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Part : IRF152 Supplier : - Manufacturer : Bristol Electronics Stock : 7 Best Price : $6.75 Price Each : $9.00
Part : IRF152 Supplier : HARTING Manufacturer : Bristol Electronics Stock : 30 Best Price : - Price Each : -
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irf152 Datasheet

Part Manufacturer Description PDF Type
IRF152 Intersil 33A and 40A, 60V and 100V, 0.055 and 0.08 ?, N-Channel Power MOSFETs Original
IRF152 Fairchild Semiconductor N-Channel Power MOSFETs, 40 A, 60 V/100 V Scan
IRF152 FCI POWER MOSFETs Scan
IRF152 Frederick Components Power MOSFET Selection Guide Scan
IRF152 General Electric Power Transistor Data Book 1985 Scan
IRF152 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. Scan
IRF152 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF152 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan
IRF152 International Rectifier N-Channel Power MOSFETs Scan
IRF152 IXYS High Voltage Power MOSFETs Scan
IRF152 IXYS (IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE Scan
IRF152 IXYS High Voltage Power MOSFETs Scan
IRF152 Motorola Switchmode Datasheet Scan
IRF152 Motorola European Master Selection Guide 1986 Scan
IRF152 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan
IRF152 N/A Basic Transistor and Cross Reference Specification Scan
IRF152 N/A Shortform Transistor PDF Datasheet Scan
IRF152 N/A Shortform Transistor PDF Datasheet Scan
IRF152 N/A Shortform Datasheet & Cross References Data Scan
IRF152 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

irf152

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF150 IRF151 IRF152 IRF153 V DSS ^D S(on) *D 100 V 60 V 100 , IRF150/IRF152 for IRF151/IRF153 VDS= Max Rating VDS= Max Rating Vg s = ± 2 0 V X VGS= 0 100 60 0.8 Tc , ) x ^DS(on) max for IRF150/IRF151 for IRF152/IRF153 ^DS (on) Static drain-source on resistance VGS= 1 0 V for IRF150/IRF151 for IRF152/IRF153 lD = 20 A 0.055 0.08 Q Q ENERGY TEST ^ IS , IRF152/IRF153 L = 100 40 33 A A DYNAMIC 9fs * ^iss ^oss ^rss Forward transconductance Input -
OCR Scan
irf 150 irf 151 IRF152/IRF153 SC-0338 SC-0339 SC-02/
Abstract: ^DS(on) 0.055 a 0.055 fi 0.08 0.08 ·d 40 A 40 A 33 A 33 A TYPE IRF150 IRF151 IRF152 IRF153 VDss , voltage drain current (VGS = 0) Gate-body leakage current (VDg = 0) Iq- 250 fiA for IRF150/IRF152 for , /IRF151 for IRF152/IRF153 VGS= 1 0 V for IRF150/IRF151 for IRF152/IRF153 lD= 20 A RDS (on) Static , V starting Tj = 25°C for IRF150/IRF151 for IRF152/IRF153 L = 100 jkH 40 33 A A DYNAMIC 9(8 , voltage for for for for IRF150/IRF151 IRF152/IRF153 IRF150/IRF151 IRF152/IRF153 lSD= 4 0 A lSD= 3 3 -
OCR Scan
LD20A 00217S2 T-39-13 D021753
Abstract: MODE POWER MOS TRANSISTORS TYPE IRF150 IRF151 IRF152 IRF153 V DSS RDS(on) 0.055 n 0.055 n 0.08 , leakage current (VDS = 0) lD= 250 /¿A for IRF150/IRF152 for IRF151/IRF153 VGS= 0 100 60 Tc = 125 , /IRF151 for IRF152/IRF153 ^ D S (on) Static drain-source on resistance VGS = 10 V for IRF150/IRF151 for IRF152/IRF153 lD= 20 A 0.055 0.08 fi fi ENERGY TEST ·uis Unclamped inductive switching current (single pulse) VDD= 30 V starting T j= 2 5 °C for IRF150/IRF151 for IRF152/IRF153 L = 100 40 33 A -
OCR Scan
Abstract: , IRF152, IRF153 N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V- 100 V rDs , IRF150, IRF151, IRF152 and IRF153 are n-channel enhancement-mode silicon-gate power field-effect , DESIGNATION 92CS-37801 JEDEC T0-204AE Absolute Maximum Ratings Parameter IRF1 50 IRF151 IRF152 IRF1 53 , , IRF151, IRF152, IRF153 Electrical Characteristics @Tq = 25°C (Unless Otherwise Specified) Parameter Type Min. Typ. Max. Units Test Conditions BVqss Drain Source Breakdown Voltage IRF150 IRF152 100 - - -
OCR Scan
IRF162 IRF163 IRF161 1RF16 circuits of IRF150 IRFI50 92CS-33741 75BVDSS
Abstract: ) PRODUCT SUMMARY ' Part Number Vos Ros , Drain-Source Breakdown Voltage . BVoss IRF150 IRF152 100 V Vgs=0V lo=250f/A IRF151 IRF153 60 - - V Gate , =125°C On-State Drain-Source Current (2) lD(on) IRF150 IRF151 40 - a VDS>lD(on)XRDS(on) ma*., V , =10V, Id=20A IRF152 IRF153 - 0.06 0.08 0 Forward Transconductance (2) 0fs ALL 9:0 12.3 â'" 0 VDS>lD(on -
OCR Scan
IRF150 MOSFET LS 5087 MOSFET IRF150 IRF150 To3 package IRF150 "on semiconductor" IRF-150 IRF150/151/152/153
Abstract: HARRIS S E M I C O N D U C T O R IRF150, IRF151, IRF152, IRF153 33A and 40A, 60V and 100V , IRF150 IRF151 IRF152 IRF153 PACKAGE T0-204AE T0-204AE T0-204AE TO-2Q4AE BRAND IRF150 IRF151 IRF152 IRF153 , Procedures. Copyright © Harris Corporation 1997 , File Number 1824.2 IRF150, IRF151, ÌRF152, IRF153 , 1.2 150 -55 to 150 300 260 IRF152 100 100 33 20 132 ±20 150 1.2 150 -55 to 150 300 260 IRF153 60 60 33 , Drain to Source Breakdown Voltage IRF150, IRF152 IRF151, IRF153 Gate to Threshold Voltage Zero Gate -
OCR Scan
TA17421 TB334
Abstract: S E M I C O N D U C T O R IRF150, IRF151, IRF152, IRF153 33A and 40A, 60V and 100V, 0.055 and , IRF152 IRF153 PACKAGE TO-204AE TO-204AE TO-204AE TO-204AE BRAND IRF150 IRF151 IRF152 IRF153 G S , 1824.2 1 IRF150, IRF151, IRF152, IRF153 Absolute Maximum Ratings TC = 25oC, Unless Otherwise , 260 IRF151 60 60 40 25 160 ±20 150 1.2 150 -55 to 150 300 260 IRF152 100 100 33 20 132 ±20 150 1.2 150 , uA uA MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF150, IRF152 IRF151, IRF153 Gate to Harris Semiconductor
Original
12V 40A voltage regulators
Abstract: Semiconductor IRF150, IRF151, IRF152, IRF153 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm , Components to PC Boards" Symbol Ordering Information PART NUM BER IRF150 IRF151 IRF152 IRF153 PACKAGE TO -204AE TO -204AE TO -204AE TO-2Q4AE BRAND IRF150 IRF151 IRF152 IRF153 NOTE: W hen ordering, include , 1997 , File Number 1824.2 IRF150, IRF151, IRF152, IRF153 Absolute Maximum Ratings T c = 25 , ±20 150 1.2 150 -55 to 150 300 260 IRF152 100 100 33 20 132 ±20 150 1.2 150 -55 to 150 300 260 IRF153 -
OCR Scan
TRANSISTORS 132 GD kiv-8 RF150 RF153
Abstract: .100V , . 100V , 150 irf150 100 0.08 33.0 150 irf152 100 0.085 27.0 125 irf140 100 0.11 24.0 125 irf142 100 , 1.4 20 vn2406d Siliconix 1-5 IRF150 â  IRF151 100V IRF152 â  IRF153 N-Channel Enhancement Mode , 0.055Q 40A IRF151 60V TO-3 IRF152 100 V 0.080 33A IRF153 60V s ABSOLUTE MAXIMUM RATINGS (Tc -
OCR Scan
VN64GA IRF1501 I304 1RF720
Abstract: , IRF151, IRF152 and IRF153 are n-channel enhancement-mode silicon-gate power field-effect transistors , DESIGNATION 92CS-3780I JEDEC TO-2Q4AE Absolute Maximum Ratings Parameter IRF150 IRF151 IRF152 IRF153 Units , ?-/3 Standard Power MOSFETs _!_ IRF150, IRF151, IRF152, IRF153 Electrical Characteristics = 25Â , Breakdown Voltage IRF150 IRF152 100 - - V VQS =â  OV lD = 2 50/i A IRF151 IRF153 60 - - V ^GSfth , max.' VGS = 10V IRF152 IRF153 33 - - A ^DS(on) Static Drain-Source On-State Resistance (D IRF150 -
OCR Scan
7S001 R01E IRF160 9ZCS-3374I
Abstract: MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF150 IRF151 IRF152 TMOS POWER FETs 33 and 40 AMPERES rDS(on) = 0.055 OHM 60 and 100 VOLTS rDS(on) = 0 08 OHMS 100 VOLTS Power Field Effect , Min Max [ Unit V{BR)DSS IRF150. IRF152 IRF151 'DSS TJ = 125°C) 'g s s f gssr - - 0.2 1 , Transconductance (V d s > 2.2 v, id = 20 a i (V d s 3s 2.6 V, id = 20 A) IRF150, IRF151 IRF152 *D(on) IRF150, IRF151 IRF152 9FS IRF150, IRF151 IRF152 9 9 - v G Slth) rDS(on) 2 4 Vdc Ohm - - 40 -
OCR Scan
IRF150-152
Abstract: SUMMARY ' Part Number IRF150 IRF151 IRF152 IRF153 Vds 100V 60V 100V 60V R os , 150 1.2 - 5 5 to 150 300 IRF150 100 100 IRF151 60 60 ±20 33 20 132 33 20 132 IRF152 100 100 IRF153 60 , Type Min IRF150 100 IRF152 BVoss IRF151 60 IRF153 ALL ALL ALL ALL 2.0 - - - - IRF150 40 IRF151 lD (on) IRF152 33 IRF153 (Tc= 25°C unless otherwise specified) Typ Max Units V - - - - - 4.0 100 , On-State Rdsíoh) Resistance (2) IRF152 IRF153 Forward Transconductance (2) Input Capacitance Output -
OCR Scan
IRF150 on semi 00GS435
Abstract: -43 ! H E 0 I 4â55H S2 0 OCH üb 7 ? I IRF150, IRF151, IRF152, IRF153 Devices , 160 ±20 (See Fig. 14) (See F ig -14) 1 132 T IRF152 100' 100 30 20 132 * ' > IRF153 60 QO 30 20 , °C (Unless Otherwise Specified) Parameter SVd SS Drain - Source Breakdown Voltage Type IRF150 IRF152 1RF151 , ) Gate-Source Leakage Reverse Zero Gate Voltage Drain Current On-State Drain Current -
OCR Scan
HA711 IRF15 IRF15S
Abstract: Inductive L o a d s IRF150 IRF151 IRF152 T M O S P O W E R F ET s 33 and 40 A M P E R E S tD S (o n ) = , | Unit V(BR)DSS IRF150, IRF152 1RF151 ID S S TJ - 125°C) Ig s s f iq s s r Vdc 100 60 mAdc .0.2 1 100 100 nAdc nAdc - - VGS(th) rDS(on) IRF150,1RF151 IRF152 *D|onÎ IRF150, IRF151 IRF152 9FS -
OCR Scan
Abstract: 20A 0.055 - IRF152/153, IRF152R/153R T urn-O ff Delay Time _ 33 IRF152/153 , escription The IRF150, IRF151, IRF152, and IRF153 are n-channel enhancement-mode silicon-gate power fleid-effect transis­ tors. IRF150R, IRF151R, IRF152R, and IRF153R types are advanced power MOSFETs designed , IRF151R IR F152 IRF152R IRF153 1RF153R UNITS 100 100 60 60 100 10 60 60 V V , Number 1824.1 â  43G2271 00530^4 7flS â  HAS ÌR F150, IR F151, IRF152, IR F153 -
OCR Scan
OR/151R/152R/153R T0-204A 43D2571 F151R JRF152R F153R
Abstract: IRF152,153 33 AMPERES 100, 60 VOLTS RDS(ON) = 0.08 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device rugged-ness and reliability. This design has been optimized to give superior performance in most , paralleling maximum ratings (Tc= 25° C) (unless otherwise specified) RATING SYMBOL IRF152 IRF153 UNITS , IRF152 (VGS = 0V, lD = 250 /uA) IRF153 bvdss 100 60 â'" â'" Volts Zero Gate Voltage Drain Current (VDs = -
OCR Scan
TC-25 250MA RDS10N
Abstract: TO-3 IRF150 â'" â'" IRF151 60 0.055 TO-3 IRF151 â'" â'" IRF152 100 0.08 TO-3 IRF152 â'" â'" IRF153 -
OCR Scan
HPWR-6502 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf 150 equivalent 2sk135 equivalent hitachi 2sk135 IRF223 IRF220 equivalent IRF233 PWR-6501 IRF441 IRF340
Abstract: TO-3 IRF150 â'" â'" IRF151 60 0.055 TO-3 IRF151 â'" â'" IRF152 100 0.08 TO-3 IRF152 â'" â'" IRF153 -
OCR Scan
2SK133 2SK176 IRF131 IRF143 2SK134 equivalent 2SJ48 equivalent 2SJ50 equivalent 2SJ49 equivalent 2SJ49 2sk134 HPWR 6501 2SK134 2SK135 IRF222 2SK175
Abstract: IRF152 IRF153 IRF240 IRF241 IRF242 IRF243 IRF340 S G S -TH O M S O N BUZ11A BUZ11FI BUZ11FI BUZ11S2 , BUZ72A SGSP367 BUZ74 BUZ74A BUZ76 BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 , IRF152 IRF150 SGSP577 SGSP574 SGSP575 SGSP575 SGSP577 487 307 307 493 493 493 499 505 505 511 511 517 -
OCR Scan
2SK350 IRF722FI IRF540FI SGSP381 BUZ71 SGSP3055 IRF722P IRF732P IRF730P SGSP312 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312
Abstract: IRF152 IRFP152 40 0.055 IRF150 IRFP150 150 0.25 7.50 IRFD2Z3 0.32 5.00 IRFD2Z1 0.45 -
OCR Scan
IRFD113 IRFD111 IRFD123 IRFD121 IRF513 IRF511 IRFD110 IRF5134 1RF542 IRF540 IRF120 IRF611-3 IRFF113 IRFF111
Abstract: ) GATE D escription The IRF150, IRF151, IRF152, and IRF153 are n-channel enhancement-mode , 2%. IRF151 IRF151R 60 60 40 25 160 ±20 150 1.2 160 150 -5 5 to + 150 300 IRF152 IRF152R 100 10 , Current (Note 2) IRF150/151, IR F150R/15 1 R IRF152/153, IRF152R/153R Static D rain-Source O n-State -
OCR Scan
IBM50/151/152/153 IRF150R/151R/152R/153R 75BVOSS
Abstract: TO-3 IRF150 â'" â'" IRF151 60 0.055 TO-3 IRF151 â'" â'" IRF152 100 0.08 TO-3 IRF152 â'" â'" IRF153 , IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF142 100 0.18 14.0 -
OCR Scan
IRF830 equivalent 2SK220 2SK221 2SK259 IRF323 2SK260 IRF322
Showing first 20 results.