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Part Manufacturer Description PDF & SAMPLES
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
1N5349B Microsemi Corporation Zener Diode, 12V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
EX128-PTQG64I Microsemi Corporation Field Programmable Gate Array, 357MHz, CMOS, PQFP64, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, TQFP-64

germanium transistor ac 128

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 25C D â  fl235bQS 0DQ4Q81 5 â SIEG PNP Germanium UHF Transistor AF 280 S - SIEMENS AKTIENGESELLSCHAF - for mixer and oscillator circuits up to 900 MHz AF 280 S is a germanium PNP UHF planar transistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T0119. This transistor is particularly intended for use in mixer and oscillator circuits up to 900 MHz in diode tuned , Junction temperature T\ 90 °C Storage temperature range Tstg -30 to +75 °C Total power dissipation Ptot -
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Q62701-F88 AF280S transistor d 1557 transistor 1558 transistor IC 1557 b ML 1557 b transistor af280 1557 b transistor Q0D40
Abstract: deg C /m W 11 3 = â'" 1mA, AC 128 GERMANIUM ALLOY TRANSISTOR p-n-p Class A or Class B , AC 154 5-97 m m 0 -235irv max GERMANIUM ALLOY TRANSISTOR p-n-p Class B push-pull AF , impedance 50011 14 AC 156 GERMANIUM ALLOY TRANSISTOR p-n-p AF Amplifier or Driver b W hite , Frequency 1000c/s. Source impedance 500C! 15 AC 157 GERMANIUM ALLOY TRANSISTOR n-p-n Class B , V, = ie = 0 ) 800 m V 250 m V pF AC 165 GERMANIUM ALLOY TRANSISTOR p-n-p AF -
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AD149 NKT677 NKT612 sft353 OC171 equivalent GEX34 ac128 AC113 AC155 AC156 AC165 AC128 AC154
Abstract: NICHT FÃR NEUENTWICKLUNGEN GERMANIUM - PNP - TRANSISTOR AC 128 K für Endstufen als Transistorpaar , grd/mW Weitere Daten siehe AC 128 1) vgl. Grenzkurve -UCE R = f (ZÃE) für dIc/dUGE = 400 \iS (bei AC 128) ) Integrationszeit t = max. 20 ms 3 av ) Kurzzeitige Ãberschreitungen bis = max- 100 °C , 60 °C (i Ptot = max. 670 mW Sperrs chi chttemperatur = max. 90 °C Gleichstromverstärkung bei Uâ , Transistoren bei I ss 50 mA sowie bei I ^ 300 mA ist 1,1. VALVO TRANSISTOREN 1270 49 AC 128K NICHT FÃR -
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AC 128 pnp transistor AC128K germanium transistoren transistor ac 128 valvo valvo transistoren
Abstract: NICHT FUR NEUENTWICKLUNGEN GERMANIUM - NPN - NF - TRANSISTOR ftir Endstufen, in Verbindung mit AC 128 oder AC 132 als komplementäre9 Paar AC 127 Mechanisehe Daten; Gehäuse: Metall, JEDEC TO-1, 1 A 3 , Gesamtverlustleistung bei = 45 °C Ptot - max. 120 mW bei = 60 °C Ptot = max* 275 mW Sperrschichttenperatur - max* 90 °C Gleichstromverstttrkung bei Upà = 0, -Ig * 50 mA B 105 bei UCà - 0, -Ig = 200 mA B - 90 Transit-Frequenz bei UCB ^ 2 V, -Ig = 10 mA fT 2,5 m. Komplementäres Transistorpaar AC 127/AC 128 Das -
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transistor ac 127 AC127 germanium transistor ac 132 ac 127 transistor ac 132 germanium transistor ac 127 VX720043 127/AC
Abstract: 2N3053 2N3054,5 AC107N AC 128 AC 176 ACY17.22 ACY27.31 ACY34.36 ACY39.41 ACY44 AD 132 , NPN Silicon Microminiature Plastic Transistor T yp e Characteristics @ T am b= 25 °C Colour , c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS e) PACKAGED CIRCUITS Newmarket , Field Effect Transistors Silicon Chips Germanium Transistors CV Transistors Package Outlines , modern semiconductor technology. All Newmarket Transistor circuits use chip transistors, diodes -
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kt420 bc109 Transistor Equivalent list BC146 BSY95A CV7002 diffused alloy
Abstract: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 · High gain low noise RF transistor 4 · Provides outstanding performance for a wide range of wireless applications · Ideal for , Gold metallization for extra high reliability · 70 GHz fT - Silicon Germanium technology ESD , IC = 20 mA, VCE = 1.5 V V(BR)CEO AC characteristics (verified by random sampling , 13.6 11 8.7 6.6 25.4 18.5 17.8 15.1 12.8 11 9 0.16 0.21 0.24 0.27 0.32 0.36 0.41 Infineon Technologies
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ACS 086 4ghz s parameters transistor acs sot-343 s parameters 4ghz BFP620ACs fa 5571 VPS05605
Abstract: NICHT FÃR NEUENTWICKLUNGEN GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar AC 128 Mechanische , 127/AC 128: Das Verhältni s der Gl ei chStromverstärkungen B beider Transistoren bei I_ = 300 mA ist , NEUENTWICKLUNGEN Kennwerte: (bei - 26 °Cf sofern nicht andere angegeben) AC 128 Kollektor^Beststrom bei -ÃCT - 10 , 90 °C Gleichstromverstärkung bei Uâ"¢ = 0, Ld 300 mA B = 90 bei UCB = 0, JE = 1 A B 80 -
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transistor AC128 AC128 transistor ac128 pnp ac128 germanium germanium transistor ac128 valvo transistor
Abstract: the transistor electrodes. Dynamic characteristics are obtained with an ac voltage on one electrode , of 49 microamperes (147-98) in the collector current. Thus the ac beta for the transistor is 49 , RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with , RCA TYPIC A L S E M I C O NID U C T O IR DUCTO DEVICES Tunnel Diode ft Transistor RCA Transistor M anual MATERIALS, JUNCTIONS, AND DEVICES S E M IC O N D U C TO R devices are -
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rca case outlines rca transistor manual 2N140 2N1637 transistor rca 2N301 diode 1N539
Abstract: RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-4500 MHz, Silicon Germanium Cascadeable Gain Block , Output P1dB Input Return Loss Reverse Isolation Noise Figure 12.8 9.5 -1.5 12.7 17.4 4.6 dB , Noise Figure 12.7 9.4 -1.8 12.8 17.6 4.7 dB dBm dBm dB dB dB 1950 MHz Gain Output , Lchoke AC Blocki ng 68 nH 33 nH 22 nH 18 nH 522 Almanor Ave., Sunnyvale, CA 94085 Stanford Microdevices
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SGA-0163 marking g45 1950MH EDS-101494
Abstract: RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-2500 MHz, Silicon Germanium Cascadeable Gain Block , 2400 MHz dB m dB m dB m 15.0 12.8 11.6 IP3 Thi rd Order Intercept Poi nt Power out per , 20.2 26.2 12.8 19.9 24.5 2.4 dB dBm dBm dB dB dB 2400 MHz Gain Output IP3 Output , 1 uF 1 uF 1 uF C d2 D ecoupli ng 100 pF 68 pF 22 pF 22 pF Lchoke AC Stanford Microdevices
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SGA-4563 marking A45 marking A45 RF TRANSISTOR 726 EDS-101803
Abstract: % M Jf â'¢i â  a 0 if 2 f A F125 Germanium p-n-p alloy-diffused transistor. For , \2 â'™t l ,4 -2 0 10 60 I 0/ - Germanium p-n-p alloy-diffused transistor , Germanium p-n-p mesa transistor. For use! as a mixer/oscillator at frequencies up to| 860 MHz , MHzj 11 5 dB 7 dB Germanium p-n-p alloy-diffused transistor] For use as a mixer , 6 dB pF Germanium p-n-p alloy-diffused transistor. For use as a large signal i.f -
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BY164 TCA160 Mullard C296 TAA700 TAA310A TBA480 AC187 BC157 BC158 BC159 BC186 BC187
Abstract: AFY16 PNP Transistor for RF-application up to 900 MHz The AFY16 is a germanium PNP RF mesa transistor in a case 18A4DIN41876 (TO-72). The terminals are electrically insulated from the case. The AFY16 , -'c 10 mA Emitter current h 11 mA Base current 1 mA Junction temperature T, 90 °C Storage temperature h -55 to +75 °C Total power dissipation (7"case^45 °C) Ptot 112 mW Thermal resistance , "amb=25 °C) For the test conditions stated below, the following data apply: -Vce -I c -I* />FE -^BE V mA -
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21b22 71lb Germanium Transistor Q60106 500HA 100HA
Abstract: BFR740L3RH NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor · , , Gma = 15 dB at 6 GHz · Gold metallization for extra high reliability · 150 GHz fT-Silicon Germanium , Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling , (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 3.84 e-13 400 1.586 1.28 1.5 1.69 0.22 Infineon Technologies
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BFR705L3RH RF NPN POWER TRANSISTOR C 10-12 GHZ BFR740L3
Abstract: BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor · Provides , reliability · 150 GHz fT-Silicon Germanium technology · Pb-free (RoHS compliant) package 1) · Qualified , Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC , Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 384.4 400 1.586 1.28 1.5 1.69 220 2.1 290 550 13 180 910 1 aA V V Infineon Technologies
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BFP740 SPICE MODEL
Abstract: BFP740F NPN Silicon Germanium RF Transistor â'¢ High gain ultra low noise RF transistor 3 â , Direction of Unreeling â'¢ 150 GHz fT-Silicon Germanium technology â'¢ Pb-free (RoHS compliant) package , Characteristics at TA = 25° unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC , 2007-04-20 3 BFP740F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip , 384.4 400 1.586 1.28 1.5 1.69 220 2.1 290 550 13 180 910 aA V V - 1 - BF = Infineon Technologies
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Abstract: BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · , metallization for extra high reliability · 150 GHz fT-Silicon Germanium technology · Pb-free (RoHS compliant , °C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics , Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 384.4 400 1.586 1.28 1.5 Infineon Technologies
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BFP740 equivalent BGA420
Abstract: BFP740F NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · , Direction of Unreeling · 150 GHz fT-Silicon Germanium technology · Pb-free (RoHS compliant) package 1 , °C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics , Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 384.4 400 1.586 1.28 1.5 Infineon Technologies
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160 germanium transistor BFP420F LBC* MARKING
Abstract: BFR740L3RH NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor · , Germanium technology · Extremly small and flat leadless package, height 0.32 mm max. ESD (Electrostatic , specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling , CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 3.84 e-13 400 1.586 1.28 1.5 1.69 0.22 , Ccb_chip Cbc_chip Rbb_pack Lbb_chip B Transistor Model C Lcc_chip Lcc_pack Rcs_chip Infineon Technologies
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WLAN chip
Abstract: BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · Provides outstanding performance for 2 4 a wide range of wireless applications 1 up to 10 , metallization for extra high reliability · 150 GHz fT-Silicon Germanium technology ESD (Electrostatic , Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling , CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 384.4 400 1.586 1.28 1.5 1.69 220 2.1 Infineon Technologies
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Abstract: BFP740F NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · Provides outstanding performance for 2 4 1 a wide range of wireless applications up to 10 GHz , Unreeling · 150 GHz fT-Silicon Germanium technology ESD (Electrostatic discharge) sensitive device , . typ. max. AC Characteristics (verified by random sampling) Transition frequency fT - 42 - , MJS = XTI = AF = 384.4 400 1.586 1.28 1.5 1.69 220 2.1 290 550 13 180 910 aA V V Infineon Technologies
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