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DRIVECABLE02EVK Texas Instruments DS15BA101 DS15EA101 Cable Extender Chipset Evaluation Kit visit Texas Instruments
TPS2848PWP Texas Instruments Fast, Synchronous-Buck MOSFET Drivers With 8V Drive Regulator 14-HTSSOP visit Texas Instruments Buy
TPS2849PWP Texas Instruments Fast, Synchronous-Buck MOSFET Drivers With 8V Drive Regulator 14-HTSSOP visit Texas Instruments Buy
ISL78200AVEZ Intersil Corporation 2.5A Regulator with Integrated High-Side MOSFET for Synchronous Buck or Boost Buck Converter; TSSOP20; Temp Range: -40° to 105°C visit Intersil Buy
ISL85402IRZ-T Intersil Corporation 2.5A Regulator with Integrated High-Side MOSFET for Synchronous Buck or Boost Buck Converter; QFN20; Temp Range: -40° to 85°C visit Intersil Buy
ISL85402IRZ-TK Intersil Corporation 2.5A Regulator with Integrated High-Side MOSFET for Synchronous Buck or Boost Buck Converter; QFN20; Temp Range: -40° to 85°C visit Intersil Buy

gate drive for mosfet irfz44

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IRFZ44 pwm pv charge controller circuit diagram

Abstract: motor driver IRFZ44 ): Bottom Gate Drive. The high current drive point for the bottom MOSFET. When a gate resistor is used it , (Pins 13, 19): Bottom Gate Drive. The high current drive point for the bottom MOSFET. When a gate resistor is used it is inserted between the Bottom Gate Drive pin and the gate of the MOSFET. PV + (Pins , DR (Pin 13): Top Gate Drive. The high current drive point for the top MOSFET. When a gate resistor , Gate Drive. The high current drive point for the top MOSFET. When a gate resistor is used it is
Linear Technology
Original

motor driver IRFZ44

Abstract: 12v 10A dc driver motor control mosfet below 2.5V. B GATE DR (Pin 9): Bottom Gate Drive. The high current drive point for the bottom MOSFET , point for the bottom MOSFET. When a gate resistor is used it is inserted between the Bottom Gate Drive , point for the top MOSFET. When a gate resistor is used it is inserted between Pin 13 and the gate of the MOSFET. T GATE DR (Pins 17, 23): Top Gate Drive. The high current drive point for the top MOSFET. When a gate resistor is used it is inserted between the Top Gate Drive pin and the gate of the
Linear Technology
Original

diode SV 0356

Abstract: motor driver IRFZ44 GATE DR (Pin 9): Bottom Gate Drive. The high current drive point for the bottom MOSFET. When a gate , 2.5V. B GATE DR (Pins 13, 19): Bottom Gate Drive. The high current drive point for the bottom MOSFET. When a gate resistor is used it is inserted between Bottom Gate Drive pin and the gate of the MOSFET , . T GATE DR (Pin 13): Top Gate Drive. The high current drive point for the top MOSFET. When a gate , Gate Drive. The high current drive point for the top MOSFET. When a gate resistor is used it is
Linear Technology
Original

motor driver IRFZ44

Abstract: IRFZ44 equivalent current drive point for the top MOSFET. When a gate resistor is used it is inserted between Pin 13 and , Regulator for DC Operation Drives Gate of Top N-Channel MOSFET above Supply 180ns Transition Times Driving 10,000pF Adaptive Nonoverlapping Gate Drives Prevent Shoot-Through Top Drive Maintained at High , for the bottom MOSFET. When a gate resistor is used it is inserted between Pin 9 and the gate of the , MOSFET driver. The floating driver can drive the topside N-channel power MOSFETs operating off a high
Linear Technology
Original

IRFZ44 pwm pv charge controller circuit diagram

Abstract: motor driver IRFZ44 (Pin 9): Bottom Gate Drive. The high current drive point for the bottom MOSFET. When a gate resistor , 2.5V. B GATE DR (Pins 13, 19): Bottom Gate Drive. The high current drive point for the bottom MOSFET , DR (Pins 17, 23): Top Gate Drive. The high current drive point for the top MOSFET. When a gate resistor is used it is inserted between the Top Gate Drive pin and the gate of the MOSFET. BOOST (Pin , to below 2.9V. T GATE DR (Pin 13): Top Gate Drive. The high current drive point for the top
Linear Technology
Original

brushless DC motor 200w

Abstract: drive point for the bottom MOSFET. When a gate resistor is used it is inserted between Pin 9 and the , DR (Pin 13): Top Gate Drive. The high current drive point for the top MOSFET. When a gate resistor , to below 2.5V. B GATE DR (Pins 13, 19): Bottom Gate Drive. The high current drive point for the bottom MOSFET. When a gate resistor is used it is inserted between the Bottom Gate Drive pin and the , discharged to below 2.9V. T GATE DR (Pins 17, 23): Top Gate Drive. The high current drive point for the top
Linear Technology
Original

IRFZ44 parallel

Abstract: 60v 10KHz MOSFET high current drive point for the top MOSFET. When a gate resistor is used it is inserted between Pin , Driver Switches Up to 60V Internal Boost Regulator for DC Operation Drives Gate of Top N-Channel MOSFET , point for the bottom MOSFET. When a gate resistor is used it is inserted between Pin 9 and the gate of , effective half-bridge N-channel power MOSFET driver. The floating driver can drive the topside N-channel , + CBOOST 1µF 1000µF 100V IN TOP IN BOTTOM T GATE DR B GATE DR IRFZ44 L L H H L
Linear Technology
Original
IRFZ44 parallel 60v 10KHz MOSFET motor driver IRFZ44 IRFZ44 pwm pv charge controller circuit diagram 77548 55585-A2 LT1336 LT1158 LT1160 LT1162

12v 10A dc driver motor control mosfet

Abstract: motor driver IRFZ44 drive point for the bottom MOSFET. When a gate resistor is used it is inserted between the Bottom Gate Drive pin and the gate of the MOSFET. PV + (Pins 14, 20): Bottom Driver Supply. Must be connected to , drive point for the top MOSFET. When a gate resistor is used it is inserted between Pin 13 and the gate of the MOSFET. T GATE DR (Pins 17, 23): Top Gate Drive. The high current drive point for the , point for the bottom MOSFET. When a gate resistor is used it is inserted between Pin 9 and the gate of
Linear Technology
Original
12v 10A dc driver motor control mosfet IRFZ44 pwm voltage regulator 48V IRFZ44 equivalent IRFZ44 mosfet gate drive for mosfet irfz44 LT1160/LT1162 1160/LT1162 LT1910 LTC1922-1 LTC1923

RCR-664D-221KC

Abstract: motor driver IRFZ44 regulator is not used. BGATEDR (Pin 9): Bottom Gate Drive. The high current drive point for the bottom , below the undervoltage threshold. TGATEDR (Pin 13): Top Gate Drive. The high current drive point for , Top Driver Switches Up to 60V Internal Boost Regulator for DC Operation Drives Gate of Top N-Channel MOSFET above Supply 180ns Transition Times Driving 10,000pF Adaptive Nonoverlapping Gate Drives , , VTSOURCE = 0V and Pins 1, 16 open. Gate Feedback pins connected to Gate Drive pins unless otherwise
Linear Technology
Original
RCR-664D-221KC 12v 15A dc motor speed controller circuit diagram drive motor 10A with transistor P channel MOSFET LT3526 n channel a type irfz44 mosfet 5558

n channel a type irfz44 mosfet

Abstract: IRFZ44 pwm pv charge controller circuit diagram current drive point for the top MOSFET. When a gate resistor is used it is inserted between Pin 13 and , Regulator for DC Operation 180ns Transition Times Driving 10,000pF Adaptive Nonoverlapping Gate Drives Prevent Shoot-Through Drives Gate of Top N-Channel MOSFET Above Supply Top Drive Maintained at High , boost regulator is not used. BGATEDR (Pin 9): Bottom Gate Drive. The high current drive point for , LT®1336 is a cost effective half-bridge N-channel power MOSFET driver. The floating driver can drive
Linear Technology
Original
1N4148 DIODE 1336 Application irfz44 COMPLEMENT OF IRFZ44 1336 MARKING 1336 diode 1336+diode LT1846 HL-KM147U RCS01 IRFZ34 MBR340

irfz44

Abstract: gate drive for mosfet irfz44 IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , controlled by duty factor "D" · D.U.T. - device under test + VDD Driver gate drive P.W. Period D , diode forward drop Ripple 5 % ISD * VGS = 5 V for logic level devices and 3 V drive devices , dV/dt Rating · 175 °C Operating Temperature · Fast Switching · Ease of Paralleling · Simple Drive , design, low on-resistance and cost-effectiveness. The TO-220 package is universially preferred for
Vishay Siliconix
Original
IRFZ44 data IRFZ44 mosfet switching circuit HFZ44 IRFZ44P HFZ44-E3

gate drive for mosfet irfz44

Abstract: IRFZ44 IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , factor "D" · D.U.T. - device under test RG Driver gate drive P.W. Period D= + - VDD , forward drop Inductor current Ripple 5 % ISD * VGS = 5 V for logic level devices and 3 V drive , 25 · Simple Drive Requirements Qgd (nC) Configuration Single · Lead (Pb)-free Available , -220 package is universially preferred for commercial-industrial applications at power dissipation levels to
Vishay Siliconix
Original
IRFZ44 DATASHEET IRFZ44PBF SiHFZ44-E3

irf510 switch

Abstract: irf840 mosfet drive circuit diagram essential for optimized switch performance. Designing for adequate gate drive, resulting in fast rise and , estimate MOSFET gate drive requirements; calculations based on gate charge (QG) are better at predicting , Drive Circuit If we have one MOSFET with a gate charge of 60nC at a VGS of 10V, switching at 500kHz , changing drain voltage, which steals from the available gate-drive current of the MOSFET drive circuit , to rise. As the voltage on the gate rises, the drain-to-source resistance of the MOSFET falls to
Micrel Semiconductor
Original
MIC4416 irf510 switch irf840 mosfet drive circuit diagram MOSFET IRF740 as switch irf520 switch power MOSFET IRF740 driver circuit IRF510 application note IRF7413 MIC4416/17

1RFZ44

Abstract: IRFZ44 International SS Rectifier PD-9.510C IRFZ44 HEXFET® Power MOSFET â'¢ Dynamic dv/dt Rating â'¢ 175°C Operating Temperature â'¢ Fast Switching â'¢ Ease of Paralleling â'¢ Simple Drive Requirements I D G \ I , on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial , Temperature, for 10 seconds 30011.6mm from case) Mounting Torque, 6-32 or M3 screw ._. 10 Ibf-ln (1.1 N.m , Drain-to-Source On-Resistance â'" â'" 0.028 n VGs=10V, Id=31A © VGS(th) Gate Threshold Voltage 2.0 â'" 4.0 V
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OCR Scan
1RFZ44 12v irfz44 C-25DC irfz44 ge IRFZ44 IOR

IRFZ44

Abstract: IRFZ44 data Breakdown \A)ltage Type IRFZ44 IRFZ45 IRFZ44 IRFZ45 IRFZ44 IRFZ45 VGS(th) flfs Gate Threshold Voltage , ! DÖ7D3 4 IRFZ44, IRFZ45 Devices INTERNATIONAL R E C TIFIE R T-39-13 Qg, TOTAL GATE CHARGE (nC , - Gate Charge Test Circuit C-453 INTERNATIONAL RECTIFIER IRFZ44, IRFZ45 Devices , TEMPERATURE HEXFET TRANSISTORS N-CHANNEL IRFZ44 IRFZ45 60 Volt, 0.028 Ohm HEXFET TO-220AB Plastic , electrical parameters. They are well suited for applications such as switching power supplies, motor controls
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OCR Scan
IRFz44 n-channel MOSFET c4488 diode c448 diode c450 diode c449 554SE 220AB C-447 IRF245 C-451 5S45E

IRFZ44

Abstract: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 , duty factor â'Dâ' D.U.T. - device under test + - VDD Driver gate drive P.W. Period , Paralleling 25 â'¢ Simple Drive Requirements Qgd (nC) Configuration Single â'¢ Compliant to , cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power
Vishay Siliconix
Original
2002/95/EC 2011/65/EU JS709A

irfz44

Abstract: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 , duty factor â'Dâ' D.U.T. - device under test + - VDD Driver gate drive P.W. Period , Paralleling 25 â'¢ Simple Drive Requirements Qgd (nC) Configuration Single â'¢ Compliant to , cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power
Vishay Siliconix
Original

IRFZ44 equivalent

Abstract: H-bridge irlZ44 LTC1155 U OPERATIO Gate Charge Pump Gate drive for the power MOSFET is produced by an adaptive , voltage is limited to 18.6V and the gate drive is immediately removed from the MOSFET to ensure that it , 0.5 Using the Second Channel for Fault Detection 1155 TA09 Bootstrapped Gate Drive for (100Hz , s s s The LTC®1155 dual high side gate driver allows using low cost N-channel FETs for high , power supply rails. Gate Drive Pin The gate drive pin is either driven to ground when the switch is
Linear Technology
Original
74C14 H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 24v rectifier j8 1N4746A IRFZ24 1N4690A 1N5817 F-28115

gate drive for mosfet irfz44

Abstract: IRFZ44 mosfet switching circuit IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 , dV/dt Rating · 175 °C Operating Temperature · Fast Switching · Ease of Paralleling · Simple Drive , preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low , industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb
Vishay Siliconix
Original

IRFZ44 data

Abstract: IRFZ44 MOSFETs IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 , dV/dt Rating · 175 °C Operating Temperature · Fast Switching · Ease of Paralleling · Simple Drive , preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low , industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb
Vishay Siliconix
Original
IRFZ44 MOSFETs voltage regulator mar 920 MOSFET IRFZ44
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