NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| BLF574,112 | NXP Semiconductors | HF / VHF power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack | 
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| BLF571,112 | NXP Semiconductors | HF / VHF power LDMOS transistor, SOT467C Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
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| BLF573S,112 | NXP Semiconductors | HF / VHF power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
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| BLF879P,112 | NXP Semiconductors | UHF power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
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| BLF871S,112 | NXP Semiconductors | UHF power LDMOS transistor, SOT467B Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: power the Home News Addresses Editorials Products Company .Core Search future Site Content Help Competence Application: Products: Motor Drives Traction Electrical Vehicles HVDC Transmission Power Supply Medical Equipment Wind Power Inductice Heating Welding IGBT Modules IGBT High Power Modules IGBT High Voltage Modules Power Integrated Modules PIM , discs N-Diode discs Fast switching Diode discs IGBT Stacks and Drivers Stacks with Thyristors and ... | Original |
1 pages, |
ac igbt high power igbt controller igbt igbt bridge switching power supply igbt controller igbt driver igbt welding modules igbt MOSFET IGBT RECTIFIER thyristor DATASHEET BRIDGE-RECTIFIER thyristor welding rectifier datasheet abstract |
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| Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS40 MG25Q2YS40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.5us (Max.) trr = 0.5us (Max.) VCE (sat)= 4.0V (Max.) Low , ICP 50 DC IF 25 1ms IFM 50 Collector Power Dissipation (Tc = 25°C) PC , equipments which require high quality and/or reliability, and in equipments which could have major impact to ... | Original |
5 pages, |
toshiba power module TOSHIBA IGBT igbt 25A toshiba diode bridge toshiba MG25Q2YS40 MG25Q2YS40 abstract |
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| Abstract: MÃœ300J2YS40 300J2YS40 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. , High Inputâ- Impedance . High Speed : tf=0.35us (Max,) trr=0.15tis (Max.) . Low Saturation Voltage : VCF.(sat) = 3-5V (Max.) . Enahncement-Mode . Includes a Complete Half Bridge in One Package . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT El O Cl E2 o o E2 0 o 1 El /C2 G2 (BU (B2 , DC IF 300 A 1ms TFM 600 Collector Power Dissipation (Tc=25°C) Pc 1200 W Junction Temperature ... | OCR Scan |
2 pages, |
MU300 MG300J2YS40 igbt MG300J2YS40 300J2YS40 300J2YS40 abstract |
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| Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 MP6752 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.35us (Max.) (IC = 20A) trr = 0.15us (Max.) (IC = 20A) · Low , 40 DC IF 20 1ms IFM 40 Collector Power Dissipation (Tc = 25°C) PC 60 W , equipments which require high quality and/or reliability, and in equipments which could have major impact to ... | Original |
5 pages, |
P channel 600v 20a IGBT equivalent MP6752 MP6752 MP6752 abstract |
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| Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q6ES42 MG25Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.5us (Max.) trr = 0.5us (Max.) · Low saturation voltage: VCE , 50 Collector Power Dissipation (Tc = 25°C) PC 200 W Junction Temperature Tj 150 , with us before you use these TOSHIBA products in equipments which require high quality and/or ... | Original |
5 pages, |
MG25Q6ES42 igbt 25A toshiba MG25Q6ES42 abstract |
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| Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6750 MP6750 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.35us (Max.) (IC = 15A) trr = 0.15us (Max.) (IC = 15A) · Low , 30 DC IF 15 1ms IFM 30 Collector Power Dissipation (Tc = 25°C) PC 55 W , equipments which require high quality and/or reliability, and in equipments which could have major impact to ... | Original |
5 pages, |
toshiba mp6750 MP6750 MP6750 abstract |
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| Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG15Q6ES42 MG15Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.5us (Max.) trr = 0.5us (Max.) · Low saturation voltage: VCE , 30 Collector Power Dissipation PC 125 W Junction Temperature Tj 150 °C , use these TOSHIBA products in equipments which require high quality and/or reliability, and in ... | Original |
5 pages, |
MG15Q6ES42 DIODE i2t MG15Q6ES42 abstract |
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| Abstract: TOSHIBA MG900GXH1US53 MG900GXH1US53 TOSHIBA IGBT (TENTATIVE DATA) MODULE MG900GXH1US53 MG900GXH1US53 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features · High Input Impedance · Enhancement Mode · Electrodes are Isolated from Case EQUIVALENT CIRCUIT MAXIMUM RATINGS , ICP 1800 (NOTE.2) A IFSM 6600 A Collector Power Dissipation(Tc=25degC) PC , high quality and/or reliability or a malfunction or failure of which may cause loss of human life or ... | Original |
4 pages, |
diode 900A 4 kw Toshiba AC motor MG900GXH1US53 800 kw Toshiba AC motor TOSHIBA IGBT MG900GXH1US53 abstract |
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| Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG150J2YS50 MG150J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.30us (Max.) (IC = 150A) trr = 0.15us (Max.) (IF = 150A) VCE , 300 Collector Power Dissipation (Tc = 25°C) PC 780 W Junction Temperature Tj 150 , use these TOSHIBA products in equipments which require high quality and/or reliability, and in ... | Original |
6 pages, |
MG150J2YS50 mg150j2y MG150J2YS50 abstract |
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| Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75J2YS50 MG75J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: tf = 0.30us (Max.) (IC = 75A) trr = 0.15us (Max.) (IF = 75A) · Enhancement mode , Collector Power Dissipation (Tc = 25°C) PC 390 W Junction Temperature Tj 150 °C , use these TOSHIBA products in equipments which require high quality and/or reliability, and in ... | Original |
6 pages, |
MG75J2YS50 diode bridge toshiba MG75J2YS50 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| ARCHIVES Heat Sink Specification for IGBT Modules ARCHIVES IGBT High Power Modules ARCHIVES Mounting of the IGBT-High-Power-Modules 140x190mm ARCHIVES Mounting of the IGBT-High-Power-Modules 140x130mm ARCHIVES How is the nominal current IC for IHM/IHV IGBT www.datasheetarchive.com/files/eupec/de/2_products/2_5_applicationsnotes/de_2_5_003.htm |
eupec | 20/04/2004 | 28.32 Kb | HTM | de_2_5_003.htm |
| ARCHIVES Heat Sink Specification for IGBT Modules ARCHIVES IGBT High Power Modules ARCHIVES Mounting of the IGBT-High-Power-Modules 140x190mm ARCHIVES Mounting of the IGBT-High-Power-Modules 140x130mm ARCHIVES How is the nominal current IC for IHM/IHV IGBT www.datasheetarchive.com/files/eupec/gb/2_products/2_5_applicationsnotes/gb_2_5_003.htm |
eupec | 20/04/2004 | 28.53 Kb | HTM | gb_2_5_003.htm |
| 1700V IGBT High Power Modules eupec's new 1700V Trench . MAY 2003 High Power IGBT Driver Solution offers high for driving IGBT and Mosfet power stages up to 1200V breakdown voltage . MAY 2003 eupec is introducing its new 3300V High Power 3300V High Power Module family is now being offered with a new diode and the www.datasheetarchive.com/files/eupec/de/2_products/2_2_applications (in planung)/de_2_5_001.htm |
eupec | 05/04/2004 | 13.11 Kb | HTM | de_2_5_001.htm |
| 1700V IGBT High Power Modules eupec's new 1700V Trench . MAY 2003 High Power IGBT Driver Solution offers high for driving IGBT and Mosfet power stages up to 1200V breakdown voltage . MAY 2003 eupec is introducing its new 3300V High Power 3300V High Power Module family is now being offered with a new diode and the www.datasheetarchive.com/files/eupec/gb/2_products/2_2_applications (in planung)/gb_2_5_001.htm |
eupec | 05/04/2004 | 13.02 Kb | HTM | gb_2_5_001.htm |
| semiconductor products, including IGBT high power and standard modules, thyristors and diodes www.datasheetarchive.com/files/eupec/de/1_eupec/de_1_5_000_2.htm |
eupec | 05/04/2004 | 10.83 Kb | HTM | de_1_5_000_2.htm |
| semiconductor products, including IGBT high power and standard modules, thyristors and diodes www.datasheetarchive.com/files/eupec/gb/1_eupec/gb_1_5_000_2.htm |
eupec | 05/04/2004 | 10.75 Kb | HTM | gb_1_5_000_2.htm |
| 1700V IGBT High Power Modules eupec's new 1700V Trench for driving IGBT and Mosfet power stages up to 1200V breakdown voltage. MAY 2003 High Power IGBT Driver Solution offers high . MAY 2003 eupec is introducing its new 3300V High Power 3300V High Power Module family is now being offered with a new diode and the www.datasheetarchive.com/files/eupec/de/2_products/2_4_marketingnews/de_2_4_001.htm |
eupec | 05/04/2004 | 19.47 Kb | HTM | de_2_4_001.htm |
| 1700V IGBT High Power Modules eupec's new 1700V Trench for driving IGBT and Mosfet power stages up to 1200V breakdown voltage. MAY 2003 High Power IGBT Driver Solution offers high . MAY 2003 eupec is introducing its new 3300V High Power 3300V High Power Module family is now being offered with a new diode and the www.datasheetarchive.com/files/eupec/gb/2_products/2_4_marketingnews/gb_2_4_001.htm |
eupec | 20/04/2004 | 19.53 Kb | HTM | gb_2_4_001.htm |
| medium and high power IGBT Modules While considering technical high reliability reached by eupec during the introduction of IGBT high power modules. ARCHIVES Technical Improvements in 1700V High Power IGBT Modules advantages of modern high voltage IGBT chip and packaging technology eupec is . ARCHIVES Novel compact low power IGBT Modules www.datasheetarchive.com/files/eupec/de/2_products/2_6_editorials/de_2_6_003.htm |
eupec | 05/04/2004 | 31.85 Kb | HTM | de_2_6_003.htm |
| medium and high power IGBT Modules While considering technical high reliability reached by eupec during the introduction of IGBT high power modules. ARCHIVES Technical Improvements in 1700V High Power IGBT Modules advantages of modern high voltage IGBT chip and packaging technology eupec is . ARCHIVES Novel compact low power IGBT Modules www.datasheetarchive.com/files/eupec/gb/2_products/2_6_editorials/gb_2_6_003.htm |
eupec | 20/04/2004 | 32.04 Kb | HTM | gb_2_6_003.htm |