NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2830 S. Fairview St. Santa Ana, Ca 92704 (714) 979-8220 BZX84 BZX84 Series 8700 E. Thomas Road Scottsdale, Az 85252 (602) 941-6300 SOT-23 Zener Voltage Regulator Diodes 225mWatt 2.4 - 75 Volts Features l l l 230mWatt Schottky Barrier Diode Low Profile SOT-23 Package Wafer Fabrication in ISO9001 ISO9001 Certified Facility Maximum Ratings l Peak Pulse Power: 225mWatts SOT-23 Package , Substrate, *TA = 25 oC mW Marking Code: L4p Derate above 25 oC Thermal Resistance Junction to ... | Original |
1 pages, |
sot23 zener 602 SOT 96 diode sot-23 bzx84 sot package sot-23 MARKING CODE L4P sot-23 marking 24 sot-23 marking code pd sot-23 Marking nc az marking code sot 23 BZX84 MSC0104 Schottky Diode Marking sot-23 2 Zener Diode SOT-23 BZX84 abstract |
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| Abstract: 7110flab 00bû30S ô71 â- PHIN BAT54 BAT54 7 V. SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky barrier diode with an integrated p-n junction protection ring in a microminiature SOT-23 envelope intended for surface mounting. The diode features especially a low forward voltage, QUICK REFERENCE DATA Continuous , 1-1 - 0 max 30° max Dimensions in mm Marking code: L4p o.2©1A|B 1.4 2.5 1.2 max 0.48 -0.1 7Z 96885.1 , > 30 V Diode capacitance VR = 1 V;f = 1 MHz Cd « 10 PF Reverse recovery time when switched from Ip ... | OCR Scan |
3 pages, |
sot23 12p BAT54 JH MARKING CODE SCHOTTKY DIODE sot-23 marking 7z MARKING CODE L4P 12P SOT23 12p sot-23 ,MARKING 12p SOT-23 l4p diode BAT54 abstract |
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| Abstract: m bbss^i 002433^ na HIAPX N AMER PHILIPS/DISCRETE L7E D BAT54 BAT54 SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky barrier diode with an integrated p-n junction protection ring in a microminiature SOT-23 envelope intended for surface mounting. The diode features especially a low forward voltage. QUICK , 10° max I \ I t . 0.1 max • 10° â- max _ 1.1 . max 30° max Dimensions in mm Marking code: L4p , Reverse current VR = 25 V Reverse breakdown voltage Diode capacitance VR = 1 V; f = 1 MHz Reverse ... | OCR Scan |
3 pages, |
SOT-23 IP h 125 tam BAT54 mv diode 203 l4p diode BAT54 abstract |
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| Abstract: BAT54/A/C/S BAT54/A/C/S BAT54/A/C/S BAT54/A/C/S Connection DiagramS 3 3 3 BAT54 BAT54 3 BAT54A BAT54A L4P 2 1 1 1 BAT54C BAT54C 3 2 MARKING BAT54 BAT54 = L4P BAT54A BAT54A = L42 BAT54C BAT54C = L43 BAT54S BAT54S = L44 SOT-23 1 2NC 1 2 1 2 3 BAT54S BAT54S 2 Schottky Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse , Capacitance vs Reverse Bias Voltage BAT54 BAT54, Rev. C1 BAT54/A/C/S BAT54/A/C/S Small Signal Diode TRADEMARKS The ... | Original |
3 pages, |
BAT54S BAT54C BAT54A BAT54 BAT54A FAIRCHILD l44 sot-23 BAT54/A/C/S BAT54/A/C/S abstract |
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| Abstract: DISCRETE POWER AND SIGNAL TECHNOLOGIES BAT54/A/C/S BAT54/A/C/S 3 CONNECTION DIAGRAMS PACKAGE BAT54 BAT54 L4P SOT-23 TO-236AB (Low) 1 2 3 2 NC 1 MARKING BAT54 BAT54 L4P BAT54C BAT54C L43 BAT54A BAT54A L42 BAT54S BAT54S L44 3 BAT54C BAT54C 2 1 3 3 2 1 BAT54A BAT54A BAT54S BAT54S 1 2 Schottky Barrier Diode Sourced from Process KA Absolute Maximum Ratings* Sym Tstg TJ Wiv IF if iF(surge) PD TA = 25OC unless otherwise noted Parameter Value -55 to +150 +150 25 200 ... | Original |
5 pages, |
marking L4P SOT23 MA MARKING SOT23 BAT54S BAT54C BAT54A BAT54 schottky diode bat54 l44 BAT54/A/C/S BAT54/A/C/S abstract |
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| Abstract: BAT54 BAT54 thru BAT54S BAT54S 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features · · · Low Forward Voltage Surface Mount SOT-23 Package Capable of 230mWatts of Power Dissipation Microsemi Catalog Number BAT54 BAT54 BAT54A BAT54A BAT54C BAT54C BAT54S BAT54S 230mWatt, 30Volt Schottky Barrier Diode Device Marking Type Pin Configuration L4P L42 L43 L44 Single Dual Dual Dual Figure 1 Figure 4 Figure 2 Figure 3 SOT-23 A D C Maximum Ratings F ... | Original |
2 pages, |
BAT54C BAT54A BAT54 BAT54S BAT54 abstract |
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| Abstract: BAT54A BAT54A diode configuration (symbol). · Blocking diodes. DESCRIPTION Planar Schottky barrier diodes , are available. 1 Top view Fig.1 L4p BAT54A BAT54A L43 BAT54S BAT54S MLC359 MLC359 MGC421 MGC421 Simplified outline (SOT23) and pin configuration. L44 Fig.4 BAT54C BAT54C diode configuration (symbol). , , halfpage 3 handbook, halfpage 2 n.c. 1 1 BAT54 BAT54 single diode configuration (symbol). 2 2 MLC358 MLC358 MLC357 MLC357 Fig.2 1996 Mar 19 3 handbook, halfpage Fig.5 BAT54S BAT54S diode ... | Original |
5 pages, |
transistor L43 SMD BAT54 Series BAT54A BAT54C BAT54S marking code 10 sot23 BAT54 schottky diode bat54 l44 smd transistor L44 bat54C diode MLC359 SMD DIODE BAT54 DATASHEET smd diode l4p M3D088 M3D088 abstract |
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| Abstract: columns 2 3 BAT54A BAT54A diode configuration (symbol). · Blocking diodes. DESCRIPTION Planar , diodes with different pinning are available. 1 Top view Fig.1 L4p BAT54A BAT54A L43 BAT54S BAT54S MLC359 MLC359 MGC421 MGC421 Simplified outline (SOT23) and pin configuration. L44 Fig.4 BAT54C BAT54C diode , handbook, halfpage 3 handbook, halfpage 2 n.c. 1 1 BAT54 BAT54 single diode configuration , BAT54S BAT54S diode configuration (symbol). Philips Semiconductors Product specification Schottky ... | Original |
5 pages, |
smd diode L44 MLC359 BAT54S BAT54C BAT54A BAT54 smd L4P smd diode l4p M3D088 M3D088 abstract |
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| Abstract: U108D u334 L4P 3 + C123 4.7uF +5V 1 1 C137 C138 1 7 C110 10uF C141 C136 1 , 3 Sense D11 BAT54 BAT54 3 2 L4P GND NC Bypass 2 3 +5V L4P 1 C111 , BAT54 BAT54 L4P +5V VA NC D10 BAT54 BAT54 2 +5V 5 6 7 2 + C124 10uF VD2 VD2 , ,C181,C182,C184, C186,C188,C190 1 C191 22uF 1 C192 10uF Diode 4 D10,D11,D12,D13 BAT54 BAT54 ... | Original |
15 pages, |
ADC14C105 NS7WV125 223514-1 db3 c103 S2011E-4 C143 datasheet BLM31PG500SN1L BAT54 wv4 transistor c114 c186 diode DB3 C122 wv4 diode db3 c113 ADT1-1WT ADC12C080 ADC14C080 ADC12C080 abstract |
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| Abstract: BAT54/A/C/S BAT54/A/C/S 3 CONNECTION DIAGRAMS PACKAGE BAT54 BAT54 L4P SOT-23 TO-236AB (Low) 1 2 3 2 NC 1 MARKING BAT54 BAT54 L4P BAT54C BAT54C L43 BAT54A BAT54A L42 BAT54S BAT54S L44 3 BAT54C BAT54C 2 1 3 3 2 1 BAT54A BAT54A BAT54S BAT54S 1 2 Schottky Barrier Diode Sourced from Process KA Absolute Maximum Ratings* Sym Tstg TJ Wiv IF if iF(surge) PD TA = 25OC unless otherwise noted Parameter Value -55 to +150 +150 25 200 300 600 230 430 Storage Temperature Operating ... | Original |
6 pages, |
Schottky Diode Marking sot-23 marking P2 sot-23 MARKING CODE L4P BAT54S BAT54C BAT54A BAT54 power sot-23 Marking aa BAT54/A/C/S BAT54/A/C/S abstract |
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| ¯ F L3 G1 1 2 3 F 2 F 1 L7 L4 P011G4/B TO-220FP MECHANICAL DATA LM117 LM117 LM117 LM117 external capacitors, it is good practice to add protection diodes, as shown in fig.5. D1 protect the discharging. Figure 5 : Voltage Regulator with Protection Diodes. D1 protect the device against input www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2154-v3.htm |
STMicroelectronics | 21/12/2000 | 11.5 Kb | HTM | 2154-v3.htm |
| * CINV 8 0 .75E-12 75E-12 75E-12 75E-12 L6P 49 48 1.5E-9 L4P 46 45 1.08E-9 08E-9 08E-9 08E-9 L2P 43 42 1.08E-9 08E-9 08E-9 08E-9 www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/bb3.lib |
Spice Models | 18/04/2010 | 108.11 Kb | LIB | bb3.lib |
| .152 Multiwatt11 H (Short leads) L7 H1 Dia.1 S S1 L3 L4 P L1 V E H2 G3 C A B L5 MULT11LHM MULT11LHM MULT11LHM MULT11LHM N G G2 F R R V V L2 V X , allowing the imple - mentation of low leakage diodes, too. It guaran - tees BV CEO > 20V and BV CBO > 50V pro - tection diodes are included to avoid any damage. DC Voltage The maximum operating DC voltage for www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1499-v2.htm |
STMicroelectronics | 14/06/1999 | 24.22 Kb | HTM | 1499-v2.htm |
| .152 Multiwatt11 H (Short leads) L7 H1 Dia.1 S S1 L3 L4 P L1 V E H2 G3 C A B L5 MULT11LHM MULT11LHM MULT11LHM MULT11LHM N G G2 F R R V V L2 V X by top- bottom isolation techniques, allowing the imple - mentation of low leakage diodes, too. It pro - tection diodes are included to avoid any damage. DC Voltage The maximum operating DC voltage for www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/1499.htm |
STMicroelectronics | 25/05/2000 | 27.15 Kb | HTM | 1499.htm |
| .152 Multiwatt11 H (Short leads) L7 H1 Dia.1 S S1 L3 L4 P L1 V E H2 G3 C A B L5 MULT11LHM MULT11LHM MULT11LHM MULT11LHM N G G2 F R R V V L2 V X , allowing the imple - mentation of low leakage diodes, too. It guaran - tees BV CEO > 20V and BV CBO > 50V pro - tection diodes are included to avoid any damage. DC Voltage The maximum operating DC voltage for www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1499.htm |
STMicroelectronics | 02/04/1999 | 24.26 Kb | HTM | 1499.htm |
| .65 3.85 0.144 0.152 Multiwatt11 H (Short leads) L7 H1 Dia.1 S S1 L3 L4 P L1 V E isolation techniques, allowing the imple - mentation of low leakage diodes, too. It guaran - tees BV damaged. On the TDA7360 TDA7360 TDA7360 TDA7360 pro - tection diodes are included to avoid any damage. DC Voltage The www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1499-v1.htm |
STMicroelectronics | 25/05/2000 | 26.09 Kb | HTM | 1499-v1.htm |
| L4 P011G4/B TO-220FP MECHANICAL DATA L78M00 L78M00 L78M00 L78M00 18/19 Information furnished is believed to be as a diode in order to compensate the variation of the Q 1 V BE with the temperature. C www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2146-v3.htm |
STMicroelectronics | 21/12/2000 | 20.65 Kb | HTM | 2146-v3.htm |
| G1 1 2 3 F 2 F 1 L7 L4 P011G4/B TO-220FP MECHANICAL DATA L7900 L7900 L7900 L7900 11/13 DIM transient response. If large capacitors are used, a high current diode from input to output (1N4001 1N4001 1N4001 1N4001 or www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2149-v3.htm |
STMicroelectronics | 21/12/2000 | 20.46 Kb | HTM | 2149-v3.htm |
| L3 G1 1 2 3 F 2 F 1 L7 L4 P011G4/B TO-220FP MECHANICAL DATA L7800 L7800 L7800 L7800 23 Compensation. NOTE: The circuit performs well up to 100KHz NOTE: Q 2 is connected as a diode in loads and an output voltage greater than 6 volts need an external diode (see fig. 33) to protect . The external diode by-passes the current from the IC to ground. V O falls when the light goes www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2143-v3.htm |
STMicroelectronics | 03/11/2000 | 34.95 Kb | HTM | 2143-v3.htm |
| * Library of Burr-Brown Opamps * $Revision: 1.3 $ * $Author: HIRASUNA $ * $Date: 11 May 2000 13:26:32 $ * * * * WELCOME TO * * BURR-BROWN CORPORATION * SPICE BASED MACROMODEL LIBRARY * * 6730 S. TUCSON BLVD. * TUCSON, AZ 85706 * 800-548-6132 * * * * INTRODUCTION www.datasheetarchive.com/files/spicemodels/misc/burr_brn.lib |
Spice Models | 04/09/2012 | 503.79 Kb | LIB | burr_brn.lib |