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SNJ54148J Texas Instruments 10-Line To 4-Line And 8-Line To 3-Line Priority Encoders 16-CDIP -55 to 125 visit Texas Instruments
SN54148J Texas Instruments 10-Line To 4-Line And 8-Line To 3-Line Priority Encoders 16-CDIP -55 to 125 visit Texas Instruments
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Part : IN4148 Supplier : Micro Commercial Components Manufacturer : Bristol Electronics Stock : 9,900 Best Price : - Price Each : -
Part : IN4148-T Supplier : Diodes Manufacturer : Bristol Electronics Stock : 10,000 Best Price : - Price Each : -
Part : IN4148W-7 Supplier : Diodes Manufacturer : Bristol Electronics Stock : 2,490 Best Price : - Price Each : -
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in 4148 Datasheet

Part Manufacturer Description PDF Type
IN4148 Shanghai Sunrise Electronics SILICON EPITAXIAL PLANAR SWITCHING DIODE Original

in 4148

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: IN 4148, IN 4150, IN 4151, IN 4448, Small Signal Si-Diodes Si-Allzwech-Dioden Nominal , Type Typ IN IN IN IN 4148 4150 4151 4448 Repetitive peak reverse voltage , 60 ^0 0 1 ^ 5 4 0 0 0 0 2 1 4 ^40 IN 4148, IN 4150, IN 4151, IN 4448, 25 °C Type Typ IN IN IN IN Forward voltage DurchlaÃspannung VF [V] at IF [mA] 4148 4150 4151 4448 , -35 Weight approx. Gewicht ca. Dimensions / MaÃe in mm 0.13 g Standard packaging taped and reeled -
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DO-35

T 4148

Abstract: in 4148 IN 4148 BAV 70 A4 (2) f 70 200 855 10 5 70 A2 x 1N 4148 BAV 99 A7 (3) 9 70 200 855 10 2,5 70 A2 x 1N 4148 (1 (Common anode (2)Common cathode (3|Serie diodes Anodes communes Cathodes
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BBY31 T 4148 in 4148 MARKING a1n bav 56 A7 marking marquage a7 CB-166 A1N914
Abstract: IN 4148 IN 4148 IN 4151 IN 4154 IN 4446 IN 4447 IN 4448 IN 4449 IN 4454 BAY 03 % max , ! 7.5! 7-5: 75 75 75 3.75- 6 3.3-4.8 4.4-6.5 DIODES c'-i26 VF ra in . -m a x . (mAJ , ! $ P relim in a ry data I 510.425 1 0.55 1 mW S I L I C O N : T Y P E ! ! CAPACITANCE -
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JTX1N4148-1

Abstract: IN4148 BLACK CATHODE BAND & BLACK DIGITAL PRINT IN 4148 -1 XXYY (XX= LAST TWO NUMBERS OF THE YEAR, YY
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S4148HRQ 1N4148-1JAN JTX1N4148-1 jtx1n4148 9356 s4148
Abstract: polarity in 4148 diodes. A bypass capacitor (.01uF) is required for each voltage supply. For further COBHAM
Original
MILSTD-883 877-COBHAM7

1411d

Abstract: in 4148 8 7 6 5 4 3 2 1 D 82.19 mm [3.236 in] 71.07 mm [2.798 in] 63.14 mm [2.486 in] 56.79 mm [2.236 in] D BB n4.76 mm [0.188 in] 31.95 mm [1.258 in] C 21.64 mm [0.852 in] 41.48 mm [1.633 in] C 9.53 mm [0.375 in] 1.02 mm [0.040 in] 18.82 mm [0.741 in] 40.46 mm [1.593 in] B 51.94 mm [2.045 in] - 12 GAUGE NATURAL ALUMINUM BODY - 1411DU - ASA 61 GREY , this enclosure available in STEP or IGES. B 4.55 mm [0.179 in] BB 79.38 mm [3.125 in
Hammond Manufacturing
Original
1411d 1411D 1421J6

T 4148

Abstract: n4148 diodes: IN 4148 - IN 914 IN 4149 - IN 916 1 N 4446 1 N 4447 1 N 4448 1 N 4449 1 N 914 A 1N 916 A 1 N 914 B 1 N 916 B Dimensions in mm =â'¢Â¡>6 Standard glass case 54A2 DIN41 880 JEDEC DO 35 Weight max , Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV 1N 4148, IN 4446, IN 4448 1N 4149,1 N 4447,1 N 4449 , Applications: Extreme fast switches r-oz-oi Features: â'¢ â'¢ 1N 4148, 1N 4446, 1N 4448 also available as , /W T1.2/948.0588 E 179 AEG CORP 17E D â  002T42b 1 N 4148 -1N 4149 -1N 4446 1 N 4447 â'¢ 1 N
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n4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 002T42 N4148

Tic 4148

Abstract: adams russell load. " M e a s u re d at 1 M H z Rep rate into o p p o site p ola rity in 4148 diodes. ' " H e rm e
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Tic 4148 adams russell 4010-15M FP-33

D4148

Abstract: OA91 ) Switch OA 79 D542 D07 Ge Pt. Contact 45 100 < 4.0 (30) < 18 (10) FM Detector IN 4148 D4148 D035 Si Diffused 100 225 , Diodes and Rectifiers Miniature Diodes in glass package Type Maximum ratings Characteristics , 4002 D36/100 100 1 0.75 10 50 150 , 4006 D36/800 800 1 0.75 10 50 150
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OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 D36/50 D36/200 D36/400 D36/600 D36/1000
Abstract: into a 10 O hm resisitive load ` ` M ea sure d at 1 M H z Rep. Rate into o p p o site p o la rity in 4148 diodes. " ` H erm etic Pin Configuration Ordering Information Model No. 4040-11M D -
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FP-35

7070-29 Caddell-Burns

Abstract: |xF ''T- tt IN 4148 ! I ÍN 4148 A -» V C P=-(V O U T- 2V f)* _ What Value of , each cycle. This, along with the input *Vf=F O R W A R DD IO D EV O L T A G E IN 4148 _5 r-W IN 4148 V C P=2(V0U T- V f )* VOIT - H-10(iF 10fiF C P Figure 3. Using the Charge , DC-DC converters for use in low-power, high-efficiency switching regulator applica tions. The only , low battery detection circuitry and a charge pump output for generating a negative voltage in dual
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7070-29 Caddell-Burns MAX631 MAX632 MAX633 MAX631/632/633 MAX631XCPA MAX631XCSA
Abstract: 75 1 20 200 50 25 50 3 4 10 IN 4148 IN 4149 IN 4151 IN 4152 IN 4153 IN 4154 IN 4305 4 DO35 CONTOUR OrTIONAL MftHIX DIMNSIOHS « » 9. SLUGJ, IP ANY, JHAU , 10 10 10 10 IN 4444 IN 4446 IN 4447 25- 35 50- 75 50- 70 75-100 75-100 75 150 200 , 100 100 50 50 50 25 50 50 20 20 4 2 2 2 4 2 7 4 4 10 10 10 10 10 IN 4448 IN 4449 IN 4454 75-100 75-100 50- 75 75 75 75 1 1 1 100 30 10 25 100 New Jersey Semiconductor
Original

IN4448

Abstract: CT54 =226 mA IN 914 75 1.0 10 .025 20 4 DO-35 IN 4148 75 1.0- 10 .025 " "20 4 DO-35 IN 4448 75 1.0 200 .025 75 4 DO-35 IN 4531 75 1.0 10 .010 .75 4 DO-34
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IN4448 CT54 CT40

4020-11M

Abstract: SDI Microwave diodes into a 10 O hm resisitive load. "M e a s u re d at 1 M H z Rep. Rate into o p p o site pola rity in 4148 diodes. ' ' 'H e rm e tic Pin Configuration 0.010 ±0002 - INDICATES PIN 1 0.050 22 -VCC ( - 5
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4020-11M SDI Microwave diodes FP-34

c4100

Abstract: 55FT RFC2 in parallel with 15 1/2 Resistor L5,L1= 50W Stripline 2" long L4,L3= 34W Stripline 300 mils long CR1 R1= 500 ohm Pot R2= 4.7 Kohm 1/4 W R3= 47 ohm 1/4 W R4= 1 ohm 3 Watt, 1% Cr1= IN 4148 Q1 , HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE
Ghz Technology
Original
UTV010 c4100 55FT ic 4148 MJE 172 TRANSISTOR 4148

5011N

Abstract: IC la 4148 TY P ES IN 4148 WM9 1N4446 THRU 1N4449 SILICON SWITCHING DIODES B U L L E T IN N O . D L , 1 If 1N 4148 1N 4149 1N 4446 1N 4447 1N 4448 1N 4449 M IN MAX MIN M AX MIN M AX MIN M AX MIN M , < 1 2 1 1 50 50 50 50 1 1N 4148 1 1 N 4 M 9 | 1N 4 4 4 6 | 1 N 4 4 4 7 | 1N 4 4 4 8 | 1 N 4 4 4 9 | 75 , IN P U T V O L T A G E W A V E F O R M FIG U RE 1 - REVERSE RECO V ER Y TIME NOTES: a. The input , characteristics: tf < 0.6 ns, Zjn = 50 O IN P U T - O O U TPU T IN P U T A d ju s t for Ip = 5 0 mA
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5011N IC la 4148 wm9 05 1N44 1N914 1N4531 1N4149 1N916 1N914A 1N4447

CJ 4148 ZENER

Abstract: Zener Diode 4148 30 If = 10mA IN 4148 75 225 75 500 175 1.0 10 0.025 20 4.0 0 4 2. TEMPERATURE & BIAS , ) MAX (uA) Vrm (V) PACKAGE IN 4001 50 100 50 IN 4002 100 200 50 IN 4003 200 300 50 IN 4004 400 500 1 50 175 -65-175 1.1 1 10 RATED DOâ'"41 IN 4005 600 750 30 IN 4006 800 1000 30 IN 4007 1000 1200 30 14 9000-350 KOREA ELECTRONICS CO LTD 45E ]> â  S2Sfl404 , DEVICE (V) (mA) (mA) (mA) (mA) (V) (M> (V) (PF) (MHz) IN 60 M AM -24 70 200 20 3 1 100 -10 0.8 1 DOâ
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KDR812 BZX83 CJ 4148 ZENER Zener Diode 4148 zener T 4148 diode IN-4002 CJ 4148 zener diode ZENER 4148 KDR814 F-126 KDR816 KDR818 BZX83-C4V7
Abstract: D atash eet 500 mW EPITAXIAL PLAN AR DIODES Semiconductor M echanical Dim ensions JEDEC DO-35 . t .0 6 0 1 .0 90 Ip 1 .1 2 0 , 1 .0 0 h D . , 1 1 t .0 24 typ. Features â  PLANAR PROCESS â  INDUSTRY STANDARD DO-35 PACKAG E â  500 mW POWER DISSIPATION â  M EETS UL SPECIFICATION 94V-0 IN4148 E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 ° C . Units IN 4148 Maximum R atings Peak Reverse Voltage. V RM 100 V o lts R M S -
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46X21 D0201AD 26X10X10C 26X10X1 48X22X36 21X9X8

TBA120U

Abstract: U489 ~150)jA IN 4148 Off On Mute We-10V Max. Q = 45 ' ), k = 4 % Q = 201 ), k = 1 % Pin 8 Pin 12 Vo(AF , Copyrighted By Its Respective Manufacturer 21 TBA 120 U Dimensions in ran E=! inr-ji ¡rri a1
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TBA120U U489 tba 610 QS31Q-05

1C41

Abstract: simco ohm Pot R2 â'" 4.7 Kohm 1/4 W R3 - 47 ohm 1/4 W R4 â'" 1 ohm 3 Watt, 1% CRj - IN 4148 Q1 - MJE172 , tested specifically for use in Class A UHF TV applications. UTV-020 2 WATT - 25 VÃ'LT 470-860 MHz UHF , ., Bridgend, Mid Glamorgan, South Wales, UK CF31 3LQ, Phone (0656) 68021 Printed in USA 521 Ã' 182998 AGRIAN , microstripllne RFC1 > 5 Turns, 24 Awg on 125 ^Torroid RFC2 in parallel with 15 1/2 W Resistor L5, L1 â'" 50
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1C41 simco linear amplifier 470-860 1j25 470-860 mhz Power amplifier 5 w acrian RF resistor 860MH VCC-25V F-860MHZ FTANT50V
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