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HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station
POWEREST Texas Instruments Power Estimation Tool (PET)
SOLARMAGIC-SOLARPOWEROPTIMIZER-REF Texas Instruments SolarMagic SM3320-RF-EV Solar Power Optimizer with RF Communications Reference Design
MSP430-3P-PCC-LIFETIMEPOWEREVALDEVKT Texas Instruments Lifetime Power? Evaluation and Development Kit
POE-PD-POWER-REF Texas Instruments LM5072 5V out 25W IEEE 802.3at Compliant POE+ PD Power Reference Design
RI-UHF-IC116-00 Texas Instruments PACKAGED UHF IC FOR PCB TRACKING APPLICATION 6-USON -40 TO 125

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igbt high power

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: power the Home News Addresses Editorials Products Company .Core Search future Site Content Help Competence Application: Products: Motor Drives Traction Electrical Vehicles HVDC Transmission Power Supply Medical Equipment Wind Power Inductice Heating Welding IGBT Modules IGBT High Power Modules IGBT High Voltage Modules Power Integrated Modules PIM , F-Thyristor discs N-Diode discs Fast switching Diode discs IGBT Stacks and Drivers Stacks with Thyristors Eupec
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hvdc welding rectifier thyristor MOSFET IGBT RECTIFIER igbt bridge switching power supply thyristor DATASHEET
Abstract: . . Home Products News Contact Editorials Job Offers Company Search power Site Content the future Short Form Catalog click to select data table - then click on outline for drawing Modules IGBT High Power Modules IGBT Standard Modules Mosfet Modules Power Integrated Modules PIM Phase Control , Attachements for Modules Heatsinks (see Stack Datasheets) IGBT Stacks & Driver Letter Symbols Type Designation Contact Schottky Rectifier Diodes Rectifier Diode Bridges Low Power Diodes Terms of delivery Eupec Eupec
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Thyristor catalog MOSFET Modules Thyristors high current thyristor driver thyristor modules asymmetric thyristor
Abstract: conductor products, including IGBT high power and standard modules, thyristors and diodes. delivery , . Power (W) 100M eupec Product Range lî H Util II li ; e 10M SCR + Diode phase control ß Ü -
OCR Scan
EUPEC eupec igbt IGBT EUPEC
Abstract: IGBT High Power Modules 1200 VCES 1200 VCES Type *) Dual modules IH1/4 IH7 , Explanations 6 IGBT High Power Modules 1600 VCES Type *) Standard 2. Generation FF400R16KF4 , IH2/60 IH2/60 *) valid for all part-no: Tvj = 125°C, ICRM = 2xlC IGBT High Power Modules , Explanations 8 IGBT High Power Modules 6500 VCES Type *) Standard FZ200R65KF1 FZ400R65KF1 , : Tvj = 125°C, ICRM = 2xlC 5 IGBT SCR / Diode Modules Presspacks Stacks Outlines Eupec
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FF600R12KE3 FZ1600R12KF4 FF300R12KE3 BSM50GD120DN2E3226 bsm25gp120 b2 FF400R33KF2 FZ1200R16KF4 FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C
Abstract: GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance . High Speed : tf=1. Ous (Max.) trr=0.5ys(Max.) MG25N2YS1 . Enhancement-Mode . Includes a Complete Half Bridge in one Package. . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT Weight : 222g (Bl) (B2) MAXIMUM RATINGS (Ta=25°C) SYMBOL VCES vges , Collector Power Dissipation Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque -
OCR Scan
t100a A 222G LF25A mg25n2
Abstract: GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance . High Speed : tf=1.0iis(Max.) . Low Saturation Voltage : VcE(sat) = 5.0V(Max.) . Enhancement-Mode . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT a(B)o- Weight : 90g ÒE MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Collector Power Dissipation (Tc=25°C) Junction Temperature Storage -
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MG75N1BS1
Abstract: Content eupec Presentation Terms of Delivery High Power Components IGBT High Power Modules IGBT , Fast Rectifier Diodes Avalanche Rectifier Diodes Insulated Cellss Low Power Components Schottky Rectifier Diodes Rectifier Diode Bridges Low Power Diodes Accessories Clamping Force Clamping Devices Gate Leads Heatsinks Drivers for IGBT & Power Mosfet IGBT Stacks & Driver Explanations Letter Symbols Type , Power Mosfet IGBT Baugruppen und Treiber Erläuterungen Kurzzeichen Typenbezeichnungen -
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EUPEC Thyristor thyristoren Eupec thyristors catalog mosfet catalog EUPEC Thyristor fast igbt catalog
Abstract: IS14/69 kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 15 IGBT High Power Modules , IGBT High Power Modules 1600+1700 VCES Type *) Dual modules IH1 IH7 Single modules , Explanations 18 IGBT High Power Modules 6500 VCES Type *) Standard FZ200R65KF1 FZ400R65KF1 , -2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 9 Power Integrated Modules PIM 600 VCES Type VCES V IGBT Inverter , High Power Modules 2500+3300 VCES Type *) Standard FF200R33KF2 FF400R33KF2 FF500R25KF1 Eupec
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FB10R06VL4 FP15R12YT3 BSM15GP120 b2 FS10R06VL4_B2 BSM35GP120 FS10R06VL4 F4-150R12KS4 BSM30GD60DLCE3224 FB6R06VL4 FB10R06KL4 FB10R06KL4G FP10R06KL4 FB15R06KL4
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG240V1US41 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: tf = 1.5us (Max.) (IC = 240A) trr = 0.6us (Max.) (IF = 240A) · Enhancement , V DC IC 240 1ms ICP 480 DC IF 240 1ms IFM 480 Collector Power , with us before you use these TOSHIBA products in equipments which require high quality and/or Toshiba
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DIODE i2t PW04540796
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.30us (Max.) (IC = 300A) trr = 0.15us (Max.) (IF = 300A) VCE , 600 Collector Power Dissipation (Tc = 25°C) PC 1300 W Junction Temperature Tj , with us before you use these TOSHIBA products in equipments which require high quality and/or Toshiba
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mg300* toshiba 300AVGE TOSHIBA MG300J2YS50 PW03190796
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.5us (Max.) trr = 0.5us (Max.) · Low saturation voltage: VCE , 50 Collector Power Dissipation (Tc = 25°C) PC 200 W Junction Temperature Tj 150 , use these TOSHIBA products in equipments which require high quality and/or reliability, and in Toshiba
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igbt 25A toshiba Toshiba transistor Ic 100A PW03810796
Abstract: GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.Ovs(Max.) trr=0. 5(is(Max.) . Low Saturation Voltage : VcE(sat)=5.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One Package. . The Electrodes are Isolated from Case. MG200H2YS1 Unit in mm EQUIVALENT CIRCUIT El Q Clo~ -O0 01 ÍB1 , Voltage Gate-Eraitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation -
OCR Scan
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6750 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.35us (Max.) (IC = 15A) trr = 0.15us (Max.) (IC = 15A) · Low , 30 DC IF 15 1ms IFM 30 Collector Power Dissipation (Tc = 25°C) PC 55 W , equipments which require high quality and/or reliability, and in equipments which could have major impact to Toshiba
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toshiba mp6750 toshiba motor PW03010796
Abstract: MÃ300J2YS40 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. , High Inputâ Impedance . High Speed : tf=0.35us (Max,) trr=0.15tis (Max.) . Low Saturation Voltage : VCF.(sat) = 3-5V (Max.) . Enahncement-Mode . Includes a Complete Half Bridge in One Package . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT El O Cl E2 o o E2 0 o 1 El /C2 G2 , 600 Forward Current DC IF 300 A 1ms TFM 600 Collector Power Dissipation (Tc=25°C) Pc 1200 W -
OCR Scan
MG300J2YS40 TRANSISTOR bu 406 008j 28106 CL 6503 MG300J2YS40 igbt U-15V
Abstract: , on our website www.infineon.com/highpower, these links are active. IGBT High Power Wir bieten , manufacturing. IGBT Low Power Hochleistungshalbleiter für Ihre Industrieanwendungen High power , Links2.22 IGBT Modules - High Power Overview IGBT 3.1 3.2 Overview Module Systems 4.2 MIPAQTM4 , VII IGBT Medium Power IGBT Low Power IGBT High Power Module Systems IGBT Medium Power , Short Form Catalog 2012 High Power Semiconductors for Industrial Applications Infineon Technologies
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FS300R12OE4P FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr Dz800S17ke3 B133-H9378-G3-X-7600
Abstract: during the introduction of IGBT high power modules. 10.000.000 IHV (traction) Since their market introduction in the beginning of 1995, eupec IGBT high power modules (IHM) got a quick access to , Bonding A high power IGBT module comprises approx. 450 wires together with 900 wedge bonds. For many , . Lefranc, R. Spanke, ,Multichip high power IGBT modules for traction and industrial applications," , bond contact. Test results of short time power cycling on IGBT modules with up to 24 paralleled IGBT Eupec
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1287-standard SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 HIGH VOLTAGE DIODE 3.3kv
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG150J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.30us (Max.) (IC = 150A) trr = 0.15us (Max.) (IF = 150A) VCE , 300 Collector Power Dissipation (Tc = 25°C) PC 780 W Junction Temperature Tj 150 , use these TOSHIBA products in equipments which require high quality and/or reliability, and in Toshiba
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mg150j2y PW03160796
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: tf = 0.30us (Max.) (IC = 75A) trr = 0.15us (Max.) (IF = 75A) · Enhancement mode , Collector Power Dissipation (Tc = 25°C) PC 390 W Junction Temperature Tj 150 °C , use these TOSHIBA products in equipments which require high quality and/or reliability, and in Toshiba
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diode bridge toshiba toshiba mg75j2ys50 PW03100796
Abstract: TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS GT15Q301 GT15Q301 The 3rd Generation Enhancement-Mode High Speed : tf=0.40/.iS (Max.) Low Saturation Voltage : V q e (sat) = 3.5V (Max.) FRD included , Gate-Emitter Voltage Collector Current Emitter-Collector Forward Current Collector Power Dissipation (Tc = 25 , Reverse Recovery Time - - : 300 ns trr Thermal Resistance (IGBT) - ; 0.69 °C /W - - R t h (j-c) - -
OCR Scan
961001EAA1
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.5us (Max.) trr = 0.5us (Max.) VCE (sat)= 4.0V (Max.) Low , ICP 50 DC IF 25 1ms IFM 50 Collector Power Dissipation (Tc = 25°C) PC , equipments which require high quality and/or reliability, and in equipments which could have major impact to Toshiba
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Toshiba bridge diode TOSHIBA IGBT toshiba power module PW03790796
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