NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Lead-Free Parts LUY9653R-30E/L33 DATA SHEET DOC. NO : QW0905-LUY9653R-30E/L33 REV. : A , LUY9653R-30E/L33 Page 1/5 Package Dimensions R0.7 C1.25 CATHODE 7.62�5 ANODE 7.62�5 3.0 , LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LUY9653R-30E/L33 Page 2/5 Absolute , LUY9653R-30E/L33 AlGaInP Yellow Forward Dominant Spectral voltage wave halfwidth @20mA(V) length , LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LUY9653R-30E/L33 Page 3/5 Typical ... | Original |
6 pages, |
107D l33 thermal LUY9653R-30E/L33 LUY9653R-30E/L33 abstract |
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| Abstract: Lead-Free Parts LUR9653H-30E/L33 DATA SHEET DOC. NO : QW0905-LUR9653H-30E/L33 REV. : A , LUR9653H-30E/L33 Page 1/5 Package Dimensions R0.7 C1.25 CATHODE 7.62�5 ANODE 7.62�5 3.0 , 75% 100% LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LUR9653H-30E/L33 Page , NO MATERIAL Emitted LUR9653H-30E/L33 AlGaInP/GaP Red Forward Dominant Spectral voltage , Page 3/5 PART NO. LUR9653H-30E/L33 Typical Electro-Optical Characteristics Curve UR(H) CHIP ... | Original |
6 pages, |
107D LUR9653H-30E/L33 LUR9653H-30E/L33 abstract |
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| Abstract: NPN 1 GHz wideband transistor " 3M^7 BF747W BF747W PHILIPS INTERNATIONAL SbE T> m 711DflEb DD44170 DD44170 L33 «PHIN DESCRIPTION Silicon NPN transistor in a plastic SOT323 (S-mini) envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. The BF747W BF747W uses the same crystal as the SOT23 version, BF747 BF747. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VcBO , ; VCE = 10 V; f = 100 MHz - 20 - dB f|h l-s thermal resistance from junction to soldering point note 1 ... | OCR Scan |
1 pages, |
UBC370 transistor KIN BF747W BF747 l33 thermal transistor L33 L33 TRANSISTOR DD44170 BF747W abstract |
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| Abstract: BTW 68 (N) THERMAL RESISTANCES Symbol Value Unit 50 °C/W BTW 68 1.1 °C/W BTW , N IGT VD =12V (DC) R L=33 Tj=25°C MAX 50 mA VGT VD =12V (DC) R L=33 , maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact , and T case) for different thermal resistances heatsink + contact (BTW 68 N). 3/5 BTW 68 (N , variation of thermal impedance versus pulse duration. Fig.6 : Average on-state temperature (BTW 68 N). ... | Original |
10 pages, |
silicon controlled rectifier BTW 69 n 540 l33 BTW 600 E81734 E81734 abstract |
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| Abstract: V 1/5 TXN/TYN 0512 -> TXN/TYN 1012 THERMAL RESISTANCES Symbol Value Unit 60 , Conditions Value Unit IGT VD =12V (DC) R L=33 Tj=25°C MAX 15 mA VGT VD =12V (DC) R L=33 Tj=25°C MAX 1.5 V VGD VD =VDRM RL=3.3k Tj= 125°C MIN 0.2 V , dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + , and T case) for different thermal resistances heatsink + contact (TYN). Fig.5 : Average ... | Original |
5 pages, |
tyn scr datasheet tyn scr tyn 620 tyn 5 SCR TYN 412 SCR TYN 16 A scr tyn 612 E81734 E81734 abstract |
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| Abstract: BTW 69 (N) THERMAL RESISTANCES Symbol Value Unit 50 °C/W BTW 69 0.9 °C/W BTW , N IGT VD =12V (DC) R L=33 Tj=25°C MAX 80 mA VGT VD =12V (DC) R L=33 , maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact , and T case) for different thermal resistances heatsink + contact (BTW 69 N). 3/5 BTW 69 (N , variation of thermal impedance versus pulse duration. Fig.6 : Average on-state temperature (BTW 69 N). ... | Original |
5 pages, |
E81734 btw 600 E81734 abstract |
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| Abstract: BTW 68 (N) THERMAL RESISTANCES Symbol Value Unit 50 °C/W BTW 68 1.1 °C/W BTW , N IGT VD =12V (DC) R L=33 Tj=25°C MAX 50 mA VGT VD =12V (DC) R L=33 , maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact , and T case) for different thermal resistances heatsink + contact (BTW 68 N). 3/5 BTW 68 (N , variation of thermal impedance versus pulse duration. Fig.6 : Average on-state temperature (BTW 68 N). ... | Original |
5 pages, |
BTW 600 E81734 E81734 abstract |
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| Abstract: 100ppm Symmetry HH=52.5/37.5 H= 45/55 Blank= 40/60 Supply Voltage L=3.3 Blank = 5V Temperature Range , Environmental & Mechanical Mechanical Mil STD 202 Method 213 Cond E Shock Thermal Mil STD 883 Method 1011 ... | Original |
1 pages, |
VFAC3 RH20 L33 SMD datasheet abstract |
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| Abstract: Method 213 Cond E Shock Thermal Mil STD 883 Method 1011 Shock Cond A Vibration MIL-STD-883 MIL-STD-883 Method , Series Stability S=20ppm Blank=50ppm Supply V L=3.3 Blank =5.0 Temp Range 1=-40+85 Blank= Std ... | Original |
1 pages, |
VF594 valpey RH20 VF594 abstract |
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| Abstract: Cond E Shock Thermal Mil STD 883 Method 1011 Shock Cond A Vibration MIL-STD-883 MIL-STD-883 Method 2007 , S=20ppm Blank=50ppm Supply V L=3.3 Blank =5.0 Temp Range 1=-40+85 Blank= Std Pulling Range Frequency ... | Original |
1 pages, |
VF594 RH20 VF594 abstract |
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| .75 Symbol Test Conditions Quadrant Suffix Unit BW CW I GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MIN 2 1 mA MAX 50 35 V GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MAX 1.5 V V GD V D =V DRM R L =3.3k W CHARACTERISTICS THERMAL RESISTANCES BTA16 BTA16 BTA16 BTA16 BW/CW / BTB16 BTB16 BTB16 BTB16 BW/CW 2/5 ORDERING INFORMATION Package I T(RMS) V DRM / V dissipation and maximum allowable temperatures (T amb and T case ) for different thermal resistances heatsink temperatures (T amb and T case ) for different thermal resistances heatsink + contact (BTB). Fig.4 : RMS on www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2931.htm |
STMicroelectronics | 02/04/1999 | 6.35 Kb | HTM | 2931.htm |
| I GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MIN 2 1 mA MAX 50 35 V GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj=125 5 C THERMAL RESISTANCES BTA12 BTA12 BTA12 BTA12 BW/CW / BTB12 BTB12 BTB12 BTB12 BW/CW 2/5 ORDERING INFORMATION Package I T(RMS) V DRM / V different thermal resistances heatsink + contact (BTA). Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (T amb and T case ) for different thermal resistances www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2929-v1.htm |
STMicroelectronics | 20/10/2000 | 8.48 Kb | HTM | 2929-v1.htm |
| L =33 W Tj=25 5 C I-II-III MAX 5 10 mA V GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj=110 5 C I-II-III MIN 0.2 V tgt V D =V DRM I ). ELECTRICAL CHARACTERISTICS THERMAL RESISTANCES BTA06 BTA06 BTA06 BTA06 TW/SW / BTB06 BTB06 BTB06 BTB06 TW/SW 2/5 ORDERING INFORMATION different thermal resistances heatsink + contact (BTA). Fig.4 : RMS on-state current versus case amb and T case ) for different thermal resistances heatsink + contact (BTB). BTA06 BTA06 BTA06 BTA06 TW/SW / BTB06 BTB06 BTB06 BTB06 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2921-v1.htm |
STMicroelectronics | 20/10/2000 | 8.47 Kb | HTM | 2921-v1.htm |
| =12V (DC) R L =33 W Tj=25 5 C MAX 15 mA V GT V D =12V (DC) R L =33 W Tj=25 5 C MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj= 125 5 C MIN 0.2 V tgt V D =V DRM I G = 40mA d CHARACTERISTICS THERMAL RESISTANCES TXN/TYN 0512 -> TXN/TYN 1012 2/5 Fig.3 : Maximum average power dissipation and maximum allowable temperatures (T amb and T case ) for different thermal resistances amb and T case ) for different thermal resistances heatsink + contact (TXN). Fig.5 : Average on www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3217-v1.htm |
STMicroelectronics | 20/10/2000 | 8.13 Kb | HTM | 3217-v1.htm |
| /W BTW 69 N 0.8 Symbol Test Conditions Value Unit BTW 69 BTW 69 N I GT V D =12V (DC) R L =33 W Tj=25 5 C MAX 80 mA V GT V D =12V (DC) R L =33 W Tj=25 5 C MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj= 125 5 C MIN . ELECTRICAL CHARACTERISTICS THERMAL RESISTANCES BTW 69 (N) 2/5 Fig.3 : Maximum average power dissipation and maximum allowable temperatures (T amb and T case ) for different thermal resistances heatsink amb and T case ) for different thermal resistances heatsink + contact (BTW 69). Package I T(RMS) V DRM www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2945.htm |
STMicroelectronics | 02/04/1999 | 6.28 Kb | HTM | 2945.htm |
| Unit A B I GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MAX 100 50 mA IV MAX 150 100 V GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III-IV MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj=125 5 C I-II-III-IV MIN 0 = 20 m s) V GM = 16V (tp = 20 m s). ELECTRICAL CHARACTERISTICS THERMAL RESISTANCES BTA26 BTA26 BTA26 BTA26 A/B / BTB26 BTB26 BTB26 BTB26 B amb and T case ) for different thermal resistances heatsink + contact (BTB). Fig.3 : Maximum RMS power different thermal resistances heatsink + contact (BTA). BTA26 BTA26 BTA26 BTA26 A/B / BTB26 BTB26 BTB26 BTB26 B 3/5 Fig.8 : Relative variation www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2933-v2.htm |
STMicroelectronics | 14/06/1999 | 6.42 Kb | HTM | 2933-v2.htm |
| Unit A B I GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MAX 100 50 mA IV MAX 150 100 V GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III-IV MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj=125 5 C I-II-III-IV MIN 0 = 20 m s) V GM = 16V (tp = 20 m s). ELECTRICAL CHARACTERISTICS THERMAL RESISTANCES BTA41 BTA41 BTA41 BTA41 A/B / BTB41 BTB41 BTB41 BTB41 B amb and T case ) for different thermal resistances heatsink + contact (BTA). Fig.3 : Maximum RMS power different thermal resistances heatsink + contact (BTB). BTA41 BTA41 BTA41 BTA41 A/B / BTB41 BTB41 BTB41 BTB41 B 3/5 Fig.8 : Relative variation www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2934-v2.htm |
STMicroelectronics | 14/06/1999 | 6.42 Kb | HTM | 2934-v2.htm |
| Quadrant Suffix Unit T D S A I GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MAX 5 5 10 10 mA IV MAX 5 10 10 25 V GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III-IV MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj=110 CHARACTERISTICS THERMAL RESISTANCES BTA04 BTA04 BTA04 BTA04 T/D/S/A / BTB04 BTB04 BTB04 BTB04 T/D/S/A 2/5 Package I T(RMS) V DRM / V RRM Sensitivity power dissipation and maximum allowable temperatures (T amb and T case ) for different thermal different thermal resistances heatsink + contact (BTB). BTA04 BTA04 BTA04 BTA04 T/D/S/A / BTB04 BTB04 BTB04 BTB04 T/D/S/A 3/5 Fig.6 : Relative www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2917-v1.htm |
STMicroelectronics | 02/04/1999 | 6.35 Kb | HTM | 2917-v1.htm |
| .3 Symbol Test Conditions Quadrant Suffix Unit BW CW I GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MIN 2 1 mA MAX 50 35 V GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MAX 1.5 V V GD V D =V DRM R L =3.3k W CHARACTERISTICS THERMAL RESISTANCES BTA20 BTA20 BTA20 BTA20 BW/CW / BTB20 BTB20 BTB20 BTB20 BW/CW 2/5 ORDERING INFORMATION Package I T(RMS) V DRM / V dissipation and maximum allowable temperatures (T amb and T case ) for different thermal resistances heatsink temperatures (T amb and T case ) for different thermal resistances heatsink + contact (BTB). Fig.4 : RMS on www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2932-v2.htm |
STMicroelectronics | 14/06/1999 | 6.3 Kb | HTM | 2932-v2.htm |
| .8 Symbol Test Conditions Quadrant Suffix Unit A B I GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III MAX 100 50 mA IV MAX 150 100 V GT V D =12V (DC) R L =33 W Tj=25 5 C I-II-III-IV MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj=125 5 C I-II-III-IV MIN 0.2 V tgt V D =V DRM I G = 20 m s). ELECTRICAL CHARACTERISTICS THERMAL RESISTANCES BTA26 BTA26 BTA26 BTA26 A/B / BTB26 BTB26 BTB26 BTB26 B 2/5 ORDERING temperatures (T amb and T case ) for different thermal resistances heatsink + contact (BTB). Fig.3 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2933-v1.htm |
STMicroelectronics | 20/10/2000 | 8.57 Kb | HTM | 2933-v1.htm |