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fet curtice nonlinear model
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CurticeAbstract: fet curtice nonlinear model Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the StatzPucel [3], and the TOM (Triquint's Own Model) [4]. The Curtice model was one of the first high frequency nonlinear GaAs FET models to be implemented in commercial simulators , range of biases however, CEL has found that the Curtice model doesn't fit the measured AC and DC 
California Eastern Laboratories Original 


C882 TRANSISTORAbstract: ATF531P8 third order intercept point (OPI3). The nonlinear transistor model for the ATF531P8 is based on the work of Curtice [1]. The model can be downloaded from Avago's website. An important feature of the nonlinear model is the use of a quadratic expression for the drain current versus gate voltage , Microwave circuits, IEEE Press, New York 1997 [3] W. R. Curtice, "A MESFET model for use in the design of , in Figure 1. ATF531P8 The ATF531P8 EpHEMT FET features a combination of industryleading 
Avago Technologies Original 

C882 TRANSISTOR ATF531P8 ATF531P83 Avago Mounted Amplifiers Curtice BCV62B AN1222 ATF54143 MTT28 AN1281 59889546EN 
ATF531P8Abstract: fet curtice nonlinear model 1dB) and output third order intercept point (OPI3). The nonlinear transistor model for the ATF531P8 is based on the work of Curtice [1]. The model can be downloaded from Agilent's website. An important feature of the nonlinear model is the use of a quadratic expression for the drain current versus , , New York 1997 [3] W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits , in Figure 1. ATF531P8 The ATF531P8 EpHEMT FET features a combination of industryleading 
Agilent Technologies Original 

fet curtice nonlinear model High Dynamic Range FET sot89 DEMOATF5X1P8 BCV62C RG200D 
agilent pHEMT transistorAbstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER third order intercept point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice[3]. Although this model closely predicts the DC and small signal behavior , needed. The model can be downloaded from Agilent's website. The results of the nonlinear analysis , . Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , Agilent ATF55143 EpHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications 
Agilent Technologies Original 

agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER transistor ajw bjt differential amplifier application circuits ATF5X143 ATF pHEMT 59889555EN 
transistor C715Abstract: ATF531 (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice[3]. , . Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , ATF531P8 EpHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications , . The Avago ATF531P8 EpHEMT FET offers performance optimized for the first and second stages of , years at a mounting temperature of +85° C. The ATF531P8 EpHEMT FET is housed in the compact 2.0 mm x 
Avago Technologies Original 

transistor C715 ATF531 fet curtice mesfet fet 59889545EN 
L07C1N8STAbstract: fet curtice nonlinear model compression point (P1dB) and output third order intercept point (OIP3). The nonlinear transistor model used in the simulation is based on the work of Curtice [2]. Although this model closely predicts the DC , 54143 PHEMT  A.J. Ward 2. W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits , 55143 device operates as a normal FET requiring input and output matching as well as DC biasing. Using , both linear and nonlinear modes of operation. Linear Analysis For the linear analysis the 
Avago Technologies Original 

L07C1N8ST atf55143 250R07C8R2FV4T sdars ATF551M4 AV010376EN 
transistor ajwAbstract: ATF55143 compression point ( P1dB) and output third order intercept point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice[3]. Although this model closely predicts the , circuits, IEEE Press, New York 1997 [3] W. R. Curtice, "A MESFET model for use in the design of GaAs , ATF55143 EpHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications , nonlinear modes of operation. Linear Analysis For the linear analysis the transistors can be modeled with 
Avago Technologies Original 

55143 
equivalent transistor C5001Abstract: C5001 transistor transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely , may be found on: http://www.agilent.com/eesofeda 4 15 [3] W. R. Curtice, "A MESFET model , Agilent ATF58143 EpHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications , component heat generation. The Agilent ATF58143 EpHEMT FET offers performance optimized for the first , ATF58143 EpHEMT FET features 0.5 dB noise figure with +16.5 dB associated gain, combined with 
Agilent Technologies Original 

equivalent transistor C5001 C5001 transistor c815 transistor transistor c815 ATF581433 transistor C633 59889554EN 
agilent pHEMT transistorAbstract: transistor C715 point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice , . Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , Agilent ATF531P8 EpHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications , component heat generation. The Agilent ATF531P8 EpHEMT FET offers performance optimized for the first , FET is housed in the compact 2.0 mm x 2.0 mm x 0.75 mm 8pad industrystandard leadless plastic 
Agilent Technologies Original 

GaAs pHEMT Low Noise 2x2 vhf fet lna 
TRANSISTOR C815Abstract: equivalent transistor C5001 1dB) and output third order intercept point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice[3]. Although this model closely predicts the DC and small signal , [2] Stephan Maas, Nonlinear icrowave circuits, IEEE M Press , New York 1997 [3] W. R. Curtice, "A , ATF58143 EpHEMT GaAs FET Low Noise Amplifier Design for 900MHz Applications Application Note , generation. The Avago ATF58143 EpHEMT FET offers performance o ptimized for the first and econd stages 
Avago Technologies Original 

AV020913EN surface mount transistor c633 SOT343 AMA A LL1005FH2N2S transistor C5001 900MH ATF54143 59899554EN 
circuit diagram of hearing aid using transistorsAbstract: ATF54143.s2p performance. 622106 AN 1281 5 0 5 10 Nonlinear Analysis The nonlinear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Avago Technologies' website. An important feature of the nonlinear model is the use of a quadratic expression for , 3.0 Table 3. Simulated nonlinear performance Bias Conditions per FET P1dB Third Order , Press, New York 1997. [3] W. R. Curtice, "A MESFET Model for Use in the Design of GaAs Integrated 
Avago Technologies Original 

AN1222 circuit diagram of hearing aid using transistors ATF54143.s2p low cost hearing aid circuit diagram ATF54143 application notes stripline power combiner splitter circuit diagram of digital hearing aid 59885688EN 
ATF54143 application notesAbstract: ATF54143.s2p , Nonlinear Microwave circuits, IEEE Press, New York 1997. [3] W. R. Curtice, "A MESFET Model for Use in , intercept point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Agilent's website. An important feature of the nonlinear model is the use of 7 20 15 GAIN (dB) 10 5 0 5 10 15 0.5 1.0 1.5 2.0 , PIN or FET devices. The LNA described in this paper is for use in applications covering 1.7 GHz 
Agilent Technologies Original 

circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design circuit diagram of low cost hearing aid agilent ads combiner Tower Mounted Amplifier 
TDMA simulation ADSAbstract: ATF50189 nonlinear modes of operation. was used for simulation of 1 dB compression point (P1dB) and output third order intercept point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Avago Technologies web site. Linear Analysis , 50189 device operates as a normal FET requiring input and output matching as well as DC biasing. Unlike a , , shown in figure 12, show the stability factor, K>1. Nonlinear Analysis For the nonlinear analysis 
Avago Technologies Original 

ATF50189 ATF050189 TDMA simulation ADS BTS 3900 a msu 305 ATF0189 800MH 2400MH AV010365EN 
JD 1803Abstract: philips diode PH 33D device modeling are described in detail. Nonlinear, linear, and noise models for MESFETs and Schottky , 54 3.2 Principle of Operation 55 3.3 IonImplanted MESFET Model 56 3.4 Intrinsic IV Model 58 3.5 , 4.2.2 Diode Model 99 4.2.3 Diode Characterization and Modeling 102 4.2.3.1 DC IV Measurement 102 , Blocks 127 Donald Estreich 5.1 Introduction 127 5.2 Biasing Circuits 128 5.2.1 Biasing a Single FET 131 5.2.2 Biasing Multiple FET Configurations 132 5.2.3 Temperature and Backgating Effects in 
 OCR Scan 

JD 1803 philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC 
HP RF TRANSISTOR GUIDEAbstract: MRF286 , Daren Bridges, Tao Liang, Eric Shumate and W. R. Curtice, "A New Dynamic ElectroThermal Nonlinear Model , : http://www.motorola.com/semiconductors/rf/models/ The Motorola Electro Thermal (MET) model for RF LDMOS transistors is a nonlinear model that for the first time examines both electrical and thermal , tailored to model high power RF LDMOS transistors used in base station, HDTV digital broadcast, and land , .3) harmonic balance simulator, the MET LDMOS model is capable of performing smallsignal, largesignal 
Motorola Original 

HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 High frequency MRF transistor motorola MRF SG384/D 