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WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey
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Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1N34A Optimized For Radio Frequency Response 0.31 Diodes Germanium and Selenium. Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 1N34A 1N34A Optimized For Radio Frequency Response Enter code INTER3 at checkout , Available from $ 0.31 Manufacturer Partnumber: List Price: Our Price: You Save: 1N34A $ 0.39 Information , US | VIEW CART | SHIPPING http://store.americanmicrosemiconductor.com/1n34a.html 4/12 -
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2N140 2N408 philco transistors DS503 westinghouse transistors westinghouse DIODES DELCO Radio transistor 2N252 2N309 521-6T2 528-6T2 2N139
Abstract: . y y T y y T R p r}- ACR810-107 ACR810-108 ACR83-1001 ACR83-1002 ACR83-1003 1N34A R210 , -1006 ACR83-1007 ACR83-1008 TR-05 TR-05 TR-05 1N34A R210 . . A0149-01 AD148 , « y . , N34A â AAY'S ^ : 1N34A iAAYi8 "r.: , : : IN34A 1N34A. : : â IN34A 1 vIN34A 1 . IN34A AF118 AF119 .25T10 to AT466 IR R e p la c e  , AA131 : IN34A : ; 1N34A : / IN34A ' ]N34A ; IM34 A . AC160-GRN AC160-RED AC160-YEL AC160A American Microsemiconductor
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1N34A do-35 diodes 1N34A
Abstract: Submit ¡ ¡ 1N34A Availability Buy 1N34A at our online store ! 1N34A Information Cate gory » Diodes Class » Germanium and Selenium Diodes Type » Germanium Diodes 1N34A Specifications Milita ry -
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Tr431 BSF17 18DB6A 1N1525 B1274 transistor A1946 25T12 Z1012 Z1014 Z1018 AA138 AA140
Abstract: 1N34A POINT CONTACT GERMANIUM DIODE The germanium point contact (Ge) diodes are widely used For detecting the rectifying efficiency or for switching on the radio, TV, or stereo, ect. Features â'¢ High reliability for resistance to vibration and shock proof. â'¢ High withstand voltage. â'¢ Small reverse current. â'¢ Excellent electrical characteristics suitable for FM. detection or MPX , °C Storage Temperature Range Ts -55 to +75 °C Characteristics (1N34A) Symbol Test condition American Microsemiconductor
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DIODE 1N34A 1n34a diode diode germanium 1N34A 1n34a germanium diode
Abstract: 1N34A POINT CONTACT GERMANIUM DIODE The germanium point contact (Ge) diodes are widely used for detecting the rectifying efficiency or for switching on the radio, TV, or stereo, ect. FEATURE * High reliability for resistance to vibration and shock proof. * High withstand voltage. * Small reverse current. * Excellent electrical characteristics suitable for FM. detection or MPX. APPLICATION , Temperature T. ] 75 °C Storage Temperature Range Ts -55 to + 75 °C Characteristics (1N34A) Symbol Test -
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DIODE 1N34A Reverse resistance germanium point contact diode n34a germanium germanium diode germanium diode junction capacitance
Abstract: MCC TM Micro Commercial Components Micro Commercial Components Corp. Products End of Life Notification Issue date: Jan-1th-2009 Last Buy Date : N/A Description and Purpose: MCC has undergone a review of its core business and products , and determined to discontinue below products: Discontinued Devices 1N34A Possible Replacements N/A www.mccsemi.com MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N34A Features · · -
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T-75 A HIGH VOLTAGE DIODES T-75 High voltage diode T-75 HIGH VOLTAGE DIODES 20PF T-75 DIODE
Abstract: I n ter n a tio n a l 1N34A S e m ic o n d u c to r , I n c . to GERMANIUM GLASS DIODES 1N3773 MAXIMUM RATINGS * \ O p e ra tin g T e m p e ra tu re : -55 °C to +70 °C S to ra g e T e m p e ra tu re : A -55 °C to +1 0 0 °C 2.718 O T DI A * E LE C T R IC A L C H A R A C T E R IS T IC S f JEDEC TYPE NUMBERS P E AK INVERSE VO LTAG E vF Volts V olts 1N34A 60 1N55B MAXIMUM REVERSE LEAKAG E MAXIMUM FORWARD V O LTAG E Micro Commercial Components
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1N34A equivalent Diode Equivalent 1N34A equivalent of diode 1N34A 1N34
Abstract: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 1N34A Features · · · Germanium Diode 65 Volt Low Leakage Current Flat Junction Capacitance High Mechanical Strength Maximum Ratings · · DO-7 O O Operating Temperature: -65 C to +75 C Storage Temperature: -65OC to +75OC D Electrical Characteristics @ 25OC Unless Otherwise Specified Peak Inverse Voltage Average Rectified Current Peak Forward Surge Current Maximum -
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1N348 1N277 1N996 1N3466 1N3467 1N3666
Abstract: MCC Features · · · Low Leakage Current Flat Junction Capacitance High Mechanical Strength omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1N34A Germanium Diode 65 Volt DO-7 Maximum Ratings · · Operating Temperature: -65°C to +75°C Storage Temperature: -65°C to +75°C D Electrical Characteristics @ 25°C Unless Otherwise Specified Peak Inverse Voltage Average Rectified Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum Reverse Current Typical Shanghai Lunsure Electronic
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1N34* diode equivalent to 1N34a germanium diode equivalent Germanium diode data sheet equivalent components of diode 1N34A DO-7
Abstract: MCC GERMANIUM DIODES OPERATING/STORAGE TEMPERATURE RANGE: -65 TO 75 Working Peak Reverse Voltage VRWM V 110 65 Average Forward Current @ HalfWave Resistive Load 60Hz IF(AV) @ TL mA °C 75 25 50 25 Forward Peak Surge Current @ 8.3mS Superimposed IFSM A 0.5 0.5 Maximum Reverse Current @ VRWM @ 25°C TL* IR uA 250* 500* Maximum Forward Voltage @ 25°C TL* IFM mA 100 5.0 VFM V 1.00 1.00 Junction Capacitance f = 1MHz, VR = 1V CJ pF 0.8 0.8 MCC Part Number Package 1N277 1N34A DO-7 * Measured at VR Micro Commercial Components
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Abstract: 1N34A 110 Package Outline Pg. A-1 25 25 0.5 0.5 250* 500* 100 5.0 1.00 1.00 0.8 0.8 65 75 50 Micro Commercial Components
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Abstract: i- Conductor ez/\f e.ur , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE:.(201) 376-2922 (212) 227-6005 TELEX: 13-8720 TYPE FEATURES 1N34A Low forward voltage drop â'"low power consumption Thirty years of proven reliability â'"one million hours mean time between failures (MTBF) Very low noise level Metallurgically bonded ABSOLUTE MAXIMUM RATINGS 65V 150ma -65°C to 85°C 80mw Peak Inverse Voltage Peak Forward Current Operating Temperature Range -
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Abstract: Germanium Diodes* DO-1 and DO-7 Cases DO-1 DO-7 TYPE WO, CASE vrrm io (mA) MAX 50 50 50 50 150 150 150 100 50 50 100 40 100 100 50 200 100 200 200 VF (Vi MAX 1.0 1.0 1.0 0.25 0.45 0.45 0.45 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 ® »F trr (n*) MAX TECHNOLOGY 00 MAX 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 '1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO New Jersey Semiconductor
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Abstract: CRIMSON SEMICONDUCTOR INC ^ DE|E5mCHb â¡ 00034e] â¡ 2514096 CRIMSON SEMICONDUCTOR INC 1 99D 00349 D f" at- o 7 ! I GERMANIUM DIODE PEAK MINIMUM MAXIMUM AVERAGE FORWARD REVERSE TYPE REVERSE F.ORWARD CURRENT CURRENT VOLTAGE CURRENT AT 1 VOLT AT25°C VOLTS mA mA //A 1N34 75 50 5 50 «t -10V 1N34A 75 50 S 30 at -10V 1N35 75 22.5 7 10 at-10V 1N36 36 16 4 100 at-25 V 1N38 100 50 4 6 at -3V 1N38A 115 50 4 500 at -100 V 1N38B 125 â'¢50 4 500 at -100V 1N43 70 40 S 800 at -50V -
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1N93
Abstract: Germanium Diodes* DO-1 and DO-7 Cases DO-1 TYPE NO. CASI DO-7 TECHNOLOGY Vr r m 10 VF @ if trr (V) (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . GOLD BONDED 50 1.0 5.0 . POINT CONTACT POINT CONTACT 1N67A DO-7 90 1N87A DO-7 23 50 0.25 1.0 . 1N91 DO-1 100 150 0.45 150 . -
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1N58A 1N48 diode diode in34a DIODE 1N54 1N34 DIODE diode 1n34 1N48 1N52A 1N54A 1N57A 1N60A
Abstract: Gold Bonded 1N34A Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications AM/FM detectors Ratio detectors FM discriminators 0.018-0.022" DO-7 Glass Package 0.458-.558 mm TV audio detectors RF input probes TV video detectors Features Lower leakage current Flat junction capacitance High mechanical strength 1.0" 25.4 mm (Min.) Length 0.230-0.30" 5.85-7.62mm Dia 0.085-.107 " -
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Abstract: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S ) r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage (volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 â'C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge Ge Ge Si 75 40 40 80 30 1.0 1.0 1.0 1.0 1.0 5.0 5.0 3.0 4.0 5.0 30 60 10 50 .10 1N270 1N277 1N695A 1N772A 1N933 Ge Ge Ge Ge * Ge 100 125 25 80 100 Micro Commercial Components
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Abstract: CRIMSON DeT| S S l M C H b ⡠⡠⡠0 3 L H S E M I C O N D U C T O R INC 2514096 CRIMSON SEMICONDUCTOR INC 99D 00349 D T-ot^o'l GERMANIUM DIODE AVERAGE F.ORW ARD CURRENT M IN IM U M FORW ARD CURRENT A T 1 V O LT M A X IM U M REVERSE CURRENT AT25°C V O LT S TYPE PEAK REVERSE VO LTAG E mA mA /'A 1N34 75 50 5 50 at -10V 1N34A 75 50 5 30 at -10V 1N35 75 22.5 7 10 at -10V 1N36 36 16 4 100 -
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1N995 1N3287 1N3483 1N3604 1N4242 1N4243
Abstract: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 VRRM (V) MAX 75 100 90 23 100 200 300 80 90 70 80 50 100 20 40 80 20 20 25 IO VF @ IF trr TECHNOLOGY (mA) (V) (mA) (ns) MAX MAX MAX 50 1.0 5.0 -
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1N63A
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