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HS1-201HSRH-8 Intersil Corporation QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, CDIP16, ROHS COMPLIANT, SIDE BRAZED, CERAMIC, DIP-16 visit Intersil
HS1-201HSRH-Q Intersil Corporation QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, CDIP16, ROHS COMPLIANT, SIDE BRAZED, CERAMIC, DIP-16 visit Intersil
TLK1201RCPR Texas Instruments IC DATACOM, ETHERNET TRANSCEIVER, PQFP64, PLASTIC, HVQFP-64, Network Interface visit Texas Instruments
LMR12010XMKE/NOPB Texas Instruments 3V to 20V, 1A Step-Down DC/DC Switching Regulator in SOT-23 6-SOT-23-THIN -40 to 125 visit Texas Instruments Buy
ADS1201U Texas Instruments High Dynamic Range Delta-Sigma Modulator 16-SOIC -40 to 85 visit Texas Instruments Buy
MSC1201Y2RHHT Texas Instruments 8-BIT, FLASH, 33MHz, MICROCONTROLLER, PQCC36, GREEN, PLASTIC, QFN-36 visit Texas Instruments

la 1201 sanyo

Catalog Datasheet MFG & Type PDF Document Tags

DL-4146-101

Abstract: laser diode 405nm LASER DIODE 2007-11 SANYO Electric Co.,Ltd Electronic Device Company Sales&Marketing Division , Tottori SANYO Electric Co.,Ltd Electronic Device Company Photonics Business Division 5-318,Tachikawa-cho , ://www.sanyo-photonics.com C 2007 SANYO Printed in Japan 2007.11 IM 2k Laser Line-up for Industrial Use SANYO Laser , Stimulated Emission of Radiation". SANYO laser diode structure and basic element structure are listed below , (17.5) 22.5 1.2±0.1 3.9±0.5 0.25 Laser Diode Series 1 2 3 2.0 5.6mm can 1 : 90
SANYO Electric
Original

a 1201 sanyo

Abstract: transistor Bc 313 NF 28 .5 60 SANYO SEMICONDUCTOR CORP Case Outlineâ'"[0013] unit:mm 3.O0( Pitch =0.5) -12.0-1 JIS , SANYO SEMICONDUCTOR CORP 12E D J 7Tc1707ki 0005410 3 ©1406A Use â'¢ Video Camera Features « Large , , f= 1kHz :The 2SK493 is classified by loss as follows (unit: mA): | 5.0 F 12.01 10.0 G 24.0 | 16.0 H 38.0 Case Outline 2005A (unit: mm) 2.0. Ojtt JEDEC: TO-92 EIAJ ! SC-43 SANYO: NP 6027KI/N283KI, TS «No. 1406-1/3 1749 SANYO SEMICONDUCTOR CORP " 1EE » J TTITOTb QQOS411 2SK493_
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a 1201 sanyo transistor Bc 313 NF 28 la 1201 sanyo n1cj DDD3710

la 1201 sanyo

Abstract: 3SK107 " B: Base C: Collector E: Emitter SANYO: T0126LP Case Outlineâ'"[2050] unit:mm 1EE D g 7c] , SANYO SEMICONDUCTOR CORP 15E D J 7c]c]707b 00054^7 T Use â'¢ PM tuners and VHF tuners , 24.0 Case Outline 2031A (unitrmm) 'n Gli Cat«I S t Sourc« D I Or«in C21 Citt3 SANYO: DP4A , =4-0V Drain-source voltage,Vos - V 1807 SANYO SEMICONDUCTOR CORP 3SKÌ07 ~ 1EE D J 7Tì707ti DDQSmal'dl T'Sh a , \ \ \ v \ s la 04 .»â'¢0
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3SK107 3SK107 e V02s4 LI 1806 E 151 R 100UA 100MH 0DGB752

la 1201 sanyo

Abstract: : Cathode 3 : Anode n n rtr Specifications 3.8nom Absolute Maximum Ratings Param eter SANYO , ) ' Li 0.05 Cmin N ote)* : C apacitance value o f one diode â  Any and all SANYO , m aterial damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. â  SANYO assumes no responsibility for , specifications of any and all SANYO products described or contained herein. SANYO Electric Co.fLtd
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ENN698D SVC202SPA

2SK922

Abstract: mos fet 120v 10A .5 60 SANYO SEMICONDUCTOR CORP Case Outlineâ'"[0013] unit:mm 3.O0( Pitch =0.5) -12.0-1 JIS , SANYO SLHICONDUtTOK ©2SC4293 Silicon Transistor Vary High-Definition Color Display Horizontal Deflection Output Applications â'¢ SANYO: T03PML package â'¢ Fast speed â'¢ High breakdown voltage â'¢ High , Deflection Output Applications â'¢ SANYO: T03PML package â'¢ Fast speed â'¢ High breakdown voltage â , 300ns max. S32SD2002 Silicon Transistor Horizontal Deflection Output Applications â'¢ SANYO: T03PML
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2SC4294 2SK922 mos fet 120v 10A fet Marking M3 32SK848 S32SK917 T0220 S52SK918 232SK91

2sc284

Abstract: 2SC2840 SANYO SEMICONDUCTOR CORP * 2SC2840 -lac i) I 711707t ooomaa a 2033 NPN Epitaxial Planar , -15.0-» \t~ - li- â'" â'¢ - X B: Base C: Collector E: Emitter SANYO: SPA 0.4 The , where you are planning to use the 2SC2840. _3127KI/3155MW,TS No.796-1/4 522 1 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS â'¢ All of Sanyo Transistor case , JEDEC: TO-92 EIAJ : SC-4 3 SANYO: NP "8 -B-C Of 4.0-1 B. Base C. Collector E. Emitter Case
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2sc284 TRANSISTOR sanyo marking 2sc2999 bc 207 npn sanyo 2033 2SC2999 10mmiS 600MH

la 1201 sanyo

Abstract: 2SK315 .5 60 SANYO SEMICONDUCTOR CORP Case Outlineâ'"[0013] unit:mm 3.O0( Pitch =0.5) -12.0-1 JIS , SANYO SEMICONDUCTOR CORP 15E D I 71T?D7b 00053^7 b 2SK315 I 1 T-3I-2C N-Channel Junction 2040 , i Source D: Drain SANYO: SPA 'Je o.i tablent Tenperature,Ta - 6017KI/3145KI No.1005-1/4 1706 SANYO , Drain current. Id â'" mA 1707 SANYO SEMICONDUCTOR CORP 2SK315 crss - Vds o (TJ a 'S 0.1 VQ f ,   T-3 ) _ SANYO SEMICONDUCTOR CORP 2SK315 Input admittance,yis - VPS .iff 3 f=IOOMHz
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SILICON TRANSISTOR FS 2025 2030a 1005B 6017KI/314

2SK283

Abstract: STK282-170-E sanyo .5 60 SANYO SEMICONDUCTOR CORP Case Outlineâ'"[0013] unit:mm 3.O0( Pitch =0.5) -12.0-1 JIS , t-, 0-0.1 1.0.8-â'"1.1 â'" : Gate : Source : Drain SANYO : CP The 2SK283 is scheduled to be discontinued soon. 6027KI/3075MW,TS No.794-1/3 1701 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS â'¢ All of Sanyo Transistor case outlines are illustrated below. â'¢ All , 11 â Â«-5.0â'"» t-0.45
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STK282-170-E sanyo ss 7941 1501T 10JIA

2SD439

Abstract: transistor af 126 .5 60 SANYO SEMICONDUCTOR CORP Case Outlineâ'"[0013] unit:mm 3.O0( Pitch =0.5) -12.0-1 JIS , SANYO SEMICONDUCTOR CORP 2SB559 2009A 1EE D J 7cH7G7b â¡â¡D3C1ÛE S PNP/npn Epitaxial Planar , /3085MY.TS No.372-1/4 321 t SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS â'¢ All of Sanyo Transistor case outlines are illustrated below. â'¢ All dimensions are in mm, and , -0.45
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2SD439 transistor af 126 JIS G 3201 35H-0

2SD1161

Abstract: sj 2025 " B: Base C: Collector E: Emitter SANYO: T0126LP Case Outlineâ'"[2050] unit:mm 1EE D g 7c] , M3X0.5 60 SANYO SEMICONDUCTOR CORP Case Outlineâ'"[0013] unit:mm 3.O0( Pitch =0.5) -12.0-1 , SANYOi CP 5277KI/3045MW,TS Mo.849-1/1 1339 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS â'¢ All of Sanyo Transistor case outlines are illustrated below. â , _i oo trì«i 11 â Â«-5.0â'"» t-0.45
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2SD1161 sj 2025 sj 2038 B1181 marking D63 Transistor 2SD1161

2SA1210

Abstract: 2SC2912 SANYO SEMICONDUCTOR CORP 2SC2912 1SE D J 7c]c]707Li ODDint -7^33-07 2009A NPN/pnp Epitaxial , . 780-1/3 535 SANYO SEMICONDUCTOR CORP 2SC2912/2SA1210 1SE D I 7cn?D7t, QOGmi? 2 "P33-07 -140 , O.AmN Q.3n lA -L Q.2mJ r I 1 0.1 oA -1- IB = 0 140 120 < b , > \ \ 2£ vc «2 E = ?I2 = I0V 2 10 7 >00 2 Collector current, Ic â'" mA 1 SANYO , SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS â'¢ All of Sanyo
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2SA1210 A1210 TO-220AA transistor BC 536 2SA1210/2SC2912 B1252

2SC2813

Abstract: LC1 D63 " B: Base C: Collector E: Emitter SANYO: T0126LP Case Outlineâ'"[2050] unit:mm 1EE D g 7c] , M3X0.5 60 SANYO SEMICONDUCTOR CORP Case Outlineâ'"[0013] unit:mm 3.O0( Pitch =0.5) -12.0-1 , : ^ o.i-i â'"1.1-J 0.« B: Base C: Collector E: Emitter SANYO: CP The 2SC2813 is scheduled to be , the 2SC2813. 4157KI/2173KI.TS.^No. 692-1/3 513 1 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS â'¢ All of Sanyo Transistor case outlines are illustrated
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LC1 D63 Q5270I LC1 FH 43 2SC3142 Q5270 EIAJ

2SC930

Abstract: transistor 2SC930 SANYO SEMICONDUCTOR CORP 1EE D |^?cH7G7b 0004141 The 2SC930 has two types of packges SPA and NP , ) 2.2 1â'" »3â'" -15.0-» 1 t 14 t B : Base C: Collector E: Emitter SANYO: SPA 0.4 Case Outline 2003A (unit:mm) 2.0 . 0.« 0.« JEDEC: TO-92 EIAJ : SC-4 3 SANYO: NP OS -«-c of B, Base C , .545-1/17 480 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS â'¢ All of Sanyo Transistor case outlines are illustrated below. â'¢ All dimensions are in mm, and dimensions which
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2SC930SPA 2SC930NP transistor 2SC930 2SC2839 2SC930 D 2SC930NP11

2SC2271

Abstract: transistor 2SC2271 SANYO SEMICONDUCTOR CORP 2SC2271 I 13E DJ7T17D71, QOD41S7 ij" T-3I-Ã"3 2006A NPN Triple , 2006A (unit:mm) SANYO I MP The 2SC2271 is scheduled to be discontinued soon. Use the 2SC3468, instead , .493-1/2 496 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS â'¢ All of Sanyo Transistor case outlines are illustrated below. â'¢ All dimensions are in mm, and , «-5.0â'"» t-0.45
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transistor 2SC2271 JIS G3141 b1111 b1252 TRANSISTOR 4157KI/3195MW

d331 npn transistor

Abstract: D331 transistor SANYO SEMICONDUCTOR CORP 2SD330, 331 2SB514, 515 ©397d 201 OA 2012 15E D I TWOTb Q004T05 , ,Ic=0 (-)i.o mA DC Current Gain hFE(l) Vce= (-)2V,Ic=(-) 1A 40* 320* hFE(2) VCE= (-)2V,Ic=(-)0.lA , 2SB515/D331. 3257AT/7193KI,TS No.397-1/3 1242 SANYO SEMICONDUCTOR CORP 2SD330.33Ì/2SB514.515 1c - , "¢=5V_ ai 1.0 s Collector Current,le - A Collector Current,Ic - A 1243 SANYO SEMICONDUCTOR CORP , ,Vce - V 1244 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS
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d331 npn transistor D331 transistor D331 PNP D330 NPN transistor transistor d331 d331 515/2SD330 201OA 2SB514/2SD330

ICL 2025

Abstract: la 1201 sanyo " B: Base C: Collector E: Emitter SANYO: T0126LP Case Outlineâ'"[2050] unit:mm 1EE D g 7c] , SANYO SEMICONDUCTOR CORP 2SC3085 2017 ©1055A Features . High breakdown voltage(VCB0 , :Emitter B.Base 4207KI/2125MW.TS No.1055-1/3 592 SANYO SEMICONDUCTOR CORP Turn-ON Time Storage Time , hFE - Iç « h a u u 3 O O o c > io S g "¤ Ut? o m +3 Ol S Sì â'¢gl "o t o> * Collector , Current,Ig - A 593 i SANYO SEMICONDUCTOR CORP 2sc3085 12 E D |"?Tì7G7t, DOOMESS 1 T-33-/S-' H S
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ICL 2025 TRANSISTOR FS 2025 TDK SC45 MARKING LR SANYO VCB0-500V i52 marking D004SSB 300U3

TRANSISTOR FS 2025

Abstract: SILICON TRANSISTOR FS 2025 SANYO SEMICONDUCTOR CORP 2SK775 1EE D J ?c]cì?Q7t. â¡QDS4S,:i â¡ T-3T-U 2052A N-Channel , a SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS â'¢ All of Sanyo Transistor case outlines are illustrated below. â'¢ All dimensions are in mm, and dimensions , -0.45
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AKO 450 2052A DS-17 SANYO SC-46

2SC2228Y

Abstract: vt900 SANYO SEMICONDUCTOR CORP 2SC2228A, 2228Y I 12E D J 7^7D7t. ODD41S4 T-3I-03 2006A NPN Triple , as follows: »0 C 80 60 D 120 100 E 200 160 F 320 Case Outline (unit:mm) 2006A 3.0 n t ?T -8.5â'"⺠«-w.o-J 0.5 EIAJl SC-51 SANYO I MP Bi Base Ci Collector Ei Emitter The 2SC2228A, 2228V are , where you are planning to use the 2SC2228A, 2228Y. 4147KI/3195MW.TS No.665-1/3 493 SANYO , Colleotor to Base Voltage,VCB - V 494 SANYO SEMICONDUCTOR CORP 15E D J 7WD7b, â¡â¡â¡415t, Tp 2SC2228A
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2SC2228Y 2SC3467 vt900 MARKING .40AA pa 2030a 60AA

2SK687

Abstract: DDD3710 : Emitter SANYO: T0126LP Case Outlineâ'"[2050] unit:mm 1EE D g 7c]¬7D7k] â¡â¡â¡37EG â'" T-ft-cio 1 an , I SANYO SEMICONDUCTOR CORP 2SK687 2052A IE E D J 7^707^ QOaS44b S T~VMl N-Channel MOS Silicon , Test Circuit Vout Case Outline 2052A JEDEC: TO-220AB EIAJ; SC-46 3267TA.TS No.2464-1/2 1785 I SANYO , VS ->'"- V b lafs- s s s - Drain to Source Voltage,VDS - V 100 1786 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE
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0GDS447

D1801

Abstract: la 1201 sanyo : Emitter 4 : Collector SANYO: TP 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO: TP-FA SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg. 1-10.1 Chome , preceding page. min typ max unit B-E Saturation Voltage VÃE(sat) Ic = (-)lA,IB = (-)50mA (-)0.9 ( â , '¢04 2S B vc^ 1201 = - 2 V / / / /i / /l/r ly ^ VI' â'¢b j / vJy 1000 , responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors
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2SB1201 D1801 transistor 2SB1201 2112-B 2112b 2044B 2112B 2SB1201/2SD1801 2SB1201/2SD1801- 2045B
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