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ir sensing circuit using LM358

Catalog Datasheet MFG & Type PDF Document Tags

LM256A

Abstract: ir sensing circuit using LM358 LM158/LM258/LM358/LM2904 National Semiconductor LM158/LM258/LM358/LM2904 Low Power Dual , dual supplies Allows directly sensing near GND and Vout also goes to GND Compatible with all forms of , Copyrighted B y Its Respective Manufacturer IT Ln LM158/LM258/LM358/LM2904 Absolute Maximum Ratings If , /Distributors for availability and specifications. (Note 9) LM158/LM258/LM358 LM158/LM2S8/LM358 LM2904 LM2904 , 'Cto +70°C -40°Cto +85'C LM358 Differential Input Voltage 32V 26V LM258 -25°C to +85°C Input Voltage -0.3V to
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LM158 LM256A ir sensing circuit using LM358 lm35b LM356A LM356 LM256 LM158/LM258/LM358/LM2904 LM1558/LM1458 SG1124 TL/H/7787-33

smd transistor marking A6

Abstract: ir sensing circuit using LM358 mounted on printed circuit boards bump side down using the same methods as other small surface mount , LM358 is also available in standard SOIC-8, DIP-8, and TO-5 packages. Please refer to the datasheet , information on those packages. 1.2 Technical Product Description As with previous versions of the LM358, the LM358BP is manufactured using National's single-layer metal bipolar process. National's name for the wafer-level chip-scale package used for the LM358 is micro SMD. Since assembly of the die is done
National Semiconductor
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smd transistor marking A6 TRANSISTOR SMD MARKING CODE a6 water level control using lm358 TRANSISTOR SMD MARKING CODE LF LM358I temperature control using lm358 AN-1112

DH0165

Abstract: dh0165 8 pin ic - V REF, KA431 R13 or 1-2. Current control circuit E( 4 ) 2. Using the Fairchild Power , are demanding more conveniency and efficiency. Much of this equipment is currently using Li-ion batteries, which are light and have high energy density. The chargers for these batteries are made using , control circuit ground. Vcc (#7): This is the positive supply voltage input. During startup, power is , inside the IC in order to get the effect of eliminating Rstart, which caused a loss in the systems using
Fairchild Semiconductor
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AN4111 DH0165 dh0165 8 pin ic ic lm358 inverter block diagram opto coupler 817 comparator circuit using op-amp lm 358 Ringing Choke Converter

DH0165

Abstract: ee1614 used separately, an R-C filter is used in the drain current sensing circuit to reduce the spike , . Current Control Circuit Constant current is composed section B of Op-Amp KA358 (LM358) and KA431 , and efficiency. Much of this equipment is currently using Li-ion batteries, which are light and have high energy density. The chargers for these batteries are made using various topologies. One of the , when the feedback voltage is above 4.5V. GND (#3,#4,#5,#6): These pins are the control circuit
Fairchild Semiconductor
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ee1614 817a opto coupler transistor ka431az EE-1614 817A EE1614 H

1N5B19

Abstract: UPL1J680MPH requires a minimum number of external components and can operate using a standard series of inductors , circuit design, refer to Application Note 14. DGDEMLil 4-110 EÃ1 1997 Miere! MIC4575 L1 , short circuit to ground for input voltage above 24V. Contact Micrel for availablity of 40V parts. â , guaranteed to survive a short circuit to ground for input voltage above 24V. Contact Micrel for availably of , U2 National LM358 Figure 21. Low Output-Voltage Regulator (1V) b D à ö fin DG0
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1N5B19 UPL1J680MPH IC4575 LM2575 1N5819 1N5236 HM77-11003 VN2222LL

dh0165

Abstract: 817A OPTO-coupler - V REF, KA431 R13 or 1-2. Current control circuit E( 4 ) 2. Using the Fairchild Power , using Li-ion batteries, which are light and have high energy density. The chargers for these batteries are made using various topologies. One of the issues that came with the smaller equipment is that , (#3,#4,#5,#6) : This pin is the control circuit ground. Vcc (#7): This is the positive supply voltage , caused a loss in the systems using the conventional 2 chip 1 package Fairchild Power Switch(FPS). This
Fairchild Semiconductor
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FSDH0165 817A OPTO-coupler opto 817 transistor ka431 KA4312 mb6s diode RMS TO DC converter using LM358

ir sensing circuit using LM358

Abstract: LM2575-ADJ and voltage are similar to the previous circuits. This circuit has the current sensing resistor, for , a low dropout constant voltage charger using a MOSFET as the pass element, but this circuit does not , 94 56 94 56 II, ir En Output Noise Voltage Iout = 1 mA, 10 Hz , II, ir En Output Noise Voltage Iqut = 1 mA, 10 Hz , thermal resistance (9JA) when soldered to a printed circuit board is approximately 306°C/W for the M5
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LM2575-ADJ tl 2n2222 pin details RF Prime lm317 pnp Transistor IC LM317 use in 12v charger circuit pi controller with op amps LM3420-4 LM3420

transistor 2sC 4242

Abstract: lm338 application notes using a MQSFET as the pass element, but this circuit does not include current limiting. This circuit , printed circuit board is approximately 306"'C/W for the MS package. Note 3: The human body model is a 100 , ''C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality , ). Note 6: Actual test is done using equivalent current sink instead of a resistor bad. Note 7: V s a , Resistance (Continued) Circuit Used fo r Response Time +V* Circuit Used for Bode Plots OUTPUT
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transistor 2sC 4242 lm338 application notes transistor 2n22 charging circuit lm317 LM317 CURRENT LIMIT lm350

battery charger on LM358

Abstract: lm317 hp similar to the previous circuits. This circuit has the current sensing resistor, for the constant current , dropout constant voltage charger using a MOSFET as the pass element, but this circuit does not include , ) rt Internal Feedback Resistor (Note 8) 181 227 135 227 135 If, ir En Output Noise Voltage Iout = 1 , to a printed circuit board is approximately 306°C/W for the M6 package. Note 3: The human body , at 25'C. Limits over the operating temperature range are guaranteed through correlation using
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battery charger on LM358 lm317 hp charger on LM358 12v battery charger lm317 2n2222 itt lm555 LM555 TL/H/12359-16

lm358 li ion charger circuit

Abstract: RMS TO DC converter using LM358 to be different. This application note covers real-world circuit designs by showing a collection of , surface mount components, while others employ low-cost components. Every circuit in this application , . 178 MIC4575 Remote Sensing Regulator . Fig. 46 , functional to input voltage to 40V, they are not guaranteed to survive a short circuit to ground for input , MIC457x family is functional to input voltage to 40V, they are not guaranteed to survive a short circuit
Micrel Semiconductor
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lm358 li ion charger circuit lm358 sum Lithium Ion Cells 12V DC DC 3A charger MIC4576BT MIC4576 PL52B-68-500

1N5819 MIC

Abstract: Nichicon hm regulators requires a minimum number of external components and can operate using a standard series of , . For a mathematical approach to component selection and circuit design, refer to Application Note 14 , 40V they are not guaranteed to survive a short circuit to ground for input voltage above 24 V. Contact , i R2 a D1 k SS26 11 % C 2 I1 % Qk ~ f~ 3300pF _ 68^F IR 1 20V E 1.50k _L_ T cC3 . , voltage to 40V they are not guaranteed to survive a short circuit to ground for input voltage above 24V
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M1C29150 1N5819 MIC Nichicon hm 1N414B 9435 regulator ic D03316P-683 UPL1V151MPH UPL1C331MPH 2222U MIC2506 MIC4575BT 1N5019

DIODE smd marking 22-16

Abstract: vco lm358n printed circuit boards bump side down using the same methods as other small surface mount packages. For , part on application printed circuit board bump side down using same methods as other small surface , Micro SMD Qualification Package LM358, LMC6035, LM431, LM78L05, and LMC555 National's Micro SMD , advantage of a surface mount package that is smaller than SOT-23 and SC-70. The LM358 is also available in , . 1.1.2 Technical Product Description As with previous versions of the LM358, the LM358BP is manufactured
National Semiconductor
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DIODE smd marking 22-16 vco lm358n LM358 laser driver lm358 current limiter Zener diode smd marking code 621 adjustable zero span circuit with lm358
Abstract: . The ML4410 contains a patented back-EMF sensing circuit which samples the phase which is not , (no neutral required) to determine the proper commutation phase angle using phase lock loop , Microcontroller Interface for Optimized StartUp Sequencing and Speed Control â  Power Fail Detect Circuit with , Logic Output from VCO. J ^ M ic ro Linear A "0" activates the braking circuit. Current , MOSFET sinking transistors and PNP sourcing transistors) directly, and contains a special circuit to -
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ML4410CQ

LM358AT

Abstract: 358AN LM158/LM258/LM358/LM2904 March 1998 National Semiconductor LM158/LM258/LM358/LM2904 Low , pensated op am ps in a single package Elim inates need fo r dual supplies Allow s directly sensing near , Input C urrent (V,N < -0 .3 V ) (Note 4) O perating Tem perature Range LM358 LM258 LM158 Storage Tem , Mounting M ethods and T h e ir Effect on Product R eliability" fo r other m ethods of soldering surface m , ), (Note 9) V|N+ = 1V, -1 2 0 -1 2 0 dB 65 100 50 100 dB 65 85 50 70 dB 25 100 25 100 V/m V LM358 Min Ty p
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LM358AT 358AN ST LM 358N 1558/LM

motorola 1N4148

Abstract: JF SS34 covers real-world circuit designs by showing a collection of the most commonly used power supply circuits , low-cost components. Every circuit in this application note has been designed, built, and evaluated for , .178 Remote Sensing Regulator. .Fig. 4 6 . , ily is functional to input voltage to 40V, they are not guaranteed to survive a short circuit to , survive a short circuit to ground for input voltage above 24V. C ontact factory fo r availability of 40V
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motorola 1N4148 JF SS34 schematic apple 4 battery sb360 equivalent low esr panasonic fj 16MV220GX
Abstract: motor. The ML4510 contains a patented back-EMF sensing circuit which samples the phase which is not , windings (no neutral required) to determine the proper commutation phase angle using phase lock loop , â  Power fail detect circuit â  Drives external N-channel FETs and PNP'sor P-channel FETs , PH2 O TA O U T Å' UH 7 22 ~n pm O TA IN EH 8 21 ID Ir am p â , during start-up. A " 0" activates the braking circuit. ML4510 ABSOLUTE MAXIMUM RATINGS -
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ML451 ML4510CS

ir sensing circuit using LM358

Abstract: IRC520 Implementation of the Current Sense Function Virtual Earth Sensing The circuit that gives the best performance , Representation ' ot HEXSense Device u -ar Figure 5. Virtual Earth Sensing Circuit IFDII'J: POWER * REK&TMICE GROUND &F3ME Figure 6. Resistor Sensing Circuit However, this is not the case when it comes to , amplifier and the negative polarity of the output voltage. Resist or Sensing A second circuit, shown in , circuit the current-to-voltage translation is performed by the sensing resistor RT, while the operational
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IRC520 compare LM324 with LM741 LM358 vs LM741 LM324 vs LM741 IRCP150 Tektronix 7603 AN-959 46S-M20-S1905 J72-0403

ml4410

Abstract: 74HC14 oscillator application diagram a patented back-EMF sensing circuit which samples the phase which is not energized (Shaded area in , neutral required) to determine the proper commutation phase angle using phase lock loop techniques. This , Start-Up Sequencing and Speed Control Power Fail Detect Circuit with Delayed Braking Drives External , supply. Terminal which is sensed for power fail. A "0 " activates the braking circuit. Sets the threshold , ' Us mmho Power Fail Detection Circuit 12V Threshold Hysteresis 5V Threshold Hysteresis 3.8 9.1 9.8
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74HC14 oscillator application diagram 0DDSR31
Abstract: 60 120 The ML4411 contains a patented back-EMF sensing circuit which samples the phase which , (no neutral required) to determine the proper commutation phase angle using Phase Lock Loop , Start-Up Sequencing and Speed Control â  Power Fail Detect Circuit with Delayed Braking â  Drives , BRAKE A "0 " activates the braking circuit 13 Cos Timing capacitor for fixed off-time PWM , ) Transconductance Gain 9 .8 10.5 V Power Fail Detection Circuit 12 V Threshold mV 150 -
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ML4411A

ir sensor circuit diagram using LM358

Abstract: uPD5555G (Global Part Number) IR A- E710ST q w e 1 r qProduct ID wType eCharacteristics , Frequency Interference). ! Features ! Dimensions & Circuit Diagrams 4.7±0.1 45° 3.7±0.1 9.2 1 , Interference). ! Features ! Dimensions & Circuit Diagrams 4.7±0.1 41° 9.2 1. High sensitivity and , . Non directional sensing with wide F.O.V. 5. High immunity to the external noise (Vibration, RFI etc , Dimensions & Circuit Diagrams 4.7±0.1 50° 9.2 1. High sensitivity and excellent S/N ratio 2. High
muRata
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IRA-E700 IRA-E900 IRA-E940ST1 IRA-E420 ir sensor circuit diagram using LM358 uPD5555G b102k pyroelectric amplifier circuit B222K light sensor LM358 S21E3 S21E-3
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