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igbt high power

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Abstract: power the Home News Addresses Editorials Products Company .Core Search future Site Content Help Competence Application: Products: Motor Drives Traction Electrical Vehicles HVDC Transmission Power Supply Medical Equipment Wind Power Inductice Heating Welding IGBT Modules IGBT High Power Modules IGBT High Voltage Modules Power Integrated Modules PIM , discs N-Diode discs Fast switching Diode discs IGBT Stacks and Drivers Stacks with Thyristors and ... Original
datasheet

1 pages,
264.49 Kb

ac igbt F-thyristor high power igbt controller igbt igbt bridge switching power supply igbt controller igbt driver igbt welding modules igbt thyristor modules high voltage MOSFET IGBT RECTIFIER thyristor DATASHEET BRIDGE-RECTIFIER datasheet abstract
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Abstract: . . Home Products News Contact Editorials Job Offers Company Search power Site Content the future Short Form Catalog click to select data table - then click on outline for drawing Modules IGBT High Power Modules IGBT Standard Modules Mosfet Modules Power Integrated Modules PIM Phase Control , Attachements for Modules Heatsinks (see Stack Datasheets) IGBT Stacks & Driver Letter Symbols Type Designation Contact Schottky Rectifier Diodes Rectifier Diode Bridges Low Power Diodes Terms of delivery ... Original
datasheet

1 pages,
66.69 Kb

high current thyristor driver thyristor modules Thyristor catalog datasheet abstract
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Abstract: conductor products, including IGBT high power and standard modules, thyristors and diodes. delivery , Power (W) 100M eupec Product Range lî H Util II li ; e 10M SCR + Diode phase control ß Ü ... OCR Scan
datasheet

1 pages,
211.36 Kb

IGBT EUPEC eupec igbt EUPEC datasheet abstract
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Abstract: Content eupec Presentation Terms of Delivery High Power Components IGBT High Power Modules IGBT , Fast Rectifier Diodes Avalanche Rectifier Diodes Insulated Cellss Low Power Components Schottky Rectifier Diodes Rectifier Diode Bridges Low Power Diodes Accessories Clamping Force Clamping Devices Gate Leads Heatsinks Drivers for IGBT & Power Mosfet IGBT Stacks & Driver Explanations Letter Symbols Type , Power Mosfet IGBT Baugruppen und Treiber Erläuterungen Kurzzeichen Typenbezeichnungen ... OCR Scan
datasheet

1 pages,
49.53 Kb

thyristoren eupec igbt 3 phase IGBT gate driver igbt igbt catalog Thyristor catalog EUPEC Thyristor fast IGBT EUPEC Eupec thyristors catalog EUPEC Thyristor datasheet abstract
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Abstract: GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance . High Speed : tf=1.0iis(Max.) . Low Saturation Voltage : VcE(sat) = 5.0V(Max.) . Enhancement-Mode . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT a(B)o- Weight : 90g 'E MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Collector Power Dissipation (Tc=25°C) Junction Temperature ... OCR Scan
datasheet

2 pages,
40.01 Kb

MG75N1BS1 igbt high power datasheet abstract
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Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS40 MG25Q2YS40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input impedance · High speed: · · · · tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.) Low , ICP 50 DC IF 25 1ms IFM 50 Collector Power Dissipation (Tc = 25°C) PC , equipments which require high quality and/or reliability, and in equipments which could have major impact to ... Original
datasheet

5 pages,
598.29 Kb

toshiba power module TOSHIBA IGBT igbt 25A toshiba Toshiba bridge diode diode bridge toshiba MG25Q2YS40 MG25Q2YS40 abstract
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Abstract: GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance . High Speed : tf=1. Ous (Max.) trr=0.5ys(Max.) MG25N2YS1 MG25N2YS1 . Enhancement-Mode . Includes a Complete Half Bridge in one Package. . The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT Weight : 222g (Bl) (B2) MAXIMUM RATINGS (Ta=25°C) SYMBOL VCES vges , Collector Power Dissipation Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque ... OCR Scan
datasheet

5 pages,
167.56 Kb

A 222G t100a MG25N2YS1 MG25N2YS1 abstract
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Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6750 MP6750 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.35µs (Max.) (IC = 15A) trr = 0.15µs (Max.) (IC = 15A) · Low , 30 DC IF 15 1ms IFM 30 Collector Power Dissipation (Tc = 25°C) PC 55 W , equipments which require high quality and/or reliability, and in equipments which could have major impact to ... Original
datasheet

5 pages,
512.78 Kb

toshiba mp6750 MP6750 MP6750 abstract
datasheet frame
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q6ES42 MG25Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.5µs (Max.) trr = 0.5µs (Max.) · Low saturation voltage: VCE , 50 Collector Power Dissipation (Tc = 25°C) PC 200 W Junction Temperature Tj 150 , with us before you use these TOSHIBA products in equipments which require high quality and/or ... Original
datasheet

5 pages,
596.4 Kb

Toshiba transistor Ic 100A MG25Q6ES42 igbt 25A toshiba MG25Q6ES42 abstract
datasheet frame
Abstract: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG15Q6ES42 MG15Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · 6 IGBTs are built into 1 package · High speed: tf = 0.5µs (Max.) trr = 0.5µs (Max.) · Low saturation voltage: VCE , 30 Collector Power Dissipation PC 125 W Junction Temperature Tj 150 °C , use these TOSHIBA products in equipments which require high quality and/or reliability, and in ... Original
datasheet

5 pages,
586.09 Kb

MG15Q6ES42 DIODE i2t MG15Q6ES42 abstract
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Datasheet Content (non pdf)

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ARCHIVES Heat Sink Specification for IGBT Modules ARCHIVES IGBT High Power Modules ARCHIVES How is the nominal current IC for IHM/IHV IGBT ARCHIVES Standard IGBT Modules: Mechanical Attributes
www.datasheetarchive.com/files/eupec/gb/2_products/2_5_applicationsnotes/gb_2_5_003.htm
eupec 20/04/2004 28.53 Kb HTM gb_2_5_003.htm
ARCHIVES Heat Sink Specification for IGBT Modules ARCHIVES IGBT High Power Modules ARCHIVES How is the nominal current IC for IHM/IHV IGBT ARCHIVES Standard IGBT Modules: Mechanical Attributes
www.datasheetarchive.com/files/eupec/de/2_products/2_5_applicationsnotes/de_2_5_003.htm
eupec 20/04/2004 28.32 Kb HTM de_2_5_003.htm
medium and high power IGBT Modules While considering technical reliability reached by eupec during the introduction of IGBT high power modules. ARCHIVES Technical Improvements in 1700V High Power IGBT Modules advantages of modern high voltage IGBT chip and packaging technology eupec is ARCHIVES Novel compact low power IGBT Modules
www.datasheetarchive.com/files/eupec/gb/2_products/2_6_editorials/gb_2_6_003.htm
eupec 20/04/2004 32.04 Kb HTM gb_2_6_003.htm
medium and high power IGBT Modules While considering technical reliability reached by eupec during the introduction of IGBT high power modules. ARCHIVES Technical Improvements in 1700V High Power IGBT Modules advantages of modern high voltage IGBT chip and packaging technology eupec is ARCHIVES Novel compact low power IGBT Modules
www.datasheetarchive.com/files/eupec/de/2_products/2_6_editorials/de_2_6_003.htm
eupec 05/04/2004 31.85 Kb HTM de_2_6_003.htm
1700V IGBT High Power Modules eupec's new 1700V Trench MAY 2003 High Power IGBT Driver Solution offers high for driving IGBT and Mosfet power stages up to 1200V breakdown voltage MAY 2003 eupec is introducing its new 3300V High Power High Power Module family is now being offered with a new diode and the new
www.datasheetarchive.com/files/eupec/gb/2_products/2_2_applications (in planung)/gb_2_5_001.htm
eupec 05/04/2004 13.02 Kb HTM gb_2_5_001.htm
1700V IGBT High Power Modules eupec's new 1700V Trench MAY 2003 High Power IGBT Driver Solution offers high for driving IGBT and Mosfet power stages up to 1200V breakdown voltage MAY 2003 eupec is introducing its new 3300V High Power High Power Module family is now being offered with a new diode and the new
www.datasheetarchive.com/files/eupec/de/2_products/2_2_applications (in planung)/de_2_5_001.htm
eupec 05/04/2004 13.11 Kb HTM de_2_5_001.htm
semiconductor products, including IGBT high power and standard modules, thyristors and diodes.
www.datasheetarchive.com/files/eupec/gb/1_eupec/gb_1_5_000_2.htm
eupec 05/04/2004 10.75 Kb HTM gb_1_5_000_2.htm
semiconductor products, including IGBT high power and standard modules, thyristors and diodes.
www.datasheetarchive.com/files/eupec/de/1_eupec/de_1_5_000_2.htm
eupec 05/04/2004 10.83 Kb HTM de_1_5_000_2.htm
1700V IGBT High Power Modules eupec's new 1700V Trench for driving IGBT and Mosfet power stages up to 1200V breakdown voltage. MAY 2003 High Power IGBT Driver Solution offers high MAY 2003 eupec is introducing its new 3300V High Power High Power Module family is now being offered with a new diode and the new
www.datasheetarchive.com/files/eupec/gb/2_products/2_4_marketingnews/gb_2_4_001.htm
eupec 20/04/2004 19.53 Kb HTM gb_2_4_001.htm
1700V IGBT High Power Modules eupec's new 1700V Trench for driving IGBT and Mosfet power stages up to 1200V breakdown voltage. MAY 2003 High Power IGBT Driver Solution offers high MAY 2003 eupec is introducing its new 3300V High Power High Power Module family is now being offered with a new diode and the new
www.datasheetarchive.com/files/eupec/de/2_products/2_4_marketingnews/de_2_4_001.htm
eupec 05/04/2004 19.47 Kb HTM de_2_4_001.htm