NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: High Q1 IGBT 10s 220A 60A 8V 10s IGBT 98 6 IR IRGPC40F IRGPC40F , ,(310)322-3331 AN-984J AN-984J IGBT G. Castino, A. Dubashi, S. Clemente, B. Pelly IGBT 1 IGBT IGBT "" IGBT "" tsc IGBT IGBT dv/dt IGBT UPS IGBT IGBT IGBT VCE(SAT) IGBT IGBT 2 IGBT IGBT IGBT IGBT IGBT 1 "" 1 IGBT 22VIGBT 22VIGBT 5s ... | Original |
6 pages, |
igbt 30A 350VVGE Pelly MOSFET IGBT RECTIFIER IRGPC40F IGBT 60A igbt UPS IGBT application notes 5A IGBT rectifier pwm igbt igbt AN-984J AN-984J abstract |
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| Abstract: 788J EconoPACKTM Shunt 14 3SINAMICS S120 60A . 30A 13 Sigma-Delta 15 IGBT 16kW , IGBT M. Hornkamp1, R.Tschirbs1 1 eupec GmbH, Max-Planck-Straße 5, D-59581 D-59581 Warstein, Michael.Hornkamp@eupec.com , Tel.: +49-(0)2902-764-1159 IGBT IGBT PCB IGBT 35kW P=I2-R IGBT 5.5kW PCB IGBT 2: 150A IGBT IGBT · · · · · · · · PCB IGBT EconoPACKTM NTC IGBT3 - R(%) = ... | Original |
6 pages, |
power supply for igbt driver S120 35kW HCPL-316J FS150R12KE3 FS75R12KE3_B3 sinamics IGBT 1000V 100A IGBT EUPEC driver igbt SIEMENS 2ED020I12-F IGBT hcpl316j D-59581 D-59581 abstract |
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| Abstract: 100bt t0220ab igbt ultra600b 23at0220ab igbt+amoa 600b23at0220ab igbt 600b 60a 160bt t0220ab igbt , MOflynM IGBT b an^aBMTHOM nopaflKe bup203 (t0220) BUP212 BUP212 BUP213 BUP213 BUP313 BUP313 BUP313D BUP313D BUP314 BUP314 BUP314D BUP314D , MG300Q1US51 MG300Q1US51 KpaTKoe onMcaHMe igbt 1200b 22a 125bt t0220ab igbt 1200b 30a200bt t0220ab igbt 1200b 32a 200bt t0218ab ibgt 1200b 32a 200bt t0218ab igbt 1200b 52a 300bt t0218ab igbt 1200b 42a 300bt t0218ab igbt 250b 20a 180bt t03pl igbt 250b 20a 250bt t03pl igbt 600b 54at0247 igbt 600b 63at0247 igbt 600b 9a 38bt ... | OCR Scan |
2 pages, |
MG50Q2YS40 SKM100GB124D MG100Q2YS42 SKM22GD123D IXDH30N120D1 IRG4BC20S IRG4BC20KD IRG4BC10K igbt to247 IGBT IRG4PC50UD T0220AB 1200v 50A IGBT T03PL BUP314 BUP212 BUP213 BUP212 abstract |
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| Abstract: MITSUBISHI Nch IGBT MITSUBISHI Nch IGBT CT90AM-18 CT90AM-18 CT90AM-18 CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR , . 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation , Sep. 2000 MITSUBISHI Nch IGBT CT90AM-18 CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR ELECTRICAL , - 0.20 0.30 - - 祍 祍 ICP = 60A, Tj = 125癈, dv/dt = 200V/祍 - - 0.6 6 1.0 , 60A, V GE = 0V - - 3.0 V trr Rth (ch-c) Diode reverse recovery time Thermal ... | Original |
2 pages, |
MJ 545 transistor CT90AM-18 IGBT tail time CT90AM-18 abstract |
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| Abstract: 3.0 V trr Rth(j-c) Diode reverse recovery time Thermal resistance (IGBT) IE = 60A, dis , MITSUBISHI Nch IGBT CT60AM-18F CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F CT60AM-18F OUTLINE , . 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation , Conditions VGE = 0V Sep. 2000 MITSUBISHI Nch IGBT CT60AM-18F CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR , ) tf Turn-off delay time Turn-off fall time Etail Itail Tail loss Tail current ICP = 60A ... | Original |
2 pages, |
IGBT tail time IGBT 900v 60a IGBT 60A IGBT CT60AM ct60am18f CT60AM-18F CT60am IGBT CT60AM-18F abstract |
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| Abstract: MITSUBISHI Neh IGBT ^s- CT60AM-18F CT60AM-18F > ' v.->:v: , . fine» sp =utìled INSULATED GATE BIPOLAR , • > , ~ +150 °C Tstg Storage Temperature -40 ~ +150 °C Sep.1998 A MITSUBISHI ELECTRIC MITSUBISHI Nch IGBT , = 10V, Ic = 6mA 2.0 4.0 6.0 V VCE(sat) Collector-emitter saturation voltage Ic = 60A, Vce = 15V - , 60A, VGE = 15V, Rg = 10£2 - 0.05 - US tr Turn-on rise time - 0.1 - us td(off) Turn-off delay time ... | OCR Scan |
2 pages, |
IGBT 60A CT60AM-18F CT60am IGBT CT60AM-18F abstract |
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| Abstract: MITSUBISHI Nch IGBT ARY CT60AM-18F CT60AM-18F MIN RELI e. tion. cifica t to chang c al spe t , . 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation , PC Tj Tstg Conditions VGE = 0V Sep.1998 MITSUBISHI Nch IGBT ARY CT60AM-18F CT60AM-18F MIN , capacitance Output capacitance Reverse transfer capacitance IC = 60A, VCE = 15V Turn-on deray time , VCE = 25V, VGE = 0V, f = 1MHz VCC = 300V, IC = 60A, VGE = 15V, RG = 10 Limits Unit Min. ... | Original |
2 pages, |
IGBT 900v 60a ct60am18F ct60am CT60AM-18F datasheet abstract |
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| Abstract: SGL60N90DG3 SGL60N90DG3 N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (at lc=60A) * High Input Impedance * Built in Fast Recovery Diode APPLICATIONS * Home , TO-264 This Material Copyrighted By Its Respective Manufacturer SGL60N90DG3 SGL60N90DG3 N-CHANNEL IGBT ELECTRICAL , - - 500 nA VCE(sat) Collector to Emitter saturation voltage VGE = 15V, lc =60A - 2.0 2.7 V Cies , Reverse transfer capacitance - 220 - pF td(on) Turn on delay time Vcc = 600V , lc = 60A Vge=15V Rg = 51 ... | OCR Scan |
6 pages, |
SGL60N90DG3 micro wave oven I-40X induction heater HF IGBT SGL60N90DG3 abstract |
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| Abstract: SGL60N98D SGL60N98D IGBT CO-PAK FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at lc=60A) * High Input Impedance APPLICATIONS * Home Appliance - Induction Heater - IH , Material Copyrighted By Its Respective Manufacturer SGL60N98D SGL60N98D IGBT CO-PAK ELECTRICAL CHARACTERISTICS , (sat) Collector to Emitter saturation voltage VGE = 15V, lc =60A - 2.7 3.5 V Cies Input capacitance , capacitance - 200 - pF ton Turn on time Vcc = 600V , lc = 60A Vge=15V Rg = 51 n Resistive load - 350 800 ns ... | OCR Scan |
5 pages, |
micro wave oven ih jar SGL60N98D induction heater SGL60N98D abstract |
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| Abstract: SGL60N90D SGL60N90D IGBT CO-PAK FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at lc=60A) * High Input Impedance APPLICATIONS * Home Appliance - Induction Heater - IH , Material Copyrighted By Its Respective Manufacturer SGL60N90D SGL60N90D IGBT CO-PAK ELECTRICAL CHARACTERISTICS , (sat) Collector to Emitter saturation voltage VGE = 15V, lc =60A - 2.7 3.5 V Cies Input capacitance , capacitance - 200 - pF ton Turn on time Vcc = 600V , lc = 60A Vge=15V Rg = 51 n Resistive load - 350 800 ns ... | OCR Scan |
5 pages, |
SGL60N90D SGL60N90D abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| ############################################################## # # # Saber model for HGTG12N60A4 SMPS-IGBT # # Created by Alexander H # # This model is for the > & HGT1S12N60AS HGT1S12N60AS HGT1S12N60AS HGT1S12N60AS ############################################################## template hgtg12n60a4 electrical a, g, k { igbt_b. \ model attributes=(\ a_ref=102m,\# a=102m for vt vtdtco=0m,\# Temperature exponent for vtd wb=4.8m,\# wbuf=.6m)# igbt_b.igbt1 a g k = model www.datasheetarchive.com/files/fairchild/pdfs/models/hgtg12n60a4.txt |
Fairchild | 22/08/2003 | 2.75 Kb | TXT | hgtg12n60a4.txt |
| ############################################################## # # # Saber model for HGTG12N60A4 SMPS-IGBT # # Created by Alexander H # # This model is for the > & HGT1S12N60AS HGT1S12N60AS HGT1S12N60AS HGT1S12N60AS ############################################################## template hgtg12n60a4 electrical a, g, k { igbt_b. \ model attributes=(\ a_ref=102m,\# a=102m for vt vtdtco=0m,\# Temperature exponent for vtd wb=4.8m,\# wbuf=.6m)# igbt_b.igbt1 a g k = model www.datasheetarchive.com/files/fairchild/pdfs/models actual/hgtg12n60a4.sin |
Fairchild | 22/08/2003 | 2.75 Kb | SIN | hgtg12n60a4.sin |
| * IGBT Electrical Parameters * * Product: HGTG20N60A4D / HGT4E20N60A4DS * 600V SMPS Series N-Ch IGBT with Anti-Parallel Hyperfast Diode * Package: JEDEC TO-247 .28 TT=3.0e-8 .ENDS HGTG20N60A4D * IGBT Thermal Model * .SUBCKT HGTG20N60A4D_Thermal TH TL CTHERM1 TH 6 4.7e-3 CTHERM2 6 5 7.4e-3 CTHERM3 5 4 8.2e-3 CTHERM4 *- .subckt HGTG20N60A4D C G E LE 74 E 7.5n RE 83 74 1.1m RC 85 C 10.1m RG G 82 1.58 CGC 82 www.datasheetarchive.com/files/fairchild/simulation-models/hgtg20n60a4d_rev1.lib |
Fairchild | 22/10/2012 | 2.03 Kb | LIB | hgtg20n60a4d_rev1.lib |
| * IGBT Electrical Parameters * * Product: HGTG40N60A4 * 600V SMPS Series N-Ch IGBT * Package: JEDEC TO-247 * Model Format: SPICE2G6 *- .subckt HGTG40N60A4 C G E LE 74 E 0.67n RE 83 74 0.6m RC 85 C 7.1m RG G 82 8.2m CGC 82 C + IS=1.00e-7 .ends HGTG40N60A4 * IGBT Thermal Model * .SUBCKT HGTG40N60A4_Thermal TH TL CTHERM1 TH 6 4.7e-3 CTHERM2 6 5 7.4e-3 CTHERM3 5 4 8.2e-3 CTHERM4 www.datasheetarchive.com/files/fairchild/simulation-models/hgtg40n60a4.lib |
Fairchild | 22/10/2012 | 1.75 Kb | LIB | hgtg40n60a4.lib |
| . Integrated Power Stage With Sense Elements Part Number Description Introduction MHPM7A15A60A 15 A MHPM7A20A60A 20 A, 600 V w/ sense elements Available Now MHPM7A12A120A MHPM7A12A120A MHPM7A12A120A MHPM7A12A120A 12 A, 1200 V w/ sense elements Sense Elements MHPM7B15A60A 15 A, 600 V w/out sense elements Available Now MHPM7B8A120A MHPM7B8A120A MHPM7B8A120A MHPM7B8A120A 8 A, 1200 V w/out sense elements Available Now MHPM7B20A60A 20 A, 600 V w/out sense elements Available Now Motorola has a family of Integrated IGBT Power Stage modules for variable speed motor control applications www.datasheetarchive.com/files/motorola/design-n/ppd/html/hpm.htm |
Motorola | 25/11/1996 | 7.41 Kb | HTM | hpm.htm |
| Fast IGBT Transistors Type VCE IC Package PDF Size Status BUP 314 S 1200 V 25.0 A TO 218 61 K 02.97 SGB 02N60 02N60 02N60 02N60 / SGP 02N60 02N60 02N60 02N60 600 V 2.0 A TO 263 / TO 220 85 K 04.98 SGB 04N60 04N60 04N60 04N60 / SGP 04N60 04N60 04N60 04N60 600 V 4.0 A TO 263 / TO 220 85 K 04.98 SGB 06N60 06N60 06N60 06N60 / SGP 06N60 06N60 06N60 06N60 600 V 6.0 A TO 263 / TO 220 86 K 04.98 SGB 10N60 10N60 10N60 10N60 / SGP 10N60 10N60 10N60 10N60 www.datasheetarchive.com/files/infineon/products/36/3616.htm |
Infineon | 26/11/1998 | 5.65 Kb | HTM | 3616.htm |
| STRIPFET POWER MOSFET | Contents | STP60NE10 STP60NE10 STP60NE10 STP60NE10 - N-CHANNEL 100V - 0.016 OHM - 60A TO-220/TO-220FP STRIPFET POWER MOSFET | Contents | STP60NE10FP STP60NE10FP STP60NE10FP STP60NE10FP - N-CHANNEL 100V - 0.016 OHM - 60A TO-220/TO-220FP - POWERSO-10 POWERSO-10 POWERSO-10 POWERSO-10 STRIPFET MOSFET | Contents | STW60NE10 STW60NE10 STW60NE10 STW60NE10 - N-CHANNEL 100V - 0.016 OHM - 60A TO-247 WITH INTEGRATED PHY | Contents | STGB3NB60HD STGB3NB60HD STGB3NB60HD STGB3NB60HD - N-CHANNEL 3A - 600V TO-263 POWERMESH IGBT | Contents | STGD3NB60H STGD3NB60H STGD3NB60H STGD3NB60H - N-CHANNEL 3A - 600V TO-252 POWERMESH IGBT | Contents | STGP3NB60H STGP3NB60H STGP3NB60H STGP3NB60H - N www.datasheetarchive.com/files/stmicroelectronics/stonline/books/pdf/newalpha/ds/s-v2.htm |
STMicroelectronics | 14/06/1999 | 11.38 Kb | HTM | s-v2.htm |
| Collector Current I C 60 A MM118-06 MM118-06 MM118-06 MM118-06 (#22948) 3 Phase IGBT Module Division Santa Ana Datasheet MSC0321A MSC0321A MSC0321A MSC0321A.PDF Mil-Spec (none) Prod-Class (none) Shipping (none) Qual Data (none www.datasheetarchive.com/files/microsemi/products/22948-v1.htm |
Microsemi | 08/12/1999 | 4.66 Kb | HTM | 22948-v1.htm |
| 3 Phase IGBT Module Selector Guide Select a property below for a list of related Microsemi part numbers Breakdown Voltage Collector-to-Emitter 600 V 1200 V Collector Current 52 A 60 A Power Dissipation Package SEE FACTORY (STD) Divisions Santa Ana www.datasheetarchive.com/files/microsemi/products/3gbt/3gbt-v1.htm |
Microsemi | 07/12/1999 | 2.81 Kb | HTM | 3gbt-v1.htm |
| 60A < 1 kHz TO-247AC 91465 IRG4BC40S IRG4BC40S IRG4BC40S IRG4BC40S 600V 1.6V 60A INTERNATIONAL RECTIFIER EXPANDS LINE OF STATE-OF-THE-ART IGBTs EL SEGUNDO, CA, December 19 generation series of 600 volt ultra fast insulated gate bipolar transistors (IGBTs). These new Gen 4 achieved a 30% overall device performance improvement in efficiency with their Gen 4 IGBTs. "Since many of Gen 4 and new, improved, guaranteed specs again propel IR to the forefront of IGBT efficiency www.datasheetarchive.com/files/international-rectifier/docs/wcd00002/wcd00285.htm |
International Rectifier | 06/10/1998 | 9.45 Kb | HTM | wcd00285.htm |