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igbt transistor

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Abstract: Insulated Gate Bipolar Transistor (IGBT) Basics Abdus Sattar, IXYS Corporation IXAN0063 IXAN0063 1 , Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input , Transistor (IGBT) Basics Abdus Sattar, IXYS Corporation IXAN0063 IXAN0063 high-blocking voltage rating is normally , N-drift region and the resulting conductivity modulation. Insulated Gate Bipolar Transistor (IGBT , + collector partially recombine in this layer. The NPT Insulated Gate Bipolar Transistor (IGBT) Basics ... Original
datasheet

15 pages,
118.8 Kb

Bipolar Transistor IGBT UPS basics IXYS Corporation ixys application note fairchild power bjt datasheet IXSH30N60B2 power BJT PNP IGBT PNP TRANSISTORS BJT with low gate voltage input output bjt npn transistor SCHEMATIC servo dc IGBTS BJT safe operating area IXAN0063 transistor igbt IXAN0063 schematic diagram UPS IGBT IXAN0063 MOSFET IGBT THEORY AND APPLICATIONS IXAN0063 IGBT THEORY AND APPLICATIONS IXAN0063 IXAN0063 IXAN0063 TEXT
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Abstract: means of a gate resistor RG. Like the bipolar transistor, the IGBT has a dynamic saturation ­ phase , bipolar transistor has a lower saturation voltage (VCE sat VDSon) and is cheaper. In comparison with a bipolar transistor (assuming the same chip dimensions), a power MOSFET with a reverse voltage of VDS = , development of the conductivity-modulated MOSFET (IGBT), the BIMOS switch, and the MOS-GTO. The IGBT The , transistor. It combines the characteristics of the power MOSFET with those of the bipolar transistor. The ... Siemens
Original
datasheet

6 pages,
174.2 Kb

SIEMENS thyristor main disadvantages of mosfet comparison of IGBT and MOSFET Semiconductor Group igbt driver igbt SIEMENS mosfet, igbt, transistor 2A mosfet igbt driver stage IGBT tail time TEXT
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Abstract: drive IGBT drive Direct Drive by Power Transistor TLP251/TLP351 TLP251/TLP351 TLP557 TLP557 TLP250 TLP250 TLP557 TLP557 , Modem,Tester Transistor, Thyristor, Triac,etc. Transistor, Thyristor, Triac,etc. Inverter,FA , name Package Output type Feature TLP421 TLP421 DIP4pin Transistor Standard TLP421F TLP421F DIP4pin Transistor 8mm Clearance, creepage TLP421F TLP421F(D4) DIP4pin Transistor W/W safety approval TLP181 TLP181 MFSOP Transistor TLP181 TLP181(V4) MFSOP Transistor TLP281 TLP281 SOP ... Toshiba
Original
datasheet

17 pages,
611.13 Kb

induction cooker circuit with IGBT TLP250 MOSFET DRIVER application note triac 200a TLP251 transistor for inverter IGBT driver igbt ac motor speed control TLP351 Inverter TLP250 TLP250 TLP251 MOSFET DRIVER TLP251 "direct replacement" triac inverter DP0630001 TLP250 application DP0630001 igbt induction cooker DP0630001 induction cooker coil design DP0630001 TLP521 MOSFET DRIVER DP0630001 control circuit of induction cooker DP0630001 TRANSISTOR REPLACEMENT GUIDE DP0630001 TLP250 MOSFET DRIVER DP0630001 TLP250 igbt driver applications DP0630001 DP0630001 DP0630001 TEXT
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Abstract: detailed comparison for different transistor types (MOSFET, IGBT), technologies (NPT-, PT) of different , Transistor is in both cases a Ultra fast PT IGBT. Already at switching frequencies > 20kHz the NPT-High , be commutated and the transistor must switch on additional the reverse recovery current of the free , transistor significantly. A fast diode is a must for high frequency and hard switching applications. At switching-off the transistor the diode is commutated again and takes over the current. But also here are ... Vincotech
Original
datasheet

13 pages,
1128.97 Kb

IGBT rectifier theory TEXT
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Abstract: current is supplied to the PNP transistor, and 6.3. IGBT The IGBT (Insulated Gate Bipolar Transis , 6. Transistor C h a racteristics 6.1. Switching Characteristics In this section, we will look , Figure 1, the resulting base and collector waveforms are as shown in Figure 2. A transistor's switching , for Storage Tim e, " tr " stands for Fall Time. Thus, in a diffusion base type NPN transistor, the , transistor's frequency characteristics. Conventionally, frequency characteristics had to be sacrificed in ... OCR Scan
datasheet

5 pages,
219.01 Kb

pnp transistor 800v TEXT
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Abstract: FILTER IGBT AN661/1194 AN661/1194 1/5 APPLICATION NOTE 2.2 The IGBT transistor In motor control applications the switching frequency fSW of the IGBT transistor is generally less than 20kHz; therefore we , rise of collector current of the IGBT turn off reapplied voltage of the transistor junction temperature of the transistor on state threshold voltage of the IGBT ( @ TJ MAX ) dynamic resistance of the , (using a STTA806DI STTA806DI as an example) and the IGBT (using a STGP10N50 STGP10N50). The input capacitor has a small ... STMicroelectronics
Original
datasheet

5 pages,
35.93 Kb

DC MOTOR 500W IGBT Driver ic and 20khz STTA806DI Reduced conduction losses rectifier drive motor 10A with transistor ETON all ic in one file FULL WAVE RECTIFIER and waveforms DC MOTOR SPEED CONTROL USING IGBT igbt transistor IGBT full bridge converter calculation of switching frequency FREE ENERGY DIAGRAM IGBT .XT IGBT JUNCTION TEMPERATURE CALCULATION DC MOTOR SPEED CONTROL USING chopper STGP10N50 TEXT
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Abstract: Surge forward current Stoßstrom Grenzwert Energypulse (sin 50Hz) Grenzlastintegral Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector , Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage , current Periodischer Spitzenstrom 2 It Grenzlastintegral Transistor Brake-Chopper Transistor Brems-Chooper , Rectifier Transistor Inverter Diode Inverter Transistor Brake Diode Brake RthJC RthJC RthJC RthJC RthJC ... Tyco Electronics
Original
datasheet

10 pages,
238.9 Kb

tyco igbt V23990-P186-A10 TEXT
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Abstract: modifizierter MOS- Transistor. Der MOSFET ist auf einem N+N-Silizium aufgebaut. Der IGBT (Bild 2) dagegen hat , IGBT Transistor Semiconductor Group 19 Technische Angaben Technical Information , Abschalten des IGBT, wie dies im Bild 3 dargestellt ist. The switching response of a MOS- Transistor , des IGBTs, dann beginnt der Stromfluß durch den IGBT und die Spannung am Transistor wird abgebaut , through the IGBT and the voltage at the transistor breaks down. The time from switching the gate voltage ... Siemens
Original
datasheet

32 pages,
856.79 Kb

BSM50G calculation of IGBT snubber Dioden Tabelle BSM200G PN diode specifications QS 100 NPN Transistor BSM15GD120DN2 250068 siemens igbt BSM 25 gb 100 d BSM300 ECONOPACK mounting instructions Thyristor Tabelle bsm 50 gd 120 n2 BSM15GD BSM15GD120DN siemens mosfet BSM 50 siemens igbt bsm 75 gd 120 n2 bsm 25 gd 1200 n2 TEXT
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Abstract: GB100DA60UP GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A , -Jul-10 GB100DA60UP GB100DA60UP Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A THERMAL AND MECHANICAL , Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A 4 3.5 150 3 2.5 100 A 75 A VCE (V , Transistor (Warp 2 Speed IGBT), 100 A 0.001 1E-005 1E-005 0.0001 0.001 0.01 0.1 1 Rectangular , Number: 93001 Revision: 22-Jul-10 GB100DA60UP GB100DA60UP Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT ... Vishay Semiconductors
Original
datasheet

9 pages,
152.74 Kb

E78996 diode GB100DA60UP TEXT
datasheet frame
Abstract: GT100DA120U GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A , Gate Bipolar Transistor (Trench IGBT), 100 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise , Gate Bipolar Transistor (Trench IGBT), 100 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum , Semiconductors 200 175 150 125 TJ = 150 °C 2.25 Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 2.75 , -Jul-10 GT100DA120U GT100DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 40 35 30 310 290 270 250 230 Vishay ... Vishay Semiconductors
Original
datasheet

9 pages,
150.4 Kb

GT100DA120U TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
BUP 212  IGBT Transistor IGBT Transistor  Q67040-A4407-A2 Q67040-A4407-A2  BUP 313  IGBT Transistor BUP 314  IGBT Transistor BUP 400  IGBT Transistor
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~2127.htm
Infineon 28/10/2000 70.53 Kb HTM pro~2127.htm
BUP 212  IGBT Transistor IGBT Transistor  Q67040-A4407-A2 Q67040-A4407-A2  BUP 313  IGBT Transistor BUP 314  IGBT Transistor BUP 400  IGBT Transistor
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~1778.htm
Infineon 28/10/2000 70.53 Kb HTM pro~1778.htm
) with dI F /dt = dI C /dt (controlled by transistor drive) IGBT DIODE M RFI FILTER DRIVER APPLICATION NOTE 2/5 2.2 The IGBT transistor In motor control applications the switching frequency f SW of the IGBT transistor is generally less than 20kHz; therefore we neglect its gate energy e G current of the IGBT V CE = turn off reapplied voltage of the transistor T JT = junction temperature of the transistor E O = on state threshold voltage of the IGBT ( @ T J MAX ) R T = dynamic
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3715-v1.htm
STMicroelectronics 25/05/2000 12.25 Kb HTM 3715-v1.htm
. V R . I RM 2 ) / ( 6 . dI F /dt ) with dI F /dt = dI C /dt (controlled by transistor drive) IGBT DIODE M RFI FILTER DRIVER APPLICATION NOTE 2/5 2.2 The IGBT transistor In motor control applications the switching frequency f SW of the IGBT transistor is generally less than 20kHz; therefore we neglect its rate of rise of collector current of the IGBT V CE = turn off reapplied voltage of the transistor T JT = junction temperature of the transistor E O = on state threshold voltage of the IGBT ( @ T J MAX
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3715.htm
STMicroelectronics 20/10/2000 13.1 Kb HTM 3715.htm
microcontroller, STGP10N50 STGP10N50 IGBT transistor and STTA806DI STTA806DI diode. 9/9 APPLICATION NOTE Information furnished is Application block diagram. The microcontroller generates a PWM signal and controls the IGBT through the connecting a 15V voltage source to the transistor gate ; w they are fast: the switching frequency can be OVERTEMPERATURE transistor is made by a 15V auxiliary supply that is connected to the 350V DC supply, and by a functions (see figure 11) : w A transistor current sensor (necessary for power limitation). A resistor or
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3714-v1.htm
STMicroelectronics 25/05/2000 18.43 Kb HTM 3714-v1.htm
motor drive with ST6265 ST6265 microcontroller, STGP10N50 STGP10N50 IGBT transistor and STTA806DI STTA806DI diode. 9/9 APPLICATION diagram. The microcontroller generates a PWM signal and controls the IGBT through the buffer-amplifier. : they are controlled by connecting a 15V voltage source to the transistor gate ; w they are fast: the detector MCU Current sensor SHORT CIRCUIT, OVERVOLTAGE OVERTEMPERATURE transistor is made by a 15V transistor current sensor (necessary for power limitation). A resistor or a SENSEFET can be used with an
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3714.htm
STMicroelectronics 20/10/2000 19.2 Kb HTM 3714.htm
(RECTIFIER) THYRISTOR (TRIAC, SCR, GCT, SGCT, GTO) IGBT IPM, ASIPM, DIP IPM ACCESSORIES: GATE DRIVERS, DC-DC CONVERTERS, ETC. TRANSISTOR Conference Paper IGBT MODULE IGBT MODULE IGBT Chip Technology A Fast Switching 1200V CSTBT Conference Paper IGBT IGBT Device Selection, IGBT Chip Technology, Ratings and Characteristics A Low Inductance, High
/datasheets/files/powerex/appnotes.html
Powerex 07/07/2003 178.64 Kb HTML appnotes.html
STB3N60-1 STB3N60-1 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 8 629 Datasheets STP7NB60 STP7NB60 592 Datasheets STGD7NB60H STGD7NB60H N-CHANNEL 7A - 600V - DPAK POWERMESH IGBT 8 592 Datasheets STGP7NB60H STGP7NB60H N-CHANNEL 7A - 600V - TO-220 POWERMESH IGBT 8 592 Datasheets STGP7NB60HD STGP7NB60HD STGP7NB60HDFP STGP7NB60HDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP POWERMESH IGBT 9 592 Datasheets STGP20NB60H STGP20NB60H N-CHANNEL 20A - 600V - TO-220 POWERMESH IGBT 8 592 Datasheets
/datasheets/files/stmicroelectronics/stonline/pnsearch/static/251.htm
STMicroelectronics 31/03/1999 14.92 Kb HTM 251.htm
Figure 2. Comparison of 500V IGBT and MOSFET in a single transistor chopper Losses (W) I PEAK (A ST | COMPARISON OF MOSFET AND IGBT AND IGBT TRANSISTORS IN MOTOR DRIVE APPLICATIONS AN663 AN663 Document Format NOTE 1/4 AN663/0295 AN663/0295 COMPARISON OF MOSFET AND IGBT TRANSISTORS IN MOTOR DRIVE APPLICATIONS by B. MOSFETs. In practice there is no single solution, and the choice will depend on the intrinsic transistor
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3717-v1.htm
STMicroelectronics 25/05/2000 8.83 Kb HTM 3717-v1.htm
Transistor Chopper APPLICATION NOTE 2/4 Figure 2. Comparison of 500V IGBT and MOSFET in a single transistor ST | COMPARISON OF MOSFET AND IGBT IGBT TRANSISTORS IN MOTOR DRIVE APPLICATIONS AN663 AN663 Document Format Size COMPARISON OF MOSFET AND IGBT TRANSISTORS IN MOTOR DRIVE APPLICATIONS by B. Maurice, G. Izzo, T. Castagnet 1. solution, and the choice will depend on the intrinsic transistor characteristics and the requirements of
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3717.htm
STMicroelectronics 20/10/2000 9.11 Kb HTM 3717.htm