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germanium transistor ac 128

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Abstract: 25C D ■ fl235bQS 0DQ4Q81 0DQ4Q81 5 ■SIEG PNP Germanium UHF Transistor AF 280 S - SIEMENS AKTIENGESELLSCHAF - for mixer and oscillator circuits up to 900 MHz AF 280 S is a germanium PNP UHF planar transistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T0119 T0119. This transistor is particularly intended for use in mixer and oscillator circuits up to 900 MHz in diode tuned , Junction temperature T\ 90 °C Storage temperature range Tstg -30 to +75 °C Total power dissipation Ptot ... OCR Scan
datasheet

2 pages,
44.58 Kb

power germanium transistor pnp AF280S Germanium power 900 mhz germanium diode AF 280 S transistor 1557 b Q62701-F88 1557 b transistor af280 germanium transistor ac 128 ML 1557 b transistor transistor IC 1557 b transistor 1558 0DQ4Q81 T0119 transistor d 1557 0DQ4Q81 T0119 0DQ4Q81 0DQ4Q81 T0119 T0119 TEXT
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Abstract: deg C /m W 11 3 = — 1mA, AC 128 GERMANIUM ALLOY TRANSISTOR p-n-p Class A or Class B , AC 154 5-97 m m 0 -235irv max GERMANIUM ALLOY TRANSISTOR p-n-p Class B push-pull AF , impedance 50011 14 AC 156 GERMANIUM ALLOY TRANSISTOR p-n-p AF Amplifier or Driver b W hite , Frequency 1000c/s. Source impedance 500C! 15 AC 157 GERMANIUM ALLOY TRANSISTOR n-p-n Class B , V, = ie = 0 ) 800 m V 250 m V pF AC 165 GERMANIUM ALLOY TRANSISTOR p-n-p AF ... OCR Scan
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pages,
0 Kb

sft353 OC81D NKT612 mullard germanium Germanium Diode aa119 diode BY100 CG60 af124 TEXT
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Abstract: NICHT FÜR NEUENTWICKLUNGEN GERMANIUM - PNP - TRANSISTOR AC 128 K für Endstufen als Transistorpaar , grd/mW Weitere Daten siehe AC 128 1) vgl. Grenzkurve -UCE R = f (ZßE) für dIc/dUGE = 400 \iS (bei AC 128) ) Integrationszeit t = max. 20 ms 3 av ) Kurzzeitige Überschreitungen bis = max- 100 °C , 60 °C (i Ptot = max. 670 mW Sperrs chi chttemperatur = max. 90 °C Gleichstromverstärkung bei Uâ , Transistoren bei I ss 50 mA sowie bei I ^ 300 mA ist 1,1. VALVO TRANSISTOREN 1270 49 AC 128K NICHT FÜR ... OCR Scan
datasheet

2 pages,
26.55 Kb

VALVO 128k valvo transistor VALVO ac ac 128 transistor valvo transistoren germanium AC 128 valvo germanium valvo transistoren valvo transistor ac 128 germanium transistoren AC 128 pnp transistor germanium transistor ac 128 TEXT
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Abstract: NICHT FUR NEUENTWICKLUNGEN GERMANIUM - NPN - NF - TRANSISTOR ftir Endstufen, in Verbindung mit AC 128 oder AC 132 als komplementäre9 Paar AC 127 Mechanisehe Daten; Gehäuse: Metall, JEDEC TO-1, 1 A 3 , Gesamtverlustleistung bei = 45 °C Ptot - max. 120 mW bei = 60 °C Ptot = max* 275 mW Sperrschichttenperatur - max* 90 °C Gleichstromverstttrkung bei Upß = 0, -Ig * 50 mA B 105 bei UCß - 0, -Ig = 200 mA B - 90 Transit-Frequenz bei UCB ^ 2 V, -Ig = 10 mA fT 2,5 m. Komplementäres Transistorpaar AC 127/AC 128 Das ... OCR Scan
datasheet

4 pages,
58.95 Kb

valvo transistor VALVO ac valvo germanium germanium transistor ac 127 transistor ac 128 transistor ac 132 ac 127 germanium transistor ac 132 valvo transistoren valvo transistor ac 127 germanium transistor ac 128 TEXT
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Abstract: 2N3053 2N3053 2N3054 2N3054,5 AC107N AC107N AC 128 AC 176 ACY17 ACY17.22 ACY27 ACY27.31 ACY34 ACY34.36 ACY39 ACY39.41 ACY44 ACY44 AD 132 , NPN Silicon Microminiature Plastic Transistor T yp e Characteristics @ T am b= 25 °C Colour , c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS e) PACKAGED CIRCUITS Newmarket , Field Effect Transistors Silicon Chips Germanium Transistors CV Transistors Package Outlines , modern semiconductor technology. All Newmarket Transistor circuits use chip transistors, diodes ... OCR Scan
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TEXT
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Abstract: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 · High gain low noise RF transistor 4 · Provides outstanding performance for a wide range of wireless applications · Ideal for , Gold metallization for extra high reliability · 70 GHz fT - Silicon Germanium technology ESD , IC = 20 mA, VCE = 1.5 V V(BR)CEO AC characteristics (verified by random sampling , 13.6 11 8.7 6.6 25.4 18.5 17.8 15.1 12.8 11 9 0.16 0.21 0.24 0.27 0.32 0.36 0.41 ... Infineon Technologies
Original
datasheet

8 pages,
136.89 Kb

TRANSISTOR NPN 5GHz transistor k 620 transistor bf 254 SOT 343 MARKING BF 620 sot-343 fa 5571 s parameters 4ghz acs sot-343 4ghz s parameters transistor germanium transistor ac 128 ACS 086 TEXT
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Abstract: NICHT FÜR NEUENTWICKLUNGEN GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar AC 128 Mechanische , 127/AC 128: Das Verhältni s der Gl ei chStromverstärkungen B beider Transistoren bei I_ = 300 mA ist , NEUENTWICKLUNGEN Kennwerte: (bei - 26 °Cf sofern nicht andere angegeben) AC 128 Kollektor^Beststrom bei -ÜCT - 10 , 90 °C Gleichstromverstärkung bei U™ = 0, Ld 300 mA B = 90 bei UCB = 0, JE = 1 A B 80 ... OCR Scan
datasheet

4 pages,
59.78 Kb

germanium transistoren VALVO MHZ valvo ac128 germanium ac128 AC 128 pnp transistor AC 127 transistor ac 128 AC128 Ge valvo transistor ac128 valvo transistor germanium transistor ac128 ac128 germanium valvo ac128 pnp valvo transistoren germanium transistor ac 128 AC128 transistor transistor AC128 AC128 TEXT
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Abstract: the transistor electrodes. Dynamic characteristics are obtained with an ac voltage on one electrode , of 49 microamperes (147-98) in the collector current. Thus the ac beta for the transistor is 49 , RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with , RCA TYPIC A L S E M I C O NID U C T O IR DUCTO DEVICES Tunnel Diode ft Transistor RCA Transistor M anual MATERIALS, JUNCTIONS, AND DEVICES S E M IC O N D U C TO R devices are ... OCR Scan
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0 Kb

rca transistor manual rca case outlines TEXT
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Abstract: RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-4500 DC-4500 MHz, Silicon Germanium Cascadeable Gain Block , Output P1dB Input Return Loss Reverse Isolation Noise Figure 12.8 9.5 -1.5 12.7 17.4 4.6 dB , Noise Figure 12.7 9.4 -1.8 12.8 17.6 4.7 dB dBm dBm dB dB dB 1950 MHz Gain Output , Lchoke AC Blocki ng 68 nH 33 nH 22 nH 18 nH 522 Almanor Ave., Sunnyvale, CA 94085 ... Stanford Microdevices
Original
datasheet

5 pages,
255.02 Kb

SGA-0163 germanium transistor ac 128 marking g45 TEXT
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Abstract: RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-2500 DC-2500 MHz, Silicon Germanium Cascadeable Gain Block , 2400 MHz dB m dB m dB m 15.0 12.8 11.6 IP3 Thi rd Order Intercept Poi nt Power out per , 20.2 26.2 12.8 19.9 24.5 2.4 dB dBm dBm dB dB dB 2400 MHz Gain Output IP3 Output , 1 uF 1 uF 1 uF C d2 D ecoupli ng 100 pF 68 pF 22 pF 22 pF Lchoke AC ... Stanford Microdevices
Original
datasheet

5 pages,
261.94 Kb

TRANSISTOR 726 SGA-4563 marking A45 RF germanium transistor ac 128 marking A45 TEXT
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incorporation of germanium into the base region of the transistor opens up new avenues to the device implanted process. The cutoff frequency f T , a key figure of merit of a transistor in MAX2323 MAX2323 is the performance of ICs. The reader can look at tables below that give details of DC and AC uA AC Electrical Characteristics (MAX2323/2325 MAX2323/2325 -7dBm, LOW = 0V, HIGH = V CC , unless otherwise noted.) AC performance is measured on
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