500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL29102IROZ-T7 Intersil Corporation Low Power Ambient Light-to-Voltage Nonlinear Converter; ODFN6; Temp Range: -40° to 85°C visit Intersil Buy
ISL29102IROZ-T7A Intersil Corporation Low Power Ambient Light-to-Voltage Nonlinear Converter; ODFN6; Temp Range: -40° to 85°C visit Intersil Buy
ISL6146AFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFUZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146DFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy

fet curtice nonlinear model

Catalog Datasheet MFG & Type PDF Document Tags

Curtice

Abstract: fet curtice nonlinear model Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the Statz-Pucel [3], and the TOM (Triquint's Own Model) [4]. The Curtice model was one of the first high frequency nonlinear GaAs FET models to be implemented in commercial simulators , range of biases however, CEL has found that the Curtice model doesn't fit the measured AC and DC
California Eastern Laboratories
Original

C882 TRANSISTOR

Abstract: ATF531P8 third order intercept point (OPI3). The non-linear transistor model for the ATF-531P8 is based on the work of Curtice [1]. The model can be downloaded from Avago's website. An important feature of the non-linear model is the use of a quadratic expression for the drain current versus gate voltage , Microwave circuits, IEEE Press, New York 1997 [3] W. R. Curtice, "A MESFET model for use in the design of , in Figure 1. ATF-531P8 The ATF-531P8 E-pHEMT FET features a combination of industry-leading
Avago Technologies
Original
C882 TRANSISTOR ATF531P8 ATF531P83 Avago Mounted Amplifiers Curtice BCV62B AN-1222 ATF-54143 MTT-28 AN-1281 5988-9546EN

ATF-531P8

Abstract: fet curtice nonlinear model -1dB) and output third order intercept point (OPI3). The non-linear transistor model for the ATF-531P8 is based on the work of Curtice [1]. The model can be downloaded from Agilent's website. An important feature of the non-linear model is the use of a quadratic expression for the drain current versus , , New York 1997 [3] W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits , in Figure 1. ATF-531P8 The ATF-531P8 E-pHEMT FET features a combination of industry-leading
Agilent Technologies
Original
fet curtice nonlinear model High Dynamic Range FET sot-89 DEMO-ATF-5X1P8 BCV62C RG200D

agilent pHEMT transistor

Abstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER third order intercept point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice[3]. Although this model closely predicts the DC and small signal behavior , needed. The model can be downloaded from Agilent's web-site. The results of the non-linear analysis , . Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , Agilent ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications
Agilent Technologies
Original
agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER transistor ajw bjt differential amplifier application circuits ATF-5X143 ATF pHEMT 5988-9555EN

transistor C715

Abstract: ATF531 (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice[3]. , . Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications , . The Avago ATF-531P8 E-pHEMT FET offers performance optimized for the first and second stages of , years at a mounting temperature of +85° C. The ATF-531P8 E-pHEMT FET is housed in the compact 2.0 mm x
Avago Technologies
Original
transistor C715 ATF531 fet curtice mesfet fet 5988-9545EN

L-07C1N8ST

Abstract: fet curtice nonlinear model compression point (P1dB) and output third order intercept point (OIP3). The non-linear transistor model used in the simulation is based on the work of Curtice [2]. Although this model closely predicts the DC , -54143 PHEMT - A.J. Ward 2. W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits , -55143 device operates as a normal FET requiring input and output matching as well as DC biasing. Using , both linear and non-linear modes of operation. Linear Analysis For the linear analysis the
Avago Technologies
Original
L-07C1N8ST atf55143 250R07C8R2FV4T sdars ATF-551M4 AV01-0376EN

transistor ajw

Abstract: ATF55143 compression point ( P-1dB) and output third order intercept point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice[3]. Although this model closely predicts the , circuits, IEEE Press, New York 1997 [3] W. R. Curtice, "A MESFET model for use in the design of GaAs , ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications , nonlinear modes of operation. Linear Analysis For the linear analysis the transistors can be modeled with
Avago Technologies
Original
55143

equivalent transistor C5001

Abstract: C5001 transistor transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely , may be found on: http://www.agilent.com/eesof-eda 4 15 [3] W. R. Curtice, "A MESFET model , Agilent ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications , component heat generation. The Agilent ATF-58143 E-pHEMT FET offers performance optimized for the first , ATF-58143 E-pHEMT FET features 0.5 dB noise figure with +16.5 dB associated gain, combined with
Agilent Technologies
Original
equivalent transistor C5001 C5001 transistor c815 transistor transistor c815 ATF581433 transistor C633 5988-9554EN

agilent pHEMT transistor

Abstract: transistor C715 point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice , . Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , Agilent ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications , component heat generation. The Agilent ATF-531P8 E-pHEMT FET offers performance optimized for the first , FET is housed in the compact 2.0 mm x 2.0 mm x 0.75 mm 8-pad industry-standard leadless plastic
Agilent Technologies
Original
GaAs pHEMT Low Noise 2x2 vhf fet lna

TRANSISTOR C815

Abstract: equivalent transistor C5001 -1dB) and output third order intercept point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice[3]. Although this model closely predicts the DC and small signal , [2] Stephan Maas, Nonlinear icrowave circuits, IEEE M Press , New York 1997 [3] W. R. Curtice, "A , ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900MHz Applications Application Note , generation. The Avago ATF-58143 EpHEMT FET offers performance o ptimized for the first and econd stages
Avago Technologies
Original
AV02-0913EN surface mount transistor c633 SOT-343 AMA A LL1005-FH2N2S transistor C5001 900MH ATF54143 5989-9554EN

circuit diagram of hearing aid using transistors

Abstract: ATF54143.s2p performance. 6221-06 AN 1281 5 0 -5 -10 Non-linear Analysis The non-linear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Avago Technologies' web-site. An important feature of the non-linear model is the use of a quadratic expression for , 3.0 Table 3. Simulated non-linear performance Bias Conditions per FET P-1dB Third Order , Press, New York 1997. [3] W. R. Curtice, "A MESFET Model for Use in the Design of GaAs Integrated
Avago Technologies
Original
AN1222 circuit diagram of hearing aid using transistors ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter circuit diagram of digital hearing aid 5988-5688EN

ATF-54143 application notes

Abstract: ATF54143.s2p , Nonlinear Microwave circuits, IEEE Press, New York 1997. [3] W. R. Curtice, "A MESFET Model for Use in , intercept point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Agilent's web-site. An important feature of the non-linear model is the use of 7 20 15 GAIN (dB) 10 5 0 -5 -10 -15 0.5 1.0 1.5 2.0 , PIN or FET devices. The LNA described in this paper is for use in applications covering 1.7 GHz
Agilent Technologies
Original
circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design circuit diagram of low cost hearing aid agilent ads combiner Tower Mounted Amplifier

TDMA simulation ADS

Abstract: ATF-50189 non-linear modes of operation. was used for simulation of 1 dB compression point (P1dB) and output third order intercept point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Avago Technologies web site. Linear Analysis , -50189 device operates as a normal FET requiring input and output matching as well as DC biasing. Unlike a , , shown in figure 12, show the stability factor, K>1. Non-linear Analysis For the non-linear analysis
Avago Technologies
Original
ATF-50189 ATF050189 TDMA simulation ADS BTS 3900 a msu 305 ATF0189 800MH 2400MH AV01-0365EN

JD 1803

Abstract: philips diode PH 33D device modeling are described in detail. Nonlinear, linear, and noise models for MESFETs and Schottky , 54 3.2 Principle of Operation 55 3.3 Ion-Implanted MESFET Model 56 3.4 Intrinsic I-V Model 58 3.5 , 4.2.2 Diode Model 99 4.2.3 Diode Characterization and Modeling 102 4.2.3.1 DC I-V Measurement 102 , Blocks 127 Donald Estreich 5.1 Introduction 127 5.2 Biasing Circuits 128 5.2.1 Biasing a Single FET 131 5.2.2 Biasing Multiple FET Configurations 132 5.2.3 Temperature and Backgating Effects in
-
OCR Scan
JD 1803 philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC

HP RF TRANSISTOR GUIDE

Abstract: MRF286 , Daren Bridges, Tao Liang, Eric Shumate and W. R. Curtice, "A New Dynamic Electro­Thermal Nonlinear Model , : http://www.motorola.com/semiconductors/rf/models/ The Motorola Electro Thermal (MET) model for RF LDMOS transistors is a nonlinear model that for the first time examines both electrical and thermal , tailored to model high power RF LDMOS transistors used in base station, HDTV digital broadcast, and land , .3) harmonic balance simulator, the MET LDMOS model is capable of performing small­signal, large­signal
Motorola
Original
HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 High frequency MRF transistor motorola MRF SG384/D