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germanium diodes

Catalog Datasheet Results Type PDF Document Tags
Abstract: Germanium Diodes Page Point Contact & Gold Bonded (DO-1 & DO-7) 118 117 ... OCR Scan
datasheet

1 pages,
4.72 Kb

germanium diodes datasheet abstract
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Abstract: Germanium Diodes Page Point Contact & Gold Bonded (DO-1 & DO-7) 118 117 ... OCR Scan
datasheet

1 pages,
6.65 Kb

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Abstract: 0A86 OA86C OA86C GERMANIUM DIODES Germanium diodes in all glass construction for use in computers. ratings (Limiting values) Tamb = 25 °c Tamb = 60 °c Reverse voltage VR max. 60 V 60 V Peak reverse voltage -VRM max. 90 V 90 V Forward current IF max. 35 mA 15 mA Peak forward current IFM max .,150 mA 150 mA characteristics Forward voltage Ip = 5 mA Vp typ 0.78 V typ 0.72 V 0.6 tò 1 V 0.5 to 0.95 V Ip = 30 mA Vf typ 2.15 V typ 1.9 V 1.5 to 3 V 1.3 to 2.8 V Reverse current ... OCR Scan
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1 pages,
29.49 Kb

0A86 OA86C germanium diodes OA86 OA86C abstract
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Abstract: Table off Contents Page Index / Cross Reference Surface Mounted Devices Small Signal Transistors Power Transistors Junction FETs Silicon Diodes Germanium Diodes Zener Diodes Current Limiting Diodes Rectifiers Bridge Rectifiers Thyristors Mechanical Drawings Engineering Specifications 2 47 65 93 109 113 117 119 135 157 173 185 201 227 ... OCR Scan
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1 pages,
13.64 Kb

power transistors cross reference datasheet abstract
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Abstract: Table of Contents Page Index / Cross Reference Surface Mounted Devices Small Signal Transistors Power Transistors Junction FETs Silicon Diodes Germanium Diodes Zener Diodes Current Limiting Diodes Rectifiers Bridge Rectifiers Thyristors Mechanical Drawings Engineering Specifications 2 47 65 93 109 113 117 119 135 157 173 185 201 227 ... OCR Scan
datasheet

1 pages,
12.48 Kb

germanium diodes datasheet abstract
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Abstract: Table off Contents N Index / Cross Reference Surface Mounted Devices Small Signal Transistors Power Transistors Junction FETs Silicon Diodes Germanium Diodes Zener Diodes Transient Voltage Suppressors (TVS) Current Limiting Diodes Rectifiers Chip Form For Hybrid Applications Bridge Rectifiers Thyristors Mechanical Drawings Engineering Specifications Page 2 47 65 93 109 113 117 119 130 135 157 171 173 185 201 227 ... OCR Scan
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1 pages,
16.37 Kb

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Abstract: Germanium Diodes P age Point C ontact & Gold B onded (DO-1 & DO-7) 118 117 ... OCR Scan
datasheet

1 pages,
4.53 Kb

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Abstract: Tungsten point contact germanium diodes • General purpose Diodes de signal au germanium à pointe tungstène - Usage généraI Type Case vr Io Vf / ,F ir / Vr |r / Vr / Tamb drs 75 Boîtier (v) if* (VI / (mai (mai / (V) iMai / ' (V) / l°c) page max imai max / max max max 1n 34 do 7 50 30 1 5 30 10 # in 48 do 7 70 50 1 4 830 60 221 1n 54 a do 7 60 30 1 5 7 10 100 , Tungsten point contact germanium diodes • Switching Tamb 25 °C Diodes de signai au germanium à pointe ... OCR Scan
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1 pages,
35.8 Kb

germanium diodes datasheet abstract
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Abstract: MCC GERMANIUM DIODES OPERATING/STORAGE TEMPERATURE RANGE: -65 TO 75 Working Peak Reverse Voltage VRWM V 110 65 Average Forward Current @ HalfWave Resistive Load 60Hz IF(AV) @ TL mA °C 75 25 50 25 Forward Peak Surge Current @ 8.3mS Superimposed IFSM A 0.5 0.5 Maximum Reverse Current @ VRWM @ 25°C TL* IR µA 250* 500* Maximum Forward Voltage @ 25°C TL* IFM mA 100 5.0 VFM V 1.00 1.00 Junction Capacitance f = 1MHz, VR = 1V CJ pF 0.8 0.8 MCC Part Number Package 1N277 1N277 1N34A 1N34A DO-7 * Measured at VR ... Original
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1 pages,
18.63 Kb

1n34a 1N277 1N34A 1N277 abstract
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Abstract: DO 7 (CB 26) Tungsten point contact germanium diodes - Detection Tamb 25 °C Diodes de signa1 au germanium à pointe tungstène - Détection Type Case Boîtier VR IV) max io (mAI max Vf IV) / max / 'f ImA) ir , Tungsten point contact germanium diodes - Video Detection Diodes de signai au germanium è pointe tungstène , 5 220 25 25 # Gold bounded germanium signal diodes • High current switching Diodes de signai au germanium à pointe or. Commutation fort courant Tamb 25 °C Type Case Vr io VF 'F |r / Vr ir Vr / Tamb Vr ... OCR Scan
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1 pages,
32.81 Kb

AA 119 AAY 45 germanium diod Germanium germanium diodes datasheet abstract
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devices. The genealogy of the adoption of solid state devices goes something like this: selenium diodes begot germanium diodes, which in turn begot silicon diodes, which then resulted in commercial
www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd000c9.htm
International Rectifier 20/08/1999 15.89 Kb HTM wcd000c9.htm
devices. The genealogy of the adoption of solid state devices goes something like this: selenium diodes begot germanium diodes, which in turn begot silicon diodes, which then resulted in commercial
www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd000ae.htm
International Rectifier 06/10/1998 16.02 Kb HTM wcd000ae.htm
germanium or Schottky diodes. These have significantly lower forward voltages (germanium: V f = 0.3 V, Schottky: V f = 0.4 V). Germanium diodes are seldom used at the present time, have high-leakage diodes are often employed. Zener diodes seem to be an obvious choice for this function. Unfortunately analog-to-digital converter may be reduced. The preferred use of Schottky diodes proves similarly inadequate. The continuous current of 5 mA in the clamping diodes. The danger of component destruction as a result of
www.datasheetarchive.com/files/texas-instruments/data/html/slaa004.htm
Texas Instruments 31/05/1997 18.5 Kb HTM slaa004.htm
Powermite Products Diodes EPSM/MMSM Packages BiPolar RF Transistors Diodes Rectifiers BiPolar RF Transistors PIN Diodes Rectifiers Schottkys PIN Diodes Varactors Schottkys Solar Panel Diodes Varactors RF Schottkys Signal Diodes Germanium
www.datasheetarchive.com/files/microsemi/overview.htm
Microsemi 09/12/1999 10.88 Kb HTM overview.htm
Wired Communica Wireless Commun AF Diodes AF Transistors RF Diodes RF Transistors NPN Silicon Germanium RF Transistor, high gain low noise RF transistor
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1757.htm
Infineon 26/10/2000 27.79 Kb HTM pro~1757.htm
acts as an insulator. The most common semiconductor materials are silicon and germanium. Silicon much higher temperatures than germanium. These materials can either be used in their pure electrons. Such devices include diodes, transistors, logic devices, integrated circuits, voltage Zener diode. It can be used to regulate the voltage in a circuit. Semiconductor diodes can be designed to have a variety of characteristics. Light-sensitive or photosensitive diodes can be used
www.datasheetarchive.com/files/maplin/help/howto/ic4.htm
Maplin 21/02/2002 8.29 Kb HTM ic4.htm
Colorado, supplies high-power Schottky diodes and rectifiers primarily to the commercial markets. , MA. BKC is a manufacturer of military and space qualified zeners, rectifiers, and germanium devices.
www.datasheetarchive.com/files/microsemi/company/history-v1.htm
Microsemi 23/11/1998 2.92 Kb HTM history-v1.htm
high-power Schottky diodes and rectifiers primarily to the commercial markets. Also in 1987 the is a manufacturer of military and space qualified zeners, rectifiers, and germanium devices.
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Microsemi 18/11/1999 2.95 Kb HTM history.htm
Angeles November 1954 Germanium rectifiers introduced August 1957 International Rectifier Corp., Japan Ltd. founded June 1958 Solar cells and zener diodes introduced September 1995 IR Introduces Plastic Input 800-1600V Rectifier Diodes October 1995 IR Introduces 60V MER Moat Process Yields Standard Recovery Diodes in Plastic SMT Packages for The First Time IR MOS devices account for nearly three-quarters of IR's revenues. Silicon rectifiers and Schottky diodes
www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd000a7.htm
International Rectifier 06/10/1998 15.63 Kb HTM wcd000a7.htm
Angeles November 1954 Germanium rectifiers introduced August 1957 International Rectifier Corp., Japan Ltd. founded June 1958 Solar cells and zener diodes introduced September 1995 IR Introduces Plastic Input 800-1600V Rectifier Diodes October 1995 IR Introduces 60V MER Moat Process Yields Standard Recovery Diodes in Plastic SMT Packages for The First Time IR die-to-footprint ratio and sturdy connectivity for diodes in high-current environments. June 1998
www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd000c2.htm
International Rectifier 20/08/1999 17.38 Kb HTM wcd000c2.htm