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Part Manufacturer Description Datasheet BUY
BQ24008PWPG4 Texas Instruments Linear 1-cell Li-Ion Battery Charger W/Integrated FET, Bi-Color LED 20-HTSSOP -20 to 70 visit Texas Instruments
BQ24008PWP Texas Instruments Linear 1-cell Li-Ion Battery Charger W/Integrated FET, Bi-Color LED 20-HTSSOP -20 to 70 visit Texas Instruments Buy
BQ24008PWPR Texas Instruments Linear 1-cell Li-Ion Battery Charger W/Integrated FET, Bi-Color LED 20-HTSSOP -20 to 70 visit Texas Instruments
BQ24008PWPRG4 Texas Instruments 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20, GREEN, PLASTIC, HTSSOP-20 visit Texas Instruments
HA1-2400/883 Intersil Corporation OP-AMP, 9000uV OFFSET-MAX, 20MHz BAND WIDTH, CDIP16, CERAMIC, DIP-16 visit Intersil
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments

in 4008 diode

Catalog Datasheet MFG & Type PDF Document Tags

in 4008 diode

Abstract: IN4007 diode detail theory information rectified sinusoid vg. The energy Eg is stored in the primary winding. The rectifying diode D1 is reverse , in Q1 ramps up linearly at a rate of: dig (t ) dt MK-4008-B 11/20/07 = vg (t ) LM , operates in this mode. MK-4008-B 11/20/07 Page iW1692 Low-Power Off-line Digital PWM , should be. Included in the snubber network is also a resistor (R6) in series with the diode (D6). D6 , response that is much faster than traditional solutions, resulting in improved dynamic load response. The
iWatt
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LT 4008

Abstract: NTC-8 series capacitor . This activity is diagrammed in Figure 1. 4008 F01 Figure 1 VREF V ­ V + 11.67µA · 3.01k = , Schottky diode D1, shown in the Typical Application on the back page, conducts during the dead-time , The LTC®4008 is a constant-current/constant-voltage charger controller. The PWM controller uses a , Current Limiting and Faults Charging Current Monitor Output Available in a 20-Pin Narrow SSOP Package , Q1: Si4431BDY Q2: FDC645N CHARGING CURRENT MONITOR 4008 TA01 4008fa 1 LTC4008 U
Linear Technology
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LT 4008 NTC-8 series capacitor Intel 4008 NTC 150k in 4008 diode bd 2003 fast charge battery LT1769 LTC1778 LTC1960 LTC3711 LTC4006 LTC4007

Si4431B

Abstract: in 4008 diode )/VIN. The Schottky diode D1, shown in the Typical Application on the back page, conducts during the , LTC®4008 is a constant-current/constant-voltage charger controller. The PWM controller uses a , , Input Current Limiting and Faults Charging Current Monitor Output Available in a 20-Pin Narrow SSOP , CHARGING CURRENT MONITOR 4008 TA01 4008fb 1 LTC4008 ABSOLUTE MAXIMUM RATINGS (Note 1 , UVLO Undervoltage Lockout Threshold Shutdown Threshold at ACP/SHDN Operating Current in Shutdown
Linear Technology
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Si4431B LTC4008-1 LTC4008EGN NTC 8 multiple pcb layout c4008 LTC4100

Intel 4008

Abstract: LTC4008-1 Faults Charging Current Monitor Output Available in a 20-Pin Narrow SSOP Package The LTC®4008 is a , external resistor and capacitor in order to function properly. LTC4008 CLK 4008 F02 Figure 2. VPROG , may achieve cost savings or efficiency gains. U The Schottky diode D1, shown in the Typical , : Si4431DY Q2: FDC6459 4008 TA01 NOTE: * 0.25% TOLERANCE ALL OTHER RESISTORS ARE 1% TOLERANCE U 4008f , Leakage Current UVLO Undervoltage Lockout Threshold Shutdown Threshold at ACP/SHDN Operating Current in
Linear Technology
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337 6K tantalum MBRS130T3 4431ADY

thermistor ntc 45k

Abstract: '" VOUT)/VIN. The Schottky diode D1, shown in the Typical Application on the back page, conducts , Present, Input Current Limiting and Faults Charging Current Monitor Output Available in a 20-Pin Narrow , Systems The LTC®4008 is a constant-current/constant-voltage charger controller. The PWM controller , CHARGING CURRENT MONITOR 4008 TA01 4008fb 1 LTC4008 ABSOLUTE MAXIMUM RATINGS (Note 1 , Operating Current in Shutdown , VSHDN = 0V, Sum of Current from CLP CLN, DCIN mA Current Sense
Linear Technology
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thermistor ntc 45k

z4843

Abstract: Z4618 Hermetically Sealed Package â Voltage Regulator Diode Released to BS 9305-F078 (3 - 200 Volts) â Voltage , CHARACTERISTICS â  A range of medium power zener and avalanche diodes to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar configurations. â  Forward Voltage Vf l. lv , IN4628 Thru IN4677 IN4158 Thru IN4193 AVAILABLE IN THE FOLLOWING CONFIGURATIONS - ( à ) - (.35") 9.14 3.81 max dia ( 15") -(1 ") 25.4 min © % Case Outline DIM in mm D029 (inches
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z4843 Z4618 z0b07 C/10- IN1875 IN1888 IN4323 IN4358 IN3016

PTC 1k thermistor conversion table

Abstract: data sheet ic 4008 bottom MOSFET on time. This activity is diagrammed in Figure 1. 4008 F01 Figure 1 ­V + 11.67µA , Cycle = (VIN ­ VOUT)/VIN. The Schottky diode D1, shown in the Typical Application on the back page , Output Available in a 20-Pin Narrow SSOP Package U APPLICATIO S s s Notebook Computers , The LTC®4008 is a constant-current/constant-voltage charger controller. The PWM controller uses a , CHARGING CURRENT MONITOR 4008 TA01 4008i Information furnished by Linear Technology Corporation
Linear Technology
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PTC 1k thermistor conversion table data sheet ic 4008 marcon capacitor nc p-MOSFET "soft start" 12v dc to dc mobile charger circuit Battery charger 48 volt circuit diagram

FDC6459

Abstract: 614k bottom MOSFET on time. This activity is diagrammed in Figure 1. 4008 F01 Figure 1 ­V + 11.67µA , Cycle = (VIN ­ VOUT)/VIN. The Schottky diode D1, shown in the Typical Application on the back page , Output Available in a 20-Pin Narrow SSOP Package U APPLICATIO S s s Notebook Computers , The LTC®4008 is a constant-current/constant-voltage charger controller. The PWM controller uses a , CHARGING CURRENT MONITOR 4008 TA01 4008i Information furnished by Linear Technology Corporation
Linear Technology
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614k tapered amplifier diode thermistor 10k PTC 3k thermistor conversion table

tp 4056 datasheet

Abstract: FTF4027M accordingly. The device structure is shown in figure 1. Device structure 6 black lines Z Optical , 25.748 mm (V) 9 µm x 9µm 4008 (H) x 2672 (V) 4056 (H) x 2684 (V) Left: 20 Right: 20 Left: 4 Right , lines 20 4 W 24 Output amplifier 4 20 4008 active pixels 6 black lines 4056 cells , Architecture of the FTF4027M The optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are located below and above the
DALSA Professional Imaging
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tp 4056 datasheet cmos 4008 diode a4W tp 4056 CCD IMAGE FTF4027 4008H FTF4027M/HG FTF4027M/IG FTF4027M/EG FTF4027M/TG

a1w 60 transistor

Abstract: cmos ic 4056 shown in figure 1. Device structure Optical size: Chip size: Pixel size: Active pixels: Total no. of , 24.048 mm (V) 38.452 mm (H) x 25.748 mm (V) 9 µm x 9µm 4008 (H) x 2672 (V) 4056 (H) x 2684 (V) Left: 20 , GBGB RGRG GBGB Y Image Area 20 4 GBGB RGRG 4008 active pixels 2672 active lines 4 20 GBGB , optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are located below and above the image section for readout. After
DALSA Professional Imaging
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FTF4052C a1w 60 transistor cmos ic 4056 FTF4027C FTF4027C/HG FTF4027C/IG FTF4027C/EG FTF4027C/TG

FTF4027M

Abstract: ccd image area sensor 120 frame rate accordingly. The device structure is shown in figure 1. Device structure Optical size: Chip size: Pixel , : Optical black lines: 36.072 mm (H) x 24.048 mm (V) 38.452 mm (H) x 25.748 mm (V) 9 µm x 9µm 4008 (H) x , Z 6 black lines Y Image Area 20 4 4008 active pixels 2672 active lines 4 20 2684 , centres of all pixels in the image section form a square grid. The charge is generated and integrated in , transport, the C3 gates separate the pixels in the register. The central C3 gates of the lower and upper
DALSA Professional Imaging
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ccd image area sensor 120 frame rate

tp 4056

Abstract: FTF4052C using multiple outputs, the frame rate increases accordingly. The device structure is shown in figure 1 , (H) x 48.096 mm (V) 38.452 mm (H) x 49.796 mm (V) 9 9m x 9 9m 4008 (H) x 5344 (V) 4056 (H) x 5356 , Area 20 4 W 4008 active pixels G B G B R G R G 24 Output amplifier 4 20 G B G B R , Full-Frame CCD Image Sensor FTF4052C Architecture of the FTF4052C The optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output
DALSA Professional Imaging
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FTF4052 A1W TRANSISTOR BAS28 BAT74 BG40 FTF4052C/HG FTF4052C/IG FTF4052C/EG FTF4052C/TG

FTF4052

Abstract: tp 4056 datasheet structure is shown in figure 1. Device structure Z Optical size: Chip size: Pixel size: Active , ) 38.452 mm (H) x 25.748 mm (V) 9 µm x 9µm 4008 (H) x 2672 (V) 4056 (H) x 2684 (V) Left: 20 Right: 20 , 4008 active pixels 4056 cells Output register X 24 4104 cells Figure 1 - Device Structure , Image Sensor FTF4027C Architecture of the FTF4027C The optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are
DALSA Professional Imaging
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Melles Griot amplifier ccd color Linear Image Sensor transistor a4y 36X24 CG1 HOYA a4w 41

FTF4052C

Abstract: FTF4052 , the frame rate increases accordingly. The device structure is shown in figure 1. 2 Description , (V) 38.452 mm (H) x 49.796 mm (V) 9 µm x 9 µm 4008 (H) x 5344 (V) 4056 (H) x 5356 (V) Left: 20 Right , G 4008 active pixels 4 20 G B G B R G R G 6 black lines W X 24 24 Output amplifier , the FTF4052C The optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are located below and above the image section for
DALSA Professional Imaging
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BZY95C12

Abstract: in152 Hermetically Sealed Metal Package Voltage Regulator Diode Released to BS/CECC 9305-F082 Voltage Range 3.0 to , and avalanche diodes available to BS 9305-F-082 in a hermetically sealed D01 package with both , marked with Type No. and logo Weight: 1.9 grammes (approximately) AVAILABLE IN THE FOLLOWING , 40.075 4008 40.08 40.08 +0.085 +0.09 +0.09 +0.095 40.095 40.10 40.10 40.10 +0.105 40.105 +0.105 40.105 , IN l O - » 4 - ~ i A C PIN 3 < > - + * - I ^ Ì n Negative CT u& S u ffix A Doubler S u ffix
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IN1765 BZY95C12 in152 BZY95-C12 BZY95-C51 BZY96C5V1 BZY96C6V2 BZY9S/BZY96/Z2 IN1507 IN1517 BS9300C405 IN1518 IN1528

FTF4052M

Abstract: FTF4052 accordingly. The device structure is shown in figure 1. · RoHS compliant 6 black lines Z Y , active lines 36.072 mm (H) x 48.096 mm (V) 38.452 mm (H) x 49.796 mm (V) 9 µm x 9 µm 4008 (H) x , T op: 6 Image Area 20 4 4008 active pixels W 24 Output amplifier 4 20 6 black , Sensor FTF4052M Architecture of the FTF4052M The optical centers of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are
DALSA Professional Imaging
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ccd image sensor image sensor sample hold Melles Griot pnp transistor 9015 FTF4052M/HG FTF4052M/IG FTF4052M/EG FTF4052M/TG

in 4008 diode

Abstract: DIODE 4008 © 4-00.8- Operating Force 1 (.039) 2.54 . (.100) 1 (.039) TYP. 01(0.039) TYP. (2) ANODE -© COLLECTOR >(3) EMITTER CATHODE NOTES: 1. All dimensions are in millimeters (inches). 2. Tolerance is , =25°C PARAMETER MAXIMUM RATING UNIT IR Diode Continuous Forward Current 50 mA IR Diode Reverse Voltage 5 V Transistor Collector Currant 20 mA Transistor Power Dissipation 100 mW IR Diode Peak Forward Current (Pulse Wide = 10 ÃS, 300 pps) 1 A Diode Power Dissipation 75 mW Phototransistor Collector-Emitter Voltage
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LTH-306-21 DIODE 4008 30621 6c2 diode IR DIODE BNS-OD-C131/A4 1X106

FTF4052M

Abstract: FTF4052 accordingly. The device structure is shown in figure 1. · RoHS compliant 6 black lines Z Y , active lines 36.072 mm (H) x 48.096 mm (V) 38.452 mm (H) x 49.796 mm (V) 9 9m x 9 9m 4008 (H) x , T op: 6 Image Area 20 4 4008 active pixels W 24 Output amplifier 4056 cells , Sensor FTF4052M Architecture of the FTF4052M The optical centers of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are
DALSA Professional Imaging
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03FCG261 transistor a4z A1W diode
Abstract: heatsink Maximum mounting torque = 20 in. lb. LM LO LS Weight: 0.6 Ounces (17 Grams , 4008 800 SDB 4010 1000 Maximum DC Blocking Voltage VRM Maximum RMS Voltage VRMS 35 , Forward Voltage (Per Diode) at 20 Amps DC Maximum Average DC Reverse Current At Rated DC Blocking , FORWARD CHARACTERISTIC PER DIODE E48 20 40 60 80 100 120 140 Percent of Rated Diotec
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BSDB-4000-1B E124962 BSDB-4000-2B SDB4000-4010 SDB4000-SDB4006 SDB4008-SDB4010

SDB 4004 diode

Abstract: Position: Any. Bolt down on heatsink Maximum mounting torque = 20 in. lb. Weight: 0.6 Ounces (17 Grams , 60Hz Half-Sine Wave O Superimposed on Rated Load (JEDEC Method). TJ = 175 C Forward Voltage (Per Diode , 4004 400 280 400 40 500 0.96 0.93 2 20 2500 1.1 -55 to +175 1.00 0.97 SDB 4006 600 420 600 SDB 4008 800 , FORWARD CHARACTERISTIC PER DIODE Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE
Diotec
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SDB 4004 diode
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