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DMN4008LFG-7 Diodes Incorporated Small Signal Field-Effect Transistor visit Digikey
DMN4008LFG-13 Diodes Incorporated Small Signal Field-Effect Transistor visit Digikey
CAT4008Y-T2 ON Semiconductor LED Driver, 8-Channel, Constant Current, TSSOP16, 4.4x5, 2000-REEL visit Digikey
MBRT40080R GeneSic Semiconductor Inc Rectifier Diode visit Digikey
MBR40080CTR GeneSic Semiconductor Inc Rectifier Diode visit Digikey
MBRT40080 GeneSic Semiconductor Inc Rectifier Diode visit Digikey

in 4008 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: rectified sinusoid vg. The energy Eg is stored in the primary winding. The rectifying diode D1 is reverse , in Q1 ramps up linearly at a rate of: dig (t ) dt MK-4008-B 11/20/07 = vg (t ) LM , operates in this mode. MK-4008-B 11/20/07 Page iW1692 Low-Power Off-line Digital PWM , should be. Included in the snubber network is also a resistor (R6) in series with the diode (D6). D6 , response that is much faster than traditional solutions, resulting in improved dynamic load response. The iWatt
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MK-4008-B IN4007 diode detail theory information mk4008 iwatt marking IN4007 diode forward reverse bias DIODE 4008 W1692
Abstract: )/VIN. The Schottky diode D1, shown in the Typical Application on the back page, conducts during the , LTC®4008 is a constant-current/constant-voltage charger controller. The PWM controller uses a , , Input Current Limiting and Faults Charging Current Monitor Output Available in a 20-Pin Narrow SSOP , CHARGING CURRENT MONITOR 4008 TA01 4008fb 1 LTC4008 ABSOLUTE MAXIMUM RATINGS (Note 1 , UVLO Undervoltage Lockout Threshold Shutdown Threshold at ACP/SHDN Operating Current in Shutdown Linear Technology
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Si4431B LTC4008-1 LTC4008EGN NTC 8 NTC 150k Intel 4008 LT1769 LTC1778 LTC1960 LTC3711 LTC4006 LTC4007
Abstract: . This activity is diagrammed in Figure 1. 4008 F01 Figure 1 VREF V ­ V + 11.67uA · 3.01k = , Schottky diode D1, shown in the Typical Application on the back page, conducts during the dead-time , The LTC®4008 is a constant-current/constant-voltage charger controller. The PWM controller uses a , Current Limiting and Faults Charging Current Monitor Output Available in a 20-Pin Narrow SSOP Package , Q1: Si4431BDY Q2: FDC645N CHARGING CURRENT MONITOR 4008 TA01 4008fa 1 LTC4008 U Linear Technology
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NTC-8 series capacitor LT 4008 ic 4008 bd 2003 fast charge battery LTC4100
Abstract: Faults Charging Current Monitor Output Available in a 20-Pin Narrow SSOP Package The LTC®4008 is a , external resistor and capacitor in order to function properly. LTC4008 CLK 4008 F02 Figure 2. VPROG , may achieve cost savings or efficiency gains. U The Schottky diode D1, shown in the Typical , : Si4431DY Q2: FDC6459 4008 TA01 NOTE: * 0.25% TOLERANCE ALL OTHER RESISTORS ARE 1% TOLERANCE U 4008f , Leakage Current UVLO Undervoltage Lockout Threshold Shutdown Threshold at ACP/SHDN Operating Current in Linear Technology
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337 6K tantalum MBRS130T3 4431ADY
Abstract: '" VOUT)/VIN. The Schottky diode D1, shown in the Typical Application on the back page, conducts , Present, Input Current Limiting and Faults Charging Current Monitor Output Available in a 20-Pin Narrow , Systems The LTC®4008 is a constant-current/constant-voltage charger controller. The PWM controller , CHARGING CURRENT MONITOR 4008 TA01 4008fb 1 LTC4008 ABSOLUTE MAXIMUM RATINGS (Note 1 , Operating Current in Shutdown , VSHDN = 0V, Sum of Current from CLP CLN, DCIN mA Current Sense Linear Technology
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thermistor ntc 45k
Abstract: Hermetically Sealed Package â Voltage Regulator Diode Released to BS 9305-F078 (3 - 200 Volts) â Voltage , CHARACTERISTICS â  A range of medium power zener and avalanche diodes to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar configurations. â  Forward Voltage Vf l. lv , IN4628 Thru IN4677 IN4158 Thru IN4193 AVAILABLE IN THE FOLLOWING CONFIGURATIONS - ( à ) - (.35") 9.14 3.81 max dia ( 15") -(1 ") 25.4 min © % Case Outline DIM in mm D029 (inches -
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z0b07 Z4618 z4843 C/10- IN1875 IN1888 IN4323 IN4358 IN3016
Abstract: bottom MOSFET on time. This activity is diagrammed in Figure 1. 4008 F01 Figure 1 ­V + 11.67uA , Cycle = (VIN ­ VOUT)/VIN. The Schottky diode D1, shown in the Typical Application on the back page , Output Available in a 20-Pin Narrow SSOP Package U APPLICATIO S s s Notebook Computers , The LTC®4008 is a constant-current/constant-voltage charger controller. The PWM controller uses a , CHARGING CURRENT MONITOR 4008 TA01 4008i Information furnished by Linear Technology Corporation Linear Technology
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PTC 1k thermistor conversion table data sheet ic 4008 marcon capacitor nc p-MOSFET "soft start" PTC 3k thermistor conversion table Battery charger 48 volt circuit diagram
Abstract: bottom MOSFET on time. This activity is diagrammed in Figure 1. 4008 F01 Figure 1 ­V + 11.67uA , Cycle = (VIN ­ VOUT)/VIN. The Schottky diode D1, shown in the Typical Application on the back page , Output Available in a 20-Pin Narrow SSOP Package U APPLICATIO S s s Notebook Computers , The LTC®4008 is a constant-current/constant-voltage charger controller. The PWM controller uses a , CHARGING CURRENT MONITOR 4008 TA01 4008i Information furnished by Linear Technology Corporation Linear Technology
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614k thermistor 10k tapered amplifier diode
Abstract: accordingly. The device structure is shown in figure 1. Device structure 6 black lines Z Optical , 25.748 mm (V) 9 um x 9um 4008 (H) x 2672 (V) 4056 (H) x 2684 (V) Left: 20 Right: 20 Left: 4 Right , lines 20 4 W 24 Output amplifier 4 20 4008 active pixels 6 black lines 4056 cells , Architecture of the FTF4027M The optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are located below and above the DALSA Professional Imaging
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tp 4056 datasheet cmos 4008 diode a4W tp 4056 FTF4027 CCD IMAGE 4008H FTF4027M/HG FTF4027M/IG FTF4027M/EG FTF4027M/TG
Abstract: shown in figure 1. Device structure Optical size: Chip size: Pixel size: Active pixels: Total no. of , 24.048 mm (V) 38.452 mm (H) x 25.748 mm (V) 9 um x 9um 4008 (H) x 2672 (V) 4056 (H) x 2684 (V) Left: 20 , GBGB RGRG GBGB Y Image Area 20 4 GBGB RGRG 4008 active pixels 2672 active lines 4 20 GBGB , optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are located below and above the image section for readout. After DALSA Professional Imaging
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FTF4052C a1w 60 transistor cmos ic 4056 FTF4027C FTF4027C/HG FTF4027C/IG FTF4027C/EG FTF4027C/TG
Abstract: accordingly. The device structure is shown in figure 1. Device structure Optical size: Chip size: Pixel , : Optical black lines: 36.072 mm (H) x 24.048 mm (V) 38.452 mm (H) x 25.748 mm (V) 9 um x 9um 4008 (H) x , Z 6 black lines Y Image Area 20 4 4008 active pixels 2672 active lines 4 20 2684 , centres of all pixels in the image section form a square grid. The charge is generated and integrated in , transport, the C3 gates separate the pixels in the register. The central C3 gates of the lower and upper DALSA Professional Imaging
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ccd image area sensor 120 frame rate
Abstract: using multiple outputs, the frame rate increases accordingly. The device structure is shown in figure 1 , (H) x 48.096 mm (V) 38.452 mm (H) x 49.796 mm (V) 9 9m x 9 9m 4008 (H) x 5344 (V) 4056 (H) x 5356 , Area 20 4 W 4008 active pixels G B G B R G R G 24 Output amplifier 4 20 G B G B R , Full-Frame CCD Image Sensor FTF4052C Architecture of the FTF4052C The optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output DALSA Professional Imaging
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A1W TRANSISTOR BAS28 BAT74 BG40 FTF4052 FTF4052C/HG FTF4052C/IG FTF4052C/EG FTF4052C/TG
Abstract: structure is shown in figure 1. Device structure Z Optical size: Chip size: Pixel size: Active , ) 38.452 mm (H) x 25.748 mm (V) 9 um x 9um 4008 (H) x 2672 (V) 4056 (H) x 2684 (V) Left: 20 Right: 20 , 4008 active pixels 4056 cells Output register X 24 4104 cells Figure 1 - Device Structure , Image Sensor FTF4027C Architecture of the FTF4027C The optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are DALSA Professional Imaging
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Melles Griot amplifier ccd color Linear Image Sensor image Sensor 28 pin Melles Griot CG1 HOYA ccd sensor 3840
Abstract: , the frame rate increases accordingly. The device structure is shown in figure 1. 2 Description , (V) 38.452 mm (H) x 49.796 mm (V) 9 um x 9 um 4008 (H) x 5344 (V) 4056 (H) x 5356 (V) Left: 20 Right , G 4008 active pixels 4 20 G B G B R G R G 6 black lines W X 24 24 Output amplifier , the FTF4052C The optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are located below and above the image section for DALSA Professional Imaging
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Abstract: Hermetically Sealed Metal Package Voltage Regulator Diode Released to BS/CECC 9305-F082 Voltage Range 3.0 to , and avalanche diodes available to BS 9305-F-082 in a hermetically sealed D01 package with both , marked with Type No. and logo Weight: 1.9 grammes (approximately) AVAILABLE IN THE FOLLOWING , 40.075 4008 40.08 40.08 +0.085 +0.09 +0.09 +0.095 40.095 40.10 40.10 40.10 +0.105 40.105 +0.105 40.105 , IN l O - » 4 - ~ i A C PIN 3 < > - + * - I ^ Ì n Negative CT u& S u ffix A Doubler S u ffix -
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IN1765 BZY95C12 in152 BZY95-C12 BZY95-C51 BZY96C6V2 BZY95C22 BZY9S/BZY96/Z2 IN1507 IN1517 BS9300C405 IN1518 IN1528
Abstract: accordingly. The device structure is shown in figure 1. · RoHS compliant 6 black lines Z Y , active lines 36.072 mm (H) x 48.096 mm (V) 38.452 mm (H) x 49.796 mm (V) 9 um x 9 um 4008 (H) x , T op: 6 Image Area 20 4 4008 active pixels W 24 Output amplifier 4 20 6 black , Sensor FTF4052M Architecture of the FTF4052M The optical centers of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are DALSA Professional Imaging
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ccd image sensor image sensor sample hold pnp transistor 9015 FTF4052M/HG FTF4052M/IG FTF4052M/EG FTF4052M/TG
Abstract: © 4-00.8- Operating Force 1 (.039) 2.54 . (.100) 1 (.039) TYP. 01(0.039) TYP. (2) ANODE -© COLLECTOR >(3) EMITTER CATHODE NOTES: 1. All dimensions are in millimeters (inches). 2. Tolerance is , =25°C PARAMETER MAXIMUM RATING UNIT IR Diode Continuous Forward Current 50 mA IR Diode Reverse Voltage 5 V Transistor Collector Currant 20 mA Transistor Power Dissipation 100 mW IR Diode Peak Forward Current (Pulse Wide = 10 ÃS, 300 pps) 1 A Diode Power Dissipation 75 mW Phototransistor Collector-Emitter Voltage -
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LTH-306-21 30621 6c2 diode IR DIODE BNS-OD-C131/A4 1X106
Abstract: accordingly. The device structure is shown in figure 1. · RoHS compliant 6 black lines Z Y , active lines 36.072 mm (H) x 48.096 mm (V) 38.452 mm (H) x 49.796 mm (V) 9 9m x 9 9m 4008 (H) x , T op: 6 Image Area 20 4 4008 active pixels W 24 Output amplifier 4056 cells , Sensor FTF4052M Architecture of the FTF4052M The optical centers of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are DALSA Professional Imaging
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03FCG261 transistor a4y A1W diode transistor a4z
Abstract: heatsink Maximum mounting torque = 20 in. lb. LM LO LS Weight: 0.6 Ounces (17 Grams , 4008 800 SDB 4010 1000 Maximum DC Blocking Voltage VRM Maximum RMS Voltage VRMS 35 , Forward Voltage (Per Diode) at 20 Amps DC Maximum Average DC Reverse Current At Rated DC Blocking , FORWARD CHARACTERISTIC PER DIODE E48 20 40 60 80 100 120 140 Percent of Rated Diotec
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BSDB-4000-1B E124962 BSDB-4000-2B SDB4000-4010 SDB4000-SDB4006 SDB4008-SDB4010
Abstract: Position: Any. Bolt down on heatsink Maximum mounting torque = 20 in. lb. Weight: 0.6 Ounces (17 Grams , 60Hz Half-Sine Wave O Superimposed on Rated Load (JEDEC Method). TJ = 175 C Forward Voltage (Per Diode , 4004 400 280 400 40 500 0.96 0.93 2 20 2500 1.1 -55 to +175 1.00 0.97 SDB 4006 600 420 600 SDB 4008 800 , FORWARD CHARACTERISTIC PER DIODE Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE Diotec
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SDB 4004 diode
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