NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: rectified sinusoid vg. The energy Eg is stored in the primary winding. The rectifying diode D1 is reverse , in Q1 ramps up linearly at a rate of: dig (t ) dt MK-4008-B 11/20/07 = vg (t ) LM , operates in this mode. MK-4008-B 11/20/07 Page iW1692 Low-Power Off-line Digital PWM , should be. Included in the snubber network is also a resistor (R6) in series with the diode (D6). D6 , response that is much faster than traditional solutions, resulting in improved dynamic load response. The ... | Original |
18 pages, |
ILG-005 IN4007 ic 4008 FR102 IN4007 diode forward bias resistance IN4007 diode forward reverse bias iw1692 JESD22-A114 DIODE IN4007 in4007 application circuit DIODE 4008 MK-4008-B mk4008 datasheet abstract |
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| Abstract: 1T364 1T364 Silicon Variable Capacitance Diode For the availability of this product, please contact the sales office. Description The 1T364 1T364 is a variable capacitance diode designed for the tuning of wide , Structure Silicon epitaxial planar type diode Absolute Maximum Ratings (Ta-25 °C) • Reverse voltage Vr 30 , 10 nA Diode capacitance C2 Vr=2 V, f=1 MHz 28.0 31.25 34.0 pF C25 Vr-25 V, f=1 MHz 2.30 2.50 2.65 , a Capacitance deviation in a matching group AC Vr=2 to 25 V, f=1 MHz 3 % Sony reserves the right ... | OCR Scan |
5 pages, |
DIODE 809 marking 1T364 in 4008 diode "DIODE" 4008 DIODE 4008 C2/C25 1T364 abstract |
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| Abstract: bottom MOSFET on time. This activity is diagrammed in Figure 1. 4008 F01 Figure 1 VREF V � V + , Schottky diode D1, shown in the Typical Application on the back page, conducts during the dead-time , Current Limiting and Faults Charging Current Monitor Output Available in a 20-Pin Narrow SSOP Package , Q1: Si4431BDY Si4431BDY Q2: FDC645N FDC645N CHARGING CURRENT MONITOR 4008 TA01 4008fa 1 LTC4008 LTC4008 U , Threshold at ACP/SHDN Operating Current in Shutdown VSHDN = 0V, Sum of Current from CLP, CLN, DCIN ... | Original |
24 pages, |
Si4431BDY NTC 8 LTC4008EGN LTC4008-1 FDC645N NTC 150k LTC4008 LT 4008 NTC-8 series capacitor LTC4008 abstract |
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| Abstract: Cycle = (VIN � VOUT)/VIN. The Schottky diode D1, shown in the Typical Application on the back page , Faults Charging Current Monitor Output Available in a 20-Pin Narrow SSOP Package APPLICATIONS n n , MONITOR 4008 TA01 4008fb 1 LTC4008 LTC4008 ABSOLUTE MAXIMUM RATINGS (Note 1) Voltage from DCIN, CLP , Undervoltage Lockout Threshold Shutdown Threshold at ACP/SHDN Operating Current in Shutdown , VSHDN = 0V , Regulator Switching Frequency fMIN Regulator Switching Frequency in Drop Out DCMAX Regulator ... | Original |
24 pages, |
thermistor ntc 60 0250 Si4431BDY PTC 1k thermistor conversion table FDC645N LTC4008 Intel 4008 LTC4008EGN LTC4008 abstract |
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| Abstract: © 4-00.8- Operating Force 1 (.039) 2.54 . (.100) 1 (.039) TYP. 01(0.039) TYP. (2) ANODE -© COLLECTOR >(3) EMITTER CATHODE NOTES: 1. All dimensions are in millimeters (inches). 2. Tolerance is +0.25mm , MAXIMUM RATING UNIT IR Diode Continuous Forward Current 50 mA IR Diode Reverse Voltage 5 V Transistor Collector Currant 20 mA Transistor Power Dissipation 100 mW IR Diode Peak Forward Current (Pulse Wide = 10 ßS, 300 pps) 1 A Diode Power Dissipation 75 mW Phototransistor Collector-Emitter Voltage 30 V ... | OCR Scan |
5 pages, |
LTH-306-21 DIODE 4008 6c2 diode datasheet abstract |
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| Abstract: accordingly. The device structure is shown in figure 1. Device structure 6 black lines Z Optical , 25.748 mm (V) 9 um x 9um 4008 (H) x 2672 (V) 4056 (H) x 2684 (V) Left: 20 Right: 20 Left: 4 Right , lines 20 4 W 24 Output amplifier 4 20 4008 active pixels 6 black lines 4056 cells , Architecture of the FTF4027M FTF4027M The optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are located below and above the ... | Original |
18 pages, |
a4w 41 BAS28 BAT74 BG40 black 6 pin chip ccd image sensor CCD linear 2400 CCD Linear Image Sensor DIODE 4008 medical sensor Melles Griot CCD IMAGE tp 4056 diode a4W FTF4027M FTF4027M abstract |
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| Abstract: using multiple outputs, the frame rate increases accordingly. The device structure is shown in figure , 36.072 mm (H) x 48.096 mm (V) 38.452 mm (H) x 49.796 mm (V) 9 9m x 9 9m 4008 (H) x 5344 (V) 4056 (H , Image Area 20 4 W 4008 active pixels G B G B R G R G 24 Output amplifier 4 20 G B G , all pixels in the image section form a square grid. The charge is generated and integrated in this , gates separate the pixels in the register. The central C3 gates of the lower and upper registers are ... | Original |
18 pages, |
BG40 BAT74 BAS28 cmos 4008 FTF4052C tp 4056 FTF4052C abstract |
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| Abstract: structure is shown in figure 1. Device structure Z Optical size: Chip size: Pixel size: Active , ) 38.452 mm (H) x 25.748 mm (V) 9 um x 9um 4008 (H) x 2672 (V) 4056 (H) x 2684 (V) Left: 20 Right: 20 , 4008 active pixels 4056 cells Output register X 24 4104 cells Figure 1 - Device Structure , Image Sensor FTF4027C FTF4027C Architecture of the FTF4027C FTF4027C The optical centres of all pixels in the image section form a square grid. The charge is generated and integrated in this section. Output registers are ... | Original |
18 pages, |
a4w 41 black 6 pin chip ccd image sensor image Sensor 28 pin Melles Griot MOS 4056 CG1 HOYA BAS28 BAT74 BG40 FTF4027C FTF4027 ccd color Linear Image Sensor CCD IMAGE FTF4027C abstract |
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| Abstract: This activity is diagrammed in Figure 1. 4008 F01 Figure 1 ç'™ + 11.67礎 � 3k VREF V = CSP , : Synchronous Switch Duty Cycle = (VIN � VOUT)/VIN. The Schottky diode D1, shown in the Typical Application , Output Available in a 20-Pin Narrow SSOP Package U APPLICATIO S s s Notebook Computers , CHARGING CURRENT MONITOR 4008 TA01 4008i Information furnished by Linear Technology Corporation , Current in Shutdown VSHDN = 0V, Sum of Current from CLP, CLN, DCIN mA 4008i 2 LTC4008 LTC4008 ... | Original |
20 pages, |
LTC4008EGN thermistor 10k Si4431DY PTC 1k thermistor conversion table bd 2003 fast charge battery in 4008 diode LTC4008 thermistor ntc 45k FDC6459 NTC 150k 614k LTC4008 abstract |
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| Abstract: This activity is diagrammed in Figure 1. 4008 F01 Figure 1 ç'™ + 11.67礎 � 3k VREF V = CSP , : Synchronous Switch Duty Cycle = (VIN � VOUT)/VIN. The Schottky diode D1, shown in the Typical Application , Output Available in a 20-Pin Narrow SSOP Package U APPLICATIO S s s Notebook Computers , CHARGING CURRENT MONITOR 4008 TA01 4008i Information furnished by Linear Technology Corporation , Current in Shutdown VSHDN = 0V, Sum of Current from CLP, CLN, DCIN mA 4008i 2 LTC4008 LTC4008 ... | Original |
20 pages, |
36V Li-Ion battery charge controller 30v P-mosfet 12v ac to dc mobile charger circuit 10K thermistor 107 6K tantalum capacitors LTC4008 LTC4008EGN thermistor NTC 4,7 simple 12v to 19v converter Si4431DY NTC 4,7 mobile battery charging automatic off LTC4008 abstract |
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| 4004, EL4008 and EL4104 EL4104 EL4104 EL4104 analog output terminals generate signals in the range between 0 and 10 V. The potential. The EL4004 EL4004 EL4004 EL4004 and EL4104 EL4104 EL4104 EL4104 versions have four channels. The EL4008 combines eight channels in one  Beckhoff EtherCAT - EL4004 EL4004 EL4004 EL4004, EL4008, EL4104 EL4104 EL4104 EL4104 | 4-, 8-channel analog output terminals 0...10 V, 12/16 bits Analog Output EL4x04, EL4008 Contact assembly Connection EL4004 EL4004 EL4004 EL4004, ES4004 ES4004 ES4004 ES4004 EL4008, ES4008 EL4104 EL4104 EL4104 EL4104, ES4104 ES4104 ES4104 ES4104 www.datasheetarchive.com/files/beckhoff/catalog/english/ethercat/el4004_el4008_el4104.htm |
Beckhoff | 10/11/2009 | 20.19 Kb | HTM | el4004_el4008_el4104.htm |
| * * * *BAS40L BAS40L BAS40L BAS40L * *NXP Semiconductors * *General-purpose Schottky diodes * * * * *IFSM = 200mA @ tp = 10ms *VF = 380mV @ IF = 1mA * * * * * * * * * *Package: SOD882 * *Package Pin 1: Cathode *Package Pin 2: Anode * * * * *Simulator modeling in the reverse * mode of operation. * R1 1 2 8E+08 D1 1 2 BAS40L BAS40L BAS40L BAS40L * .MODEL BAS40L BAS40L BAS40L BAS40L D + IS .3192 + M = 0.4008 + FC = 0.5 + EG = 0.69 + XTI = 2 .ENDS * www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BAS40L.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| * * * *RB751CS40 RB751CS40 RB751CS40 RB751CS40 * *NXP Semiconductors * *Schottky barrier single diodes * * * * *IFSM = 200mA @ tp = 10ms *VF = 370mV @ IF = 1mA * * * * * * * * * *Package: SOD882 * *Package Pin 1: Cathode *Package Pin 2: Anode * * * * *Simulator modeling in the reverse * mode of operation. * R1 1 2 8E+08 D1 1 2 RB751CS40 RB751CS40 RB751CS40 RB751CS40 * .MODEL RB751CS40 RB751CS40 RB751CS40 RB751CS40 D = 0.3192 + M = 0.4008 + FC = 0.5 + EG = 0.69 + XTI = 2 .ENDS * www.datasheetarchive.com/download/31383580-596958ZC/30908.zip (RB751CS40.prm) |
NXP | 23/10/2012 | 63.26 Kb | ZIP | 30908.zip |
| * * * *BAS40L BAS40L BAS40L BAS40L * *NXP Semiconductors * *General-purpose Schottky diodes * * * * *IFSM = 200mA @ tp = 10ms *VF = 380mV @ IF = 1mA * * * * * * * * * *Package: SOD882 * *Package Pin 1: Cathode *Package Pin 2: Anode * * * * *Simulator modeling in the reverse * mode of operation. * R1 1 2 8E+08 D1 1 2 BAS40L BAS40L BAS40L BAS40L * .MODEL BAS40L BAS40L BAS40L BAS40L D + IS .3192 + M = 0.4008 + FC = 0.5 + EG = 0.69 + XTI = 2 .ENDS * www.datasheetarchive.com/download/31383580-596958ZC/30908.zip (BAS40L.prm) |
NXP | 23/10/2012 | 63.26 Kb | ZIP | 30908.zip |
| * * * *BAS40-05V BAS40-05V BAS40-05V BAS40-05V * *NXP Semiconductors * *General-purpose Schottky diodes * * * * *IFSM = 200mA @ tp = 10ms *VF = 380mV @ IF = 1mA * * * * * * * * * *Package: SOT666 * *Package Pin 1: Anode D1 *Package Pin 2: Anode D2 *Package Pin 3 * improves modeling in the reverse * mode of operation. * R1 1 2 8E+08 D1 1 2 BAS40-05V BAS40-05V BAS40-05V BAS40-05V * .MODEL BAS40 BAS40 BAS40 BAS40 -12 + VJ = 0.3192 + M = 0.4008 + FC = 0.5 + TT = 0 + EG = 0.69 + XTI = 2 .ENDS * www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BAS40_05V.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| * * * *1PS75SB45 1PS75SB45 1PS75SB45 1PS75SB45 * *NXP Semiconductors *General-purpose Schottky diodes * * * * *IFSM = 200mA @ tp > 10ms *VF = 380mV @ IF = 1mA * * * * * * * * * *Package: SOT323 * *Package Pin 1 : Anode D1 *Package Pin 2 : Anode D2 modeling in the reverse * mode of operation. * R1 1 2 8E+08 D1 1 2 1PS75SB45 1PS75SB45 1PS75SB45 1PS75SB45 * .MODEL 1PS75SB45 1PS75SB45 1PS75SB45 1PS75SB45 D = 0.3192 + M = 0.4008 + FC = 0.5 + TT = 0 + EG = 0.69 + XTI = 2) .ENDS * www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (1PS75SB45.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| * * * *BAS40-05V BAS40-05V BAS40-05V BAS40-05V * *NXP Semiconductors * *General-purpose Schottky diodes * * * * *IFSM = 200mA @ tp = 10ms *VF = 380mV @ IF = 1mA * * * * * * * * * *Package: SOT666 * *Package Pin 1: Anode D1 *Package Pin 2: Anode D2 *Package Pin 3 * improves modeling in the reverse * mode of operation. * R1 1 2 8E+08 D1 1 2 BAS40-05V BAS40-05V BAS40-05V BAS40-05V * .MODEL BAS40 BAS40 BAS40 BAS40 -12 + VJ = 0.3192 + M = 0.4008 + FC = 0.5 + TT = 0 + EG = 0.69 + XTI = 2 .ENDS * www.datasheetarchive.com/download/31383580-596958ZC/30908.zip (BAS40_05V.prm) |
NXP | 23/10/2012 | 63.26 Kb | ZIP | 30908.zip |
| * * * *1PS75SB45 1PS75SB45 1PS75SB45 1PS75SB45 * *NXP Semiconductors *General-purpose Schottky diodes * * * * *IFSM = 200mA @ tp > 10ms *VF = 380mV @ IF = 1mA * * * * * * * * * *Package: SOT323 * *Package Pin 1 : Anode D1 *Package Pin 2 : Anode D2 modeling in the reverse * mode of operation. * R1 1 2 8E+08 D1 1 2 1PS75SB45 1PS75SB45 1PS75SB45 1PS75SB45 * .MODEL 1PS75SB45 1PS75SB45 1PS75SB45 1PS75SB45 D = 0.3192 + M = 0.4008 + FC = 0.5 + TT = 0 + EG = 0.69 + XTI = 2) .ENDS * www.datasheetarchive.com/download/31383580-596958ZC/30908.zip (1PS75SB45.prm) |
NXP | 23/10/2012 | 63.26 Kb | ZIP | 30908.zip |
| Footrpint Testpoint, Alum SANYO Taiyo Yuden Motorola Diode, Dual P-Chan., Siliconix LTC4008EGN, 4A Li-ion Battery Charger Vout Diodes Inc., PACKAGE MANUFACTURE MANU SCH, LTC4100GN24 LTC4100GN24 LTC4100GN24 LTC4100GN24, 4A BATTERY CHARGER Scale SCH UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES TOLERANCE ON ANGLE - - - 2 PLACES - - - 3 PLACES Carthy Blvd. Milpitas, CA 95035 CONN DSUB 15-R.Normal Testpoint DIODE SCHOTTKY CONN DSUB 15-R RESISTOR RESISTOR DIODE SCHOTTKY CONN DSUB 15-R RESISTOR RESISTOR RESISTOR Custom LOBAT CHARGE SHUTDOWN DCIN MONITOR www.datasheetarchive.com/download/9839517-348411ZC/519a.zip (519A-3.DSN) |
Linear | 09/02/2007 | 1244.8 Kb | ZIP | 519a.zip |
| , Alum SANYO Taiyo Yuden Motorola Diode, Dual P-Chan., Siliconix LTC4008EGN, 4A Li-ion Battery Charger Vout Diodes Inc., PACKAGE MANUFACTURE MANU SCH, LTC4100GN24 LTC4100GN24 LTC4100GN24 LTC4100GN24, 4A BATTERY CHARGER Scale SCH, LTC4100GN24 LTC4100GN24 LTC4100GN24 LTC4100GN24 UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES TOLERANCE ON ANGLE - - - 2 PLACES - - - 3 PLACES ANODE CATHODE Vbias Vout DIODE SCHOTTKY CONN DSUB 15-R RESISTOR RESISTOR DIODE SCHOTTKY CONN DSUB 15-R RES,0603 5.21K OHMS 1% 1/16W 1/16W 1/16W 1/16W RES,0603 5.1K OHMS 5% 1/16W 1/16W 1/16W 1/16W RES,0603 100K OHMS 5% 1/16W 1/16W 1/16W 1/16W DIODES INC. BAV70 BAV70 BAV70 BAV70 www.datasheetarchive.com/download/68162161-365183ZC/527a.zip (527A-6.DSN) |
Linear | 22/09/2009 | 710.99 Kb | ZIP | 527a.zip |