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ISL28210FBZ-T7 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28210FBZ Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28210FBZ-T7A Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28210FBZ-T13 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28110FBZ-T13 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28110FBZ Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy

jfet spice model

Catalog Datasheet MFG & Type PDF Document Tags

vertical JFET

Abstract: diode c23 in the subcircuit because the built-in gate-to-drain diode of the SPICE II JFET model is , . The subcircuit works nicely with the standard SPICE II software, providing a model with all the , design. This technique can be used to model power MOSFETs with any version of the SPICE II program , third-quadrant current to flow in DBODY. So, we effectively delete the SPICE II model's built-in diode by , round-out the subcircuit, a resistor value is chosen for the JFET drain of the SPlCE II model to represent
Harris Semiconductor
Original

IRF130

Abstract: intersil jfet subcircuit because the built-in gate-to-drain diode of the SPICE II JFET model is inconvenient when it comes , . The subcircuit works nicely with the standard SPICE II software, providing a model with all the , design. This technique can be used to model power MOSFETs with any version of the SPICE II program , to flow in DBODY. So, we effectively delete the SPICE II model's built-in diode by setting its , subcircuit, a resistor value is chosen for the JFET drain of the SPlCE II model to represent the series
Intersil
Original

vertical JFET

Abstract: POWER MOSFET APPLICATION NOTE the JFET, errors will exist in the output waveforms predicted by the standard SPICE II model. To , subcircuit because the built-in gate-to-drain diode of the SPICE II JFET model is inconvenient when it comes , nicely with the standard SPICE II software, providing a model with all the terminal characteristics of a , be used to model power MOSFETs with any version of the SPICE II program presently available, without , OF THE POWER MOSFET IS MADE BY COMBINING SPICE II MODEL ELEMENTS WITH SOFTWARE SPECIFIED
Fairchild Semiconductor
Original

Power MOSFET Switching Waveforms A New Insight

Abstract: jfet cascode . The subcircuit works nicely with the standard SPICE II software, providing a model with all the , design. This technique can be used to model power MOSFETs with any version of the SPICE II program , for the JFET drain of the SPlCE II model to represent the series resistance of the n-drain region of , EQUIVALENT CIRCUIT OF THE POWER MOSFET IS MADE BY COMBINING SPICE II MODEL ELEMENTS WITH SOFTWARE , SPICE II model. To correct the situation, the added subcircuit includes a current-controlled current
Fairchild Semiconductor
Original

1000 volt mosfet

Abstract: Power MOSFET Switching Waveforms A New Insight, H , Jr. Abstract An accurate power-MOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE-2 software and MOSFET terminal measurements. SPICE-2 is the circuit simulation package of choice for this work because of its universal , suitable for use with the SPICE CAD program, has been demonstrated. The model is compatible with all , Harris Semiconductor No. AN9209.1 Harris Power MOSFETs April 1994 A SPICE-2 SUBCIRCUIT
Harris Semiconductor
Original
RFP15N15 1000 volt mosfet Power MOSFET Switching Waveforms A New Insight, H Harris Semiconductor jfet Power MOSFET Switching Waveforms A New Insight Depletion MOSFET 20V

NONLINEAR MODEL LDMOS

Abstract: Circuit Representation Schematic representation of Spice Model showing Mosfet and Jfet. Applies to , 350 S imulated 375 400 Slide 6 Steps for Spice Extraction DC Model. IV curve matching n , order to generate Spice models Slide 7 DC Model n n n n Good to know Gate Length , series with Jfet. Spice - Berkeley 2G.6 Level 1. 6 5 4 ID IN AMPS n 3 2 1 0 , the Jfet. Slide 10 AC Model Take capacitance measurements of Coss, Ciss and Crss Vs bias
Polyfet RF Devices
Original
NONLINEAR MODEL LDMOS

intersil jfet

Abstract: RFP15N15 available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE , behavior consistent with SPICE-2 limitations; hence it will differ from the physical model as suggested , 0 0.0 An equivalent-circuit model for power-MOSFETs, that is suitable for use with the SPICE CAD program, has been demonstrated. The model is compatible with all versions of SPICE presently , A Spice-2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note
Intersil
Original
intersil jfet ISO9000

Power MOSFET Switching Waveforms A New Insight, H

Abstract: RFP15N15 ) utho Discussion An accurate power-MOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE-2 software and MOSFET , consistent with SPICE-2 limitations; hence it will differ from the physical model as suggested by Wheatley , the SPICE CAD program, has been demonstrated. The model is compatible with all versions of SPICE , A Spice-2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note
Fairchild Semiconductor
Original
AN-7509 lateral mos JFET spice model RFP15 7509

ISS 355

Abstract: A1056 , 1991 LT1056 Improved JFET Op Amp Macromodel Slews Asymmetrically Walt Jung SPICE macromodels for op , Boyle type model with P-channel JFET input devices, J1 and J2. As this type (or similar input structure , (edited) symmetric case. Actually, only one SPICE model element is added to produce the asymmetric SR as , LT1056 model is contained on the LTC SPICE diskette. 12 8 4 o -8 -12 0 1 2 3 4 5 TIME (us) DN43-F2A , this regard. A case in point is that of the available P-channel JFET input op amps, many which have a
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OCR Scan
ISS 355 A1056 dn432 The Monolithic Operational Amplifier A Tutorial op amp model Spice OP-16 5000E-11 20Q0E-04 8000E-04 SC-14 DN43-2

Power MOSFET Switching Waveforms A New Insight

Abstract: RFP15N15 A Spice-2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note October 1999 AN9209.2 Abstract Discussion An accurate power-MOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE , behavior consistent with SPICE-2 limitations; hence it will differ from the physical model as suggested , model is compatible with all versions of SPICE presently available without modification to the program
Intersil
Original

DIODE H5 c2

Abstract: UHC MOS provides a subcircuit model which is compatible with SPICE-2 software and MOSFET terminal measurements , SPICE-2 limitations; hence it will differ from the physical model as suggested by Wheatley, et al1 , FIGURE 1. SPICE-2 SUBCIRCUIT FOR POWER MOSFET SIMULATION NOTE: If the JFET source voltage, E1, is , , that is suitable for use with the SPICE CAD program, has been demonstrated. The model is compatible , A Spice-2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note
Fairchild Semiconductor
Original
DIODE H5 c2 UHC MOS AN75

an104 siliconix

Abstract: TO-226A , where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. SPICE is , only important when modeling the JFET as a switch. b. SPICE identifies depletionmode FETs (all JFETs , GASFET, not the JFET model. For the parameter IS, refer to the Gate Operating Current for the particular , AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following , often employ default parameters that rightfully need to be extracted. Be aware that SPICE parameters
Temic Semiconductors
Original
2N4391 2N4416 2N4339 an104 siliconix TO-226A U421 jfet Siliconix AN104 SILICONIX 2N4391 SST310 spice model SST111 SST4416 SST202

Siliconix J310

Abstract: GASFET MODEL statement is the GASFET; otherwise it is the JFET. Introduction SPICE is the de facto , negative VTO. When ALPHA and CDS are offered, the PSPice model used is the GASFET, not the JFET model , AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly , parameters that rightfully need to be extracted. Be aware that SPICE parameters for any semiconductor , critically-important parameters, RS and RD. The following table of SPICE parameters has been extracted from
Temic Semiconductors
Original
Siliconix J310 GASFET J111 spice model 2N4339 Spice Siliconix JFET U310 spice model SST310 SST176 2N5116

J111 spice model

Abstract: Siliconix AN104 MODEL statement is the GASFET; otherwise it is the JFET. Introduction SPICE is the de facto , negative VTO. When ALPHA and CDS are offered, the PSPice model used is the GASFET, not the JFET model , AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly , parameters that rightfully need to be extracted. Be aware that SPICE parameters for any semiconductor , parameters, RS and RD. The following table of SPICE parameters has been extracted from measurements-none
Siliconix
Original
U310 2n4416 jfet datasheet jfet J111 transistor application note jfet J111 transistor PSpice 2N4416 Siliconix

J111 spice model

Abstract: U310 spice model MODEL statement is the GASFET; otherwise it is the JFET. Introduction SPICE is the de facto , negative VTO. When ALPHA and CDS are offered, the PSPice model used is the GASFET, not the JFET model , AN104 SPICE Parameters for Select JFETs Ed Oxner The following table of parameters will input , parameters that rightfully need to be extracted. Be aware that SPICE parameters for any semiconductor , critically-important parameters, RS and RD. The following table of SPICE parameters has been extracted from
Temic Semiconductors
Original
HC-49/pspice model 2n4391 spice J176 oxner J111 J211

5962R8961002VHA

Abstract: rh1499mw ) SEE Neutron n/cm2 SPICE model WCCA RH101ADICE RH101ADICE 200K 200K 200K 200K 100K 100K , Neutron n/cm2 Planned Planned Planned SPICE model WCCA RH DICE InsideTM Description Dual Micropower , (3) Note(3) Note(3) Note(3) Note(4) Note(4) Neutron n/cm2 Planned Planned Planned Planned SPICE model , EAR99 EAR99 ITAR ITAR ITAR ITAR TID rad(Si) ELDRS rad(Si) SEE Neutron n/cm2 SPICE model WCCA RH DICE , ) Note(8) Note(8) Note(8) Neutron n/cm2 Planned Planned Planned Planned Planned Planned SPICE model WCCA
Linear Technology
Original
RH108AW 5962R8961002VHA rh1499mw RH1009MH TID RADIATION TEST OF OP. AMP 5962R8961002VXC 1X10E12 LF198H LM101AH LM101AJ8 LM101AW RH101AH RH101AJ8

op amp 741 model PSpice code

Abstract: op amp 741 model PSpice program SPICE (or one of its many derivatives), and modern day op amps, including bipolar, JFET, and , need is just a good op amp model, and SPICE. More likely, there will always be some uncertainties, so , transistor types are accommodated via the SPICE transistor model parameters of J1/J2, M1/M2, etc. The , Application Note 48 November 1991 Using the LTC Op Amp Macromodels Getting the Most from SPICE , the Linear Technology SPICE macromodel library. It assumes little if any prior knowledge of this
Linear Technology
Original
LTC1050 op amp 741 model PSpice code op amp 741 model PSpice DC-M4 diode AN4820 MAR 732 op amp 741 model Spice 4902E-10 7124E-04 0000E 0000E-11 0664E 9900E

99c14

Abstract: AN-117 OP-42 Advanced SPICE Macro-model possible only those parameters necessary to the JFET model are specified, that is the threshold voltage VTO , the proper input bias current. All other JFET parameters are left at the model default values, most of , modelled with external circuit elements. For example, no gate capacitance is specified for the JFET model , 02062-9106 â'¢ 617/329-4700 OP-42 Advanced SPICE Macro-Model by Joe Buxton INTRODUCTION This application note describes the SPICE macro-model for the OP-42 high-speed, fast-settling precision operational
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OCR Scan
AN-117 99c14 AN-117 OP-42 Advanced SPICE Macro-model

Resistance r28

Abstract: AN-117 possible only those parameters necessary to the JFET model are specified, that is the threshold voltage VTO , the proper input bias current. All other JFET parameters are left at the model default values, most of , modelled with external circuit elements. For example, no gate capacitance is specified for the JFET model , , MASSACHUSETTS 02062-9106 â'¢ 617/329-4700 OP-42 Advanced SPICE Macro-Model by Joe Buxton INTRODUCTION This application note describes the SPICE macro-model for the OP-42 high-speed, fast-settling precision operational
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OCR Scan
Resistance r28 AR2425 OP-42s matched pair JFET 2E15 3E-15 AT53MHZ 261E-6 171E-6 181E-6 58E-11

SPICE PARAMETER, sanyo, bipolar transistor

Abstract: CPH5901 CPH5901 Base Emitter/Drain Source NPN-TR J-FET Gate Collector Schematic of CPH5901 SPICE PARAMETER N JFET Parameter Value Unit Parameter Value Unit VTO BETA LAMBDA RD RS RG IS N -0.56 34.0m 17.0m 0.64 0.64 0.02 0.80f 1.07 V CGD CGS 8.00p 8.00p F PB MJ FC 0.42 0.28 0.5 V A/V V 2 -1 ohm ohm ohm A IDSS= 11mA , SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit
SANYO Electric
Original
SPICE PARAMETER, sanyo, bipolar transistor bipolar junction transistor transistor ne 107
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