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Part Manufacturer Description Datasheet BUY
HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station visit Texas Instruments
OPA643N/3K Texas Instruments Wideband Low Distortion, High Gain Operational Amplifier 5-SOT-23 visit Texas Instruments
HFA3135IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6 visit Intersil
HFA3096B Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012-AC, MS-012AC, 16 PIN visit Intersil
HFA3096B96 Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC visit Intersil
OPA643N/250 Texas Instruments Wideband Low Distortion, High Gain Operational Amplifier 5-SOT-23 visit Texas Instruments

high gain PNP RF TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

Dual Long-Tailed Pair Transistor Array

Abstract: gilbert cell differential pair and PNP transistors with an ft of 5.5GHz. The parameter ft is a measure of the transistor's high , the amplification. This circuit nearly achieves the maximum transistor gain because the bias , RF - Q4 R2 15k Discrete transistors are hard to use because each transistor is , tailed transistor pair; a configuration often used to make voltage controlled gain and differential , Harris Semiconductor No. AN9744 Harris Linear July 1997 RF Up/Down Conversion Is
Harris Semiconductor
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Dual Long-Tailed Pair Transistor Array gilbert cell differential pair pnp 8 transistor array pnp array Transistor Array differential amplifier HFA3046 ISO9000 1-800-4-HARRIS

TRANSISTOR 30GHZ

Abstract: "vlsi technology" abstract for Process HJ: A 30 GHz NPN and 20 GHz PNP Complementary Bipolar Process for High Linearity RF , suitable for RF applications, which features high frequency NPN and PNP transistors of 30GHz and 20GHz , filters for high bandwidths. The high performance PNP of this process has been designed with comparable , transistors, lateral PNP transistors, high and low value polysilicon resistors, low value capacitors (with an , complementary process comprises a high performance NPN and a new, fully integrated PNP. The inclusion of the
Mitel Semiconductor
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TRANSISTOR 30GHZ Bipolar HJ Marconi Optical Components INTERMETal diode GEC Marconi Materials Technology

germanium transistors PNP

Abstract: IBM43RF0100 result in a transistor with high gain, low noise, exceptional linearity, and low power consumption in a , IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium (SiGe) NPN transistor , at 1.9 GHz, with a nominal gain of 12dB and a noise figure of 1.5dB at VCC = +3.0 Vdc. The RF , Noise Transistor are available. These boards allow the user to investigate high linearity and low noise , evaluation board uses PNP transistor Q2 with the diode connected PNP to function as a minimal
IBM
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germanium transistors PNP pnp germanium transistor TRANSISTOR MAKING LIST FMMT2907ATA SiGe RF TRANSISTOR SiGe PNP IBM43RF0100EV

Transistor SMD SOT363 SC70

Abstract: Transistor SMD SOT363 SC70 SC88 .), radar detectors, pagers and satellite television tuners (SATV). · · · · RF High gain Low , standard double transistor. Internally the transistors are fully isolated.The matched PNP equivalent of , ranges combine a low VCEsat PNP BISS transistor with an NPN resistor-equipped transistor (RET) to , driven by only a fraction of a mA · Lowest losses in the pass-transistor by using PNP BISS transistor , VCEsat PNP BISS transistor and NPN resistor-equipped transistor in one package · Low `threshold'
Philips Semiconductors
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BCM847BS BCM857BS Transistor SMD SOT363 SC70 Transistor SMD SOT363 SC70 SC88 TRANSISTOR SMD CODE PACKAGE SOT363 DMX DECODER IC transistor SOT363 SOT343R reset PIP212-12M PBLS15 PBLS40 P89LPC9102
Abstract: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 AN9315.1 Introduction [ /Title (AN93 15.1) /Subject (RF Amplifier Design Using HFA30 46 , the pinouts of the four different products. Typical NPN and PNP transistor characteristics are shown , . MEASURED CHARACTERISTICS OF THE HIGH GAIN LOW-NOISE AMPLIFIER 2 Application Note 9315 Wideband , amplifying transistor. LCHOKE THROUGH HOLE CBP R1 R4 R2 CBP OUTPUT HFA3096 RE R 3 CBP C1 RF C2 L1 Intersil
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HFA31 HFA3046/3096/3127/3128 800MH 2500MH 600MH

Q545

Abstract: SOI series shunt RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note , RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures , transistors on it. Figure 1 shows the pinouts of the four different products. Typical NPN and PNP transistor , FIGURE 3. MEASURED CHARACTERISTICS OF THE HIGH GAIN LOW-NOISE AMPLIFIER 2 2 Application Note , amplifying transistor Q2 for good temperature stability. CBP RF VO CBP RS RL LCHOKE + -
Intersil
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Q545 SOI series shunt rf transistors amplifier design and matching network AC 187 npn transistor TO 1 uhf amplifier design Transistor uhf transistor amplifier

900mhz-1800mhz rf frequency amplifier circuit

Abstract: uhf amplifier design Transistor RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM , on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed , and PNP transistor characteristics are shown in Table 1. 16 NC 1 13 1 2 HFA3096 Q5 , CHARACTERISTICS OF THE HIGH GAIN LOW-NOISE AMPLIFIER 3-2 Application Note 9315 Wideband Amplifier OUTPUT , the PNP transistors (Q4 and Q5) available on the HFA3096, to bias amplifying transistor Q2 for good
Intersil
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900mhz-1800mhz rf frequency amplifier circuit PNP Transistor Arrays Intersil PNP transistor 263

900mhz-1800mhz rf frequency amplifier circuit

Abstract: PNP UHF transistor PNP transistor characteristics are shown in Table 1. 16 NC 1 14 Q1 3 4 HFA3096 Q3 , THE HIGH GAIN LOW-NOISE AMPLIFIER 0 0 1 2 FREQUENCY (GHz) 3 FIGURE 3A. GAIN 10-86 , advantage of the PNP transistors (Q4 and Q5) available on the HFA3096, to bias amplifying transistor Q2 , Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046
Harris Semiconductor
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PNP UHF transistor complementary npn-pnp transistor amplifier 3 ghz NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor 900MH

rf transistors amplifier design and matching network

Abstract: silicon bipolar transistor low noise amplifier Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor , . Figure 1 shows the pinouts of the three different products. Typical NPN and PNP transistor , CHARACTERISTICS OF THE HIGH GAIN LOW-NOISE AMPLIFIER FIGURE 3A. GAIN 2 AN1503.0 Application Note , bias amplifying transistor Q2 for good temperature stability. RF VO CBP RS LCHOKE + - , amplifying transistor. R2 CBP ISL73096RH RE R 3 C1 L1 OUTPUT C3 RF CBP C2
Intersil
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silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 transistor amplifier wideband PNP monolithic Transistor Arrays 6 "transistor arrays" ic ISL73096RH/ISL73127RH/

HFA3101

Abstract: AN9744 higher cost equipment, because each transistor is limited in the power gain it can supply. Also, all of , . Some gain is lost because of this bias circuitry, so multistage transistor designs are required for all , parameter ft is a measure of the transistor's high frequency performance, and it is often unsymmetrical (NPN , maximum transistor gain because the bias stability is achieved through transistor matching rather than , transistor pair; a configuration often used to make voltage controlled gain and differential amplifier
Intersil
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HFA3101 sot36 transistor arrays 5v Transistor Arrays NPN General Purpose Transistor 825MH

p331 TRANSISTOR

Abstract: Bipolar HJ . al. "Process HJ: A 30GHz NPN and 20GHz PNP complementary bipolar process for high linearity RF , A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices , meet the challenge of future 5GHz RF communications systems we have developed a high performance , full suite of passive components. The high performance PNP of this process has been designed with , transistors, lateral PNP transistors, high and low value polysilicon resistors, low value capacitors (with an
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p331 TRANSISTOR transistor 5ghz pnp TRANSISTOR PNP 5GHz high gain PNP RF TRANSISTOR NPN transistor which has frequency greater than 2 p349 1E-06 1E-05 1E-04 1E-03 1E-02

TRANSISTOR 3F t

Abstract: transistor marking code SOT-23 BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT , Version : E11 BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal , , BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves , CURRENT Version : E11 BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves Figure 7. DC current gain as a function of
Taiwan Semiconductor
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BC858A TRANSISTOR 3F t transistor marking code SOT-23 transistor packing code 3f SOT-23 marking 050 transistor SOT-23 transistor code 3e transistor sot23 MIL-STD-202 BC856A BC856B BC857A BC857B BC857C

AN9744

Abstract: gilbert cell differential pair transistor's high frequency performance, and it is often unsymmetrical (NPN vs PNP) as shown here. There , transistor gain because the bias stability is achieved through transistor matching rather than negative , specifications imposed by higher cost equipment, because each transistor is limited in the power gain it can , for DC stability. Some gain is lost because of this bias circuitry, so multistage transistor designs , RF Up/Down Conversion Is Simplified By Linear Arrays Application Note July 1997 AN9744
Intersil
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GILBERT CELL Silicon Bipolar Transistor Q6 an-9744 9744 bipolar transistor die layout sot-36

9744

Abstract: 974-4 , while Q2 does the amplification. This circuit nearly achieves the maximum transistor gain because the , by higher cost equipment, because each transistor is limited in the power gain it can supply. Also , stability. Some gain is lost because of this bias circuitry, so multistage transistor designs are required , an ft of 5.5GHz. The parameter ft is a measure of the transistor's high frequency performance, and , tailed transistor pair; a configuration often used to make voltage controlled gain and differential
Intersil
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974-4 5.1 transistor amplifier circuit diagram HFA3102 npn 8 transistor array gilbert cell intersil quasi

gilbert cell differential pair

Abstract: HFA3101 measure of the transistor's high frequency performance, and it is often unsymmetrical (NPN vs PNP) as , specifications imposed by higher cost equipment, because each transistor is limited in the power gain it can , for DC stability. Some gain is lost because of this bias circuitry, so multistage transistor designs , transistor gain because the bias stability is achieved through transistor matching rather than negative , RF Up/Down Conversion Is Simplified By Linear Arrays ® Application Note June 2004
Intersil
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discrete transistor amplifier NPN PNP Transistor Arrays

SIGNAL PATH designer

Abstract: stabilization resistor. A simple realization using a resistively-biased PNP transistor as a current source is , of the PNP bias transistor. R 3 provides a "bleed path" for any excess bias current; R1 R2 ( 1 )* Id D1 RC + VCC + VCC + VCC RC ­ RC ­ RF CHOKE (OPTIONAL) 1 µF R3 1 µF PNP 1 µF RFIN , temperature of the emitter-to-base junction of the PNP bias transistor. For this reason, when it is included it is often realized using the E-B junction of a second PNP transistor identical to the bias
Hewlett-Packard
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SIGNAL PATH designer 5091-6489E 5965-8669E

MSA-06

Abstract: MSA-07 realization using a resistively-biased PNP transistor as a current source is shown in Figure 4. In this circuit R1 and R 2 form a resistive divider that establishes the bias point of the PNP bias transistor , Vd OUTPUT BLOCKING CAPACITOR RF CHOKE BYPASS CAPACITOR V - Vd RC = CC Id PNP V , temperature of the emitter-to-base junction of the PNP bias transistor. For this reason, when it is included it is often realized using the E-B junction of a second PNP transistor identical to the bias
Hewlett-Packard
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MSA-06 MSA-07

PNP Monolithic Transistor Pair

Abstract: SIGNAL PATH designer with a bias stabilization resistor. A simple realization using a resistively-biased PNP transistor as , establishes the bias point of the PNP bias transistor. R 3 provides a "bleed path" for any excess bias , CAPACITOR V - Vd RC = CC Id PNPRF CHOKE RFIN INPUT BLOCKING CAPACITOR MSA Figure , the voltage variation with temperature of the emitter-to-base junction of the PNP bias transistor , across R C also increases, turning off the E-B junction of the PNP transistor, and hence decreasing
Agilent Technologies
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PNP Monolithic Transistor Pair

ADA-4789

Abstract: Agilent RF amplifier SOT-89 the high frequency RF performance of the ADA-4789. The layout is shown with stencil layout , gain can be adjusted by varying Id. Rc = 0.5V Id 0.5V R2= · pnp 10·Id (Vcc - 0.5V ) - , resistors R4 and the PNP transistor connected to form a diode by connecting the base and collector together and R2 form a potential divider circuit to set the base voltage of the bias PNP transistor. The diode connected PNP transistor is used to compensate for the voltage variation with temperature of
Avago Technologies
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ADA4789 AN-S003 Agilent RF amplifier SOT-89 an5051 0805CS-681XGLC common base amplifier circuit 142-0701-881 AN-5051 AV01-0417EN

MRF542

Abstract: MRF545 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , SELECTION GUIDE 3-66 RF SMALL-SIGNAL TRANSISTORS (continued) TO-72 METAL CAN Gain- - BW Noise Figure , MRF904 4.0 15 1.5 450 5.0 16 450 15 30 200 MRF914 4.5 20 2.0 500 5.0 15 500 12 40 200 'PNP "Typ HIGH VOLTAGE RF DEVICES The devices listed below are designed for high voltage, high fj applications similar to those in medium and high resolution colour video display monitors. Gain â'" BW h â c Case
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OCR Scan
2N3866 2N3866A MM4018 2N3948 MRF207 2N5109 MRF542 MRF545 BFR90 transistor transistor bfr96 mrf544 2n4427 2N5160 2N4427
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