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IXTQ90N15T IXYS Corporation Power Field-Effect Transistor, 90A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN visit Digikey Buy
IXTQ74N20P IXYS Corporation Power Field-Effect Transistor, 74A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN visit Digikey Buy
IXTQ40N50Q IXYS Corporation Power Field-Effect Transistor, 40A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN visit Digikey Buy
IXTQ470P2 IXYS Corporation Power Field-Effect Transistor, 42A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN visit Digikey Buy
IXTQ30N50P IXYS Corporation Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN visit Digikey Buy
IXTQ52N30P IXYS Corporation Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN visit Digikey Buy

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ixtq Datasheet

Part Manufacturer Description PDF Type
IXTQ100N25P IXYS Discrete MOSFETs: Standard N-channel Types Original
IXTQ102N15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-3P Original
IXTQ10P50P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-3P Original
IXTQ110N055P IXYS Discrete MOSFETs: Standard N-channel Types Original
IXTQ110N10P IXYS Discrete MOSFETs: Standard N-channel Types Original
IXTQ120N15P IXYS PolarHT Power MOSFET Original
IXTQ120N20P IXYS Discrete MOSFETs: Standard N-channel Types Original
IXTQ130N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-3P Original
IXTQ130N15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 130A TO-3P Original
IXTQ140N10P IXYS Discrete MOSFETs: Standard N-channel Types Original
IXTQ14N60P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 14A TO-3P Original
IXTQ14N60P IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original
IXTQ150N06P IXYS PolarHT Power MOSFET N-Channel Enhancement Mode Original
IXTQ150N15P IXYS PolarHT Power MOSFET Original
IXTQ152N085T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 85V 152A TO-3P Original
IXTQ160N075T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-3P Original
IXTQ160N085T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 85V 160A TO-3P Original
IXTQ160N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 160A TO-3P Original
IXTQ16N50P IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original
IXTQ170N10P IXYS Discrete MOSFETs: Standard N-channel Types Original
Showing first 20 results.

ixtq

Catalog Datasheet MFG & Type PDF Document Tags

DIODE 1334

Abstract: 1334 diode x 6 IXTP 110N055P IXTP 75N10P IXTQ 110N10P IXTQ 140N10P IXTQ 170N10P IXTK 200N10P IXTP 62N15P IXTQ 96N15P IXTQ 120N15P IXTQ 150N15P IXTK 180N15P IXTP 50N20P IXTQ 74N20P IXTQ 96N20P IXTQ 120N20P IXTK 140N20P IXTP 42N25P IXTQ 64N25P IXTQ 82N25P IXTQ 100N25P IXTK 120N25P IXTP 36N30P IXTQ 52N30P IXTQ 69N30P IXTQ 88N30P IXTK 102N30P Source bond wire recommended Equivalent device data sheet PolarHT TM MOSFETs
IXYS
Original
200N10P-88 DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 IXTP IXTP IXTP IXTP 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S

150N15P

Abstract: 150n15 PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS(on) 13 m , © 2006 IXYS All rights reserved V V ±100 TJ = 175° C 5.0 D (TAB) S TO-3P (IXTQ) G , 13 D nA 25 500 G m l DS99299E(03/06) IXTK 150N15P IXTQ 150N15P Symbol , 25 A -di/dt = 100 A/µs VR = 100 V, VGS = 0 V QRM 150 ns 2.3 TO-3P (IXTQ) Outline , ,710,405B2 6,759,692 6,710,463 6,771,478 B2 IXTK 150N15P IXTQ 150N15P Fig. 1. Output
IXYS
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150n15 2709V

50N28T

Abstract: 50N28 Advance Technical Information IXTQ 50N28T IXTA 50N28T IXTP 50N28T Trench Gate Power MOSFET , -3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to , reserved V Advantages m DS99378(04/05) IXTA 50N28T IXTP 50N28T IXTQ 50N28T Symbol Test , 1 MHz S 4070 Ciss TO-3P (IXTQ) Outline pF Crss td(on) 37 ns tr VGS = , ,692 2 - Drain IXTA 50N28T IXTP 50N28T IXTQ 50N28T Fig. 1. Output Characteristics Fig. 2
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50N28 50N2 ixTA50N28T
Abstract: Display Application IXTQ 64N28T VDSS ID25 RDS(on) = 280 V = 64 A = 49 m Symbol VDSS VDGR , -55 . +150 150 -55 . +150 V V V V A A V/ns W °C °C °C °C TO-3P (IXTQ) G D S (TAB , rights reserved DS99301(01/05) IXTQ 64N28T Symbol Test Conditions Characteristic Values (TJ = 25 , ID25 43 37 S pF pF pF ns ns ns ns 140 nC nC nC 0.25 K/W 0.21 K/W TO-3P (IXTQ) Outline gfs Ciss Coss , ,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXTQ IXYS
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36n50P

Abstract: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 , dv/dt G A EAR TO-3P (IXTQ) PD TC = 25°C 500 TL 300 250 1.6 mm (0.062 , µA µA 170 G = Gate S = Source m DS99228(11/04) IXTQ 36N50P IXTT 36N50P Symbol , 60 pF td(on) 29 TO-3P (IXTQ) Outline ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 , 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTQ 36N50P IXTT 36N50P Fig. 2
IXYS
Original

150N06P

Abstract: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS(on) = 60 V = 150 A ≤ 10 mâ"¦ â , -3P (IXTQ) µA µA 10 mâ"¦ DS99254E(12/05) IXTQ 150N06P Symbol Test Conditions , 3000 Ciss 50 TO-3P (IXTQ) Outline pF Crss 27 ns tr td(on) VGS = 10 V, VDS = , ,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 150N06P Fig. 1. Output , -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTQ
IXYS
Original

74N20P

Abstract: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A â"¦ ≤ 34 , width limited by TJM 200 A IAR TC = 25° C 60 TO-3P (IXTQ) Maximum Ratings A , High power density µA µA 34 l mâ"¦ l DS99119E(12/05) IXTQ 74N20P IXTT 74N20P , 190 Ciss 44 TO-3P (IXTQ) Outline pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 23 , 6,759,692 6,771,478 B2 IXTQ 74N20P IXTT 74N20P Fig. 2. Extended Output Characteristics @
IXYS
Original
Abstract: PolarHTTM Power MOSFET VDSS ID25 IXTQ 64N25P IXTT 64N25P = = ≤ RDS(on) 250 V , 25° C, pulse width limited by TJM 160 A IAR TC = 25° C 60 TO-3P (IXTQ) Maximum , © 2006 IXYS All rights reserved l mâ"¦ DS99120E(12/05) IXTQ 64N25P IXTT 64N25P Symbol , Ciss 30 TO-3P (IXTQ) Outline pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 21 ns tr , ,478 B2 IXTQ 64N25P IXTT 64N25P Fig. 1. Output Characte ris tics @ 25ºC Fig. 2. Exte nde d IXYS
Original

IXTQ26N50P

Abstract: 26n50ps Advanced Technical Information IXTQ 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET , Conditions (TJ = 25°C, unless otherwise specified) TO-3P (IXTQ) D (TAB) S G = Gate S = Source , savings High power density DS99206(11/04) IXTQ 26N50P IXTV 26N50P IXTV 26N50PS Symbol Test , td(on) 20 TO-3P (IXTQ) Outline ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr , ,463 6,727,585 6,759,692 2 - Drain TAB - Drain IXTQ 26N50P IXTV 26N50P IXTV 26N50PS Fig
IXYS
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PLUS220SMD b5237 PLUS220

120N20P

Abstract: IXTQ120N20P PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS(on) 22 m , © 2006 IXYS All rights reserved V V ±100 TJ = 175° C 5.0 (TAB) S TO-3P (IXTQ) G , 22 D nA 25 500 G m l DS99207E(10/05) IXTK 120N20P IXTQ 120N20P TO , .170 .070 .090 .238 .248 V trr QRM Dim. 180 3.0 TO-3P (IXTQ) Outline ns µC , 6,727,585 6,759,692 6,771,478 B2 IXTK 120N20P IXTQ 120N20P Fig. 1. Output Characteristics @
IXYS
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120N20
Abstract: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS(on) ≤ 240 m â"¦ IXTH 30N60P IXTQ , ) Characteristic Values Min. Typ. Max. RDS(on) S TO-3P (IXTQ) °C °C °C 300 260 TJ TJM , packages l Low package inductance - easy to drive and to protect DS99251E(12/05) IXTH 30N60P IXTQ , ,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 27 30 IXTH 30N60P IXTQ 30N60P IXTT , IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Fig. 9. Source Curre nt vs . Source IXYS
Original

IXTP86N20T

Abstract: 86n20t IXTA 86N20T IXTP 86N20T IXTQ 86N20T Trench Gate Power MOSFET VDSS ID25 = 200 V = 86 , -220 (IXTP) G (TAB) D S TO-3P (IXTQ) G D (TAB) S G = Gate S = Source D = Drain , 86N20T IXTQ 86N20T Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 46 , IXTA 86N20T Fig. 1. Output Characteristics @ 25ºC IXTP 86N20T IXTQ 86N20T Fig. 2. Extended , IXTA 86N20T IXTP 86N20T IXTQ 86N20T Fig. 8. Transconductance Fig. 7. Input Admittance 160
IXYS
Original
IXTP86N20T

52n30p

Abstract: IXTT52N30P Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 , µA 66 TO-3P (IXTQ) G C (TAB) E TO-268 (IXTT) G G = Gate S = Source S , mount Space savings High power density DS99115A(10/04) IXTQ 52N30P IXTT 52N30P Symbol Test , ) 24 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 20 TO-3P (IXTQ) Outline tr VGS , ,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTQ 52N30P IXTT
IXYS
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1M300 52N30
Abstract: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 120N20P IXTK 120N20P VDSS = 200 V ID25 = 120 A RDS(on) 22 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test , . DS99207(09/04) IXTK 120N20P IXTQ 120N20P TO-3P Outline Symbol Test Conditions Characteristic , .330 .342 .150 .170 .070 .090 .238 .248 IXTK 120N20P IXTQ 120N20P Fig. 1. Output , TC - Degrees Centigrade 150 175 IXTK 120N20P IXTQ 120N20P Fig. 8. Transconductance Fig IXYS
Original
Abstract: PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ69N30P IXTT69N30P , Ratings 300 300 ± 20 V V V A A A mJ J V/ns W °C °C °C °C TO-3P (IXTQ) TC = 25°C TC = 25°C, pulse , process. US patent is pending. DS99078A(04/04) © 204 IXYS All rights reserved IXTQ 69N30P IXTT , nC nC nC 0.25 K/W (TO-247, TO-3P) 0.21 K/W TO-3P (IXTQ) Outline gfs Ciss Coss C rss td(on) tr td , ,404,065B1 6,162,665 6,534,343 IXTQ 69N30P IXTT 69N30P Fig. 1. Output Characte ris tics @ 25 De g IXYS
Original

100N25P

Abstract: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A , D D (TAB) S TO-3P (IXTQ) G D (TAB) S TJ ≤150° C, RG = 4 â"¦ PD TC = 25 , IXTQ 100N25P IXTT 100N25P TO-3P (IXTQ) Outline Symbol Test Conditions Characteristic Values , 6,759,692 6,771,478 B2 IXTK 100N25P IXTQ 100N25P IXTT 100N25P Fig. 2. Exte nde d Output Char , 50 75 100 TC - Degrees Centigrade 125 150 IXTK 100N25P IXTQ 100N25P IXTT 100N25P
IXYS
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IXTV18N60P

Abstract: PLUS220SMD IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A 400 m RDS(on) N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions VDSS , DS99324A(04/05) IXTQ 18N60P IXTV 18N60PS IXTV18N60P Symbol Test Conditions Characteristic , -3P (IXTQ) Outline ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 , IXTQ 18N60P IXTV 18N60PS IXTV18N60P Fig. 1. Output Characteristics Fig. 2. Output
IXYS
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2005IXYS

22N60P

Abstract: siemens 30 IXTQ 22N60P IXTV 22N60P IXTV 22N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 22 A 330 m RDS(on) N-Channel Enhancement Mode Preliminary Data Sheet TO-3P (IXTQ) Symbol Test , Space savings High power density DS99250B(04/05) IXTQ 22N60P Symbol Test Conditions , ID25, pulse test 15 21 pF 305 pF C rss 38 pF td(on) 20 TO-3P (IXTQ , ,405B2 6,710,463 6,727,585 6,759,692 2 - Drain TAB - IXTQ 22N60P Fig. 1. Output
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siemens 30
Abstract: PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 69N30P IXTT 69N30P VDSS ID25 RDS(on , 300 300 ± 20 ± 30 V V V V A A A mJ J V/ns W °C °C °C °C TO-3P (IXTQ) G C E (TAB) TC = 25 , process. US patent is pending. DS99078A(04/04) © 204 IXYS All rights reserved IXTQ 69N30P IXTT , nC nC nC 0.25 K/W (TO-247, TO-3P) 0.21 K/W TO-3P (IXTQ) Outline gfs Ciss Coss C rss td(on) tr td , ,404,065B1 6,162,665 6,534,343 IXTQ 69N30P IXTT 69N30P Fig. 1. Output Characte ris tics @ 25 De g IXYS
Original

88N30

Abstract: IXTH88N30P IXTK 88N30P IXTQ 88N30P VDSS ID25 RDS(on) = 300 V = 88 A = 40 m TO-247 (IXTH) Symbol VDSS , G D (TAB) S TO-264(SP) (IXTK) TO-3P (IXTQ) 1.13/10 Nm/lb.in. 6.0 10 5.5 g g g Features , 88N30P IXTQ 88N30P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified , ns ns ns nC nC nC 0.21 K/W TO-247 and TO-3P TO-264 0.21 0.15 K/W K/W TO-3P (IXTQ) Outline gfs Ciss , ,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 IXTH88N30P IXTK 88N30P IXTQ 88N30P Fig. 1
IXYS
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DSA003702 DS99284A
Showing first 20 results.