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j177 model

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Abstract: Support & tools Spice model of J176 Spice model of J177 Spice model of J174 Spice model of J175 About , Philips Semiconductors; J174; J175; J176; J177; P-channel silicon field-effect transistors , Product Information J174; J175; J176; J177; P-channel silicon field-effect transistors General , of J174; J175; J176; J177; P-channel silicon field-effect transistors Stay informed Download , Download PDF File J174; J175; J176; J177 top Parametrics IDSS MIN RDS(on) toff IDSS IDSS toff Philips Semiconductors
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J174 j175 j177 Philips TO-92 MARKING CODE J176 43 marking SC-43
Abstract: Figure 1. Figure 2 illustrates a design/model for what is probably the simplest possible MOSFET switch . V CC R4 1 M R3 0.5 Figure 2. Simplest MOSFET Switch Model Iin Drive LED , model for the VO1263 is very simple and the fact that very detailed models for power MOSFETs are , made with minimal effort. There are two approaches to modeling PDA. One is to model the VO1263 as a , can lead to unrealistic scenarios. Second and a better approach is to model the PDA of VO1263 as a Vishay Siliconix
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IN5235B SUD50N04-05L solid state relay spice model sSR spice model spice model solid state relay phototriac Spice spice model TRIAC OUTPUT OPTOCOUPLER SUD50N04 1N5235B 2N3904
Abstract: similar to what is ilustrated in figure 1. OPTO-MOSFET Figure 2 illustrates a design/model for what is , MOSFET Switch Model Iin Drive LED Photo stack Iout A DC MOSFET based relay can be designed , equations the best way to predict turn-on and turn-off performance would be using SPICE. The model for the , approaches to modeling a PDA. One is to model the VO1263 as a current source, where the current is specified , approach is to model the PDA of VO1263 as a voltage source driving a high output impedance. The output Vishay Siliconix
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phototransistor spice model IN5235 arcing spice model mosfet dc switch optocoupler triac spice MOSFET based SSR
Abstract: Figure 1. Figure 2 illustrates a design/model for what is probably the simplest possible MOSFET switch . V CC R4 1 M R3 0.5 Figure 2. Simplest MOSFET Switch Model Iin Drive LED , model for the VO1263 is very simple and the fact that very detailed models for power MOSFETs are , made with minimal effort. There are two approaches to modeling PDA. One is to model the VO1263 as a , can lead to unrealistic scenarios. Second and a better approach is to model the PDA of VO1263 as a Vishay Siliconix
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HOW TO DRIVE SSR USING MOSFET DRIVER triac spice model J177 equivalent photovoltaic mosfet driver TRIACS EQUIVALENT LIST SSR schematics
Abstract: , 2655 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22â'A114) 1C Machine Model (per EIA/JESD22â'A115) A Charge Device Model (per JESD22â'C101 , /PM (5) 2620 27.1 â' j17.7 22.9 + j19.6 8.62 â' j15.3 12.8 46.1 40 58.3 , Output Power P3dB f (MHz) Zsource (W) Zin (W) 2620 27.1 â' j17.7 26.5 + j18 , (%) AM/PM (5) 2620 27.1 â' j17.7 21.4 + j21.6 13.6 â' j7.07 14.1 44.4 28 Freescale Semiconductor
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WELWYN c21 AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 780GS 6/2013S
Abstract: Methodology Class Human Body Model (per JESD22â'A114) 1C Machine Model (per EIA/JESD22â'A115) A Charge Device Model (per JESD22â'C101) III Table 4. Electrical Characteristics (TA = 25Â , ) AM/PM (5) 2620 27.1 â' j17.7 22.9 + j19.6 8.62 â' j15.3 12.8 46.1 40 58.3 , Output Power P3dB f (MHz) Zsource (W) Zin (W) 2620 27.1 â' j17.7 26.5 + j18 , (%) AM/PM (5) 2620 27.1 â' j17.7 21.4 + j21.6 13.6 â' j7.07 14.1 44.4 28 Freescale Semiconductor
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5/2013S
Abstract: Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C Machine Model (per EIA/JESD22-A115) A Charge Device Model (per JESD22-C101) III Table 4. Electrical Characteristics (TA , '°) 2620 27.1 - j17.7 22.9 + j19.6 8.62 - j15.3 12.8 46.1 40 58.3 -32 2655 , P3dB f (MHz) Zsource () Zin () 2620 27.1 - j17.7 26.5 + j18.9 2655 36.7 , ) D (%) AM/PM (ï'°) 2620 27.1 - j17.7 21.4 + j21.6 13.6 - j7.07 14.1 44.4 Freescale Semiconductor
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NI-780S-4L4S NI-780GS-4L4L NI-780S-4L4L 7/2013S
Abstract: reliability. SL-3010 1000 MHz 30W Broadband 26V RF Power N-Channel Enhancement Mode LDMOS Model SL-30101 Intermodulation Distortion vs. Output Power -20 IMD, Intermodulation Distortion (dBc) Model SL , 1.58 - j1.84 1.57 - j1.83 1.56 - j1.77 1.56 - j1.70 1.56 - j1.63 1.54 - j1.58 1.53 - j1.56 1.50 - j1 Stanford Microdevices
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3010 MOS j177 equivalent transistor SL-30102
Abstract: overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to , .2 13.6 + j16.2 GATE (2) ZS ZL (complex optimum load impedance) 63.5 + j17.7 63.4 + j17.7 63.1 , number denotes model program. X before the part number denotes engineering prototype. The last two Agere Systems
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AGRA10XM 0203S J162 j507 JESD22-C101A MOSFET J147 AGRA10 IS-95 DS04-139RFPP DS03-127RFPP
Abstract: overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to , impedance) 63.5 + j17.7 63.4 + j17.7 63.1 + j17.1 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH , ( millimeters ) Label Notes: M before the part number denotes model program. X before the part number denotes Agere Systems
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MOSFET J162 DS04-202RFPP
Abstract: . Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM , .7 12.8 + j15.2 13.6 + j16.2 ZL (complex optimum load impedance) 63.5 + j17.7 63.4 + j17.7 63.1 + j17 , Label Notes: s M before the part number denotes model program. X before the part number denotes Agere Systems
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J473
Abstract: . Model SL-30102 Model SL-30101 Available in pill or flange ceramic packages Intermodulation , j2.03 810 1.57 - j1.83 3.44 + j2.03 820 1.56 - j1.77 3.50 + j2.09 830 1.56 - Sirenza Microdevices
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n-channel dual 3010 CISS 3010 SL3010
Abstract: '"30 dBc @ 5 MHz â'¢ Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) â , .1 3.49 â'" j6.98 16.5 48.38 68.9 9 â'" j17.7 3.56 â'" j6.97 16.7 48.29 67.5 Infineon Technologies
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PXAC261202FC H-37248-4
Abstract: 60 Gain [dB] 20 ZS = 2.32 - j0.10 â"¦ 19 50 ZL = 2.66 + j1.77 â"¦ 18 40 17 , : Value: Test: Standard: Class 1B Passes ≥ 500 V to < 1,000 V max. Human Body Model (HBM) JEDEC TriQuint Semiconductor
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T1G4012036-FL N25HV EAR99 T1G4012036-FSEVB1
Abstract: j1.77 â"¦ 18 40 17 30 Gain DrEff. PAE 16 15 14 36 38 40 42 44 46 , ESD Rating: Value: Test: Standard: TBD TBD Human Body Model (HBM) JEDEC Standard JESD22-A114 TriQuint Semiconductor
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Abstract: -174 2N5461* SPS-576* 70400174 30V P-CH. 70400177 30V P-CH. J-177 J-231 J-202, SKA , -­ o ­ ­ o ­ ­ ­ o ­ J-177, J-174, J-270, J-175 ­ D S G -­ , o ­ ­ ­ o ­ ­ 2222 Page 23 CAPACITORS Nearly all recent model Peavey circuits -
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70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 2N3391 SPS-953 MPS-8097 2N6520 MPS-A18 2N6539
Abstract: j1.77 â"¦ 18 40 17 30 Gain DrEff. PAE 16 15 14 36 38 40 42 44 46 , ESD Rating: Value: Test: Standard: TBD TBD Human Body Model (HBM) JEDEC Standard JESD22-A114 TriQuint Semiconductor
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T1G4012036-FS
Abstract: 60 Gain [dB] 20 ZS = 2.32 - j0.10 â"¦ 19 50 ZL = 2.66 + j1.77 â"¦ 18 40 17 , : Value: Test: Standard: Class 1B Passes ≥ 500 V to < 1,000 V max. Human Body Model (HBM) JEDEC TriQuint Semiconductor
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Abstract: VSWR @28 V, 28 W (CW) output power â'¢ Integrated ESD protection : Human Body Model, Class 1C (per , 16.4 60.5 4.9 â'" j2.3 24.1 40.89 12.3 67.3 2170 17.1 â'" j17.7 7.0 â'" j5 Infineon Technologies
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PTFC210202FC
Abstract: Body Model, Class 1C (per JESD22-A114) â'¢ Low thermal resistance â'¢ Pb-free and RoHS , â'" j2.3 24.1 40.89 12.3 67.3 2170 17.1 â'" j17.7 7.0 â'" j5.7 22.1 42.08 Infineon Technologies
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