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HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station visit Texas Instruments
POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
SOLARMAGIC-SOLARPOWEROPTIMIZER-REF Texas Instruments SolarMagic SM3320-RF-EV Solar Power Optimizer with RF Communications Reference Design visit Texas Instruments
POE-PD-POWER-REF Texas Instruments LM5072 5V out 25W IEEE 802.3at Compliant POE+ PD Power Reference Design visit Texas Instruments
UC2727DWPTR Texas Instruments Isolated High Side IGBT Driver 28-SOIC -40 to 85 visit Texas Instruments
UC3727N Texas Instruments Isolated High Side IGBT Driver 20-PDIP 0 to 70 visit Texas Instruments
UC2727N Texas Instruments Isolated High Side IGBT Driver 20-PDIP -40 to 85 visit Texas Instruments
UC3727DWP Texas Instruments Isolated High Side IGBT Driver 28-SOIC 0 to 70 visit Texas Instruments
UC2727DWP Texas Instruments Isolated High Side IGBT Driver 28-SOIC -40 to 85 visit Texas Instruments
UC3727DWPTR Texas Instruments Isolated High Side IGBT Driver 28-SOIC 0 to 70 visit Texas Instruments
UC2727QP Texas Instruments Isolated High Side IGBT Driver 28-PLCC -40 to 85 visit Texas Instruments
UC2727QPTR Texas Instruments Isolated High Side IGBT Driver 28-PLCC -40 to 85 visit Texas Instruments

igbt high power

Catalog Datasheet MFG & Type PDF Document Tags

hvdc

Abstract: thyristor power the Home News Addresses Editorials Products Company .Core Search future Site Content Help Competence Application: Products: Motor Drives Traction Electrical Vehicles HVDC Transmission Power Supply Medical Equipment Wind Power Inductice Heating Welding IGBT Modules IGBT High Power Modules IGBT High Voltage Modules Power Integrated Modules PIM , F-Thyristor discs N-Diode discs Fast switching Diode discs IGBT Stacks and Drivers Stacks with Thyristors
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Thyristor catalog

Abstract: MOSFET Modules . . Home Products News Contact Editorials Job Offers Company Search power Site Content the future Short Form Catalog click to select data table - then click on outline for drawing Modules IGBT High Power Modules IGBT Standard Modules Mosfet Modules Power Integrated Modules PIM Phase Control , Attachements for Modules Heatsinks (see Stack Datasheets) IGBT Stacks & Driver Letter Symbols Type Designation Contact Schottky Rectifier Diodes Rectifier Diode Bridges Low Power Diodes Terms of delivery Eupec
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EUPEC

Abstract: eupec igbt conductor products, including IGBT high power and standard modules, thyristors and diodes. delivery , . Power (W) 100M eupec Product Range lî H Util II li ; e 10M SCR + Diode phase control ß Ü
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BSM50GD120DN2E3226

Abstract: FF300R12KE3 IGBT High Power Modules 1200 VCES 1200 VCES Type *) Dual modules IH1/4 IH7 , Explanations 6 IGBT High Power Modules 1600 VCES Type *) Standard 2. Generation FF400R16KF4 , IH2/60 IH2/60 *) valid for all part-no: Tvj = 125°C, ICRM = 2xlC IGBT High Power Modules , Explanations 8 IGBT High Power Modules 6500 VCES Type *) Standard FZ200R65KF1 FZ400R65KF1 , : Tvj = 125°C, ICRM = 2xlC 5 IGBT SCR / Diode Modules Presspacks Stacks Outlines
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FF600R12KE3 FZ1600R12KF4 BSM50GD120DN2E3226 FF300R12KE3 bsm25gp120 b2 FZ1200R16KF4 FF400R33KF2 FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C

MG25N2YS1

Abstract: t100a GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance . High Speed : tf=1. Ous (Max.) trr=0.5ys(Max.) MG25N2YS1 . Enhancement-Mode . Includes a Complete Half Bridge in one Package. . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT Weight : 222g (Bl) (B2) MAXIMUM RATINGS (Ta=25°C) SYMBOL VCES vges , Collector Power Dissipation Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque
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t100a LF25A A 222G mg25n2

igbt high power

Abstract: MG75N1BS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance . High Speed : tf=1.0iis(Max.) . Low Saturation Voltage : VcE(sat) = 5.0V(Max.) . Enhancement-Mode . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT a(B)o- Weight : 90g ÒE MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Collector Power Dissipation (Tc=25°C) Junction Temperature Storage
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MG75N1BS1 igbt high power

EUPEC Thyristor

Abstract: thyristoren Content eupec Presentation Terms of Delivery High Power Components IGBT High Power Modules IGBT , Fast Rectifier Diodes Avalanche Rectifier Diodes Insulated Cellss Low Power Components Schottky Rectifier Diodes Rectifier Diode Bridges Low Power Diodes Accessories Clamping Force Clamping Devices Gate Leads Heatsinks Drivers for IGBT & Power Mosfet IGBT Stacks & Driver Explanations Letter Symbols Type , Power Mosfet IGBT Baugruppen und Treiber Erläuterungen Kurzzeichen Typenbezeichnungen
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EUPEC Thyristor thyristoren Eupec thyristors catalog MOSFET Modules mosfet catalog IGBT EUPEC

BSM25GP120 b2

Abstract: BSM50GD120DN2E3226 IS14/69 kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 15 IGBT High Power Modules , IGBT High Power Modules 1600+1700 VCES Type *) Dual modules IH1 IH7 Single modules , Explanations 18 IGBT High Power Modules 6500 VCES Type *) Standard FZ200R65KF1 FZ400R65KF1 , -2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 9 Power Integrated Modules PIM 600 VCES Type VCES V IGBT Inverter , High Power Modules 2500+3300 VCES Type *) Standard FF200R33KF2 FF400R33KF2 FF500R25KF1
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FB10R06VL4 FP15R12YT3 BSM15GP120 b2 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FB6R06VL4 FB10R06KL4 FB10R06KL4G FP10R06KL4 FB15R06KL4

MG240V1US41

Abstract: DIODE i2t TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG240V1US41 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: tf = 1.5µs (Max.) (IC = 240A) trr = 0.6µs (Max.) (IF = 240A) · Enhancement , V DC IC 240 1ms ICP 480 DC IF 240 1ms IFM 480 Collector Power , with us before you use these TOSHIBA products in equipments which require high quality and/or
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DIODE i2t PW04540796

mg300* toshiba

Abstract: 300AVGE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) VCE , 600 Collector Power Dissipation (Tc = 25°C) PC 1300 W Junction Temperature Tj , with us before you use these TOSHIBA products in equipments which require high quality and/or
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mg300* toshiba 300AVGE TOSHIBA MG300J2YS50 PW03190796

igbt 25A toshiba

Abstract: MG25Q6ES42 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.5µs (Max.) trr = 0.5µs (Max.) · Low saturation voltage: VCE , 50 Collector Power Dissipation (Tc = 25°C) PC 200 W Junction Temperature Tj 150 , use these TOSHIBA products in equipments which require high quality and/or reliability, and in
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igbt 25A toshiba Toshiba transistor Ic 100A PW03810796

MG200H2YS1

Abstract: GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.Ovs(Max.) trr=0. 5(is(Max.) . Low Saturation Voltage : VcE(sat)=5.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One Package. . The Electrodes are Isolated from Case. MG200H2YS1 Unit in mm EQUIVALENT CIRCUIT El Q Clo~ -O0 01 ÍB1 , Voltage Gate-Eraitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation
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MP6750

Abstract: toshiba mp6750 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6750 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.35µs (Max.) (IC = 15A) trr = 0.15µs (Max.) (IC = 15A) · Low , 30 DC IF 15 1ms IFM 30 Collector Power Dissipation (Tc = 25°C) PC 55 W , equipments which require high quality and/or reliability, and in equipments which could have major impact to
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toshiba mp6750 toshiba motor PW03010796

MG300J2YS40

Abstract: TRANSISTOR bu 406 MÃ300J2YS40 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. , High Inputâ Impedance . High Speed : tf=0.35us (Max,) trr=0.15tis (Max.) . Low Saturation Voltage : VCF.(sat) = 3-5V (Max.) . Enahncement-Mode . Includes a Complete Half Bridge in One Package . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT El O Cl E2 o o E2 0 o 1 El /C2 G2 , 600 Forward Current DC IF 300 A 1ms TFM 600 Collector Power Dissipation (Tc=25°C) Pc 1200 W
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MG300J2YS40 TRANSISTOR bu 406 MG300J2YS40 igbt 28106 008j CL 6503 U-15V

FS300R12OE4P

Abstract: FP06R12W1T4 , on our website www.infineon.com/highpower, these links are active. IGBT High Power Wir bieten , manufacturing. IGBT Low Power Hochleistungshalbleiter für Ihre Industrieanwendungen High power , Links2.22 IGBT Modules - High Power Overview IGBT 3.1 3.2 Overview Module Systems 4.2 MIPAQTM4 , VII IGBT Medium Power IGBT Low Power IGBT High Power Module Systems IGBT Medium Power , Short Form Catalog 2012 High Power Semiconductors for Industrial Applications
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FS300R12OE4P FP06R12W1T4 FS450R12OE4P F3L400R12PT4 bt 1690 scr FF150R12RT4 B133-H9378-G3-X-7600

1287-standard

Abstract: SiC IGBT High Power Modules during the introduction of IGBT high power modules. 10.000.000 IHV (traction) Since their market introduction in the beginning of 1995, eupec IGBT high power modules (IHM) got a quick access to , Bonding A high power IGBT module comprises approx. 450 wires together with 900 wedge bonds. For many , . Lefranc, R. Spanke, ,Multichip high power IGBT modules for traction and industrial applications," , bond contact. Test results of short time power cycling on IGBT modules with up to 24 paralleled IGBT
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1287-standard SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit

MG150J2YS50

Abstract: mg150j2y TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG150J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.30µs (Max.) (IC = 150A) trr = 0.15µs (Max.) (IF = 150A) VCE , 300 Collector Power Dissipation (Tc = 25°C) PC 780 W Junction Temperature Tj 150 , use these TOSHIBA products in equipments which require high quality and/or reliability, and in
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mg150j2y PW03160796

MG75J2YS50

Abstract: Toshiba transistor Ic 100A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: tf = 0.30µs (Max.) (IC = 75A) trr = 0.15µs (Max.) (IF = 75A) · Enhancement mode , Collector Power Dissipation (Tc = 25°C) PC 390 W Junction Temperature Tj 150 °C , use these TOSHIBA products in equipments which require high quality and/or reliability, and in
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toshiba mg75j2ys50 diode bridge toshiba PW03100796
Abstract: TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS GT15Q301 GT15Q301 The 3rd Generation Enhancement-Mode High Speed : tf=0.40/.iS (Max.) Low Saturation Voltage : V q e (sat) = 3.5V (Max.) FRD included , Gate-Emitter Voltage Collector Current Emitter-Collector Forward Current Collector Power Dissipation (Tc = 25 , Reverse Recovery Time - - : 300 ns trr Thermal Resistance (IGBT) - ; 0.69 °C /W - - R t h (j-c) - -
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961001EAA1

igbt 25A toshiba

Abstract: MG25Q2YS40 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.) Low , ICP 50 DC IF 25 1ms IFM 50 Collector Power Dissipation (Tc = 25°C) PC , equipments which require high quality and/or reliability, and in equipments which could have major impact to
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Toshiba bridge diode TOSHIBA IGBT toshiba power module PW03790796
Abstract: TOSHIBA TOSHIBA INTELLIGENT POWER MODULE M IG400J101H SILICON N CHANNEL IGBT HIGH POWER , Power Circuits & Control Circuits (IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over Temperature) in One Package. The Electrodes are Isolated from Case. High Speed Type IGBT : (sat) = , Colleetor-Emitter Voltage Collector Current Forward Current Collector Power Dissipation Junction Temperature Control , Temperature Range Isolation Voltage Screw Torque CONDITION P-N power terminal - Tc = 25°C, DC Tc = 25°C, DC -
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2-121A1A

MG50J2YS50

Abstract: IGBT MG50J2YS50 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) · Enhancement , DC IF 50 1ms IFM 100 Collector Power Dissipation (Tc = 25°C) PC 280 W , equipments which require high quality and/or reliability, and in equipments which could have major impact to
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IGBT MG50J2YS50 MG50J2 td 4950 PW03070796

MG400H1US1

Abstract: GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. MG400H1US1 . High Input Impedance . High Speed : tf=1.0ys(Max.) trr=0.5ys(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) . Enhancement-Mode . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT E C O y -t-1 O E O G Weight : 490g (B) MAXIMUM RATINGS (Ta , Collector Power Dissipation (Ta=25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw
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MG200J2YS50

Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG200J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.30µs (Max.) (IC = 200A) trr = 0.15µs (Max.) (IF = 200A) VCE , 400 Collector Power Dissipation (Tc = 25°C) PC 900 W Junction Temperature Tj 150 , use these TOSHIBA products in equipments which require high quality and/or reliability, and in
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SM-150 diode

Abstract: TOSHIBA TOSHIBA INTEGRATED IGBT MODULE MIG30J806H/HA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MIG30J806H, MIG30J806HA · · · · · Integrates Inverter, Converter Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 3 < f> 30A / 600V IGBT Input (Converter Stage) : 3 < f> 30A / 800V Silicon Rectifier The Electrodes are Isolated , Colleetor-Emitter Voltage Gate-Emitter Voltage DC Collector Current 1ms DC Forward Current 1ms Collector Power
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SM-150 diode 2-108E3A 2-108E4A 961001EAA2

DIODE i2t

Abstract: MG15Q6ES42 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG15Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.5µs (Max.) trr = 0.5µs (Max.) · Low saturation voltage: VCE , 30 Collector Power Dissipation PC 125 W Junction Temperature Tj 150 °C , use these TOSHIBA products in equipments which require high quality and/or reliability, and in
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PW03770796

la7200

Abstract: MG50N2YS GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1.Oys(Max.) trr=0.5 , Voltage Gate-Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation
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la7200 MG50N2YS MG50N2YS1
Abstract: TOSHIBA TENTATIVE MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG25Q6ES50 · · · · High Input Impedance High Speed : tj'=0.3/^s (Max.) @ Inductive Load Low Saturation Voltage : v CE(sat) = 3-o v (Max.) Enhancement-Mode Includes a Complete Half Bridge in One Package. The Electrodes are Isolated from Case. EQUIVALENT , Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation -
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9610Q1EAA1

MG100H2YS1

Abstract: A756 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1.0tfs(Max.) trr"0-5fis(Max.) . Low Saturation Voltage : VcE(sat)=5.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One Package. . The Electrodes are Isolated from Case. MG100H2YS1 Unit in mm 4-PAST-ON -TAB + 1 1 0 3±0.3 i ¿ 6 ± o s z o , Forward Current DC 1ms Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature
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A756

equivalent MP6752

Abstract: MP6752 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.35µs (Max.) (IC = 20A) trr = 0.15µs (Max.) (IC = 20A) · Low , 40 DC IF 20 1ms IFM 40 Collector Power Dissipation (Tc = 25°C) PC 60 W , equipments which require high quality and/or reliability, and in equipments which could have major impact to
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PW03020796 equivalent MP6752 P channel 600v 20a IGBT

IGBT FZ 800

Abstract: IGBT FZ 1000 IGBT High Power Modules T ype V ces V O ICRM A VcEsat V ton ts tf RthJC ° c /w p e r arm Tvj max ; o u tlin e t 0 = 1 ms Tvj=25°C typ. MS Tvj=25°C typ. MS Tvj=25°C typ. > MS TV j=25°C typ. °c I Dual modules FF 200 R 33 KF2 B1 FF 400 R 12 KF4 FF FF FF FF FF FF FF FF FF FF 400 400 400 400 400 500 600 600 600 600 R 12 KL4C R 16KF4 R17KF4 R 17 KF6 B2 R 33 , i New type not for new design 4 IGBT High Power Modules Type Vces V lc A IcRM A
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IGBT FZ 800 IGBT FZ 1000 FZ 800 R 12 KF6 FZ 5.1 IGBT FZ 1200

MG8N6ES1

Abstract: mg8n6es GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. MG8N6ES1 . T h e C o l l e c t o r is I s o l a t e d f r o m C a s e . 6 I G B T s a r e B u i l t - i n to 1 P a c k a g e . . With B u i l t - i n Free W h e e l i n g Diodes. . Low Saturation Voltage : VcE(sat)=5V(Max.)(Ic=8A) . High Speed : tf =l us(M ax.)(Ic=8A) Weight : 225g EQUIVALENT , Gate-Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation Junction
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MG8N6ES1 mg8n6es

delta inverter driver

Abstract: FZ1200R33KF1 of Modules with screw terminals and sizes of up to 190mm by 140mm (IHM: IGBT High Power Modules; IHV: IGBT High Voltage Module). All of these modules have several chips in parallel. Therefore one , tests of multichip high power IGBT modules (FZ1200R33KF1) Reliability A lot of efforts have been , the integration of high power single switches, which consist of a large number of chips in parallel , high power ratings the base plates are especially manufactured to maintain a convex shape. The
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delta inverter driver ECONOPACK siemens igbt siemens partial discharge IGBT parallel siemens IGBT 600a D-59581
Abstract: TO SH IBA TENTATIVE MIG50J804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MIG50J804H · Integrates Inverter, Converter Power Circuits in One Package. · Output (Inverter Stage) : 3ji 50A /600V High Speed Type IGBT VCE (sat) = 2.80V (MAX.) tf = 0.30^s (MAX.) tr r = 0 .1 5 //s (MAX.) · Input (Converter , Converter Collector Power Dissipation (Tc = 25°C) Repetitive Peak Reverse Voitage Average Output -
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Abstract: TOSHIBA TENTATIVE MIG30J904H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MIG30J904H · · Integrates Inverter, Converter and Brake Power Circuits in One Package. Output (Inverter Stage) : 3 , ) Collector-Emitter Voltage Gate-Em itter Voltage DC IGBT Collector Current 1ms Collector Power Dissipation Brake (Tc -
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61001EAA1

8J101

Abstract: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T 8J101 r, T s 11 n 1 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10 + 0.3 Unit in mm , f 3.2 ± 0 . 2 2.7±02 · · · · High Input Impedance High Speed : tf=0.35^s (Max.) Low Saturation Voltage : V qe (sat)~^.0V (Max.) Enhancement-Mode SYMBOL DC lm s MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Power Dissipation (Tc = 25°C) Junction
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2-10R1C
Abstract: TOSHIBA {DI SC RE TE /OPT O} * â  dF 9097250 TOSHIBA (DISCRETE/OPTO) TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . Higl) Speed â'ž : tf=1.0ys(Max.) . Low Saturation Voltage , Power Dissipation (Tc=25°C) Screw Torque (Terminal/Mounting) - 2500 (AC, 1 Minute) 20/30 V -
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EGA-MG50H1BS1-1 T-33-/3 EGA-MG50H 50HIBS1-A

7078a

Abstract: bup 200 transistor SIEMENS IGBT (High Power Switch) Preliminary Data BUP 202 vCE = 1000 v lc = 8 A · · · · · · · · · N channel MOS in pu t (volta ge -controlle d) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity A valanche-proof La tch-up -fre e Package: TO -220 A B 1) Type BUP 202 Ordering code C 6 7078-A 4401-A 2 Maximum Ratings Parameter C o , category, DIN 4 0 0 4 0 IEC clim atic category, DIN IEC 68-1 Therm al resistance C h ip -c a s e IGBT
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7078a bup 200 transistor

600R12KF4

Abstract: IGBT FZ 1200 kf1 IGBT High Power Modules Type VcES V lc A I CRM A tp = 1 ms VcEsat V tvj=25°C typ. ton |js tvj=25°C typ. ts MS tvj=25°C typ. tf MS tvj=25°C typ. Rihjc °c/w per arm tvj max °c outline Dual modules ⼠FF 400 R 12 KF4 1200 400 800 2,7 0,7 0,90 0,25 0,040 150 1.1 Y FF 400 R 16 KF4 1600 400 800 3,3 0,8 1,10 0,25 0,040 150 1.1 ⼠FF 400 R 33 KF1 Data on request ⼠FF 600 R 12 KF4 1200 600 1200 2,7 0,7 0,90 0,25 0,032 150 1.1 ⼠FF 600R16KF4 Single modules 1600 600 1200 3,5 0,8 1,10 0
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600R12KF4 IGBT FZ 1200 kf1 R16KF4 00D2153 00021SS

IGBT FZ 1200 kf1

Abstract: 600R16KF4 IGBT High Power Modules Type VCES V le A IcRM A tp = 1 ms VcEsat V tvj=25°C typ. ton MS tvj=25°C typ. ts |JS tvj=25°C typ. tf MS tvj=25°C typ. R,hjc °c/w per arm tvj max °c outline Dual modules ⼠FF 400 R 12 KF4 1200 400 800 2,7 0,7 0,90 0,25 0,040 150 1.1 Y FF 400 R 16 KF4 1600 400 800 3,3 0,8 1,10 0,25 0,040 150 1.1 ⼠FF 400 R 33 KF1 Data on request ⼠FF 600 R 12 KF4 1200 600 1200 2,7 0,7 0,90 0,25 0,032 150 1.1 ⼠FF 600R16KF4 Single modules 1600 600 1200 3,5 0,8 1,10 0
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bs 1600
Abstract: TOSHIBA TOSHIBA INTELLIGENT POWER MODULE MIG100Q201H SILICON N CHANNEL IGBT HIGH POWER , Power Circuits & Control Circuits (IGBT drive units, Protection units for Over-Current, Under-Voltage & Over-Temperature) in One Package. The Electrodes are Isolated from Case. High Speed Type IGBT : V ce (sat) = 3-5V , Colleetor-Emitter Voltage Collector Current Forward Current Collector Power Dissipation Junction Temperature Supply Voltage Colleetor-Emitter Voltage Collector Current Reverse Voltage Forward Current Collector Power -
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2-136A1A
Abstract: TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT60M302 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS GT60M302 · · · · The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT FRD tf=0.22/¿s (TYP.) trr -0.7/¿s (TYP.) · Low , Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Emitter-Collector Foward Current Collector Power , / jus IGBT Diode - - - - - - - 600V 0.625 °C/W 4.0 °C/W 2 2 002 02-06 - -
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MIG20J855H

Abstract: TOSHIBA TENTATIVE MIG20J855H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MIG20J855H U n it in mm · In tegrates Inverter, Converter Power C ircuits in One Package. · Output (Inverter Stage) : 3 , G ate-E m itter Voltage Collector Current Inverter Forward Current Collector Power Dissipation (Tc =
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MG200H2YS1

Abstract: IS002 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.0Ms(Max.) trr= 0.5ys(Max.) . Low Saturation Voltage : VcE(sat)=5.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One Package. . The Electrodes are Isolated from Case. MG200H2YS1 EQUIVALENT CIRCUIT Cl o- Ô 01 (Bl) O El/02 , Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw
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IS002 MG200H2Y
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features â'¢ 6 IGBTs are built into 1 package â'¢ High speed: tf = 0.35ps (Max.) (Ic = 20A) trr= 0 .1 5 ms (Max.) (Ic = 20A) â'¢ Low , 1ms â  cp 40 DC If 20 !fm 40 Collector Power Dissipation (Tc = 25°C) Pc , require high quality and/or reliability, and in equipments which could have major impact to the welfare of -
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DDS1D01

MG400Q1US1

Abstract: MG400Q1US11 SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GTR MODULE MG400Q1US1/MG400Q1US2 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=0.5(Js (Max. ) trr=0.5ps(Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT MG400Q1US1 E O C O- 1 G (B) -O , Forward Current DC If 400 A 1ms I FM 800 Collector Power Dissipation (Ta=25°C) PC 2400 W Junction
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MG400Q1US2 MG400Q1US11 mg400q1us1-1 2-109A4A GT1A120 MG400Q1US1-1 MG400Q1US1-4 MG400Q1US1-5
Abstract: TOSHIBA MG400J2YS50 Mfn/innnY^n TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. · · · · The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode H ighspeed : tf=0.30//s (M ax.)(lc = 400A) tr r =0.15//s (Max.) (I;p = 400A) Low Saturation Voltage : v CE(sat) = 2.70V , E1/C 2 G2 MAXIMUM RATINGS (Ta = 25°C) DC 1ms DC Forward Current lïïlS Collector Power Dissipation -
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G400J2YS50

bup 200 transistor

Abstract: bup transistor SIEMENS IGBT (High Power Switch) Preliminary Data VC E = 1200 V /c = 1.5 A · · · · · · · · · N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity A valan che-p roo f L a tch-up -fre e Package: TO -220 A B 1) BUP 200 Type BUP 200 Ordering code C 67078-A 4400-A 2 Maximum Ratings Parameter C o lle cto , IEC 68-1 Therm al resistance C h ip -c a s e IGBT = Insulated Gate Bipolar Transistor ') See chapter
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bup transistor

TOSHIBA IGBT

Abstract: 800 kw Toshiba AC motor TOSHIBA MG900GXH1US53 TOSHIBA IGBT (TENTATIVE DATA) MODULE MG900GXH1US53 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features · High Input Impedance · Enhancement Mode · Electrodes are Isolated from Case EQUIVALENT CIRCUIT MAXIMUM RATINGS , ICP 1800 (NOTE.2) A IFSM 6600 A Collector Power Dissipation(Tc=25degC) PC , high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
Toshiba
Original
800 kw Toshiba AC motor 4 kw Toshiba AC motor diode 900A
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25J6ES40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features â'¢ 6 IGBTs are built into 1 package â'¢ High speed: tf = 0.35ns (Max.) (Ic = 25A) â'¢ Low saturation voltage , DC â  c 25 1ms â'¢cp 50 DC lF 25 1ms â'¢fm 50 Collector Power , require high quality a nd/or reliability, and in e quipm ents w hich c o uld have m ajor im pact to the -
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PW03050796
Abstract: T O SH IB A TOSHIBA INTELLIGENT GTR MODULE MIG100J201 HC SILICON N CHANNEL IGBT HIGH POWER , , Brake Power Circuits & Control Circuits (IGBT drive units, Protection units for Over-Current, Under-Voltage & Over-Temperature) in One Package. The Electrodes are Isolated from Case. High Speed Type IGBT , Collector-Emitter Voltage Collector Current Forward Current Collector Power Dissipation Junction Temperature Supply Voltage Collector-Emitter Voltage Collector Current Reverse Voltage Forward Current Collector Power -
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2-110A1A

MG400J2YS50

Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG400J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) VCE , 800 Collector Power Dissipation (Tc = 25°C) PC 1800 W Junction Temperature Tj , products in equipments which require high quality and/or reliability, and in equipments which could have
Toshiba
Original
PW03210796

MG25N1JS1

Abstract: GTR MODULL SILICON N CHANNEL IGBT HIGH POWER S W I T C H I N G A P P L I C AT ION S. M O T O R C O N T R O L A P P L I C AT ION S. . High Input Impedance . High Speed : tf= 1 . Ous( M a x . ) t r r = 0 . 5 n s ( M a x .) . Low Saturation Voltage: . Enhancement-Mode . The Electrodes are Isolated f r o m C a se. Vçjr ( s a t) = 5 .OV ( M a x . ) MG25N1JS1 EQUIVALENT CIRCUIT (El) E Weight , 200 150 -40-125 2500 (AC 1 M i n u t e ) 30/30 UNIT V V A Forward Current Collector Power
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1000U
Abstract: TOS HIB A { D I S C R E T E / O P T O } io 9097250 TOSHIBA (DISCRETE/OPTO) T O S H IB A de l'ìc m a sa 90D SEMICONDUCTOR DD i b i i a i g 16161 D T ~ ? 3 - I3 TOSHIBA GTR MODULE MG25N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1.0(Js(Max.) . , ±20 V ic 25 1ms Collector Current DC ICP UNIT 50 Collector Power -
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25NIBS 25N1B EGA-MG25N1BS1-A

mg15h1

Abstract: T oshiba { discrete/ opto} 9097250 TOSHIBA TOSHIBA to , Gate-Emitter Voltage vges DC ic Ins ICP Collector Current Collector Power Dissipation PC
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mg15h1 MG15H1BS1 MG15H1BS1-1 DT-33-/3 DISCRETE/0PT01
Abstract: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT60M104 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS G T 6 0 M 1 04 ¿0-5MAX. Unit in mm 0 3 .3± O .2 High Input Impedance High Speed : tf=0.4//s (Max.) Low Saturation Voltage : V q e (sat)~^-?V (Max.) Enhancement-Mode Recommended FRD S5J12 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature -
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2-21F2C
Abstract: TOSHIBA TENTATIVE TOSHIBA GTR MODULE SILICON N MG50Q6ES50 CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG 50 Q 6ES50 · · · · · · High Input Impedance High Speed : tf= 0 .3 /iS (Max.) © Inductive Load Low Saturation Voltage : V cE (sat) = 3-0V (Max.) Enhancem ent-M ode Includes a Complete H alf Bridge in One Package. The Electrodes are Isolated from Case , itter Voltage Collector C urrent Forward C urrent Collector Power Dissipation (Tc = 25°C) Junction Tem -
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FZ 1800 R17 KF4

Abstract: IGBT FZ 1800 Click on outline no. IGBT High Power Modules Type *) Eon / VCES Ic A VCEsat RthJC outline Eoff V V °C/W Tvj=25° mWs per arm C typ. Tvj=125° C typ Dual modules Type VCES Ic A V VCEsat Eon / Eoff RthJC outline mWs V °C/W Tvj=25° Tvj=125° per arm C typ. C typ. *) Chopper modules FF 200 R 33 KF2 3300 200 3,4 480/255 0,057 IH9 FD 400 R 12 KF4 1200 400 2,7 70/60 0,046 IH2 FF 400 R 12 KF4 1200 400 2,7 70/60 0,046
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FZ 1800 R17 KF4 IGBT FZ 1800 KF6C 12KF4 FD 1200 FZ1000r 12KL4C
Abstract: SIEMENS IGBT (High Power Switch) Prelim inary D ata V0E = 1000 V /c =15 A · · · · · · · · · N channel M OS in pu t (volta ge -controlle d) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity A valanche-proof La tch-up -fre e Package: TQ -220 A B 1) BUP 203 Type BUP 203 Ordering code C 67078-A 4402-A 2 Maximum Ratings Parameter C o lle cto r-e m itte r voltage G ate-em itter voltage C ontinuous co lle cto r current, Tc = 25 °C Tc = 90 °C Pulsed co -
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100Q2YS51

Abstract: TO SH IBA TENTATIVE M G100Q 2YS51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG 100Q2YS51 A High Input Impedance High Speed : tf=0.3/^s (Max.) ^ u / i ii u u c ti v t i L /u a u _ _3 _J .* _T /^ \T _ _ 3 Low , Collector Current 1ms Forward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage , neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or
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Abstract: TOSHIBA TO SH IBA GTR M O D ULE MG75Q1BS11 M G 7 5 Q 1 BS1 1 SILICON N CHANNEL IGBT HIGH POWER; SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. U nit in mm High Input Impedance High Speed : tf= l.O.us (Max.) Low Saturation Voltage: V q e (sat) = 2.7V (Max.) Enhancement-Mode The Electrodes are Isolated from Case. EQ UIVALENT CIRCUIT G(B)t> JEDEC EIAJ TOSHIBA W e ig h t : 90 g , Gate-Emitter Voltage DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature -
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2-33D1A

MG15N1BS1

Abstract: Toshiba - d i s c r e t e /o p t o j c 9097250 TOSHIBA TOSHIBA to (DISCRETE/OPTO) de |c ]m7aso Goitisa i 90D 16152 SEMICONDUCTOR D T-33-/3 TOSHIBA GTR MODULE MG 1 5N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tfâ'l. Of/s (Max.) . Low Saturation , ±20 V Collector Power Dissipation IC 15 1ms Collector Current DC ICP 30 A
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MG15N1BS1 MG15N1BS1-1 MG15N16S1 EH755D MG15N1BS1-4
Abstract: TOSHIBA { D I SC RE TE /OPT O} *TG 9097250 TOSHIBA (DISCRETE/OPTO) TOSHIBA SEMICONDUCTOR dFI^CHTESO GDlbiao Q 90D 16120 D T - 33-/3 TOSHIBA GTR MODULE MG25H1BS1 TECHNICAL DATA SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1.Ojis(Max. ) . Low Saturation Voltage : Vc£(sat , RATING 500 V VGES Gate-Eraitter Voltage ±20 V Collector Power Dissipation DC ic -
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EGA-MG25111BS1-1 DTV33-/3 EGA-MG25H1BS1-3 25H1BS1-4

TOSHIBA IGBT

Abstract: TOSHIBA TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS , Circuits (IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature) in One Package. · The Electrodes are Isolated from Case. · High Speed Type IGBT : (sat) = 2.5 V (Max.) toff , Voltage Colleetor-Emitter Voltage Collector Current Forward Current Collector Power Dissipation Junction , Temperature Storage Temperature Range Isolation Voltage Screw Torque CONDITION P-N power terminal - Tc =
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MIG75J101H
Abstract: TOSHIBA TOSHIBA INTELLIGENT POWER MODULE M IG300J101H SILICON N CHANNEL IGBT HIGH POWER , Power Circuits & Control Circuits (IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over Temperature) in One Package. The Electrodes are Isolated from Case. High Speed Type IGBT : (sat)= , Colleetor-Emitter Voltage Collector Current Forward Current Collector Power Dissipation Junction Temperature Control , Temperature Range Isolation Voltage Screw Torque CONDITION P-N power terminal - Tc = 25°C, DC Tc = 25°C, DC -
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MG75Q2YS11

Abstract: MG75Q2YS1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features â'¢ High input impedance â'¢ High speed: tf = 1.0[is (Max.) t,- = 0.5ns (Max.) â'¢ Low saturation: VCE (sat)= 2.7V (Max.) â , Current DC If 75 A 1ms 'fm 150 Collector Power Dissipation , TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which
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MG75Q2YS1 MG-7 251C PW03870796

MG150Q2YS11

Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG150Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features â'¢ High input impedance â'¢ High speed: tf = 1 .O^s (Max.) = 0.5ns (Max.) â'¢ Low saturation: VcE(sat)= 2.7V , 1ms â'¢cp 300 DC If 150 1ms â'¢fm 300 Collector Power Dissipation (Tc = , require high quality and/or reliability, and in equipments which could have major impact to the welfare of
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PW03910796

MG75Q2YS11

Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features â'¢ High input im pedance â'¢ High speed: tf = 1 .0[is (Max.) â'¢ Low saturation: V CE tn- = 0.5 n s (Max.) 2 , Collector Power Dissipation (Tc = 25°C) Pc 600 W Junction Temperature Ti 150 °C , consult with us before you use these TOSHIBA pro du cts in equipm ents w hich require high q uality and
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n channel 600v 20a IGBT

Abstract: P3060 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.35|as (Max.) (Ic = 20A) t rr = 0.15|as (Max.) (Ic = 20A) · Low saturation voltage: Vqe (sat) = , Gate-Emitter Voltage DC Collector Current 1 ms DC Forward Current 1 ms Collector Power Dissipation (Tc = 25 , d u c ts in e q u ip m e n ts w h ich require high q ua lity a n d /o r reliability, a n d in e q u
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n channel 600v 20a IGBT P3060
Abstract: T O SH IB A MG75J2YS50 MG 7 5 J 2 YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. â'¢ â'¢ â'¢ The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One Package. Enhancement-Mode. High Speed :tf=0.30/iS (Max.) (Ic = 75A) trr=0.15/^s (Max.) (If = 75A) Low Saturation Voltage , Voltage Gate-Emitter Voltage Collector Current Forward Current DC 1ms DC 1ms Collector Power -
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mg200q2ys11

Abstract: MG200Q2YS1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG200Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications 3-M 5 Motor Control Applications Features â'¢ High input impedance â'¢ High speed: tf = 1 .Ojas (Max.) â'¢ Low saturation voltage: = 0.5|is (Max.) VCE (sat) = 2.7V (Max.) â'¢ Enhancement mode îostoj» â'¢ The electrodes are isolated from , !cp 400 DC If 200 1ms â'¢fm 400 Collector Power Dissipation (Tc = 25Â
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MG200Q2YS1 2-109B4A 00220T4 PW03940796 DQ22QT

MG200H2YS1

Abstract: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TO SH IBA â Ã¬o de 90D (DISCRETE/OPTO) SEMICONDUCTOR | ^0^7850 gp i b m ? a 16147 T -33-27 D TOSHIBA GTR MODULE MG200H2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed â'¢ : tf*=1.0(is(Max.) trr=0.5fis(Max.) . Low Saturation , Voltage Collector Current Forward Current Collector Power Dissipation (Tc«25°C) A A
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MG200H2YS1-1 DT-33 11I--- MG200H2YS1-4 DTV33- MG200H2YS1-5

MG25N2YS1

Abstract: mg25n2 TOSHIBA O I S C R E T E / O P T O J _ ^0 9 0 9 7 2 5 0 TO SH IBA (D IS C R E T E / O P T O ) TO SH IBA PEIâ'˜ ìCHTgSO 0 0 1blfc, D I 5 90D 16165 SEMICONDUCTOR -f~33~27 TOSHIBA GTR MODULI; MG25N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . Higli Input Impedance . High Speed , Forward Current ic 25 1ms Collector Current DC IFM UNIT 50 Collector Power
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175SD S03G05 EGA-MG25K
Abstract: SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS · · · Integrates Inverter Power Circuits & Control Circuits (IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature) in One Package. The Electrodes are Isolated from Case. High Speed Type IGBT , urrent Forward C urrent Collector Power Dissipation Junction Tem perature Control Supply Voltage Input , Isolation Voltage Screw Torque CONDITION P-N power term inal - Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C - -
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MIG150Q101H TLP559
Abstract: T O S H IB A TENTATIVE MG75Q2YS52 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG75Q2YS52 · · · · · · High Input Impedance High Speed : tf=0.3^s (Max.) @Inductive Load Low Saturation Voltage : v CE(sat) = 3-6Y (Max.) Enhancement-Mode Includes a Complete Half Bridge in One Package. The Electrodes are Isolated from Case. Eol E2 o , Current A !CP 1ms (25°C/80°C) 200/150 DC 75 If A Forward Current 1ms 150 ÏFM Collector Power Dissipation W -
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Abstract: TO SH IBA TOSHIBA INTELLIGENT POWER MODULE MIG75J7CSA0A SILICON N CHANNEL IGBT HIGH POWER , Inverter, Brake Power Circuit & Control Circuits (IGBT drive unit, Protection units for Short-Current, Over-Current, Under-Voltage & Over Temperature) in One Package. The Electrodes are Isolated from Case. High Speed, Low Saturation Type IGBT : V q e (sat) = 1*6 V (Typ.) 20 19 18 17 16 15 14 13 12 1110 9 8 7 6 5 4 , Forward Current Collector Power Dissipation Junction Temperature Supply Voltage Colleetor-Emitter Voltage -
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2-108G1A
Abstract: TOSHIBA TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS · · · MIG75J201H MIG75J201 H Integrates Inverter, Brake Power Circuits & Control Circuits (IGBT drive units, Protection units for Over-Current, Under-Voltage & Over-Temperature) in One Package. The Electrodes are Isolated from Case. High Speed Type IGBT : (sat) = 2.5V (Max , Supply Voltage Colleetor-Emitter Voltage Collector Current Forward Current Collector Power Dissipation -
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MG300Q1US11

Abstract: GE-540 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300Q1US11 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features â'¢ High input impedance â'¢ High speed: tf = 1 .O^s (Max.) t^ = 0.5|is (Max.) â'¢ Low saturation voltage: VCE ^ = 2.7V (Max.) â , Current DC lc 300 A 1ms 'cp 600 Forward Current DC If 300 A 1ms 'FM 600 Collector Power , equipments which require high quality and/or reliability, and in equipments which could have major impact to
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GE-540 221D GE-54 PW03960796 TDT72SD
Abstract: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features â'¢ High input impedance â'¢ High speed: â'¢ â'¢ â'¢ â'¢ tf = 1.Ojas (Max.) t|y = 0.5ns (Max.) VCE (sat , W eight : 445g A Ifm 200 Collector Power Dissipation (Tc = 25°C) Pc 800 W , p ro du cts in e quipm ents w h ich require high quality anttfor reliability, and in equipm ents -
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PW03890796

MG100Q2YS11

Abstract: 2-109B4A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG100Q2YS11 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features â'¢ High input impedance â'¢ High speed: tf = 1 .Ons (Max.) t^ = 0.5ns (Max.) VCE(sat)= 2.7V (Max.) â'¢ Low saturation: â , Current DC If 100 A 1ms 'fm 200 Collector Power Dissipation (Tc = 25°C) Pc 800 W Junction , equipments which require high quality andyor reliability, and in equipments which could have major impact to
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MG100Q2YS1 D022D1S D0220
Abstract: TOSHIBA {D IS CR ETE/OPTO } 909 7 25 0 TOSHIBA (DISCRETE/OPTO) TO SH IBA 90D SEM ICONDUCTOR 16179 D T - 2 , 3 '5 7 TOSHIBA GTR MODULE MG 1 0 0 N 2 Y S 1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed . : t£«1.0/Js(Max.) trrâ'0.5iis(Max.) . Low Saturation Voltage: VcE(sat , Collector Current Forward Current Collector Power Dissipation (Tc«25°C) Junction Temperature . -
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HG100H2YS1-1 MG100N2YS1 MG100N2YS1-4 HG100N2YS1-5

MG25Q2YS9

Abstract: SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : l_f-0. 5tis(Max.) trr= 0-5|is(Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One Package. . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT El E2 Weight ( B 1) (B2) : 202g MAXIMUM RATINGS (Ta , Collector Power Dissipation Junction Temperature Storage Temperature E.ange Isolation Voltage Screw Torque
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MG25Q2YS9

DIODE JS.4

Abstract: T O SH IB A MG150Q1JS40 m CHOPPER APPLICATIONS. · · High Input Impedance TOSHIBA GTR MODULE , riofû_F.miffûV VnlforfQ Collector Current Forward Current Collector Power Dissipation (Tc = 25°C) Junction
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DIODE JS.4

MG50Q2YS91

Abstract: 9t2 transistor TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50Q2YS91 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features â'¢ High input impedance â'¢ High speed: tf = 1 .O^is (Max.) V = 0.5ns (Max.) â'¢ Low saturation: VCE (sat)= 2.7V (Max.) â , Current DC 'f 50 a 1ms â'¢fm 100 Collector Power Dissipation (Tc = 25°C) PC 400 W Junction , theseTOSHIBA products in equipments which require high quality and/or reliability, and in equipments which
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PW03840796 9t2 transistor MG50Q2YS9 ic 7800

6.5kV IGBT

Abstract: IGBT Power Module siemens ag results of 6.5kV- Design Aspects for Inverters with IGBT High Power IGBT-modules the simulation , level. With the on the eupec concept for high power modules introduction of a vertically optimised , setting a new fout = 50 Hz, standard in the uppermost IGBT power range. cos = 0,9 , ] : H.P. Degisher, G. Lefranc, K.H.Sommer Al-SiC improves Reliability of IGBT Power Modules, Proc. ICCM , AG) Thomas Schütze (eupec GmbH & Co KG) Reinhold Spanke (eupec GmbH & Co KG) Power control in
Eupec
Original
6.5kV IGBT IGBT Power Module siemens ag infineon igbt reliability eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong

MG400H1US1

Abstract: ic 1200 p 60 TOSHIBA SEMICONDUCTOR TECHNICAL DATA TOSHIBA GTR MODULE MG400H 1 US 1 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . II i gli Inp u t Imp edan cc . H ig 11 Speed : t f = 1 . 0 fi s (Ma x. ) trr=0. 5tin (Max. ) . Low Saturation Vol tage: Vci:(sai :>.OV(Max. ) . E nh an c em en t. -Mod e . The Electrodes are Isolated from Case. Unit in nun â'¢ o-jf 4 , 400 A 1 m s IFM 800 Co 1 1 eet or Power ') i ss i pa t i on (I a=25° C) iJc 1400 W J un e t ion
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ic 1200 p 60 igbt toshiba mg MG400H1 MG400H1U

transistor 304

Abstract: BUP 307 SIEMENS IGBT (High Power Switch) BUP 304 BUP 307 lc · · · · · · · · · VC E = 1000 V /1 2 0 0 V = 25 A N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity A valan che-p roo f La tch-up -fre e Package: TO-218 AA Ordering code C 67078-A 4200-A 2 C 67078-A 4201-A 2 Type BUP 304 BUP 307 Maximum Ratings Parameter C o lle cto r-e m itte r voltage G ate-em itter voltage C ontinuous co lle cto r curre nt Tc rc
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transistor 304 BUP 307 bup307 transistor d 304 transistor 307
Abstract: TOSHIBA { D IS CR ETE/ OP TO} 9097250 TOSHIBA TOSHIBA "ID (DISCRETE/O PTO ) SEMICONDUCTOR DE [ t OTO SD []01t,;L3fl 7 | ~ 90D 16138 D TOSH I B A G T R M O D U L E M G 1 0 0 H 1 B S 1 TECHNICAL DATA SILICON N C H A N N E L IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR' CONTROL APPLICATIONS. FEATURES: . H i g h Input Impe d a n c e . H i g h Speed : tf , o l l e c t o r Current Collector Power Dissipation UNIT RATING I CP (Tc=25°C) A -
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G100H1BS1-3 R273R3E G100H1BS1-4
Abstract: TO SH IBA TOSHIBA INTELLIGENT POWER MODULE MIG50J7CSA0A SILICON N CHANNEL IGBT HIGH POWER , Inverter, Brake Power Circuit & Control Circuits (IGBT drive unit, Protection units for Short-Current, Over-Current, Under-Voltage & Over Temperature) in One Package. The Electrodes are Isolated from Case. High Speed, Low Saturation Type IGBT : v CE(sat) = !-6V (TyP-) EQUIVALENT CIRCUIT 20 19 18 17 16 15 14 13 , CHARACTERISTIC Supply Voltage Colleetor-Emitter Voltage Collector Current Forward Current Collector Power -
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IGBT FZ 800

Abstract: 12KL4C IGBT High Power Modules Type V ces IGBT-Hochleistungsmodule V cE sat V Ic A E o n / E o ff mWs T , j= 1 2 5 ° C ty p . R th J C o u t lin e Type V cE S V Ic A VcEsat V E o n / E o ff mWs R fh J C o u t lin e V Tv j= 25°c ty p . °c/w per a rm *) T,j=25°C ty p . °c/w per a rm TV j= 125°C ty p . *) Dual modules FF 200 R 33 KF2 FF400R 12KF4 FF 400 R 12 KL4C FF 400 R 16 KF4 FF 401 R 17K F 6 C B2 FF 400 R 33 KF1 FF 400 R 33 KF2 FF
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R12KL4C 0285 007 026 DD 115 N 400 K IGBT FZ 1200 R 33 KF1 FF R 1200 400S16K4 600S17K6B2
Abstract: TOSHIBA TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS · · · MIG50J201H MIG50J201H Integrates Inverter, Brake Power Circuits & Control Circuits (IGBT drive units, Protection units for Over-Current, Under-Voltage & Over-Temperature) in One Package. The Electrodes are Isolated from Case. High Speed Type IGBT : (sat) = 2.5V (Max , Supply Voltage Colleetor-Emitter Voltage Collector Current Forward Current Collector Power Dissipation -
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MG1200FXF1US53

Abstract: 4500a MG1200FXF1US53 TOSHIBA (Target Spec.) TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features High Input Impedance Enhancement Mode Electrodes are Isolated from Case EQUIVALENT CIRCUIT MAXIMUM RATINGS (Ta , Collector Power Dissipation Pc 4000 W Operating Junction Temperature Tj -40.125 degC , J - 1.7 - J - 1.3 - J Transistor(IGBT) Stage - - 8.0 degC /kW
Toshiba
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4500a Toshiba IGBT 1200A 3300V YG6260 ba qu diode ba 124 transistor BA RW
Abstract: T O SH IB A MIG100J201H MI G 1 0 0 J 2 0 1 H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS â'¢ â'¢ â'¢ â'¢ â'¢ Integrates Inverter, Brake Power Circuits & Control Circuits (IGBT drive units, Protection units for Over-Current, Under-Voltage & Over-Temperature) in One Package. The Electrodes are Isolated from Case. High Speed Type IGBT : VCE (sat) = 2.5V (Max.) toff= 3-0^s (Max.) trr = 0.30,tiS (Max.) Outline : TOSHIBA -
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Abstract: TO SH IBA TOSHIBA INTELLIGENT POWER MODULE MIG50J7CSA0A SILICON N CHANNEL IGBT HIGH POWER , Inverter, Brake Power Circuit & Control Circuits (IGBT drive unit, Protection units for Short-Current, Over-Current, Under-Voltage & Over Temperature) in One Package. The Electrodes are Isolated from Case. High Speed, Low Saturation Type IGBT : v CE(sat) = !-6V (TyP-) EQUIVALENT CIRCUIT 20 19 18 17 16 15 14 13 , CHARACTERISTIC Supply Voltage Colleetor-Emitter Voltage Collector Current Forward Current Collector Power -
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FS150R12KF4

Abstract: 400R12K samples. #1.Q'98 O 2. Q '98 4 3M03HT7 00Q25G4 fill IGBT High Power Modules Type Vces lc IcRM VcEsat , IGBT High-Power Module Type Range type current lc [A] 140x73mm Vce [V] 3300 140x130 mm module Vce [V] 600 1200 1600/1700 3300 140x190 mm m Vce [V] 600 j 1200 1600/1700 odule 2500 ! 3300 6-pack 150 200 300 400 600 800 ♦ ♦ ♦ ♦ , ♦ â² , , 5s, vV"' - 4-pack 300 400 600 ♦ ♦ * ! dual-module 200 400 500 600 800 1200 O ♦ â'¢ â¡ â¡ â'¢ â¡ 1 â¡ O chopper-module 400 600 800 â¡ â
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FS150R12KF4 400R12K DIODE e2l FF 400 R 14 FS200R12KF4 IGBT module FZ 1200 00G2S07
Abstract: TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE MIG20J806H/HA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MIG20J806H, MIG20J806HA Integrates Inverter, Converter Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 30 20A/600V IGBT Input (Converter Stage) : 3< f > 30A / 800V Silicon Rectifier The Electrodes are Isolated from , °C/40°C) (25°C / 40°C) Converter Collector Power Dissipation (Tc = 25°C) Repetitive Peak Reverse -
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Abstract: TO SH IBA TOSHIBA INTELLIGENT POWER MODULE MIG75J7CSA0A SILICON N CHANNEL IGBT HIGH POWER , Inverter, Brake Power Circuit & Control Circuits (IGBT drive unit, Protection units for Short-Current, Over-Current, Under-Voltage & Over Temperature) in One Package. The Electrodes are Isolated from Case. High Speed, Low Saturation Type IGBT : V q e (sat) = 1*6 V (Typ.) 20 19 18 17 16 15 14 13 12 1110 9 8 7 6 5 4 , Forward Current Collector Power Dissipation Junction Temperature Supply Voltage Colleetor-Emitter Voltage -
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NFF16101

Abstract: siemens symphony inverters with IGBT high power modules. PCIM Hongkong 10/97, Proceedings. High voltage IGBT modules in the , Power Capacitor Chips For Compact Converter Structures Die Designdifferenzierung in PCC HPTM für high , Power Capacitor Chips For Compact Converter Structures Harald Vetter Die neueste , der bewährten MKK-Technologie der Power Capacitor Chip (PCC) neu entwickelt mit dem Ziel, das Bemühen , IGBT und Kondensator hat sich die busbar durchgesetzt [4] [5] Bild 1). Zusätzliche
EPCOS
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NFF16101 siemens symphony alstom met PCC capacitor heft3

TIG056

Abstract: N2411 Ordering number : ENA1775A TIG056BF SANYO Semiconductors DATA SHEET TIG056BF Features · · · N-Channel IGBT High Power High Speed Switching Applications Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current (Pulse) Allowable Power Dissipation Channel , , traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and
SANYO Electric
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TIG056 N2411 2000F SC-67 TC-00002672/90110QJ TC-00002415
Abstract: TOSHIBA TOSHIBA GTR M O DU LE MG100J1ZS40 M G 1 0 0 J 1 Z S 40 SILICON N CHANNEL IGBT HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. Unit in mm 2-FAST-ON-TAB #110 · · · · · High Input Impedance High Speed : tf=0.35^s (Max.) tj.r = 0.15^s (Max.) Low Saturation Voltage : v CE(sat) = 3.5V (Max.) Enhancement-Mode The Electrodes are Isolated from Case. 4±0.5 4±0.5 , Gate-Emitter Voltage Collector Current Forward Current Collector Power Dissipation (Tc = 25°C) Junction -
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2-94D2A 100J1ZS40

1117 S Transistor

Abstract: TO SHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT10J312,GT10J312(SM) SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS GT10J312, GT10J312(SM) GT10J312 10.3 MAX Unit in mm The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s (Max.) Low , Voltage Gate-Emitter Voltage Collector Current Emitter-Collector Forward Current Collector Power , = - lOOA / ^s 200 ns trr Thermal Resistance (IGBT) 2.08 °C/W Rth Ci-c) 3.76 °c/w Thermal Resistance
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1117 S Transistor 2-10S1C 2-10S2C

FZ1200R33KF2C

Abstract: igbt 3.3kv High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip , design. IHM A IHM B Introduction Beginning in 1990 the IGBT high power module IHM with its base , Terminals in High Power IGBT Modules" Proc. PCIM, 2005, Nürnberg 3 J. Biermann, O. Schilling, J.G , sizes and attachment points. Present-day high power inverter design can not be any longer imagined , ). Although high power products do not apply to the scope specified by the directive, IHM B
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FZ1500R33HE3 FZ1500R33HL3 FZ1200R33KF2C igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1200r D-85579
Abstract: T O SH IB A MG300J2YS50 MG300 J 2 YS 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. â'¢ â'¢ â'¢ The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode High Speed : tf =0.30^8 (Max.) (I0=3OOA) trr=0.15/*s (Max.) (If = 300A) Low Saturation Voltage , Gate-Emitter Voltage Collector Current Forward Current SYMBOL VCES DC 1ms DC 1ms Collector Power -
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IGBT FZ 1200

Abstract: IGBT module FZ 1200 Manufacturer IGBT High Power Modules Type Vces lc IcRM VcEsat ton ts tf RthJC Tvj max outline V A A tp = , IGBT High-Power Module Type Range type current lc[A] 140x73mm Vce [V] 3300 140 x 130 mm module Vce [V] 600 1200 1600/1700 3300 140x190 mm m Vce [V] 600 j 1200 1600;1700 odule 2500 ! 3300 6-pack 150 200 300 400 600 800 ♦ ♦ ♦ : - . 4-pack 300 400 600 dualmodule 200 400 500 600 800 1200 O ♦ â'¢ â¡ â¡ â'¢ â¡ I â¡ o chopper-module 400 600 800 â¡ â¡ â  â¡ â¡ U
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igbt F4 400 R 12 KF4 IGBT FZ 600 IGBT module FZ 400 R12KF4 IGBT module FZ 140x190 F4-300 F4-400 00D2207

failure analysis IGBT

Abstract: The field stop IGBT FS IGBT robustness of the Trench/Field-Stop IGBT 3 chip two types of power modules for high and medium power , inhomogeneous with a Figure 2: eupec IGBT Power Modules for (a) High Power (1200V/3600A) and (b) Medium Power , 20V is included. In the IGBT High Power module 24 and in the IGBT Medium Power module 4 IGBT chips , of an eupec module for High Power applications (1200V/3600A), no failure. figure 4. The maximum , about the possibilities of the IGBT chip and the connection technology of the power module. Figure 7
Eupec
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The field stop IGBT FS IGBT infineon igbt 1200v 600A IGBT parallel power cycling eupec module igbt igbt 1200v 150a stop PCIM 176 D-81541
Abstract: T O SH IB A MG400J2YS50 MG400J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode High Speed : tf = 0.30//S (Max.) (Iq = 400A) trr = 0.15,«s (Max.) (Ip = 400A) Low Saturation , Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation Voltage -
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Abstract: T O SH IB A MG100Q1ZS40 MG1 00 Q 1 Z S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. â'¢ â'¢ High Input Impedance High Speed : tf=0.5/*s (Max.) trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.) Enhancement-Mode The Electrodes are Isolated from Case. â'¢ â'¢ â'¢ EQUIVALENT CIRCUIT E2 (B2 , Collector Current Forward Current DC 1ms DC 1ms Collector Power Dissipation (Tc = 25Â -
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Abstract: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT40M101 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. G T 4 0 M 1 01 U n it in mm 1S.8±0.5. 03.6±O.2 3-5 · · · · High Input Impedance H ig h sp e e d : tf= 0 .4 /^ s(M a x .) Low Satu ration Voltage : VQE(say = 3.4V (Max.) Enhancem ent-M ode MAXIMUM RATINGS (Ta = 25°C) CH A RACTERISTIC C ollector-Em itter Voltage G ate-E m itter Voltage r, , , . Collector O urient Collector Power Dissipation (Tc = 25°C) Jun -
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2-16F 01EAA2
Abstract: T O SH IB A MP6750 MP6750 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS â'¢ â'¢ â'¢ â'¢ The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage : v CE(sat) = 4-Ov (Max.) (Ic = 15A) High Speed : tf=0.35/^s (Max.) (I0 = 15A) trr=0.15/^s (Max.) (If = 15A) â , Gate-Emitter Voltage VCES DC ms DC Forward Current ms Collector Power Dissipation (Tc = 25Â -
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l200h

Abstract: GE 9018-2 Ordering number : EN9018 TIG110GMH SANYO Semiconductors DATA SHEET TIG110GMH Features · · · N-Channel Non Punch Through IGBT High Power High Speed Switching Applications , Collector Current (DC) Collector Current (Pulse) Allowable Power Dissipation Junction Temperature Storage , Collector-to-Emitter Voltage, VCE - V PD - Tc Allowable Power Dissipation, PD - W 40 60 80 100 IT16396 , equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives
SANYO Electric
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l200h GE 9018-2 SC-93 TIG110
Abstract: MG600J1US51 TOSHIBA M G 6 0 0 J 1 US51 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. â'¢ â'¢ â'¢ â'¢ The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : ^ = 0 .3 0 /^ (Max.) (I0 = 6OOA) trr = 0.15/d5 (Max.) (Ijr = 600A) Low Saturation Voltage : VCE (sat) = 2-70V (Max.) (IC , Voltage Gate-Emitter Voltage DC Collector Current 1ms DC Forward Current 1ms Collector Power -
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2-109E1A

IC46A

Abstract: Ordering number : EN9017 TIG111BF SANYO Semiconductors DATA SHEET TIG111BF Features · · · N-Channel Non Punch Through IGBT High Power High Speed Switching Applications , Collector Current (DC) Collector Current (Pulse) Allowable Power Dissipation Junction Temperature Storage , Collector-to-Emitter Voltage, VCE - V PD - Tc Allowable Power Dissipation, PD - W Gate-to-Emitter Voltage , system, safety equipment etc.) that shall require extremely high level of reliability and can directly
SANYO Electric
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IC46A TIG111 61511QJ TC-00002613

IC46A

Abstract: Ordering number : EN9014 TIG111GMH SANYO Semiconductors DATA SHEET TIG111GMH Features · · · N-Channel Non Punch Through IGBT High Power High Speed Switching Applications , Collector Current (DC) Collector Current (Pulse) Allowable Power Dissipation Junction Temperature Storage , Collector-to-Emitter Voltage, VCE - V PD - Tc Allowable Power Dissipation, PD - W Gate-to-Emitter Voltage , , transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of
SANYO Electric
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Abstract: Ordering number : EN9013A TIG110BF SANYO Semiconductors DATA SHEET TIG110BF Features · · · N-Channel Non Punch Through IGBT High Power High Speed Switching Applications , Collector Current (DC) Collector Current (Pulse) Allowable Power Dissipation Junction Temperature Storage , PD - Tc Allowable Power Dissipation, PD - W Gate-to-Emitter Voltage, VGE - V 12 VCC , extremely high level of reliability and can directly threaten human lives in case of failure or malfunction SANYO Electric
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IC46A

Abstract: EN9017A Ordering number : EN9017A TIG111BF SANYO Semiconductors DATA SHEET TIG111BF Features · · · N-Channel Non Punch Through IGBT High Power High Speed Switching Applications , Collector Current (DC) Collector Current (Pulse) Allowable Power Dissipation Junction Temperature Storage , PD - Tc Allowable Power Dissipation, PD - W Gate-to-Emitter Voltage, VGE - V 12 VCC , require extremely high level of reliability and can directly threaten human lives in case of failure or
SANYO Electric
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EN9013

Abstract: Ordering number : EN9013 TIG110BF SANYO Semiconductors DATA SHEET TIG110BF Features · · · N-Channel Non Punch Through IGBT High Power High Speed Switching Applications , Collector Current (DC) Collector Current (Pulse) Allowable Power Dissipation Junction Temperature Storage , PD - Tc Allowable Power Dissipation, PD - W Gate-to-Emitter Voltage, VGE - V 12 VCC , , transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of
SANYO Electric
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TC-00002612

BUSBAR calculation

Abstract: BUSBAR calculation datasheet with IGBT High Power Modules Dr.-Ing. Th. Schütze, eupec GmbH & Co KG, Warstein, Germany Abstract With regard to the blocking ability and efficiency of the new 3.3 kV IGBT high voltage modules (IHV , an inverter phase - consisting of high power modules as well as DC-capacitor, heat-sink and busbar - , with which rate-of-rise diode and anti-parallel IGBT must take over blocking voltage. High stray , the meantime. package circuit diagram application inverter Fig.5: High power module
Eupec
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BUSBAR calculation BUSBAR calculation datasheet calculation of IGBT snubber 3 level inverter 3 phase motor inverters circuit diagram igbt inductances types

FS450R12KE3 S1

Abstract: infineon pmb 6850 e semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes. Quality , . . . . . . . . . . . . . . . . . . . . . .4 IGBT High Power Modules . . . . . . . . . . . . . . . , content go to content IGBT High Power Modules 1200 VCES 1200 VCES Type *) Dual modules , Explanations 6 IGBT High Power Modules 1600 VCES Type *) Standard 2. Generation FF400R16KF4 , IGBT High Power Modules 2500+3300 VCES Type *) Dual modules IH4 IH7 Single modules Chopper
Eupec
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FS450R12KE3 S1 infineon pmb 6850 e HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 E-103

single phase dual output inverter with three switch legs

Abstract: single phase inverters circuit diagram Benefits of System-oriented IGBT Module Design for High Power Inverters LUNIEWSKI Piotr Benefits of System-oriented IGBT Module Design for High Power Inverters Piotr Luniewski, Uwe Jansen , .1 Benefits of System-oriented IGBT Module Design for High Power Inverters LUNIEWSKI Piotr Thermal , .2 Benefits of System-oriented IGBT Module Design for High Power Inverters LUNIEWSKI Piotr solution. At , .3 Benefits of System-oriented IGBT Module Design for High Power Inverters LUNIEWSKI Piotr Comparing
Infineon Technologies
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single phase dual output inverter with three switch legs single phase inverters circuit diagram solar inverters circuit diagram 1ED020I12-S inverter circuit using driver ic 2ED020I12-FI heatsink water FF1000R17IE4 2ED300C17-S FF1000R17IE4 PELINCEC2005 AN2004-06

FS20R06XE3

Abstract: aeg powerblock tt go to content go to content IGBT High Power Modules IHM 1200 VCES 1200 VCES Type , Stacks Outlines Accessories Explanations 22 IGBT High Power Modules IHM 1600 +1700 VCES , *) valid for all part-no: Tvj = 125°C, ICRM = 2xlC go to content go to content IGBT High Power , . transmission systems, high voltage power compensation. Power supply: Medical equipment, de-centralised power , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 High Power . . . . . . . . . . . . .
Eupec
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FS20R06XE3 aeg powerblock tt thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET MR 4710 IC 12F-1

SKiip 83 EC 125 T1

Abstract: SKiiP 82 AC 12 T1 Leistungshalbleitern zeigt Bild 0.6. Galvanic Isolation Control Unit Driver Power Semiconductor Devices (e.g. MOSFETs; IGBTs; Diodes) L INT L EXT A GI1 CEXT C INT Power Supply External , /IGCT-DISCS 3300 * 2500 IGBT-Modules (*: DISC 2,5 kV / 1,8 kA) 1700 103 Power MOSFETModules , immer bedeutsamer werden, so sind IGBT- und MOSFET-Module auch die Ausgangskomponenten für eine , IGBT 1.2.1 Aufbauvarianten und prinzipielle Funktion Bei den nachfolgend beschriebenen
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SKiip 83 EC 125 T1 SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1

vla531

Abstract: inverter welding machine circuit board IDC PRODUCTS for Power Electronics / Selection guide book IGBT IGBT drivers IGBT drivers , into the fields of high power/high reliability applications. Amount Fan motor Water pump , each products / Power Unit DCDC / DC DCDC / DCDC converter IGBT IGBT / IGBT driver -3- , power supply outside. And it has high reliability because it does not have optocoupler for signal , side is non isolated type) IGBT List of IGBT driver ( No power supply type ) Output Type
Isahaya Electronics
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vla531 inverter welding machine circuit board ups manufacturing transformer diagram 300w 24v dc motor speed controller 180v dc motor drive circuit diagram inverter 12v 220v with igbt

IGBT SKW30N60HS

Abstract: igbt 400V 20A 's : · The 600V High Speed IGBT is recommended for the high frequency power switching applications with , DuoPack With the High Speed IGBT Infineon offers a IGBT solution for high frequency power switching , High Speed IGBT 600V in NPT Technology for Welding Applications S. Cordes, L. Lorenz Infineon , power Electronic applications ­ the power switch - is still a semiconductor with high development , during the IGBT on state. In case that the Junction temperature rises ­ as a result of a high current ­
Infineon Technologies
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SGP04N60HS SKW30N60HS IGBT SKW30N60HS igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a TC100 SGP02N60HS SGP06N60HS SGP20N60HS SGW20N60HS

M57160L-01

Abstract: igbt module J2 mitsubishi generation of high power IGBT modules and present simplified implementations of the required circuits using , . INTRODUCTION In high power IGBT module applications it is usually desirable to use completely isolated gate , . (2) Capable of providing very high output currents for large IGBT modules. (3) Power circuit , REQUIREMENTS FOR HIGH POWER IGBT MODULES The main components of a typical gate drive circuit are illustrated , RG Input ISOLATION + VOFF G E E voltage, high current IGBT power circuit
Powerex
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M57160L-01 igbt module J2 mitsubishi m57160l-01 package m57962l schematic driver transistor modul M57160-01 1N5247 1N5256 D44VH10 D45VH10 PS2501 9DB-100

IGBT/MOSFET Gate Drive

Abstract: IGBT PNP POWER MOSFETS Coss = CGD + CDS The turn-on behavior of the IGBT is identical to the power MOSFET , -May-09 Application Note Vishay Semiconductors IGBT/MOSFET Gate Drive Optocoupler IGBT POWER DISSIPATION C The maximum switching frequency of an IGBT is limited by its power dissipation during switching. The , IGBT power losses during both turn-on and turn-off can be computed as follows: (3) ESW = ESW , NOTE IGBT SWITCHING POWER LOSSES Document Number: 81227 Rev. 1.2, 20-May-09 FWD Tj = TC +
Vishay Semiconductors
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IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter

AC Motor soft start IC

Abstract: HP3150 (IR) (Power Conversion Processor TM) IR HVIC 600V1200V IC · IGBT 3 · , Opto-Coupler Isolation Power Conversion Actuation Level 1: 1: 2: 2: 2 IGBT AC , PCB : IGBT IGBT IC 2 µsec 0.7 µsec 1:2 1:2 Switching Power , Low side gate Power Supply Linear current feedback 14a:IR2137 14a:IR2137 IGBT 12 , IR Power Conversion Processor TM AC BLDC IGBT/FRED HVIC EMI HVIC
International Rectifier
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IR2171 HP3150 AC Motor soft start IC hp3150v IR2271 DC regulator with IGBT BLDC IGBT IR2171IR2137 IR2137/IR2171
Abstract: Si IGBT power modules in high switching loss reduction of about 28% as compared to its silifrequency , development of the low loss, high current, high voltage, rugged power modules for high frequency power , switching frequencies >5 kHz. IGBT modules are the industry standard power semiconductor modules for various applications between the kW and MW power range [1]. In IGBT power modules, IGBTs are integrated , conventional Si IGBT power modules/ copacks. These two products, GA100XCP12-227 and GA35XCP12-247 (Fig. 1) are GeneSiC Semiconductor
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GA100XCP12

3 phase inverters circuit diagram igbt

Abstract: inverters circuit diagram igbt delay and switching times · High PWM carrier frequencies at minimised dynamic power losses of the IGBT , using a SCR or GTO as power switch, IGBT inverters are mainly meant to work at higher PWM frequencies. To operate the power stage at high PWM frequencies, the IGBT has to be switched as fast as possible , Dynamic Gate Controller (DGC) - A New IGBT Gate Unit for High Current / High Voltage IGBT Modules , well as to simplify the construction of complete IGBT power stages. The DGC concept is suitable for
Siemens
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3 phase inverters circuit diagram igbt inverters circuit diagram igbt controller for PWM with IGBT igbt dc to dc chopper control circuit diagram PWM igbt 200v dc motor igbt CH-2533

Electric Welding Machine diagram

Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET of discrete IGBT's : · The 600V High Speed IGBT is recommended for the high frequency power , Conclusion : With the High Speed IGBT Infineon offers a IGBT solution for high frequency power switching , the High Sped IGBT also becomes an interesting power switch for switch mode power supplies. 150 , High Speed 600V IGBT for fast switching Applications S. Cordes, H. Preis, L. Lorenz Infineon , applications ­ the power switch - is still a semiconductor with high development potential. Starting with
Infineon Technologies
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Electric Welding Machine diagram SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine SGP30N60HS SGW30N60HS SKW20N60HS

IR igbt gate driver ic

Abstract: IGBT PNP Power Minimal Minimal Large Medium Simple Simple High Large positive and negative , -947: Understanding HEXFET Switching Performance 3 3 3 3 IGBT High Efficiency IGBTs Rugged , ,(310)322-3331 AN-983AJ IGBT by A.Dubashi, S.Clemente, B. ly, G.Dokopoulos, Pel IR IGBT 1 MOSFET IGBT IR 2 IGBT GATE POLYSILICON OXIDE 3 IR 3 IGBT EMITTER IGBT AN-990AJ"IGBT N+ P- " N+ P+ rb rb
International Rectifier
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IR igbt gate driver ic 5A IGBT driver IC igbt 100V 5A mosfet ir 250 n irf 944 IRF MOSFET 10A P IRGBC20U IRG4BC40SIRG4BC40W IRF840LC 500V600V 1500C 160KH

single phase inverter IGBT

Abstract: wind inverter Least conduction loss High Voltage Power MOSFETs Fast, Soft Recovery Diodes · Power MOS 8TM , Input Power Conditioning Input Conditioning Requirements · Reduce magnetics size, cost ­ High , diode 600V Thunderbolt IGBT Switch ­ High voltage rated devices, up to 1200V 400V ­ 800V , ) / VCE(on) Typical Output Power (kW) APTCV50H60T3G Field Stop Trench IGBT / CoolMOS 600 , grade) IGBT is ideal · Two IGBTs switch at high frequency: tens of kHz ­ A low switching loss
Microsemi
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APT60N60BCSG single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter 50/60H 00E-07 00E-06 50E-06

AN9860

Abstract: excessively high. Selection of boost rectifiers for Power Factor Correction (PFC) and flyback topologies are , current. If the complimentary power switch turns-on very fast (i.e. the dif /dt is very high) the , very high and can virtually short the DC bus when the complimentary IGBT is rapidly turned on. This , combined with a high di/dt at turn-on and turn-off subjects the IGBT to a high stress environment. In , voltage and high current resulting in a period of high power dissipation. If the IRRM is high, the
Intersil
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AN9860 ISO9000

inverter welding machine circuit board

Abstract: ups manufacturing transformer diagram , refrigerators, etc.) and also into the fields of high power /high reliability applications. 1M POWER CLASSIFICATION (W) Cover area of each products IGBT gate drivers DCDC-DC converters Power Units ISAHAYA ELECTRONICS CORPORATION ( 2 / 23) Apr. 2010 Power Module Division IGBT drivers About IGBT driver b , microcomputer on activity of short circuit protection ( 4 / 23) Apr. 2010 Power Module Division IGBT , Gate power supply : VLA106 × 2 With short circuit protection Recommended IGBT modules MITSUBISHI NX
Isahaya Electronics
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CIRCUIT diagram welding inverter inverter new welding machine circuit dc motor speed control circuit diagram with IGBT welding rectifier circuit board IGBT inverter 12v 220v IGBT gate driver welding VLA303-01 VLA606-01R AC440V VLA106-15151 VLA106-24151 VLA106-15154

Mitsubishi IPM module

Abstract: igbt module testing PLANAR IGBT (2nd GEN.) 100 0 VCE 500mV/div Sep.1998 MITSUBISHI SEMICONDUCTORS POWER , IPM support technologies. Areas such as the trench IGBT power chip, the IC including the LSI , technologies is expected to enhance IPM growth in two directions: 1. Growth toward a high power/ high , required. In the high power area, the IPM technology is expected to grow extensively by combining MOS , 1000 SENSOR NEW GEN. HIGH POWER IPMs APPLICATIONS SYSTEM RATING (kW) 100 DRIVE &
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Mitsubishi IPM module igbt module testing mitsubishi semiconductors power modules mos trench power igbt IGBT 1500 mitsubishi electric igbt module

M57962L

Abstract: IGBT DRIVER SCHEMATIC chip single in-line hybrid ICs for driving IGBT modules. All four drivers are high speed devices designed , from the IGBT drive using high speed optocouplers with 15,000V/ms design by minimizing the number , hybrid IGBT gate drivers from low voltage DC power supplies that are isolated from the main DC bus voltage. Isolated power supplies are required for high side gate drivers because the emitter potential of high side IGBTs is constantly changing. Isolated power supplies are often desired for low side
Mitsubishi
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M57959L M57957L M57958L 1N6528 IGBT DRIVER SCHEMATIC chip IGBT DRIVER SCHEMATIC M57962L MITSUBISHI HYBRID small driver igbt motorola to-220 D44VH10/D45VH10 RF160A

M57962AL

Abstract: IPM Inverter IGBT gate drivers DC-DC converters Apr. 2010 PoWer Module Division ISAHAYA ELECTRONICS , series : MITSUBISHI high frequency switching IGBT modules < Up to 30kHz use > VCES IC 600V , ( 9 /30) Built-in power supply type IGBT driver "VLA500" B ilt i l t di OUTLINE DRAWING , ELECTRONICS CORPORATION http://www.idc-com.co.jp ( 10 /30) High isolation type IGBT driver "VLA500K" , FEATURES 29 VCC2 28 GND1 - It does not need opt-coupler. - Th power supply for high side gate d
Isahaya Electronics
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VLA503 VLA513 M57959AL M57962AL M57184N-516AF IPM Inverter VLA500-01R M57962 MITSUBISHI ipm MODULES ps VLA502 AC200V VLA31X VLA507

IXAN0063

Abstract: IGBT THEORY AND APPLICATIONS Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input , make use of the advantages of both Power MOSFET and BJT, the IGBT has been introduced. It's a , requiring high dynamic range control and low noise. It also can be used in Uninterruptible Power Supplies (UPS), Switched-Mode Power Supplies (SMPS), and other power circuits requiring high switch repetition , loss and low switching loss. The main advantages of IGBT over a Power MOSFET and a BJT are: 1. It has
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IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT transistor igbt Mohan power electronics converters applications a 2001I

mosfet base induction heat circuit

Abstract: power IGBT MOSFET GTO SCR diode Development of IGBT spurred revolution in high power electronics · Power transistor modules have decreased in , or metal housing. Diode / SCR / GTO / IGBT / MOSFET / BJT High Heat Flux Applications in Power , . (Semikron) PCIM Euro 2005 High Heat Flux Applications in Power Electronics 2005 26 IGBT Module , , 900A Mega Power Dual IGBT Module High Heat Flux Applications in Power Electronics 2005 36 , Power Systems Inc. · Discrete or module SCRs, Diodes · IGBT modules · Air or liquid cooled High
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mosfet base induction heat circuit power IGBT MOSFET GTO SCR diode mitsubishi sic MOSFET skiip 33 ups 063 IGCT mitsubishi Cree SiC MOSFET CVN-78

TLP250 MOSFET DRIVER application note

Abstract: TLP250 MOSFET DRIVER CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC's IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3 , Operation 36 1 May, 2005 S.Hashizume Rev. 1.01 POWER DEVICES and IGBT Diode is a fundamental , during the period when base current is supplied. 2 POWER DEVICES and IGBT MOSFET (Nch) iD iD , 8.0 V C G A measure of IGBT steady-state power dissipation, which refers to forward voltage
Nihon Inter Electronics
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TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER 74hc06 TLP250 igbt driver applications tlp250 equivalent TLP250 application note

igbt testing procedure

Abstract: IGBT Driver Power Schematic impedance; LOW = BOT switch off; HIGH = BOT switch on X10:09 PRIM_PWR_15P Drive core power supply , Switch on signal TOP IGBT X100:07 SEC_TOP_GND GND for power supply and GND for digital signals X100:08 SEC_TOP_IGBT_OFF Switch off signal TOP IGBT X100:09 SEC_TOP_8N Output power , IGBT X200:07 SEC_BOT_GND GND for power supply and GND for digital signals X200:08 SEC_BOT_IGBT_OFF Switch off signal BOT IGBT X200:09 SEC_BOT_8N Output power supply for external buffer
SEMIKRON
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L6100100 igbt testing procedure IGBT Driver Power Schematic skyper IGBT DRIVER SEMIKRON Semikron

IGBT 50 amp 1000 volt

Abstract: Cree SiC MOSFET instantaneous power of 15 kW is dissipated in the IGBT. Also shown are high frequency oscillations in the IGBT , switched, high voltage (greater than 500V) and high power (greater than 500 watts) applications. Typical , ) Figure 3. 600 volt SiC SBD turn-off voltage, current and instantaneous power at 150°C. V IGBT (volts , ) I IGBT (A) Power (kW) 20 700 Figure 5 shows the turn-on voltage, current and instantaneous power measured at a junction temperature of 150°C of the IGBT with a SiC SBD. The use of the SiC
Cree
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CPWR-AN03 IGBT 50 amp 1000 volt 24 volt 10 amp smps 12 VOLT 150 AMP smps circuit 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt

Application Note 91

Abstract: 81227 POWER MOSFETS VOLTAGE DRIVEN High at low voltage low at high voltage Very low IGBT SWITCHING BEHAVIOR , power consumption compared to a BJT. IGBTs are used for high current, high voltage applications when , CGS + CGD Crss = CGD Coss = CGD + CDS The turn-on behavior of the IGBT is identical to the power , Semiconductors IGBT/MOSFET Gate Drive Optocoupler IGBT POWER DISSIPATION The maximum switching frequency of an IGBT is limited by its power dissipation during switching. The junction temperature (Tj) during
Vishay Semiconductors
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Application Note 91 81227 IGBT gate driver ic optocoupler without base pin for mosfet driver what is fast IGBT transistor mosfet igbt gate driver ic

high frequency induction welding schematic

Abstract: MOSFET 1200v 3a turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial , in high power industrial applications such as medical, laser, telecommunication, induction heating , high cell density trench gate IGBT compared to the CSTBT. The key difference is the addition of the , example switching waveforms comparing the new high speed CSTBT to a standard IGBT module. These , chopper operation. The new optimized IGBT provides about a 60 % reduction in total power loss compared
Powerex
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high frequency induction welding schematic MOSFET 1200v 3a difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules igbt inverter schematic induction heating

APT0201

Abstract: 12 VOLT 10 AMP smps a conventional high voltage power MOSFET of the same die size and similar voltage rating, an IGBT , Power MOS 7 IGBT in a high frequency application, the same gate drive voltage may be used, even if it , (PT) IGBTs with power MOSFETs. Also included is a brief overview of the PT IGBT structure. Benefits , alternative to high voltage power MOSFETs under many conditions, sometimes with superior performance , gives an overview of PT IGBT technology, compares features and benefits with power MOSFETs, and shows
Advanced Power Technology
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APT0302 APT0201 APT0202 12 VOLT 10 AMP smps mosfet 300 volt 12 VOLT 100 AMP smps high current IGBT based buck converter INT990

mosfet base induction heat circuit

Abstract: mitsubishi induction traction motor "power cycle" test. In this test short (~1s) high power pulses are used to rapidly heat the IGBT chip , preferred power semiconductor device for a wide range of industrial applications. During this time IGBT , The power cycling capability of an IGBT module is normally limited by either emitter wire bond , al. "A New Generation High Speed Low Loss IGBT Module", ISPSD, May 1992 [2] J Yamashita, et al. "A , , 1994 [9] E. Motto, et. al., "Evaluating the Dynamic Performance of High Current IGBT Modules" PCIM/PQ
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mitsubishi induction traction motor POWEREX igbtmod Igbt base induction heat circuit igbt for HIGH POWER induction heating ieee 1000 igbtmod mitsubishi

tyco igbt module

Abstract: igbt power module tyco groups of the F3L020E07-F-P_EVAL evaluation boardâ'™s top side. 1: Connectors outer high side IGBT 2: Connectors inner high side IGBT 3: Connectors inner low side IGBT 4: Connectors outer low side IGBT 5: Power side outer high side IGBT 6: Power side inner high side IGBT 7: Power side inner low side IGBT 8: Power side outer low side IGBT 9: Logic connector 10: Power supply connector 11: Temperature , bar. - Bipolar power supply of the driverâ'™s secondary side with +15V/-8V - Isolated IGBT
Infineon Technologies
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tyco igbt module igbt power module tyco AN2011-03 1ED020I12-F MA3L080E07 AN2009-10 AN2011-04

VLA500K-01R

Abstract: Igbt 15kV 600A Release Date: 3-4-09 1.0 Driving IGBT Modules When using high power IGBT modules, it is , cycle. (2) Easily adapted to provide very high output currents for large IGBT modules. (3) Power circuit switching noise and high voltages are isolated from control circuits. (4) Local power is , , short circuit protection, and isolated power for efficient reliable operation of Powerex IGBT modules , Converters Power is usually supplied to hybrid IGBT gate drivers from low voltage DC power supplies that are
Powerex
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VLA500K-01R Igbt 15kV 600A IGBT Drivers Transistors desaturation igbt driver schematic desaturation design VLA500-01 2500VRMS 3750VRMS

full bridge igbt induction heating generator

Abstract: transistor x112 MOSFET Discreets RF Power MOSFETs IGBT Discreets >>> IGBT Modules Ultra Fast Rectifiers Silicon , E D R I V E R S MOSFET and IGBT Gate Drivers RF Power MOSFETs PWM Controllers FUNCTIONAL , having over 120 patents and innovations in the development of the IGBTs, High Current Power MOSFETs , , Westcode for high power bipolar products, Clare and Micronix for Mixed Signal ICs and ASICs, MwT for GaAs , medium to high power devices, mixed signal ICs, optoelectronic and RF semiconductors, keeping the
IXYS
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full bridge igbt induction heating generator transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR D-68623 N1016

IGBT tail time

Abstract: igbt simulation punch through IGBT for high voltage and high current applications," in Proc. Int. Symp. Power , because the NPT IGBT has neither lifetime high buffer layer. On the other hand, the PT IGBT, control , tolerance becomes high. Therefore, the destruction tolerance of the PT IGBT could be increased by , a high breakover voltage for the IGBT that has a thin drift layer. 4) The lifetime control should , (1), high breakover voltage can be attained. The new IGBT with the -buffer layer that is formed
Powerex
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IGBT tail time igbt simulation NATIONAL IGBT local lifetime mitsubishi igbt cm Semiconductor Group igbt

step down chopper

Abstract: igbt 6.5 kv snubber HIGH VOLTAGE IGBT MODULES IN THE DESIGN OF A 3KV CHOPPER Alexis Colasse, Jean-Emmanuel Masselus , basic power module with 3.3 kV IGBT 3.2. Number of gate-driver needed To design a basic power module , 3.3kV IGBT 3.1.2. A basic power module with 6.5 kV IGBT LI ² 6. 5 kV = LI ²3 .3 kV 4 (3) To , ) fig. 8 : a basic power module with 6.5kV IGBT Conclusion : The CV² of the 6.5 kV IGBT solution is , serial connection. Moreover, the power module designed with 6.5 kV IGBT doesn't require any snubber, it
EPCOS
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step down chopper igbt 6.5 kv snubber step down chopper using igbt APPLICATIONS OF dc chopper circuit dc to dc chopper using igbt dc to dc chopper by thyristor
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