Top Results
jfet spice model
Catalog Datasheet  MFG & Type  Document Tags  

vertical JFETAbstract: diode c23 in the subcircuit because the builtin gatetodrain diode of the SPICE II JFET model is , . The subcircuit works nicely with the standard SPICE II software, providing a model with all the , design. This technique can be used to model power MOSFETs with any version of the SPICE II program , thirdquadrant current to flow in DBODY. So, we effectively delete the SPICE II model's builtin diode by , roundout the subcircuit, a resistor value is chosen for the JFET drain of the SPlCE II model to represent 
Harris Semiconductor Original 


IRF130Abstract: intersil jfet subcircuit because the builtin gatetodrain diode of the SPICE II JFET model is inconvenient when it comes , . The subcircuit works nicely with the standard SPICE II software, providing a model with all the , design. This technique can be used to model power MOSFETs with any version of the SPICE II program , to flow in DBODY. So, we effectively delete the SPICE II model's builtin diode by setting its , subcircuit, a resistor value is chosen for the JFET drain of the SPlCE II model to represent the series 
Intersil Original 


vertical JFETAbstract: POWER MOSFET APPLICATION NOTE the JFET, errors will exist in the output waveforms predicted by the standard SPICE II model. To , subcircuit because the builtin gatetodrain diode of the SPICE II JFET model is inconvenient when it comes , nicely with the standard SPICE II software, providing a model with all the terminal characteristics of a , be used to model power MOSFETs with any version of the SPICE II program presently available, without , OF THE POWER MOSFET IS MADE BY COMBINING SPICE II MODEL ELEMENTS WITH SOFTWARE SPECIFIED 
Fairchild Semiconductor Original 


Power MOSFET Switching Waveforms A New InsightAbstract: jfet cascode . The subcircuit works nicely with the standard SPICE II software, providing a model with all the , design. This technique can be used to model power MOSFETs with any version of the SPICE II program , for the JFET drain of the SPlCE II model to represent the series resistance of the ndrain region of , EQUIVALENT CIRCUIT OF THE POWER MOSFET IS MADE BY COMBINING SPICE II MODEL ELEMENTS WITH SOFTWARE , SPICE II model. To correct the situation, the added subcircuit includes a currentcontrolled current 
Fairchild Semiconductor Original 


1000 volt mosfetAbstract: Power MOSFET Switching Waveforms A New Insight, H , Jr. Abstract An accurate powerMOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE2 software and MOSFET terminal measurements. SPICE2 is the circuit simulation package of choice for this work because of its universal , suitable for use with the SPICE CAD program, has been demonstrated. The model is compatible with all , Harris Semiconductor No. AN9209.1 Harris Power MOSFETs April 1994 A SPICE2 SUBCIRCUIT 
Harris Semiconductor Original 

RFP15N15 1000 volt mosfet Power MOSFET Switching Waveforms A New Insight, H Harris Semiconductor jfet Power MOSFET Switching Waveforms A New Insight Depletion MOSFET 20V 
NONLINEAR MODEL LDMOSAbstract: Circuit Representation Schematic representation of Spice Model showing Mosfet and Jfet. Applies to , 350 S imulated 375 400 Slide 6 Steps for Spice Extraction DC Model. IV curve matching n , order to generate Spice models Slide 7 DC Model n n n n Good to know Gate Length , series with Jfet. Spice  Berkeley 2G.6 Level 1. 6 5 4 ID IN AMPS n 3 2 1 0 , the Jfet. Slide 10 AC Model Take capacitance measurements of Coss, Ciss and Crss Vs bias 
Polyfet RF Devices Original 

NONLINEAR MODEL LDMOS 
intersil jfetAbstract: RFP15N15 available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE , behavior consistent with SPICE2 limitations; hence it will differ from the physical model as suggested , 0 0.0 An equivalentcircuit model for powerMOSFETs, that is suitable for use with the SPICE CAD program, has been demonstrated. The model is compatible with all versions of SPICE presently , A Spice2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note 
Intersil Original 

intersil jfet ISO9000 
Power MOSFET Switching Waveforms A New Insight, HAbstract: RFP15N15 ) utho Discussion An accurate powerMOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE2 software and MOSFET , consistent with SPICE2 limitations; hence it will differ from the physical model as suggested by Wheatley , the SPICE CAD program, has been demonstrated. The model is compatible with all versions of SPICE , A Spice2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note 
Fairchild Semiconductor Original 

AN7509 lateral mos JFET spice model RFP15 7509 
ISS 355Abstract: A1056 , 1991 LT1056 Improved JFET Op Amp Macromodel Slews Asymmetrically Walt Jung SPICE macromodels for op , Boyle type model with Pchannel JFET input devices, J1 and J2. As this type (or similar input structure , (edited) symmetric case. Actually, only one SPICE model element is added to produce the asymmetric SR as , LT1056 model is contained on the LTC SPICE diskette. 12 8 4 o 8 12 0 1 2 3 4 5 TIME (us) DN43F2A , this regard. A case in point is that of the available Pchannel JFET input op amps, many which have a 
 OCR Scan 

ISS 355 A1056 dn432 The Monolithic Operational Amplifier A Tutorial op amp model Spice OP16 5000E11 20Q0E04 8000E04 SC14 DN432 
Power MOSFET Switching Waveforms A New InsightAbstract: RFP15N15 A Spice2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note October 1999 AN9209.2 Abstract Discussion An accurate powerMOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE , behavior consistent with SPICE2 limitations; hence it will differ from the physical model as suggested , model is compatible with all versions of SPICE presently available without modification to the program 
Intersil Original 


DIODE H5 c2Abstract: UHC MOS provides a subcircuit model which is compatible with SPICE2 software and MOSFET terminal measurements , SPICE2 limitations; hence it will differ from the physical model as suggested by Wheatley, et al1 , FIGURE 1. SPICE2 SUBCIRCUIT FOR POWER MOSFET SIMULATION NOTE: If the JFET source voltage, E1, is , , that is suitable for use with the SPICE CAD program, has been demonstrated. The model is compatible , A Spice2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note 
Fairchild Semiconductor Original 

DIODE H5 c2 UHC MOS AN75 
an104 siliconixAbstract: TO226A , where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. SPICE is , only important when modeling the JFET as a switch. b. SPICE identifies depletionmode FETs (all JFETs , GASFET, not the JFET model. For the parameter IS, refer to the Gate Operating Current for the particular , AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following , often employ default parameters that rightfully need to be extracted. Be aware that SPICE parameters 
Temic Semiconductors Original 

2N4391 2N4416 2N4339 an104 siliconix TO226A U421 jfet Siliconix AN104 SILICONIX 2N4391 SST310 spice model SST111 SST4416 SST202 
Siliconix J310Abstract: GASFET MODEL statement is the GASFET; otherwise it is the JFET. Introduction SPICE is the de facto , negative VTO. When ALPHA and CDS are offered, the PSPice model used is the GASFET, not the JFET model , AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly , parameters that rightfully need to be extracted. Be aware that SPICE parameters for any semiconductor , criticallyimportant parameters, RS and RD. The following table of SPICE parameters has been extracted from 
Temic Semiconductors Original 

Siliconix J310 GASFET J111 spice model 2N4339 Spice Siliconix JFET U310 spice model SST310 SST176 2N5116 
J111 spice modelAbstract: Siliconix AN104 MODEL statement is the GASFET; otherwise it is the JFET. Introduction SPICE is the de facto , negative VTO. When ALPHA and CDS are offered, the PSPice model used is the GASFET, not the JFET model , AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly , parameters that rightfully need to be extracted. Be aware that SPICE parameters for any semiconductor , parameters, RS and RD. The following table of SPICE parameters has been extracted from measurementsnone 
Siliconix Original 

U310 2n4416 jfet datasheet jfet J111 transistor application note jfet J111 transistor PSpice 2N4416 Siliconix 
J111 spice modelAbstract: U310 spice model MODEL statement is the GASFET; otherwise it is the JFET. Introduction SPICE is the de facto , negative VTO. When ALPHA and CDS are offered, the PSPice model used is the GASFET, not the JFET model , AN104 SPICE Parameters for Select JFETs Ed Oxner The following table of parameters will input , parameters that rightfully need to be extracted. Be aware that SPICE parameters for any semiconductor , criticallyimportant parameters, RS and RD. The following table of SPICE parameters has been extracted from 
Temic Semiconductors Original 

HC49/pspice model 2n4391 spice J176 oxner J111 J211 
5962R8961002VHAAbstract: rh1499mw ) SEE Neutron n/cm2 SPICE model WCCA RH101ADICE RH101ADICE 200K 200K 200K 200K 100K 100K , Neutron n/cm2 Planned Planned Planned SPICE model WCCA RH DICE InsideTM Description Dual Micropower , (3) Note(3) Note(3) Note(3) Note(4) Note(4) Neutron n/cm2 Planned Planned Planned Planned SPICE model , EAR99 EAR99 ITAR ITAR ITAR ITAR TID rad(Si) ELDRS rad(Si) SEE Neutron n/cm2 SPICE model WCCA RH DICE , ) Note(8) Note(8) Note(8) Neutron n/cm2 Planned Planned Planned Planned Planned Planned SPICE model WCCA 
Linear Technology Original 

RH108AW 5962R8961002VHA rh1499mw RH1009MH TID RADIATION TEST OF OP. AMP 5962R8961002VXC 1X10E12 LF198H LM101AH LM101AJ8 LM101AW RH101AH RH101AJ8 
op amp 741 model PSpice codeAbstract: op amp 741 model PSpice program SPICE (or one of its many derivatives), and modern day op amps, including bipolar, JFET, and , need is just a good op amp model, and SPICE. More likely, there will always be some uncertainties, so , transistor types are accommodated via the SPICE transistor model parameters of J1/J2, M1/M2, etc. The , Application Note 48 November 1991 Using the LTC Op Amp Macromodels Getting the Most from SPICE , the Linear Technology SPICE macromodel library. It assumes little if any prior knowledge of this 
Linear Technology Original 

LTC1050 op amp 741 model PSpice code op amp 741 model PSpice DCM4 diode AN4820 MAR 732 op amp 741 model Spice 4902E10 7124E04 0000E 0000E11 0664E 9900E 
99c14Abstract: AN117 OP42 Advanced SPICE Macromodel possible only those parameters necessary to the JFET model are specified, that is the threshold voltage VTO , the proper input bias current. All other JFET parameters are left at the model default values, most of , modelled with external circuit elements. For example, no gate capacitance is specified for the JFET model , 020629106 â'¢ 617/3294700 OP42 Advanced SPICE MacroModel by Joe Buxton INTRODUCTION This application note describes the SPICE macromodel for the OP42 highspeed, fastsettling precision operational 
 OCR Scan 

AN117 99c14 AN117 OP42 Advanced SPICE Macromodel 
Resistance r28Abstract: AN117 possible only those parameters necessary to the JFET model are specified, that is the threshold voltage VTO , the proper input bias current. All other JFET parameters are left at the model default values, most of , modelled with external circuit elements. For example, no gate capacitance is specified for the JFET model , , MASSACHUSETTS 020629106 â'¢ 617/3294700 OP42 Advanced SPICE MacroModel by Joe Buxton INTRODUCTION This application note describes the SPICE macromodel for the OP42 highspeed, fastsettling precision operational 
 OCR Scan 

Resistance r28 AR2425 OP42s matched pair JFET 2E15 3E15 AT53MHZ 261E6 171E6 181E6 58E11 
SPICE PARAMETER, sanyo, bipolar transistorAbstract: CPH5901 CPH5901 Base Emitter/Drain Source NPNTR JFET Gate Collector Schematic of CPH5901 SPICE PARAMETER N JFET Parameter Value Unit Parameter Value Unit VTO BETA LAMBDA RD RS RG IS N 0.56 34.0m 17.0m 0.64 0.64 0.02 0.80f 1.07 V CGD CGS 8.00p 8.00p F PB MJ FC 0.42 0.28 0.5 V A/V V 2 1 ohm ohm ohm A IDSS= 11mA , SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : GummelPoon Parameter Value Unit 
SANYO Electric Original 

SPICE PARAMETER, sanyo, bipolar transistor bipolar junction transistor transistor ne 107 
Showing first 20 results. Show More 