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HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station visit Texas Instruments
POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
SOLARMAGIC-SOLARPOWEROPTIMIZER-REF Texas Instruments SolarMagic SM3320-RF-EV Solar Power Optimizer with RF Communications Reference Design visit Texas Instruments
POE-PD-POWER-REF Texas Instruments LM5072 5V out 25W IEEE 802.3at Compliant POE+ PD Power Reference Design visit Texas Instruments
UC2727QP Texas Instruments Isolated High Side IGBT Driver 28-PLCC -40 to 85 visit Texas Instruments
UC3727DWP Texas Instruments Isolated High Side IGBT Driver 28-SOIC 0 to 70 visit Texas Instruments

igbt high power

Catalog Datasheet MFG & Type PDF Document Tags

hvdc

Abstract: thyristor power the Home News Addresses Editorials Products Company .Core Search future Site Content Help Competence Application: Products: Motor Drives Traction Electrical Vehicles HVDC Transmission Power Supply Medical Equipment Wind Power Inductice Heating Welding IGBT Modules IGBT High Power Modules IGBT High Voltage Modules Power Integrated Modules PIM , F-Thyristor discs N-Diode discs Fast switching Diode discs IGBT Stacks and Drivers Stacks with Thyristors
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Thyristor catalog

Abstract: MOSFET Modules . . Home Products News Contact Editorials Job Offers Company Search power Site Content the future Short Form Catalog click to select data table - then click on outline for drawing Modules IGBT High Power Modules IGBT Standard Modules Mosfet Modules Power Integrated Modules PIM Phase Control , Attachements for Modules Heatsinks (see Stack Datasheets) IGBT Stacks & Driver Letter Symbols Type Designation Contact Schottky Rectifier Diodes Rectifier Diode Bridges Low Power Diodes Terms of delivery Eupec
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EUPEC

Abstract: eupec igbt conductor products, including IGBT high power and standard modules, thyristors and diodes. delivery , . Power (W) 100M eupec Product Range lî H Util II li ; e 10M SCR + Diode phase control ß Ü
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BSM50GD120DN2E3226

Abstract: FF300R12KE3 IGBT High Power Modules 1200 VCES 1200 VCES Type *) Dual modules IH1/4 IH7 , Explanations 6 IGBT High Power Modules 1600 VCES Type *) Standard 2. Generation FF400R16KF4 , IH2/60 IH2/60 *) valid for all part-no: Tvj = 125°C, ICRM = 2xlC IGBT High Power Modules , Explanations 8 IGBT High Power Modules 6500 VCES Type *) Standard FZ200R65KF1 FZ400R65KF1 , : Tvj = 125°C, ICRM = 2xlC 5 IGBT SCR / Diode Modules Presspacks Stacks Outlines
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FF600R12KE3 FZ1600R12KF4 BSM50GD120DN2E3226 FF300R12KE3 bsm25gp120 b2 FZ1200R16KF4 FF400R33KF2 FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C

MG25N2YS1

Abstract: t100a GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance . High Speed : tf=1. Ous (Max.) trr=0.5ys(Max.) MG25N2YS1 . Enhancement-Mode . Includes a Complete Half Bridge in one Package. . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT Weight : 222g (Bl) (B2) MAXIMUM RATINGS (Ta=25°C) SYMBOL VCES vges , Collector Power Dissipation Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque
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t100a LF25A A 222G mg25n2

igbt high power

Abstract: MG75N1BS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance . High Speed : tf=1.0iis(Max.) . Low Saturation Voltage : VcE(sat) = 5.0V(Max.) . Enhancement-Mode . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT a(B)o- Weight : 90g ÒE MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Collector Power Dissipation (Tc=25°C) Junction Temperature Storage
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MG75N1BS1 igbt high power

EUPEC Thyristor

Abstract: thyristoren Content eupec Presentation Terms of Delivery High Power Components IGBT High Power Modules IGBT , Fast Rectifier Diodes Avalanche Rectifier Diodes Insulated Cellss Low Power Components Schottky Rectifier Diodes Rectifier Diode Bridges Low Power Diodes Accessories Clamping Force Clamping Devices Gate Leads Heatsinks Drivers for IGBT & Power Mosfet IGBT Stacks & Driver Explanations Letter Symbols Type , Power Mosfet IGBT Baugruppen und Treiber Erläuterungen Kurzzeichen Typenbezeichnungen
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EUPEC Thyristor thyristoren Eupec thyristors catalog MOSFET Modules mosfet catalog IGBT EUPEC

BSM25GP120 b2

Abstract: BSM50GD120DN2E3226 IS14/69 kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 15 IGBT High Power Modules , IGBT High Power Modules 1600+1700 VCES Type *) Dual modules IH1 IH7 Single modules , Explanations 18 IGBT High Power Modules 6500 VCES Type *) Standard FZ200R65KF1 FZ400R65KF1 , -2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 9 Power Integrated Modules PIM 600 VCES Type VCES V IGBT Inverter , High Power Modules 2500+3300 VCES Type *) Standard FF200R33KF2 FF400R33KF2 FF500R25KF1
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FB10R06VL4 FP15R12YT3 BSM15GP120 b2 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FB6R06VL4 FB10R06KL4 FB10R06KL4G FP10R06KL4 FB15R06KL4

MG240V1US41

Abstract: DIODE i2t TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG240V1US41 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: tf = 1.5us (Max.) (IC = 240A) trr = 0.6us (Max.) (IF = 240A) · Enhancement , V DC IC 240 1ms ICP 480 DC IF 240 1ms IFM 480 Collector Power , with us before you use these TOSHIBA products in equipments which require high quality and/or
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DIODE i2t PW04540796

mg300* toshiba

Abstract: 300AVGE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.30us (Max.) (IC = 300A) trr = 0.15us (Max.) (IF = 300A) VCE , 600 Collector Power Dissipation (Tc = 25°C) PC 1300 W Junction Temperature Tj , with us before you use these TOSHIBA products in equipments which require high quality and/or
Toshiba
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mg300* toshiba 300AVGE TOSHIBA MG300J2YS50 PW03190796

igbt 25A toshiba

Abstract: MG25Q6ES42 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.5us (Max.) trr = 0.5us (Max.) · Low saturation voltage: VCE , 50 Collector Power Dissipation (Tc = 25°C) PC 200 W Junction Temperature Tj 150 , use these TOSHIBA products in equipments which require high quality and/or reliability, and in
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igbt 25A toshiba Toshiba transistor Ic 100A PW03810796

MG200H2YS1

Abstract: GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.Ovs(Max.) trr=0. 5(is(Max.) . Low Saturation Voltage : VcE(sat)=5.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One Package. . The Electrodes are Isolated from Case. MG200H2YS1 Unit in mm EQUIVALENT CIRCUIT El Q Clo~ -O0 01 ÍB1 , Voltage Gate-Eraitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation
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MP6750

Abstract: toshiba mp6750 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6750 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.35us (Max.) (IC = 15A) trr = 0.15us (Max.) (IC = 15A) · Low , 30 DC IF 15 1ms IFM 30 Collector Power Dissipation (Tc = 25°C) PC 55 W , equipments which require high quality and/or reliability, and in equipments which could have major impact to
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toshiba mp6750 toshiba motor PW03010796

MG300J2YS40

Abstract: TRANSISTOR bu 406 MÃ300J2YS40 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. , High Inputâ Impedance . High Speed : tf=0.35us (Max,) trr=0.15tis (Max.) . Low Saturation Voltage : VCF.(sat) = 3-5V (Max.) . Enahncement-Mode . Includes a Complete Half Bridge in One Package . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT El O Cl E2 o o E2 0 o 1 El /C2 G2 , 600 Forward Current DC IF 300 A 1ms TFM 600 Collector Power Dissipation (Tc=25°C) Pc 1200 W
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MG300J2YS40 TRANSISTOR bu 406 MG300J2YS40 igbt 28106 008j CL 6503 U-15V

FS300R12OE4P

Abstract: FP06R12W1T4 , on our website www.infineon.com/highpower, these links are active. IGBT High Power Wir bieten , manufacturing. IGBT Low Power Hochleistungshalbleiter für Ihre Industrieanwendungen High power , Links2.22 IGBT Modules - High Power Overview IGBT 3.1 3.2 Overview Module Systems 4.2 MIPAQTM4 , VII IGBT Medium Power IGBT Low Power IGBT High Power Module Systems IGBT Medium Power , Short Form Catalog 2012 High Power Semiconductors for Industrial Applications
Infineon Technologies
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FS300R12OE4P FP06R12W1T4 FS450R12OE4P F3L400R12PT4 bt 1690 scr FF150R12RT4 B133-H9378-G3-X-7600

1287-standard

Abstract: SiC IGBT High Power Modules during the introduction of IGBT high power modules. 10.000.000 IHV (traction) Since their market introduction in the beginning of 1995, eupec IGBT high power modules (IHM) got a quick access to , Bonding A high power IGBT module comprises approx. 450 wires together with 900 wedge bonds. For many , . Lefranc, R. Spanke, ,Multichip high power IGBT modules for traction and industrial applications," , bond contact. Test results of short time power cycling on IGBT modules with up to 24 paralleled IGBT
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1287-standard SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit

MG150J2YS50

Abstract: mg150j2y TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG150J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.30us (Max.) (IC = 150A) trr = 0.15us (Max.) (IF = 150A) VCE , 300 Collector Power Dissipation (Tc = 25°C) PC 780 W Junction Temperature Tj 150 , use these TOSHIBA products in equipments which require high quality and/or reliability, and in
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mg150j2y PW03160796

MG75J2YS50

Abstract: Toshiba transistor Ic 100A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: tf = 0.30us (Max.) (IC = 75A) trr = 0.15us (Max.) (IF = 75A) · Enhancement mode , Collector Power Dissipation (Tc = 25°C) PC 390 W Junction Temperature Tj 150 °C , use these TOSHIBA products in equipments which require high quality and/or reliability, and in
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toshiba mg75j2ys50 diode bridge toshiba PW03100796
Abstract: TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS GT15Q301 GT15Q301 The 3rd Generation Enhancement-Mode High Speed : tf=0.40/.iS (Max.) Low Saturation Voltage : V q e (sat) = 3.5V (Max.) FRD included , Gate-Emitter Voltage Collector Current Emitter-Collector Forward Current Collector Power Dissipation (Tc = 25 , Reverse Recovery Time - - : 300 ns trr Thermal Resistance (IGBT) - ; 0.69 °C /W - - R t h (j-c) - -
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961001EAA1

igbt 25A toshiba

Abstract: MG25Q2YS40 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.5us (Max.) trr = 0.5us (Max.) VCE (sat)= 4.0V (Max.) Low , ICP 50 DC IF 25 1ms IFM 50 Collector Power Dissipation (Tc = 25°C) PC , equipments which require high quality and/or reliability, and in equipments which could have major impact to
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Toshiba bridge diode TOSHIBA IGBT toshiba power module PW03790796
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