 1.0 GHz f = 2.0 GHz dB 11.0 12.5 7.2 PldB GldB Power Output
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T773 M447SA4 0DDT77E

lc 945 p transistor

Abstract: lc 945 transistor Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a , general purpose high frequency switching applications. QUICK REFERENCE DATA SYMBOL VC E lc P lo t V C , 1.000 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT , CONDITIONS VG E= 0 V; lc = 0.25 mA VC E= VQ E ; lc = 1 mA VC E= 800 V; VQ E= 0 V; Tt = 25 'C VC E= 800 V; VG
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T0220AB BUK856-8Q0A

lc 945 transistor

Abstract: ERICSSON ^ PTB 20105 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to , Vdc Vdc Vdc Ade Watts W /X °C lc Pd Rejc °c/w PTB 20105 Electrical Characteristics , % Tested) ERICSSON ^ Conditions lg = 0 A, lc = 100 mA Vbe = Symbol V(BR)CEO V (BB)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5.0 50 Max - - 120 Units Volts Volts Volts - o V, lc
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transistor LC 945

Abstract: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a , general purpose high frequency switching applications. QUICK REFERENCE DATA SYMBOL VC E lc , 40 50 125 150 150 UNIT V V V A A A A W lc lc IcLM Ic M P., Ts tg Tj , Insulated Gate Bipolar Transistor (IGBT) BUK856-800A STATIC CHARACTERISTICS I,* = 25 'C unless
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D 1414 transistor

Abstract: AT-00511 ml'FA PACKARD AT-00511 Surface Mount General Purpose Silicon Bipolar Transistor Features · · · · · , AT-00511 is a low cost NPN silicon bipolar transistor housed in the surface mount plastic SOT , . Frequency VCE = 8 V ,lc = 5 m A 2.642 (0.104) 2.108(0.083) Typical Noise Parameters: VCE= 8 V, lc = , Power Gain: VCE = 8 V, lc = 5 mA Power Output @ 1 dB Compression: Vce = 8 V, lc = 15 mA 1 dB Compressed Gain: VCE = 8 V, lc = 15 mA Optimum Noise Figure: Vce = 8 V, lc = 5 mA Gain @ NFo: VCE = 8 V, lc = 10
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D 1414 transistor 4447SA4 0X103

lc 945 transistor

Abstract: ERICSSON ^ PTB 20097 40 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the , % Tested) ERICSSON ^ Conditions Ib = 0 A, lc = 100 mA V b e = 0 V, lc = 100 mA Symbol V(BR)CEO V , _ _ _ 100 lc = 0 A, I e = 5 mA V ce = 5 V, lc = 1 A RF Specifications Characteristic Gain , , lC Q = 200 mA, f = 960 MHz) ilC 'F 50 Load Mismatch Tolerance (Vcc = 25 Vdc, Pout = 40 W
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lc 945 p transistor NPN TO 92

Abstract: lc 945 transistor ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to , VcER V CBO V EBO Value 40 65 4.0 8.0 145 0.83 Unit Vdc Vdc Vdc Ade Watts W/°C °C °C/W lc PD , , lc = 50 mA V Be = 0 V, lc = 50 mA |q = 0 A, Ie = 5 mA V c e = 5 V, lc = 250 mA Symbol V(BR)CEO V , Pout = 60 W -4- 920 925 930 935 940 945 950 I- 955 L 960 965 Frequency (MHz
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lc 945 p transistor NPN TO 92

lc 945 p transistor NPN

Abstract: lc 945 p transistor ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the , Above 25°C derate by (/> (Q T f|a n g e Symbol VcER V CBO V ebo lc = 25°C PD Value 40 50 4.0 , E to B DC Current Gain Tested) ERICSSON ^ Conditions Ib = 0 A, lc = 50 mA V Be = 0 V, lc = 50 mA |q = 0 A, Ie = 5 mA V c e = 5 V, lc = 250 mA Symbol V(BR)CEO V (BR)CES V(BR)EBO hFE Min 25
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