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CC1120DCDCEM868-RD Texas Instruments CC1120 with TPS62730 EM 868 MHz Reference Design visit Texas Instruments

fujitsu DC-DC

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block diagram for fire alarm system

Abstract: block fire alarm system block diagram Fujitsu Microelectronics (Shanghai) Co., Ltd. Application Note MCU-AN- 500054-E-10 2 F MC , information and/or specifications, please contact your Fujitsu sales representative or Fujitsu authorized dealer. 2. Fujitsu will not be liable for infringement of copyright, industrial property right, or other , contents of this manual may not be transferred or copied without the express permission of Fujitsu. 4. The , Fujitsu Microelectronics (Shanghai) Co., Ltd. MCU-AN- 500054-E-10 ­ Page 2 Smoke Detector Demo
Fujitsu
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MB95200 block diagram for fire alarm system block fire alarm system block diagram smoke detector schematic schematic smoke DETECTOR CIRCUIT DIAGRAM MB95F202K Firealarm project

mb86390

Abstract: Firmware 6103 Fujitsu MPEG2 Encoder MB86390A-E/B Development Kit provides a simple and effective means of evaluating the , to Fujitsu's MPEG decoder (MB87L2250 or RAMPEG) board. This enables the user to evaluate the system , Software included Can directly be used to integrate in customer system Easy connection to Fujitsu's MPEG2 , Decoder Board + Cable for Transport Stream MB86390-MPEG-E/B Copyright © 2001 Fujitsu , without notice. Customers are advised to consult with FUJITSU sales representatives before ordering.The
Fujitsu
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MB86390A MB90F591 mb86390 Firmware 6103 MPEG2 encoder fujitsu DC-DC MB863890A FME/MM/DKP/0401 SAA7113H ITU656 PCM1800

m4 Screw Terminal pcb

Abstract: centrifuge Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910052-14 FRLITE FAMILY EVALUATION , .3 general revision V1.4 China-RoHS regulation added This document contains 35 pages. -2- © Fujitsu , permitted by applicable law, Fujitsu Microelectronics Europe GmbH restricts its warranties and its , the maximum extent permitted by applicable law, Fujitsu Microelectronics Europe GmbH disclaims all , . 1. Fujitsu Microelectronics Europe GmbH warrants that the Product will perform substantially in
Fujitsu
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m4 Screw Terminal pcb centrifuge MB91F267 MB91F267N 91F267 MOTORKIT-91F267-MC SJ/T11363-2006

91F267

Abstract: centrifuge Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910052-13 FRLITE FAMILY EVALUATION , This document contains 33 pages. -2- © Fujitsu Microelectronics Europe GmbH MotorKit-91F267-MC User Guide Warranty and Disclaimer To the maximum extent permitted by applicable law, Fujitsu , applicable law, Fujitsu Microelectronics Europe GmbH disclaims all warranties and liabilities for the , and must only be used in an evaluation laboratory environment. 1. Fujitsu Microelectronics
Fujitsu
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laboratory dc power supply THREE PHASE INVERTER PROGRAMMING LOGIC 3 phase current monitor and controller using mc optocouplers CAN64 NQPACK064SB

transistor 2428

Abstract: 2SC 374 FUJITSU MICROELECTRONICS 31E » S 374*i7b2 0Glb51b T HFfll r-33-13 January 1990 - Edition 1.1 PRODUCT PROFILE- FUJITSU 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2428 is a silicon NPN general purpose, high power switching transistor fabricated with Fujitsu's unique , storage Time â'¢its - 0.6 1.2 PS Fall Time tf - 0.15 1.0 W Copyright© 1»» by FUJITSU UMITED wd Fuftau Mcfoötectrcnlc*, inc. Pulsed: Pulse Width £300jis Duty Cycle £ 2% 1-19 FUJITSU
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transistor 2428 2SC 374 R3313 high power switching transistor saia TRANSISTOR 2SC T-33-13

L81A

Abstract: 2SC2428 FUJITSU MICROELECTRONICS 31E D S 37417« 0ülb51b T HFfll r-33-13 January 1990 -^ Edition 1.1 PRODUCT PROFILE- FUJITSU 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2428 Ts a silicon NPN general purpose, high power switching transistor fabricated with Fujitsu's unique Ring Emitter , « storage Time «its - 0.6 1.2 PS Fall Time tf - 0.15 1.0 W CopKiljhl© 1»» by FUJITSU U MIXED Kid , Electronic-Library Service CopyRight 2003 T FUJITSU MICROELECTRONICS 3 IE » O BTMTTLB DOlbSl? 1 ®FMI T-33-13 DC
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L81A

TRANSISTOR 2Sc 2525

Abstract: 2SC2526 FUJITSU MICROELECTRONICS 3IE » Si 37Mm2 D01tS20 1 ÃFMI , ms Fall Time -tf - 0.2 - - 0.2 - /is Copyright© ttto by FUJITSU UUTCD Hid Fu|t,u UctoMctronlca, Inc. â  Pulsed: Pulse Width g 300ji s Duty Cycle < 6% 1-23 FUJITSU MICROELECTRONICS 31E D 37Â
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2SC2525 2SC2526 TRANSISTOR 2Sc 2525 2SC 2625 transistor TRANSISTOR 2sc2526 2sa1075 2625/2SC 2SC2526/2SC2526 2SA1075/2SA1076 RM-60

SON-10 footprint

Abstract: Power One PMP 3.24 FUJITSU MICROELECTRONICS DATA SHEET DS04-27271-1E ASSP for Power Management Applications , Copyright©2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.4 MB39C022 PIN ASSIGNMENT , operating stability of the device when used as a DC/DC converter. Therefore, FUJITSU MICROELECTRONICS , avoid using capacitor with the F-temperature rating ( - 80% to + 20%). FUJITSU MICROELECTRONICS , it turns into short mode when damaged. If you insist on using a tantalum capacitor, FUJITSU
Fujitsu
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MB39C022G SON-10 footprint Power One PMP 3.24 PMP 3.24 EX PMP 3.24 MB39C022G/MB39C022J/MB39C022L MB39C022N MB39C022J MB39C022L SON-10

TRANSISTOR 2SA1076

Abstract: 2SA1075 FUJITSU MICROELECTRONICS ~Ì7 Ï>Ã'~| 374^7^2 â¡â¡â¡lflMG â¡ FUJITSU MICROELECTRONICS 37497ó¿ f-'UjITSU MICROELECTRONICS SILICON PNP RING EMTJLT&K 37C TRANSISTORS 12 AMP, 120 & 160 V¿LT 2SA1075 2SA1076 , Powered by ICininer.com Electronic-Library Service CopyRight. 2003 FUJITSU MICROELECTRONICS BT 37417^2 0001041 1 3749762 FUJITSU MICROELECTRONICS 37C 01841 200 c « O 100 « 50 O o n Ul 20 u. £ 10 , Electronic-Library Service CopyRight. 2003 FUJITSU MICROELECTRONICS 37C » â  374"I7L,2 0001133 b â  " JÃ
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TRANSISTOR 2SA1076 TRANSISTOR 2Sa 1075 transistor 2SA transistor 2SA 374 2SA audio POWER TRANSISTORS transistors 2SA 2SC25251

2SC2522

Abstract: 15D transistor FUJITSU MICROELECTRONICS 31E D B 374=^2 GOlbSlfl 3 SFMI r-22-13 la.r_FUJITSU PRODUCT PROFILE ' 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2SC2522/2SC2522A/2SC2523 ara silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transiter (RET) technology. RET devices are constructed with multiple emitters connected , Fot 2SC2522A only Copyright© IMO by FUfTSU UWTHO ind Fufttu UdMhrtonlca, Inc. 1-21 FUJITSU
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15D transistor R2213 2SC25 10ICI 2sa1073 2SC2522/2SC25 2SA1072/2SA1072A/2SA1073 2SC2S23 2SC2523
Abstract: FUJITSU MICROELECTRONICS DATA SHEET DS04-27229-2Ea ASSP For Power Supply Applications , 30-pin plastic TSSOP (FPT-30P-M04) Copyright©2002-2008 FUJITSU MICROELECTRONICS LIMITED All , ) 2001 FUJITSU LIMITED F30007SC-1-1 Dimensions in mm (inches) 34 MB3889 MEMO 35 FUJITSU , please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue , ://www.fma.fujitsu.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. 151 Lorong Chuan, #05-08 New Tech Park Fujitsu
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DS04-27229-2E

NPN transistor 2527

Abstract: 2SA1077 2SA1077 FUJITSU SILICON HIGH SPEED POWER TRANSISTOR SILICON PNP RING EMITTER TRANSISTOR (RET) The 2SA1077 is silicon PNP general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor (RET) technology. RET devices are constructed with multiple emitters connected through diffused ballast resistors which provide uniform current density. This structure permits the design of high power transistors with exceptional switching characteristics and frequency response
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NPN transistor 2527 tf 011

6SVP150M

Abstract: C1608JB1H104K FUJITSU MICROELECTRONICS DATA SHEET DS04-27229-2Ea ASSP For Power Supply Applications , TSSOP (FPT-30P-M04) Copyright©2002-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved , (.005±.001) 0.90±0.05 (.035±.002) 0.3865(.0152) 2001 FUJITSU LIMITED F30007SC-1-1 Dimensions in mm (inches) 34 MB3889 MEMO 35 FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei , FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A
Fujitsu
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6SVP150M C1608JB1H104K IRF7901D1 RB495D
Abstract: Spansion memory, analog, and microcontroller products and solutions. FUJITSU MICROELECTRONICS DATA , TSSOP (FPT-30P-M04) Copyright©2002-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved , ) 2001 FUJITSU LIMITED F30007SC-1-1 Dimensions in mm (inches) 34 MB3889 MEMO 35 FUJITSU , please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue , ://www.fma.fujitsu.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. 151 Lorong Chuan, #05-08 New Tech Park Spansion
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2SA1072

Abstract: 2SA1073 FUJITSU MICROELECTRONICS 31E D January 1990 Edition 1.1 PRODUCT PROFILE : 374ci7b5 GDlbSOfl â¡ 3FMI T- 33-03 _ Fujfrsu 2SA1072, 2SA1072A, 2SA1Ã73 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 ara silicon PNP general purposa, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transitor (RET) technology. RETdevices are constructed with , . 1-11 Powered by ICminer.com Electronic-Library Service CopyRight 2003 FUJITSU MICROELECTRONICS 31E Â
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VERO dc-dc power 25CC 2SA107 2SC2S22/2SC2522A/2SC2523 13FMI T-33-23

transistor ITT

Abstract: January 1990 Edition 1.1 PRO DUCT P R O FILE FUJITSU 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2428 is a silicon NPN general purpose, high power switching transistor fabricated with Fujitsu's unique Ring Emitter Transistor (R E T ) technology. R E T devices are constructed with multiple emitters connected through diffused ballast resistors which provide uniform current , d : P u lse W id th < 300 ms Copyright© 1MO by FUJITSU LIMITED and Fu Mn j M ctoM cttm la. Inc. D u
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transistor ITT

fujitsu ring emitter 2sc2523

Abstract: 2SC2522 January 1990 Edition 1.1 2SC2522, 2C2522A, 2C2523 DESCRIPTION PRODUCT PROFILE FUJITSU Silicon High Speed Power Transistor The 2SC2522/2SC2522A/2SC2523 are silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transiter (RET) technology. RET devices are constructed with multiple emitters connected through diffused ballast resistors which , % »For 2SC2S22A only Copyright© 1WO by FUJITSU UlfTEP and Fufrwi Wcfo»Uc»anlM. Inc. 2SC2522
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fujitsu ring emitter 2sc2523 c1507

ltsj

Abstract: 2SC2623 FUJITSU MICROELECTRONICS 31E D B 37417b2 DDlbSlfl 3 EIFMI ar_FUJITSU PRODUCT PROFILE â'" * 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2SC2522/2SC2522A/2SC2523 ara silicon NPN generalpurpose, high power switching transistors fabricated with Fujitsu's unique Ring EmitterTransitor (RET) technology. RET devices are constructed with multiple emitters connected through diffused , UctMhctonlca, Inc. 1-21 Powered by ICminer.com Electronic-Library Service CopyRight 2003 FUJITSU
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ltsj 2SC2623 15CF 63FMI

TRANSISTOR 2Sa 1075

Abstract: TRANSISTOR 2Sc 2525 2SA1075 2SA1076 FUJITSU SILICON HIGH SPEED POWER TRANSISTOR SILICON PNP RING EMITTER TRANSISTOR (RET) The 2SA 1075/2SA 1076 are silicon PNP general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor (RET) technology. RET devices are constructed with multiple emitters connected through diffused ballast resistors which provide uniform current density. This structure permits the design of high power transistors with exceptional switching characteristics and
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2SA transistor 2SA POWER TRANSISTORS 2sa tr 2SA PNP TRANSISTOR 1076 2525/2SC

2SC2527

Abstract: a1077 January 1990 Edition 1.1 2SC2527 PRODUCT PROFILE. FUJITSU Silicon High Speed Power Transistor DESCRIPTION The 2SC 2527 is silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor (R E T ) technology. R E T devices are constructed with multiple emitters connected through diffused ballast resistors which provide uniform current , io v . ie = 0 , f = 1 MHz MS MS C opyright® IMO by FUJITSU UMTED an d Fu#tau lf c ro » l
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a1077
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