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HFA3101BZ Intersil Corporation Gilbert Cell UHF Transistor Array; SOIC8; Temp Range: -40° to 85°C
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HFA3135IHZ96 Intersil Corporation Ultra High Frequency Matched Pair Transistors; SOT6; Temp Range: -40° to 85°C
HFA3101BZ96 Intersil Corporation Gilbert Cell UHF Transistor Array; SOIC8; Temp Range: -40° to 85°C
HFA3102BZ96 Intersil Corporation Dual Long-Tailed Pair Transistor Array; SOIC14; Temp Range: -40° to 85°C
ULN2004AIDE4 Texas Instruments 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, MS-012AC, GREEN, PLASTIC, SOIC-16

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igbt transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 6MBI100FC-060Module FUJI Electric IGBT Transistor Advancing the Semiconductor Industry Since 1972 Abstract The 6MBI100FC-060 is a discontinued insulated-gate bipolar transistor in a modular package by FUJI Electric, currently in â'Last Time Buyâ' sale through American Microsemiconductor. Features ï'§ ï'§ ï'§ ï'§ ï'§ ï'§ Square RBSOA Low Saturation Voltage Less Total Power Dissipation , /JISQ9100:2009 Rev. C ISO9001:2008 Cert No. 45325 6MBI100FC-060Module FUJI Electric IGBT Transistor American Microsemiconductor
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transistor bc 7-40 American Microsemiconductor 6MBI100FC-060M AS/EN/JISQ9100
Abstract: transistor (negative logic) PWM input signal for high side IGBT transistor (positive logic) Output signal , Output signal for ready status of the low side IGBT /PWM input signal for low side IGBT transistor (negative logic) PWM input signal for low side IGBT transistor (positive logic) Not connected Primary , and gate resistors When an IGBT transistor switches -on and -off a high peak of gate current has to , between IGBT gate and the driver output. Due to increased gate-emitter voltage the transistor is operated Infineon Technologies
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2ED250E12-F 1ED020I12-F C105t Diode C105T t60403-d4615 IGBT DRIVER application note T60403-D4615-X054 IGBT DRIVER SCHEMATIC AN2008-05 PMV45EN PG-DSO16 LP2951CM
Abstract: FILTER IGBT AN661/1194 1/5 APPLICATION NOTE 2.2 The IGBT transistor In motor control applications the switching frequency fSW of the IGBT transistor is generally less than 20kHz; therefore we , rise of collector current of the IGBT turn off reapplied voltage of the transistor junction temperature of the transistor on state threshold voltage of the IGBT ( @ TJ MAX ) dynamic resistance of the , (using a STTA806DI as an example) and the IGBT (using a STGP10N50). The input capacitor has a small STMicroelectronics
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DC MOTOR SPEED CONTROL USING chopper IGBT JUNCTION TEMPERATURE CALCULATION IGBT .XT FREE ENERGY DIAGRAM calculation of switching frequency IGBT full bridge converter
Abstract: QIR0620001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT transistor and one super fast recovery diode in , (724) 925-7272 IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Maximum Ratings, Tj , Conditions Per IGBT PRELIMINARY Min Typ Max Units 0.16 °C/W 06/07/97 QIR0620001 Powerex
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transistor* igbt 200A 300 V igbt module IC IGBT fast fast recovery diode 54 diode 600 volts ac chopper
Abstract: QIR0620001 Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 (724) 925-7272 www.pwrx.com IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT transistor and one super , , Youngwood, PA 15697 (724) 925-7272 www.pwrx.com IGBT H-Series Chopper Module 200/300 Amperes/600 Volts , 2 Symbol RJC Test Conditions Per IGBT PRELIMINARY Min Typ Max Units 0.16 Powerex
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igbt dc to dc chopper control 20-25kHz
Abstract: . Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Collector-emitter break down voltage , 7 2,12 2,24 2,9 V 0,1 mA 200 nA Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Gate emitter threshold voltage Gate-Schwellenspannung Collector-emitter saturation , Kollektorspitzenstrom Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage , V23990-P629F56 Output inverter Figure 1. Typical output characteristics Figure 2. Output inverter IGBT Vincotech
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V23990-P629-F56-PM V23990-P629-F56-01-14 P629-F56 IRRM10 IRRM90 IRRM100
Abstract: . Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Collector-emitter break down voltage , 7 Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Gate emitter threshold voltage , Kollektorspitzenstrom Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage , . Typical output characteristics Figure 2. Output inverter IGBT Typical output characteristics Output inverter IGBT Ic= f(VCE) Ic= f(VCE) 60 IC (A) IC (A) 60 50 50 40 40 Vincotech
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V23990-P629-FXX-PM V23990-P629-F46-01-14 P629-F46 V23990-P629F46
Abstract: . Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Collector-emitter break down voltage , 1m VGE(V) VGS(V) 3 5,5 7 Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Gate , Kollektorspitzenstrom Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage , fastPACK0 Output inverter Figure 1. Typical output characteristics Figure 2. Output inverter IGBT Typical output characteristics Output inverter IGBT Ic= f(VCE) Ic= f(VCE) 60 IC (A) IC (A Vincotech
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V23990-P629-F54-01-14 P629-F54 V23990-P629F54
Abstract: m u m à X QIR0620001 IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT transistor and one super , 15697 (724) 925-7272 IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Maximum Ratings, Tj , to Page 2 Symbol Test Conditions Rejc Per IGBT PRELIMINARY Min Typ Max -
OCR Scan
Abstract: QIR0620001 Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 (724) 925-7272 www.pwrx.com IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT transistor and one super fast recovery , www.pwrx.com IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Maximum Ratings, Tj=25°C unless , Conditions Per IGBT Min Typ Max 0.16 Units °C/W Page 2 PRELIMINARY 09/19/2006 Powerex Powerex
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igbt control servo motor
Abstract: with mounting direction for D5 and D25 3.3 Gate signal amplifier5 When IGBT transistor , detection When IGBT transistor conducts current few times greater than nominal the VCE voltage , Adapter Board for PrimePACKTM IGBT modules switching-off an IGBT transistor. The short circuit duration , PrimePACKTM IGBT modules 4.1 Schematic Figure 13 The MA300Exx ­ top transistor Figure 14 The , PrimePACKTM IGBT Modules IFAG AIM PMD ID AE Edition 2008-02-05 Published by Infineon Technologies AG Infineon Technologies
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AN2007-06 MA300E12 MA300E17 ZXTN2010Z 2ED300C17-S ZXTN2012Z SMJC188A ZD21 FF600R12IP4 Switching Behaviour of IGBT Transistors ZXTP2012Z STTH112U
Abstract: IGBT Transistor BSP 280 Preliminary Data q q q q q q q q VCE 1000 V I C 2.5 A N channel MOS input (voltage-controlled) High switch speed Very low tail current Latch-up free Suitable freewheeling diode BAX 280 Type Ordering Code Tape and Reel Information BSP 280 Q67000-S279 Pin Configuration 1 3 C E C Package BSP 280 SOT-223 4 G E6327: 1000 pcs/reel 2 , ) chip-ambient chip-soldering point IGBT = Insulated Gate Bipolar Transistor 1) Transistor on epoxy pcb Siemens
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S279 bsp280 BAX marking bipolar transistor td tr ts tf marking BAX
Abstract: module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast , Test Conditions Symbol Min. Typ. Max. Units Per IGBT - - 0.03 °C/W , TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDI) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT -
OCR Scan
CM600HA-28H CU600HA-28H
Abstract: CM400HA-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 SIHQIB IGBTMODâ"¢ H-Series Module 400 Amperes/600 Volts Description: Powerex IGBTMODâ"¢ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a , . Units - °C unless otherwise specified Test Conditions Min. Per IGBT - 0.085 °c , IGBTMODâ"¢ H-Series Module 400 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT -
OCR Scan
CM400HA-
Abstract: CM600HA-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 SinQlG IGBTMODâ"¢ H-Series Module 600 Amperes/600 Volts Description: Powerex IGBTMODâ"¢ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a , Thermal Resistance, Junction to Case RthQ-c) Per IGBT - 0.06 °C/W Thermal Resistance , IMPEDANCE CHARACTERISTICS (IGBT) 180 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) ?2m 21 -
OCR Scan
Abstract: switching applications. Each module consists of one IGBT Transistor in a single configuration with a , . Typ. Max. Rth(i-c)Q Per IGBT Module - - 0.08 Rthfl-c)0 Per FWDi Module - , THERM AL IMPEDANCE CHARACTERISTICS (IGBT) .,10-3 10-2 10~1 TIME, (s) 6 10° ,10-3 -
OCR Scan
CM600HU-12H
Abstract: IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-con nected super-fast recovery free wheel diode and an anode-collector connected , Thermal Resistance, Junction to Case Contact Thermal Resistance Test Conditions Per IGBT Per Free Wheel , IMPEDANCE CHARACTERISTICS (IGBT) ,10-3 10-2 1Q-1 1Q0 1Q1 , TRANSIENT THERMAL IMPEDANCE -
OCR Scan
CM200E3Y-12E GE 047 TRANSISTOR CM200E3Y-12
Abstract: IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-con nected super-fast recovery free wheel diode and an anode-collector connected , Resistance Rihü-c) Rth{c-f) Per IGBT Per Free Wheel Diode Per Half Module - - 0.11 0.24 0.09 , IGBTMODTM E-Series Module 300 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT -
OCR Scan
CM300E3 CM300E3Y-12E CM300E3Y GE2 TRANSISTOR QQQ72
Abstract: mNEHEX CM45QHA-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMODâ"¢ 450 Amperes/250 Volts Description: Powerex IGBTMODâ"¢ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in , , Junction to Case Rth(j-c) Per IGBT â'" â'" 0.17 °c/w Thermal Resistance, Junction to , Single IGBTMODâ"¢ 450 Amperes/250 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT -
OCR Scan
CM450HA-5F 00QT303 CU450HA-5F
Abstract: CM400HA-24H Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 SinQlG IGBTMODâ"¢ H-Series Module 400 Amperes/1200 Volts Description: Powerex IGBTMODâ"¢ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a , . Typ. M a x. Units Thermal Resistance, Junction to Case F>th(i-c) Per IGBT - - , Module 400 Amperes/1200 Votts TRAN SIENT T H ER M A L IM PED AN CE CHAR A CTERISTICS (IGBT) TRAN -
OCR Scan
CM400HA-24
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