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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

germanium transistor ac 128

Catalog Datasheet MFG & Type PDF Document Tags

transistor d 1557

Abstract: transistor 1558 25C D â  fl235bQS 0DQ4Q81 5 â SIEG PNP Germanium UHF Transistor AF 280 S - SIEMENS AKTIENGESELLSCHAF - for mixer and oscillator circuits up to 900 MHz AF 280 S is a germanium PNP UHF planar transistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T0119. This transistor is particularly intended for use in mixer and oscillator circuits up to 900 MHz in diode tuned , Junction temperature T\ 90 °C Storage temperature range Tstg -30 to +75 °C Total power dissipation Ptot
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Q62701-F88 AF280S transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 af280 ML 1557 b transistor Q0D40

NKT677

Abstract: OC171 equivalent deg C /m W 11 3 = â'" 1mA, AC 128 GERMANIUM ALLOY TRANSISTOR p-n-p Class A or Class B , AC 154 5-97 m m 0 -235irv max GERMANIUM ALLOY TRANSISTOR p-n-p Class B push-pull AF , impedance 50011 14 AC 156 GERMANIUM ALLOY TRANSISTOR p-n-p AF Amplifier or Driver b W hite , Frequency 1000c/s. Source impedance 500C! 15 AC 157 GERMANIUM ALLOY TRANSISTOR n-p-n Class B , V, = ie = 0 ) 800 m V 250 m V pF AC 165 GERMANIUM ALLOY TRANSISTOR p-n-p AF
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AD149 NKT677 OC171 equivalent NKT612 ac128 GEX34 AC113 AC155 AC156 AC165 AC128 AC154

germanium transistor ac 128

Abstract: AC 128 pnp transistor NICHT FÃR NEUENTWICKLUNGEN GERMANIUM - PNP - TRANSISTOR AC 128 K für Endstufen als Transistorpaar , grd/mW Weitere Daten siehe AC 128 1) vgl. Grenzkurve -UCE R = f (ZÃE) für dIc/dUGE = 400 \iS (bei AC 128) ) Integrationszeit t = max. 20 ms 3 av ) Kurzzeitige Ãberschreitungen bis = max- 100 °C , 60 °C (i Ptot = max. 670 mW Sperrs chi chttemperatur = max. 90 °C Gleichstromverstärkung bei Uâ , Transistoren bei I ss 50 mA sowie bei I ^ 300 mA ist 1,1. VALVO TRANSISTOREN 1270 49 AC 128K NICHT FÃR
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AC 128 pnp transistor AC128K germanium transistoren transistor ac 128 valvo valvo transistoren

germanium transistor ac 128

Abstract: transistor ac 127 NICHT FUR NEUENTWICKLUNGEN GERMANIUM - NPN - NF - TRANSISTOR ftir Endstufen, in Verbindung mit AC 128 oder AC 132 als komplementäre9 Paar AC 127 Mechanisehe Daten; Gehäuse: Metall, JEDEC TO-1, 1 A 3 , Gesamtverlustleistung bei = 45 °C Ptot - max. 120 mW bei = 60 °C Ptot = max* 275 mW Sperrschichttenperatur - max* 90 °C Gleichstromverstttrkung bei Upà = 0, -Ig * 50 mA B 105 bei UCà - 0, -Ig = 200 mA B - 90 Transit-Frequenz bei UCB ^ 2 V, -Ig = 10 mA fT 2,5 m. Komplementäres Transistorpaar AC 127/AC 128 Das
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transistor ac 127 AC127 germanium transistor ac 132 ac 127 transistor ac 132 germanium transistor ac 127 VX720043 127/AC

kt420

Abstract: bc109 Transistor Equivalent list 2N3053 2N3054,5 AC107N AC 128 AC 176 ACY17.22 ACY27.31 ACY34.36 ACY39.41 ACY44 AD 132 , NPN Silicon Microminiature Plastic Transistor T yp e Characteristics @ T am b= 25 °C Colour , c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS e) PACKAGED CIRCUITS Newmarket , Field Effect Transistors Silicon Chips Germanium Transistors CV Transistors Package Outlines , modern semiconductor technology. All Newmarket Transistor circuits use chip transistors, diodes
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kt420 bc109 Transistor Equivalent list BCY70 BSY95A BC146 diffused alloy

ACS 086

Abstract: germanium transistor ac 128 BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 · High gain low noise RF transistor 4 · Provides outstanding performance for a wide range of wireless applications · Ideal for , Gold metallization for extra high reliability · 70 GHz fT - Silicon Germanium technology ESD , IC = 20 mA, VCE = 1.5 V V(BR)CEO AC characteristics (verified by random sampling , 13.6 11 8.7 6.6 25.4 18.5 17.8 15.1 12.8 11 9 0.16 0.21 0.24 0.27 0.32 0.36 0.41
Infineon Technologies
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ACS 086 acs sot-343 4ghz s parameters transistor s parameters 4ghz silicon rf transistor s parameters up to 4ghz transistor k 620 VPS05605

AC128

Abstract: transistor AC128 NICHT FÃR NEUENTWICKLUNGEN GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar AC 128 Mechanische , 127/AC 128: Das Verhältni s der Gl ei chStromverstärkungen B beider Transistoren bei I_ = 300 mA ist , NEUENTWICKLUNGEN Kennwerte: (bei - 26 °Cf sofern nicht andere angegeben) AC 128 Kollektor^Beststrom bei -ÃCT - 10 , 90 °C Gleichstromverstärkung bei Uâ"¢ = 0, Ld 300 mA B = 90 bei UCB = 0, JE = 1 A B 80
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transistor AC128 AC128 transistor ac128 pnp ac128 germanium germanium transistor ac128 valvo transistor

rca transistor manual

Abstract: rca case outlines the transistor electrodes. Dynamic characteristics are obtained with an ac voltage on one electrode , of 49 microamperes (147-98) in the collector current. Thus the ac beta for the transistor is 49 , RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with , RCA TYPIC A L S E M I C O NID U C T O IR DUCTO DEVICES Tunnel Diode ft Transistor RCA Transistor M anual MATERIALS, JUNCTIONS, AND DEVICES S E M IC O N D U C TO R devices are
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rca transistor manual rca case outlines 2n173 2N1637 transistor rca 2N301 diode 1N539

marking g45

Abstract: germanium transistor ac 128 RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-4500 MHz, Silicon Germanium Cascadeable Gain Block , Output P1dB Input Return Loss Reverse Isolation Noise Figure 12.8 9.5 -1.5 12.7 17.4 4.6 dB , Noise Figure 12.7 9.4 -1.8 12.8 17.6 4.7 dB dBm dBm dB dB dB 1950 MHz Gain Output , Lchoke AC Blocki ng 68 nH 33 nH 22 nH 18 nH 522 Almanor Ave., Sunnyvale, CA 94085
Stanford Microdevices
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SGA-0163 marking g45 1950MH EDS-101494

marking A45

Abstract: germanium transistor ac 128 RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-2500 MHz, Silicon Germanium Cascadeable Gain Block , 2400 MHz dB m dB m dB m 15.0 12.8 11.6 IP3 Thi rd Order Intercept Poi nt Power out per , 20.2 26.2 12.8 19.9 24.5 2.4 dB dBm dBm dB dB dB 2400 MHz Gain Output IP3 Output , 1 uF 1 uF 1 uF C d2 D ecoupli ng 100 pF 68 pF 22 pF 22 pF Lchoke AC
Stanford Microdevices
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SGA-4563 marking A45 marking A45 RF TRANSISTOR 726 EDS-101803

BY164

Abstract: TCA160 % M Jf â'¢i â  a 0 if 2 f A F125 Germanium p-n-p alloy-diffused transistor. For , \2 â'™t l ,4 -2 0 10 60 I 0/ - Germanium p-n-p alloy-diffused transistor , Germanium p-n-p mesa transistor. For use! as a mixer/oscillator at frequencies up to| 860 MHz , MHzj 11 5 dB 7 dB Germanium p-n-p alloy-diffused transistor] For use as a mixer , 6 dB pF Germanium p-n-p alloy-diffused transistor. For use as a large signal i.f
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BY164 TCA160 Mullard C296 TAA310A TAA700 PCC88 AC187 BC157 BC158 BC159 BC186 BC187

AFY16

Abstract: 21b22 AFY16 PNP Transistor for RF-application up to 900 MHz The AFY16 is a germanium PNP RF mesa transistor in a case 18A4DIN41876 (TO-72). The terminals are electrically insulated from the case. The AFY16 , -'c 10 mA Emitter current h 11 mA Base current 1 mA Junction temperature T, 90 °C Storage temperature h -55 to +75 °C Total power dissipation (7"case^45 °C) Ptot 112 mW Thermal resistance , "amb=25 °C) For the test conditions stated below, the following data apply: -Vce -I c -I* />FE -^BE V mA
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21b22 71lb Germanium Transistor Q60106 500HA 100HA

germanium transistor ac 128

Abstract: BFR740L3RH BFR740L3RH NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor · , , Gma = 15 dB at 6 GHz · Gold metallization for extra high reliability · 150 GHz fT-Silicon Germanium , Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling , (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 3.84 e-13 400 1.586 1.28 1.5 1.69 0.22
Infineon Technologies
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RF NPN POWER TRANSISTOR C 10-12 GHZ BFR705L3RH BFR740L3

BFP740 SPICE MODEL

Abstract: BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor · Provides , reliability · 150 GHz fT-Silicon Germanium technology · Pb-free (RoHS compliant) package 1) · Qualified , Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC , Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 384.4 400 1.586 1.28 1.5 1.69 220 2.1 290 550 13 180 910 1 aA V V
Infineon Technologies
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BFP740 SPICE MODEL
Abstract: BFP740F NPN Silicon Germanium RF Transistor â'¢ High gain ultra low noise RF transistor 3 â , Direction of Unreeling â'¢ 150 GHz fT-Silicon Germanium technology â'¢ Pb-free (RoHS compliant) package , Characteristics at TA = 25° unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC , 2007-04-20 3 BFP740F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip , 384.4 400 1.586 1.28 1.5 1.69 220 2.1 290 550 13 180 910 aA V V - 1 - BF = Infineon Technologies
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BFP740 SPICE MODEL

Abstract: BFP740 equivalent BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · , metallization for extra high reliability · 150 GHz fT-Silicon Germanium technology · Pb-free (RoHS compliant , °C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics , Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 384.4 400 1.586 1.28 1.5
Infineon Technologies
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BFP740 equivalent BGA420

RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: LBC* MARKING BFP740F NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · , Direction of Unreeling · 150 GHz fT-Silicon Germanium technology · Pb-free (RoHS compliant) package 1 , °C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics , Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 384.4 400 1.586 1.28 1.5
Infineon Technologies
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LBC* MARKING BFP420F 160 germanium transistor

germanium transistor ac 128

Abstract: WLAN chip BFR740L3RH NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor · , Germanium technology · Extremly small and flat leadless package, height 0.32 mm max. ESD (Electrostatic , specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling , CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 3.84 e-13 400 1.586 1.28 1.5 1.69 0.22 , Ccb_chip Cbc_chip Rbb_pack Lbb_chip B Transistor Model C Lcc_chip Lcc_pack Rcs_chip
Infineon Technologies
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WLAN chip

BFP740 SPICE MODEL

Abstract: BFP740 equivalent BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · Provides outstanding performance for 2 4 a wide range of wireless applications 1 up to 10 , metallization for extra high reliability · 150 GHz fT-Silicon Germanium technology ESD (Electrostatic , Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling , CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 384.4 400 1.586 1.28 1.5 1.69 220 2.1
Infineon Technologies
Original

germanium transistor ac 128

Abstract: BFP420F BFP740F NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · Provides outstanding performance for 2 4 1 a wide range of wireless applications up to 10 GHz , Unreeling · 150 GHz fT-Silicon Germanium technology ESD (Electrostatic discharge) sensitive device , . typ. max. AC Characteristics (verified by random sampling) Transition frequency fT - 42 - , MJS = XTI = AF = 384.4 400 1.586 1.28 1.5 1.69 220 2.1 290 550 13 180 910 aA V V
Infineon Technologies
Original
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