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l33 thermal

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Lead-Free Parts LUR9653H-30E/L33 DATA SHEET DOC. NO : QW0905-LUR9653H-30E/L33 REV. : A , . LUR9653H-30E/L33 Page 1/5 Package Dimensions R0.7 C1.25 CATHODE 7.62±0.5 ANODE 7.62±0.5 , -30E/L33 Page 2/5 Absolute Maximum Ratings at Ta=25 Ratings Symbol Parameter UNIT UR(H , NO MATERIAL Emitted LUR9653H-30E/L33 AlGaInP/GaP Red Forward Dominant Spectral voltage , Only Page 3/5 PART NO. LUR9653H-30E/L33 Typical Electro-Optical Characteristics Curve UR(H -
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107D LUR9653H-30E/L33 QW0905-LUR9653H-30E/L33 MIL-STD-750 MIL-STD-883 MIL-STD-202
Abstract: Lead-Free Parts LUY9653R-30E/L33 DATA SHEET DOC. NO : QW0905-LUY9653R-30E/L33 REV. : A , . LUY9653R-30E/L33 Page 1/5 Package Dimensions R0.7 C1.25 CATHODE 7.62±0.5 ANODE 7.62±0.5 , -30E/L33 Page 2/5 Absolute Maximum Ratings at Ta=25 Ratings Symbol Parameter UNIT UY(R , NO MATERIAL Emitted LUY9653R-30E/L33 AlGaInP Yellow Forward Dominant Spectral voltage , Ligitek Only PART NO. LUY9653R-30E/L33 Page 3/5 Typical Electro-Optical Characteristics Curve UYR -
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LUY9653R-30E/L33 QW0905-LUY9653R-30E/L33
Abstract: BTW 68 (N) THERMAL RESISTANCES Symbol Value Unit 50 °C/W BTW 68 1.1 °C/W BTW , N IGT VD =12V (DC) R L=33 Tj=25°C MAX 50 mA VGT VD =12V (DC) R L=33 , maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact , (Tamb and T case) for different thermal resistances heatsink + contact (BTW 68 N). 3/5 BTW 68 , variation of thermal impedance versus pulse duration. Fig.6 : Average on-state temperature (BTW 68 N). STMicroelectronics
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BTW 600 n 540 l33 silicon controlled rectifier BTW 69 E81734
Abstract: BTW 69 (N) THERMAL RESISTANCES Symbol Value Unit 50 °C/W BTW 69 0.9 °C/W BTW , N IGT VD =12V (DC) R L=33 Tj=25°C MAX 80 mA VGT VD =12V (DC) R L=33 , maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact , (Tamb and T case) for different thermal resistances heatsink + contact (BTW 69 N). 3/5 BTW 69 , variation of thermal impedance versus pulse duration. Fig.6 : Average on-state temperature (BTW 69 N). STMicroelectronics
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Abstract: BTW 68 (N) THERMAL RESISTANCES Symbol Value Unit 50 °C/W BTW 68 1.1 °C/W BTW , N IGT VD =12V (DC) R L=33 Tj=25°C MAX 50 mA VGT VD =12V (DC) R L=33 , maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact , (Tamb and T case) for different thermal resistances heatsink + contact (BTW 68 N). 3/5 BTW 68 , variation of thermal impedance versus pulse duration. Fig.6 : Average on-state temperature (BTW 68 N). STMicroelectronics
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Abstract: /5 S30xxxH_ THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient , Conditions 14 Igt V d=12V (DC) R l=33£} Tj= 25° C MIN MAX V gt V gd Iqm = 4A (tp = 20 ^s) Unit 16 20 50 mA 30 75 1.5 0.2 2 V d=12V (DC) V d= V drm V d= V drm R l=33 ü Tj= 25° C Tj=125°C Tj , dissipation and maximum allowable tem perature (Tamb and Tease) for different thermal resistances heatsink , -4 : Relative variation of thermal impedance versus pulse duration. Zlh/Rlh Fig.5 : Relative variation of -
OCR Scan
T0220
Abstract: V 1/5 TXN/TYN 0512 -> TXN/TYN 1012 THERMAL RESISTANCES Symbol Value Unit 60 , Conditions Value Unit IGT VD =12V (DC) R L=33 Tj=25°C MAX 15 mA VGT VD =12V (DC) R L=33 Tj=25°C MAX 1.5 V VGD VD =VDRM RL=3.3k Tj= 125°C MIN 0.2 V , maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact , ) for different thermal resistances heatsink + contact (TYN). Fig.5 : Average temperature (TXN). STMicroelectronics
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scr tyn 612 Circuit of SCR TYN 612 SCR TYN 16 A SCR TYN 412 tyn 620 tyn scr datasheet
Abstract: resistance (ESR) SMD ceramic capacitors. The device is thermal protected and current limited to prevent , to the device protection are the Thermal Shut down block which turn-off the regulator when the , . . . . . . . . . . . . . . . . . . . . . . 5 2 Thermal considerations . . . . . . . . . . . . , by: Equation 6 I I PK = I O + -2 5/12 Thermal considerations 2 AN2371 Thermal , TA is the ambient temperature and RthJ-A is the thermal resistance junction to ambient. Considering STMicroelectronics
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ST1S06 C3216X7R1C475K DR73-4R7 GRM32ER61C226KE20L RLF7030T-3R3M4R1 RLF7030T-4R7M3R4
Abstract: SIOxxxH_ THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case tor , =12V (DC) R l=33£} Tj= 25°C MIN MAX V gt V gd tgt V d=12V (DC) R l=33 ü Tj= 25°C Tj=125°C Tj= 25° C MAX MIN , maximum allowable tem perature (Tamb and Tease) tor ditterent thermal resistances heatsink+ contact. P , .4 : Relative variation ot thermal impedance versus pulse duration. Zlh/Rlh \ Q l = 1;i0° \ -N \ T -
OCR Scan
Abstract: 14 C=1e4 pF C=100 pF IND L=33 nH C=100 pF L=6.8 nH NET="AM1" C=100 pF -5 S11, S22 (dB) DB(|S(1,1 , =150 mil Eeff=3.4 Loss=0 F0=2 GHz SUBCKT NET="AM1" IND ID=L2 L=33 nH S21 (dB) 12 -10 11 -15 IND ID=L1 L=3.3 nH CAP ID=C3 C=56 pF 10 DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2 , . Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use , . Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal WJ Communications
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1-800-WJ1-4401
Abstract: (continuous) Junction Temperature Thermal Resistance, Rth Junction Temperature for >106 hours MTTF Operation , C=1e4 pF -5 S11, S22 (dB) DB(|S(1,1)|) (R) C=100 pF IND L=33 nH C=100 pF L=6.8 nH NET="AM1 , ID=TL1 Z0=50 Ohm L=150 mil Eeff=3.4 Loss=0 F0=2 GHz SUBCKT NET="AM1" IND ID=L2 L=33 nH S21 (dB) 12 -10 11 -15 IND ID=L1 L=3.3 nH CAP ID=C3 C=56 pF 10 DB(|S(1,1)|) (R) DB(|S(2,1 , J-STD-020 Land Pattern Mounting Config. Notes 1. Ground / thermal vias are critical for the TriQuint Semiconductor
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a1g dbm MARKING A1G marking a1g sot marking s22 MMIC SOT 89 marking CODE 06 JESD22-A114 JESD22-C101
Abstract: -15 L=33 nH C=100 pF L=6.8 nH NET="AG101" C=100 pF 11 -20 10 0.6 0.7 0.8 0.9 1 Frequency , SUBCKT NET="AG101" IND ID=L2 L=33 nH S21 (dB) 12 -10 11 -15 IND ID=L1 L=3.3 nH , . Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use , . Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal , ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC WJ Communications
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Abstract: (2,2)|) (R) C=100 pF IND L=33 nH C=100 pF L=6.8 nH NET="AM1" C=100 pF S21 (dB) 13 -10 , TLINP ID=TL1 Z0=50 Ohm L=150 mil Eeff=3.4 Loss=0 F0=2 GHz SUBCKT NET="AM1" IND ID=L2 L=33 nH S21 (dB) 12 -10 11 -15 IND ID=L1 L=3.3 nH CAP ID=C3 C=56 pF 10 DB(|S(1,1)|) (R , convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) 1. Ground WJ Communications
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Abstract: DB(|S(1,1)|) (R) 13 DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) -10 12 -15 11 -20 L=33 , ID=L2 L=33 nH CAP ID=C3 C=56 pF IND ID=L1 L=3.3 nH DB(|S(1,1)|) (R) DB(|S(2,1)|) (L , Standard: JEDEC Standard J-STD-020 ¤ Mounting Config. Notes Thermal Specifications Rating -40 to +85 qC 88 qC/W 113 qC Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) 1. The thermal resistance is referenced from the hottest part of the junction to the WJ Communications
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AG102 AG102-G marking code A1G AG102-PCB
Abstract: )|) (L) DB(|S(2,2)|) (R) S21 (dB) 13 -10 12 -15 L=33 nH C=100 pF L=6.8 nH NET="AG102" C , 14 0 13 -5 CAP ID=C1 C=3.9 pF SUBCKT NET="AG102" IND ID=L2 L=33 nH S21 (dB) 12 -10 11 -15 IND ID=L1 L=3.3 nH CAP ID=C3 C=56 pF 10 DB(|S(1,1)|) (R) DB(|S(2,1 , -020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device , thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink WJ Communications
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Abstract: 400 600 800 1000 V 1/5 TXN/TYN 058 (G) -> TXN/TYN 1008 (G) THERMAL RESISTANCES , L=33 Tj=25°C MAX mA VGT VD =12V (DC) R L=33 Tj=25°C MAX 1.5 V VGD , average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal , thermal resistances heatsink + contact (TYN). P (W) 10 360 -105 5 = 60 o 2 -100 , .7 : Relative variation of thermal impedance versus pulse duration. 0 0 10 20 30 40 50 60 70 80 90 STMicroelectronics
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SCR TYN 808 tyn 058 tyn scr TYN 058 datasheet tyn058
Abstract: L=33 nH C=100 pF C=100 pF NET="AG101" L=6.8 nH S11, S22 (dB) 14 C=1e4 pF 10 , ID=L2 L=33 nH CAP ID=C3 C=56 pF IND ID=L1 L=3.3 nH 10 S11, S22 (dB) CA P C=1e4 pF , +85 qC 88 qC / W 105 qC Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) 1. The thermal resistance is referenced from the hottest part of the junction to the , . Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm WJ Communications
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AG101-G AG101-PCB
Abstract: Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature Thermal Resistance , (dB) 13 12 11 10 0.6 -10 -15 -20 -25 L=33 nH C=100 pF L=6.8 nH NET= "AG101" C=100 pF 0.7 , =3.4 Loss=0 F0=2 GHz CAP ID=C1 C=3.9 pF SUBCKT NET="AG101" IND ID=L2 L=33 nH IND ID=L1 L=3.3 nH , Standard J-STD-020 Land Pattern Mounting Config. Notes 1. Ground / thermal vias are critical for the , the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to TriQuint Semiconductor
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MMIC "SOT 89" marking 12 rf sot89 a1g sot89 a1g mmic a1g mmic C5 sot 89 1E4 SOT89
Abstract: (continuous) Junction Temperature Thermal Resistance Junction Temperature for >106 hours MTTF Operation of , ) S21 (dB) 13 -10 12 -15 L=33 nH C=100 pF L=6.8 nH NET="AG102" C=100 pF 11 -20 , -5 S11, S22 (dB) CAP ID=C1 C=3.9 pF SUBCKT NET="AG102" IND ID=L2 L=33 nH S21 (dB) 12 -10 11 -15 IND ID=L1 L=3.3 nH CAP ID=C3 C=56 pF 10 DB(|S(1,1)|) (R) DB(|S(2,1)|) (L , Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device TriQuint Semiconductor
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TQP3M9028
Abstract: ) DB(|S(2,2)|) (R) -10 12 -15 11 -20 L=33 nH C=100 pF C=100 pF NET="AM1" L , ID=TL1 Z0=50 Ohm L=150 mil Eeff=3.4 Loss=0 F0=2 GHz IND ID=L2 L=33 nH CAP ID=C3 C=56 pF IND ID=L1 L=3.3 nH DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) S11, S22 (dB) CAP C=1e4 pF DB , Thermal Specifications Parameter Rating Mounting Config. Notes 10000 -40 to +85 qC 88 qC/W 116 qC Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2 WJ Communications
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AM1 marking
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