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IRF9620SPBF Vishay Siliconix Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF9620STRLPBF Vishay Siliconix Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF9620PBF Vishay Siliconix Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRF9620L Vishay Siliconix MOSFET P-CH 200V 3.5A TO-262 visit Digikey Buy
IRF9620STRR Vishay Siliconix MOSFET P-CH 200V 3.5A D2PAK visit Digikey Buy

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irf9620 Datasheet

Part Manufacturer Description PDF Type
IRF9620 Fairchild Semiconductor 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET Original
IRF9620 Harris Semiconductor Power MOSFET Selection Guide Original
IRF9620 Intersil 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs Original
IRF9620 Intersil 3.5A, 200V, 1.500 ?, P-Channel Power MOSFET Original
IRF9620 Toshiba Power MOSFETs Cross Reference Guide Original
IRF9620 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 3.5A TO-220AB Original
IRF9620 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF9620 International Rectifier HEXFET Power MOSFET Scan
IRF9620 International Rectifier TO-220 Plastic Package HEXFETs Scan
IRF9620 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan
IRF9620 International Rectifier Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A) Scan
IRF9620 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -200V, -2.5A, Pkg Style TO-220AB Scan
IRF9620 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRF9620 N/A Semiconductor Master Cross Reference Guide Scan
IRF9620 N/A Shortform Data and Cross References (Misc Datasheets) Scan
IRF9620 N/A FET Data Book Scan
IRF9620 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF9620 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF9620 N/A Shortform Datasheet & Cross References Data Scan
IRF9620 Vishay Siliconix Shortform Siliconix Datasheet Scan
Showing first 20 results.

irf9620

Catalog Datasheet MFG & Type PDF Document Tags

IRF9620

Abstract: SiHF9620 ORDERING INFORMATION Package TO-220 IRF9620PbF SiHF9620-E3 IRF9620 SiHF9620 Lead (Pb)-free SnPb , IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , IRF9620, SiHF9620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX , : 91082 S-81272-Rev. A, 16-Jun-08 IRF9620, SiHF9620 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , : 91082 S-81272-Rev. A, 16-Jun-08 www.vishay.com 3 IRF9620, SiHF9620 Vishay Siliconix Fig. 6
Vishay Siliconix
Original
diode 18B HF9620 IRF9620P HF9620-E3

irf9620

Abstract: IRF9622 _Rugged Power MOSFETs Fi,e Number 2283 IRF9620, IRF9621 IRF9622, IRF9623 , IRF9620, IRF9621, IRF9622 and IRF9623 are advanced power MOSFETs designed, tested, and guaranteed to , CHARACTERISTIC IRF9620 IRF9621 IRF9622 IRF9623 UNITS Drain-Source Voltage 0 Vds -200 -150 -200 -150 V , Temperature 300 (0.063 in. [1.6 mm] from case for 10 s) °C 6-381 Rugged Power MOSFETs IRF9620 , IRF9620 IRF9622 -200 - - V Vos = 0 V IRF9621 IRF9623 -150 - - V Jo = -250 «A Gate Threshold Voltage
-
OCR Scan
st 9622 9620 ir 92CS-43262 92CS-39528
Abstract: temperature ) nC THERMAL RESISTANO Symbol : IRF9620-3 Characteristic Unit 3 12 K/W , SAMSUNG ELECTRONICS INC bME » â  IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 â'˜ à , 40 -3 .0 A MAXIMUM RATINGS IRF9620 Characteristic IRF9621 IRF9622 IRF9623 Symbol , ° C 236 ELECTRONICS SAMSUNG ELECTRONICS INC b4E D â  7^4142 IRF9620/9621/9622/9623 , specified) Min Typ Max Units Drain-Source Breakdown Voltage IRF9620 IRF9622 -200 - - -
OCR Scan
IRF9620/9621 F9621 IRF9620/9621Z9622/9623 IRF9620/9621/9622/9623 Q01E57

irf9620

Abstract: IRF9620 Data Sheet July 1999 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET Title F96 bt , directly from integrated circuits. File Number D Ordering Information PART NUMBER IRF9620 PACKAGE TO-220AB G BRAND IRF9620 S NOTE: When ordering, use the entire part number , O frk ©2001 Fairchild Semiconductor Corporation IRF9620 Rev. A IRF9620 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF9620 -200 -200 -3.5 -2 -14 ±20 40 0.32 290
Fairchild Semiconductor
Original
TA17502

irf9220

Abstract: IRFP9220 DE | T T b m M E 5414 0 | - 2 0 0 Volt, 1.5 Ohm SFET IRF/IRFP9220, IRF9620 - 2 0 0 V ÌRF , -3P TO-220 Part Number IRF9220/9221/9222/9223 IRFP9220/9221/9222/9223 IRF9620/9621 /9622/9623 MAXIMUM , P-CHANNEL IRF9620/9621Z9622/9623_ POWER MOSFETS SAMSUNG SEMICONDUCTOR I N C TÛ DE | ? `f t . 4 14 , Characteristic Symbol Type KF9220/2 BFP9220/'; IRF9620/2 IRF9221/3 RFP9221/3 IRF962U3 Min -2 0 0 -1 5 0 -2 .0 , /1 ÍRF9620/1 - - - 4 .0 -1 0 0 100 -2 5 0 -1 0 0 0 - Vds=V gs. Id -250^xA nA Vgs= -
-
OCR Scan
irf9220 IRFP9220 IRF 9220 IRFP9222 specification of mosfet irf 9223 1RF9620/9621/9622/9623 RF/IRFP9221 IRF/IRFP9222 IRF/IRFP9223 DODS41 00GS435
Abstract: h a r r IRF9620, IRF9621, IRF9622, IRF9623 i s s e m i c o n d u c t o r -3A , Components to PC Boardsâ' Symbol Ordering Information PART NUM BER PACKAGE BRAND IRF9620 TO-220AB IRF9620 IRF9621 TO-220AB IRF9621 IRF9622 TO-220AB IRF9622 IRF9623 TO , Handling Procedures. C opyright © Harris C orporation 1998 _ , File Number 2283.1 IRF9620, IRF9621, IRF9622, IRF9623 Absolute Maximum Ratings T c = 2 5 °c , Unless Otherwise Specified IRF9620 -
OCR Scan
TB334 RF9622

IRF9622

Abstract: IRF9620 IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V , NUMBER PACKAGE BRAND IRF9620 TO-220AB IRF9620 IRF9621 TO-220AB IRF9621 IRF9622 , . Copyright © Harris Corporation 1998 6-1 File Number 2283.1 IRF9620, IRF9621, IRF9622 , Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg IRF9620 -200 -200 -3.5 -2 -14 ±20 , Otherwise Specified PARAMETER MIN TYP MAX UNITS IRF9620, IRF9622 -200 - - V
Harris Semiconductor
Original

irf9620

Abstract: IRF9620/9621 P-CHANNEL POWER MOSFETS FEATURES â'¢ Lower Rdsion) â'¢ Improved inductive ruggedness â , PRODUCT SUMMARY Part Number Vds RDS(on) Id IRF9620 -200V 1.5 0 -3.5A IRF9621 -150V 1.5 fi -3.5A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRF9620 IRF9621 Unit Drain-Source Voltage (1 ) Vdss -200 -150 Vdc , ) L=35mH, Vdd=-50V, Rg=250 , Starting Tj=25°C ^^^^ELECTRONICS â  7Tb4142 DGEfilEb bfc.2 387 IRF9620 , Charact eri stic Min Typ Max Units Test Conditions BVdss Drain-Source Breakdown Voltage IRF9620 IRF9621
-
OCR Scan

IRF3620

Abstract: IR 9622 , VGS = 10V 3.5 3.0 A Dra'n-Source On-State Resistance1 IRF9620.9621 IRF9622, 9623 fDS(ON) VGS = 10 V , ) Continuous Current IRF9620. 9621 IRF9622,9623 ls 3.5 3.0 A Pulsed Current3 IRF9620, 9621 IRF9622. 9623 IsM 14 12 Forward Vortage' IRF9620. 9621 IRF9622, 9623 Vso lF = IS.VQS = OV 7.0 6.8 V Reverse Recovery , SILICONIX INC IflE D â  A25473S 001474^ S â  BW¡SP$& IRF9620/9621Z9622/9623 P-Channel , DraTn-Source Breakdown Vortage IRF9620,9622 IRF9621. 9623 V(BR)DSS Vos = 0V.ID = 250|iA 200 150 V Gate
-
OCR Scan
IRF3620 IR 9622 1RF9620 1RF9622 3919 9621 1RF9620/9621 IRF9620/962179622/9623 T-39-19

irf9620

Abstract: IRF9620 Data Sheet January 2002 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This , PART NUMBER IRF9620 PACKAGE TO-220AB G BRAND IRF9620 S NOTE: When ordering, use the , Semiconductor Corporation IRF9620 Rev. B IRF9620 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF9620 -200 -200 -3.5 -2 -14 ±20 40 0.32 290 -55 to 150 UNITS V V A A A V W , Fairchild Semiconductor Corporation Typical Socket Mount IRF9620 Rev. B IRF9620 Source to Drain
Fairchild Semiconductor
Original

IR9620

Abstract: IRF9620 August 1991 IRF9620, fRF9621 IRF9622, IRF9623 Avalanche Energy Rated P-Channel Power MOSFETs , Characteristics â'¢ High Input Impedance Description The IRF9620, IRF9621, IRF9B22 and IRF9623 are advanced power , P-CHANNEL ENHANCEMENT MODE Absolute Maximum Ratings (Tc = 25°C) Unless Otherwise Specified IRF9620 JRF9621 , 5-80 Specifications IRF9620, IRF9621, JRF9622 Electrical Characteristics Tq = +25°C, Unless Otherwise , Drain-Source Breakdown Voltage IRF9620, 1RF9622 BVDSS Vqs = 0V, lD = -250JJA -200 â'ž V IRF9621,IRF9623
-
OCR Scan
IR9620 RF9623 IRF high current p-channel RF9621 T0-220AB SS22-

st 9622

Abstract: IRF9 Junction-to-Case C ase -to -Sin k Junction-to-Am bient MAX TYP MAX IRF9620-3 3 12 1 0 80 Unit K/W K/W K/W M ounting , IRF9620/9621 /9622/9623 FEATURES · · · · · · · Lower Ros (ON) Improved inductive ru gge d n e ss , A M AXIMUM RATINGS IRF9620 C h aracteristic Drain-Source Voltage (1) Drain-Gate Voltage ( R g s , = - 5 0 V , R G= 2 5 i l , Starting Tj = 2 5 ° C 236 ELECTRONICS IRF9620/9621 /9622/9623 , by max. junction temperature 237 ELECTRONICS IRF9620/9621/9622/9623 P-CHANNEL POWER
-
OCR Scan
IRF9

RG501 diode

Abstract: IRF9620 '" â'" 62 359 IRF9620_ Electrical Characteristics @ Tj = 25 C (unless otherwise specified) IOR , International Säg Rectifier PD-9.351F IRF9620 HEXFET® Power MOSFET â'¢ Dynamic dv/dt , %. 360 I«R IRF9620 -iovU . -9v]ryr PULSE GS s , 361 IRF9620 i«r I -BbulPII ¿DS> j | LIL Dion) ROS(on) ma*. Tj â , Charge Vs. Gate-to-Source Voltage 362 IOR IRF9620 RoS(on) MEASURED WITH CURRENT PULSE OF 2.0 nt
-
OCR Scan
RG501 diode MOSFET marking YF

F9222

Abstract: IRF9220 IRF9620-3 3 .1 2 1.0 80 IRFP9620-3 3 .1 2 0 .2 4 40 IRF9620-3 3 .1 2 0.1 30 Unit K/W K/W K/W , IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/9221 1922219223 FEATURES · Low er R ds , as Ias Pd IRF9620 IRFP9220 IRF9220 -2 0 0 -2 0 0 IRF9621 IRFP9221 IRF9221 -1 5 0 -1 5 0 ±20 , Electronics 454 IRF9620/9621 /9622/9623 IRFP9220/9221 1922219223 IRF9220/9221Í9222/9223 ELECTRICAL , limited by max. junction temperature sRSAMSUNG Electronics 455 IRF9620/9621 /9622/9623 IRFP9220
-
OCR Scan
IRF9222 F9222 f 9222 l ir 9621 f9223 F9222 L F9620/IR F9622/IR F9623/IR F9223
Abstract: International rag Rectifier 4Ã"55452 I NR PD-9.351F IRF9620 INTERNATIONAL HEXFET , °C 360 â  llORl MflssMss o o m a a o INTERNATIONAL m b RECTIFIER h i n r IRF9620 , Impedance, Junction-to-Case Vs. Pulse Duration â  IRF9620 4655452 0014661 062 « I N R , MÃS5452 DD14flfl2 T i l m i U R INTERNATIONAL RECTIFIER bSE 1 > IRF9620 Tc. CASE , Circuit Fig. 17b â'" Switching Time Waveforms â  IRF9620 4Û5SMS2 0014003 ISS â  INR -
OCR Scan

IRF9620

Abstract: IRF9620 Data Sheet July 1999 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel , PART NUMBER IRF9620 PACKAGE TO-220AB G BRAND IRF9620 S NOTE: When ordering, use the , ://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF9620 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF9620 -200 -200 -3.5 -2 -14 ±20 40 0.32 290 -55 to , Resistance Junction to Ambient RJA 4-22 Typical Socket Mount IRF9620 Source to Drain Diode
Intersil
Original
ISO9000

F9622

Abstract: IRF9622 Input Impedance o »SOURCE - DRAIN GATE D e s c rip tio n The IRF9620, IRF9621, IRF9622 and , Otherwise Specified LIMITS CHARACTERISTIC Drain-Source Breakdown Voltage IRF9620, IRF9622 IRF9621, IRF9623 , x 0.8, V q s = T c = +1250c -2 .0 - On-State Drain Current (Note 2) IRF9620, IRF9621 IRF9622, IRF9623 Static D rain-Source On-State Resistance (Note 2) IRF9620, IRF9621 IRF9622, IRF9623 Forward , .) ÌRF9620, ¡R F 96 2 1, ÌRF9622, IR F9623 I q . DRAIN CURRENT (A M PER ES) -10 -20 -30
-
OCR Scan
F9622 NP-Q40 F9620 9JCS-43260 92CS-43J81

diode B15A

Abstract: B15A Switching Ease of Paralleling Simple Drive Requirements PD-9.351 F IRF9620 VDSS= -200V ^DS(on) = 1 , Typ. Max. 3.1 - 62 Units °C/W 0.50 - IRF9620 Electrical Characteristics @ Tj = 25°C (unless , , IRF9620 l0 . DR AIN CU RREN T (AMPERE5) V S D. SOURCE TO O R A IN V OLTAGE (VOLTS) Fig, 6 - , Charge Vs. Gate-to-Source Voltage 362 I«R IRF9620 s n .1 6 Tc. CASE TEMPERATURE ( °C
-
OCR Scan
diode B15A B15A
Abstract: P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9620PbF SiHF9620-E3 IRF9620 , IRF9620, SiHF9620 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , may apply Document Number: 91082 S-81272-Rev. A, 16-Jun-08 www.vishay.com 1 IRF9620, SiHF9620 , %. www.vishay.com 2 Document Number: 91082 S-81272-Rev. A, 16-Jun-08 IRF9620, SiHF9620 , IRF9620, SiHF9620 Vishay Siliconix Fig. 6 - Typical Transconductance vs. Drain Current Fig. 9 - Vishay Siliconix
Original

irf P-Channel MOSFET audio

Abstract: F9622 stability. The P-Channel IRF9620 device is an approximate electrical complement to the N-Channel IRF610 , I 4 05 5 4 5 c ! OQGÖfc.07 Ö RECTIFIER Units V V A A A V W W /K © IRF9620, IRF9621 , HE D IRF9620, IRF9621, IRF9622, IRF9623 Devices T-39-19 I 4055452 aOQflbCn 1 RECTIFIER , GQOfiblQ RECTIFIER Ö | INTERNATIONAL IRF9620, IRF9621, IRF , Waveforms C-359 INTERNATIONAL REC TIFIE R HE d I 4055452 QOGÖbll IRF9620, IRF9621
-
OCR Scan
irf P-Channel MOSFET audio IRF610 complementary k 3919 power MOSFET IRF610 SS452 IRFS620 IRFSG21 C-360
Abstract: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , -220AB IRF9620PbF SiHF9620-E3 IRF9620 SiHF9620 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620, SiHF9620 , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620, SiHF9620 Vishay Siliconix TYPICAL , ?91000 IRF9620, SiHF9620 Vishay Siliconix 4.0 80 µs Pulse Test VDS > ID(on) x RDS(on) max. RDS(on Vishay Siliconix
Original
2002/95/EC
Abstract: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , D P-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF9620PbF SiHF9620-E3 IRF9620 , ?91000 IRF9620, SiHF9620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620, SiHF9620 , ?91000 IRF9620, SiHF9620 RDS(on), Drain-to-Source On Resistance (Normalized) Vishay Siliconix 4.0 Vishay Intertechnology
Original
2011/65/EU JS709A
Showing first 20 results.