500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPS6508700RSKR Texas Instruments PMIC for AMD™ Family 17h Models 10h-1Fh Processors 64-VQFN -40 to 85 visit Texas Instruments
TPS6508700RSKT Texas Instruments PMIC for AMD™ Family 17h Models 10h-1Fh Processors 64-VQFN -40 to 85 visit Texas Instruments Buy

j177 model

Catalog Datasheet MFG & Type PDF Document Tags

J174

Abstract: j175 Support & tools Spice model of J176 Spice model of J177 Spice model of J174 Spice model of J175 About , Philips Semiconductors; J174; J175; J176; J177; P-channel silicon field-effect transistors , Product Information J174; J175; J176; J177; P-channel silicon field-effect transistors General , of J174; J175; J176; J177; P-channel silicon field-effect transistors Stay informed Download , Download PDF File J174; J175; J176; J177 top Parametrics IDSS MIN RDS(on) toff IDSS IDSS toff
Philips Semiconductors
Original

IN5235B

Abstract: solid state relay spice model Figure 1. Figure 2 illustrates a design/model for what is probably the simplest possible MOSFET switch . V CC R4 1 M R3 0.5 Figure 2. Simplest MOSFET Switch Model Iin Drive LED , model for the VO1263 is very simple and the fact that very detailed models for power MOSFETs are , made with minimal effort. There are two approaches to modeling PDA. One is to model the VO1263 as a , can lead to unrealistic scenarios. Second and a better approach is to model the PDA of VO1263 as a
Vishay Siliconix
Original
IN5235B SUD50N04-05L solid state relay spice model sSR spice model spice model solid state relay phototriac Spice spice model TRIAC OUTPUT OPTOCOUPLER SUD50N04 1N5235B 2N3904

Application Note 60

Abstract: spice model TRIAC OUTPUT OPTOCOUPLER similar to what is ilustrated in figure 1. OPTO-MOSFET Figure 2 illustrates a design/model for what is , MOSFET Switch Model Iin Drive LED Photo stack Iout A DC MOSFET based relay can be designed , equations the best way to predict turn-on and turn-off performance would be using SPICE. The model for the , approaches to modeling a PDA. One is to model the VO1263 as a current source, where the current is specified , approach is to model the PDA of VO1263 as a voltage source driving a high output impedance. The output
Vishay Siliconix
Original
Application Note 60 phototransistor spice model IN5235 arcing spice model mosfet dc switch MOSFET based SSR

HOW TO DRIVE SSR USING MOSFET DRIVER

Abstract: VO1263 Figure 1. Figure 2 illustrates a design/model for what is probably the simplest possible MOSFET switch . V CC R4 1 M R3 0.5 Figure 2. Simplest MOSFET Switch Model Iin Drive LED , model for the VO1263 is very simple and the fact that very detailed models for power MOSFETs are , made with minimal effort. There are two approaches to modeling PDA. One is to model the VO1263 as a , can lead to unrealistic scenarios. Second and a better approach is to model the PDA of VO1263 as a
Vishay Siliconix
Original
HOW TO DRIVE SSR USING MOSFET DRIVER triac spice model j177 model J177 equivalent photovoltaic mosfet driver 1N5235B spice model

WELWYN c21

Abstract: , 2655 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22â'A114) 1C Machine Model (per EIA/JESD22â'A115) A Charge Device Model (per JESD22â'C101 , /PM (5) 2620 27.1 â' j17.7 22.9 + j19.6 8.62 â' j15.3 12.8 46.1 40 58.3 , Output Power P3dB f (MHz) Zsource (W) Zin (W) 2620 27.1 â' j17.7 26.5 + j18 , (%) AM/PM (5) 2620 27.1 â' j17.7 21.4 + j21.6 13.6 â' j7.07 14.1 44.4 28
Freescale Semiconductor
Original
WELWYN c21 AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 780GS 6/2013S
Abstract: Methodology Class Human Body Model (per JESD22â'A114) 1C Machine Model (per EIA/JESD22â'A115) A Charge Device Model (per JESD22â'C101) III Table 4. Electrical Characteristics (TA = 25Â , ) AM/PM (5) 2620 27.1 â' j17.7 22.9 + j19.6 8.62 â' j15.3 12.8 46.1 40 58.3 , Output Power P3dB f (MHz) Zsource (W) Zin (W) 2620 27.1 â' j17.7 26.5 + j18 , (%) AM/PM (5) 2620 27.1 â' j17.7 21.4 + j21.6 13.6 â' j7.07 14.1 44.4 28 Freescale Semiconductor
Original
5/2013S

WELWYN c21

Abstract: Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C Machine Model (per EIA/JESD22-A115) A Charge Device Model (per JESD22-C101) III Table 4. Electrical Characteristics (TA , '°) 2620 27.1 - j17.7 22.9 + j19.6 8.62 - j15.3 12.8 46.1 40 58.3 -32 2655 , P3dB f (MHz) Zsource () Zin () 2620 27.1 - j17.7 26.5 + j18.9 2655 36.7 , ) D (%) AM/PM (ï'°) 2620 27.1 - j17.7 21.4 + j21.6 13.6 - j7.07 14.1 44.4
Freescale Semiconductor
Original
NI-780S-4L4S NI-780GS-4L4L NI-780S-4L4L 7/2013S

3010 MOS

Abstract: j177 equivalent transistor reliability. SL-3010 1000 MHz 30W Broadband 26V RF Power N-Channel Enhancement Mode LDMOS Model SL-30101 Intermodulation Distortion vs. Output Power -20 IMD, Intermodulation Distortion (dBc) Model SL , 1.58 - j1.84 1.57 - j1.83 1.56 - j1.77 1.56 - j1.70 1.56 - j1.63 1.54 - j1.58 1.53 - j1.56 1.50 - j1
Stanford Microdevices
Original
3010 MOS j177 equivalent transistor SL-30102

0203S

Abstract: J162 overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to , .2 13.6 + j16.2 GATE (2) ZS ZL (complex optimum load impedance) 63.5 + j17.7 63.4 + j17.7 63.1 , number denotes model program. X before the part number denotes engineering prototype. The last two
Agere Systems
Original
AGRA10XM 0203S J162 MOSFET J147 JESD22-C101A j507 AGRA10 IS-95 DS04-139RFPP DS03-127RFPP

MOSFET J162

Abstract: j162 overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to , impedance) 63.5 + j17.7 63.4 + j17.7 63.1 + j17.1 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH , ( millimeters ) Label Notes: M before the part number denotes model program. X before the part number denotes
Agere Systems
Original
MOSFET J162 DS04-202RFPP

MOSFET J162

Abstract: MOSFET J147 . Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM , .7 12.8 + j15.2 13.6 + j16.2 ZL (complex optimum load impedance) 63.5 + j17.7 63.4 + j17.7 63.1 + j17 , Label Notes: s M before the part number denotes model program. X before the part number denotes
Agere Systems
Original
J473

n-channel dual 3010

Abstract: CISS 3010 . Model SL-30102 Model SL-30101 Available in pill or flange ceramic packages Intermodulation , j2.03 810 1.57 - j1.83 3.44 + j2.03 820 1.56 - j1.77 3.50 + j2.09 830 1.56 -
Sirenza Microdevices
Original
n-channel dual 3010 CISS 3010 SL3010
Abstract: '"30 dBc @ 5 MHz â'¢ Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) â , .1 3.49 â'" j6.98 16.5 48.38 68.9 9 â'" j17.7 3.56 â'" j6.97 16.7 48.29 67.5 Infineon Technologies
Original
PXAC261202FC H-37248-4
Abstract: 60 Gain [dB] 20 ZS = 2.32 - j0.10 â"¦ 19 50 ZL = 2.66 + j1.77 â"¦ 18 40 17 , : Value: Test: Standard: Class 1B Passes ≥ 500 V to < 1,000 V max. Human Body Model (HBM) JEDEC TriQuint Semiconductor
Original
T1G4012036-FL N25HV EAR99 T1G4012036-FSEVB1
Abstract: j1.77 â"¦ 18 40 17 30 Gain DrEff. PAE 16 15 14 36 38 40 42 44 46 , ESD Rating: Value: Test: Standard: TBD TBD Human Body Model (HBM) JEDEC Standard JESD22-A114 TriQuint Semiconductor
Original

70413080

Abstract: 70473180 -174 2N5461* SPS-576* 70400174 30V P-CH. 70400177 30V P-CH. J-177 J-231 J-202, SKA , -­ o ­ ­ o ­ ­ ­ o ­ J-177, J-174, J-270, J-175 ­ D S G -­ , o ­ ­ ­ o ­ ­ 2222 Page 23 CAPACITORS Nearly all recent model Peavey circuits
-
Original
70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 2N3391 SPS-953 MPS-8097 2N6520 MPS-A18 2N6539
Abstract: j1.77 â"¦ 18 40 17 30 Gain DrEff. PAE 16 15 14 36 38 40 42 44 46 , ESD Rating: Value: Test: Standard: TBD TBD Human Body Model (HBM) JEDEC Standard JESD22-A114 TriQuint Semiconductor
Original
T1G4012036-FS
Abstract: 60 Gain [dB] 20 ZS = 2.32 - j0.10 â"¦ 19 50 ZL = 2.66 + j1.77 â"¦ 18 40 17 , : Value: Test: Standard: Class 1B Passes ≥ 500 V to < 1,000 V max. Human Body Model (HBM) JEDEC TriQuint Semiconductor
Original
Abstract: VSWR @28 V, 28 W (CW) output power â'¢ Integrated ESD protection : Human Body Model, Class 1C (per , 16.4 60.5 4.9 â'" j2.3 24.1 40.89 12.3 67.3 2170 17.1 â'" j17.7 7.0 â'" j5 Infineon Technologies
Original
PTFC210202FC
Abstract: Body Model, Class 1C (per JESD22-A114) â'¢ Low thermal resistance â'¢ Pb-free and RoHS , â'" j2.3 24.1 40.89 12.3 67.3 2170 17.1 â'" j17.7 7.0 â'" j5.7 22.1 42.08 Infineon Technologies
Original
Showing first 20 results.